ICSCRM 2023: INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIAL 2023

A
Abd Sani, Mohamad Sazrin	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
Abe, Hiroshi	Silicon carbide as a host of color centers emitting at telecom bands Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
Abe, Kozo	Proposal of damage-free SiC wafer dicing using water jet guided laser
Abe, Maho	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Abrikosov, Igor	Silicon carbide as a host of color centers emitting at telecom bands Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Afridi, Adnan Ali	Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Agarwal, Aditi	New Generation SiC MPS Diodes with Low Schottky Barrier Height 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Agarwal, Anant	Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress
Agnello, Simonpietro	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
Aichinger, Thomas	Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
Akahori, Seishi	Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Akashi, Ryosuke	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Akiba, Atsuhiro	Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)
Alaluss, Mohamed	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes
Alassaad, Kassem	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Alberti, Alessandra	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Albrecht, Kevin	Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques
Alessandrino, Mario S.	Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses
Alety, Sridevi	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Alexander, Andrew	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Alfieri, Giovanni	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Allerstam, Fredrik	Normally-off 1200V Silicon Carbide JFET Diode with Low VF
Allerstam, Fredrik	Unique Failure Mode of SiC MOSFETs under Accelerated HTRB Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
Allibert, Frédéric	SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Almeida, Carlos	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Alonso-Ramos, Carlos	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Alquier, Daniel	Nickel ohmic contacts formed on 4H-SiC by UV laser annealing How SiC brings an added value to MEMS devices ?
Alsmeier, Jan	Rapid industrialization of SiC trench technologies
Alyabyeva, Natalia	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
Amalbert, Vincent	Processing and electrical characterization of SiC-on-Insulator structures
Amalbert, Vincent	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Amato, Antonino	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Ameen, Mike	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Ammann, Pascal	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation
Ammann, Pascal	The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
An, Daeeun	Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET Carbon control method in SIC MOSFET with Chlorine and Vth stability
An, Daeeun	The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)
Andarawis, Emad	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
Ando, Takashi	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Andrieux, Jérôme	Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD
André, Agathe	Processing and electrical characterization of SiC-on-Insulator structures
Angora, Stefano	Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography
Anton Hillary Ratnaraj, Sonia	SmartSiCTM Substrates: A Boon to Drain Metallization Process
Antonini, Giulio	Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs
Antoniou, Marina	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs The first optimisation of a 16 kV 4H-SiC N-type IGCT An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Antoniou, Marina	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Anzalone, Ruggero	Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates. Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy
Arai, Takamasa	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation How to improve power device / module development efficiency
Arango, Yulieth	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Arimura, Shunsuke	Proposal of damage-free SiC wafer dicing using water jet guided laser
Arnold, Niamh	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Arshad, Muhammad	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Asada, Satoshi	Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes
Asano, Shunsuke	Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
Ashik, Emran	High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2
Ashraf, Huma	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Astakhov, Georgy V.	Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
Astner, Thomas	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Atzeri, Marco	UIS ruggedness of parallel 4H-SiC MOSFETs
Auvray, Laurent	Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD
Avramenko, Marina	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Awschalom, David D.	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Ayala, Heaklig	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Ayari, Taha	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
B
Badala, Paolo	Formation of Ti ohmic contact on p-SiC by laser annealing Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Bae, Si-Young	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Bahng, Wook	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Baier, Leander	Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
Baierhofer, Daniel	High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)
Bakowski, Mietek	Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Balkas, Elif	Driving Clean Energy Adoption and Sustainability: The Pivotal Role of Silicon Carbide Power Electronics Technology
Balogh, Laszlo	Comparative optical metrologies of implanted SiC wafers
Bano, Edwige	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
Barbet, Sophie	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Barge, Thierry	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Baringhaus, Jens	Modeling the charging of gate oxide under high electric field
Basa, Peter	Comparative optical metrologies of implanted SiC wafers
Basler, Thomas	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Bathen, Marianne E	Dual configuration of shallow acceptor levels in 4H-SiC Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
Bathen, Marianne Etzelmüller	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Bathurst, Lara	Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
Battista, Massimo	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Bauer, Anton J.	Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC
Baumann, David	Power cycling of SiC MOSFETs packaged in different module’s solutions
Bayliss, Sam. L.	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Bazizi, El Mehdi	Advanced Carbon film for high-voltage power, high-performance SiC devices
Beck, Xavier	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
Becker, Tom	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Beke, Dávid	Combustion synthesis of SiC towards preparation of quantum sensors
Bekker, Christiaan	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Belanche, Manu	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy High-energy ion channeling for deep implantation of Al into 4H-SiC Dual configuration of shallow acceptor levels in 4H-SiC DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
Bell, Martin	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
Bellocchi, Gabriele	Formation of Ti ohmic contact on p-SiC by laser annealing Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Belsito, Luca	Stress fields distribution and simulation in 3C-SiC resonators. Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon
Benamra, Yamina	Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD
Bentivegna, Nella	Unclamped inductive switching response of SiC MOSFETs under extreme slow transient
Bera, Lakshmi Kanta	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC SmartSiCTM Substrates: A Boon to Drain Metallization Process
Bera, Lakshmi Kanta	Atom probe tomography characterization of SiO2/4H-SiC interface Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
Bercu, Nicolas	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
Berger, Clément	Nickel ohmic contacts formed on 4H-SiC by UV laser annealing
Bergman, Peder	Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers
Berthomé, Gregory	Physical Vapor Deposition of a-SiC thin films for optical applications
Bertoni, Mariana	Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
Bethoux, Jean-Marc	Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface
Betsuyaku, Kiyoshi	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
Beuer, Susanne	Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD
Bevilacqua, Pascal	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Beydoun, Nour	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Beyer, Franziska	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Bianda, Enea	Power cycling of SiC MOSFETs packaged in different module’s solutions Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
Biard, Hugo	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Bidini, Camilla	Free-standing 3C-SiC p-type doping by Al ion implantation
Bielejec, Edward	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Bierhoff, Christian	High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)
Bing, Dong	High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser
Birkoben, Tom	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Biro, Szilvia	Comparative optical metrologies of implanted SiC wafers
Birri, Mario	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Biscarrat, Jérôme	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface
Biswas, Ayan	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs
Black, Taylor	Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
Blakesley, James	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Bobela, David	Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD
Boccarossa, Marco	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Bockstedte, Michel	Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures Spin-orbit coupling of color centers for quantum applications Optical ionization of qubits and their silent charge states
Boettcher, Norman	Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology
Bogiages, William	Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices
Bolat, Sami	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Boldrini, Virginia	Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems Free-standing 3C-SiC p-type doping by Al ion implantation
Boldyrjew-Mast, Roman	Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Bollina, Ravi	Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
Bolton, Chris	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Bonamoni, Simone	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules
Bonato, Cristian	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Bongiorno, Corrado	Impact of Al ion implantation on 4H-SiC epitaxial layer TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Boninelli, Simona	Hydrogen etching process of 4H-SiC (0001) in limited regions Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Boninelli, Simona	Impact of Al ion implantation on 4H-SiC epitaxial layer
Borghese, Alessandro	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Boscaglia, Massimo	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Bourennane, Abdelhakim	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Bourrier, David	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Boussey, Jumana	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
Brancato, Antonio	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
Breglio, Giovanni	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Frequency investigation of SiC MOSFETs C-V curves with biased Drain Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Brezeanu, Gheorghe	Implicit differentiable models for wide temperature range SiC Schottky diode characterization Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films
Briccetti, Hunter	Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals
Briggs, Benjamin	Advanced Carbon film for high-voltage power, high-performance SiC devices
Britz, David	Advanced Carbon film for high-voltage power, high-performance SiC devices
Brosselard, Pierre	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Brueckner, Kevin	Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask
Bunk, Oliver	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Burk, Albert	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
Burkard, Guido	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Burkart, Ralph	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Burresi, Emiliano	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
Bussel, Marc	Characterization of very thin 3C-SiC epilayers on Si
Bytheway, Richard	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
Béal, Jérémie	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
Böhm, Christoph	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes
C
Cafra, Brunella	A comparison between different post grinding processes on 4H-SiC wafers
Cakmak, Huseyin	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) SmartSiCTM Substrates: A Boon to Drain Metallization Process
Calabretta, Cristiano	Impact of Al ion implantation on 4H-SiC epitaxial layer GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
Calcagno, Lucia	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations 250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances. Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Calcagno, Lucia	Hydrogen etching process of 4H-SiC (0001) in limited regions
Callejo Munoz, David	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules
Camalleri, Marco	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Camarda, Massimo	Hydrogen etching process of 4H-SiC (0001) in limited regions High-temperature α-spectroscopy with 4H-SiC based sensors Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Canino, Marica	Free-standing 3C-SiC p-type doping by Al ion implantation
Cannas, Marco	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
Cannizzaro, Annalisa	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Cano, Jean Francois	Unique Failure Mode of SiC MOSFETs under Accelerated HTRB Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Cantaro, Valentina	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
Cao, Qinze	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability The first optimisation of a 16 kV 4H-SiC N-type IGCT An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Cao, Qinze	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Capaccioli, Simone	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Carbone, Beatrice	Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster)
Caridroit, Simon	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Carlson, Charles	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
Carole, Davy	Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C
Carria, Egidio	Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
Carter, Samuel	Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Carulla, Maria	High-temperature α-spectroscopy with 4H-SiC based sensors
Casati, Nicola	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Cascino, Salvatore	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition
Cascio, Alessandra	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods
Castorina, Maurizio	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices
Castro, Fernando	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Cauwet, François	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD
Cavallaro, Daniela Grazia	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods
Cela, Enrica	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Celano, Emanuela	Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Cemmi, Alessia	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
Chabi, Sakineh	The Rise of 2D SiC Semiconductors
Chagneux, Valentine	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Chakrabarti, Utpal	Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
Chan, Yi-Ching	Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding
Chand, Umesh	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) Atom probe tomography characterization of SiO2/4H-SiC interface Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures SmartSiCTM Substrates: A Boon to Drain Metallization Process
Chang, Chih-Jung	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances
Chang, Ting-Chang	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Chang, Ting-Fu	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
Chapelle, Audrey	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Charles, William	Advanced Carbon film for high-voltage power, high-performance SiC devices
Charns, Leslie	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Charnvanichborikarn, Supakit	Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices
Chau, Tony	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Chaussende, Didier	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper) Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C Physical Vapor Deposition of a-SiC thin films for optical applications Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications
Chaussende, Didier	Amorphous silicon-carbide modulator based on the thermo-optic effect
Chauveau, Hyon Ju	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
Chebi, Robert	Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
Chehadi, Zeinab	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Chen, Bo	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
Chen, Chun-Ju	Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances
Chen, Hua-Mao	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Chen, Jr-Tai	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Chen, Junhong	Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment
Chen, Liangyu	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
Chen, Zeyu	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Characterization of Growth Sectors in Gallium Nitride Substrate Wafers Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Chen, Zhixian	High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC)
Cheng, Qianyu	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Cheung, Rebecca	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Chi, Xilun	Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs
Chichignoud, Guy	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers
Chiu, Poshun	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
Cho, Kevin Kyuheon	Normally-off 1200V Silicon Carbide JFET Diode with Low VF
Cho, Seong-Ho	Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Cho, Yasuo	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Cho, Young-Hun	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Chodura, Alfred	Trace element analysis of purified graphite material
Choi, Bo-Hyeok	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Choi, Bo-Hyeok	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Choi, Chul	Carbon control method in SIC MOSFET with Chlorine and Vth stability
Choi, Doojin	1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
Choi, Jake	Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
Choi, Ji-Soo	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Choi, Jung Woo	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
Choi, Jung-Woo	Design optimization of insulating materials for 4H-SiC crystal Ingot growth The role of air-pocket in crucible structure for high quality SiC crystal growth
Choi, Jung-Woo	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Choi, Jung-Woo	4H-SiC crystal growth using recycled SiC powder source
Choi, Junyoung	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Chow, T. Paul	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
Chua, Calvin Hung Ming	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
Chudzik, Michael	Advanced Carbon film for high-voltage power, high-performance SiC devices
Chung, Gil	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Resistivity as a witness of local crystal growth conditions
Chung, Seung-Hwan	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Chung, Surasit	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures SmartSiCTM Substrates: A Boon to Drain Metallization Process
Cilibrizzi, Pasquale	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Cilibrizzi, Pasquale	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Ciuk, Tymoteusz	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
Clark, David	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
Clausen, Thomas	In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS) In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy (HR-SPS)
Clausner, Sven	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
Coche, Mael	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Cochrane, Corey	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
Coeurdray, Laetitia	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Coindeau, Stéphane	Physical Vapor Deposition of a-SiC thin films for optical applications
Colston, Gerard	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry
Compagnini, Giuseppe	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
Cooper, James A.	Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper)
Coq Germanicus, Rosine	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs
Corbin, Lucie	Processing and electrical characterization of SiC-on-Insulator structures
Cordiano, Francesco	TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses
Cordier, Yvon	Characterization of very thin 3C-SiC epilayers on Si
Cornigli, Davide	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements
Corre, Pierre	Atom probe tomography characterization of SiO2/4H-SiC interface
Crisci, Alexandre	Physical Vapor Deposition of a-SiC thin films for optical applications
Crnjac, Andreo	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations
Croot, Alex	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Crupi, Isodiana	Formation of Ti ohmic contact on p-SiC by laser annealing
Csato, Constantin	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
Ctvrtlik, Radim	Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Cui, Shuo	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
Curatola, Gilberto	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
D
d'Alessandro, Vincenzo	A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
D'Arrigo, Giuseppe	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
Dai, Tianxiang	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
Daliento, Santolo	Frequency investigation of SiC MOSFETs C-V curves with biased Drain
Darakchieva, Vanya	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Das, Hrishikesh	The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper) Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
Das, Suman	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
Davidsson, Joel	Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Davydovskaya, Klavdia	Dependence of the silicon carbide radiation resistance on the irradiation temperature.
Dawson, Adam	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
De Palma, Jean-François	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors
De Santi, Carlo	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Threshold voltage variation of SiC trench MOSFETs during TDDB stress
De Schepper, Luc	Unique Failure Mode of SiC MOSFETs under Accelerated HTRB Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Deguchi, Ryuta	Thermal oxidation of 4H-SiC(0001) surface in a pure CO2 ambient
Delcroix, Mathieu	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Delegan, Nazar	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Della Corte, Francesco Giuseppe	Amorphous silicon-carbide modulator based on the thermo-optic effect
Delsarto, Damiano	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Demal, Sandrine	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Deng, Xiaochuan	A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
Deretzis, Ioannis	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Deturche, Régis	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
Di Martino, Fabio	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
di-Salvo, Antonella	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Dieing, Thomas	Characterisation of Silicon Carbide surfaces prepared by PPDE
Dimitrijev, Sima	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Disarcina, Ilaria	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
Dixit, Hemant	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
Dobersberger, Witold	Spin-orbit coupling of color centers for quantum applications
Doca, Mariacristina	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Dogmus, Ezgi	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
Dojima, Daichi	Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Domeij, Martin	1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On Unique Failure Mode of SiC MOSFETs under Accelerated HTRB Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
Dong, Lindy	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
Dong, Zengbo	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Dornich, Kay	In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS) In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy (HR-SPS)
Draghici, Florin	Implicit differentiable models for wide temperature range SiC Schottky diode characterization
Draskovic, Thomas	Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing
Dressler, Rugard	High-temperature α-spectroscopy with 4H-SiC based sensors
Drouin, Alexis	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Dubois, Marie	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
Duboiskaya, Natallia	3C-SiC on Si substrates through transformation of Si and C multilayers
Dudley, Michael	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Characterization of Growth Sectors in Gallium Nitride Substrate Wafers Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Dukes, Douglas	Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals
Dumm, Timothy	Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing
Dunger, Thoralf	Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
Döll, Joachim	3C-SiC on Si substrates through transformation of Si and C multilayers
E
Edmond, Samson	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Egeter, Michael	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
Ekman, Johan	4H-SiC substrates using the Fast Sublimation Growth Process
Eliseev, Ilia	Monitoring of graphene properties in the process of viral biosensor manufacturing
Elpelt, Rudolf	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes
Enjoji, Yuya	Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress
Entani, Shiro	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Erlbacher, Tobias	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Estiri, Arash	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
Eto, Kazuma	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Evans, Jon	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
F
Faisal, Firas	Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Fan, Haibo	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
Fang, Ricky	Advanced Carbon film for high-voltage power, high-performance SiC devices
Fehr, David	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields
Felici, Giuseppe	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Fernandez, Stéphanie	Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Ferri, Matteo	Stress fields distribution and simulation in 3C-SiC resonators. Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon
Ferro, Gabriel	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
Fetzer, Brian	Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs
Fidler, Tamara	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices Advanced Carbon film for high-voltage power, high-performance SiC devices
Fiorenza, Patrick	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition Stacking faults and space charge limited current in 4H-SiC Schottky diodes Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Flandre, Denis	Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications
Flatté, Michael	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields
Foerthner, Julietta	Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Fogarassy, Zsolt	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition
Foster, Geoffrey	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper)
Fox, Oliver	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
Fragalà, Maria Elena	Charge carrier capture from prominent defect centers in 4H-SiC
Franch, Jimmy	Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
Franchi, Jimmy	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs 1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
Franke, Jörg	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
Franz, Marcus	Trace element analysis of purified graphite material
Frazzetto, Alessia Maria	Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Frazzica, Marcello	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Freeman, Taylor	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Friedel, Lukas	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Friedrich, Jochen	Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Fuchs, Alesa	Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
Fujibayashi, Hiroaki	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Fujie, Fumihiro	Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers
Fujie, Fumihiro	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
Fujii, Haruki	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Fujimoto, Hiroki	Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition
Fujioka, Hitoshi	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Fujishima, Naoto	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Fujiwara, Hirokazu	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Fujiwara, Hirokazu	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Fujiwara, Hirokazu	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Fujiyoshi, Katsuhiro	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Fukami, Yuma	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Funke, Hans-Jürgen	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
Färber, Raphael	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy
Förster, Christian	Rapid industrialization of SiC trench technologies
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Gaeb-Delvos, Christel	Trace element analysis of purified graphite material
Gajewski, Donald	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs
Galeckas, Augustinas	Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs
Gali, Adam	Carbon cluster emitters in silicon carbide Combustion synthesis of SiC towards preparation of quantum sensors
Galizia, Bruno	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition
Gallou, Yann	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
Galyukov, Alex	Effect of the Source Composition on PVT SiC in Graphite and TaC Coated Crucibles
Gammon, Peter	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper) Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs The first optimisation of a 16 kV 4H-SiC N-type IGCT An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Ganguly, Satyaki	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs
Gao, Chao	Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Gao, Yuhan	Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Garete, April Joy	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
Geenen, Filip	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Gelineau, Guillaume	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Gemmill, William	Total SiC Polishing Process Optimization for Cost of Ownership Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
Gerardot, Brian	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Gergaud, Patrice	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Ghandi, Reza	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
Ghezellou, Misagh	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers Dual configuration of shallow acceptor levels in 4H-SiC Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Giannazzo, Filippo	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition 2D materials integration on silicon carbide: a root beyond power electronics Stacking faults and space charge limited current in 4H-SiC Schottky diodes Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses
Giannazzo, Filippo	Formation of Ti ohmic contact on p-SiC by laser annealing
Godignon, Philippe	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Godignon, Philippe	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Goj, Adalbert	Answers to SiC wafer and device production challenges
Goller, Maximilian	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
Golyashov, A	Monitoring of graphene properties in the process of viral biosensor manufacturing
Gomez, Francisco	Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD
Goncalves, Helton D. M.	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Gong, Xiao	The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC
Gossmann, Hans	Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices
Goswami, Shubhodeep	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
Goto, Tetsuya	Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Gott, James	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability
Gottscholl, Andreas	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
Graham, Andrew	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
Grasso, Agata	A comparison between different post grinding processes on 4H-SiC wafers
Greco, Giuseppe	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition
Green, David	Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance
Green, Ronald	Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Greenhorn, Scott	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
Greer, Lawrence	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
Grenier, Adeline	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Griswold, Sam	Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals
Grossner, Ulrike	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy High-energy ion channeling for deep implantation of Al into 4H-SiC Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling Accuracy of Split C-V Characterization of SiC Power MOSFETs Dual configuration of shallow acceptor levels in 4H-SiC Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Grossner, Ulrike	Power cycling of SiC MOSFETs packaged in different module’s solutions
Groß, Fabian	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
Grulimund, Daniel	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Gryglewicz, Jacek	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Guarnera, Alfio	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Gudi, Hemanth	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Guimera Coll, Pablo	Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
Guiot, Eric	Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Gum, Jeffrey	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
Gushchina, Ekaterina	Monitoring of graphene properties in the process of viral biosensor manufacturing
Gutierrez, Liliana	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects
Guy, Owen	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Günther, Stephan	Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
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Haasmann, Daniel	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Habenicht, Sönke	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Habersat, Daniel	Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Hahn, Rainer	High-temperature reorganization behavior of porous 4H-SiC thin foils
Hajzus, Jenifer	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Novel Graphene and SiC Epitaxy to Enable Film Transfer Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Halkali, Celine	Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC DFT modeling of crystallographic defects in SiC polytypes
Hallén, Anders	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact Charge carrier capture from prominent defect centers in 4H-SiC
Hammer, René	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules DFT modeling of crystallographic defects in SiC polytypes
Han, Kijeong	Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
Han, Lei	Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation
Han, Sung Woong	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Hanawa, Masafumi	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Hanf, Michael	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
Hanlin, Xie	SmartSiCTM Substrates: A Boon to Drain Metallization Process
Hara, Masahiro	Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC
Hara, Masahiro	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes
Harada, Shinsuke	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Harada, Shinsuke	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Harada, Shunta	Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects 3-dimensional observation of dislocations in 4H-SiC using focused light birefringence Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper) Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
Harada, Shunta	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Harada, Shunta	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Harii, Kazuya	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Hartmann, Andrew	HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution
Hasegawa, Masaki	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Haspel, Daniel	Characterisation of Silicon Carbide surfaces prepared by PPDE
Hassant, Cyril	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers
Hatakeyama, Tetsuo	A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs
Hatta, Naoki	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Hawes, Mike	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation How to improve power device / module development efficiency
He, Zhaowen	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
Heimler, Patrick	Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Heitmann, Johannes	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Heller, René	High-energy ion channeling for deep implantation of Al into 4H-SiC
Hellinger, Carsten	Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC
Hendricks, Nolan	Ga2O3/SiC Heterostructure Schottky Diodes
Heremans, Joseph F.	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Herrmann, Clemens	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes
Heyers, Klaus	Rapid industrialization of SiC trench technologies
Hidaka, Atsuki	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Hilsenbeck, Jochen	Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
Hino, Shiro	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Hinojosa, Miguel	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations
Hirai, Hirohisa	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
Hiramoto, Shion	500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs
Hirano, Katsuhiko	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Hironaka, Yoichi	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Hitchcock, Collin	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
Ho, Garrick	The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC
Ho, Lok-Ping	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Hochreiter, André	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
Hoffmann, Felix	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
Hoffmann, Werner	Trace element analysis of purified graphite material
Holt, Martin V.	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Honda, Tomonori	Determination of SiC MOS interface roughness from TEM image by using machine learning
Hong, Soon-Ku	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
Horiai, Akiyoshi	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Hosoi, Takuji	Thermal oxidation of 4H-SiC(0001) surface in a pure CO2 ambient
Hozoji, Hiroshi	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Hsiao, Jui-Tse	A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
Hsiao, Yi-Kai	Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
Hsieh, Wan-Ting	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances
Hsu, Fu-Jen	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
Hu, Jia-Wei	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
Hu, Shanshan	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Huang, Bing	Carbon cluster emitters in silicon carbide
Huang, Chien-Neng	Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances
Huang, Chih-Fang	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
Huang, Linhua	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Hui Bui, Long	Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
Huiqin, Zhou	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Hukunaga, Hitomi	Atomic Diffusion Bonding using nitride films and oxide films
Hull, Brett	Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs
Humlicek, Josef	Understanding the Material Loss in the Laser Based SiC Wafer
Hung, Chia-Lung	Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
Hung, Hsiang-Ting	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
Hung, Wei-Chieh	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Hunter, Gary	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
Hurley, Claire	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
Hwang, Taewook	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
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Iatosti, Christophe	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
Iden, Shunto	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Igarashi, Yasuyuki	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
Ihle, Jonas	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules
Iijima, Akifumi	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Iijima, Ryosuke	Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs
Ikenoue, Hiroshi	Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Ikeya, Naohisa	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
Im, Youngbin	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Ingenito, Andrea	Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Ingman, Jimmy	Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
Ino, Kazuhide	Technology and Business Development of SiC MOSFET: Retrospect and Prospect
Inohana, Rei	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation
Inoue, Yuta	Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
Irace, Andrea	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Frequency investigation of SiC MOSFETs C-V curves with biased Drain A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Isaacson, Caleb	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs
Isacson, Mathias	Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
Ishibashi, Naoto	Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers
Ishida, Yuuki	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Ishida, Yuuki	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching
Ishikawa, Ryoya	Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes
Ishikawa, Seiji	500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
Ishikawa, Seiji	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Ising, Ulrich	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
Ivanov, Ivan	Silicon carbide as a host of color centers emitting at telecom bands Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Ivanov, Ivan G.	Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Ivanova, Tatiana	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Iwaizumi, Yuki	Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Iwakata, Yu	Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition
Iwamuro, Noriyuki	Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)
Iwata, Jun-Ichi	Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field
Iwata, Manami	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Iwata, Manami	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Izumi, Satoshi	Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations
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Jakšic, Milko	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations
Jang, Donghyun	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
Jang, Yeon-Suk	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Jayaprakash, Hitesh	SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
Jennings, Mike	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs
Jentgens, Christian	Total SiC Polishing Process Optimization for Cost of Ownership Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
Jeon, Gukhwa	Analysis of TID effects through gamma-ray irradiation experiments
Jeon, Joon-Hyeok	Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Jeong, Seong-Min	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Ji, In-Hwan	UIS ruggedness of parallel 4H-SiC MOSFETs
Ji, Shiyang	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Jiang, Liu	Advanced Carbon film for high-voltage power, high-performance SiC devices
Jin, Qimin	Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates
Johnson, Brett	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
Johnson, Tammy	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
Jomard, François	Physical Vapor Deposition of a-SiC thin films for optical applications
Jones, Ben	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Jormanainen, Joni	Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
Jousseaume, Yann	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
Jung, Carl	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Jung, Hyundon	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
Jung, Su-Yeong	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Jung, Su-Yeong	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Justice, Joshua	Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
Justice, Joshua	The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)
K
Kabelaan, Loic	SmartSiCTM Substrates: A Boon to Drain Metallization Process
Kadoya, Shotaro	Proposal of damage-free SiC wafer dicing using water jet guided laser
Kagawa, Yasuhiro	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Kagoshima, Eiji	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Kai, Toya	500°C Operation of 4H-SiC SRAM
Kakimoto, Yoshiaki	Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Kakutani, Daichi	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Kalbfleisch, Sebastian	Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines
Kallinger, Birgit	Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Kallon, Elias	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Kamei, Koji	Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
Kamihata, Shinji	A SiO2/SiC interface formed by direct bonding of SiO2 and SiC
Kaminski, Nando	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
Kaminski, Pawel	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
Kanda, Takahiro	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Kaneko, Mitsuaki	Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer High-mobility SiC p-channel MOSFETs on nonpolar faces Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC Density control of single-photon sources formed at a SiO2/SiC interface (invited poster) Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs
Kaneko, Mitsuaki	Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes
Kaneko, Mitsuaki	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Kaneko, Mitsuaki	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes
Kaneko, Tadaaki	Non-Destructive Characterization of Buried Damage in SiC Substrates". No mater how good bulk SiC substrates and epi processes are, proper polishing/CMP and characterization of the surface and subsurface damage are critical for device yield and reliability (invited paper) Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Kanemura, Takashi	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Kang, Daehwan	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Kang, Hyemin	Gate Ringing and Dynamic Capacitance of SiC MOSFETs
Kang, Inho	Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Kang, Min Jae	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate. Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Kang, Soohyun	1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
Kang, Tai-Young	Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Kang, Ye Hwan	Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Karhu, Robin	Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Kassir, Salman	HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution
Katayama, Keita	Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Kato, Fumiki	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Kato, Masashi	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) 3-dimensional observation of dislocations in 4H-SiC using focused light birefringence Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation
Kato, Tomohisa	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) 3-dimensional observation of dislocations in 4H-SiC using focused light birefringence Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation
Kato, Tomohisa	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching
Kawahara, Koutarou	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Kawanishi, Sakiko	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper)
Kayao, Kiyoto	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
Kenel, Christoph	Power cycling of SiC MOSFETs packaged in different module’s solutions
Kennerly, Stacey	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
Kentaro, Kutsukake	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Kerdilès, Sébastien	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Kicin, Slavo	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Kil, Tae-Hyeon	Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing
Kilchytska, Valeriya	Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications
Kim, Chaeyun	Analysis of TID effects through gamma-ray irradiation experiments
Kim, Chang-Min	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Kim, Chungjung	Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET Carbon control method in SIC MOSFET with Chlorine and Vth stability
Kim, Dea-Hee	Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Kim, Dong-Seok	Analysis of TID effects through gamma-ray irradiation experiments
Kim, Dong-Wook	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Kim, Dong-Wook	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Kim, Eun-Ock	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Kim, Eun-Ock	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Kim, Hyoung Woo	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Kim, Il-Gon	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
Kim, Inkyu	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Kim, Jeff	Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
Kim, Jung Gyu	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
Kim, Jung-Gyu	Design optimization of insulating materials for 4H-SiC crystal Ingot growth The role of air-pocket in crucible structure for high quality SiC crystal growth
Kim, Jung-Gyu	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Kim, Jung-Gyu	4H-SiC crystal growth using recycled SiC powder source
Kim, Junghun	Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Kim, Min-Yeong	Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD Ga2O3/SiC Heterostructure Schottky Diodes
Kim, Minkyung	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Kim, Seongjun	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate. Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Kim, Su-Ho	Design optimization of insulating materials for 4H-SiC crystal Ingot growth
Kim, Su-Ho	The role of air-pocket in crucible structure for high quality SiC crystal growth
Kim, Su-Ho	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Kim, Yeonjeong	Normally-off 1200V Silicon Carbide JFET Diode with Low VF
Kim, Yong-Hyeon	Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Kim, Young Jo	Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Kimoto, Shinichi	Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs
Kimoto, Tsunenobu	Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer High-mobility SiC p-channel MOSFETs on nonpolar faces Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates
Kimoto, Tsunenobu	Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC
Kimoto, Tsunenobu	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Kimoto, Tsunenobu	Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs
Kimoto, Tsunenobu	Density control of single-photon sources formed at a SiO2/SiC interface (invited poster)
Kimoto, Tsunenobu	Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes
Kimoto, Tsunenobu	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Kimoto, Tsunenobu	A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter
Kimoto, Tsunenobu	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes
Kirnbauer, Alexander	High-temperature reorganization behavior of porous 4H-SiC thin foils
Kitahara, Koki	Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
Kitawaki, Takeaki	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC
Klein, Marcus	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
Klemm, Roy	Answers to SiC wafer and device production challenges
Klipfel, Nadja	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs
Klotchenko, Sergey	Monitoring of graphene properties in the process of viral biosensor manufacturing
Knoll, Lars	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations
Knolle, Wolfgang	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Kobayashi, Izumi	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper)
Kobayashi, Keisuke	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Kobayashi, Keisuke	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Kobayashi, Keisuke	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Kobayashi, Kenji	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Kobayashi, Motoki	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Kobayashi, Ryosuke	Comparison of Si CMOS and SiC CMOS Operational Amplifiers
Kobayashi, Takuma	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties A SiO2/SiC interface formed by direct bonding of SiO2 and SiC Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
Kobelev, Anton	Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma
Kocher, Matthias	On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
Kochoska, Sara	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
Kochoska, Sara	The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)
Koehler, Andrew	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper)
Koerfer, Julien	Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
Kohda, Makoto	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Kojima, Kazutoshi	500°C Operation of 4H-SiC SRAM Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment.
Koller, Philipp	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Kollmuss, Manuel	Physical Vapor Deposition of a-SiC thin films for optical applications
Komora, Mojmir	Understanding the Material Loss in the Laser Based SiC Wafer
Kondo, Ren	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
Kondo, Yuuki	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Konishi, Kumiko	Development of silicide formation process on p-type SiC by laser annealing Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Koo, Chansoon	Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates
Koo, Sang-Mo	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD Ga2O3/SiC Heterostructure Schottky Diodes
Koos, Antal	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
Kornmeyer, Torsten	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Kosciewicz, Kinga	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
Kostelnik, Petr	Understanding the Material Loss in the Laser Based SiC Wafer
Kostelnik, Petr	The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)
Kotagama, Viren	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Kotagama, Virendra	Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications
Koutsourakis, George	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Kovacevic-Badstuebner, Ivana	Power cycling of SiC MOSFETs packaged in different module’s solutions Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling Accuracy of Split C-V Characterization of SiC Power MOSFETs Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Kozakai, Shota	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Kozlovski, Vitalii	Dependence of the silicon carbide radiation resistance on the irradiation temperature.
Kozlowski, Roman	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
Kozuka, Yuhei	Atomic Diffusion Bonding using nitride films and oxide films
Kranert, Christian	Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Krasowski, Michael	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
Kraus, Hannes	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
Krause, Sandra	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
Krause, Stephen	Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices Advanced Carbon film for high-voltage power, high-performance SiC devices
Krieger, Michael	Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing Photoluminescence polarization of single TS centers in 4H-SiC
Krippendorf, Florian	SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
Krishna Murthy, Hithiksha	Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Krummenacher, Mira	The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Ku, Kap Ryeol	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
Ku, Kap-Ryeol	Design optimization of insulating materials for 4H-SiC crystal Ingot growth The role of air-pocket in crucible structure for high quality SiC crystal growth
Ku, Kap-Ryeol	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Ku, Kap-Ryeol	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Ku, Kap-Ryeol	4H-SiC crystal growth using recycled SiC powder source
Ku, Kap-Ryeol	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Kuan, Chung Lun	Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
Kuboya, Shigeyuki	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching
Kuboya, Shigeyuki	First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
Kumar, Piyush	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation Dual configuration of shallow acceptor levels in 4H-SiC DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Kumar, Shiv	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) Atom probe tomography characterization of SiO2/4H-SiC interface SmartSiCTM Substrates: A Boon to Drain Metallization Process
Kumazawa, Teruaki	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Kumita, Masahiro	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Kuo, Hung-Ming	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Kuo, Hung-Ming	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Kurashima, Keisuke	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
Kurihara, Shunsuke	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Kuroki, Shin-Ichiro	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors 500°C Operation of 4H-SiC SRAM SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager 500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment. High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
Kushoro, Matteo	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Kutsukake, Kentaro	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Kutsukake, Kentaro	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
Kutsukake, Kentaro	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Kutsuki, Katsuhiro	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties
Kuwahara, Kotaro	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC
Kuwana, Ryo	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Kuzmin, Roman	Dependence of the silicon carbide radiation resistance on the irradiation temperature.
Kuznetsov, Andrej	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Kwon, Soontak	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Kwon, Yong-Jin	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
Kyoung, Sinsu	Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Kyun, Myung-Ok	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Kälin, Colin	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy
Kästner, Bernd	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
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La Magna, Antonino	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
La Via, Francesco	Hydrogen etching process of 4H-SiC (0001) in limited regions Stacking faults and space charge limited current in 4H-SiC Schottky diodes Stress fields distribution and simulation in 3C-SiC resonators. Impact of Al ion implantation on 4H-SiC epitaxial layer GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT 250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances. Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon Free-standing 3C-SiC p-type doping by Al ion implantation Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
La Via, Francesco	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Lafford, Tamzin	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
Lagowski, Jacek	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Laha, Sibasish	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
Landi, Antonio	A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
Lang, Andrew	Novel Graphene and SiC Epitaxy to Enable Film Transfer
Lang, Michael	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Langan, Jared	UIS ruggedness of parallel 4H-SiC MOSFETs
Lapertot, Gerard	Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Larcher, Luca	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements
Latzel, Sabine	Trace element analysis of purified graphite material
Laudani, Antonio	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Laviéville, Romain	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Lazar, Mihai	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Le, Van-Hoan	Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Lea, Joshua	Characterisation of Silicon Carbide surfaces prepared by PPDE
Lebedev, Alexander	Dependence of the silicon carbide radiation resistance on the irradiation temperature. Monitoring of graphene properties in the process of viral biosensor manufacturing
Lebedev, Sergey	Monitoring of graphene properties in the process of viral biosensor manufacturing
Ledoux, Olivier	Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface
Lee, Bongmook	High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2
Lee, Chae-Young	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Lee, Chae-Young	4H-SiC crystal growth using recycled SiC powder source
Lee, Cheol-Ho	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Lee, Cheol-Ho	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Lee, Dong	Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
Lee, Geon-Hee	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Lee, Giho	HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution
Lee, Ha-Lin	Design optimization of insulating materials for 4H-SiC crystal Ingot growth The role of air-pocket in crucible structure for high quality SiC crystal growth Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Lee, Ho Nam	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Lee, Hyun-Woo	Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Lee, Hyung-Jin	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Lee, Im-Kyu	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Lee, Jeongyun	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Lee, Jimin	Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET Carbon control method in SIC MOSFET with Chlorine and Vth stability
Lee, Jong-Won	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Lee, Jong-Won	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Lee, Joseph	Advanced Carbon film for high-voltage power, high-performance SiC devices
Lee, Kung-Yen	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Lee, Kwangwon	Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
Lee, Sang-Il	Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Lee, Seung-Jun	Design optimization of insulating materials for 4H-SiC crystal Ingot growth The role of air-pocket in crucible structure for high quality SiC crystal growth
Lee, Seung-Jun	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Lee, Seung-Jun	4H-SiC crystal growth using recycled SiC powder source
Lee, Seung-Jun	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Lee, Tae-Hee	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD Ga2O3/SiC Heterostructure Schottky Diodes
Lee, Won-Jae	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Design optimization of insulating materials for 4H-SiC crystal Ingot growth Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method Quality improvement of SiC substrate surface with using non-abrasive CMP slurry Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method 4H-SiC crystal growth using recycled SiC powder source The role of air-pocket in crucible structure for high quality SiC crystal growth High-quality SiC crystal growth by temperature gradient control at initial growth stage Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Lee, Yeonju	Gate Ringing and Dynamic Capacitance of SiC MOSFETs
Lehmeyer, Johannes	Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center Photoluminescence polarization of single TS centers in 4H-SiC
Leib, Jürgen	SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Leitgeb, Markus	High-temperature reorganization behavior of porous 4H-SiC thin foils A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
Lekavicius, Ignas	Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Lelis, Aivars	Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Lelis, Aivars	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations
Levinshtein, Mikhail	Dependence of the silicon carbide radiation resistance on the irradiation temperature.
