ICSCRM 2023: INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIAL 2023

This page contains an index consisting of author-provided keywords.

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(000−1) surface	Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
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- 4H SiC	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
- scanning tunneling luminescence microscopy	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
- step-bunched	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
- sub-gap electroluminescence	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
- surface defects	Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces
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1.2 kV	Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
1.2 kV 4H-SiC MOSFET	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
1.2kV SiC MOSFETs	1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
150mm	4H-SiC substrates using the Fast Sublimation Growth Process
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200mm	4H-SiC substrates using the Fast Sublimation Growth Process
200mm 4H-SiC	Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
200mm SiC	Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy
2D electron gas	First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
2D Material	Novel Graphene and SiC Epitaxy to Enable Film Transfer
2D materials	2D materials integration on silicon carbide: a root beyond power electronics Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
2D SiC	The Rise of 2D SiC Semiconductors
2D simulations	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
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3-dimensional observation	3-dimensional observation of dislocations in 4H-SiC using focused light birefringence
3.3 kV SiC VDMOSFET	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
3.3kV	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs
3.3kV MOSFET robustness to BPD faulting	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
3.3kV SiC MOSFET	Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode
3C SiC	Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
3C-SiC	Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon Free-standing 3C-SiC p-type doping by Al ion implantation Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
3C-SiC micro-structures	Stress fields distribution and simulation in 3C-SiC resonators.
3D simulation	Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses
3rd quadrant	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET
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4-H SiC	4H-SiC substrates using the Fast Sublimation Growth Process
4H	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
4H SiC	Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
4H silicon carbide	High-energy ion channeling for deep implantation of Al into 4H-SiC
4H- Silicon Carbide	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
4H-SiC	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper) Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates. Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method Nickel ohmic contacts formed on 4H-SiC by UV laser annealing Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer Dual configuration of shallow acceptor levels in 4H-SiC High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping 500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment. Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC Transient-enhanced diffusion of implanted aluminum in 4H-SiC High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers Charge carrier capture from prominent defect centers in 4H-SiC Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors Advanced Carbon film for high-voltage power, high-performance SiC devices New Generation SiC MPS Diodes with Low Schottky Barrier Height Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
4H-SiC BJT	Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs
4H-SiC epitaxial layer characterization	In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy (HR-SPS)
4H-SiC MOSFET	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses
4H-SiC Power MOSFETs	Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs
4H-SiC Taiko Wafers	A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
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650V	650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
6H-SiC	Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment
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8 inch substrate	Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates.
8-inch SiC	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
800°C SiC MOSFET characterization	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
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a-face	Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
a-SiCOI	Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications
ab initio theory	Optical ionization of qubits and their silent charge states
Accelarated testing	Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Accelerated Tests	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs
Accelerated wafer-level BVR reliability test	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
Acquisition	Rapid industrialization of SiC trench technologies
Activation	Screen UV Laser Anneal Technology for next generation of SiC Devices Centrotherm High Temperature Annealing and Oxidation Furnaces
Activation energy	Hydrogen etching process of 4H-SiC (0001) in limited regions
Adhesion	Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
Advanced power cycling	Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses
aerospace	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications Analysis of TID effects through gamma-ray irradiation experiments
AFM	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
AI	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
air pocket design	The role of air-pocket in crucible structure for high quality SiC crystal growth
Al	Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry
Al implantation	Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Al ion implantation	Impact of Al ion implantation on 4H-SiC epitaxial layer
Al+ implantation	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC
Al2O3	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Al2O3/LaAlO3/SiO2	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
ALD	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
AlGaN	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
AlN	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
alpaha particles	High-temperature α-spectroscopy with 4H-SiC based sensors
Alpha particle	Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Aluminium Gallium Oxide	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes
aluminum	High-energy ion channeling for deep implantation of Al into 4H-SiC Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Aluminum doping	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing Free-standing 3C-SiC p-type doping by Al ion implantation
aluminum implantation	Transient-enhanced diffusion of implanted aluminum in 4H-SiC
Ammonothermal	Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
amorphous Si	Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films
amorphous SiC	Physical Vapor Deposition of a-SiC thin films for optical applications
Amorphous silicon carbide	Amorphous silicon-carbide modulator based on the thermo-optic effect
amplifier	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Analytical Modelling	Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology
Annealing	High-temperature reorganization behavior of porous 4H-SiC thin foils Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC Advanced Carbon film for high-voltage power, high-performance SiC devices Centrotherm High Temperature Annealing and Oxidation Furnaces
anode hole injection	Modeling the charging of gate oxide under high electric field
Anomalous Hall coefficient	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
ANSYS thermomechanical simulations	A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
Arcing	Testing challenges for latest SiC devices
Atomic Force Microscopy	Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties
Atomic Layer Deposition	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition
Atomic step structure	Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
atomic step velocity	Resistivity as a witness of local crystal growth conditions
atomically flat surface	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation
ATP Probe	Atom probe tomography characterization of SiO2/4H-SiC interface
automotive	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
avalanche	Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
Avalanche breakdown	Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Avalanche capability	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
B
back grinding	A comparison between different post grinding processes on 4H-SiC wafers
Backside contact	Development of silicide formation process on p-type SiC by laser annealing
Backside Ohmic contact	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Band-to-band-tunneling	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
basal plane dislocation	Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
Basal Plane Dislocation (BPD)	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion
beam position monitors	Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines
Beam shaping	High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser
beamline instrumentation	Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines
Bias-temperature instability	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Bidirectional Power Device	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
Bidirectional Switch	Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
bilayer dielectric	Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
binary-collision approximation	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
biomedical devices	Silicon Carbide Biotechnology There is more to SiC than power electronics!
biosensor	Monitoring of graphene properties in the process of viral biosensor manufacturing
biotechnology	Silicon Carbide Biotechnology There is more to SiC than power electronics!
bipolar AC stress	Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress
bipolar degradation	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper) Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
Bipolar Devices	Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes
Bipolar reliability	Development of silicide formation process on p-type SiC by laser annealing
Bipolar technology	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
birefringence	Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method 3-dimensional observation of dislocations in 4H-SiC using focused light birefringence
Birefringence imaging	Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
BMA cell	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
body diode	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET
body diode SiC MOSFETs	Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
bonded substrate	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Boron carbide	Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD
Bosch	Rapid industrialization of SiC trench technologies
Boule testing	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
BPD	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging Systematic tracking of defects from substrate to final device by full wafer mapping techniques Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
BPD free	4H-SiC substrates using the Fast Sublimation Growth Process
Breakdown Field	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
bright photon emission	Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing
buffer	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
buffer layer	Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Bulk crystal growth	Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
bulk growth	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper)
Bulk inclusion	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates
Burgers vector	Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
buried p+ layer	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Burn-in Screening	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion
byproduct	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
C
c-axis	Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes
C-V	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation
cantilever	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
Capacitance	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Capacitance curves	Frequency investigation of SiC MOSFETs C-V curves with biased Drain
Capacitance-Voltage	Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Capacitive charge	Normally-off 1200V Silicon Carbide JFET Diode with Low VF
Capacitive charge (Qc)	New Generation SiC MPS Diodes with Low Schottky Barrier Height
Capacitor	High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
capacity expansion	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
Capping	Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC
capture cross section	The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
carbon aggregates	Carbon cluster emitters in silicon carbide
carbon dioxide (CO2)	Thermal oxidation of 4H-SiC(0001) surface in a pure CO2 ambient
Carbon flux	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
carbon in oxide	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Carbon vacancy	Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Carbothermal reduction	Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment
carrier lifetime	Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper) Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
catalyst-referred etching	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
catalyzed chemical etching	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation
Cathodoluminescence	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
CC-DLTS	The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Cell pitch	Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs
CFD simulation	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
Channel length	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
Channel Mobility	Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
Channel resistance	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper) A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET Accuracy of Split C-V Characterization of SiC Power MOSFETs
Channeling	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design
channeling ion implantation	Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method
characterisation	Monitoring of graphene properties in the process of viral biosensor manufacturing
Characterization	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Charge carrier capture	Charge carrier capture from prominent defect centers in 4H-SiC
charge pumping	Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)
Charge transition levels	Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center
charge trapping and detrapping	Threshold voltage variation of SiC trench MOSFETs during TDDB stress
Charge-based wafer inspection	Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques
Chemical Mechanical Planarization	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Chemical mechanical polishing	A comparison between different post grinding processes on 4H-SiC wafers Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
