Program for Thursday, September 21st: Talk View

PROGRAM FOR THURSDAY, SEPTEMBER 21ST: TALK VIEW

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8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

19:00

19:30

20:00

20:30

21:00

21:30

22:00

22:30

23:00

08:30-09:00

Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited

L. Huang, Y. Liu, X. Peng, T. Tsuji, Y. Onozawa, N. Fujishima, J. Sin

09:00-09:20

Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices

Voznyi, Ivanova, Söderlund, Perros, Rabinzohn, Beyer, Schmid, Heitmann

09:20-09:40

High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800

Chand et.al

09:40-10:00

Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide

Renz et.al

10:00-10:20

Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer

Roccaforte et.al

08:30-09:00

Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper)

Myers-Ward, Mahadik, Liao, Foster, White, Hajzus, Pennachio, Koehler

09:00-09:20

Characterisation of Silicon Carbide surfaces prepared by PPDE

Newton, Mazzamuto, Spasevski, Haspel, Trimby, Mulcahy, Moffat, Lea, Dieing

09:20-09:40

Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach

G. Ferro, Y. Jousseaume, P. Kumar, M.E. Bathen, F. Cauwet, U. Grossner

09:40-10:00

Hydrogen etching process of 4H-SiC (0001) in limited regions

A.S. Mancuso, S. Boninelli, M. Camarda, L. Calcagno, F. La Via

10:00-10:20

Characterization of very thin 3C-SiC epilayers on Si

Marcin Zielinski, Marc Bussel, Marc Portail, Adrien Michon, Yvon Cordier

10:30-11:00 Coffee Break

11:00-11:20

Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power

Jeff Kim, Brian Fetzer, Brett Hull, Sei-Hyung Ryu

11:20-11:40

On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs

Jaume Roig, Sara Kochoska, Basil Vlachakis, Jimmy Franchi, Thanh-Toan Pham

11:40-12:00

UIS ruggedness of parallel 4H-SiC MOSFETs

Steinmann, Atzeri, Ji, Langan, Myers, Oldham, Potera, Rinderer, Van Brunt

12:00-12:20

Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space

V. Kotagama, A. Renz, P. Gammon, V. Kilchytska, D. Flandre, M. Antoniou, V. Shah

11:00-11:20

Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes

M. Takayasu, T. Matsuoka, M. Hara, M. Kaneko, T. Kimoto

11:20-11:40

Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling

Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto

11:40-12:00

Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC

K. Kuwahara, T. Kitawaki, M. Hara, M. Kaneko, T. Kimoto

12:00-12:20

Stacking faults and space charge limited current in 4H-SiC Schottky diodes

M. Vivona, P. Fiorenza, V. Scuderi, F. La Via, F. Giannazzo, F. Roccaforte

12:30-14:00 Lunch

14:00-14:50

Non-Destructive Characterization of Buried Damage in SiC Substrates". No mater how good bulk SiC substrates and epi processes are, proper polishing/CMP and characterization of the surface and subsurface damage are critical for device yield and reliability (invited

Tadaaki Kaneko

14:50-15:10

Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation

Kumar, Martins, Goncalves, Ammann, Prokscha, Bathen, Grossner

15:10-15:30

Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric

Hironori Yoshioka, Jun-Ichi Iwata, Yu-ichiro Matsushita

15:30-15:50

Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers

Louise Lilja, Misagh Ghezellou, Jawad Ul-Hassan, Peder Bergman

14:00-14:30

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations (invited

Edward Van Brunt

14:30-14:50

Unique Failure Mode of SiC MOSFETs under Accelerated HTRB

P. Moens, M. Domeij, J.F. Cano, L. De Schepper, S. Verleye, F. Allerstam

14:50-15:10

3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes

M. Alaluss, C. Böhm, C. Herrmann, T. Basler, R. Elpelt, G. Zeng

15:10-15:30

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced

Michael Hanf, Felix Hoffmann, Jan-Hendrik Peters, Sven Clausner, Nando Kaminski

16:00-16:30 Coffee Break

16:30-18:30

Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect

C. Cochrane, A. Gottscholl, H. Kraus, T. Aichinger, J. Hilsenbeck

OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space

A. Gottscholl, C. Cochrane, D. Fehr, M. Flatté, T. Ohshima, H. Kraus

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC

I.G. Ivanov, D. Shafizadeh, J. Davidsson, T. Ohshima, I.A. Abrikosov, N.T. Son

Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous

Bonato et.al

Photoluminescence polarization of single TS centers in 4H-SiC

Johannes Lehmeyer, Heiko Weber, Michael Krieger

Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical

Onishi, Nakanuma, Tahara, Kutsuki, Shimura, Watanabe, Kobayashi

16:30-18:30

Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET

S. Rathi, D. Macdonald, A. Murphy, M. Bell, R. Young, D. Clark

Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness

S. Nomoto, M. Masunaga, R. Kuwana, K. Shimizu, T. Nagai, K. Hirano

Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode

Yunyi Qi, Marina Antoniou, Peter Gammon

Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman

Yoshikawa, Murakami, Uchida, Sameshima, Mitsuzawa, Matoba, Lim, Rusch, Rommel

Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC

Koji Nakayama, Yoshiyuki Yonezawa

Comparison of Si CMOS and SiC CMOS Operational Amplifiers

Ryosuke Kobayashi, Masayuki Yamamoto

Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment.

Ozaki, Van Cuong, Takeyama, Ohshima, Kojima, Tanaka, Kuroki

Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs

Mitsuaki Kaneko, Noriyuki Maeda, Tsunenobu Kimoto

Amorphous silicon-carbide modulator based on the thermo-optic effect

Mallemace, Lu, Shi, Chaussende, Tabouret, Rao, Ou, Della Corte

Modeling the charging of gate oxide under high electric field

Dick Scholten, Jens Baringhaus

Implicit differentiable models for wide temperature range SiC Schottky diode characterization

G. Pristavu, D.-T. Oneata, R. Pascu, F. Draghici, G. Brezeanu

AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs

R. Coq Germanicus, T. Phulpin, K. Niskanen, A. Michez, U. Lüders

Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device

Norman Boettcher, Tobias Erlbacher

Unclamped inductive switching response of SiC MOSFETs under extreme slow transient

M. Pulvirenti, L. Salvo, A.G. Sciacca, E. Zanetti, N. Bentivegna, M.G. Saggio

Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes

Momeni, Mazzillo, Laha, Abd Sani, Urresti Ibanez, Dai, Liguda, Habenicht

500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs

S. Hiramoto, V. Van Cuong, S. Ishikawa, H. Sezaki, T. Maeda, S.-I. Kuroki

Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager

T. Meguro, M. Tsutsumi, A. Takeyama, T. Ohshima, Y. Tanaka, S.-I. Kuroki

Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate

P. Vudumula, U. Chand, L.K. Bera, C.H.M. Chua, N. Singh, S. Chung

16:30-18:30

Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different

Wan-Ting Hsieh, Kung-Yen Lee, Ruei-Ci Wu, Pei-Chun Liao, Chih-Jung Chang

Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask

Oleg Rusch, Kevin Brueckner, Tobias Erlbacher

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated

Chen, Liu, Cheng, Hu, Raghothamachar, Ghandi, Kennerly, Carlson, Steski, Dudley

Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside

Tom Becker, Carsten Hellinger, Alesa Fuchs, Oleg Rusch, Julien Koerfer

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

Srihari Rajgopal, David Spry, Dorothy Lukco, Philip Neudeck

Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base

Moon, Seo, Kang, Kim, Yun, Kang, Yang, Kim, Kim, Bahng

Impact of Al ion implantation on 4H-SiC epitaxial layer

C. Calabretta, N. Piluso, C. Bongiorno, S. Boninelli, F. La Via, A. Severino

Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts

Mazzillo, Momeni, Yu, Stache, Urresti Ibanez, Liguda, Habenicht

Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC

Julien Koerfer, Mathias Rommel, Alesa Fuchs, Oleg Rusch

Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related

R. Kondo, H. Zeng, M. Sometani, H. Hirai, H. Watanabe, T. Umeda

Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser

Iwaizumi, Yasunami, Katayama, Kakimoto, Nakamura, Goto, Ikenoue

High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser

Zongwei Xu, Dong Bing

A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer

Shan Wahid, Markus Leitgeb, Georg Pfusterschmied, Ulrich Schmid

Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500

Alexander May, Leander Baier, Mathias Rommel

Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion

Chen, Yen, Hung, Kuo, Kuo, Liang, Chang

Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC

Kevin Brueckner, Oleg Rusch

A comparison between different post grinding processes on 4H-SiC wafers

Brunella Cafra, Agata Grasso, Nicolo Piluso, Andrea Severino

Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared

Aseem Srivastava, Jeremy Turcaud, Benoit Ravot, Euisang Song

A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko

V. Vinciguerra, G.L. Malgioglio, A. Landi, S. Rascunà, M. Renna

16:30-18:30

Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without

Masashi Kato, Ayato Ogawa, Lei Han, Tomohisa Kato

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

Vidarsson et.al

Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS

S. Ogawa, T. Becker, J. Foerthner, S. Akahori, H. Sako, M. Rommel, M. Yoshikawa

Ga2O3/SiC Heterostructure Schottky Diodes

Kim, Lee, Shin, Maimon, Hendricks, Moser, Pookpanratana, Li, Koo

Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices

K. Kobayashi, Y. Mori, K. Konishi, M. Hasegawa, K. Kobayashi, A. Shima

Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates

Liao, Mahadik, Stahlbush, Burk, Chakrabarti, Zwieback, Xu, Rengarajan

Investigation of dislocation behaviors in 4H-SiC under thermal treatment

H. Peng, Y. Gao, S. Zhao, C. Zhu, C. Gao, Z. Chen, B. Raghothamachar, M. Dudley

DFT modeling of crystallographic defects in SiC polytypes

Zahra Rajabzadeh, Celine Halkali, Rene Hammer, Lorenz Romaner

Characterization of Growth Sectors in Gallium Nitride Substrate Wafers

Y. Liu, S. Hu, Z. Chen, Q. Cheng, B. Raghothamachar, M. Dudley

Systematic tracking of defects from substrate to final device by full wafer mapping techniques

Birkoben, Faisal, Steller, Kranert, Karhu, Kallinger, Müller, Habenicht

Dependence of the silicon carbide radiation resistance on the irradiation temperature.

A. Lebedev, V. Kozlovski, M. Levinshtein, K. Davydovskaya, R. Kuzmin

Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.

J. Thörnberg, G. Polisski, E. Carria, M. Isacson, B. Magnusson

Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates

Boninelli, Celano, Cannizzaro, Zielinski, Mancarella, Scuderi, La Via

An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar

Cao, Renz, Shah, Lophitis, Niewelt, Lloyd-Hughes, Antoniou, Mawby, Gammon

Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress

Yasutaka Matsubara, Kenta Murayama, Shunta Harada

Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC

N. Mahadik, M. Liao, M. Mastro, E. Kallon, R. Stahlbush, J. Soto, B. Odekirk

The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors

Goncalves de Medeiros et.al

19:30-23:00 Gala Dinner