Program for Tuesday, October 1st: Talk View

PROGRAM FOR TUESDAY, OCTOBER 1ST: TALK VIEW

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View: with abstracts session overview

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:40-09:10

Improvement of the yield during crystal growth of SiC by PVT by proper selection and design of hot zone isolation

Peter Wellmann, Sven Strüber, Johannes Steiner

09:10-09:30

Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid

Jeong, Park, Sun, Jeong, Shin, Bae, Lee

09:30-09:50

Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and

Hammer et.al

09:50-10:10

Study on effect of interfacial pore between seed and graphite holder for physical vapor transport growth of 4H-SiC

Daisuke Tahara, Shigeyuki Kuboya, Kazuma Eto, Takeshi Mitani, Tomohisa Kato

10:10-10:30

TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal

K. Schuck-Buehner, M. Trempa, M. Lang, J. Friedrich, D. Mützenich, T. Kornmeyer

08:40-09:10

Mobility enhancement in SiC n- and p-channel MOSFETs

Mitsuaki Kaneko, Keita Tachiki, Kyota Mikami, Haruki Fujii, Tsunenobu Kimoto

09:10-09:30

Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces

H. Hirai, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada

09:30-09:50

Characterization of interface trap and mobility degradation in SiC MOS devices using gated Hall

Suman Das, Daniel J. Lichtenwalner, Shane R. Stein, Sei-Hyung Ryu

09:50-10:10

Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors

Nagel, Kovacevic-Badstuebner, Kumar, Bolat, Pocaterra, Race, Alfieri, Grossner

10:10-10:30

Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs

Shane Stein, Suman Das, Ayan Biswas, Daniel Lichtenwalner, Sei-Hyung Ryu

10:30-11:00 Break

11:00-11:30

SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and

E. Guiot, G. Picun, F. Allibert, A. Drouin, W. Schwarzenbach

11:30-11:50

Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered

Bellocchi, Rascuna, Mancuso, Picun, Guiot, Schwarzenbach, Arena, Saggio

11:50-12:10

High-temperature adhesive bonding of 4H-SiC substrates

Parmar, Leitgeb, Yadav, Zellner, Wedl, Pfusterschmied, Schmid

12:10-12:30

Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch

Philip Hens, Kevin Albrecht, Birgit Kallinger, Robin Karhu, Jürgen Erlekampf

11:00-11:30

Doping-dependent fixed charges in SiC MOSFETs

Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto

11:30-11:50

Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC

J. Ziegler, D. Scholten, H. Bartolf, A. Voznyi, P. Rabinzohn, J. Schulze

11:50-12:10

Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition

Yildirim et.al

12:10-12:30

4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process

Tomita et.al

12:30-14:00 Break

14:00-14:20

Atomistic defect modeling in SiC for crystal growth optimization

Lorenz Romaner, Zahra Rajabzadeh, Celine Halkali, Georg Holub, René Hammer

14:20-14:40

Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates

Uchida, Kobayashi, Hatta, Ishikawa, Higashi, Sezaki, Harada, Kojima

14:40-15:00

Study on conversion of survived BPDs in epitaxial layer to TEDs

Kazumi Takano, Yasuyuki Igarashi

15:00-15:20

Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of 4H-SiC

Hideki Sako, Shohei Hayashi, Kentaro Ohira, Kenji Kobayashi, Toshiyuki Isshiki

15:20-15:40

Role of Point Defects in Suppressing Stacking Fault Expansion through Helium and Proton Implantation in SiC Epitaxial

Shunta Harada, Hitoshi Sakane, Masashi Kato

15:40-16:00

Polarization superimposed phase contrast microscope inspection of dislocations in SiC epitaxial

Ryo Hattori, Yongzhao Yao, Yukari Ishikawa

14:00-14:20

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C

Philip Neudeck, Christina Adams, Michael Krasowski, David Spry, Norman Prokop

14:20-14:40

Device Performance and Reliability of SiC CMOS up to 400 ̊C

Ashik, Isukapati, Zhang, Liu, Gupta, Morgan, Misra, Sung, Fayed, Agarwal, Lee

14:40-15:00

Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs

Sengupta et.al

15:00-15:20

Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET

Kagoshima et.al

15:20-15:40

SiC in space: potential application survey

Antxon Arrizabalaga

15:40-16:00

Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion

Takahashi et.al

16:00-16:30 Break

16:30-18:30

Monolithic fabrication of 4H-SiC micromechanical devices by electrochemical etching and characterization of vibrational

André Hochreiter, Michael Krieger, Heiko B. Weber

SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity

Habersat et.al

Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide

Stuermer et.al

Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform

Shanying Cui, Brett Yurash, Biqin Huang, Tong Wang, Thaddeus Ladd

Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color

Enora Vuillermet, Serguei Kochtcheev, Elise Usureau, Nicolas Bercu, Mihai Lazar

Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis

Daniel Hart, David Spry, Gary Hunter

Latching current limiter for high-power distribution in space enabled by SiC N-MOSFET

Antxon Arrizabalaga

Filling-design effect of powder source in the crucible on SiC single-crystal growth

Kang, Lee, Choi, Song, Kim, Park, Jung, Lee

A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process

Tawhid Rana, Kevin Moeggenborg, Katarzyna Stokeley, Sam Johnson, Edward Sanchez

Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC

Bowen Dong, Ismail Nas, Wei Fan, Jeff Lennartz, Jon Leist

Development and scale-up of 200mm 4H SiC crystals

Taehee Kim, Ian Manning, Meongkeun Ju

Graphite an Enabler for Single Crystal SiC Growth

Sara Andreoli, Ievgen Izvarin, Fernando Vallejos Burgos, Joseph Abrahamson

The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal

Kohei Toda, Daichi Dojima, Yuta Nakajima, Hiroshi Mihara, Tadaaki Kaneko

Optimization of SiC growth processes by using insights of inductive SiC inspection

Michael Hofmann, Marcus Klein, Senthil Vinodth

Factors to determine resistance characteristics of semi-insulating SiC single crystal

Woo Yeon Kim, Gyu Do Lee

Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor

J. Erlekampf, M. Pfeffer, K. Albrecht, R. Ullmann, J. Köhler, P. Hens

Integrated Approach to SiC Crystal Growth: Multiphysics Modeling and Chemistry Assessment in PVT

Zaher Ramadan, Thomas Obermüller, René Hammer, Lorenz Romaner

Mechanical Behavior of CVD-grown Tantalum Carbide (TaC) Coatings on Graphite Substrates

Yvonne Dieudonné, Kevin Anker, Kelly Holmwood Benito

Nanoscale infrared spectroscopic characterization of threading dislocations in SiC

Scott Criswell, Nadeemullah Mahadik, Joshua Caldwell

Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate

Lee, Li, Yeo, Voo, Kumar, Tok, Chand, Bera, Maddi, Chung, Hebert, Singh, Yeo

Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device

Faisal et.al

Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC

Thörnberg, Polisski, Giuffrida, De Luca, Catena, Wilson, Magnusson

Numerical analysis of correlation between UV irradiation and current injection on bipolar degradation in PiN

Yasuyuki Igarashi, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer

M. Na, S.-K. Hong, W. Bahng, H. Jung, C. Oh, D. Jang, H.W. Kim

Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB

Cannizzaro et.al

DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume

E. Cela, W. Schwarzenbach, R. Shrestha, G. Bast, S. Shahidi, G. Simpson

Nanoscale infrared polytype layer analysis and charge carrier profiling

Dario Siebenkotten, Shuhei Amakawa, Manuel Marschall, Arne Hoehl, Bernd Kästner

Characterization of Void Defects in PVT-Grown 4H-SiC Crystals

Liu, Safko, Hamann, Dupre, Bouch, MacIntosh, Goldberg, Philpott, Schunemann

Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates

Horn, Wicker, Wellisz, Zeledon, Nittala, Heremans, Awschalom, Guha

Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC

Megalini et.al

A New Era of 8" Silicon-Carbide Wafering

Malte Mueller, Finbarr Coughlan, Kevin Rachor

Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates

M.J. Kang, Y.J. Park, S. Kim, D.I. Son, D.-H. Kang, H.-K. Shin

Effect of intervening layer insertion on Φb reduction in TiN Schottky

S. Takagi, H. Yoshihashi, K. Tanaka, T. Imamura, H. Kono

Monitoring of dose, temperature, and energy-dependent damage in Al implanted 4H-SiC by UV photo-modulated reflectance

Jeong Hyun Moon, Ha Bin Jeong, Laszlo Balogh

Vth behavior by different barrier metals at positive bias HTGB & negative bias HTGBx

Sanghong Park, Daeeun An

Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse

Guimerá Coll, Black, Abraham, Kamishetty, Merkle, Bathurst, Bertoni

Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects

Kai-Wen Hsu, Huai-Lin Huang, Chia-Lung Hung, Yi-Kai Hsiao, Bing-Yue Tsui

Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001)

Shinji Kamihata, Hiroki Fujimoto, Takuma Kobayashi, Heiji Watanabe

Superjunction implementations within a 4H-SiC double trench MOSFET structure

V.M. Kotagama, A.B. Renz, K. Melnyk, V. Shah, M. Antoniou, P. Gammon

Effect of Chip Size on Reverse Recovery of SiC MOSFETs with Edge Termination

Yeonjun Kim, Hyemin Kang

Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs

Horiuchi, Fukunaga, Shimabukuro, Yano, Sometani, Hirai, Watanabe, Umeda

Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes

J.H. Seo, Y.J. Kim, Y. Moon, H. Jeong, J.H. Moon, H.W. Kim, W. Bahng, Y.J. Yoon

Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench

Kimura, Tominaga, Fukui, Iijima, Adachi, Yamamoto, Kagawa, Kono

Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base

J.H. Moon, J.H. Seo, J.H. Kim, H.W. Kim, Y.-h. Cho, S.-M. Koo

Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths

Cho, Moon, Park, Kim, Park, Seo, Kim, Kim, Koo, Lee, Chung

Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics

Park, Kim, Kim, Hwang, Lee, Choi, Yang, Han, Kang, Shin

The investigation of effective thermal oxidation to SiC MOSFET gate oxide quality improvement

Youngbin Im, Inkyu Kim, Jiyeong Yoon

Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type

Orazio Samperi, Lasse Vines, Zimo Yuan, Anders Hallén, Maria Elena Fragalà

Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient

V. Van Cuong, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

Epitaxial SiC Development for Young's Modulus Improvement

Brenda Vanmil, Charity Burgess, Haoran Wen, Farrokh Ayazi

The Doping Concentration Study of 4H-SiC Epitaxy with Nitrogen and Ammonia/Hydrogen Mixed Gas as

Yuebin Han, Da Li, Jianxin Shi

NZFMR Magnetometry up to 500C Using SiC devices

F. Sgrignuoli, I. Viti, Z.-G. Yu, S. Goswami, R. Ghandi, M. Aghayan, D. Shaddock

Evaluation of interface state density in ultrathin SiO2/SiC MOS structures utilizing self-assembled

Ryo Okuhira, Takamasa Kawanago, Takuji Hosoi

2.0 kV 4H-SiC TMBS Embedded UMOSFET

J.-W. Hu, Y.-J. Wu, K. Kang, C.-F. Huang, W. Weng, Y.-R. Tu, Y.-S. Lin, Y.-Z. Hu

Impact of Gate Switching Instability in SiC MOSFETs Application Performance Degradation During Hard Switching

Andrea Piccioni, Maximilian Feil, Thomas Aichinger

TDDB and HTGB Study of SiC MOSFET with Excessive Channel Leakage

Shuoben Hou, Christoffer Lundgren, Wlodek Kaplan, Sergey Reshanov