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Silicon Carbide MOSFETs: A Device Designer's Perspective

Latest Power Electronics Technology with SiC Devices to Realize a Carbon-Neutral Society

Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth (abstract)

Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation (abstract)

SiC Plasma Dicing for Future High Yield Die Singulation (abstract)

Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate (abstract)

Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla sensitivities (abstract)

Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC (abstract)

Simultaneous magnetic field and temperature sensing in SiC devices (abstract)

Towards identification of single photon emitters and electro-optical characterization of defects at the 4H-SiC/a-SiO2 interface (abstract)

Heavy ions radiation damage on silicon and silicon carbide detectors (abstract)

Influence of Gold Nanoparticle Distribution on the Performance of Self-powered Silicon Carbide Ultraviolet Photodetector (abstract)

SiC CMOS Active Pixel Sensors with Embedded UV Photodiode (abstract)

Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification (abstract)

Review for Resonac’s SiC Epiwafer Development (abstract)

Silicon Carbide Epitaxial Growth Performance on 350um and 500um Thick 200mm Substrates (abstract)

Basal Plane Dislocation Mitigation via Annealing and Growth Interrupts (abstract)

Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth (abstract)

The Silicon Carbide FinFET – a milestone concept in power electronics (abstract)

ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET (abstract)

Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency (abstract)

Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs (abstract)

Process gas control for growth of high-resistant HPSI-SiC crystal (abstract)

A Novel Approach for the Volume Production of Wide-Bandgap Semiconductor (abstract)

Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications (abstract)

200mm n-type SiC Uniform Low BPD in Their Whole Crystal Technology (abstract)

Advanced diagnostics for rapid process development (abstract)

Optimization of heat transfer design for high quality 4H-SiC ingot growth (abstract)

Study on growth of 8inch SiC substrate with ultra-low dislocation density (abstract)

Active planarization method from rough surface of 4º-off 4H-SiC (0001) controlled by step bunching and debunching mechanism using Dynamic AGE-ing® (abstract)

Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards (abstract)

Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions (abstract)

Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence (abstract)

Defects characterization and mitigation through the trench gate patterning process (abstract)

The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates (abstract)

High Spatial Resolution Analysis of Dislocations in 4H-SiC Using Low Accelerating Voltage Scanning Electron Microscope (SEM)-Cathodoluminescence (CL) (abstract)

Hydrogen and point defect introduction into 4H-SiC by plasma treatment (abstract)

Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes (abstract)

Densification & Single Side Polishing application for improvement of high-level wafer warpage in SiC substrate. (abstract)

Effects of sulfurization on the properties of 4H-SiC Schottky contacts (abstract)

Analysis of Ohmic contacts simultaneously formed on both n-type and p-type 4H-SiC (abstract)

An Ohmic Contact for SiC-based P-channel HFET (abstract)

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes (abstract)

Qualitative study on laser backside ohmic contact formation of a SiC-Ni interface (abstract)

A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching Performances (abstract)

Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs (abstract)

A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics (abstract)

SiC Schottky-barrier diode without ion-implanted P-type regions (abstract)

Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs (abstract)

Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures (abstract)

Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor (abstract)

Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering (abstract)

Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks (abstract)

Effect of temperature and substrate morphology on the deposition and growth of silicon carbide on a 4H-SiC substrate (abstract)

Impact of Post Deposition Annealing on SiO2/SiC Structures Formed by Plasma Nitridation of the SiC Surface (abstract)

Late News: Liquid Metal Interconnects for SiC MOSFETs (abstract)

Improvement of the yield during crystal growth of SiC by PVT by proper selection and design of hot zone isolation components (abstract)

Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth (abstract)

Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization (abstract)

Study on effect of interfacial pore between seed and graphite holder for physical vapor transport growth of 4H-SiC crystal (abstract)

TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal growth (abstract)

Mobility enhancement in SiC n- and p-channel MOSFETs (abstract)

Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces (abstract)

Characterization of interface trap and mobility degradation in SiC MOS devices using gated Hall measurements (abstract)

Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors (abstract)

Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs (abstract)

SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability (abstract)

Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates (abstract)

High-temperature adhesive bonding of 4H-SiC substrates (abstract)

Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor (abstract)

Doping-dependent fixed charges in SiC MOSFETs (abstract)

Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC (abstract)

Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing (abstract)

4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process (abstract)

Atomistic defect modeling in SiC for crystal growth optimization (abstract)

Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates (abstract)

Study on conversion of survived BPDs in epitaxial layer to TEDs (abstract)

Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of 4H-SiC wafers (abstract)

Role of Point Defects in Suppressing Stacking Fault Expansion through Helium and Proton Implantation in SiC Epitaxial Layer (abstract)

Polarization superimposed phase contrast microscope inspection of dislocations in SiC epitaxial layer (abstract)

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation (abstract)

Device Performance and Reliability of SiC CMOS up to 400 ̊C (abstract)

Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs (abstract)

Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET (abstract)

SiC in space: potential application survey (abstract)

Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation (abstract)

Monolithic fabrication of 4H-SiC micromechanical devices by electrochemical etching and characterization of vibrational modes (abstract)

SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity (abstract)

Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology (abstract)

Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform (abstract)

Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers (abstract)

Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis (abstract)

Latching current limiter for high-power distribution in space enabled by SiC N-MOSFET (abstract)

Filling-design effect of powder source in the crucible on SiC single-crystal growth (abstract)

A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process (abstract)

Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC (abstract)

Development and scale-up of 200mm 4H SiC crystals (abstract)

Graphite an Enabler for Single Crystal SiC Growth (abstract)

The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal defects (abstract)

Optimization of SiC growth processes by using insights of inductive SiC inspection (abstract)

Factors to determine resistance characteristics of semi-insulating SiC single crystal (abstract)

Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor (abstract)

Integrated Approach to SiC Crystal Growth: Multiphysics Modeling and Chemistry Assessment in PVT Furnaces (abstract)

Mechanical Behavior of CVD-grown Tantalum Carbide (TaC) Coatings on Graphite Substrates (abstract)

Nanoscale infrared spectroscopic characterization of threading dislocations in SiC (abstract)

Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate (abstract)

Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data (abstract)

Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers. (abstract)

Numerical analysis of correlation between UV irradiation and current injection on bipolar degradation in PiN diodes (abstract)

Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer (abstract)

Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB (abstract)

DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing (abstract)

Nanoscale infrared polytype layer analysis and charge carrier profiling (abstract)

Characterization of Void Defects in PVT-Grown 4H-SiC Crystals (abstract)

Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates (abstract)

Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices (abstract)

A New Era of 8" Silicon-Carbide Wafering (abstract)

Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates (abstract)

Effect of intervening layer insertion on Φb reduction in TiN Schottky (abstract)

Monitoring of dose, temperature, and energy-dependent damage in Al implanted 4H-SiC by UV photo-modulated reflectance measurement (abstract)

Vth behavior by different barrier metals at positive bias HTGB & negative bias HTGBx (abstract)

Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse (abstract)

Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction (abstract)

Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001) (abstract)

Superjunction implementations within a 4H-SiC double trench MOSFET structure (abstract)

Effect of Chip Size on Reverse Recovery of SiC MOSFETs with Edge Termination (abstract)

Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs (abstract)

Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs) (abstract)

Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface (abstract)

Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions (abstract)

Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths (abstract)

Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics (abstract)

The investigation of effective thermal oxidation to SiC MOSFET gate oxide quality improvement (abstract)

Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type 4H-SiC (abstract)

Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient (abstract)

Epitaxial SiC Development for Young's Modulus Improvement (abstract)

The Doping Concentration Study of 4H-SiC Epitaxy with Nitrogen and Ammonia/Hydrogen Mixed Gas as Dopant (abstract)

NZFMR Magnetometry up to 500C Using SiC devices (abstract)

Evaluation of interface state density in ultrathin SiO2/SiC MOS structures utilizing self-assembled monolayers (abstract)

2.0 kV 4H-SiC TMBS Embedded UMOSFET (abstract)

Impact of Gate Switching Instability in SiC MOSFETs Application Performance Degradation During Hard Switching Conversion (abstract)

TDDB and HTGB Study of SiC MOSFET with Excessive Channel Leakage (abstract)

Unveiling border trap energetics in a SiO2-SiC system using capacitance based optical excitation spectroscopy (abstract)

Carbon-related interface defects in p-channel 4H-SiC MOSFETs (abstract)

Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs (abstract)

Photoelastic measurement of residual stress in 4H-SiC substrates for evaluation of crystal growth and wafering process (abstract)

Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs (abstract)

Deep Implanted SiC Super-Junction Technology (abstract)

Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device (abstract)

Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts (abstract)

Impact of transition from full- to semi-superjunction structure on the performance limit of 4H-SiC devices (abstract)

High Current Pulse Power Operation of 12 kV SiC Thyristors (abstract)

Threshold voltage drift mechanism in SiC MOSFETs by photon-assisted electron injection under bipolar AC gate stress (abstract)

Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress (abstract)

Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench orientations (abstract)

Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide (abstract)

An approach on the void-free refill of 4H-SiC trench by CVD (abstract)

Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry (abstract)

Lateral epitaxial CVD growth of 4H-SiC (abstract)

Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates (abstract)

Formation of Pt ohmic contacts on p-type SiC with low contact resistivity by 600°C-annealing process (abstract)

A simplified method for extracting contact resistivity using the circular transmission line model (abstract)

Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature (abstract)

Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices (abstract)

Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance (abstract)

Formation of Ti-based ohmic contacts on n-type SiC with ρC= 6*10^{-8} Ωcm^2 (abstract)

X-ray Topography Characterization of SiC Crystals aided by Ray Tracing Simulations (abstract)

Using Convolutional Neural Network to Map Defects in SiC (abstract)

Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers (abstract)

Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer (abstract)

New insights into the occurrence of prismatic slip during PVT growth of SiC crystals (abstract)

Polarization control of SiO2/SiC interfacial single-photon sources by oxygen pressure during thermal oxidation (abstract)

Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide (abstract)

Impurity-vacancy complexes in 4H-SiC: stability and properties (abstract)

Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure (abstract)

Near Field Spectroscopy of Silicon Carbide Nanosheets for Novel Application (abstract)

Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates (abstract)

Extrinsic Gate Reliability of SiC MOSFETs (abstract)

Optimization of Gate Oxide Screening Technology for Commercial SiC discrete MOSFETs and Power Modules (abstract)

On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide (abstract)

Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃ (abstract)

Unclamped Inductive Switching in SiC MOSFETs and Diodes: Implications for Standards, Testing, and Screening (abstract)

Life prediction of SiC-MOSFET by accelerated test using anode hole injection correction (abstract)

Prospects and Challenges for SiC Power Devices in MMC-VSC Applications (abstract)

Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs (abstract)

High-quality SiC crystal growth by the control of cooldown rate at cooling stage (abstract)

High Removal Rate Silicon Carbide (SiC) Slurry (abstract)

Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material (abstract)

Performance Enhancement of Cu2O/SiC Heterostructured Diodes (abstract)

Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers (abstract)

Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures (abstract)

Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies (abstract)

Kinematical parameters determining the nitrogen doping uniformity during physical vapor transport growth of 4H-SiC crystals (abstract)

Progress in etching methods of SiC wafer (abstract)

Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy (abstract)

How to simulate bipolar degradation by UV irradiation with high accuracy (abstract)

Molecular Dynamics Simulation Approach to H2 Etching Process on SiC (abstract)

Automatic etch pit detection and characterization in KOH etch images of 4H-SiC using deep learning (abstract)

All-Optical Volumetric Imaging of Killer Defects in a SiC Epilayer (abstract)

Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide (abstract)

Dependence of epi defects on surface preparation by plasma techniques. (abstract)

Study of SiC trench etching characteristics for different crystal planes (abstract)

Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET (abstract)

Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs (abstract)

Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime (abstract)

Formation of structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing (abstract)

Analysis of mechanical properties of 4H-SiC 6 inch wafers by nanoindentation test (abstract)

Grind performance improvement study for SiC (abstract)

Analysis of SiO2 Mask Shape Effect on SiC Trench Deformation in Biased SF6/O2 Inductively Coupled Plasma (abstract)

Rapid thermal anneal with conductive heating for SiC wafers processing (abstract)

A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application (abstract)

Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET (abstract)

Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations (abstract)

DFT analysis on the electronic structure of 4H-SiC/SiO2 after NO annealing (abstract)

Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension (abstract)

Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench (abstract)

Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope (abstract)

Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET (abstract)

Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs (abstract)

Fast high current sensing SMD resistor network layout for low inductance insertion (abstract)

Research Progress on the SiC Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues (abstract)

Innovative SiC coating for protection graphite reactor components in SiC semiconductor processing (abstract)

High mobility SiC MOSFETs using an oxidation-minimizing process (abstract)

1200 V 4H-SiC VDMOSFET Having >2.5x On-Current Improvement (abstract)

Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial layers (abstract)

Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application (abstract)

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer (abstract)

Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy (abstract)

Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation (abstract)

Suppression of Short-Channel Effects by Self-Aligned Process for SiC UMOSFETs with Channel Length of under 0.3 μm (abstract)

Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs (abstract)

A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs (abstract)

SiC MOSFETs C-V capacitance curves with negative biased Drain (abstract)

On the Characterization of 4H-SiC PiN and JFETs for their USE in High-Voltage Bidirectional Power Devices (abstract)

Heavy-ion irradiation effects in 4H-SiC unipolar devices (abstract)

Impact of electron irradiation on SiC power MOSFET performance (abstract)

Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC MOSFETs (abstract)

Annealing 4H-SiC Trenches for Superjunction Technology (abstract)

Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing (abstract)

Investigation of the Stark Effect of TS and E color centers on a-face 4H-SiC (abstract)

Evolution of photoluminescence and optically detected magnetic resonance spectra of divacancy defects in 4H-SiC from cryogenic to room temperatures (abstract)

Investigation of oxygen-related defects in 4H-SiC from ab initio calculations (abstract)

Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance (abstract)

Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs (abstract)

Three level stress pulses to investigate gate switching instability (abstract)

Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET (abstract)

Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes (abstract)

Using in-situ nanoprobing in the scanning electron microscope to visualize the local potential on a biased SiC p-n junction (abstract)

8-inch thick SiC crystals grown by solution growth method combined with digital twin (abstract)

Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal Growth (abstract)

Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process Informatics (abstract)

A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors (abstract)

ML-based Surrogate Model for Temperature Prediction and Efficient Parameter Calibration of PVT Simulations (abstract)

Investigation on the CTE matching of graphite substrates and TaC coating (abstract)

Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates (abstract)

3C-SiC on Si substrates by Si and C multilayers transformation (abstract)

Development of a novel warpage control method for epi-ready 4H-SiC wafers by depositing homoepitaxial layers on both Si- and C-faces (abstract)

Submicron Diamond Slurry for Polishing Silicon Carbide Wafers (abstract)

Partial dislocation-induced surface irregularities observed on 4H-SiC homoepitaxial layers (abstract)

Highly spatially resolved photoluminescence characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals (abstract)

Nitrogen Dopant Incorporation into epitaxial 4H-SiC: Influence of Chemical Vapor Deposition Growth Parameters and Materials (abstract)

A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects (abstract)

Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC Epitaxy (abstract)

Influence of Deposition Techniques on the Electrical properties and Deep level Defect of Ga2O3/SiC heterojunction diode (abstract)

Homoepitaxy of 4H-SiC on a-plane substrates (abstract)

Clustering tendencies of C atoms in SiO2 matrix with different O-containing conditions: molecular dynamics study with a universal neural network potential (abstract)

Determining Compensation of Implanted Aluminum Dopants in 4H-SiC by Simultaneous Fitting of Charge Carrier Concentration and Mobility (abstract)

Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET (abstract)

High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates (abstract)

Doping dependent electronic and kinetic properties of dislocations in 4H silicon carbide (abstract)

Novel Catalyst-Referred Etching Technology for Preparing Epi-Ready Silicon Carbide Substrates (abstract)

Threading Dislocation Behavior in the Facet Region of PVT-Grown 4H-SiC Crystals (abstract)

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation (abstract)

A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy (abstract)

Carbon vacancy in commercial junction barrier Schottky diodes (abstract)

DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation (abstract)

Proton implantation into substrate and stacking faults in epitaxial layers (abstract)

TCAD Model for Thermal Oxidation of 4H-SiC (abstract)

Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking capability (abstract)

Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser (abstract)

BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC (abstract)

ITO/4H-SiC Schottky contacts for UV applications (abstract)

Argon plasma treatment of 4H-SiC surface before nickel ohmic contacts formation by UV laser annealing (abstract)

Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on SiC (abstract)

Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification (abstract)

Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET (abstract)

Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration (abstract)

Characterization of SiC trenches using innovative 3D CDSEM (abstract)

Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method (abstract)

SiC for sensing in harsh environments: status, new efforts. (abstract)

The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery (abstract)

Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs) (abstract)

A Novel all-SiC Neural Interface: In-vivo Performance (abstract)

Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs (abstract)

TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET (abstract)

Stress fields distribution and simulation in 3C-SiC (111) resonators (abstract)

Design Optimization of a 6.5 kV Split-Gate p-Channel 4H-SiC IGBT (abstract)

Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET (abstract)

Development and Demonstration of a High Temperature and High Performance Dual Side Cooling SiC Power Module for Automotive Application (abstract)

Formation of highly doped and defect-free p-type junctions in SiC by using high temperature implants and UV-Laser Annealing (abstract)

Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC (abstract)

SiC half-bridge modules to improve efficiency and reduce area of high-power motor drives in space (abstract)

Controlled domain in 3C-SiC epitaxial growth on off-oriented 4H-SiC substrate for water splitting (abstract)

Influence of substrate quality for SiC Bipolar Degradation at high current levels (abstract)

Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation (abstract)

Trench Etch Processing for SiC Superjunction Schottky Diodes (abstract)

Spectral Investigation of Various Stacking Faults After Epitaxial Growth of 180m Thick Layer on 4H-SiC substrates (abstract)

Epitaxial growth of 280 μm thick 4H-SiC on 4°-off substrates for ultra-high-power devices (abstract)

Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy (abstract)

Investigation of Dry Transfer of Epitaxial Graphene from SiC(0001) (abstract)

Unleashing the Potential of Low Dimensional Silicon Carbide (abstract)

New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT (abstract)

Fabrication of the planer SiC gate-all-around JFET with channel dose modulation (abstract)

Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation (abstract)

Simulation of High-energy Channeling Implantation in 4H-SiC (abstract)

Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC (abstract)

Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation (abstract)

Effect of counter-doping on threshold voltage and mobility in SiC p-channel MOSFETs (abstract)

Lifetime modeling of MOS based SiC vertical power devices under high voltage blocking stress (abstract)

Challenges of Transient Virtual Junction Temperature Measurement of SiC MOSFETs by VSD(T)-Method for Power Cycling – A Study on Impact Factors (abstract)

Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices (abstract)

Investigation of overcurrent turn-off robustness of 1200 V SiC MOSFETs (abstract)

Analysis of Silicon Vacancy Configurations and their Identification (abstract)

Characterization of the charge state of the silicon vacancy in 4H-SiC using low-energy muon spin spectroscopy (abstract)

Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study (abstract)

Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance Measurements of Deep Level Defects in GaN Schottky Diodes (abstract)

Monte Carlo analyses on impact ionization coefficients in 4H-SiC (abstract)

Low-field and high-field anisotropic electron transport in 4H-SiC (abstract)

Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers (abstract)

First principles study of acceptor impurities in 4H-SiC bulk and interfaces (abstract)

Physically Based Mobility Model for SiC MOSFETs in TCAD (abstract)

TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs (abstract)

Influence of Threshold Voltage Mismatch on Switching Behavior of Parallel SiC Power MOSFETs (abstract)

A Physics-Based SPICE Model for a SiC Vertical Power MOSFET (abstract)

SiC Trench MOSFET Design and Concept Considerations

ICSCRM 2024 Closing

ICSCRM 2025 Announcement