Chemical mechanical polishing (CMP)	Answers to SiC wafer and device production challenges
chemical vapor deposition	Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC Enabling Next Generation WBG Semiconductors Using CVD Technology
Chloride-based chemistry	Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties
Chlorine oxidation	Carbon control method in SIC MOSFET with Chlorine and Vth stability
Circuit Board	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
Circuit Breaker	Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology
circuit model	Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics
Circuit Simulation	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation
Circular TLM	Free-standing 3C-SiC p-type doping by Al ion implantation
CJFET	Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter
cleaning	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
CMOS	Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2
CMOS Image Sensor	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors
CMOS Inverter	500°C Operation of 4H-SiC SRAM
CMOS technology	Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C
CMP	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes How process scaling offers maximum flexibility of SiC wafering along the complete process chain Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership Total SiC Polishing Process Optimization for Cost of Ownership HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution A Meister solution for optimized grinding of laser split silicon carbide surfaces Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
CMP process	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface Quality improvement of SiC substrate surface with using non-abrasive CMP slurry Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing
CO oxidation	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Co-60	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
CO2 oxidation	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
CO2-annealing	Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing
coating	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
coil position	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Color	Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C
Color centers	Silicon carbide as a host of color centers emitting at telecom bands Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center Optical ionization of qubits and their silent charge states Photoluminescence polarization of single TS centers in 4H-SiC Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide
Commercialization	Accelerating SiC Mass Commercialization
Compact modeling	A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
compensating center	Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates
compressed sensing	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Conductance	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Conductance method	The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Conduction Loss	650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Conduction Mechanism	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
confocal photoluminescence spectroscopy	Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
Constant current stress	TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses
Constant voltage stress	TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses
consumables	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
Contact	Screen UV Laser Anneal Technology for next generation of SiC Devices
contact resistance	Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
contamination	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Contraction	Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
Controlled spalling	A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
convolutional neural network	Determination of SiC MOS interface roughness from TEM image by using machine learning
Cooperativity	Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems
Corona	Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
Corona-Kelvin method	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects
Cost of Ownership	Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
cost reduction	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
Critical Regime	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
Critical stress time	Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress
critical temperature	UIS ruggedness of parallel 4H-SiC MOSFETs
Cryogenic	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
cryogenic temperatures	Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
Crystal damage and recovery	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
Crystal Defects	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates
Crystal growth	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment
Crystallization Behavior	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
Crystallographic defects	DFT modeling of crystallographic defects in SiC polytypes
Current sensor	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors
current spreading	Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes
Current Transport	Stacking faults and space charge limited current in 4H-SiC Schottky diodes
curvature	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers
CVD	Novel Graphene and SiC Epitaxy to Enable Film Transfer The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers Characterization of very thin 3C-SiC epilayers on Si
CVD Epitaxial growth	Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties
CVD-SIC block	Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
D
damage free	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation
damage-free dicing	Proposal of damage-free SiC wafer dicing using water jet guided laser
DCDC converter	Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography
deep implantation	High-energy ion channeling for deep implantation of Al into 4H-SiC
Deep Level Transient Spectroscopy	Charge carrier capture from prominent defect centers in 4H-SiC
deep level trap	Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation
Deep-Level Transient Spectroscopy	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Defect	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line Ga2O3/SiC Heterostructure Schottky Diodes
defect analysis	Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
defect characterization	Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS)
Defect curing	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
defect density	Design optimization of insulating materials for 4H-SiC crystal Ingot growth
defect engineering	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications
defect imaging	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
defect inspection	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Defect interaction in SiC	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations
Defect maps	Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques
Defect Mechanisms	Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
Defect recognition	In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy (HR-SPS)
defect reduction	A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC
Defect structure	Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals
defectivity	Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Defects	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements Characterisation of Silicon Carbide surfaces prepared by PPDE Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Combustion synthesis of SiC towards preparation of quantum sensors Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures
Defects from High Carrier Injection	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
degradation	Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
delamination	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
density functional theory	Carbon cluster emitters in silicon carbide Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC
Deposited Gate Oxide	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface
Depth profiling techniques	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Design	Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs
Design of Experiments	Total SiC Polishing Process Optimization for Cost of Ownership
Design optimization	Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
detector stability	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
deterministic divacancy synthesis	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
device characterization	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
Device fabrication	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing Accelerating SiC Mass Commercialization
Device Modeling	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation
Device packaging design for high temperature testing	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
device simulation	Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
devices	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Dewetting	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
DFT modeling	DFT modeling of crystallographic defects in SiC polytypes
Diamond	Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing
diamond size	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
dicing	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Dielectric Breakdown	High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
dielectric constant	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy
Dielectric stack	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
dielectrics	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Diffusion	Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design
Diffusion Barrier	Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC
Diode	Normally-off 1200V Silicon Carbide JFET Diode with Low VF A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
dipole scattering	A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs
Direct bonding of SiO2 and SiC	A SiO2/SiC interface formed by direct bonding of SiO2 and SiC
Directionality	Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
Dislocation	Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
Dislocation Density	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates
dislocation formation	Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal
dislocation loops	Impact of Al ion implantation on 4H-SiC epitaxial layer
Dislocation multiplication	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations
dislocation propagation	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal
dislocations	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper) 3-dimensional observation of dislocations in 4H-SiC using focused light birefringence Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth
Distributed circuit model	High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
divacancy	Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
divacancy quantum defects	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
DLTS	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color center Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD Dependence of the silicon carbide radiation resistance on the irradiation temperature. Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
DMOS	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
DMP	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
Dopant Activation	Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
Doped HfO2	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
Doping	Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
Doping characterization	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
doping contrast	Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC
Doping density variation	In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy (HR-SPS)
Doping Dependence	Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers
double donor	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes
Double Pulse Test Switching (DPTS)	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
Double Pulse Testing	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures
Double side polishing	Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad
Double Trench	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
Double-Pulse Testing	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation How to improve power device / module development efficiency
drain-source capacitance	Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances
Drift resistance	Accuracy of Split C-V Characterization of SiC Power MOSFETs
drift-zone doping	SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
Dry Etching	Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
dry polishing	A comparison between different post grinding processes on 4H-SiC wafers
duble p base structure	Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
Dynamic AGE-ing (DA)	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Dynamic capacitance	Gate Ringing and Dynamic Capacitance of SiC MOSFETs
Dynamic Characterization	Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation How to improve power device / module development efficiency
Dynamic On-Resistance	Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
E
EBSD	Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
Edge coupler	Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications
Edge grinding	Answers to SiC wafer and device production challenges
EDMR	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation
EDS	Impact of Al ion implantation on 4H-SiC epitaxial layer
effective mass approximation	Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field
Effects of etching processing parameters	Hydrogen etching process of 4H-SiC (0001) in limited regions
ELDRS	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
electric vehicle	Technology and Business Development of SiC MOSFET: Retrospect and Prospect WBG Semiconductor Industry Status and Prospects
Electrical Characteristics	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Electrical characteristics of device	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
electrical characterization	Stacking faults and space charge limited current in 4H-SiC Schottky diodes Processing and electrical characterization of SiC-on-Insulator structures Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface
electrical impedance spectroscopy	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy
electrical spin detection	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
electrically detected magnetic resonance	Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
Electrically-active defects	Charge carrier capture from prominent defect centers in 4H-SiC
Electrification	SmartSiC™: a greener, faster and better technology for SiC
Electro plating	A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
electrochemical etching	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
electron drift mobility	Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes
electron nuclear double resonance	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
electron radiations	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Electron traps	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper) Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
electronic stopping	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
electrons	Dependence of the silicon carbide radiation resistance on the irradiation temperature.
