Program for Thursday, October 3rd: Talk View

PROGRAM FOR THURSDAY, OCTOBER 3RD: TALK VIEW

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View: with abstracts session overview

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:40-09:10

Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial

F. Fujie, T. Shiono, K. Murata, N. Ishibashi, Y. Mabuchi, H. Tsuchida

09:10-09:30

Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power

Mahadik, Scheiman, Stahlbush, Drouin, Rouchier, Schwarzenbach, Zielinski

09:30-09:50

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial

Chen, Mahadik, Dudley, Raghothamachar, Scheiman, Stahlbush, Kim, Owen

09:50-10:10

Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence

Ishibashi, Shikama, Niwa, Tanaka, Amishiro, Imai, Sugawara, Kagawa, Furukawa

10:10-10:30

Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation

H. Jayaprakash, C. Csato, M. Kato, T. Li, F. Krippendorf, M. Rueb, J. Schulze

08:40-09:10

Suppression of Short-Channel Effects by Self-Aligned Process for SiC UMOSFETs with Channel Length of under 0.3

Shinichi Kimoto, Ryosuke Iijima, Shinsuke Harada

09:10-09:30

Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs

J. Park, S. Sundaresan, A. Agarwal, V. Mulpuri, S. Dail, Y. Dong, N. Walsh

09:30-09:50

A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs

Skylar Deboer, Seung Jang, Adam Morgan, Woongje Sung

09:50-10:10

SiC MOSFETs C-V capacitance curves with negative biased Drain

Ilaria Matacena, Luca Maresca, Andrea Irace, Giovanni Breglio, Santolo Daliento

10:10-10:30

On the Characterization of 4H-SiC PiN and JFETs for their USE in High-Voltage Bidirectional Power

Arne Benjamin Renz, Yifan Yiang, Peter Michael Gammon, Jiankang Bu

10:30-11:00 Break

11:00-11:30

Heavy-ion irradiation effects in 4H-SiC unipolar devices

Corinna Martinella, Arto Javanainen, Ulrike Grossner

11:30-11:50

Impact of electron irradiation on SiC power MOSFET performance

K. Matsuki, Y. Ichikawa, Y. Onozawa, N. Iwamuro, H. Yano

11:50-12:10

Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC

Kumiko Konishi, Naoki Watanabe, Hiroyuki Okino, Yuki Mori, Akio Shima

12:10-12:30

Annealing 4H-SiC Trenches for Superjunction Technology

Turner, Colston, Stokeley, Newton, Renz, Gammon, Antoniou, Mawby, Shah

11:10-11:30

Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing

T. Nakanuma, K. Tahara, T. Haruko, K. Kutsuki, H. Watanabe, T. Kobayashi

11:30-11:50

Investigation of the Stark Effect of TS and E color centers on a-face 4H-SiC

Fabio Candolfi, Johannes Lehmeyer, Heiko B. Weber, Michael Krieger

11:50-12:10

Evolution of photoluminescence and optically detected magnetic resonance spectra of divacancy defects in 4H-SiC from cryogenic to room

D. Shafizadeh, D.Q. Hoang, I.A. Abrikosov, N.T. Son, I.G. Ivanov

12:10-12:30

Investigation of oxygen-related defects in 4H-SiC from ab initio calculations

Sosuke Iwamoto, Heiji Watanabe, Takuma Kobayashi

12:30-14:00 Lunch

14:00-14:20

Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical

Abbas et.al

14:20-14:40

Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power

S. Mancini, S.Y. Jang, Z. Chen, B. Raghothamachar, M. Dudley, W. Sung

14:40-15:00

Three level stress pulses to investigate gate switching instability

Dick Scholten, Juergen Uschmann

15:00-15:20

Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET

Shikama, Ishibashi, Niwa, Tanaka, Amishiro, Imai, Sugawara, Kagawa, Furukawa

15:20-15:40

Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar

Planson, Sonneville, Bevilacqua, Brosselard, Lazar, Scharnholz, Vergne, Morel

15:40-16:00

Using in-situ nanoprobing in the scanning electron microscope to visualize the local potential on a biased SiC p-n

M. Moser, G. Pobegen, J. Smoliner, I. Jozwik, M. Nelhiebel

14:10-14:40

8-inch thick SiC crystals grown by solution growth method combined with digital twin

Ujihara et.al

14:40-15:00

Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal

H. Zhou, H. Miura, K. Kutsukake, Y. Dang, S. Harada, T. Ujihara

15:00-15:20

Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process

D. Uematsu, T. Okamoto, T. Kanda, H. Uehigashi, T. Kanemura, M. Taki

15:20-15:40

A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling

Yoshikawa, Fukui, Okada, Miyakaze, Urata, Matsukawa, Matsushima

15:40-16:00

ML-based Surrogate Model for Temperature Prediction and Efficient Parameter Calibration of PVT

Lorenz Taucher, Zaher Ramadan, Rene Hammer, Thomas Obermüller, Lorenz Romaner

16:00-16:30 Break

16:30-18:30

Investigation on the CTE matching of graphite substrates and TaC coating

B. Dong, J. Leist, W. Fan, J. Lennartz, C. Tomek, T. Tuhser, M. Basavarajappa

Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates

H. Jayaprakash, C. Csato, F. Krippendorf, M. Rueb, J. Schulze, R. Koch

3C-SiC on Si substrates by Si and C multilayers transformation

D. Sudhahar, J. Döll, J. Reiprich, T. Scheler, D. Shekhawat, J. Pezoldt

Development of a novel warpage control method for epi-ready 4H-SiC wafers by depositing homoepitaxial layers on both Si- and

Daichi Dojima, Seyoon Jeong, Kohei Toda, Tadaaki Kaneko

Submicron Diamond Slurry for Polishing Silicon Carbide Wafers

Timothy Dumm, Jacob Palmer, Thomas Draskovic, Chung Kim

Partial dislocation-induced surface irregularities observed on 4H-SiC homoepitaxial layers

Koki Kitahara, Junji Senzaki, Noboru Ohtani

Highly spatially resolved photoluminescence characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC

Yuzo Takeda, Toshitatsu Iwai, Kazuyoshi Tanabe, Noboru Ohtani

Nitrogen Dopant Incorporation into epitaxial 4H-SiC: Influence of Chemical Vapor Deposition Growth Parameters and

Alexander Schrader, Nils Steller, Dennis Reimann, Firas Faisal

A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other

Urata, Miyakaze, Fukui, Okada, Matsukawa, Matsushima, Yoshikawa

Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC

Andrey Smirnov, Maxim Bogdanov, Daria Karpova, Alex Galyukov, Daria Zimina

Influence of Deposition Techniques on the Electrical properties and Deep level Defect of Ga2O3/SiC heterojunction

Seung-Hwan Chung, Se-Rim Park, Ji-Hyun Kim, Sang-Mo Koo

Homoepitaxy of 4H-SiC on a-plane substrates

Robin Karhu, Michael Pfeffer, Jannik Schwarberg, Paul Wimmer, Birgit Kallinger

Clustering tendencies of C atoms in SiO2 matrix with different O-containing conditions: molecular dynamics study with a universal neural network

Hiroki Sakakima, Keigo Ogawa, Sakurako Miyazaki, Satoshi Izumi

Determining Compensation of Implanted Aluminum Dopants in 4H-SiC by Simultaneous Fitting of Charge Carrier Concentration and

Julian Kauth, Norman Böttcher, Mathias Rommel

Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET

Niwa, Tanaka, Ishibashi, Amishiro, Imai, Kagawa, Sugawara, Watahiki

High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates

M. Le Cunff, F. Rieutord, D. Landru, O. Kononchuk, N. Cherkashin

Doping dependent electronic and kinetic properties of dislocations in 4H silicon carbide

Rong Wang

Novel Catalyst-Referred Etching Technology for Preparing Epi-Ready Silicon Carbide Substrates