Li, Bin	Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment
Li, Jingwei	Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Li, Jinlong	WBG Semiconductor Industry Status and Prospects
Li, Juanheng	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Li, Lingfeng	Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
Li, Pei	Carbon cluster emitters in silicon carbide
Li, Qian	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Li, Qiliang	Ga2O3/SiC Heterostructure Schottky Diodes
Li, Qing	Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Li, Rongrong	Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
Li, Sammy	WBG Semiconductor Industry Status and Prospects
Li, Sihua	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Li, Song	Carbon cluster emitters in silicon carbide
Li, Songjun	A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
Li, Xu	A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate
Li, Xuan	A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate
Li, Xuan	Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
Li, Zhengming	Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center
Li, Zhiwen	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
Liang, Fu-Chen	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Liao, Michael	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Liao, Pei-Chun	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures
Lichtenwalner, Daniel	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
Licitra, Christophe	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Liguda, Christian	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
Lilja, Louise	Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers
Lim, Jang-Kwon	Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Lim, Minwho	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Lim, See Kiat	The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC
Lin, Huamao	High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC)
Lin, Huan	Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment
Lin, Li-Jung	Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
Lin, Tianxiang	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Ling, Francis Chi-Chung	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Liu, Rui	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Liu, Xing	Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Liu, Yafei	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Liu, Yancong	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Liu, Yong	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Lloyd-Hughes, James	An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Lo Nigro, Raffaella	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition
Lomax, Peter	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Long, Kevin	Enabling Next Generation WBG Semiconductors Using CVD Technology
Lophitis, Neo	Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance The first optimisation of a 16 kV 4H-SiC N-type IGCT An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Lophitis, Neophytos	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Lou, Qian	Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
Lu, Lu	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Lu, Yaoqin	Physical Vapor Deposition of a-SiC thin films for optical applications Amorphous silicon-carbide modulator based on the thermo-optic effect Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Luethi, Noah	Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling
Luisier, Mathieu	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy
Lukco, Dorothy	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs
Lutz, Josef	Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Lv, Yunqiang	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Lüders, Ulrike	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs
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Mabuchi, Yuichiro	Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
Maccagni, Piera	Free-standing 3C-SiC p-type doping by Al ion implantation
Macdonald, David	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
MacMillan, Michael Macmillan	Enabling Next Generation WBG Semiconductors Using CVD Technology
Maeda, Noriyuki	Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs
Maeda, Tomonori	500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
Magnusson, Björn	Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
Mahadev, Niraj	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Mahadik, Nadeemullah	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Maimon, Ory	Ga2O3/SiC Heterostructure Schottky Diodes
Makhoul, Ralph	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Makino, Takahiro	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Makino, Takahiro	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Makita, Hiroyuki	Atomic Diffusion Bonding using nitride films and oxide films
Maleville, Christophe	SmartSiC™: a greener, faster and better technology for SiC Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Malgioglio, Giuseppe Luigi	A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
Mallemace, Elisa Demetra	Amorphous silicon-carbide modulator based on the thermo-optic effect
Mancarella, Fulvio	Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Mancuso, Alfio Samuele	Hydrogen etching process of 4H-SiC (0001) in limited regions
Mancuso, Paola	Formation of Ti ohmic contact on p-SiC by laser annealing
Mank, Hugues	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Manning, Ian	A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC
Manno, Antonio	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Marchetti, Benjamin	Rapid industrialization of SiC trench technologies
Marcuzzi, Alberto	Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Marcuzzi, Alberto	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper)
Maresca, Luca	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Frequency investigation of SiC MOSFETs C-V curves with biased Drain Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Marrale, Maurizio	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Martinella, Corinna	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
Martinez, Antonio	Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs
Martinez-Valenzuela, Marcelo	DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
Martino, Edoardo	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Martins, Maria I.M.	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
Martí Hidalgo, Inés	High-energy ion channeling for deep implantation of Al into 4H-SiC
Maruhashi, Takumi	Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method
Masante, Cédric	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface
Masin, Fabrizio	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper)
Maslougkas, Sotirios	Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
Massimino, Maurizio	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Mastro, Michael	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Masturzo, L.	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Masumoto, Keiko	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Masunaga, Masahiro	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Matacena, Ilaria	Frequency investigation of SiC MOSFETs C-V curves with biased Drain
Matoba, Nobuhiro	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
Matsubara, Yasutaka	Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
Matsuoka, Taiga	A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter
Matsuoka, Taiga	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes
Matsuoka, Taiga	Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer
Matsushita, Yohsuke	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
Matsushita, Yu-ichiro	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field
Matsushita, Yu-ichiro	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Matsuura, Hideharu	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Matsuzawa, Satoshi	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
Mawby, Phil	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Mawby, Philip	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry The first optimisation of a 16 kV 4H-SiC N-type IGCT An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Max, Michael	Total SiC Polishing Process Optimization for Cost of Ownership Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
May, Alexander	Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C
Mazzamuto, Fulvio	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Mazzamuto, Samantha	Characterisation of Silicon Carbide surfaces prepared by PPDE
Mazzillo, Massimo	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
Meda, Laura	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Medina, Elisabetta	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Megalini, Ludovico	Advanced Carbon film for high-voltage power, high-performance SiC devices
Meguro, Tatsuya	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
Melati, Daniele	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Meli, Alessandro	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Mello, Domenico	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
Melnyk, Kyrylo	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs
Melnyk, Kyrylo	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Mendes Martins, Maria	Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy
Meneghesso, Gaudenzio	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
Meneghini, Matteo	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Mengotti, Elena	Power cycling of SiC MOSFETs packaged in different module’s solutions Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
Merkle, Arno	Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
Mesemanolis, Athanasios	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Metreveli, Alex	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Michaud, Jean-François	Nickel ohmic contacts formed on 4H-SiC by UV laser annealing
Michałowski, Paweł	Transient-enhanced diffusion of implanted aluminum in 4H-SiC
Michez, Alain	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs
Michihata, Masaki	Proposal of damage-free SiC wafer dicing using water jet guided laser
Michon, Adrien	Characterization of very thin 3C-SiC epilayers on Si
Mihaila, Andrei	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Mihara, Hiroshi	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Miho, Tagawa	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Mikami, Kyota	Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate High-mobility SiC p-channel MOSFETs on nonpolar faces
Mikolajick, Thomas	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
Mikula, Martin	Understanding the Material Loss in the Laser Based SiC Wafer
Miller, Andrei	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Milluzzo, Giuliana	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Misra, Veena	High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2
Mitani, Takeshi	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper)
Mitchell, Jacob	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Mitsuzawa, Kana	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
Miura, Hitoshi	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Miyawaki, Nobumasa	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Mizuochi, Norikazu	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
Mizushima, Ichiro	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
Mletschnig, Kristijan Luka	Transient-enhanced diffusion of implanted aluminum in 4H-SiC
Moe, Anne	Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
Moeggenborg, Kevin	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography
Moens, Peter	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Unique Failure Mode of SiC MOSFETs under Accelerated HTRB Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Moffat, Jonathan	Characterisation of Silicon Carbide surfaces prepared by PPDE
Momeni, Davood	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
Monaghan, Finn	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs
Monfreda, Sara	Testing challenges for latest SiC devices
Monnoye, Sylvain	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Montefiori, Marco	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Mony, Karine	Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Moon, Jeong Hyun	Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Moon, Soo-Young	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Morais, Magali	Physical Vapor Deposition of a-SiC thin films for optical applications
Morais Bezerra, Sarah	Combustion synthesis of SiC towards preparation of quantum sensors
Morel, Hervé	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Mori, Yuki	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Morimoto, Tadao	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs
Morioka, Naoya	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
Morisette, Dallas	Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper)
Morishita, Hiroki	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
Morita, Takuya	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
Moriyama, Yoshikazu	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
Moscato, Samuele	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Moser, Maximilian	Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC
Moser, Neil	Ga2O3/SiC Heterostructure Schottky Diodes
Mouhoubi, Samir	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
Moulin, Alexandre	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Moulin, Gabrielle	Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Mueller, Malte	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
Mulcahy, Chris	Characterisation of Silicon Carbide surfaces prepared by PPDE
Mulpuri, Vamsi	New Generation SiC MPS Diodes with Low Schottky Barrier Height 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Muoio, Annamaria	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Muoio, Annamaria	Stress fields distribution and simulation in 3C-SiC resonators.
Murakami, Masataka	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
Murakami, Takeshi	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Muraoka, Arina	Atomic Diffusion Bonding using nitride films and oxide films
Murata, Koichi	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers 3-dimensional observation of dislocations in 4H-SiC using focused light birefringence High-energy ion channeling for deep implantation of Al into 4H-SiC Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Murayama, Kenta	Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
Murphy, Aled	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
Musya, Michimasa	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Myers, Kevin	UIS ruggedness of parallel 4H-SiC MOSFETs
Myers-Ward, Rachael	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Novel Graphene and SiC Epitaxy to Enable Film Transfer Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Müller, Stephan	Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Mützenich, Dirk	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
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Na, Jun-Hyuck	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry 4H-SiC crystal growth using recycled SiC powder source High-quality SiC crystal growth by temperature gradient control at initial growth stage
Na, Moonkyong	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
Nagai, Takahiro	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Nagasawa, Hiroyuki	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Nagase, Yui	Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics
Nagel, Michel	Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs
Najbauer, Eszter	Comparative optical metrologies of implanted SiC wafers
Nakajima, Akira	Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices
Nakajima, Yuta	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Nakamura, Daisuke	Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Nakamura, Daisuke	Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC
Nakanishi, Yuma	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Nakanuma, Takato	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties
Nakata, Shuhei	Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics
Nakayama, K	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC
Nam, Tai-Jin	Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Narita, Shunki	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Narita, Syunki	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Narita, Syunki	Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs
Narumi, Kazumasa	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper)
Naschekin, Aleksei	Monitoring of graphene properties in the process of viral biosensor manufacturing
Natzke, Philipp	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy Power cycling of SiC MOSFETs packaged in different module’s solutions
Naydenov, Kaloyan	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Nemeth, Miklos	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
Nemoto, Norio	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Nestler, Matthias	Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
Neubauer, Mirjam	Spin-orbit coupling of color centers for quantum applications
Neudeck, Philip G.	High Temperature Devices for Aerospace Applications Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs
Neville, Tom	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation How to improve power device / module development efficiency
Newton, Andrew	Characterisation of Silicon Carbide surfaces prepared by PPDE
Nguyen, Linh	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates
Nicolosi, Dario	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Niewelt, Tim	An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Nikolatos, Charalampos	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Nishihara, Yoshitaka	Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
Nishihata, Rinya	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Nishikawa, Kazuyasu	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Nishikawa, Tetsuri	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
Nishimura, Tomoaki	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper)
Nishino, Junichi	Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography
Nishiwaki, Tsuyoshi	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Nishiwaki, Tsuyoshi	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Nishiya, Yusuke	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation
Niskanen, Kimmo	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs
Nistor, Iulian	Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance
Niu, Xiping	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Nobs, Martin	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
Nomoto, Shinji	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Novak, Tomas	Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Novak, Tomas	The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)
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O'Neill, Anthony	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Odekirk, Bruce	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Odoul, Sidoine	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Ogawa, Ayato	Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation
Ogawa, Shingo	Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Oh, Chanhyoung	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
Oh, Jang Seok	Advanced Carbon film for high-voltage power, high-performance SiC devices
Oh, Jong-Min	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Ohshima, Takeshi	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors 500°C Operation of 4H-SiC SRAM Silicon carbide as a host of color centers emitting at telecom bands Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment. Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Ohshima, Takeshi	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Ohtani, Naoki	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Ohtani, Naoki	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Ohtani, Noboru	Proposal of damage-free SiC wafer dicing using water jet guided laser Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
Ohuchi, Yuki	Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations
Okamoto, Dai	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation
Okamoto, Dai	A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs
Okamoto, Mitsuo	A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
Okamoto, Takeshi	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Okamura, Tsubasa	SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors
Okino, Hiroyuki	Development of silicide formation process on p-type SiC by laser annealing
Okuda, Masaru	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Okumura, Hajime	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Oldham, Neal	UIS ruggedness of parallel 4H-SiC MOSFETs
Olsen, Sarah	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Oneata, Dan-Theodor	Implicit differentiable models for wide temperature range SiC Schottky diode characterization
Onishi, Kentaro	Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties
Onogi, Atsushi	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Onozawa, Yuichi	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Opprecht, Mathieu	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Oritsuki, Yasunori	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Osanai, Tsutomu	Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography
Oshima, Masaaki	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Ou, Haiyan	Silicon carbide based optical frequency comb (invited paper) Novel photonic applications of SiC Physical Vapor Deposition of a-SiC thin films for optical applications Amorphous silicon-carbide modulator based on the thermo-optic effect Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Ousdal, Erlend	Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
Ozaki, Taisei	Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment.