electroplating	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Electrothermal imbalance	Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography
Embedded SBD	Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode
Embedded sensor	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors
energy conversion efficiency	The golden age of SiC: Turning the potential of SiC into opportunities for energy conversion applications
Energy-filter	Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper)
engineered substrate	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Engineered substrates	SmartSiCTM Substrates: A Boon to Drain Metallization Process
eoitaxy	Characterisation of Silicon Carbide surfaces prepared by PPDE
Epi stacking fault defect	Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET
Epi-ready surface	Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
epigraphene	Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
Epitaxial Defects	On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
Epitaxial growth	Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates. Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Epitaxy	Novel Graphene and SiC Epitaxy to Enable Film Transfer The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)
equilibrium diffusion	Transient-enhanced diffusion of implanted aluminum in 4H-SiC
equivalent circuit	Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding
Etch	Characterisation of Silicon Carbide surfaces prepared by PPDE Advanced Carbon film for high-voltage power, high-performance SiC devices
Etch Optimisation	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
etch pit density	High-quality SiC crystal growth by temperature gradient control at initial growth stage
Etching	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Etching Chemistry	Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates
ETV-ICP-OES	Trace element analysis of purified graphite material
EV	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
Excimer laser	Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC
excitation dependence	Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation
excitonic features	Optical ionization of qubits and their silent charge states
Excluding oxidation process	A SiO2/SiC interface formed by direct bonding of SiO2 and SiC
exhaust tube	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
expansion velocity	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
extended defects	Impact of Al ion implantation on 4H-SiC epitaxial layer
Extreme temperature electronics	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
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Failure Analysis	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
failure modes	Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
Fast Sublimation Growth Process Monocrystalline	4H-SiC substrates using the Fast Sublimation Growth Process
Fast Switching	1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
Femtosecond laser	High-quality micro/nano structures of 4H-SiC patterning by vector femtosecond laser
Ferroelectric materials	Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Field Effect Mobility	High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2
FinFET effect	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
Finite Element Analysis (FEA)	A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers
first principles calculations	Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit
flexibility	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
flexural strength	A comparison between different post grinding processes on 4H-SiC wafers
floating	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET
focus ring	The role of air-pocket in crucible structure for high quality SiC crystal growth
Formation energy	DFT modeling of crystallographic defects in SiC polytypes
forward bias degradation	Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Forward voltage drop	Normally-off 1200V Silicon Carbide JFET Diode with Low VF
Fowler-Nordheim tunneling	Modeling the charging of gate oxide under high electric field
Frequency	Frequency investigation of SiC MOSFETs C-V curves with biased Drain
FSGP-M	4H-SiC substrates using the Fast Sublimation Growth Process
FTIR	Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy Comparative optical metrologies of implanted SiC wafers Characterization of very thin 3C-SiC epilayers on Si
Furnace	Centrotherm High Temperature Annealing and Oxidation Furnaces
future technology	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
G
GaAs	Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
gain	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
gain fluctuation	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
Gallium Nitride	Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
Gallium Oxide	Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Gamma Radiation	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
gamma-ray	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness Analysis of TID effects through gamma-ray irradiation experiments
GaN	Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs Characterization of Growth Sectors in Gallium Nitride Substrate Wafers Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
GaN cap	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
Gate All Around	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations
Gate Breakdown	Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology
Gate current	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
Gate driver	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
gate finger	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods
gate leakage	Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Gate oxide	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C Modeling the charging of gate oxide under high electric field Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
gate oxide breakdown	Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C
Gate oxide carbon control	Carbon control method in SIC MOSFET with Chlorine and Vth stability
gate oxide failure	Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling
Gate oxide integrity	Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
gate oxide quality improvement	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Gate oxide reliability	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability
Gate Oxide Screening	Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress
Gate reliability	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs
Gate Ringing	Gate Ringing and Dynamic Capacitance of SiC MOSFETs
gate runner	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods
Gate Trench	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
GCT	The first optimisation of a 16 kV 4H-SiC N-type IGCT
Graphen	Monitoring of graphene properties in the process of viral biosensor manufacturing
Graphene	Novel Graphene and SiC Epitaxy to Enable Film Transfer Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
graphite felt	Trace element analysis of purified graphite material
graphite materials	Trace element analysis of purified graphite material
Grinding	HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution A Meister solution for optimized grinding of laser split silicon carbide surfaces
grinding energy	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
grinding wheel	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
Grounding	Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs
growth	Mitigation of BPD Faulting Using H2 Etch for Pulsed Power Applications (invited paper) Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD Monitoring of graphene properties in the process of viral biosensor manufacturing Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
growth front shape reconstruction	Resistivity as a witness of local crystal growth conditions
H
H2 treatment	Atom probe tomography characterization of SiO2/4H-SiC interface
H2 treatment and Interface nitrogen	Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation
HAADF-STEM	Impact of Al ion implantation on 4H-SiC epitaxial layer
halide CVD	Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide films
Hall Effect	Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures
harsh environments	High-temperature α-spectroscopy with 4H-SiC based sensors
HCl	Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry
Heavily Al-doped 4H-SiC	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Heavy ion	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
Heavy ions	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
Heavy-ions	Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs
helium ion implantation	Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
HEMT	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
hetero epitaxy	Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices
Heteroepitaxy	2D materials integration on silicon carbide: a root beyond power electronics Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD
Heterogeneous integration	Atomic Diffusion Bonding using nitride films and oxide films
heterojunction	First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
heterojunctions	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
heterostructure	3C-SiC on Si substrates through transformation of Si and C multilayers Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching Ga2O3/SiC Heterostructure Schottky Diodes
high carrier lifetime	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
High cycle fatigue zone	Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses
high energy	High-energy ion channeling for deep implantation of Al into 4H-SiC
high energy ion implantation	SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
high power	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
high readout contrast	Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing
High rigid grinding	Answers to SiC wafer and device production challenges
high temperature	Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications High Temperature Devices for Aerospace Applications Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C 500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC Dependence of the silicon carbide radiation resistance on the irradiation temperature. High-temperature α-spectroscopy with 4H-SiC based sensors
high temperature gate bias	Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
high temperature IC	Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer
high temperature ion implantation	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing
High Throughput	Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
High Voltage	Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
High Volume Production	The golden age of SiC: Turning the potential of SiC into opportunities for energy conversion applications High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)
High- temperature electronics	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
High-k	Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping
high-k dielectric	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs
high-k dielectrics	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition
High-k gate dielectric	Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper)
high-k materials	Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
High-low	The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
high-pressure SF6 plasma	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
High-speed Photoluminescence mapping	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
High-speed switching	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
High-Temperature	500°C Operation of 4H-SiC SRAM
high-temperature annealing	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
high-temperature chemical vapor deposition	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
high-temperature gas source method	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
high-temperature irradiation	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations
high-temperature physical properties	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
Hole traps	Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
homo epitaxy	Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices
hot filament	Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD
hot-zone design	Design optimization of insulating materials for 4H-SiC crystal Ingot growth
HPSI	SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate
HPSI 4H-SiC wafer charaterization	In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS)
HRXRD study	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
HT Anneal and P+ Implant Process Parameters	Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
HTCVD	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
HTGB	Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses
HTRB	Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Humidity	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
HVDC	Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC
HVPE	Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Hybrid device	Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices
I
I2t	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
ICP	Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask
ICP-OES	Trace element analysis of purified graphite material
Ideality	New Generation SiC MPS Diodes with Low Schottky Barrier Height
Identification of stacking faults	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
Idss leakage current	Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET
IFSM Ruggedness	Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
IGBT	Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC Development of silicide formation process on p-type SiC by laser annealing
IGCT	The first optimisation of a 16 kV 4H-SiC N-type IGCT
implant	Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Implantation	Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design
Implantation process	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
Implicit differentiable models	Implicit differentiable models for wide temperature range SiC Schottky diode characterization
Impurities	Dual configuration of shallow acceptor levels in 4H-SiC
In-grown stacking fault	Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering
Inclined line-like defects	Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties
Incomplete Ionization	Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs
Inductively Coupled Plasma	Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma
Industrialization	Rapid industrialization of SiC trench technologies
infrared metrology	Comparative optical metrologies of implanted SiC wafers
Infrared thermography	Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography
instability	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper)
Integrated Circuit	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
integrated circuits	High Temperature Devices for Aerospace Applications
integrated optics	Physical Vapor Deposition of a-SiC thin films for optical applications
Integrated photonics	Amorphous silicon-carbide modulator based on the thermo-optic effect
Interatomic potential	Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC
interface	Thermal oxidation of 4H-SiC(0001) surface in a pure CO2 ambient Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field Determination of SiC MOS interface roughness from TEM image by using machine learning
interface carbon defect	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Interface characterization	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
interface defect of SiC/SiO2	Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations
Interface defects	Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
Interface engineering	High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC)
Interface nitrogen	Atom probe tomography characterization of SiO2/4H-SiC interface
Interface state density	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure High-mobility SiC p-channel MOSFETs on nonpolar faces Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs (invited paper) Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress
interface states	Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs
interface states density	Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films
Interface Trap Density	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices
Interface traps	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)
intersystem crossing	Spin-orbit coupling of color centers for quantum applications
Intrinsic body diode	Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode
Inverse Laplace Transform	Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
Inverter	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions
Ion	Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design
ion beam trimming	Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
Ion implantation	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) High-energy ion channeling for deep implantation of Al into 4H-SiC Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD Advanced Carbon film for high-voltage power, high-performance SiC devices Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices Comparative optical metrologies of implanted SiC wafers Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer
ion slicing	Processing and electrical characterization of SiC-on-Insulator structures
Ionic charges	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
Ionization energies	Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
irradiated SiC	Carbon cluster emitters in silicon carbide
irradiation	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs Dependence of the silicon carbide radiation resistance on the irradiation temperature.
isolation	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
isotopic enrichment	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
isotopic purity	Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
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JBS	Normally-off 1200V Silicon Carbide JFET Diode with Low VF A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
JBS diode	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
JFET	Normally-off 1200V Silicon Carbide JFET Diode with Low VF Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer
JFET Diode	Next step in SiC technology
Junction depth	Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
junction-controlled-diode	Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
K
KGD	Testing challenges for latest SiC devices
Known Good Die	Testing challenges for latest SiC devices
KPFM	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
L
Laplace deep level transient spectroscopy (LDLTS)	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
Laplace-transform photoinduced transient spectroscopy (LPITS)	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
laser ablation processing	Proposal of damage-free SiC wafer dicing using water jet guided laser
Laser Anneal	Screen UV Laser Anneal Technology for next generation of SiC Devices
Laser annealing	Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing Formation of Ti ohmic contact on p-SiC by laser annealing Nickel ohmic contacts formed on 4H-SiC by UV laser annealing A comparison between different post grinding processes on 4H-SiC wafers Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization Development of silicide formation process on p-type SiC by laser annealing Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Laser doping	Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC
Laser Separation	Understanding the Material Loss in the Laser Based SiC Wafer
laser split	A Meister solution for optimized grinding of laser split silicon carbide surfaces
Lateral	Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design
Lateral MOSFET	Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
Lateral SiC MOSFETs	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
Lateral straggling	Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD
layer transfer	Processing and electrical characterization of SiC-on-Insulator structures
Leakage current	Stacking faults and space charge limited current in 4H-SiC Schottky diodes Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Lifetime estimation	Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses
Lift-Off	Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC
Lindblad Master Equation	Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields
Liquid Si	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach
Long Inverted Silicon Pyramids substrates	Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Long-term reliability	Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography
low angle grain boundary	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography
low resistivity	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Low Specific On resistance	1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
Low Temperature	The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC
low-energy muons	Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy
Low-ohmic contacts	Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC
lower pressure thermal oxidation	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
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m-face	Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
machine learning	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC
Macrostep	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach
Macrostep growth	Hydrogen etching process of 4H-SiC (0001) in limited regions
magnetometer	Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
magnetometers	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications
magnetometry	Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Manufacturing	Accelerating SiC Mass Commercialization
MAPCE	A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
Mass transport	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster)
Material characterization	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
Material Loss	Understanding the Material Loss in the Laser Based SiC Wafer
material loss free	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
material removal rate	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface Quality improvement of SiC substrate surface with using non-abrasive CMP slurry Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Material testing	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
MCTS	DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
mechanical polish	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Memory Effect	Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry
MEMS	How SiC brings an added value to MEMS devices ? Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures
Merged PiN Schottky diode	A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
Mesa structure	Ga2O3/SiC Heterostructure Schottky Diodes
metal mask	Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
metal oxides	Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs
Metalization	SmartSiCTM Substrates: A Boon to Drain Metallization Process
metallic via	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Metallization	Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC
Metrology	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
Micro-pipe	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates
micro-PL	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
micro-Raman	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
microfabrication	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
microlens arrays	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
micropipe	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
microresonator fabrication	Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Microring resonator	Amorphous silicon-carbide modulator based on the thermo-optic effect
microstructure	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers
Minority carrier transient spectroscopy	Dual configuration of shallow acceptor levels in 4H-SiC
mirror electron microscope	Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Mist-CVD	Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD
Mobility	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide
mobility model	A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs
MOCVD	Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate.
Model	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET
modeling	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements Modeling the charging of gate oxide under high electric field
Modelling	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
modular multilevel converters	Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC
module	Technology and Business Development of SiC MOSFET: Retrospect and Prospect
module architecture	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
Molecular dynamics	Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC
molecular dynamics simulations	Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations
Monolithic Integration	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs
Morphological analysis	Hydrogen etching process of 4H-SiC (0001) in limited regions
MOS	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices Density control of single-photon sources formed at a SiO2/SiC interface (invited poster) Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces Towards functional Al2O3/AlN dielectric stacks on 4H-SiC by thermal and plasma enhanced Atomic Layer Deposition Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range
MOS Capacitor	Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
MOS Capacitors	Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C
MOS Cell	Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance
MOS channel mobility	Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper)
MOS devices	Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing
MOS interface	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
MOS structure	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing
MoS2	Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films
MOScapacitor	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
MOSFET	Technology and Business Development of SiC MOSFET: Retrospect and Prospect Next step in SiC technology High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager 500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment. Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate. Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on 4H-SiC Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2 Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
MOSFET processing	On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
MOSFETs	TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster) Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster)
MOSFETs in parallel	UIS ruggedness of parallel 4H-SiC MOSFETs
motor drive	Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives
MPS diode	Systematic tracking of defects from substrate to final device by full wafer mapping techniques New Generation SiC MPS Diodes with Low Schottky Barrier Height
MRR	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Multi-Epi	Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Multi-Layer Epi	Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate.
multi-physics modeling	Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling
Multi-Wafer Reactor	High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper)
muon spin spectroscopy	Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy
N
n-channel	SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate
nano-FTIR	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers
Nanofabrication	Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications Plasmonic Ag nanoparticles on 4H-SiC for sensing application
nanopipe	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Nanosecond Laser Annealing	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
nanosheets	The Rise of 2D SiC Semiconductors
Near interface traps	High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model
Near-field Raman	Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
near-interface traps	Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)
Negative Vth Shift	Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
neural interface	Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
neural interfaces	Silicon Carbide Biotechnology There is more to SiC than power electronics!
neutron detectors	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
neutron irradiation	DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation
NiAl	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC
NiAl alloy contacts	Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Nickel contact	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
Nickel silicidation	Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC
Nickel silicide	Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization
Nickel Silicide formation	Ni/4H-SiC ohmic contact formation using multipulse nanosecond laser annealing
NIOTs	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation
NiSi and Ti P+ Contacts	Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
Nitridation	Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
nitrogen	Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy
Nitrogen Plasma	The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC
Nitrogen surface doping	The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC
nitrogen vacancy pair	Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
NO annealing	Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations
non alloyed	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC
non-abrasive slurry	Quality improvement of SiC substrate surface with using non-abrasive CMP slurry
Non-alloyed ohmic contact	SmartSiCTM Substrates: A Boon to Drain Metallization Process
Non-contact CV	Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
non-polar face	Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
non-radiative spin relaxation	Spin-orbit coupling of color centers for quantum applications
non-stoichiometric source	Effect of the Source Composition on PVT SiC in Graphite and TaC Coated Crucibles
noncontact	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization Kinetics
nonpolar face	High-mobility SiC p-channel MOSFETs on nonpolar faces
Novel Defect	Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
Novel high-k gate dielectric	High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC)
nuclear magnetic resonance	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
nuclear spin	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
numerical modeling	Effect of the Source Composition on PVT SiC in Graphite and TaC Coated Crucibles Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma
numerical simulation	Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications
O
ODMR	Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
off-axis seed crystal	Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal
Ohmic	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC
Ohmic contact	Formation of Ti ohmic contact on p-SiC by laser annealing Nickel ohmic contacts formed on 4H-SiC by UV laser annealing Plasma Treatment after NiSi-based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC
Ohmic contacts	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
On-line monitoring	Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses
on-resistance of Power MOSFET	Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs
On-state Resistance	Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
Ones-sided shielded Trench	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
Optical Beam Induced Current	Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Optical BJT	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
optical cavities	Silicon carbide based optical frequency comb (invited paper)
Optical excitation	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation
Optical inspection	Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography
optical method	Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method
optical microscope image	Prediction of contact resistance of 4H–SiC by machine learning using optical microscope images after laser doping
Optical Microscopy	Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties
optical modeling	Comparative optical metrologies of implanted SiC wafers
Optical Properties	Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC
optical spectroscopy	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
optically detected magnetic resonance	Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields
optimization	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Oxidation	Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films Density control of single-photon sources formed at a SiO2/SiC interface (invited poster) Centrotherm High Temperature Annealing and Oxidation Furnaces
Oxidation processes	Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper)
Oxide Defects	On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
Oxide traps	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation Carbon control method in SIC MOSFET with Chlorine and Vth stability
oxygen defect	Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit
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p base	Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
P+ Ohmic Contact Resistance	Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
p-channel	Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs
p-channel MOSFET	High-mobility SiC p-channel MOSFETs on nonpolar faces
p-diode model	Implicit differentiable models for wide temperature range SiC Schottky diode characterization
p-n junctions	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
P-shielding	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
p-type	Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs
p-type contact resistance	Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics
p-type poly-Si gate	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper)
p-type SiC	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC
package architecture	Influence of material properties on ruggedness evaluation of package architectures for SiC power devices
Packaging	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
pad	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Parallel SiC MOSFETs	Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography
paralleling	Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs
Parameter optimization	Implicit differentiable models for wide temperature range SiC Schottky diode characterization
Parasitic Turn On	1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
passivation	Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation
Patterned Substrate	Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC
Patterned surface	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach
PbC center	Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles calculation
Peripheral Protection	Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
permittivity	Temperature Dependent Permittivity of (0001) and (11-20) 4H-Silicon Carbide Measured by Electrical Impedance Spectroscopy
phase field	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
phase transformation	3C-SiC on Si substrates through transformation of Si and C multilayers
phase-change	Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling
photo physics	Optical ionization of qubits and their silent charge states
Photo-electrochemical etching	High-temperature reorganization behavior of porous 4H-SiC thin foils
photo-modulated reflectance	Comparative optical metrologies of implanted SiC wafers
photocurrent detected magnetic resonance	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
Photodiode	Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors
photoelectrochemical oxidation	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride
photolithography	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide
photoluminescence	Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers Photoluminescence polarization of single TS centers in 4H-SiC Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Photoluminescence spectroscopy	Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs
photomask layout	Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
photon-assisted electron injection	Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress
Photonic	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
photonic devices	Silicon carbide based optical frequency comb (invited paper)
Physical model	A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs
physical vapor transport growth	Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed crystal Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
PiN Diodes	Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes
pin-diode	Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications
Pinched Barrier Rectifier (PBR)	A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
Pixel Devices	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors
Planar	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
Planar MOSFET	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs
planetary science	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications
plasma etching	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks
Plasma treatment	Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
Plasmonic	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
PMR	Comparative optical metrologies of implanted SiC wafers
PN diode	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
PND	Development of silicide formation process on p-type SiC by laser annealing
POA	Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment.
Point defects	Dual configuration of shallow acceptor levels in 4H-SiC Investigation of dislocation behaviors in 4H-SiC under thermal treatment
polar face	Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
polarity	Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD
Polarized light microscopy	Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
Polish	Characterisation of Silicon Carbide surfaces prepared by PPDE A Meister solution for optimized grinding of laser split silicon carbide surfaces
Polish Grinding	Answers to SiC wafer and device production challenges
Polishing	High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride How process scaling offers maximum flexibility of SiC wafering along the complete process chain HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
polycrystalline SiC	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
polycrystalline Silicon Carbide	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Polytype stability	DFT modeling of crystallographic defects in SiC polytypes
polytypes	Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C
Porosification	A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
Porous SiC	High-temperature reorganization behavior of porous 4H-SiC thin foils
Positive and negative polarization stress	TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses
Positively beveled mesa termination	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
Post-deposition annealing	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
Power	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
power cycling	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation Power cycling of SiC MOSFETs packaged in different module’s solutions
power cycling test	Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Power device	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
Power devices	Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices
Power module	High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
Power Modules	How to improve power device / module development efficiency
Power MOSFET	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Power MOSFETs	Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper)
Power semiconductor	Analysis of TID effects through gamma-ray irradiation experiments
power SiC	WBG Semiconductor Industry Status and Prospects
Power switching cells	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
powertrain	INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET
pre-treatment process	4H-SiC crystal growth using recycled SiC powder source
precipitates	Impact of Al ion implantation on 4H-SiC epitaxial layer
precision	SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
predictive modeling	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
preferential orientation	Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
Prismatic dislocations	Investigation of dislocation behaviors in 4H-SiC under thermal treatment
process interruptions	A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC
process simulation	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
Process variation	A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
processes	Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Processing	HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution
Production line	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
Protection	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors
protection overcoat design	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
proton implantation	Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper)
proton irradiation	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations
protons	Dependence of the silicon carbide radiation resistance on the irradiation temperature.
pulsed electron paramagnetic resonance spectroscopy	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions
pulsed forward current	Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
purification	Trace element analysis of purified graphite material
purified graphite	Trace element analysis of purified graphite material
PVD	Physical Vapor Deposition of a-SiC thin films for optical applications
PVT	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster) Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
PVT growth	High-quality SiC crystal growth by temperature gradient control at initial growth stage
PVT SiC	Effect of the Source Composition on PVT SiC in Graphite and TaC Coated Crucibles
Q
Q-factor	Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon
QUAD mapping	Systematic tracking of defects from substrate to final device by full wafer mapping techniques
quality	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
Quantum	Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
quantum applications	OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications
quantum bits	Spin-orbit coupling of color centers for quantum applications
quantum centers	Electrically Detected Magnetic Field Sensing of Quantum Centers in SiC Junction Field Effect Transistors
Quantum defects	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
Quantum devices	Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide
Quantum emitter	Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit
quantum memory	Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
quantum networks	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Quantum Sensing	Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields
Quantum well	Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes
Quantum well effect	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations
quasi-substrate	Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers
R
Rad-hard	Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors
Radiation	Analysis of TID effects through gamma-ray irradiation experiments
radiation detector	Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines
radiation hard sensors	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Radiation Hardening	Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode
radiation hardness	Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness
radiation sensors	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
Radiation-Hard	500°C Operation of 4H-SiC SRAM Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors
Radiation-hardness	Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications
Radiation-Induced characterization	Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
radiaton hard sensors	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
radiotherapies	Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH radiotherapies
Raman com measurement	Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator
Raman spectroscopy	Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates Stress fields distribution and simulation in 3C-SiC resonators.
Raman/SERS	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
Range	Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design
Rapid growth	Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method
rapid thermal processing	3C-SiC on Si substrates through transformation of Si and C multilayers
RDSON	650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Reactive Ion Etching	Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma
reactive materials	3C-SiC on Si substrates through transformation of Si and C multilayers
Recombination Enhanced Dislocation Glide	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion
Recovery	Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
recycled powder lump	4H-SiC crystal growth using recycled SiC powder source
reduced pressure oxidation	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
Reflectance Spectroscopy	Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC
Regional Coverage	Rapid industrialization of SiC trench technologies
Reliability	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation High-k Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Reliability (ttddb≥ 104s), and High Thermal Stability (≥ 800 oC) Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC Dynamic Bias-Temperature Instability Testing in SiC MOSFETs Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure Power cycling of SiC MOSFETs packaged in different module’s solutions Influence of material properties on ruggedness evaluation of package architectures for SiC power devices SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
Remote Epitaxy	Novel Graphene and SiC Epitaxy to Enable Film Transfer
removal	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
removal rate	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
repeated surge stress	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
resistance	Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
resistance integration	Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods
resistivity	Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD
resistivity map	Resistivity as a witness of local crystal growth conditions
Resistivity measurement	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
Reverse recovery	Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs
Reverse Recovery Energy	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
review	Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper)
RF	Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs
RF sputtering	Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
RIE	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
RONSP	650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
room temperature	Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing
Room temperature bonding	Atomic Diffusion Bonding using nitride films and oxide films
roughness	Determination of SiC MOS interface roughness from TEM image by using machine learning
Rounded Corner	Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
Ruggedness	Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs
S
Sandwich	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach
SBD-MOSFET	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures
scaling	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
Scaling Up	Rapid industrialization of SiC trench technologies
Scanning Capacitance Microscopy	Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster)
scanning electron microscope	Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC
scanning electron microscopy	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
Scanning Probe Microscopy	Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster)
Scanning Spreading Resistance Microscopy	Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited poster)
Schockley stacking faults	Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Schottky barrier diode	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
Schottky Barrier Diodes	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Schottky Barrier Height (SBH)	New Generation SiC MPS Diodes with Low Schottky Barrier Height
Schottky Barrier Height Inhomogeneity	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes
Schottky contacts	Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena
Schottky diode	Implicit differentiable models for wide temperature range SiC Schottky diode characterization Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide deposition
Schottky diodes	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC Stacking faults and space charge limited current in 4H-SiC Schottky diodes Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC (invited paper)
Schottky emission	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
scratch induced dislocation	Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography
SCWT	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
secondary electron doping contrast	Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC
secondary ion mass spectrometry	Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC
selection rules in excitation	Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Selectivity	Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask
self heating	UIS ruggedness of parallel 4H-SiC MOSFETs
Self-aligned channel	A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
SEM	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
SEM Vision	Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line
semi-insulating substrate	Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC Substrates
Semiconductor substrates	SmartSiC™: a greener, faster and better technology for SiC
semiconductors	Combustion synthesis of SiC towards preparation of quantum sensors Enabling Next Generation WBG Semiconductors Using CVD Technology The Rise of 2D SiC Semiconductors
sensing	How SiC brings an added value to MEMS devices ? Plasmonic Ag nanoparticles on 4H-SiC for sensing application
Sensor	Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors
sensors	High-temperature α-spectroscopy with 4H-SiC based sensors
shallow ion implantation	Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications
Shockley-Type Stacking Fault	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion
Short channel effects	Influence of Channel Length and Gate oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
short circuit	Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling
Short circuit withstand time	Investigation of the short-circuit withstand time and on-resistance trade-off of 1.2 kV 4H-SiC Power MOSFETs
Short Step Bunching (SSB)	Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties
short-channel effects	Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs
Short-circuit	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Si-face	Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
SiC	Technology and Business Development of SiC MOSFET: Retrospect and Prospect Next step in SiC technology Normally-off 1200V Silicon Carbide JFET Diode with Low VF Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices Enabling the next generation of SiC devices through low resistivity Al doped layers formed using high dose high temperature Aluminum implants and Laser annealing Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers A comparison between different post grinding processes on 4H-SiC wafers Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs Comparison of Si CMOS and SiC CMOS Operational Amplifiers Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC Determination of SiC MOS interface roughness from TEM image by using machine learning Analysis of Gain Fluctuation for SiC Amplifier with Radiation Hardness Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide Understanding the Material Loss in the Laser Based SiC Wafer Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries Reduction of the SiC trench sidewalls striations. Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC. Development of silicide formation process on p-type SiC by laser annealing Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR) 4H-SiC substrates using the Fast Sublimation Growth Process How process scaling offers maximum flexibility of SiC wafering along the complete process chain Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors Characterization of aluminum and nitrogen implants into silicon carbide using Fourier transform infrared spectroscopy 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2 HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution Comparative optical metrologies of implanted SiC wafers A Meister solution for optimized grinding of laser split silicon carbide surfaces Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper) Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature range Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx films Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
SiC Bipolar Device	The first optimisation of a 16 kV 4H-SiC N-type IGCT
SiC Boule Fabrication	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
SiC Boule Processing	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
SiC Boule to Puck Conversion	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
SiC bulk growth	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
SiC Charge-Balanced MOSFET	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
SiC CMOS	SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module
SiC crystal growth	4H-SiC crystal growth using recycled SiC powder source The role of air-pocket in crucible structure for high quality SiC crystal growth
SiC defect	An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
SiC defect characterization	An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
SiC diode	Formation of Ti ohmic contact on p-SiC by laser annealing
SiC Epi	Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC substrate.
SiC Epitaxy	A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC SmartSiCTM Substrates: A Boon to Drain Metallization Process
SiC GTO	The first optimisation of a 16 kV 4H-SiC N-type IGCT
SiC Ingot Fabrication	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
SiC Integrated circuits	Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications
SiC layer transfer	SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
SiC Lifetime enhancement	An investigation into the enhancement of carrier lifetime in thick 4H-SiC epitaxial layers for bipolar devices
SiC module	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
SiC MOS	Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films
SiC MOS devices	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices
SiC MOSFET	The golden age of SiC: Turning the potential of SiC into opportunities for energy conversion applications SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Unique Failure Mode of SiC MOSFETs under Accelerated HTRB 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes High-mobility SiC p-channel MOSFETs on nonpolar faces Unclamped inductive switching response of SiC MOSFETs under extreme slow transient Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Gate Ringing and Dynamic Capacitance of SiC MOSFETs Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate Analysis of TID effects through gamma-ray irradiation experiments High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives Frequency investigation of SiC MOSFETs C-V curves with biased Drain Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
SiC MOSFETs	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs Power cycling of SiC MOSFETs packaged in different module’s solutions Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
SiC MPS diode	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
SiC PN and MPS Diodes	Ohmic contact resistance in SiC diodes with Ti and NiSi P+ contacts
SiC polishing	Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing Pad Total SiC Polishing Process Optimization for Cost of Ownership
SiC powder	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules
SiC power device	Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination
SiC power MOSFET	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper) Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling
SiC power MOSFETs	Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs
SiC single crystal	High-quality SiC crystal growth by temperature gradient control at initial growth stage Design optimization of insulating materials for 4H-SiC crystal Ingot growth
SiC solution growth	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method Effects of Solution Properties on Growth Conditions of SiC Solution Growth
SiC source	SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited poster)
SiC substrates	4H-SiC substrates using the Fast Sublimation Growth Process
SiC surface protection	Advanced Carbon film for high-voltage power, high-performance SiC devices
SiC thermal oxidation	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
SiC trench MOSFET	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
SiC trench MOSFETs	Impact of the p base junction depth on electrical properties of 4H SiC trench MOSFETs with the double p base structure
SiC wafering	Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
SiC&GaN	WBG Semiconductor Industry Status and Prospects
SiC-CMOS	Comparison of Si CMOS and SiC CMOS Operational Amplifiers
SiC-MOSFET	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
SiC-on-insulator	Processing and electrical characterization of SiC-on-Insulator structures
SiC-on-insulator (SiCOI)	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
SiC-OpAmp	Comparison of Si CMOS and SiC CMOS Operational Amplifiers
SiC-SiO2 interface	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation
SiC/SiO2	High-mobility SiC p-channel MOSFETs on nonpolar faces
SiC/SiO2 interface	Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications
SiC/SiO2-interface characterization	Emission of Trapped Electrons from the SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
Silicidation model	Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC
Silicide	Development of silicide formation process on p-type SiC by laser annealing Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
silicon carbide	The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Processing and electrical characterization of SiC-on-Insulator structures Direct observation of charge density manipulation in 4H-SiC MOS capacitors using low-energy muon spin spectroscopy Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line Combustion synthesis of SiC towards preparation of quantum sensors Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD Analysis of TID effects through gamma-ray irradiation experiments Accuracy of Split C-V Characterization of SiC Power MOSFETs Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines Dependence of the silicon carbide radiation resistance on the irradiation temperature. Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled Plasma Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices WBG Semiconductor Industry Status and Prospects Enabling Next Generation WBG Semiconductors Using CVD Technology Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited paper) The Rise of 2D SiC Semiconductors Ab initio study of oxygen-vacancy defect in 4H-SiC: A potential qubit
silicon carbide (SiC)	Silicon carbide as a host of color centers emitting at telecom bands AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs
Silicon carbide wafer	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
Silicon Carbide(SiC)	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
silicon vacancy	Electrical detection of nuclear spins in silicon carbide using silicon vacancy quantum spins in ambient conditions Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion microscopy
silicon-carbide	SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping
Silver Nanoparticles	Plasmonic Ag nanoparticles on 4H-SiC for sensing application
SIMS	High-energy ion channeling for deep implantation of Al into 4H-SiC
Simulation	Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design
simulations	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
simultaneous data fitting	Threshold voltage variation of SiC trench MOSFETs during TDDB stress
single bilayer step	Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
single defect	Photoluminescence polarization of single TS centers in 4H-SiC
single divacancy defects	Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing
single event burnout	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Single event burnout (SEB)	Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact
single event effect	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs
Single event effects	Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs
Single Event Immunity	Optimization of Single-Event Burnout Resistance 1.2 kV SiC Schottky Barrier Diode
single photon emitters	Carbon cluster emitters in silicon carbide Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing
single photon emitters (SPEs)	Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties
single photon source	Density control of single-photon sources formed at a SiO2/SiC interface (invited poster)
Single Shockley Stacking Faults	Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes
Single-Event Gate Rupture(SEGR)	Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors
single-zone junction termination edge	Early-stage reliability evaluation of passivation stack and termination designs in SiC MPS diodes
SiO2	Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC
SiO2/SiC interface	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability Formation of color centers at SiO2/SiC interfaces by thermal oxidation and its correlation with electrical properties A SiO2/SiC interface formed by direct bonding of SiO2 and SiC
SiO2/SiC interface carbon reduction	SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
SiO2/SiC interfaces	Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and annealing
slicing	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
slicing process	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Slicon Carbide	Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
slow transient	Unclamped inductive switching response of SiC MOSFETs under extreme slow transient
Slurry	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.
