Program for Monday, September 18th: Talk View

PROGRAM FOR MONDAY, SEPTEMBER 18TH: TALK VIEW

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8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

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20:30

08:30-09:00 Opening Ceremony

09:00-09:40

Technology and Business Development of SiC MOSFET: Retrospect and Prospect

Kazuhide Ino

09:40-10:20

Accelerating SiC Mass Commercialization

Victor Veliadis

10:30-11:00 Coffee Break

11:00-11:20

Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors

M. Tsutsumi, T. Meguro, A. Takeyama, T. Ohshima, Y. Tanaka, S.-I. Kuroki

11:20-11:40

500°C Operation of 4H-SiC SRAM

T. Kai, K. Kojima, A. Takeyama, T. Ohshima, Y. Tanaka, S.-I. Kuroki

11:40-12:00

Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power

Makhoul et.al

12:00-12:20

Normally-off 1200V Silicon Carbide JFET Diode with Low VF

K.K. Cho, C. Park, Y. Kim, K. Park, F. Allerstam

11:00-11:20

Study on quantification of correlation between current density and UV irradiation intensity, leading to bar shaped 1SSF

Yasuyuki Igarashi, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

11:20-11:40

3-dimensional observation of dislocations in 4H-SiC using focused light birefringence

Masashi Kato, Hisaya Sato, Tomohisa Kato, Koichi Murata, Shunta Harada

11:40-12:00

Wafer-level identification of stacking faults in 4H-SiC epilayers and accurate analysis of overlaid complex structures by high-speed photoluminescence and

M. Na, W. Bahng, H.W. Kim, H. Jung, C. Oh, D. Jang, S.-K. Hong

12:00-12:20

Estimation of Influence on Carbon Vacancy regarding 4H-SiC Substrate grown by HTCVD method

Uehigashi, Okamoto, Horiai, Fujibayashi, Kanda, Kanemura, Tsuruta

12:30-14:00 Lunch

14:00-14:40

The golden age of SiC: Turning the potential of SiC into opportunities for energy conversion

Mario Saggio

14:40-15:20

SmartSiC™: a greener, faster and better technology for SiC

Christophe Maleville

15:20-15:40 Invited Posters

15:40-16:00 Coffee Break

16:00-18:00

SiC crystal growth behavior via physical vapor transport method dependent on mass transport of sublimed vapor in the SiC source (invited

J.-H. Sun, J.-H. Park, Y.-J. Shin, S.-Y. Bae, C.-M. Kim, W.-J. Lee, S.-M. Jeong

Peculiar behaviors of the step-terrace structure formed by single bilayer steps on the (000−1)

Shunsuke Asano, Yuta Inoue, Koki Kitahara, Noboru Ohtani

Quality improvement of SiC substrate surface with using non-abrasive CMP slurry

Lee, Park, Lee, Lee, Seo, Ku, Lee, Choi, Kim, Shin, Jung, Kim, Na, Lee

Evidence of twin mediated growth in the CVD of <110> oriented polycrystalline SiC

Yann Gallou, Marie Dubois, Alexandre Potier, Didier Chaussende

Effect of the Source Composition on PVT SiC in Graphite and TaC Coated Crucibles

Alex Galyukov, Daria Zimina

Growth of 6 inches V-doped semi-insulating SiC single crystals using V-doped SiC powder as a source via PVT

Kwon, Kim, Kim, Choi, Kim, Ku, Jang, Lee, Shin

Design optimization of insulating materials for 4H-SiC crystal Ingot growth

Kim, Lee, Park, Choi, Kim, Ku, Lee, Lee

Dislocation behaviors during the initial stage of physical vapor transport growth of 4H-SiC on an off-oriented seed

Shungo Tamura, Yuzo Takeda, Noboru Ohtani

Temperature-Dependent Hall Coefficient in Band Conduction Region for Heavily Al-Doped 4H-SiC

Matsuura et.al

Low-resistivity (1mOhm-cm) 3C-SiC grown by hot-filament CVD

Bart Van Zeghbroeck, Francisco Gomez, David Bobela

Channeling, Lateral Range and Diffusion Simulation Capabilities for Ion Implantation Recipe Design

Jeremy Turcaud

A Meister solution for optimized grinding of laser split silicon carbide surfaces

Markus Pavlekovic

Submicron Hyperion Diamond for Silicon Carbide Wafer Polishing

Timothy Dumm, Jacob Palmer, Thomas Draskovic

HYPREZ Wafering Solutions: A Novel Approach for Grinding to Clean CMP Solution

Andrew Hartmann, Giho Lee, Salman Kassir

Comparative optical metrologies of implanted SiC wafers

E. Najbauer, L. Balogh, J. Szivos, S. Biro, P. Basa, Z. Zolnai, A. Pongracz

Keypoints for the development of polycrystalline SiC as quasi-substrate for the fabrication of SiC

Y. Gallou, M. Dubois, A. Potier, G. Chichignoud, C. Hassant, D. Chaussende

High-temperature α-spectroscopy with 4H-SiC based sensors

Camarda, Sangregorio, Carulla, Dressler, Steinegger, Tiebel, Wilson

Vertical current transport in monolayer MoS2 heterojunctions with 4H-SiC fabricated by sulfurization of ultra-thin MoOx

Panasci, Schilirò, Cannas, Agnello, Koos, Nemeth, Pécz, Roccaforte, Giannazzo

16:00-18:00

Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy Patrick Fiorenza (invited

Fiorenza et.al

Carrier transport mechanism of NiAl contacts on n-type 4H-SiC

Kim, Lim, Park, Kang, Han, Shin, Park, Kang, Shin

Suppressing leakage currents in 3C-SiC/Si devices through the fabrication of suspended structures

G. Colston, S. Pfeffer-Matthews, A. Renz, P. Gammon, M. Antoniou, V. Shah

Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in

Kota Sakai, Norman Boettcher, Susanne Beuer, Mathias Rommel

Development of silicide formation process on p-type SiC by laser annealing

Kumiko Konishi, Naoki Watanabe, Hiroyuki Okino, Akio Shima

Effect of substrate heating on low contact-resistance formation by excimer laser doping for 4H-SiC

Y. Kakimoto, T. Yasunami, K. Katayama, D. Nakamura, T. Goto, H. Ikenoue

Bilayer metal oxide high-κ dielectrics for high-performance SiC power MOSFETs

Bolat, Fernandez, Ingenito, Romano, Alfieri, Mihaila, Arango

Lift-Off Process for Patterning of Sputter-Deposited Thick Metal Stacks Suitable for High Temperature Applications on

Alesa Fuchs, Kevin Brueckner, Oleg Rusch

Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC

Chia-Hua Wang, Li-Jung Lin, Chia-Lung Hung, Yi-Kai Hsiao, Bing Yue Tsui

The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to n-type 4H-SiC

Yeo, Voo, Bera, Singh, Chand, Chung, Ranjan, Ho, Lim, Gong

Improving HfO2 thick films for SiC Power Devices by Si, Y and La Doping

Sandra Krause, Thomas Mikolajick, Uwe Schroeder

Spectroscopic investigation of the secondary electron doping contrast on 4H-SiC

Maximilian Moser, Gregor Pobegen, Jürgen Smoliner

Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface

Masante et.al

Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition

Tae-Hyeon Kil, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in

Jeremy Turcaud, Dong Lee, Dennis Rossman, John Schuur, Robert Chebi

Demonstrating SiC in Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET

Jones, Jennings, Guy, Mitchell, Evans, Monaghan, Ashraf, Riddell, Croot, Bolton

Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC

Jimin Lee, Daeeun An, Chungjung Kim

Hydrogen pressure dependence of step height on vicinal carbon-face 4H-SiC during in-situ etching

H. Sazawa, Y. Ishida, S. Kuboya, H. Umezawa, Y. Tanaka, T. Kato

First demonstration of SiC transistor utilizing 2D electron gas in 3C/4H-SiC heterostructure

H. Sazawa, S. Kuboya, H. Umezawa, T. Kato, Y. Tanaka

SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure

Youngbin Im, Inkyu Kim, Seongphil Son

16:00-18:00

Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique (invited poster)

Atsuhiro Akiba, Noriyuki Iwamuro, Hiroshi Yano

Threshold voltage variation of SiC trench MOSFETs during TDDB stress

Avramenko, Marcuzzi, De Schepper, Cano, Geenen, De Santi, Moens, Meneghini

Investigation of electrical performance degradation of 4H-SiC MOSFETs under high temperature and high gate bias

Inho Kang, Junghun Kim, Jeong Hyun Moon, Jae Hwa Seo, Hyoung Woo Kim

Influence of material properties on ruggedness evaluation of package architectures for SiC power

Habenicht, Funke, Birkoben, Liguda, Fan, Dong, Garete, Li

Excellent Avalanche Capability in SiC Power Device With Positively Beveled Mesa Termination

Y. Liu, Y. Zhou, H. Yuan, Q. Song, X. Tang, L. Sun, Y. Zhang

Investigation of threshold voltage instability and bipolar degradation in 3.3 kV SiC-MOSFETs with embedded SBD and intrinsic body

Hithiksha Krishna Murthy, Jang-Kwon Lim, Mietek Bakowski

Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters

Kochoska, Franch, Maslougkas, Domeij, Pham, Sunkari, Justice, Das

Avalanche ruggedness of 1.7 kV SiC MOSFETs for auxiliary power supply in motor drives

Enea Bianda, Elena Mengotti, Jimmy Ingman, Joni Jormanainen

Failure-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Electro-Thermo-Mechanical

I. Kovacevic-Badstuebner, S. Race, N. Luethi, M. Nagel, U. Grossner

Gate Oxide Instability in Commercial SiC MOSFETs under Oxide Screening Electric Fields Stress

Limeng Shi, Anant Agarwal

Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress

Yuya Enjoji, Noriyuki Iwamuro, Hiroshi Yano

Power cycling of SiC MOSFETs packaged in different module’s solutions

Mengotti, Kovacevic-Badstuebner, Bianda, Baumann, Kenel, Natzke, Race, Grossner

Analysis of TID effects through gamma-ray irradiation experiments

Chaeyun Kim, Gukhwa Jeon, Hyowon Yoon, Yeongeun Park, Dong-Seok Kim, Ogyun Seok

Total ionizing dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

Jae Hwa Seo, Young Jun Yoon, Young Jo Kim, Hyoung Woo Kim

16:01-18:00

Density control of single-photon sources formed at a SiO2/SiC interface (invited poster)

Mitsuaki Kaneko, Hideaki Takashima, Shigeki Takeuchi, Tsunenobu Kimoto

SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors

T. Okamura, T. Meguro, A. Takeyama, T. Ohshima, Y. Tanaka, S.-I. Kuroki

Gate resistance integration in SiC MOSFETs: performance simulations under different implementation

Pulvirenti, Cavallaro, Cascio, Raffa, Salvo, Sciacca, Guarnera, Zanetti, Saggio

A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs

T. Hatakeyama, H. Hirai, M. Sometani, D. Okamoto, M. Okamoto, S. Harada

A 1200V Low Forward Voltage Drop Silicon Carbide Diode with Trenched Junction-Pinched Barrier Rectifier Structure

F.-J. Hsu, C.-T. Yen, H.-T. Hung, T.-F. Chang, J.-W. Hu, C.-F. Huang

Investigation of Parasitic PN Junction Turn-on in 4H-SiC TMBS with P-Shielding

Jia-Wei Hu, Yi-Ching Chan, Fu-Jen Hsu, Chih-Fang Huang

Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching

Yui Nagase, Shuhei Nakata, Takaaki Tominaga

Stress fields distribution and simulation in 3C-SiC resonators.

V. Scuderi, A. Muoio, S. Sapienza, M. Ferri, L. Belsito, A. Roncaglia, F. La Via

Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-on

Q. Lou, X. Li, Z. Yang, L. Li, S. Li, X. Deng, B. Zhang

Study of parasitic effects in SiC MOSFET switching circuits by comparing measurement and simulation

Takamasa Arai, Ryo Takeda, Tom Neville, Mike Hawes

A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback

V. Terracciano, A. Borghese, M. Boccarossa, V. d'Alessandro, A. Irace

Frequency investigation of SiC MOSFETs C-V curves with biased Drain

I. Matacena, L. Maresca, M. Riccio, A. Irace, G. Breglio, S. Daliento

Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor

Michael Schraml, Mathias Rommel, Niklas Papathanasiou, Tobias Erlbacher

Single event effects in 3.3 kV 4H-SiC MOSFETs due to MeV ion impact

Z. Yuan, J.-K. Lim, A. Metreveli, H. Krishna Murthy, M. Bakowski, A. Hallén

Accuracy of Split C-V Characterization of SiC Power MOSFETs

Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner, Ulrike Grossner

Fabrication of 6500 V SiC MOSFETs and Applications in the Solid State Transformer

Yang, Lv, Dong, Tang, Yang, Li, Sang, Yu, Xu, Zhao, Niu, Liu, Wu, Wei, Zhang

High Accuracy SPICE Model of 3rd Quadrant Behavior on Both Planar and Trench SiC Power MOSFET

T.-F. Chang, F.-J. Hsu, C.-T. Yen, H.-T. Hung, J.-W. Hu, C.-F. Huang

Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in

Mohamed Torky, T. Paul Chow

Coupled non-destructive methods, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power

Vuillermet, Sédilot, Bercu, Deturche, Usureau, Béal, Lazar

A Voltage Adjustable Diode Integrated SiC Trench MOSFET With Barrier Control Gate

Songjun Li, Xiaochuan Deng, Xu Li, Xuan Li, Yi Wen

18:00-18:30

Driving Clean Energy Adoption and Sustainability: The Pivotal Role of Silicon Carbide Power Electronics

Elif Balkas

18:30-18:35

LPE + ASM – Combination powers SiC growth

Silvio Preti

18:35-18:40

SiC epi fabrication – 150 & 200 mm G10-SiC epitaxy platform

Franck Wischmeyer

18:40-18:45

Trace element analysis of purified graphite material

Franz, Gaeb-Delvos, Wolter, Hoffmann, Latzel, Weishaupt, Chodura

18:45-18:50

4H-SiC substrates using the Fast Sublimation Growth Process

Johan Ekman

18:50-18:55

Screen UV Laser Anneal Technology for next generation of SiC Devices

Louis Thuries

18:55-19:00

INNOVATION OF DEVICE AND 8-INCH WAFER AS GAME CHANGERS OF SIC MARKET

Poshun Chiu, Milan Rosina, Taha Ayari, Ezgi Dogmus

19:00-19:05

Noncontact High Throughput, High Precision, Electrical Metrology for Wide Bandgap Semiconductors based on Corona Charge Photoneutralization

Wilson, Almeida, Schrayer, Shekerov, Savtchouk, Wilson, Polisski, Lagowski

19:05-19:10

WBG Semiconductor Industry Status and Prospects

Sammy Li, Jinlong Li

19:10-19:15

In-line characterization of SiC epitaxial layers using high resolution surface photovoltage spectroscopy

Thomas Clausen, Nadine Schüler, Kay Dornich

19:15-19:20

Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance

Drouin, Simon, Schwarzenbach, Zielinski, Radisson, Guiot, Cela, Chapelle, Biard

19:20-19:25

SmartSiC™ substrate: increasing SiC MOSFETs current density from device to module level

E. Guiot, F. Allibert, J. Leib, T. Becker, W. Schwarzenbach, T. Erlbacher

19:25-19:30

How to improve power device / module development efficiency

Takamasa Arai, Ryo Takeda, Tom Neville, Mike Hawes

19:30-19:35

Advanced Carbon film for high-voltage power, high-performance SiC devices

Megalini et.al

19:35-19:40

650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS,ON of 1.92 mΩ-cm2

J. Park, S. Sundaresan, A. Agarwal, V. Mulpuri, N. Walsh, S. Smith

19:40-19:45

Diamond Grit Size Effects on Grinding of Silicon Carbide Wafers

Taewook Hwang, Shuo Cui, Alex Temperelli, Xavier Beck

19:45-19:50

Centrotherm High Temperature Annealing and Oxidation Furnaces

Patrick Schmid

19:50-19:55

Rapid industrialization of SiC trench technologies

J. Alsmeier, K. Heyers, S. Schwaiger, B. Marchetti, C. Förster

18:30-18:35

Atomic Diffusion Bonding using nitride films and oxide films

Saito, Shimatsu, Makita, Suzuki, Kozuka, Muraoka, Uomoto, Hukunaga

18:35-18:40

High-speed, high-resolution, non-contact resistivity and anomaly imaging of boules and wafers

Marcus Klein, Senthil Vinodh, Bo Chen

18:40-18:45

Novel Silicon Carbide (SiC) Chemical Mechanical Planarization (CMP) Solutions for Enhanced Performance and Cost of

Singh, Alety, Singh, Mahadev, Gudi, Charns, Freeman, Demal

18:45-18:50

Ion Implantation Application Overview and Product Requirements for SiC Wafers and Devices

W. Zou, S. Charnvanichborikarn, K. Shim, H. Gossmann, W. Bogiages, S. Krause

18:50-18:55

How process scaling offers maximum flexibility of SiC wafering along the complete process chain

Malte Mueller, Ulrich Ising, Kevin Rachor

18:55-19:00

Sonic Lift-off to Enable Substrate Reuse of Wide Bandgap Semiconductors

Pablo Guimera Coll, Taylor Black, Arno Merkle, Lara Bathurst, Mariana Bertoni

19:00-19:05

Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material

Jeffrey Gum, Martin Nobs, Michael Egeter

19:05-19:10

Analysis of Key Factors in High Aspect Ratio Etching of SiC Gate Trench with SF6/O2 Inductively Coupled

Anton Kobelev, Andrey Smirnov, Daria Zimina

19:10-19:15

New Generation SiC MPS Diodes with Low Schottky Barrier Height

Aditi Agarwal, Siddarth Sundaresan, Jaehoon Park, Vamsi Mulpuri, Kailun Zhong

19:15-19:20

Total SiC Polishing Process Optimization for Cost of Ownership

Caroline Watt, Michael Max, Christian Jentgens, William Gemmill

19:20-19:25

Rapid Diamond Mechanical Polishing of SiC Substrates using the IRINO-PRO-C Structured Composite Polishing

H. Willers, K. Rachor, C. Jentgens, M. Max, W. Gemmill, R. Bollina

19:25-19:30

Enabling Next Generation WBG Semiconductors Using CVD Technology

Michael Macmillan MacMillan, Kevin Long

19:30-19:35

Testing challenges for latest SiC devices

Higor Rodrigues Batagin, Sara Monfreda

19:35-19:40

Answers to SiC wafer and device production challenges

Adalbert Goj, Roy Klemm, Michael Sonntag

19:40-19:45

SiC Power Device Manufacturing “EFIITRON” ion implanter for Advanced SiC Drift Zone Doping

Michael Rueb, Constantin Csato, Florian Krippendorf, Hitesh Jayaprakash

19:45-19:50

Improvement of SiC film thickness and wafer thickness uniformity by ion beam trimming

T. Dunger, A. Schweren, S. Günther, M. Nestler, M. Zeuner