Auditorium Sirene
Sessions
- Session 5 (Sep 18 08:30-09:00) Opening Ceremony
- Session 6 (Sep 18 09:00-10:30) Plenary I
- Session 7A (Sep 18 11:00-12:30) Devices 1: Novel devices and integration concepts
- Session 8 (Sep 18 14:00-15:20) Plenary II
- Session 9 (Sep 18 15:20-15:40) Invited Posters
- Session 12 (Sep 18 18:00-18:30) Industrial Keynote
- Session 13A (Sep 18 18:30-20:30) Industrial Session A
- Session 14A (Sep 19 08:30-10:30) Process 1: MOS I
- Session 15A (Sep 19 11:00-12:30) Process 2: MOS II
- Session 16A (Sep 19 14:00-16:00) Devices 2: SiC MOSFETs technology and modelling
- Session 18A (Sep 20 08:30-10:30) Devices 3: Bipolar operation in SiC technology & late news
- Session 19A (Sep 20 11:00-12:30) Process 3: Laser Processing
- Session 20A (Sep 20 14:00-16:00) Process 4: Implantation-based processing
- Session 22A (Sep 21 08:30-10:30) Process 5: Deposited Oxides
- Session 23A (Sep 21 11:00-12:30) Devices 4: Short circuit, avalanche and reliability
- Session 24A (Sep 21 14:00-16:00) Defects 3: Interface defects and carrier lifetime
- Session 26A (Sep 22 08:30-10:30) Devices 5: High performance SiC MOSFETs concepts
- Session 27A (Sep 22 11:00-12:30) Devices 6: Gate dielectric engineering
- Session 28 (Sep 22 14:00-14:40) Plenary III
- Session 29 (Sep 22 14:40-15:30) Awards and Closing Remarks