Ara Philipossian, Yasa Sampurno, Tatsutoshi Suzuki, Kazuto Yamauchi

Threading Dislocation Behavior in the Facet Region of PVT-Grown 4H-SiC Crystals

Yafei Liu, Ryan Philpott, Pete Schunemann

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion

Chen et.al

A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance

M. Elko, P. Lenahan, R. Chu, Y. Du, J. Song, M. Flatte, D. Fehr, J. Sink

Carbon vacancy in commercial junction barrier Schottky diodes

Francis Ling, Tianxiang Lin, Ho-Lam Lee, Tony Chau

DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore

T. Yang, M. Perazzi, M. Leitgeb, C. Zellner, G. Pfusterschmied, U. Schmid

Proton implantation into substrate and stacking faults in epitaxial layers

Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane

TCAD Model for Thermal Oxidation of 4H-SiC

Christoph Zechner, Patrick Schmid, Tamara Fidler, Anna Johnsson

Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking

Sangyeob Kim, Hyowon Yoon, Sumin Park, Hanseok Seo, Ogyun Seok

Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser

Masui, Kadoya, Michihata, Takahashi, Ohtani, Abe, Hirano, Arimura

BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC

Yeo et.al

ITO/4H-SiC Schottky contacts for UV applications

R. Pascu, C. Romanitan, I. Mihalache, G. Pristavu, G. Brezeanu

Argon plasma treatment of 4H-SiC surface before nickel ohmic contacts formation by UV laser

Clément Berger, Daniel Alquier, Jean-François Michaud

Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on

S. Krause, U. Schroeder, A. Mikhaylov, T. Mikolajick, A. Wachowiak

Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device

Fiorenza et.al

Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET

Zhaowen He, T. Paul Chow

Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration

G. Kang, J. Kim, Y. Park, H. Yoon, S. Kim, S. Park, D. Baek, O. Seok

Characterization of SiC trenches using innovative 3D CDSEM

Shimon Levi, David Solomon, Shunit Petachia Halely

Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters

F.-J. Hsu, C.-J. Yu, T.-F. Chang, K.-T. Chu, H.-T. Hung, C.-T. Yen, C.-F. Huang

SiC for sensing in harsh environments: status, new efforts.

Portail, Kern, Berger, Ghouila-Houri, Guigoz, Alquier, Dufour, Talbi, Michaud

The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery

Y. Liu, S. Jahdi, M. Hosseinzadehlish, I. Laird, P. Mellor, K. Floros, I. Ludtke

Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)

Sekely, Satapathy, Yang, Allion, Barletta, Haber, Holland, Pavlidis, Muth

A Novel all-SiC Neural Interface: In-vivo Performance

M. Melton, C. Frewin, K. Deshpande, A. Ramakrishnan, S. Saddow

Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs

I. Kovacevic-Badstuebner, A.K. Brandl, S. Race, M. Nagel, U. Grossner

TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET

J. Lee, J.M. Kim, S.H. Kim, H.B. Lee, Y.C. Kim, H. Nah

Stress fields distribution and simulation in 3C-SiC (111) resonators

Francesco La Via, Viviana Scuderi, Annamaria Muoio, Sergio Sapienza

Design Optimization of a 6.5 kV Split-Gate p-Channel 4H-SiC IGBT

Kuan-Min Kang, Jia-Wei Hu, Chih-Fang Huang

Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET

Shunto Higashi, Vuong Cuong, Shin-Ichiro Kuroki

Development and Demonstration of a High Temperature and High Performance Dual Side Cooling SiC Power Module for Automotive

Gongyue Tang, Leong Ching Wai, Yong Han

Formation of highly doped and defect-free p-type junctions in SiC by using high temperature implants and UV-Laser

Louis Thuries

Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC

Chehadi et.al

SiC half-bridge modules to improve efficiency and reduce area of high-power motor drives in space

Antxon Arrizabalaga

Controlled domain in 3C-SiC epitaxial growth on off-oriented 4H-SiC substrate for water splitting

Kongshik Rho, Jun Fujita, Masashi Kato