Program for Wednesday, September 20th: Talk View

PROGRAM FOR WEDNESDAY, SEPTEMBER 20TH: TALK VIEW

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8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:30-09:00

Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited

Yonezawa et.al

09:00-09:20

Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes

Satoshi Asada, Koichi Murata, Hidekazu Tsuchida

09:20-09:40

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs

Kawahara et.al

09:40-10:00

The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing

A. Metreveli, A. Hallén, I. Disarcina, A. Cemmi, A. Verna, C.-M. Zetterling

10:00-10:20

Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC

Shunya Shibata, Taiga Matsuoka, Mitsuaki Kaneko, Tsunenobu Kimoto

08:30-09:00

High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited

Bernd Thomas, Daniel Baierhofer, Frank Staiger, Christian Bierhoff

09:00-09:20

Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates.

Ruggero Anzalone, Domenica Raciti, Andrea Severino

09:20-09:40

Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial

F. Fujie, K. Murata, T. Shiono, N. Ishibashi, Y. Mabuchi, H. Tsuchida

09:40-10:00

The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices

Shah et.al

10:00-10:20

Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and

Misagh Ghezellou, Jawad Ul-Hassan

10:30-11:00 Coffee Break

11:00-11:20

Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing

Opprecht et.al

11:20-11:40

Formation of Ti ohmic contact on p-SiC by laser annealing

Bellocchi et.al

11:40-12:00

Nickel ohmic contacts formed on 4H-SiC by UV laser annealing

Jean-François Michaud, Clément Berger, Daniel Alquier

12:00-12:20

Proposal of damage-free SiC wafer dicing using water jet guided laser

S. Kadoya, S. Takahashi, M. Michihata, N. Ohtani, K. Abe, S. Arimura

11:00-11:30

Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper)

Meneghini et.al

11:30-11:50

Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power

A. Biswas, D. Lichtenwalner, S. Das, C. Isaacson, S. Ganguly, D. Gajewski

11:50-12:10

Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent

Marcuzzi, Avramenko, De Santi, Geenen, Moens, Meneghesso, Zanoni, Meneghini

12:10-12:30

Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates

Uchida, Kobayashi, Hatta, Ishikawa, Ozono, Masumoto, Kurihara, Harada, Kojima

12:30-14:00 Lunch

14:00-14:30

Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited

Masashi Kato, Shunta Harada, Hitoshi Sakane

14:30-14:50

Processing and electrical characterization of SiC-on-Insulator structures

Gelineau et.al

14:50-15:10

High-energy ion channeling for deep implantation of Al into 4H-SiC

Belanche Guadas et.al

15:10-15:30

Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser

Mazzamuto et.al

15:30-15:50

Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method

Masashi Kato, Takumi Maruhashi, Hisaya Sato, Yoshiyuki Yonezawa

14:00-14:30

Silicon carbide based optical frequency comb (invited paper)

Haiyan Ou

14:30-14:50

Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon

Bekker et.al

14:50-15:10

Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC

White, Lekavicius, Carter, Pennachio, Hajzus, Purdy, Yeats, Myers-Ward

15:10-15:30

Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient

N. Morioka, T. Nishikawa, H. Abe, H. Morishita, T. Ohshima, N. Mizuochi

15:30-15:50

Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit

Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

16:00-16:30 Coffee Break

16:30-18:30

Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature

Dominique Tournier, Pascal Bevilacqua, Thomas Vadebout, Jean-François De Palma

Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared

Borghese, Angora, Boccarossa, Riccio, Maresca, Breglio, Irace

Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses

Christian Schwabe, Niklas Seltner, Josef Lutz, Thomas Basler

High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power

Yao, Okamoto, Kato, Hozoji, Sato, Yamaguchi, Ando, Harada, Sato

Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs

Corinna Martinella, Marianne Bathen, Augustinas Galeckas, Ulrike Grossner

Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias

Boldyrjew-Mast, Heimler, Liu, Reiter, Schwabe, Thönelt, Lutz, Basler

A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter

Mitsuaki Kaneko, Taiga Matsuoka, Tsunenobu Kimoto

Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs

Aivars Lelis, Ronald Green, Daniel Habersat, Damian Urciuoli, Erik Schroen

Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power

M. Nagel, I. Kovacevic-Badstuebner, S. Race, D. Romano, G. Antonini, U. Grossner

Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board

Neudeck, Chen, Greer, Spry, Prokop, Lukco, Krasowski, Hunter

Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs

Kagoshima et.al

250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector

Meli et.al

Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray

E. Medina, E. Sangregorio, L. Calcagno, S. Kalbfleisch, A. Vignati, M. Camarda

Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations

Medina et.al

Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS

Takahashi et.al

16:30-18:00

Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier

Y.-H. Cho, S.-H. Chung, J.-S. Choi, T.-H. Lee, S.-Y. Moon, H.-J. Lee, S.-M. Koo

Understanding the Material Loss in the Laser Based SiC Wafer

Martin Mikula, Petr Kostelnik, Mojmir Komora, Tomas Prymus, Josef Humlicek

Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated

Schuck-Buehner, Friedel, Lang, Reimann, Friedrich, Mützenich, Kornmeyer

SmartSiCTM Substrates: A Boon to Drain Metallization Process

Cakmak et.al

Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD

F. Cauwet, Y. Benamra, L. Auvray, J. Andrieux, G. Ferro

Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method

Jeong, Kim, Park, Sun, Shin, Bae, Lee, Yang, Kim, Jang, Lee

Effects of Solution Properties on Growth Conditions of SiC Solution Growth

J. Li, Z. Huiqin, L. Xin, K. Kentaro, H. Shunta, T. Miho, U. Toru

GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT

Calabretta, Piluso, Chauveau, Roy, Iatosti, La Via, Severino

Physical Vapor Deposition of a-SiC thin films for optical applications

Chaussende et.al

3C-SiC on Si substrates through transformation of Si and C multilayers

Sudhahar, Duboiskaya, Döll, Reiprich, Scheler, Shekhawat, Pezoldt

A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H

Tawhid Rana, Jun Wu, Vladimir Pushkarev, Ian Manning

Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C

Gabriel Ferro, Davy Carole, Didier Chaussende

Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic

Daichi Dojima, Kaito Tayake, Koki Shigematsu, Kohei Toda, Tadaaki Kaneko

16:30-18:30

Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type

Park, Lim, Kang, Shin, Park, Han, Kang, Kim, Shin

A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET

Jui-Tse Hsiao, Chia-Lung Hung, Yi-Kai Hsiao, Bing-Yue Tsui

Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC

Carsten Hellinger, Mathias Rommel, Anton J. Bauer

Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks

Y. Sano, Y. Nakanishi, M. Oshima, S. Iden, J. Yamada, D. Toh, K. Yamauchi

Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing

André Hochreiter, Fabian Groß, Michael Krieger, Heiko B. Weber

Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence

Carsten Hellinger, Mathias Rommel, Anton J. Bauer

Reduction of the SiC trench sidewalls striations.

Dario Tenaglia, Massimo Davide Pirnaci

Carbon control method in SIC MOSFET with Chlorine and Vth stability

Chungjung Kim, Daeeun An, Jimin Lee, Chul Choi

Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films

Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu

Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics

Y. Lu, X. Shi, A.A. Afridi, V. Tabouret, D. Chaussende, K. Rottwitt, H. Ou

Free-standing 3C-SiC p-type doping by Al ion implantation

Canino, Torregrosa, Zielinski, Boldrini, Bidini, Russo, Maccagni, La Via

High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit

V. Van Cuong, T. Meguro, S. Ishikawa, H. Sezaki, T. Maeda, S.-I. Kuroki

Transient-enhanced diffusion of implanted aluminum in 4H-SiC

Kristijan Luka Mletschnig, Paweł Michałowski, Peter Pichler

Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide

S. Das, D.J. Lichtenwalner, H. Dixit, S. Rogers, A. Scholze, S.-H. Ryu

High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical

Daisetsu Toh, Kiyoto Kayao, Kazuto Yamauchi, Yasuhisa Sano

A SiO2/SiC interface formed by direct bonding of SiO2 and SiC

Shinji Kamihata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems

Marco Pieruccini, Virginia Boldrini, Antonella Parisini

TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses

Fiorenza et.al

Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium

Kiyoto Kayao, Daisetsu Toh, Kazuto Yamauchi, Yasuhisa Sano

16:30-18:30

Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier

Ryoya Ishikawa, Mitsuaki Kaneko, Tsunenobu Kimoto

Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals

Hu et.al

Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate

M. Goller, J. Lutz, G. Curatola, S. Mouhoubi, T. Basler, J. Franke

Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers

Koutsourakis, Siebenkotten, Thompson, Blakesley, Castro, Kästner, Wood

Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging

Takuya Morita, Yohsuke Matsushita, Yasuyuki Igarashi, Kazumi Takano

Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD

Lee, Kim, Park, Choi, Lee, Chung, Moon, Lee, Cho, Bae, Koo

Charge carrier capture from prominent defect centers in 4H-SiC

Orazio Samperi, Lasse Vines, Anders Hallén, Maria Elena Fragalà

Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial

Domenico Mello, Emiliano Burresi, Leander Tapfer, Andrea Severino

Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray

Junji Senzaki, Junichi Nishino, Tsutomu Osanai

Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer

Kazumi Takano, Takuya Morita, Yohsuke Matsushita, Yasuyuki Igarashi

Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC

Celine Halkali, Zahra Rajabzadeh, Lorenz Romaner

Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations

Yuki Ohuchi, Hidenori Saeki, Hiroki Sakakima, Satoshi Izumi

On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on

H. Schlichting, T. Becker, T. Erlbacher, L. Baier, M. Kocher, M. Rommel

Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques

Robin Karhu, Kevin Albrecht, Gennadi Polisski, Marshall Wilson, Birgit Kallinger

In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy

Thomas Clausen, Nadine Schüler, Kay Dornich

Monitoring of graphene properties in the process of viral biosensor manufacturing

Lebedev et.al

Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers

Badalà et.al