Ozono, Kunihide	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
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Paiar, Fabiola	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Palit, Pratim	Advanced Carbon film for high-voltage power, high-performance SiC devices
Palmer, Jacob	Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing
Panasci, Salvatore Ethan	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
Papathanasiou, Niklas	Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications
Parisi, Miriam	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Parisini, Antonella	Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems
Park, Byeong-Hun	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Park, Byung-Gun	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate. Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Park, Changjoon	Normally-off 1200V Silicon Carbide JFET Diode with Low VF
Park, Chulhwan	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Park, Jae-Hyun	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Park, Jaehoon	New Generation SiC MPS Diodes with Low Schottky Barrier Height 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Park, Jong-Hwi	Design optimization of insulating materials for 4H-SiC crystal Ingot growth The role of air-pocket in crucible structure for high quality SiC crystal growth
Park, Jong-Hwi	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Park, Jong-Hwi	4H-SiC crystal growth using recycled SiC powder source
Park, Kyeongseok	Normally-off 1200V Silicon Carbide JFET Diode with Low VF
Park, Kyeongseok	Next step in SiC technology 1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
Park, Se-Rim	Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Park, Yeongeun	Analysis of TID effects through gamma-ray irradiation experiments Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Park, Young Jae	Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate. Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Park, Young Jae	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC
Pascu, Razvan	Implicit differentiable models for wide temperature range SiC Schottky diode characterization Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films
Pavlekovic, Markus	A Meister solution for optimized grinding of laser split silicon carbide surfaces
Payan Ramirez, Luis Emilio	The Rise of 2D SiC Semiconductors
Pearl, Haim	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Pecz, Bela	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
Peng, Hongyu	Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Peng, Xin	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Pennachio, Daniel	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Novel Graphene and SiC Epitaxy to Enable Film Transfer Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Pensavalle, Jake Harold	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Perazzi, Marco	High-temperature reorganization behavior of porous 4H-SiC thin foils
Perera, Kushani	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry
Peretti, Jacques	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
Perros, Alexander	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Persson, Axel R.	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Pesic, Milan	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements
Peters, Jan-Hendrik	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
Petrov, Vasilii	Monitoring of graphene properties in the process of viral biosensor manufacturing
Pezoldt, Joerg	3C-SiC on Si substrates through transformation of Si and C multilayers
Pfeffer-Matthews, Sam	Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures
Pfusterschmied, Georg	High-temperature reorganization behavior of porous 4H-SiC thin foils A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
Pham, Thanh-Toan	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs 1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
Phulpin, Tanguy	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs
Phung, Luong-Viet	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Pichler, Peter	Transient-enhanced diffusion of implanted aluminum in 4H-SiC
Pieruccini, Marco	Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems
Pillai, Avinash	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates
Piluso, Nicolo	A comparison between different post grinding processes on 4H-SiC wafers Impact of Al ion implantation on 4H-SiC epitaxial layer GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy
Pinault-Thaury, Marie-Amandine	Physical Vapor Deposition of a-SiC thin films for optical applications
Pirnaci, Massimo Davide	Reduction of the SiC trench sidewalls striations.
Pitchiya, Aswin Prathap	Advanced Carbon film for high-voltage power, high-performance SiC devices
Planson, Dominique	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Plehanov, A	Monitoring of graphene properties in the process of viral biosensor manufacturing
Pobegen, Gregor	Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC
Polisski, Gennadi	Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping. Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Pongracz, Anita	Comparative optical metrologies of implanted SiC wafers
Pookpanratana, Sujitra	Ga2O3/SiC Heterostructure Schottky Diodes
Portail, Marc	Characterization of very thin 3C-SiC epilayers on Si
Potera, Rahul	UIS ruggedness of parallel 4H-SiC MOSFETs
Potier, Alexandre	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
Pound-Lana, Gwenaelle	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
Prabhu, Gopal	Advanced Carbon film for high-voltage power, high-performance SiC devices
Pradervand, Claude	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Preti, Silvio	LPE + ASM – Combination powers SiC growth
Priobrazhenskii, Sergey	Monitoring of graphene properties in the process of viral biosensor manufacturing
Pristavu, Gheorghe	Implicit differentiable models for wide temperature range SiC Schottky diode characterization Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films
Prokop, Norman	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
Prokscha, Thomas	Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation
Prudkovskiy, Vladimir	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Prymus, Tomas	Understanding the Material Loss in the Laser Based SiC Wafer
Puglisi, Valeria	Formation of Ti ohmic contact on p-SiC by laser annealing
Pulvirenti, Mario	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods Unclamped inductive switching response of SiC MOSFETs under extreme slow transient
Purdy, Andrew	Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Pushkarev, Vladimir	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC
Puzyk, Mikhail	Monitoring of graphene properties in the process of viral biosensor manufacturing
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Qi, Yunyi	Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode
Qi, Yunyi	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
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Rabinzohn, Patrick	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Race, Salvatore	Power cycling of SiC MOSFETs packaged in different module’s solutions Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling Accuracy of Split C-V Characterization of SiC Power MOSFETs Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Rachor, Kevin	How process scaling offers maximum flexibility of SiC wafering along the complete process chain Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
Raciti, Domenica	Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates. Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy
Radisson, Damien	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Radu, Ionut	SmartSiCTM Substrates: A Boon to Drain Metallization Process
Raffa, Alessandra	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods
Raghothamachar, Balaji	Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Raghothamachar, Balaji	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Raghu, Appu Vengattoor	High-temperature reorganization behavior of porous 4H-SiC thin foils
Rahimo, Munaf T.A.	Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance
Rajabzadeh, Zahra	Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC DFT modeling of crystallographic defects in SiC polytypes
Rajgopal, Srihari	Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs
Rana, Tawhid	A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC
Ranjan, Akhil	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC
Rao, Sandro	Amorphous silicon-carbide modulator based on the thermo-optic effect
Rascuna, Simone	Formation of Ti ohmic contact on p-SiC by laser annealing Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
Rathi, Servin	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
Ravi, Loganathan	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
Ravot, Benoit	Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Rebai, Marica	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Reimann, Christian	Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Reiprich, Johannes	3C-SiC on Si substrates through transformation of Si and C multilayers
Reitano, Riccardo	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Reiter, Kristiane	Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Rengarajan, Rajan	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
Renna, Marco	A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
Renz, Arne	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs The first optimisation of a 16 kV 4H-SiC N-type IGCT An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Renz, Arne	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Riccio, Michele	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Frequency investigation of SiC MOSFETs C-V curves with biased Drain Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Richard, Marine	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
Richardeau, Frédéric	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Riddell, Kevin	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Rinderer, Caleb	UIS ruggedness of parallel 4H-SiC MOSFETs
Rocaforte, Fabrizio	Formation of Ti ohmic contact on p-SiC by laser annealing
Roccaforte, Fabrizio	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition Stacking faults and space charge limited current in 4H-SiC Schottky diodes Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Rodrigues Batagin, Higor	Testing challenges for latest SiC devices
Roenkov, Aleksandr	Monitoring of graphene properties in the process of viral biosensor manufacturing
Rogers, Steven	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
Roh, Dwight	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Roig, Jaume	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
Rolland, Emmanuel	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface
Romaner, Lorenz	Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC DFT modeling of crystallographic defects in SiC polytypes
Romano, Daniele	Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs
Romano, Francesco	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Romano, Gianpaolo	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations
Romano, Gianpaolo	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Rommel, Mathias	Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Roncaglia, Alberto	Stress fields distribution and simulation in 3C-SiC resonators. Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon
Rongve, Anna	Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
Rorsman, Niklas	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Rosina, Milan	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
Ross, Neil	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Rossitto, Antonio	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Rossman, Dennis	Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
Rottwitt, Karsten	Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications
Rouchier, Séverin	Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Rowe, Alistair	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
Roy, Atreyee	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Roy, Emmanuel	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
Roze, Fabien	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Roze, Fabien	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Rubin, Leonard	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Ruffino, Francesco	Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Ruland, Gary	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates
Rummel, Brian	Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper)
Rusch, Oleg	Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
Russell, Stephen	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Russo, Alfio	TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses
Russo, Andrea	Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Russo, Manuela	Free-standing 3C-SiC p-type doping by Al ion implantation
Ryu, Ho-Sung	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Ryu, Sei-Hyung	Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
Rüb, Michael	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
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Saddow, Stephen E.	Silicon Carbide Biotechnology There is more to SiC than power electronics!
Saeki, Hidenori	Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations
Saggio, Mario	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition The golden age of SiC: Turning the potential of SiC into opportunities for energy conversion applications Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods Unclamped inductive switching response of SiC MOSFETs under extreme slow transient TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Saito, Jun	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Saito, Jun	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Saito, Takayuki	Atomic Diffusion Bonding using nitride films and oxide films
Sakai, Kota	Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD
Sakakima, Hiroki	Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations
Sakane, Hitoshi	Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper)
Sako, Hideki	Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Sakuraba, Masao	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Salvatore, Giovanni Antonio	Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Salvo, Luciano	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods Unclamped inductive switching response of SiC MOSFETs under extreme slow transient
Sameshima, Junichiro	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
Samperi, Orazio	Charge carrier capture from prominent defect centers in 4H-SiC
Sanchez, Dario	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Sanchez, Edward	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography
Sang, Ling	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Sangregorio, Enrico	High-temperature α-spectroscopy with 4H-SiC based sensors Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Sano, Yasuhisa	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
Sapienza, Sergio	Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon
Sapienza, Sergio	Stress fields distribution and simulation in 3C-SiC resonators.
Sato, Hiroshi	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Sato, Hisaya	3-dimensional observation of dislocations in 4H-SiC using focused light birefringence
Sato, Hisaya	Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method
Sato, Shigeo	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Sato, Shinji	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Sato, Yusuke	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Savtchouk, Alexandre	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Sazawa, Hiroyuki	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
Scalia, Laura	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices
Scalisi, Melissa Lucia	Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Scharnholz, Sigo	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Scheler, Theresa	3C-SiC on Si substrates through transformation of Si and C multilayers
Schilirò, Emanuela	Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
Schlichting, Holger	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
Schmid, Alexander	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Schmid, Patrick	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices Advanced Carbon film for high-voltage power, high-performance SiC devices Centrotherm High Temperature Annealing and Oxidation Furnaces
Schmid, Ulrich	High-temperature reorganization behavior of porous 4H-SiC thin foils A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
Schober, Maximilian	Spin-orbit coupling of color centers for quantum applications
Schober, Maximilian	Optical ionization of qubits and their silent charge states
Scholten, Dick	Modeling the charging of gate oxide under high electric field
Scholze, Andreas	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
Schraml, Michael	Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications
Schrayer, Bret	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Schroeder, Uwe	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
Schroen, Erik	Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Schuck-Buehner, Kevin	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Schultheiss, Jana	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules
Schuur, John	Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
Schwabe, Christian	Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Schwaiger, Stephan	Rapid industrialization of SiC trench technologies
Schwarz, Sabine	High-temperature reorganization behavior of porous 4H-SiC thin foils
Schwarzenbach, Walter	Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates SmartSiCTM Substrates: A Boon to Drain Metallization Process Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Schweitz, Michael A.	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Schweren, Alexander	Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
Schüler, Nadine	In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS) In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy (HR-SPS)
Sciacca, Angelo Giuseppe	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods Unclamped inductive switching response of SiC MOSFETs under extreme slow transient
Sciuto, Antonella	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
Scuderi, Viviana	Stacking faults and space charge limited current in 4H-SiC Schottky diodes Stress fields distribution and simulation in 3C-SiC resonators. Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Seltner, Niklas	Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses
Senzaki, Junji	Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Seo, Jae Hwa	Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Seo, Jung-Doo	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Seo, Jung-Doo	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Seo, Youngho	Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
Seok, Ogyun	Analysis of TID effects through gamma-ray irradiation experiments Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Severino, Andrea	Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates. A comparison between different post grinding processes on 4H-SiC wafers Impact of Al ion implantation on 4H-SiC epitaxial layer GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
Sezaki, Hiroshi	500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
Shabunina, Eugenia	Monitoring of graphene properties in the process of viral biosensor manufacturing
Shaddock, David	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
Shafizadeh, Danial	Silicon carbide as a host of color centers emitting at telecom bands Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Shah, Vishal	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
Shah, Vishal	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Shekerov, Ivan	Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Shekhawat, Deepshikha	3C-SiC on Si substrates through transformation of Si and C multilayers
Shi, Limeng	Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress
Shi, Xiaodong	Physical Vapor Deposition of a-SiC thin films for optical applications Amorphous silicon-carbide modulator based on the thermo-optic effect Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Shibata, Shunya	Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer
Shigematsu, Koki	Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Shim, KyuHa	Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices
Shima, Akio	Development of silicide formation process on p-type SiC by laser annealing Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Shimatsu, Takehito	Atomic Diffusion Bonding using nitride films and oxide films
Shimizu, Kazuya	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Shimizu, Takashi	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper)
Shimoda, Daiki	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Shimura, Takayoshi	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties A SiO2/SiC interface formed by direct bonding of SiO2 and SiC Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
Shin, Chaeho	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate. Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Shin, Hoon-Kyu	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate. Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Shin, Myeong-Cheol	Ga2O3/SiC Heterostructure Schottky Diodes
Shin, Na-Ra	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
Shin, Na-Ra	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Shin, Weon Ho	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Shin, Yun-Ji	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Shindou, Hiroyuki	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Shindou, Hiroyuki	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Shiono, Tsubasa	Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
Shmidt, Natalia	Monitoring of graphene properties in the process of viral biosensor manufacturing
Shreshta, Nishan	The Rise of 2D SiC Semiconductors
Shunta, Harada	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Siebenkotten, Dario	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Simon, Roland B.	Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Sin, Johnny	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Singh, Navab	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) Atom probe tomography characterization of SiO2/4H-SiC interface Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures SmartSiCTM Substrates: A Boon to Drain Metallization Process
Singh, Pankaj	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Singh, Rajiv	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Smecca, Emanuele	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Smirnov, Andrey	Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma
Smith, Steven	650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Smoliner, Jürgen	Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC
Sohl, Christina	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Sometani, Mitsuru	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
Son, Dong Ick	Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate.
Son, Seongphil	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Song, Euisang	Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Song, Jaejin	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Song, Qingwen	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Song, Ying	Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
Sonneville, Camille	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Sonntag, Michael	Answers to SiC wafer and device production challenges
Soto, Jake	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Soukhojak, Andrey	Resistivity as a witness of local crystal growth conditions
Spasevski, Lucia	Characterisation of Silicon Carbide surfaces prepared by PPDE
Spetik, Radim	Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Spry, David	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs
Sreenivasan, Raghav	Advanced Carbon film for high-voltage power, high-performance SiC devices
Srivastava, Aseem	Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Stache, Joachim	Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
Stahlbush, Robert	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
Stahlbush, Robert	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Staiger, Frank	High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)
Stambouli-Sene, Valérie	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
Stark, Roger	Accuracy of Split C-V Characterization of SiC Power MOSFETs
Steinegger, Patrick	High-temperature α-spectroscopy with 4H-SiC based sensors
Steinmann, Philipp	UIS ruggedness of parallel 4H-SiC MOSFETs
Steller, Nils	Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Steski, Dannie	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
Stroud, Rhonda	Novel Graphene and SiC Epitaxy to Enable Film Transfer
Stéphanie, Huet	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Sudhahar, Dwarakesh	3C-SiC on Si substrates through transformation of Si and C multilayers
Suematsu, Tomoka	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Suematsu, Tomoka	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Sugawara, Katsutoshi	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Sun, Ju-Hyeong	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Sun, Lejia	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Sundaresan, Siddarth	New Generation SiC MPS Diodes with Low Schottky Barrier Height 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Sung, Woongje	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations
Sunkari, Swapna	Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
Sunkari, Swapna	The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)
Suvorov, Alexander	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
Suzuki, Asato	Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
Suzuki, Kunihiko	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
Suzuki, Yudai	Atomic Diffusion Bonding using nitride films and oxide films
Sveinbjörnsson, Einar Ö.	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Sylvain, Guerber	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Szelag, Bertrand	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Szivos, Janos	Comparative optical metrologies of implanted SiC wafers
Sédilot, Anaël	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
Söderlund, Mikko	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
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Tabata, Toshi	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
Tabouret, Vincent	Physical Vapor Deposition of a-SiC thin films for optical applications Amorphous silicon-carbide modulator based on the thermo-optic effect Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications
Tachiki, Keita	Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate
Tagawa, Miho	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Tahara, Kosuke	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties
Takahashi, Misa	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Takahashi, Misa	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Takahashi, Satoru	Proposal of damage-free SiC wafer dicing using water jet guided laser
Takahashi, Tetsuo	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Takano, Kazumi	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
Takashima, Hideaki	Density control of single-photon sources formed at a SiO2/SiC interface (invited poster)
Takayasu, Manato	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes
Takeda, Ryo	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation How to improve power device / module development efficiency
Takeda, Yuzo	Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal
Takenaka, Kensuke	Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs
Takeshita, Akinobu	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Takeuchi, Shigeki	Density control of single-photon sources formed at a SiO2/SiC interface (invited poster)
Takeyama, Akinori	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors 500°C Operation of 4H-SiC SRAM SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment. Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Takeyama, Akinori	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Tamura, Shungo	Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal
Tanaka, Yasunori	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors 500°C Operation of 4H-SiC SRAM First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment.
Tanaka, Yasunori	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching
Tang, Xiaoyan	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Tang, Xinling	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Tanklevskaya, Elena	Monitoring of graphene properties in the process of viral biosensor manufacturing
Tanno, Takenori	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Tao, Sun	Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation
Tapfer, Leander	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
Tardocchi, Marco	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Tawara, Takeshi	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Tawara, Takeshi	Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs
Tawara, Takeshi	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Tayake, Kaito	Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Temperelli, Alex	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
Templier, Roselyne	Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Tenaglia, Dario	Reduction of the SiC trench sidewalls striations.
Tendille, Florian	Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
Teoh, Mooi Kun	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices
Tereshchenko, Oleg	Monitoring of graphene properties in the process of viral biosensor manufacturing
Terracciano, Vincenzo	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
Thomas, Amelie	SmartSiCTM Substrates: A Boon to Drain Metallization Process
Thomas, Bernd	High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)
Thompson, Andrew	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Thuries, Louis	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing Screen UV Laser Anneal Technology for next generation of SiC Devices
Thuries, Louis	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Thönelt, Nick	Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Thörnberg, Jimmy	Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
Tiebel, Georg	High-temperature α-spectroscopy with 4H-SiC based sensors
Tien Nguyen, Son	Silicon carbide as a host of color centers emitting at telecom bands Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Tissot, Benedikt	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Titze, Michael	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Toda, Kohei	Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Toh, Daisetsu	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
Toh, Daisetsu	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Tolla, Bruno	Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
Tominaga, Takaaki	Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics
Tomita, Hidemoto	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Torky, Mohamed	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
Torregrosa, Frank	Free-standing 3C-SiC p-type doping by Al ion implantation
Torres, Victor	Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals
Toru, Ujihara	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Toshimitsu, Shion	SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate
Tournier, Dominique	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Trimby, Pat	Characterisation of Silicon Carbide surfaces prepared by PPDE
Trotta, Antonio	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Troutot, Nicolas	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Trovato, Gabriele	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations 250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances. Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Trupke, Michael	Vanadium in SiC: the spin for telecom quantum networks (invited paper) Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Tsuchida, Hidekazu	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers High-energy ion channeling for deep implantation of Al into 4H-SiC Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Tsuchida, Hidekazu	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
Tsui, Bing Yue	Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
Tsuji, Takashi	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Tsuruta, Kazuhiro	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Tsutsumi, Masayuki	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager
Turcaud, Jeremy	Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Turchetti, Loïc	Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface
Turner, Bryan	Advanced Carbon film for high-voltage power, high-performance SiC devices
Turner, Kelly	Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC
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Uchida, Hidetsugu	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Uchida, Tomoyuki	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
Udrea, Florin	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Udvarhelyi, Péter	Carbon cluster emitters in silicon carbide
Uehigashi, Hideyuki	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Ujihara, Toru	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Ujihara, Tour	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Ul-Hassan, Jawad	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers Dual configuration of shallow acceptor levels in 4H-SiC Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Umeda, Takahide	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation
Umeda, Takahide	Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
Umezawa, Hitoshi	First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
Umezawa, Hitoshi	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching
Uomoto, Miyuki	Atomic Diffusion Bonding using nitride films and oxide films
Urciuoli, Damian	Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Urresti Ibanez, Jesus	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
Usikov, Aleksandr	Monitoring of graphene properties in the process of viral biosensor manufacturing
Usseglio Nanot, Sandro	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules
Usureau, Elise	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
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Vabres, Roberto	Formation of Ti ohmic contact on p-SiC by laser annealing
Vadebout, Thomas	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors
Van Brunt, Edward	UIS ruggedness of parallel 4H-SiC MOSFETs Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations (invited paper)
Van Cuong, Vuong	500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment. High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
van der Wal, Caspar	Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide
Van Zeghbroeck, Bart	Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD
Varghese, Binni	High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC)
Vasilevskiy, Konstantin	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Vasin, Andrey	Monitoring of graphene properties in the process of viral biosensor manufacturing
Vavasour, Oliver James	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability
Vaxelaire, Nicolas	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Veliadis, Victor	Accelerating SiC Mass Commercialization
Vemolova, Hana	Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Vergne, Bertrand	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Verleye, Stefaan	Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Verna, Adriano	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
Vidarsson, Arnar M.	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Vignati, Anna	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Vinciguerra, Vincenzo	A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
Vines, Lasse	Dual configuration of shallow acceptor levels in 4H-SiC Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide Charge carrier capture from prominent defect centers in 4H-SiC
Vinodh, Senthil	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
Vivien, Laurent	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
Vivona, Marilena	Stacking faults and space charge limited current in 4H-SiC Schottky diodes Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Vivona, Marilena	Formation of Ti ohmic contact on p-SiC by laser annealing
Vlachakis, Basil	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
Voo, Roth	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) Atom probe tomography characterization of SiO2/4H-SiC interface The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC SmartSiCTM Substrates: A Boon to Drain Metallization Process
Voznyi, Andrii	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Vudumula, Pavan	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
Vudumula, Pavan	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) SmartSiCTM Substrates: A Boon to Drain Metallization Process
Vuillermet, Enora	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
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Wahid, Shan	A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
Walker, Marc	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability
Walsh, Nathaniel	650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Wang, Chia-Hua	Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
Wang, Fengshou	Advanced Carbon film for high-voltage power, high-performance SiC devices
Wang, Qian	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Wang, Ruixuan	Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Watanabe, Heiji	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques A SiO2/SiC interface formed by direct bonding of SiO2 and SiC Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
Watanabe, Naoki	Development of silicide formation process on p-type SiC by laser annealing
Watt, Caroline	Total SiC Polishing Process Optimization for Cost of Ownership
Weber, Heiko	Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing Photoluminescence polarization of single TS centers in 4H-SiC
Weger, Magdalena	Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
Wehrle, Moritz	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs
Wei, Xiaoguang	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Weingärtner, Roland	Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth
Weishaupt, Stefan	Trace element analysis of purified graphite material
Wellmann, Peter	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules Physical Vapor Deposition of a-SiC thin films for optical applications
Wen, Yi	A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate
White, Daniel	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
White, Samuel	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Whiteley, Samuel J.	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Whitworth, Andrew	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Widiez, Julie	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Willers, Helge	Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
Wilson, Bradley	Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Wilson, Jennifer	High-temperature α-spectroscopy with 4H-SiC based sensors
Wilson, Marshall	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Wimmer, Paul	Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth
Wirths, Stephan	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Wischmeyer, Franck	SiC epi fabrication – 150 & 200 mm G10-SiC epitaxy platform
Wolter, Dirk	Trace element analysis of purified graphite material
Wood, Graham	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
Wood, Sebastian	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Wu, Jun	A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC
Wu, Peifei	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Wu, Ping	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates
Wu, Ruei-Ci	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures
Wörnle, Raphael	Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing
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Xin, Liu	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Xu, Jun	Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
Xu, Xueping	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
Xu, Yunwei	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Xu, Zongwei	High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
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Yajima, Masayoshi	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
Yakut, Merve	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Yamada, Hisashi	Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices
Yamada, Jumpei	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Yamaguchi, Daiki	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Yamamoto, Masayuki	Comparison of Si CMOS and SiC CMOS Operational Amplifiers
Yamauchi, Kazuto	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
Yamauchi, Kazuto	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Yamazaki, Yuichi	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Yang, Chang Hyeon	Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Yang, Dae	Advanced Carbon film for high-voltage power, high-performance SiC devices
Yang, Fei	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Yang, In-Seok	Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
Yang, Jiao	Advanced Carbon film for high-voltage power, high-performance SiC devices
Yang, Jinghe	Advanced Carbon film for high-voltage power, high-performance SiC devices
Yang, Peng	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Yang, Zhengyu	Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
Yano, Hiroshi	Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)
Yao, Atsushi	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Yasunami, Takuma	Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Yasunami, Takuma	Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC
Yeats, Andrew	Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Yen, Cheng-Tyng	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
Yen, Chih-Hung	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Yeo, Abdul Hannan	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) Atom probe tomography characterization of SiO2/4H-SiC interface The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC SmartSiCTM Substrates: A Boon to Drain Metallization Process
Yonezawa, Yoshiyuki	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC
Yoon, Hyowon	Analysis of TID effects through gamma-ray irradiation experiments
Yoon, Young Jun	Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
Yoshida, Sadafumi	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Yoshikawa, Masanobu	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Yoshikawa, Takeshi	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper)
Yoshioka, Hironori	Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field Determination of SiC MOS interface roughness from TEM image by using machine learning
Young, Liam	Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals
Young, Robert	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
Yu, Zhe	Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
Yu, Zhiyong	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Yuan, Hao	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Yuan, Zimo	Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Yun, Seung Bok	Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
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Zanetti, Edoardo	Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods Unclamped inductive switching response of SiC MOSFETs under extreme slow transient TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Zanoni, Enrico	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
Zekentes, Konstantinos	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
Zelazko, Jaroslaw	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
Zellner, Christopher	High-temperature reorganization behavior of porous 4H-SiC thin foils
Zeng, Guang	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes
Zeng, Hongyu	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
Zetterling, Carl-Mikael	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
Zeuner, Michael	Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
Zhang, Bo	Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
Zhang, Luyang	Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs
Zhang, Qintao	Advanced Carbon film for high-voltage power, high-performance SiC devices
Zhang, Yuming	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Zhang, Yun	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Zhao, Charisse	Advanced Carbon film for high-voltage power, high-performance SiC devices
Zhao, Qingda	Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation
Zhao, Shuchun	Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Zhao, Zhibin	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
Zheng, Yi	Advanced Carbon film for high-voltage power, high-performance SiC devices
Zhong, Kailun	New Generation SiC MPS Diodes with Low Schottky Barrier Height
Zhou, Huiqin	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Zhou, Renjie	Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
Zhou, Tao	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Zhou, Yu	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Zhu, Can	Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Zielinski, Marcin	Characterization of very thin 3C-SiC epilayers on Si Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon Free-standing 3C-SiC p-type doping by Al ion implantation Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Zielinski, Marcin	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Zignale, Marco	Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster) Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Zimina, Daria	Effect of the Source Composition on PVT SiC in Graphite and TaC Coated Crucibles Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma
Zolnai, Zsolt	Comparative optical metrologies of implanted SiC wafers
Zong, Yuan	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Zou, Wei	Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices
Zumbo, Luca	Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Zwieback, Ilya	Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates