Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications (abstract)

High Temperature Devices for Aerospace Applications (abstract)

2D materials integration on silicon carbide: a root beyond power electronics (abstract)

How SiC brings an added value to MEMS devices ? (abstract)

Novel photonic applications of SiC (abstract)

Silicon Carbide Biotechnology There is more to SiC than power electronics! (abstract)

Technology and Business Development of SiC MOSFET: Retrospect and Prospect (abstract)

Accelerating SiC Mass Commercialization

Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors

500°C Operation of 4H-SiC SRAM

Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Normally-off 1200V Silicon Carbide JFET Diode with Low VF

Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion

3-dimensional observation of dislocations in 4H-SiC using focused light birefringence

Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM

Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method

The golden age of SiC: Turning the potential of SiC into opportunities for energy conversion applications (abstract)

SmartSiC™: a greener, faster and better technology for SiC (abstract)

SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster)

Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface

Quality improvement of SiC substrate surface with using non-abrasive CMP slurry

Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC

Effect of the Source Composition on PVT SiC in Graphite and TaC Coated Crucibles

Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method

Design optimization of insulating materials for 4H-SiC crystal Ingot growth

Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal

Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC

Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD

Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design

A Meister solution for optimized grinding of laser split silicon carbide surfaces (abstract)

Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing (abstract)

HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution (abstract)

Comparative optical metrologies of implanted SiC wafers

Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers

High-temperature α-spectroscopy with 4H-SiC based sensors

Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films

Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster)

Carrier transport mechanism of NiAl contacts on n-type 4H-SiC

Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures

Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD

Development of silicide formation process on p-type SiC by laser annealing

Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC

Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs

Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC

Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC

The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC

Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping

Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC

Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface

Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC

Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications

Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET

Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching

First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure

SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control

Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)

Threshold voltage variation of SiC trench MOSFETs during TDDB stress

Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses

Influence of material properties on ruggedness evaluation of package architectures for SiC power devices

Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination

Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode

Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters

Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives

Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling

Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress

Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress

Power cycling of SiC MOSFETs packaged in different module’s solutions

Analysis of TID effects through gamma-ray irradiation experiments

Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

Density control of single-photon sources formed at a SiO2/SiC interface (invited poster)

SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors

Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods

A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs

A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)

Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding

Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics

Stress fields distribution and simulation in 3C-SiC resonators.

Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics

Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation

A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism

Frequency investigation of SiC MOSFETs C-V curves with biased Drain

Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications

Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact

Accuracy of Split C-V Characterization of SiC Power MOSFETs

Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer

High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET

Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC

Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices

A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate

Driving Clean Energy Adoption and Sustainability: The Pivotal Role of Silicon Carbide Power Electronics Technology (abstract)

LPE + ASM – Combination powers SiC growth (abstract)

SiC epi fabrication – 150 & 200 mm G10-SiC epitaxy platform

Trace element analysis of purified graphite material (abstract)

4H-SiC substrates using the Fast Sublimation Growth Process (abstract)

Screen UV Laser Anneal Technology for next generation of SiC Devices (abstract)

INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET (abstract)

Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics

WBG Semiconductor Industry Status and Prospects

In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy (HR-SPS)

Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization

SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level

How to improve power device / module development efficiency (abstract)

Advanced Carbon film for high-voltage power, high-performance SiC devices

650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2

Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers (abstract)

Centrotherm High Temperature Annealing and Oxidation Furnaces (abstract)

Rapid industrialization of SiC trench technologies (abstract)

Atomic Diffusion Bonding using nitride films and oxide films (abstract)

High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers (abstract)

Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership (abstract)

Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices (abstract)

How process scaling offers maximum flexibility of SiC wafering along the complete process chain

Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors

Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material

Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma

New Generation SiC MPS Diodes with Low Schottky Barrier Height

Total SiC Polishing Process Optimization for Cost of Ownership

Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad

Enabling Next Generation WBG Semiconductors Using CVD Technology

Testing challenges for latest SiC devices (abstract)

Answers to SiC wafer and device production challenges (abstract)

SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping (abstract)

Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming

Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper) (abstract)

Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs

Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices

Thermal oxidation of 4H-SiC(0001) surface in a pure CO2 ambient

Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation

The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)

Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations

Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates

Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography

Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects

High-mobility SiC p-channel MOSFETs on nonpolar faces

Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface

SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure

Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition

Vanadium in SiC: the spin for telecom quantum networks (invited paper) (abstract)

Silicon carbide as a host of color centers emitting at telecom bands

Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing

Carbon cluster emitters in silicon carbide

Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper) (abstract)

1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On

Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC

Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance

Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs

The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper)

Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth

Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules

Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method

Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD

Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields

Optical ionization of qubits and their silent charge states

Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing

Spin-orbit coupling of color centers for quantum applications

Plasmonic Ag nanoparticles on 4H-SiC for sensing application

Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC

Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range

Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition

Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors

Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies

Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface

High-quality SiC crystal growth by temperature gradient control at initial growth stage

The role of air-pocket in crucible structure for high quality SiC crystal growth

Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.

Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy

4H-SiC crystal growth using recycled SiC powder source

Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide

Resistivity as a witness of local crystal growth conditions (abstract)

Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate.

Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry

Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices

Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries

A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes

The Rise of 2D SiC Semiconductors

Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment

Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films

Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput. (abstract)

Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer

Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure

The first optimisation of a 16 kV 4H-SiC N-type IGCT

Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs

Dynamic Bias-Temperature Instability Testing in SiC MOSFETs

Gate Ringing and Dynamic Capacitance of SiC MOSFETs

Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications

Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer

Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET

Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation

Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs

Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator

Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs

Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances

Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon

Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs

Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide

Combustion synthesis of SiC towards preparation of quantum sensors

Determination of SiC MOS interface roughness from TEM image by using machine learning

Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line

Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy

Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface

Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth

Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects

Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering

Dual configuration of shallow acceptor levels in 4H-SiC

Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center

Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates

High-temperature reorganization behavior of porous 4H-SiC thin foils

Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates

Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm

Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces

DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation

Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper)

Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs

The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions

Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer

High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)

Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates.

Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers

The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices

Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties

Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing

Formation of Ti ohmic contact on p-SiC by laser annealing

Nickel ohmic contacts formed on 4H-SiC by UV laser annealing

Proposal of damage-free SiC wafer dicing using water jet guided laser

Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper)

Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs

Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements

Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates

Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper)

Processing and electrical characterization of SiC-on-Insulator structures

High-energy ion channeling for deep implantation of Al into 4H-SiC

Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing

Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method

Silicon carbide based optical frequency comb (invited paper) (abstract)

Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide

Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC

Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions

Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit

Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors

Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography

Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses

High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module

Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs

Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests

A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter

Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs

Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs

Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board

Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs

250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.

Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines

Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations

Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors

Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes

Understanding the Material Loss in the Laser Based SiC Wafer

Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones

SmartSiCTM Substrates: A Boon to Drain Metallization Process

Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD

Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method

Effects of Solution Properties on Growth Conditions of SiC Solution Growth

GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT

Physical Vapor Deposition of a-SiC thin films for optical applications

3C-SiC on Si substrates through transformation of Si and C multilayers

A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC

Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C

Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®

Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC

A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET

Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC

Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks

Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing

Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization

Reduction of the SiC trench sidewalls striations.

Carbon control method in SIC MOSFET with Chlorine and Vth stability

Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films

Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications

Free-standing 3C-SiC p-type doping by Al ion implantation

High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model

Transient-enhanced diffusion of implanted aluminum in 4H-SiC

Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide

High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation

A SiO2/SiC interface formed by direct bonding of SiO2 and SiC

Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems

TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses

Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride

Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes

Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals

Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs

Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers

Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging

Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD

Charge carrier capture from prominent defect centers in 4H-SiC

Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers

Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography

Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer

Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC

Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations

On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC

Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques

In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS)

Monitoring of graphene properties in the process of viral biosensor manufacturing

Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers

Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)

Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices

High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC)

Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability

Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition

Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper)

Characterisation of Silicon Carbide surfaces prepared by PPDE

Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach

Hydrogen etching process of 4H-SiC (0001) in limited regions

Characterization of very thin 3C-SiC epilayers on Si

Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs

On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs

UIS ruggedness of parallel 4H-SiC MOSFETs

Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications

Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes

Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena

Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC

Stacking faults and space charge limited current in 4H-SiC Schottky diodes

Non-Destructive Characterization of Buried Damage in SiC Substrates". No mater how good bulk SiC substrates and epi processes are, proper polishing/CMP and characterization of the surface and subsurface damage are critical for device yield and reliability (invited paper) (abstract)

Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation

Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field

Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations (invited paper) (abstract)

Unique Failure Mode of SiC MOSFETs under Accelerated HTRB

3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation

Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors

OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC

Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution

Photoluminescence polarization of single TS centers in 4H-SiC

Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties

Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET

Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness

Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode

Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope

Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC

Comparison of Si CMOS and SiC CMOS Operational Amplifiers

Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment.

Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs

Amorphous silicon-carbide modulator based on the thermo-optic effect

Modeling the charging of gate oxide under high electric field

Implicit differentiable models for wide temperature range SiC Schottky diode characterization

AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs

Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology

Unclamped inductive switching response of SiC MOSFETs under extreme slow transient

Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes

500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs

Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager

Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures

Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures

Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure

Impact of Al ion implantation on 4H-SiC epitaxial layer

Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts

Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC

Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques

Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping

High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser

A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer

Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C

Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs

Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC

A comparison between different post grinding processes on 4H-SiC wafers

Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy

A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers

Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS

Ga2O3/SiC Heterostructure Schottky Diodes

Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices

Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates

Investigation of dislocation behaviors in 4H-SiC under thermal treatment

DFT modeling of crystallographic defects in SiC polytypes

Characterization of Growth Sectors in Gallium Nitride Substrate Wafers

Systematic tracking of defects from substrate to final device by full wafer mapping techniques

Dependence of the silicon carbide radiation resistance on the irradiation temperature.

Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.

Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates

An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices

Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.

Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs

The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors

Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)

SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations

SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate

Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs

Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs

Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)

Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures

Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy

Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy

Atom probe tomography characterization of SiO2/4H-SiC interface

Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs

High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2

Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements

Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation

Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC

Novel Graphene and SiC Epitaxy to Enable Film Transfer

Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices

Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications

Next step in SiC technology (abstract)