Program for Tuesday, September 19th: Talk View

PROGRAM FOR TUESDAY, SEPTEMBER 19TH: TALK VIEW

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8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:30-09:00

Evaluation and Optimization of the MOS Interface in SiC Power DMOSFETs (invited paper)

James A. Cooper, Dallas Morisette, Brian Rummel

09:00-09:20

Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs

Xilun Chi, Keita Tachiki, Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto

09:20-09:40

Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance using H2+NO POA Treatment for SiC Power

Chand et.al

09:40-10:00

Thermal oxidation of 4H-SiC(0001) surface in a pure CO2 ambient

Ryuta Deguchi, Takuji Hosoi

10:00-10:20

Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C–V and first-principles

Sometani, Nishiya, Kondo, Inohana, Zeng, Hirai, Okamoto, Matsushita, Umeda

08:30-09:00

The Role of Defects on SiC Device Performance and Ways to Mitigate Them (invited paper)

H. Das, J. Justice, S. Sunkari, P. Kostelnik, T. Novak, S. Kochoska, D. An

09:00-09:20

Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with Screw and Mixed

Mahadik, Dudley, Raghothamachar, Chen, Stahlbush, Hinojosa, Lelis, Sung

09:20-09:40

Effect of Etching Chemistry on Quantification of Dislocation Densities in n+ 4H Silicon Carbide

R. Rengarajan, A. Pillai, P. Wu, L. Nguyen, X. Xu, A. Burk, G. Ruland

09:40-10:00

Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray

Cheng et.al

10:00-10:20

Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer

Shunta Harada, Yasutaka Matsubara, Kenta Murayama

10:30-11:00 Coffee Break

11:00-11:20

High-mobility SiC p-channel MOSFETs on nonpolar faces

Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto

11:20-11:40

Increasing mobility in 4H-SiC MOSFETs with deposited oxide by in-situ nitridation of SiC surface

Yakut, Roy, Whitworth, Alexander, Gryglewicz, Olsen, Vasilevskiy, O'Neill

11:40-12:00

SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure

H. Nagasawa, Y. Cho, M. Abe, T. Tanno, M. Musya, M. Sakuraba, Y. Sato, S. Sato

12:00-12:20

Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2

Hiroki Fujimoto, Takuma Kobayashi, Yu Iwakata, Takayoshi Shimura, Heiji Watanabe

11:00-11:30

Vanadium in SiC: the spin for telecom quantum networks (invited paper)

Michael Trupke

11:30-11:50

Silicon carbide as a host of color centers emitting at telecom bands

D. Shafizadeh, H. Abe, T. Oshima, I. Abrikosov, S. Tien Nguyen, I. Ivanov

11:50-12:10

Controlling the properties of single photon emitters at SiO2/SiC interfaces by oxidation and

T. Nakanuma, K. Tahara, K. Kutsuki, T. Shimura, H. Watanabe, T. Kobayashi

12:10-12:30

Carbon cluster emitters in silicon carbide

Pei Li, Péter Udvarhelyi, Song Li, Bing Huang, Adam Gali

12:30-14:00 Lunch

14:00-14:30

Pushing SiC to its limit: examining the advances in SiC MOSFET technology that will drive cost reduction (invited

Gammon et.al

14:30-14:50

1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On

T.-T. Pham, J. Franchi, S. Kang, K. Park, D. Choi, M. Domeij

14:50-15:10

Calibration of Aluminum ion implantation Monte-Carlo model for TCAD simulations in 4H-SiC

A. Scholze, A. Suvorov, D. Lichtenwalner, S. Rogers, H. Dixit, S.-H. Ryu

15:10-15:30

Advanced Design Concepts for Next Generation High Voltage SiC MOSFETs with Improved Electrical

Rahimo et.al

15:30-15:50

Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs

H. Dixit, A. Scholze, D.J. Lichtenwalner, J. Kim, K. Han, S.-H. Ryu

14:00-14:30

The SiC/liquid interface: challenges in controlling SiC growth from solution (invited paper)

Didier Chaussende, Takeshi Yoshikawa, Sakiko Kawanishi, Takeshi Mitani

14:30-14:50

Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth

H. Zhou, Y. Fukami, H. Miura, K. Kutsukake, S. Harada, T. Ujihara

14:50-15:10

Influence of the size distribution of the SiC powder source on the shape of the crystal growth interface during PVT growth of 4H-SiC

Schultheiss, Ihle, Usseglio Nanot, Bonamoni, Callejo Munoz, Hammer, Wellmann

15:10-15:30

Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG

Daiki Shimoda, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

15:30-15:50

Development of Precise Simulation and Machine Learning Models for 4H-SiC Bulk Growth by HTCVD

S. Matsuzawa, F. Fujie, K. Betsuyaku, K. Kutsukake, H. Tsuchida

16:00-16:30 Coffee Break

16:30-18:30

Theory of Optically Detected Magnetic Resonance of V(Si) in 6H-SiC — A Quantum Sensor of Magnetic

David Fehr, Hannes Kraus, Corey J. Cochrane, Michael Flatte

Optical ionization of qubits and their silent charge states

Michel Bockstedte, Maximilian Schober

Silicon carbide diffraction imaging of defects and deterministic nanoscale quantum VV0 spin-defect

Delegan, Whiteley, Zhou, Bayliss, Titze, Bielejec, Holt, Awschalom, Heremans

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Caspar van der Wal

Evaluation of the potential of PL5-7 centers in SiC for spin-based quantum sensing

Raphael Wörnle

Spin-orbit coupling of color centers for quantum applications

Mirjam Neubauer, Maximilian Schober, Witold Dobersberger, Michel Bockstedte

Plasmonic Ag nanoparticles on 4H-SiC for sensing application

V. Cantaro, A. Sciuto, A. Brancato, G. Compagnini, G. D'Arrigo

Effect of doping type and concentration on optical and spin properties of silicon vacancies in SiC

Yamazaki et.al

Accurate analysis of leakage characteristics of SiC (1-100) MOS devices over a wide temperature

A. Suzuki, T. Kobayashi, M. Sometani, M. Okamoto, T. Shimura, H. Watanabe

Suppression of the reverse biased leakage current of junction barrier Schottky diode by low-temperature post-Al-implantation annealing and sacrifice oxide

T. Lin, S. Li, L.-P. Ho, A. Kuznetsov, H.N. Lee, T. Chau, F.C.-C. Ling

Feasibility study of monitoring polychromatic X-ray beams at synchrotron radiation sources using novel Silicon Carbide

Camarda et.al

Characterizations of Novel Silicon Carbide sensors for dosimetry and monitoring of electron UHDR beams for FLASH

Camarda et.al

16:30-18:30

Addition of transition metal into CMP slurry for forming ultra-flat SiC crystal surface

Kim, Ryu, Lee, Kyun, Seo, Ku, Lee, Choi, Kim, Shin, Jung, Kim, Lee, Lee

High-quality SiC crystal growth by temperature gradient control at initial growth stage

Lee, Lee, Park, Choi, Kim, Ku, Na, Lee

The role of air-pocket in crucible structure for high quality SiC crystal growth

Lee, Kim, Choi, Park, Kim, Ku, Lee, Lee

Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC.

Prudkovskiy et.al

Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy

D. Raciti, R. Anzalone, M. Isacson, N. Piluso, A. Severino

4H-SiC crystal growth using recycled SiC powder source

Lee, Lee, Choi, Park, Kim, Ku, Na, Lee

Investigating the Influence of Post-Deposition Annealing on the Electrical Properties of Lithium Phosphate Deposited on Silicon

Lee, Moon, Cho, Lee, Schweitz, Kim, Oh, Shin, Park, Lee, Koo

Resistivity as a witness of local crystal growth conditions

Andrey Soukhojak, Gilyong Chung

Characterization of SiC films epitaxially grown by MOCVD with varying nitrogen doping levels on 4H-SiC

M.J. Kang, Y.J. Park, S. Kim, D.I. Son, C.H. Shin, B.-G. Park, H.-K. Shin

Suppressing the memory effect in Al doped 3C-SiC grown using chlorinated chemistry

G. Colston, A. Renz, K. Perera, P. Gammon, M. Antoniou, P. Mawby, V. Shah

Masterization of poly-SiC characterization and properties for SmartSiCTM substrates enabling high performance power

Biard et.al

Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries

Tomas Novak, Hana Vemolova, Radim Ctvrtlik, Radim Spetik

A novel contactless SiC wafer planarization processing after mechanical slicing by dynamical thermal annealing

K. Toda, D. Kakutani, D. Dojima, Y. Nakajima, H. Mihara, T. Kaneko

The Rise of 2D SiC Semiconductors

Sakineh Chabi, Nishan Shreshta, Luis Emilio Payan Ramirez

Preparation of Millimeter Scale 6H-SiC Single Crystal by Carbothermal Reduction: From the DFT Calculation to

Huan Lin, Bin Li, Junhong Chen

Safe handling of viscous byproduct formed in exhaust tube by halide CVD for epitaxial growth of silicon carbide

I. Mizushima, K. Kurashima, Y. Moriyama, N. Ikeya, K. Suzuki, M. Yajima

Innovative slurry for high removal rate single step SiC CMP enabling improved polishing throughput.

Florian Tendille, Long Hui Bui, Chung Lun Kuan, Renjie Zhou, Bruno Tolla

16:30-18:30

Enhancement of 1700V 4H-SiC P-shielding Trench Gate MOSFET using Multi-Epitaxial layer

T.-J. Nam, D.-H. Kim, J.-H. Jeon, C.-H. Yang, T.-Y. Kang, S. Kyoung

Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure

K. Lee, J. Choi, Y. Seo, K. Park, M. Domeij, F. Allerstam

The first optimisation of a 16 kV 4H-SiC N-type IGCT

Q. Cao, P. Gammon, A.B. Renz, M. Antoniou, P. Mawby, N. Lophitis

Design of Monolithically Integrated Temperature Sensors in Silicon Carbide VJFETs

Finn Monaghan, Antonio Martinez, Mike Jennings

Dynamic Bias-Temperature Instability Testing in SiC MOSFETs

E. Martino, S. Kicin, Y. Zong, G. Romano, R. Burkart, A. Mesemanolis, S. Wirths

Gate Ringing and Dynamic Capacitance of SiC MOSFETs

Yeonju Lee, Hyemin Kang

Demonstration of 800 °C SiC MOSFETs for Extreme Temperature Applications

Emad Andarawis, David Shaddock, Tammy Johnson, Shubhodeep Goswami, Reza Ghandi

Improved blocking capability of 1.2 kV SiC trench MOSFETs using trenched source and buried p+ layer

Y. Park, J. Song, J. Lee, J. Choi, S. Kwon, O. Seok

Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET

Boccarossa, Maresca, Borghese, Riccio, Breglio, Irace, Salvatore

Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface

S. Greenhorn, K. Zekentes, E. Bano, V. Stambouli-Sene, G. Pound-Lana, J. Boussey

Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs

K. Melnyk, L. Zhang, P.M. Gammon, A.B. Renz, M. Antoniou

Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC)

Planson, Tournier, Bevilacqua, Sonneville, Brosselard, Moulin, Phung, Godignon

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Brosselard et.al

Raman and Kerr frequency comb in a 4H-silicon-carbide on insulator based microresonator

A.A. Afridi, Y. Lu, X. Shi, R. Wang, J. Li, Q. Li, H. Ou

Channel density design guidelines for the transient characteristics of SiC trench gate MOSFETs

Shinichi Kimoto, Ryosuke Iijima, Shinsuke Harada

Analysis and Optimization of the Super Junction SiC MOSFET Parasitic Capacitances

Chih-Jung Chang, Kung-Yen Lee, Wan-Ting Hsieh, Chien-Neng Huang, Chun-Ju Chen

Fabrication of wafer-level vacuum-packaged 3C-SiC resonant microstructures grown on <111> and <100>

S. Sapienza, L. Belsito, M. Ferri, M. Zielinski, F. La Via, A. Roncaglia

Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC

Scalisi et.al

16:30-18:30

Controlling directionality of emission from quantum defects through microstructures in Silicon

Erlend Ousdal, Marianne Bathen, Anne Moe, Anna Rongve, Lasse Vines

Combustion synthesis of SiC towards preparation of quantum sensors

Sarah Morais Bezerra, Dávid Beke, Ádam Gali

Determination of SiC MOS interface roughness from TEM image by using machine learning

Hironori Yoshioka, Tomonori Honda

Silicon Carbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production

Rossitto, Cannizzaro, di-Salvo, Battista, Pearl, Miller, Nicolosi, Laudani

Confocal three-dimensional characterization model of silicon vacancy prepared by helium ion

Ying Song, Zongwei Xu, Rongrong Li, Mathias Rommel, Georgy V. Astakhov, Jun Xu

Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface

Yoshitaka Nishihara, Tsubasa Shiono, Yuichiro Mabuchi, Koji Kamei

Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal

P. Wimmer, C. Kranert, R. Weingärtner, C. Reimann, J. Friedrich

Practical Improvement of Noncontact Production Monitoring of Doping in SiC wafer with Extended Epilayer

A. Savtchouk, M. Wilson, J. Lagowski, B. Schrayer, C. Almeida, L. Gutierrez

Non-Destructive Quantification of Sub-Surface Damage Depth Distribution in 4H-SiC Wafers Using Laser Light

Daichi Dojima, Koki Shigematsu, Kaito Tayake, Kohei Toda, Tadaaki Kaneko

Dual configuration of shallow acceptor levels in 4H-SiC

Bathen, Kumar, Ghezellou, Belanche, Vines, Ul-Hassan, Grossner

Electrical charge transition levels in proton-irradiated 4H silicon carbide: towards the identification of the TS color

Zhengming Li, Johannes Lehmeyer, Heiko Weber, Michael Krieger

Crystal originated defect monitoring and reduction in production grade SmartSiC engineered

Cela et.al

High-temperature reorganization behavior of porous 4H-SiC thin foils

Perazzi et.al

Carrier Compensating Center Density in N-type Layers Formed by Ion Implantation into High-Purity Semi-Insulating 4H-SiC

Qimin Jin, Chansoon Koo, Mitsuaki Kaneko, Tsunenobu Kimoto

Properties of Z1 and Z2 Defects in 4H-SiC Revealed by Capacitance Transient Spectroscopy and Photoinduced Transient Spectroscopy Using the Laplace-Transform

P. Kaminski, R. Kozlowski, J. Zelazko, T. Ciuk, K. Kosciewicz

Scanning tunneling luminescence studies of step-bunched 4H-SiC surfaces

Rowe, Alyabyeva, Richard, Peretti, Johnson, Ferro, Jousseaume

DLTS and MCTS analysis of defects in 4H-SiC induced by neutron irradiation

Belanche Guadas et.al