ABSTRACT. Since the commercialization of the first SiC SBD in the early 2000s and the first SiC MOSFET in early 2010, many researchers have made an effort to improve SiC Diode and MOSFET performance continuously. And the growth of electric vehicles in early of 2020s became a catalyst for the popularization of SiC power semicondutors. Even though early SiC products had several challenges in device quality and manufacturability, these issues have been resolved rapidly. As a result, SiC device is becoming the strong competitor of Si IGBTs, MOSFETs & FRDs in the power semiconductor market for voltage ratings above 650V. Many reseachers is considering how to cost-effectively replace Si with SiC.
Two key drivers can be dicussed. One is manufacturing of SiC power semiconductors to use 200mm SiC wafers and other is FoM(Figure of Merit) improvement of SiC Diode and MOSFETs.
SiC power semiconductor manufacturing is largely based on 150 mm substrates so far and an impressive achievement in the device performance was made. But 200mm substrates to allow cost reduction is inevitable now. onsemi has made large investments in Bucheon, Korea to satisfy these needs. An update in 200mm SiC MOSFET manufacturing is discussed in the presentation.
Many manufacturers in SiC power semiconductors have made an effort to improve FoM (Figure of Merit) of their Diodes and MOSFETs. onsemi’s latest technology has focused on this.
onsemi is investigating new diode technology of JFET diode structure to emphasize lowest total capacitive charge(Qc), which has big benefit to reduce switching loss in diode application.
In the presentation of onsemi’s effort on SiC, trench MOSFET technology which is optimized in EV application is discussed. This technology ensures long-term performance by minimizing electric field in the trench bottom with the new deep P structure and lowest Rsp with narrow cell pitch design.
In the road to go to trench technology, new planar MOSFET technology will be discussed, which is optimized in EV application as well. onsemi has focused on low Rsp value and immunity on parasitic turn-on with planar technology.
These three technologies will be discussed in the presentation.
