Ulisse

Session 1 (Sep 17 08:00-10:30) Tutorial Day 1-2
Session 2 (Sep 17 11:00-12:30) Tutorial Day 3
Session 3 (Sep 17 13:30-16:00) Tutorial Day 4-5
Session 4 (Sep 17 16:30-18:00) Tutorial Day 6
Session 7B (Sep 18 11:00-12:30) Defects 1: Extended defects in SiC materials I
Session 13B (Sep 18 18:30-20:30) Industrial Session B
Session 14B (Sep 19 08:30-10:30) Defects 2: Extended defects in SiC materials I
Session 15B (Sep 19 11:00-12:30) Quantum 1: Optical and electrical quantum techniques
Session 16B (Sep 19 14:00-16:00) Material 1: The SiC/liquid interface: challenges in controlling SiC growth from solution
Session 18B (Sep 20 08:30-10:30) Material 2: Epitaxial growth
Session 19B (Sep 20 11:00-12:30) Applications 1
Session 20B (Sep 20 14:00-16:00) Quantum 2: Single-photon sources and quantum sensing
Session 22B (Sep 21 08:30-10:30) Material 3: Surface processing and epi growth
Session 23B (Sep 21 11:00-12:30) Process 6: Metal/SiC interface
Session 24B (Sep 21 14:00-16:00) Applications 2
Session 26B (Sep 22 08:30-10:30) Defects 4: Novel defect characterization techniques
Session 27B (Sep 22 11:00-12:30) Material 4: Emerging growth technologies