smart cut	Processing and electrical characterization of SiC-on-Insulator structures Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates
Smart Cut™	Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
SmartCut	Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
SmartCut™	SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
SmartSiC	Crystal originated defect monitoring and reduction in production grade SmartSiC engineered substrates Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
SmartSiCTM	Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power devices
SmartSiCTM Substrate	SmartSiCTM Substrates: A Boon to Drain Metallization Process
SmartSiC™	SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level
sMIM	AFM-sMIM analysis of the recombination enhancing layer for bipolar-degradation-free SiC MOSFETs
Snapback	A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
SNDM	SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure
Software modeling	Testing challenges for latest SiC devices
solid state transformer（SST）	Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer
solution growth	The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper) Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Solution properties	Effects of Solution Properties on Growth Conditions of SiC Solution Growth
solvent inclusion	Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Space	Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications OPuS-MAGNM – Progress on Miniaturized Optically Pumped Solid State Quantum Magnetometers for Space Applications
space explorations	High Temperature Devices for Aerospace Applications
Specific on-resistance	A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
spectroscopy	Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC
SPICE	High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET
SPICE modeling	Comparison of Si CMOS and SiC CMOS Operational Amplifiers
Spin Centers	Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic Fields
spin coherent control	Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing
Spin defect	Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC
spin dephasing	Improved Magnetic Sensing with the Silicon Vacancy in Isotopically-Purified 4H-SiC
Spin dynamics	Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide
Spin Magnetic Resonance	Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide
Spin-active defects	Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide
spins	Grayscale hard-mask lithography protocol for the fabrication of high aspect ratio microstructures in silicon carbide Optical spectroscopy of single O-band vanadium emitters in SiC with ultra-narrow inhomogeneous distribution
Split C-V	Accuracy of Split C-V Characterization of SiC Power MOSFETs
Spreading Resistance Profiling	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers
Sputter deposition	Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing
SSCB	Analytical Modeling of Conduction, Blocking and Breakdown Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device Technology
SSF	Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
stability	Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries How process scaling offers maximum flexibility of SiC wafering along the complete process chain
stacking fault	Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
Stacking Faults	Stacking faults and space charge limited current in 4H-SiC Schottky diodes A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC Development of silicide formation process on p-type SiC by laser annealing
Stacking faults in SiC	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations
Standard molar enthalpy	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC
Static Random Access Memory	500°C Operation of 4H-SiC SRAM
Statistical Mechanics	Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems
Step bunching	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Step debunching	Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
step-bunching	Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing
step-terrace structure	Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1) surface
Stray Inductance	Testing challenges for latest SiC devices
Stress	Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope
Stress & Measure	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
stress distribution	Stress fields distribution and simulation in 3C-SiC resonators.
striations	Reduction of the SiC trench sidewalls striations.
Strucutre of stacking faluts	Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and HR-STEM
Sublimation etching	Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
sublimation process	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Substrate	Characterisation of Silicon Carbide surfaces prepared by PPDE A Meister solution for optimized grinding of laser split silicon carbide surfaces
Substrate BPD defect	Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET
Substrate Reuse	Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
subsurface damage	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Subthreshold drain leakage	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs
subthreshold slope	Suppression of subthreshold drain leakage via implementation of high-κ dielectrics for advanced SiC power MOSFETs
subthreshold technique	Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias stresses
Sulfur	Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter
Super Junction	Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical Performance Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper)
super-junction	Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances
supercritical fluid treatment	Performance improvement by carbon-dioxide supercritical fluid treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Superjunction DMOSFET	Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
Superjunction-MOSFETs	Reverse recovery characteristics of 1.2kV SiC-Superjunction-MOSFETs
Surface	Free-standing 3C-SiC p-type doping by Al ion implantation
Surface damage	Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers
Surface energy	Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to Experiment
surface finish	Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers
surface micromachining	How SiC brings an added value to MEMS devices ?
Surface morphology	Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing®
Surface quantum well	GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT
surface recombination	Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation
surface roughness	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC wafers
Surface structuring	Surface structuring of patterned 4H-SiC surfaces using a SiC/Si/SiC sandwich approach
Surge capability	New Generation SiC MPS Diodes with Low Schottky Barrier Height
surge current	Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding
Surge Current Robustness	3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Classes
Sustainability	SmartSiC™: a greener, faster and better technology for SiC
switching characteristics	Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics
Switching Energy	Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-side Shielded Trench, and Double Trench Gate Structures
switching energy losses	Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on Characteristics
synchrotron diffraction	Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect synthesis
T
TaC	Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Tail band trap	Extraction of SiO2/4H-SiC interface trap charge by TCAD simulation
TBA1	Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations (invited paper)
TBA2	Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations (invited paper)
TBA3	Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations (invited paper)
TBD	Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) LPE + ASM – Combination powers SiC growth SiC epi fabrication – 150 & 200 mm G10-SiC epitaxy platform
TBD1	Vanadium in SiC: the spin for telecom quantum networks (invited paper) Non-Destructive Characterization of Buried Damage in SiC Substrates". No mater how good bulk SiC substrates and epi processes are, proper polishing/CMP and characterization of the surface and subsurface damage are critical for device yield and reliability (invited paper) Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper) Novel photonic applications of SiC Driving Clean Energy Adoption and Sustainability: The Pivotal Role of Silicon Carbide Power Electronics Technology LPE + ASM – Combination powers SiC growth SiC epi fabrication – 150 & 200 mm G10-SiC epitaxy platform
TBD2	Vanadium in SiC: the spin for telecom quantum networks (invited paper) Non-Destructive Characterization of Buried Damage in SiC Substrates". No mater how good bulk SiC substrates and epi processes are, proper polishing/CMP and characterization of the surface and subsurface damage are critical for device yield and reliability (invited paper) Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper) Novel photonic applications of SiC Driving Clean Energy Adoption and Sustainability: The Pivotal Role of Silicon Carbide Power Electronics Technology LPE + ASM – Combination powers SiC growth SiC epi fabrication – 150 & 200 mm G10-SiC epitaxy platform
TBD3	Vanadium in SiC: the spin for telecom quantum networks (invited paper) Non-Destructive Characterization of Buried Damage in SiC Substrates". No mater how good bulk SiC substrates and epi processes are, proper polishing/CMP and characterization of the surface and subsurface damage are critical for device yield and reliability (invited paper) The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper) Novel photonic applications of SiC Driving Clean Energy Adoption and Sustainability: The Pivotal Role of Silicon Carbide Power Electronics Technology
TCAD	Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD The role of Dit(E) and the capture cross section on the C-V characteristics of 4H-SiC MOS capacitors
TCAD simulation	SiC GAA MOSFET concept for high power electronics performance evaluation through advanced TCAD simulations Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
TCAD simulations	Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
TCS	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
TDDB	Modelling-augmented failure diagnostics in planar SiC MOS devices using TDDB measurements Threshold voltage variation of SiC trench MOSFETs during TDDB stress
TDTR	Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Telecom bands	Silicon carbide as a host of color centers emitting at telecom bands
TEM	Geometrical modification of the starting surface for three-dimensional epitaxy of low defect 3C-SiC Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Temperature	Impact of Different Schottky Barrier Diode Ratios on Static and Dynamic Characteristics of embedded SBD-MOSFET at Different Temperatures
Temperature Dependence	Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers
Temperature Dependent Electrical Properties	Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes
temperature field	Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC boules
Temperature sensor	Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs
Temperature-dependent Hall coefficient	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Temperature-dependent resistivity	Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC
Testing	Testing challenges for latest SiC devices
thermal boundary resistance	Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
thermal conductivity	Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
thermal decomposition epitaxy	Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.
