ABSTRACT. Complementary MOS (CMOS) consisting of a pair of n- and p-channel MOSFETs has served as the unrivaled devices in Si LSIs owing to its low power dissipation. Through recent progress in SiC device technologies, intensive studies on SiC CMOS have started, demonstrating a great potential for small-scale ICs operating under harsh environment such as high temperature (~300°C). The low channel mobility, threshold voltage instability, and gate oxide reliability at high temperature must be overcome to make SiC CMOS exceptionally attractive. In recent years, SiC complementary JFETs (CJFET) consisting of n- and p-channel normally-off JFETs have been proposed. Although Si and GaAs CJFETs were reported in 1980s, the operating voltage VDD was limited to below 0.7 V due to the narrow bandgap of those materials. The wide bandgap of SiC enables CJFET operation at a standard VDD of 1.8 V, which is significantly lower than that of SiC CMOS (10–15 V), leading to much smaller power dissipation. SiC CJFET must exhibit stable operation at very high temperature compared with SiC CMOS because the devices are gate-oxide free. In this lecture, the basic principle of complementary devices, current status of SiC CMOS and CJFET, potential applications, and future challenges are reviewed.

ABSTRACT. This presentation will overview important new capabilities and benefits that next-generation higher temperature electronics promise for a variety of aerospace systems and missions. Initial aerospace infusions of higher temperature electronics to be discussed include jet engines and the prolonged robotic exploration of the Venus surface. Complete redesign of systems compared to prior conventional electronics practices would yield the most revolutionary benefits. However, the inherent higher risk and expense associated with new technology adoption will likely drive a more evolutionary technology infusion process, especially since flight qualification demands large safety margins and testing that ensures reliable operation for far longer than actual mission duration. SiC pn-junction based devices are inherently capable of the most durable operation at the highest application temperatures compared other transistor technologies, but such integrated circuits (ICs) will never achieve integration levels near today’s silicon ICs. Extreme temperature high-power devices will also be de-rated compared to room-temperature performance. While the high temperature market will always be small compared to the conventional temperature mass-market, compatibility and leveraging of existing foundry manufacturing is vital to the establishment of a sustainable high temperature electronics ecosystem sufficient to significantly improve aerospace systems.

ABSTRACT. The integration of 2D materials with SiC received an increasing scientific interest in the last two decades, starting from the first experimental reports on epitaxial graphene (Epi-Gr) grown by thermal decomposition of SiC surface [ ]. Owing to the low-in plane lattice mismatch, the growth of ultra-thin films of semiconducting 2H-MoS2 on SiC(0001) has been recently demonstrated by chemical vapor deposition (CVD) [ ] and pulsed laser deposition (PLD) [ ]. Furthermore, new forms of 2D materials commonly unstable under ordinary conditions, such as 2D-Nitrides (GaN, InN, AlN) [ ] and 2D-oxides (In2O3, Ga2O3) [ ] have been obtained by the confined heteroepitaxy at the Epi-Gr/SiC interface. The availability of a wide number of 2D materials with different electronic properties on the SiC platform clearly expands the range of its potential applications beyond the mainstream field of power electronics. This tutorial will provide an overview on the development of 2D materials integration with SiC and on the currently open challenges. Furthermore, perspective applications of 2D materials on SiC in high-frequency electronics, optoelectronics, quantum technologies, environmental and bio- sensing will be discussed.

ABSTRACT. If silicon carbide (SiC) is recognized nowadays as the material of choice for power applications due to notable electrical properties, SiC is also an outstanding candidate for micro and Nano-Electromechanical systems (MEMS/NEMS) thanks to its outstanding mechanical and chemical properties. SiC sensors and actuators may fill the demand in harsh environment (aerospace, nuclear, …) or automotive fields. In this presentation, we will introduce what MEMS/NEMS means and their field of applications. We will review the techniques that have to be applied to obtain the MEMS, in particular surface and bulk micromachining. We will see how 3C-SiC and 4H-SiC can be used to fabricate such MEMS/NEMS devices and present various applications such as high frequency actuation or pressure and gas sensing. We will conclude on the future applications for MEMS that can be achieved using the great material SiC!

ABSTRACT. TBD

ABSTRACT. Starting in 2005 the USF SiC Group started to study the biocompatibility of various SiC single-crystalline forms, known as polytypes, and our research was aimed at both understanding the potential of SiC for biomedical applications and to understand why discrepancies in the literature existed: some reports stating that SiC was cytotoxic and other biocompatible. We have since this time studied various forms of SiC, mainly 3C-, 4H-, 6H- and amorphous SiC to various biological systems as skin and connective tissue, blood platelets, neurons, etc. We have also compared the in-vivo response of tissue (wild type mice) to 3C-SiC and Si and have found a very promising null response for 3C-SiC, at least for 30 days in-vivo. Additional work has shown similar results for a-SiC coated probes thus motivating the development of implantable biomedical devices using SiC as the requisite materials. At the University of South Florida a team of electrical engineers and neuroscientists have been developing silicon carbide (SiC) semiconductor devices for use as implantable neural interfaces (INIs). This tutorial will discuss both the state of the art of SiC biotechnology as well as review other research in Prof. Saddow’s laboratory in the area of biomedical technology.