PROGRAM FOR WEDNESDAY, SEPTEMBER 20TH
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08:30-10:30 Session 18A: Devices 3: Bipolar operation in SiC technology & late news
Chairs:
Location: Auditorium Sirene
08:30 | Development of Elemental Technologies for SiC Superjunction Structure and SiC-IGBT Voltage Withstanding Layer (invited paper) |
09:00 | Impacts of Single Shockley Stacking Faults on Electrical Characteristics of 4H-SiC PiN Diodes |
09:20 | Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs |
09:40 | The impact of gamma irradiation on 4H-SiC bipolar junction inverters under various biasing conditions |
10:00 | Over 600°C operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer PRESENTER: Shunya Shibata |
08:30-10:30 Session 18B: Material 2: Epitaxial growth
Chairs:
Location: Ulisse
08:30 | High-Volume SiC Epitaxial Layer Manufacturing - Maintaining High Materials Quality of Lab Results in Production (invited paper) PRESENTER: Bernd Thomas |
09:00 | Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates. |
09:20 | Formation of basal plane dislocations by stress near epi/sub interface of 150 mm diameter SiC wafers with thick epitaxial layers |
09:40 | The optimisation and characterisation of 4H-SiC layers for high voltage (>10 kV) devices |
10:00 | Investigating the Influence of Various Hydrocarbons on CVD Epitaxial Growth of 4H-SiC: Surface Morphology and Properties PRESENTER: Misagh Ghezellou |
11:00-12:30 Session 19A: Process 3: Laser Processing
Chairs:
Location: Auditorium Sirene
11:00-12:30 Session 19B: Applications 1
Chairs:
Location: Ulisse
11:00 | Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling (invited paper) PRESENTER: Matteo Meneghini |
11:30 | Effects of high gate voltage stress on threshold voltage stability in planar and trench SiC power MOSFETs |
11:50 | Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements |
12:10 | Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates PRESENTER: Hidetsugu Uchida |
12:30-14:00 Lunch
Location: Agrumeto
14:00-16:00 Session 20A: Process 4: Implantation-based processing
Chairs:
Location: Auditorium Sirene
14:00-16:00 Session 20B: Quantum 2: Single-photon sources and quantum sensing
Chairs:
Location: Ulisse
16:30-18:30 Session 21A: Poster Session We.D
Location: Le Ginestre
Experimental demonstration of ultrafast SiC MOSFET overload protection using embedded current and temperature sensors |
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs Through Infrared Thermography |
Reliability of SiC MOSFETs in the elastic-plastic deformation regime under fast power pulses |
High-speed Switching Operation of a SiC Power MOSFET at High-temperature Using a SiC CMOS Gate Driver Installed Inside a Power Module |
Photoluminescence analysis of heavy-ion-degraded SiC power MOSFETs |
Study of the bias driven threshold voltage drift of 1.2 kV SiC MOSFETs in power cycling and high temperature gate bias tests PRESENTER: Roman Boldyrjew-Mast |
A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter |
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs |
Advanced Stability Analysis based on Virtual Prototyping: Impact of Device Characteristics on Paralleling SiC power MOSFETs |
Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board |
Heavy-ion induced gate damage mechanisms in SiC trench MOSFETs |
250 m thick detectors for neutron detection: carrier lifetime, design, electrical characteristics, and detector performances. |
Ultra-thin (<1 µm) Silicon Carbide free-standing membranes as beam intensity and position monitors for soft x-ray beamlines |
Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations |
Investigation of potential impact of nitridation process on Single Event Gate Rupture tolerance in SiC MOS Capacitors |
16:30-18:00 Session 21B: Poster Session We.A
Location: Nettuno
Effects of Post-Annealing on Temperature dependent Electrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes PRESENTER: Young-Hun Cho |
Understanding the Material Loss in the Laser Based SiC Wafer |
Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones |
SmartSiCTM Substrates: A Boon to Drain Metallization Process |
Polarity effect on the heteroepitaxial growth of BxC on 4H-SiC by CVD |
Rapid growth of SiC single crystals using CVD-SiC block sources via physical vapor transport method |
Effects of Solution Properties on Growth Conditions of SiC Solution Growth |
GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT |
Physical Vapor Deposition of a-SiC thin films for optical applications |
3C-SiC on Si substrates through transformation of Si and C multilayers |
A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC |
Thermochromic properties of 3C-, 6H- and 4H-SiC polytypes up to 500°C |
Macro step bunching/debunching engineering on 4°-off 4H-SiC (0001) to control the BPD-TED conversion ratio by Dynamic AGE-ing® |
16:30-18:30 Session 21C: Poster Session We.B
Location: Foyer Sirene
Investigating the impact of plasma treatment on the characteristics of NiAl alloy contacts on heavily doped n-type 4H-SiC |
A Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET |
Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC |
Dicing process for 4H-SiC wafers by plasma etching using high-pressure SF6 plasma with metal masks |
Shape stability of electrochemically etched 4H-SiC cantilevers after high-temperature annealing |
Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization |
Reduction of the SiC trench sidewalls striations. |
Carbon control method in SIC MOSFET with Chlorine and Vth stability |
Shallow interface states in SiC MOS devices fabricated by oxidation of amorphous silicon thin films |
Efficient Nanotaper Edge Couplers in PECVD Amorphous Silicon Carbide for Integrated Photonics Applications PRESENTER: Yaoqin Lu |
Free-standing 3C-SiC p-type doping by Al ion implantation |
High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model |
Transient-enhanced diffusion of implanted aluminum in 4H-SiC |
Dopant activation comparison in phosphorus and nitrogen implanted 4H-silicon carbide |
High-speed planarization of GaN (0001) substrate using catalyst-referred etching enhanced with positive-biased photoelectrochemical oxidation |
A SiO2/SiC interface formed by direct bonding of SiO2 and SiC |
Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems |
TDDB in 4H-SiC power MOSFETs under positive and negative constant bias and constant current stresses |
Characteristics of Photoelectrochemical Oxidation Enabling High-efficiency Polishing of Gallium Nitride |
16:30-18:30 Session 21D: Poster Session We.C
Location: Foyer Ulisse
Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes |
Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals |
Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs PRESENTER: Maximilian Goller |
Compressed Sensing for High-Throughput, High-Sensitivity Inspection of Silicon Carbide Wafers |
Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging |
Analysis of Deep Level Traps in Post-annealed κ-Ga2O3/SiC Heterojunction Diode Grown by Mist-CVD PRESENTER: Tae-Hee Lee |
Charge carrier capture from prominent defect centers in 4H-SiC PRESENTER: Orazio Samperi |
Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers |
Development of Automated 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography |
Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer |
Interatomic potentials with ab-initio accuracy for defect and growth simulations in SiC |
Near interface defect decomposition during NO annealing analyzed by molecular dynamics simulations |
On the Relationship of Epitaxial Defects and Processing Parameters to Yield and Reliability of Gate Oxides on 4H-SiC |
Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques |
In-line charaterization of HPSI SiC wafers using high resolution surface photovoltage spectroscopy (HR-SPS) |
Monitoring of graphene properties in the process of viral biosensor manufacturing |
Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers |