Program for Wednesday, October 2nd: Talk View

PROGRAM FOR WEDNESDAY, OCTOBER 2ND: TALK VIEW

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9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:40-09:10

Unveiling border trap energetics in a SiO2-SiC system using capacitance based optical excitation

Piyush Kumar, Agatha Ulibarri, Michel Nagel, Christian Dorfer, Ulrike Grossner

09:10-09:30

Shimabukuro et.al

09:30-09:50

Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs

Vandevenne, Lettens, Avramenko, Vrielinck, Goovaerts, Moens, Cambré

09:50-10:10

Photoelastic measurement of residual stress in 4H-SiC substrates for evaluation of crystal growth and wafering

Paul Wimmer, Henning Katte, Christian Reimann, Christian Kranert

10:10-10:30

Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC

Cambré et.al

08:40-09:10

Deep Implanted SiC Super-Junction Technology

Reza Ghandi, Collin Hitchcock, Stacey Kennely

09:10-09:30

Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device

K. Melnyk, M. Boccarossa, A.B. Renz, Q. Cao, P.M. Gammon, V.A. Shah, M. Antoniou

09:30-09:50

Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional

Mohamed Torky, Woongje Sung

09:50-10:10

Impact of transition from full- to semi-superjunction structure on the performance limit of 4H-SiC

Daisuke Iizasa, Hiroaki Shiraga, Seigo Mori, Yuki Nakano

10:10-10:30

High Current Pulse Power Operation of 12 kV SiC Thyristors

Nakayama, Tanaka, Kato, Kojima, Sometani, Yonezawa, Shima, Watanabe, Konishi

10:30-11:00 Break

11:00-11:30

Threshold voltage drift mechanism in SiC MOSFETs by photon-assisted electron injection under bipolar AC gate

Hiroshi Yano, Yuya Enjoji, Ryosuke Shingo, Noriyuki Iwamuro

11:30-11:50

Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress

T. Kobayashi, K. Koyanagi, H. Hirai, M. Sometani, M. Okamoto, H. Watanabe

11:50-12:10

Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench

M. Avramenko, J.-F. Cano, L. De Schepper, J. Franchi, K. Gumaelius, P. Moens

12:10-12:30

Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited

Chand et.al

11:10-11:30

An approach on the void-free refill of 4H-SiC trench by CVD

Shiyang Ji, Kazutoshi Kojima, Shinsuke Harada, Yasunori Tanaka

11:30-11:50

Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated

Turner, Colston, Stokeley, Newton, Renz, Gammon, Antoniou, Mawby, Shah

11:50-12:10

Lateral epitaxial CVD growth of 4H-SiC

U. Hassan, M. Ghezellou, J.H. Seo, A. Eldakrouri, K. Moyers, T. Ravi

12:10-12:30

Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates

Xuan Sang et.al

12:30-14:00 Lunch

14:00-14:20

Formation of Pt ohmic contacts on p-type SiC with low contact resistivity by 600°C-annealing

Kotaro Kuwahara, Mitsuaki Kaneko, Tsunenobu Kimoto

14:20-14:40

A simplified method for extracting contact resistivity using the circular transmission line model

J.-H. Park, J. Kim, A. Kumar, J. Zacks, D. Flint, D. Lichtenwalner, S.-H. Ryu

14:40-15:00

Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing

Vivona et.al

15:00-15:20

Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices

Kobayashi, Uchida, Hatta, Ishikawa, Higashi, Sezaki, Harada, Kojima

15:20-15:40

Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact

Yeo, Voo, Bera, Chand, Singh, Xuan Sang, Kumar, Chung, Xie, Yeo, Gong

15:40-16:00

Formation of Ti-based ohmic contacts on n-type SiC with ρC= 6*10^{-8} Ωcm^2

K. Maeda, K. Kuwahara, M. Hara, M. Kaneko, T. Kimoto

14:10-14:40

X-ray Topography Characterization of SiC Crystals aided by Ray Tracing Simulations

Balaji Raghothamachar, Qianyu Cheng, Zeyu Chen, Shanshan Hu, Michael Dudley

14:40-15:00

Using Convolutional Neural Network to Map Defects in SiC

J. Gallagher, N. Mahadik, R. Stahlbush, K. Hobart, M. Mastro

15:00-15:20

Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers

Cheng, Kayang, Chen, Hu, Raghothamachar, Dudley, Gersappe, Soukhojak, Baek

15:20-15:40

Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer

S.-K. Hong, M. Na, C. Oh, J. Park, D. Jang, Y.H. Kim, H. Jung, W. Bahng

15:40-16:00

New insights into the occurrence of prismatic slip during PVT growth of SiC crystals

Hu et.al

16:00-16:30 Break

16:30-18:30

Polarization control of SiO2/SiC interfacial single-photon sources by oxygen pressure during thermal

Rinku Oyama, Yasuto Hijikata

Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide

J. Park, S. Paik, S.-J. Hwang, D. Liu, Ö.O. Soykal, J. Wrachtrup, S.-Y. Lee

Impurity-vacancy complexes in 4H-SiC: stability and properties

Takuma Kobayashi, Sosuke Iwamoto, Heiji Watanabe

Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial

Onishi, Nakanuma, Tahara, Kutsuki, Watanabe, Kobayashi, Toyama

Near Field Spectroscopy of Silicon Carbide Nanosheets for Novel Application

Nishan Shrestha, Sakineh Chabi, Andrew Jones

Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates

M. Alaluss, C. Böhm, P. Heimler, T. Basler, A. Elsayed, K. Oberdieck, S. Goel

Extrinsic Gate Reliability of SiC MOSFETs

R. Kupper, C. Martinella, S. Race, P. Kumar, N. Fuer, U. Grossner

Optimization of Gate Oxide Screening Technology for Commercial SiC discrete MOSFETs and Power

Limeng Shi

On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate

Holger Schlichting, Tom Becker, Leander Baier, Mathias Rommel, Tobias Erlbacher

Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃

V. Van Cuong, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

Unclamped Inductive Switching in SiC MOSFETs and Diodes: Implications for Standards, Testing, and

Davood Momeni, Zhenkun Wang, Yuanyuan Ji, Hongchao Liu

Life prediction of SiC-MOSFET by accelerated test using anode hole injection correction

Koichi Endo, Fumiki Kato, Junji Senzaki

Prospects and Challenges for SiC Power Devices in MMC-VSC Applications

Alatise, Jahdi, Gammon, Ortiz Gonzalez, Hosseinzadehlish, Floros, Ludtke

Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power

M. Bhattacharya, M. Jin, L. Shi, J. Qian, S. Houshmand, M.H. White, A.K. Agarwal

High-quality SiC crystal growth by the control of cooldown rate at cooling stage

Chae-Young et.al

High Removal Rate Silicon Carbide (SiC) Slurry

S. Alety, C. Li, A. Verma, H. Huang, N. Mahadev, R. Singh, P. Singh

Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material

Jeffrey Gum, Martin Nobs

Performance Enhancement of Cu2O/SiC Heterostructured Diodes

H.-W. Lee, M.-J. Jeong, T.-H. Lee, Y.-H. Cho, W.-H. Shin, J.-M. Oh, S.-M. Koo

Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC

Song, Kumar, Nguyen, Umesh, Bera, Tok, Chung, Singh, Yeo

Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures

Choi, Lee, Lee, Park, Kim, Park, Shin, Oh, Koo, Chung

Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies

Wilson et.al

Kinematical parameters determining the nitrogen doping uniformity during physical vapor transport growth of 4H-SiC

Yuta Inoue, Wataru Tochizaki, Noboru Ohtani

Progress in etching methods of SiC wafer

Jungmin Lee, Hyunjun Kim, Man Young Lee, Hyung Ik Lee, Gwan-Hyoung Lee

Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient

P. Kaminski, R. Kozlowski, J. Zelazko, T. Ciuk, E. Brzozowski, K. Kosciewicz

How to simulate bipolar degradation by UV irradiation with high accuracy

Yasuyuki Igarashi, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

Molecular Dynamics Simulation Approach to H2 Etching Process on SiC

Hidenori Saeki, Yuki Ohuchi, Hiroki Sakakima, Satoshi Izumi

Automatic etch pit detection and characterization in KOH etch images of 4H-SiC using deep learning

Georg Holub, Sebastian Hofer, Thomas Obermüller, Lorenz Romaner

All-Optical Volumetric Imaging of Killer Defects in a SiC Epilayer

Torben Lennart Purz, Eric Martin

Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide

Giovanni Alfieri, Sami Bolat, Elizabeth Buitrago, Piyush Kumar, Ulrike Grossner

Dependence of epi defects on surface preparation by plasma techniques.

Katarzyna Stokeley, Andrew Newton, Zareena Hassanbee, Vishal Shah

Study of SiC trench etching characteristics for different crystal planes

Ranjan, Bera, Kumar, Lin, Chand, Singh, Chung, Yeo, Roth, Sundaram, Liyuan, Kam

Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET

V. Van Cuong, T. Meguro, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power

Bolat et.al

Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide

Tom Becker, Mathias Rommel, Holger Schlichting, Eric Guiot, Frédéric Allibert

Formation of structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing

Carsten Hellinger, Michael Thum, Mathias Rommel

Analysis of mechanical properties of 4H-SiC 6 inch wafers by nanoindentation test

Brunella Cafra, Antonella Sciuto, Giuseppe D'Arrigo

Grind performance improvement study for SiC

Byungyoon An, Hyeonbin Ahn

Analysis of SiO2 Mask Shape Effect on SiC Trench Deformation in Biased SF6/O2 Inductively Coupled

Yury Shustrov, Anton Kobelev, Andrey Smirnov, Daria Zimina

Rapid thermal anneal with conductive heating for SiC wafers processing

Pages, Van Der Linde, Oterdoom, Steltenpool, Eveleens, Kutznetsov, Beijersbergen

A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application

Xiaofan Ma, Mattias Ekström, Carl-Mikael Zetterling

Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET

S. Rathi, L. Laborie, Y. Qi, A. Murphy, M. Bell, R. Young, D. Clark

Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD

Maresca, Terracciano, Borghese, Boccarossa, Riccio, Breglio, Wirths, Irace

DFT analysis on the electronic structure of 4H-SiC/SiO2 after NO annealing

Tomoya Ono, Mitsuharu Uemoto, Nahoto Funaki, Kosei Sugiyama

Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination

Kamil Kotra, Sigo Scharnholz, Ralf Hassdorf, Milan Zuvic, Klaus Hoffmann

Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench

Scognamillo et.al

Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman

T. Nagasaka, T. Uchida, M. Murakami, M. Yoshikawa, M. Lim, O. Rusch, M. Rommel

Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET

P. Vudumula, L.K. Bera, U. Chand, A.Y. Hannan, S. Chung, N. Singh, Y.C. Yeo

Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs

C. Shen, S. Jahdi, M. Hosseinzadehlish, P. Mellor, K. Floros, I. Ludtke

Fast high current sensing SMD resistor network layout for low inductance insertion

Antxon Arrizabalaga, Jesús Oliver

Research Progress on the SiC Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues

Peng Gu, Yu Wang

Innovative SiC coating for protection graphite reactor components in SiC semiconductor processing

C. Seimetz, M. Trempa, J. Friedrich, M. Dirk, T. Kornmeyer

High mobility SiC MOSFETs using an oxidation-minimizing process

Koushik Ramadoss, Ashalata Samal, Dallas Morisette, James Cooper

1200 V 4H-SiC VDMOSFET Having >2.5x On-Current Improvement

Widjaja et.al