thermal fluid simulation	Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD
thermal oxidation	Thermal oxidation of 4H-SiC(0001) surface in a pure CO2 ambient
Thermal stability	Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC
thermal stress	Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth
Thermal treatment	Investigation of dislocation behaviors in 4H-SiC under thermal treatment
Thermionic effect	On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
thermo-mechanical stress	Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical Modeling
Thermo-optic modulator	Amorphous silicon-carbide modulator based on the thermo-optic effect
Thermochromic	Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C
thick epitaxial growth	Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers
Thick epitaxial layers	Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties
Thick epitaxy	250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances.
Thickness	Characterization of very thin 3C-SiC epilayers on Si
Thin film	Physical Vapor Deposition of a-SiC thin films for optical applications Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon Carbide
thin films	2D materials integration on silicon carbide: a root beyond power electronics Integrated Atomic Layer Deposition Gate Dielectric Stacks for SiC MOSFET Power Devices
Thin foil	A novel approach for thin 4H-SiC foil realization using controlled spalling from a 4H-SiC wafer
Thin foils	High-temperature reorganization behavior of porous 4H-SiC thin foils
Thinning	HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution
third quadrant	A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate
threading screw dislocation	Effect of Sub-micron-sized Micropipes on Electric Properties of SiC Devices
Threshold Voltage	Low on-resistance (< 0.7 mΩcm2) 4H-SiC vertical FinFETs with increased threshold voltage by using p-type poly-Si gate (invited paper) High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interlayer between SiC and SiO2 Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress Threshold voltage variation of SiC trench MOSFETs during TDDB stress 650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
threshold voltage drift	Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress
Threshold voltage instability	Investigation of the near interface oxide defects in a SiO2-SiC system using optical excitation Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests
Threshold voltage stability	Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power Devices
Threshold-Voltage Instability	Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
throughput	How process scaling offers maximum flexibility of SiC wafering along the complete process chain
Time-dependent dielectric breakdown	Analysis of SiO2/SiC interfaces formed by ALD, LPCVD or direct thermal growth and their impact on high temperature, long-term oxide reliability
TiN	Long Term Reliability and Deterioration Mechanisms of High Temperature Metal Stacks on 4H-SiC 500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs
TMBS	Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding
Total ionising Dose	Investigations into the impact of deposition or growth techniques on the field oxide TID response in 4H-SiC space applications
Total ionizing dose (TID)	Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
TPRE	Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
trace element analysis	Trace element analysis of purified graphite material
Traction	Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
transient events	UIS ruggedness of parallel 4H-SiC MOSFETs
Transient Simulation	Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation
transient thermal resistance	UIS ruggedness of parallel 4H-SiC MOSFETs
transient-enhanced diffusion	Transient-enhanced diffusion of implanted aluminum in 4H-SiC
transistor	First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure
transition metal ion	Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface
transmission electron microscope	Determination of SiC MOS interface roughness from TEM image by using machine learning
Transmission Electron Microscopy	Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers Extended defects and stress relaxation in 3C-SiC grown on compliance Si substrates
Transparent Thin Layers	Optimization of Reflectance Spectroscopy for Transparent Layers on 4H-SiC
trap state	Study on electron trap states of Al implanted Ni/SiC Schottky barrier diodes using DLTS
trap-assisted tunneling	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC
trapping	Processing and electrical characterization of SiC-on-Insulator structures Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
Traps	Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Trench	Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask Anisotropic stress observation of 4H-SiC Trench-Test MOSFET structures by Scanning Near-field Optical Raman Microscope Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs Reduction of the SiC trench sidewalls striations. Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications Rapid industrialization of SiC trench technologies
trench gate	Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer
Trench MOSFET	Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs Threshold voltage variation of SiC trench MOSFETs during TDDB stress
trenched gate	Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer
Trenched junction-pinched barrier rectifier (TBR)	A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure (TBR)
TrenchMOS	Increasing 4H-SiC Trench Depth by Improving the Dry-Etch Selectivity Towards the Oxide Hard Mask
TSD	Systematic tracking of defects from substrate to final device by full wafer mapping techniques
TSI Semiconductors	Rapid industrialization of SiC trench technologies
TSSG method	Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Tunneling	Carrier transport mechanism of NiAl contacts on n-type 4H-SiC
tunneling current	Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes
Twin mediated growth	Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC
Two-dimensional materials	The Rise of 2D SiC Semiconductors
U
UIS	Unclamped inductive switching response of SiC MOSFETs under extreme slow transient
ultra-high-voltage	Ultra-High-Voltage SiC-IGBT for Modular-Multilevel-Converters in HVDC
Ultraviolet Irradiation	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion
Ultraviolet Photoluminescence	Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF expansion
Ultraviolet Photoluminescence Imaging	Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Unclamped Inductive Switching	UIS ruggedness of parallel 4H-SiC MOSFETs
uniformity improvement	Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming
unipolar AC stress	Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress
UV	Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors
UV Expansion	Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
UV Imaging	Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors
UV irradiation	Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
UV Laser	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
UV-PL	Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
UVPL	Systematic tracking of defects from substrate to final device by full wafer mapping techniques
UVPL Imaging	Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed Dislocations
V
V-doped semi-insulating	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
V-doped SiC source	Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT method
vacancy	Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method
vacancy-related defects	Spin-orbit coupling of color centers for quantum applications
Vacuum-Packaged Resonators	Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100> silicon
variability	Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs
VDMOS	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
VDMOSFET	A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
Venus	Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
Vertical	Centrotherm High Temperature Annealing and Oxidation Furnaces
vicinal carbon face	Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching
vicinal off angle	Epitaxial growth of GaN and 4H-SiC layers on 4H-SiC vicinal off angle substrates for GaN/SiC hybrid devices
VIISta® SiC	Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices
virtual prototyping	Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs
viruses	Monitoring of graphene properties in the process of viral biosensor manufacturing
voltage adjustable diode	A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate
Voltage mapping	Epitaxial defectivity characterization combining surface voltage and photoluminescence mapping.
Voltage overshoot	Testing challenges for latest SiC devices
VTH	650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2
Vth instability	Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body diode
Vth stability	Carbon control method in SIC MOSFET with Chlorine and Vth stability
VUV	Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications
W
wafer	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
Wafer bonding	Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface Atomic Diffusion Bonding using nitride films and oxide films
wafer dicing	Proposal of damage-free SiC wafer dicing using water jet guided laser Answers to SiC wafer and device production challenges
Wafer inspection	Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light Scattering Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques
Wafer probing	Answers to SiC wafer and device production challenges
Wafer quality inspection	In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS)
Wafer Ready Material	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
Wafer testing	High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers
wafer yield	A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing processes
Wafering	HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution
Wafering Process	Understanding the Material Loss in the Laser Based SiC Wafer
wafers	Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of Ownership
water jet guided laser	Proposal of damage-free SiC wafer dicing using water jet guided laser
wavefunction	Unique localization of conduction band wavefunction near SiO2/4H-SiC interface by applied electric field
waveguides	Silicon carbide based optical frequency comb (invited paper)
Waveguiding	Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide
Wide Bandgap	Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer Defects Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors
Wide-bandgap power devices	How to improve power device / module development efficiency
X
X-ray Analysis	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
X-ray topography	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide Substrates Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals Characterization of Growth Sectors in Gallium Nitride Substrate Wafers Structural Analysis of Novel Butterfly Defect in 4H-SiC Substrates
X-rays	Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines
Xray monitoring	Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide sensors
XRDI	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices
XRT	The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Y
Yield	On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC
Z
Z1 and Z2 defects	Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform Algorithm
µ
µ-Raman	Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices