Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)

Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices

High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC)

Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability

Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition

Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper)

Characterisation of Silicon Carbide surfaces prepared by PPDE

Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach

Hydrogen etching process of 4H-SiC (0001) in limited regions

Characterization of very thin 3C-SiC epilayers on Si

Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs

On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs

UIS ruggedness of parallel 4H-SiC MOSFETs

Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications

Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes

Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena

Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC

Stacking faults and space charge limited current in 4H-SiC Schottky diodes

Non-Destructive Characterization of Buried Damage in SiC Substrates". No mater how good bulk SiC substrates and epi processes are, proper polishing/CMP and characterization of the surface and subsurface damage are critical for device yield and reliability (invited paper)

Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation

Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field

Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations (invited paper)

Unique Failure Mode of SiC MOSFETs under Accelerated HTRB

3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation

Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors

OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC

Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution

Photoluminescence polarization of single TS centers in 4H-SiC

Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties

Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET

Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness

Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode

Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope

Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC

Comparison of Si CMOS and SiC CMOS Operational Amplifiers

Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment.

Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs

Amorphous silicon-carbide modulator based on the thermo-optic effect

Modeling the charging of gate oxide under high electric field

Implicit differentiable models for wide temperature range SiC Schottky diode characterization

AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs

Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology

Unclamped inductive switching response of SiC MOSFETs under extreme slow transient

Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes

500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs

Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager

Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures

Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures

Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure

Impact of Al ion implantation on 4H-SiC epitaxial layer

Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts

Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC

Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques

Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping

High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser

A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer

Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C

Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs

Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC

A comparison between different post grinding processes on 4H-SiC wafers

Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy

A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers

Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS

Ga2O3/SiC Heterostructure Schottky Diodes

Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices

Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates

Investigation of dislocation behaviors in 4H-SiC under thermal treatment

DFT modeling of crystallographic defects in SiC polytypes

Characterization of Growth Sectors in Gallium Nitride Substrate Wafers

Systematic tracking of defects from substrate to final device by full wafer mapping techniques

Dependence of the silicon carbide radiation resistance on the irradiation temperature.

Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.

Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates

An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices

Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.

Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs

The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors