ICSCRM 2024: INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2024

A
Abbas, Ahmad	Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Abe, Kozo	Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Abe, Maho	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Abraham, Jessica	Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse
Abrahamson, Joseph	Graphite an Enabler for Single Crystal SiC Growth
Abrikosov, Igor A.	Evolution of photoluminescence and optically detected magnetic resonance spectra of divacancy defects in 4H-SiC from cryogenic to room temperatures
Adachi, Kohei	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface
Adamo, Salvatore	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification
Adams, Christina	Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
Agarwal, Aditi	Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
Agarwal, Anant K.	Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs Device Performance and Reliability of SiC CMOS up to 400 ̊C
Aghayan, Mehrnegar	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Ahn, Hyeonbin	Grind performance improvement study for SiC
Ai, Xiangle	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Alaluss, Mohamed	Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates
Alatise, Olayiwola	Prospects and Challenges for SiC Power Devices in MMC-VSC Applications
Albrecht, Kevin	Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor
Alessandrino, Mario S.	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification
Alety, Sridevi	High Removal Rate Silicon Carbide (SiC) Slurry
Alfieri, Giovanni	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors First principles study of acceptor impurities in 4H-SiC bulk and interfaces Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Allibert, Frédéric	Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Allion, Greg	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Almeida, Carlos	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Alquier, Daniel	Argon plasma treatment of 4H-SiC surface before nickel ohmic contacts formation by UV laser annealing
Alquier, Daniel	SiC for sensing in harsh environments: status, new efforts.
Amakawa, Shuhei	Nanoscale infrared polytype layer analysis and charge carrier profiling
Amamiya, Takanori	Fabrication of the planer SiC gate-all-around JFET with channel dose modulation
Amishiro, Hiroyuki	Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
An, Byungyoon	Grind performance improvement study for SiC
An, Daeeun	Vth behavior by different barrier metals at positive bias HTGB & negative bias HTGBx
Anders, Jens	Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Andreoli, Sara	Graphite an Enabler for Single Crystal SiC Growth
Anker, Kevin	Mechanical Behavior of CVD-grown Tantalum Carbide (TaC) Coatings on Graphite Substrates
Antoniou, Marina	Superjunction implementations within a 4H-SiC double trench MOSFET structure Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Annealing 4H-SiC Trenches for Superjunction Technology Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Anzalone, Ruggero	Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications
Arena, Giuseppe	Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates
Arena, Giuseppe	Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering
Arimura, Shunsuke	Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Arrizabalaga, Antxon	Latching current limiter for high-power distribution in space enabled by SiC N-MOSFET SiC half-bridge modules to improve efficiency and reduce area of high-power motor drives in space Fast high current sensing SMD resistor network layout for low inductance insertion SiC in space: potential application survey
Asahina, Shunsuke	High Spatial Resolution Analysis of Dislocations in 4H-SiC Using Low Accelerating Voltage Scanning Electron Microscope (SEM)-Cathodoluminescence (CL)
Asano, Natsuko	High Spatial Resolution Analysis of Dislocations in 4H-SiC Using Low Accelerating Voltage Scanning Electron Microscope (SEM)-Cathodoluminescence (CL)
Ashik, Emran	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Ashraf, Huma	SiC Plasma Dicing for Future High Yield Die Singulation
Auditore, Alessandro	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Avramenko, Marina	Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench orientations
Awschalom, David	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Azarov, Alexander	Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
B
Bae, Si-Young	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth
Baek, Dusan	A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics
Baek, Dusan	Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Baek, Sungchul	Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Bahng, Wook	Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs) Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Baier, Leander	On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide
Ball, Dennis	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Balogh, Laszlo	Monitoring of dose, temperature, and energy-dependent damage in Al implanted 4H-SiC by UV photo-modulated reflectance measurement
Bano, Edwige	Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Barbar, Ghassan	A Novel Approach for the Volume Production of Wide-Bandgap Semiconductor
Barletta, Phillip	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Bartolf, Holger	Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC
Basavarajappa, Manjunath	Investigation on the CTE matching of graphite substrates and TaC coating
Basler, Thomas	Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates Investigation of overcurrent turn-off robustness of 1200 V SiC MOSFETs
Bast, Gerhard	DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing
Bathen, Marianne E.	Characterization of the charge state of the silicon vacancy in 4H-SiC using low-energy muon spin spectroscopy
Bathurst, Lara	Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse
Battista, Massimo	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Becker, Tom	On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime
Beijersbergen, Jaap	Rapid thermal anneal with conductive heating for SiC wafers processing
Belanche Guadas, Manuel	Simulation of High-energy Channeling Implantation in 4H-SiC
Bell, Martin	Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Bellocchi, Gabriele	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Bellotti, Enrico	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Bera, Lakshmi Kanta	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Bercu, Nicolas	Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers
Berger, Clément	Argon plasma treatment of 4H-SiC surface before nickel ohmic contacts formation by UV laser annealing
Berger, Clément	SiC for sensing in harsh environments: status, new efforts.
Bergman, Peder	Epitaxial growth of 280 μm thick 4H-SiC on 4°-off substrates for ultra-high-power devices
Bertolini, Mario	Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Bertoni, Mariana	Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse
Bevilacqua, Pascal	Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Beyer, Franziska	ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET
Bharathi, Madurai Srinivasan	Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Bhattacharya, Monikuntala	Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs
Biscarrat, Jérôme	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Biswas, Ayan	Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs Lifetime modeling of MOS based SiC vertical power devices under high voltage blocking stress
Black, Taylor	Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse
Bobal, Viktor	Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Boccarossa, Marco	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations
Boccarossa, Marco	Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device
Bogdanov, Maxim	Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC Epitaxy
Boksteen, Boni	Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Bolat, Sami	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Borghese, Alessandro	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations
Bottari, Cettina	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification
Bouch, Campbell	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals
Boudin, Loann	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates
Brandl, Anja Katerina	Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs Influence of Threshold Voltage Mismatch on Switching Behavior of Parallel SiC Power MOSFETs
Breglio, Giovanni	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations SiC MOSFETs C-V capacitance curves with negative biased Drain
Breuer, Jakob	Challenges of Transient Virtual Junction Temperature Measurement of SiC MOSFETs by VSD(T)-Method for Power Cycling – A Study on Impact Factors
Brezeanu, Gheorghe	ITO/4H-SiC Schottky contacts for UV applications A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching Performances
Briggs, Benjamin	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Britz, David	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Brooks, Britt	A Physics-Based SPICE Model for a SiC Vertical Power MOSFET
Brosselard, Pierre	Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Brzozowski, Ernest	Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy
Bu, Jiankang	On the Characterization of 4H-SiC PiN and JFETs for their USE in High-Voltage Bidirectional Power Devices
Buitrago, Elizabeth	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide First principles study of acceptor impurities in 4H-SiC bulk and interfaces Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Byun, Dongwook	Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Böhm, Christoph	Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates
Böttcher, Norman	Determining Compensation of Implanted Aluminum Dopants in 4H-SiC by Simultaneous Fitting of Charge Carrier Concentration and Mobility
C
Cafra, Brunella	Analysis of mechanical properties of 4H-SiC 6 inch wafers by nanoindentation test
Calabretta, Cristiano	Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Calcagno, Lucia	Heavy ions radiation damage on silicon and silicon carbide detectors
Caldwell, Joshua	Nanoscale infrared spectroscopic characterization of threading dislocations in SiC
Camalleri, Marco	Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Cambré, Sofie	Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Candolfi, Fabio	Investigation of the Stark Effect of TS and E color centers on a-face 4H-SiC
Cannizzaro, Annalisa	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Cano, Jean-Francois	Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench orientations
Cantiano, Massimiliano	Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Cao, Qinze	Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Carbone, Beatrice	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification
Carlson, Charles	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Carter, Samuel	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
Castorina, Maurizio	Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Catalano, Antonio Pio	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench
Catena, Alberto	Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers.
Ceccarelli, Edoardo	Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Cela, Enrica	DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing
Chabi, Sakineh	Near Field Spectroscopy of Silicon Carbide Nanosheets for Novel Application Unleashing the Potential of Low Dimensional Silicon Carbide
Chae-Young, Lee	High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Chang, Chih-Jung	Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs
Chang, Ting-Fu	Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method
Chaouat, Deborah	Characterization of the charge state of the silicon vacancy in 4H-SiC using low-energy muon spin spectroscopy
Charles, William	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Chaturvedula, Durga	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Chau, Tony	Carbon vacancy in commercial junction barrier Schottky diodes
Chehadi, Zeinab	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC
Chen, Huamao	Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs
Chen, Quan-Han	Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
Chen, Xiufang	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Chen, Yongmei	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Chen, Zeyu	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer X-ray Topography Characterization of SiC Crystals aided by Ray Tracing Simulations Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Cheng, Qianyu	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation X-ray Topography Characterization of SiC Crystals aided by Ray Tracing Simulations Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Cherkashin, Nikolay	High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates
Chien, Yu-Chieh	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Cho, Yasuo	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process
Cho, Young-Hun	Performance Enhancement of Cu2O/SiC Heterostructured Diodes Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions
Cho, Young-Hun	Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Choi, Jake	Enhancing Reliability in 1.2kV 4H-SiC Trench MOSFETs: A Comprehensive Study
Choi, Ji-Soo	Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Choi, Jungwoo	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth Optimization of heat transfer design for high quality 4H-SiC ingot growth Process gas control for growth of high-resistant HPSI-SiC crystal High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Choi, Kyeong-Keun	Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Choi, Ye Jin	Filling-design effect of powder source in the crucible on SiC single-crystal growth High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Chow, T. Paul	Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET
Chu, Anh	Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Chu, Kuo-Ting	Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method
Chu, Rongming	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Chua, Hung Ming	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes
Chudzik, Michael	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Chung, Seung-Hwan	Influence of Deposition Techniques on the Electrical properties and Deep level Defect of Ga2O3/SiC heterojunction diode Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths
Chung, Surasit	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Ciampi, Caterina	Heavy ions radiation damage on silicon and silicon carbide detectors
Ciuk, Tymoteusz	Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy
Clair, Maurice	Qualitative study on laser backside ohmic contact formation of a SiC-Ni interface
Clark, David	Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Clark, Jacob W.	Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance Measurements of Deep Level Defects in GaN Schottky Diodes
Cochrane, Corey	Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla sensitivities
Coffa, Salvo	Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Colston, Gerard	Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Annealing 4H-SiC Trenches for Superjunction Technology
Colston, Gerard	Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
Coughlan, Finbarr	A New Era of 8" Silicon-Carbide Wafering
Coutinho, Jose	Analysis of Silicon Vacancy Configurations and their Identification
Criswell, Scott	Nanoscale infrared spectroscopic characterization of threading dislocations in SiC
Croot, Alex	SiC Plasma Dicing for Future High Yield Die Singulation
Csato, Constantin	Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Cui, Shanying	Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform
D
D'Alessandro, Vincenzo	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench
D'Arrigo, Giuseppe	Analysis of mechanical properties of 4H-SiC 6 inch wafers by nanoindentation test
Dail, Steven	Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
Daliento, Santolo	SiC MOSFETs C-V capacitance curves with negative biased Drain
Damcevska, Jenny	SiC Schottky-barrier diode without ion-implanted P-type regions
Dang, Yifan	Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal Growth
Das, Suman	Characterization of interface trap and mobility degradation in SiC MOS devices using gated Hall measurements Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
De Luca, Vivian	Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers.
De Schepper, Luc	Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench orientations
Deboer, Skylar	A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs
Defregger, Stefan	Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization
Derenge, Michael	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Deshpande, Kaustubh	A Novel all-SiC Neural Interface: In-vivo Performance
Di Franco, Salvatore	Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Di Salvo, Antonella	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Dieudonné, Yvonne	Mechanical Behavior of CVD-grown Tantalum Carbide (TaC) Coatings on Graphite Substrates
Dimitrijev, Sima	SiC Schottky-barrier diode without ion-implanted P-type regions
Dixit, Hemant	TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
Dojima, Daichi	The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal defects Development of a novel warpage control method for epi-ready 4H-SiC wafers by depositing homoepitaxial layers on both Si- and C-faces Active planarization method from rough surface of 4º-off 4H-SiC (0001) controlled by step bunching and debunching mechanism using Dynamic AGE-ing® The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates
Dong, Bowen	Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC Investigation on the CTE matching of graphite substrates and TaC coating
Dong, Yu	Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
Dorfer, Christian	Unveiling border trap energetics in a SiO2-SiC system using capacitance based optical excitation spectroscopy
Draghici, Florin	A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching Performances
Draskovic, Thomas	Submicron Diamond Slurry for Polishing Silicon Carbide Wafers
Dresel, Fabian	Challenges of Transient Virtual Junction Temperature Measurement of SiC MOSFETs by VSD(T)-Method for Power Cycling – A Study on Impact Factors
Drouin, Alexis	Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability
Du, Yuxin	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Dudley, Michael	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer X-ray Topography Characterization of SiC Crystals aided by Ray Tracing Simulations Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Dufour, Isabelle	SiC for sensing in harsh environments: status, new efforts.
Dumm, Timothy	Submicron Diamond Slurry for Polishing Silicon Carbide Wafers
Dupre, Mason	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals
Döll, Joachim	3C-SiC on Si substrates by Si and C multilayers transformation
E
Eckardt, Bernd	Challenges of Transient Virtual Junction Temperature Measurement of SiC MOSFETs by VSD(T)-Method for Power Cycling – A Study on Impact Factors
Ekström, Mattias	A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
Eldakrouri, Ashraf	Lateral epitaxial CVD growth of 4H-SiC
Elko, Michael	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Ellison, Alex	New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Elsayed, Ahmed	Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates
Endo, Koichi	Life prediction of SiC-MOSFET by accelerated test using anode hole injection correction
Enjoji, Yuya	Threshold voltage drift mechanism in SiC MOSFETs by photon-assisted electron injection under bipolar AC gate stress
Erlbacher, Tobias	On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide
Erlekampf, Jürgen	Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor
Eto, Kazuma	Study on effect of interfacial pore between seed and graphite holder for physical vapor transport growth of 4H-SiC crystal
Etzelmüller Bathen, Marianne	Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC Analysis of Silicon Vacancy Configurations and their Identification
Eveleens, Geert	Rapid thermal anneal with conductive heating for SiC wafers processing
F
Faisal, Firas	Nitrogen Dopant Incorporation into epitaxial 4H-SiC: Influence of Chemical Vapor Deposition Growth Parameters and Materials Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Fan, Wei	Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC Investigation on the CTE matching of graphite substrates and TaC coating
Fayed, Ayman	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Fehr, David	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Fernandez, Stéphanie	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs
Fidler, Tamara	TCAD Model for Thermal Oxidation of 4H-SiC Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Fiorenza, Patrick	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification Effects of sulfurization on the properties of 4H-SiC Schottky contacts Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Fisher, Matt	Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards
Flatte, Michael	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Flint, Daniel	A simplified method for extracting contact resistivity using the circular transmission line model
Floros, Konstantinos	Prospects and Challenges for SiC Power Devices in MMC-VSC Applications The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs
Fontana, Enzo	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering
Fosso Sob, Brenda	Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor
Fragalà, Maria Elena	Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type 4H-SiC
Fragalà, Maria Elena	Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Franchi, Jimmy	Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench orientations
Franzo', Giorgia	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Frazzetto, Alessia	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Frewin, Christopher	A Novel all-SiC Neural Interface: In-vivo Performance
Friedrich, Jochen	TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal growth
Fuer, Natalija	Extrinsic Gate Reliability of SiC MOSFETs
Fujie, Fumihiro	Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial layers
Fujii, Haruki	Mobility enhancement in SiC n- and p-channel MOSFETs
Fujimoto, Hiroki	Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001)
Fujioka, Hitoshi	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process
Fujita, Jun	Controlled domain in 3C-SiC epitaxial growth on off-oriented 4H-SiC substrate for water splitting
Fujiwara, Hirokazu	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Fujiwara, Taizo	The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates
Fukui, Hiroshi	A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors
Fukui, Yutaka	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface
Fukunaga, Hiroki	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs
Funaki, Nahoto	DFT analysis on the electronic structure of 4H-SiC/SiO2 after NO annealing
Furukawa, Akihiko	Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Furusho, Tomoaki	8-inch thick SiC crystals grown by solution growth method combined with digital twin
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Gajewski, Donald	Lifetime modeling of MOS based SiC vertical power devices under high voltage blocking stress
Gali, Adam	Towards identification of single photon emitters and electro-optical characterization of defects at the 4H-SiC/a-SiO2 interface
Gallagher, James	Using Convolutional Neural Network to Map Defects in SiC
Galloway, Kenneth	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Galyukov, Alex	Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC Epitaxy
Gammon, Peter	Prospects and Challenges for SiC Power Devices in MMC-VSC Applications Superjunction implementations within a 4H-SiC double trench MOSFET structure Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device On the Characterization of 4H-SiC PiN and JFETs for their USE in High-Voltage Bidirectional Power Devices Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Annealing 4H-SiC Trenches for Superjunction Technology Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Ganguly, Satyaki	Lifetime modeling of MOS based SiC vertical power devices under high voltage blocking stress
Garrett, Greg	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Gelineau, Guillaume	Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Gergaud, Patrice	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC
Gersappe, Dilip	Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Ghandi, Reza	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity Deep Implanted SiC Super-Junction Technology
Ghezellou, Misagh	Epitaxial growth of 280 μm thick 4H-SiC on 4°-off substrates for ultra-high-power devices Analysis of Silicon Vacancy Configurations and their Identification
Ghezellou, Misagh	Lateral epitaxial CVD growth of 4H-SiC
Ghouila-Houri, Cécile	SiC for sensing in harsh environments: status, new efforts.
Giannazzo, Filippo	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification Effects of sulfurization on the properties of 4H-SiC Schottky contacts Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Giuffrida, Stella	Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers.
Gningue, Saliou	Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Godignon, Philippe	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Goel, Sudhanshu	Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates
Goldberg, Andrew	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals
Goncalves de Medeiros, Helton	Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC
Gong, Xiao	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance
Goovaerts, Etienne	Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Gossmann, Hans	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Gott, James A.	Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
Gottscholl, Andreas	Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla sensitivities
Graham, Andrew	Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
Greco, Giuseppe	Effects of sulfurization on the properties of 4H-SiC Schottky contacts Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Grossner, Ulrike	Extrinsic Gate Reliability of SiC MOSFETs Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide Unveiling border trap energetics in a SiO2-SiC system using capacitance based optical excitation spectroscopy Simulation of High-energy Channeling Implantation in 4H-SiC Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors Heavy-ion irradiation effects in 4H-SiC unipolar devices Analysis of Silicon Vacancy Configurations and their Identification Characterization of the charge state of the silicon vacancy in 4H-SiC using low-energy muon spin spectroscopy Influence of Threshold Voltage Mismatch on Switching Behavior of Parallel SiC Power MOSFETs Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Guarnera, Alfio	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Guha, Supratik	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Guigoz, Vincent	SiC for sensing in harsh environments: status, new efforts.
Guimerá Coll, Pablo	Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse
Guiot, Eric	Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates
Gum, Jeffrey	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
Gumaelius, Krister	Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench orientations
Gunn, Robert	Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
Gupta, Utsav	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Gutierrez, Liliana	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Guy, Owen James	SiC Plasma Dicing for Future High Yield Die Singulation
H
Haasmann, Daniel	SiC Schottky-barrier diode without ion-implanted P-type regions
Haber, Carl	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Habersat, Daniel	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Hajzus, Jenifer	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
Hajzus, Jenifer	Investigation of Dry Transfer of Epitaxial Graphene from SiC(0001) Basal Plane Dislocation Mitigation via Annealing and Growth Interrupts
Halkali, Celine	Atomistic defect modeling in SiC for crystal growth optimization
Hallén, Anders	Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type 4H-SiC Epitaxial growth of 280 μm thick 4H-SiC on 4°-off substrates for ultra-high-power devices Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Hamann, Danielle	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals
Hammer, René	Integrated Approach to SiC Crystal Growth: Multiphysics Modeling and Chemistry Assessment in PVT Furnaces Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization Atomistic defect modeling in SiC for crystal growth optimization ML-based Surrogate Model for Temperature Prediction and Efficient Parameter Calibration of PVT Simulations
Han, Jisheng	SiC Schottky-barrier diode without ion-implanted P-type regions
Han, Sung-Woong	Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Han, Yong	Development and Demonstration of a High Temperature and High Performance Dual Side Cooling SiC Power Module for Automotive Application
Hara, Masahiro	Formation of Ti-based ohmic contacts on n-type SiC with ρC= 6*10^{-8} Ωcm^2
Harada, Shinsuke	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Suppression of Short-Channel Effects by Self-Aligned Process for SiC UMOSFETs with Channel Length of under 0.3 μm Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces An approach on the void-free refill of 4H-SiC trench by CVD Physically Based Mobility Model for SiC MOSFETs in TCAD Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Harada, Shunta	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation Role of Point Defects in Suppressing Stacking Fault Expansion through Helium and Proton Implantation in SiC Epitaxial Layer
Harada, Shunta	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth Proton implantation into substrate and stacking faults in epitaxial layers Hydrogen and point defect introduction into 4H-SiC by plasma treatment Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation
Harada, Shunta	Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal Growth
Harris, Phoenix	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Hart, Daniel	Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis
Haruko, Toyama	Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing
Hassanbee, Zareena	Dependence of epi defects on surface preparation by plasma techniques.
Hassdorf, Ralf	Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension
Hatakeyama, Tetsuo	Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces Physically Based Mobility Model for SiC MOSFETs in TCAD
Hatta, Naoki	Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices
Hayashi, Shohei	Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of 4H-SiC wafers
He, Zhaowen	Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET
Hebert, Francois	Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate
Heide, Christian	Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification
Heimler, Patrick	Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates
Heiss, Heinrich	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Hellinger, Carsten	Formation of structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing
Hendricks, Nolan	Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Hengel, Philipp	Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Hens, Philip	Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor
Heremans, F. Joseph	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Hess, Kevin	Advanced diagnostics for rapid process development
Higashi, Shunto	Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET
Higashi, Yuta	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices
Hijikata, Yasuto	Polarization control of SiO2/SiC interfacial single-photon sources by oxygen pressure during thermal oxidation
Hirai, Hirohisa	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs Carbon-related interface defects in p-channel 4H-SiC MOSFETs Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces Physically Based Mobility Model for SiC MOSFETs in TCAD
Hirai, Hirohisa	Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
Hirano, Shunya	Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Hitchcock, Collin	Deep Implanted SiC Super-Junction Technology
Ho, Garrick	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC
Hoang, Duc Quang	Evolution of photoluminescence and optically detected magnetic resonance spectra of divacancy defects in 4H-SiC from cryogenic to room temperatures
Hobart, Karl	Using Convolutional Neural Network to Map Defects in SiC
Hochreiter, André	Monolithic fabrication of 4H-SiC micromechanical devices by electrochemical etching and characterization of vibrational modes
Hoehl, Arne	Nanoscale infrared polytype layer analysis and charge carrier profiling
Hofer, Sebastian	Automatic etch pit detection and characterization in KOH etch images of 4H-SiC using deep learning Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization
Hoffmann, Klaus	Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension
Hofmann, Michael	Optimization of SiC growth processes by using insights of inductive SiC inspection
Holland, Steve	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Holmwood Benito, Kelly	Mechanical Behavior of CVD-grown Tantalum Carbide (TaC) Coatings on Graphite Substrates
Holub, Georg	Automatic etch pit detection and characterization in KOH etch images of 4H-SiC using deep learning Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization Atomistic defect modeling in SiC for crystal growth optimization
Hommelhoff, Peter	Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification
Hong, Soon-Ku	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Horiuchi, Sosuke	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs Carbon-related interface defects in p-channel 4H-SiC MOSFETs
Horn, Connor	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Hosseinzadehlish, Mana	Prospects and Challenges for SiC Power Devices in MMC-VSC Applications The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs
Houshmand, Shiva	Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs
Hsiao, Yi-Kai	Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
Hsu, Fu-Jen	Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method
Hsu, Kai-Wen	Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
Hsu, Wen-Ching	200mm n-type SiC Uniform Low BPD in Their Whole Crystal Technology
Hu, Guojie	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Hu, Jia-Wei	Design Optimization of a 6.5 kV Split-Gate p-Channel 4H-SiC IGBT
Hu, Shanshan	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation X-ray Topography Characterization of SiC Crystals aided by Ray Tracing Simulations Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Hu, Xiaobo	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Hu, Xue-Fen	Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs
Huang, Alex	Analysis of Ohmic contacts simultaneously formed on both n-type and p-type 4H-SiC
Huang, Bing	Towards identification of single photon emitters and electro-optical characterization of defects at the 4H-SiC/a-SiO2 interface
Huang, Biqin	Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform
Huang, Chih-Fang	Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method Design Optimization of a 6.5 kV Split-Gate p-Channel 4H-SiC IGBT
Huang, Helin	High Removal Rate Silicon Carbide (SiC) Slurry
Huang, Huai-Lin	Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
Huang, Shin-Yi	Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs
Huck, Yan	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Hull, Brett	Lifetime modeling of MOS based SiC vertical power devices under high voltage blocking stress
Hung, Chia-Lung	Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
Hung, Hsiang-Ting	Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method
Hunter, Gary	Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis
Hutson, John	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Hwang, Hyeon Ju	Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Hwang, Seung-Jae	Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide
I
Iatosti, Christophe	New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Ichikawa, Yoshihito	Impact of electron irradiation on SiC power MOSFET performance
Igarashi, Yasuyuki	Numerical analysis of correlation between UV irradiation and current injection on bipolar degradation in PiN diodes How to simulate bipolar degradation by UV irradiation with high accuracy Study on conversion of survived BPDs in epitaxial layer to TEDs
Iijima, Akifumi	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface
Iijima, Ryosuke	Suppression of Short-Channel Effects by Self-Aligned Process for SiC UMOSFETs with Channel Length of under 0.3 μm
Iizasa, Daisuke	Impact of transition from full- to semi-superjunction structure on the performance limit of 4H-SiC devices
Im, Youngbin	The investigation of effective thermal oxidation to SiC MOSFET gate oxide quality improvement
Imai, Akifumi	Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Imamura, Tomomi	Effect of intervening layer insertion on Φb reduction in TiN Schottky
Ingenito, Andrea	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs
Inoue, Akira	Effect of counter-doping on threshold voltage and mobility in SiC p-channel MOSFETs
Inoue, Yuta	Kinematical parameters determining the nitrogen doping uniformity during physical vapor transport growth of 4H-SiC crystals
Irace, Andrea	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations SiC MOSFETs C-V capacitance curves with negative biased Drain
Ishibashi, Hiroyuki	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Ishibashi, Kazuya	Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Ishibashi, Naoto	Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial layers
Ishikawa, Ryoya	Low-field and high-field anisotropic electron transport in 4H-SiC
Ishikawa, Seiji	Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃ Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET
Ishikawa, Seiji	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices
Isshiki, Toshiyuki	Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of 4H-SiC wafers
Isukapati, Sundar	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Ito, Ryoma	Effect of counter-doping on threshold voltage and mobility in SiC p-channel MOSFETs
Ivanov, Ivan G.	Evolution of photoluminescence and optically detected magnetic resonance spectra of divacancy defects in 4H-SiC from cryogenic to room temperatures
Ivanova, Tatiana	ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET
Iwai, Toshitatsu	Highly spatially resolved photoluminescence characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals
Iwamoto, Sosuke	Impurity-vacancy complexes in 4H-SiC: stability and properties
Iwamoto, Sosuke	Investigation of oxygen-related defects in 4H-SiC from ab initio calculations
Iwamuro, Noriyuki	Threshold voltage drift mechanism in SiC MOSFETs by photon-assisted electron injection under bipolar AC gate stress Impact of electron irradiation on SiC power MOSFET performance
Iwata, Manami	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Izumi, Satoshi	Clustering tendencies of C atoms in SiO2 matrix with different O-containing conditions: molecular dynamics study with a universal neural network potential Molecular Dynamics Simulation Approach to H2 Etching Process on SiC
Izvarin, Ievgen	Graphite an Enabler for Single Crystal SiC Growth
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Jahdi, Saeed	Prospects and Challenges for SiC Power Devices in MMC-VSC Applications The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs
Jang, Donghyun	Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Jang, Seung	A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Javanainen, Arto	Heavy-ion irradiation effects in 4H-SiC unipolar devices Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Jayaprakash, Hitesh	Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Jeong, Ha Bin	Monitoring of dose, temperature, and energy-dependent damage in Al implanted 4H-SiC by UV photo-modulated reflectance measurement Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs)
Jeong, Min-Ju	Performance Enhancement of Cu2O/SiC Heterostructured Diodes
Jeong, Seong-Min	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth
Jeong, Seong-Min	Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth
Jeong, Seyoon	Development of a novel warpage control method for epi-ready 4H-SiC wafers by depositing homoepitaxial layers on both Si- and C-faces
Jeong, Woon-Hyeon	Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth
Ji, Shiyang	An approach on the void-free refill of 4H-SiC trench by CVD
Ji, Yuanyuan	Unclamped Inductive Switching in SiC MOSFETs and Diodes: Implications for Standards, Testing, and Screening
Jin, Michael	Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs
Jinghe Yang, Jinghe Yang	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Johnson, Sam	A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process
Johnsson, Anna	TCAD Model for Thermal Oxidation of 4H-SiC
Jones, Andrew	Near Field Spectroscopy of Silicon Carbide Nanosheets for Novel Application
Jones, Ben	SiC Plasma Dicing for Future High Yield Die Singulation
Jozwik, Iwona	Using in-situ nanoprobing in the scanning electron microscope to visualize the local potential on a biased SiC p-n junction
Ju, Meongkeun	Development and scale-up of 200mm 4H SiC crystals
Jung, Carl	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC
Jung, Hyundon	Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Jung, Kwang Hee	Filling-design effect of powder source in the crucible on SiC single-crystal growth
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Kabelaan, Loic	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates
Kadoya, Shotaro	Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Kagawa, Yasuhiro	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Kagoshima, Eiji	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Kallinger, Birgit	Homoepitaxy of 4H-SiC on a-plane substrates Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor
Kam, Jasmine Woo Yuen	Study of SiC trench etching characteristics for different crystal planes
Kam, Shane	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates
Kamber, Derrick	Silicon Carbide Epitaxial Growth Performance on 350um and 500um Thick 200mm Substrates
Kamei, Kazuhito	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Kamihata, Shinji	Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001)
Kaminski, Pawel	Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy
Kamishetty, Saideep	Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse
Kanazawa, Hiroshi	Review for Resonac’s SiC Epiwafer Development
Kanda, Takahiro	Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process Informatics
Kaneko, Mitsuaki	Mobility enhancement in SiC n- and p-channel MOSFETs Doping-dependent fixed charges in SiC MOSFETs Low-field and high-field anisotropic electron transport in 4H-SiC Formation of Pt ohmic contacts on p-type SiC with low contact resistivity by 600°C-annealing process Formation of Ti-based ohmic contacts on n-type SiC with ρC= 6*10^{-8} Ωcm^2
Kaneko, Mitsuaki	Effect of counter-doping on threshold voltage and mobility in SiC p-channel MOSFETs
Kaneko, Tadaaki	The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal defects Development of a novel warpage control method for epi-ready 4H-SiC wafers by depositing homoepitaxial layers on both Si- and C-faces Active planarization method from rough surface of 4º-off 4H-SiC (0001) controlled by step bunching and debunching mechanism using Dynamic AGE-ing®
Kaneko, Tadaaki	The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates
Kanemura, Takashi	Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process Informatics
Kang, Dae-Hwan	Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Kang, Gyuhyeok	A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Kang, Hyemin	Effect of Chip Size on Reverse Recovery of SiC MOSFETs with Edge Termination
Kang, Kuan-Min	Design Optimization of a 6.5 kV Split-Gate p-Channel 4H-SiC IGBT
Kang, Min Gyu	Filling-design effect of powder source in the crucible on SiC single-crystal growth Optimization of heat transfer design for high quality 4H-SiC ingot growth
Kang, Min Jae	Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates
Karhu, Robin	Homoepitaxy of 4H-SiC on a-plane substrates Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor
Karpova, Daria	Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC Epitaxy
Kato, Fumiki	Life prediction of SiC-MOSFET by accelerated test using anode hole injection correction
Kato, Masashi	Proton implantation into substrate and stacking faults in epitaxial layers Hydrogen and point defect introduction into 4H-SiC by plasma treatment Controlled domain in 3C-SiC epitaxial growth on off-oriented 4H-SiC substrate for water splitting Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation Role of Point Defects in Suppressing Stacking Fault Expansion through Helium and Proton Implantation in SiC Epitaxial Layer
Kato, Tomohisa	An Ohmic Contact for SiC-based P-channel HFET Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Study on effect of interfacial pore between seed and graphite holder for physical vapor transport growth of 4H-SiC crystal High Current Pulse Power Operation of 12 kV SiC Thyristors
Katte, Henning	Photoelastic measurement of residual stress in 4H-SiC substrates for evaluation of crystal growth and wafering process
Kauth, Julian	Determining Compensation of Implanted Aluminum Dopants in 4H-SiC by Simultaneous Fitting of Charge Carrier Concentration and Mobility
Kawase, Michio	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation
Kayang, Kevin	Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Kennely, Stacey	Deep Implanted SiC Super-Junction Technology
Kerdilès, Sébastien	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC
Kern, Michal	Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Kern, Sylvain	SiC for sensing in harsh environments: status, new efforts.
Kim, Chung	Submicron Diamond Slurry for Polishing Silicon Carbide Wafers
Kim, Dongkyun	Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Kim, Dongyoung	Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Kim, Howard	Enhancing Reliability in 1.2kV 4H-SiC Trench MOSFETs: A Comprehensive Study
Kim, Hyoung Woo	Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs) Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions
Kim, Hyunjun	Progress in etching methods of SiC wafer
Kim, Inkyu	The investigation of effective thermal oxidation to SiC MOSFET gate oxide quality improvement
Kim, Jeff	A simplified method for extracting contact resistivity using the circular transmission line model
Kim, Ji-Hyun	Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Kim, Ji-Hyun	Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths
Kim, Ji-Hyun	Influence of Deposition Techniques on the Electrical properties and Deep level Defect of Ga2O3/SiC heterojunction diode
Kim, Jingon	Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Kim, Jinhun	A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Kim, Jong Min	TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
Kim, Joon	Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Kim, Jung Hun	Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions
Kim, Jung-Gyu	Optimization of heat transfer design for high quality 4H-SiC ingot growth Process gas control for growth of high-resistant HPSI-SiC crystal High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Kim, Kyunghwan	Densification & Single Side Polishing application for improvement of high-level wafer warpage in SiC substrate.
Kim, Min-Yeong	Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Kim, Myeonggyun	Densification & Single Side Polishing application for improvement of high-level wafer warpage in SiC substrate.
Kim, Na Kyeoung	Filling-design effect of powder source in the crucible on SiC single-crystal growth
Kim, Sangyeob	Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking capability A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Kim, Seong Hyun	TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
Kim, Seongjun	Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Kim, Su-Ho	Optimization of heat transfer design for high quality 4H-SiC ingot growth Process gas control for growth of high-resistant HPSI-SiC crystal High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Kim, Taehee	Development and scale-up of 200mm 4H SiC crystals
Kim, Woo Yeon	Factors to determine resistance characteristics of semi-insulating SiC single crystal
Kim, Ye-Jin	Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Kim, Yeonjun	Effect of Chip Size on Reverse Recovery of SiC MOSFETs with Edge Termination
Kim, Young Chul	TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
Kim, Young Heon	Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Kim, Young Jo	Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs)
Kim, Youngsang	Spectral Investigation of Various Stacking Faults After Epitaxial Growth of 180m Thick Layer on 4H-SiC substrates Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer
Kimoto, Shinichi	Suppression of Short-Channel Effects by Self-Aligned Process for SiC UMOSFETs with Channel Length of under 0.3 μm
Kimoto, Tsunenobu	Doping-dependent fixed charges in SiC MOSFETs Formation of Pt ohmic contacts on p-type SiC with low contact resistivity by 600°C-annealing process
Kimoto, Tsunenobu	Mobility enhancement in SiC n- and p-channel MOSFETs 4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process Low-field and high-field anisotropic electron transport in 4H-SiC Formation of Ti-based ohmic contacts on n-type SiC with ρC= 6*10^{-8} Ωcm^2
Kimoto, Tsunenobu	Monte Carlo analyses on impact ionization coefficients in 4H-SiC
Kimoto, Tsunenobu	Effect of counter-doping on threshold voltage and mobility in SiC p-channel MOSFETs
Kimura, Yoshitaka	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface
Kiritani, Kazuya	Active planarization method from rough surface of 4º-off 4H-SiC (0001) controlled by step bunching and debunching mechanism using Dynamic AGE-ing®
Kitahara, Koki	Partial dislocation-induced surface irregularities observed on 4H-SiC homoepitaxial layers
Klein, Marcus	Optimization of SiC growth processes by using insights of inductive SiC inspection
Klipfel, Nadja	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs
Kobayashi, Keisuke	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Kobayashi, Kenji	Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of 4H-SiC wafers
Kobayashi, Motoki	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices
Kobayashi, Takuma	Impurity-vacancy complexes in 4H-SiC: stability and properties Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress Investigation of oxygen-related defects in 4H-SiC from ab initio calculations
Kobayashi, Takuma	Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001)
Kobayashi, Takuma	Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
Kobelev, Anton	Analysis of SiO2 Mask Shape Effect on SiC Trench Deformation in Biased SF6/O2 Inductively Coupled Plasma
Koch, Robert	Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Kochtcheev, Serguei	Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers
Kojima, Kazutoshi	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate High Current Pulse Power Operation of 12 kV SiC Thyristors An approach on the void-free refill of 4H-SiC trench by CVD SiC CMOS Active Pixel Sensors with Embedded UV Photodiode Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices
Konishi, Kumiko	High Current Pulse Power Operation of 12 kV SiC Thyristors Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC MOSFETs
Kono, Hiroshi	Effect of intervening layer insertion on Φb reduction in TiN Schottky
Kono, Kazushi	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface
Kononchuk, Oleg	High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates
Koo, Sang-Mo	Performance Enhancement of Cu2O/SiC Heterostructured Diodes Influence of Deposition Techniques on the Electrical properties and Deep level Defect of Ga2O3/SiC heterojunction diode Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions
Koo, Yerim	Densification & Single Side Polishing application for improvement of high-level wafer warpage in SiC substrate.
Koos, Antal	Effects of sulfurization on the properties of 4H-SiC Schottky contacts
Kornmeyer, Torsten	TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal growth
Kosciewicz, Kinga	Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy
Kosier, Steven	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Kotagama, Virendra Malin	Superjunction implementations within a 4H-SiC double trench MOSFET structure
Kotra, Kamil	Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension
Kouzminov, Dimitry	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Kovacevic-Badstuebner, Ivana	Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors Influence of Threshold Voltage Mismatch on Switching Behavior of Parallel SiC Power MOSFETs
Koyanagi, Kaho	Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
Kozlowski, Roman	Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy
Krainer, Siegfried	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Kramm, Benedikt	Advanced diagnostics for rapid process development
Kranert, Christian	Photoelastic measurement of residual stress in 4H-SiC substrates for evaluation of crystal growth and wafering process
Krasowski, Michael	Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
Kraus, Hannes	Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla sensitivities
Krause, Sandra	Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on SiC
Krieger, Michael	Monolithic fabrication of 4H-SiC micromechanical devices by electrochemical etching and characterization of vibrational modes Investigation of the Stark Effect of TS and E color centers on a-face 4H-SiC Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification
Krippendorf, Florian	Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Ku, Kap-Ryeol	Optimization of heat transfer design for high quality 4H-SiC ingot growth Process gas control for growth of high-resistant HPSI-SiC crystal High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Kubley, Thomas	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Kuboya, Shigeyuki	An Ohmic Contact for SiC-based P-channel HFET Study on effect of interfacial pore between seed and graphite holder for physical vapor transport growth of 4H-SiC crystal
Kuhr, Tom	Silicon Carbide Epitaxial Growth Performance on 350um and 500um Thick 200mm Substrates
Kumar, Ashish	A simplified method for extracting contact resistivity using the circular transmission line model
Kumar, Piyush	Extrinsic Gate Reliability of SiC MOSFETs Electrical characterization of SiO2/4H-SiC interfaces with an ion implanted oxide Unveiling border trap energetics in a SiO2-SiC system using capacitance based optical excitation spectroscopy Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors Analysis of Silicon Vacancy Configurations and their Identification Characterization of the charge state of the silicon vacancy in 4H-SiC using low-energy muon spin spectroscopy
Kumar, Shiv	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Kumar, Shiv	Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance
Kupper, Rishi	Extrinsic Gate Reliability of SiC MOSFETs
Kurashige, Kazuo	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Kuroiwa, Takeharu	Fabrication of the planer SiC gate-all-around JFET with channel dose modulation
Kurokawa, Yasuyoshi	Hydrogen and point defect introduction into 4H-SiC by plasma treatment
Kuroki, Shin-Ichiro	Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃ Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET Fabrication of the planer SiC gate-all-around JFET with channel dose modulation SiC CMOS Active Pixel Sensors with Embedded UV Photodiode
Kutsukake, Kentaro	Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal Growth
Kutsuki, Katsuhiro	Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing
Kutsuki, Katsuhiro	Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
Kutznetsov, Vladimir	Rapid thermal anneal with conductive heating for SiC wafers processing
Kuwahara, Kotaro	Formation of Pt ohmic contacts on p-type SiC with low contact resistivity by 600°C-annealing process Formation of Ti-based ohmic contacts on n-type SiC with ρC= 6*10^{-8} Ωcm^2
Kyun, Myung-Ok	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth
Kästner, Bernd	Nanoscale infrared polytype layer analysis and charge carrier profiling
Köhler, Johannes	Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor
Körber, Jonathan	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
L
La Via, Francesco	Stress fields distribution and simulation in 3C-SiC (111) resonators Heavy ions radiation damage on silicon and silicon carbide detectors
Laborie, Leo	Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Ladd, Thaddeus	Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform
Lagowski, Jacek	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Laha, Sibasish	Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices
Lai, Chih-Ming	Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs
Laird, Ian	The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery
Landru, Didier	High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates
Lang, Michael	TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal growth
Larcher, Luca	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Laudani, Antonio	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Lavieville, Romain	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Lazar, Mihai	Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Le Cunff, Maëlle	High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates
Le Royer, Cyrille	Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Le Tiec, Remi	Defects characterization and mitigation through the trench gate patterning process
Lee, An Min Amanda	Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Lee, Bongmook	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Lee, Brian	Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Lee, Chungkwang	Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Lee, Geon-Hee	Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Lee, Geon-Hee	Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Lee, Gi Uk	Filling-design effect of powder source in the crucible on SiC single-crystal growth Process gas control for growth of high-resistant HPSI-SiC crystal
Lee, Gwan-Hyoung	Progress in etching methods of SiC wafer
Lee, Gyu Do	Factors to determine resistance characteristics of semi-insulating SiC single crystal
Lee, Hee Bae	TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
Lee, Ho-Lam	Carbon vacancy in commercial junction barrier Schottky diodes
Lee, Hojung	Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Lee, Hyun-Woo	Performance Enhancement of Cu2O/SiC Heterostructured Diodes
Lee, Hyun-Woo	Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures
Lee, Hyung Ik	Progress in etching methods of SiC wafer
Lee, Jieun	TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
Lee, Jungmin	Progress in etching methods of SiC wafer
Lee, Kung-Yen	Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs
Lee, Kwangwon	Enhancing Reliability in 1.2kV 4H-SiC Trench MOSFETs: A Comprehensive Study
Lee, Man Young	Progress in etching methods of SiC wafer
Lee, Sang-Yun	Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide
Lee, Seung-June	Optimization of heat transfer design for high quality 4H-SiC ingot growth Process gas control for growth of high-resistant HPSI-SiC crystal High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Lee, Tae-Hee	Performance Enhancement of Cu2O/SiC Heterostructured Diodes Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Lee, Won Jae	Filling-design effect of powder source in the crucible on SiC single-crystal growth Optimization of heat transfer design for high quality 4H-SiC ingot growth Process gas control for growth of high-resistant HPSI-SiC crystal High-quality SiC crystal growth by the control of cooldown rate at cooling stage Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth
Lee, Yu Jeong	Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Lehmeyer, Johannes	Investigation of the Stark Effect of TS and E color centers on a-face 4H-SiC
Leib, Jürgen	Challenges of Transient Virtual Junction Temperature Measurement of SiC MOSFETs by VSD(T)-Method for Power Cycling – A Study on Impact Factors Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices
Leist, Jon	Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC Investigation on the CTE matching of graphite substrates and TaC coating
Leitgeb, Markus	DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation High-temperature adhesive bonding of 4H-SiC substrates
Lekavicius, Ignas	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
Lenahan, Patrick	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Lenahan, Patrick M.	Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance Measurements of Deep Level Defects in GaN Schottky Diodes
Lennartz, Jeff	Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC Investigation on the CTE matching of graphite substrates and TaC coating
Lettens, Jan	Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Levi, Shimon	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices Characterization of SiC trenches using innovative 3D CDSEM Defects characterization and mitigation through the trench gate patterning process
Li, Chenxuan	High Removal Rate Silicon Carbide (SiC) Slurry
Li, Qiliang	Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Li, Song	Towards identification of single photon emitters and electro-optical characterization of defects at the 4H-SiC/a-SiO2 interface
Li, Tong	Hydrogen and point defect introduction into 4H-SiC by plasma treatment Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Li, Tong	Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization
Li, Xinyi	Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Liao, Pei-Chun	Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs
Licciardello, Antonino	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Lichtenwalner, Daniel J.	Characterization of interface trap and mobility degradation in SiC MOS devices using gated Hall measurements Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs Lifetime modeling of MOS based SiC vertical power devices under high voltage blocking stress TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs A simplified method for extracting contact resistivity using the circular transmission line model
Liguda, Christian	Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices
Lilja, Louise	New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Lim, Jihun	A Physics-Based SPICE Model for a SiC Vertical Power MOSFET
Lim, Minwho	Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope
Lim, See Kiat	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC
Lin, Ching Shan	200mm n-type SiC Uniform Low BPD in Their Whole Crystal Technology
Lin, Huamao	Study of SiC trench etching characteristics for different crystal planes
Lin, Tianxiang	Carbon vacancy in commercial junction barrier Schottky diodes
Lin, Yi-Jie	Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
Ling, Francis	Carbon vacancy in commercial junction barrier Schottky diodes
Liu, Di	Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide
Liu, Hongchao	Unclamped Inductive Switching in SiC MOSFETs and Diodes: Implications for Standards, Testing, and Screening
Liu, Ryan	Silicon Carbide Epitaxial Growth Performance on 350um and 500um Thick 200mm Substrates
Liu, Tianshi	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Liu, Yafei	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals Threading Dislocation Behavior in the Facet Region of PVT-Grown 4H-SiC Crystals
Liu, Yen-Cheng	Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs
Liu, Yisi	The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery
Liyuan, Liu	Study of SiC trench etching characteristics for different crystal planes
Lo Sciuto, Antonino	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Lophitis, Neo	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench
Lord, James S.	Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Lu, Lu	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC
Ludtke, Ingo	Prospects and Challenges for SiC Power Devices in MMC-VSC Applications The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs
Lutz, Josef	Investigation of overcurrent turn-off robustness of 1200 V SiC MOSFETs
M
Ma, Xiaofan	A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
Mabuchi, Yuichiro	Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial layers
MacIntosh, Douglas	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals
Mack, Shawn	Investigation of Dry Transfer of Epitaxial Graphene from SiC(0001)
Maddi, Hema Lata Rao	Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate
Maeda, Keishiro	Formation of Ti-based ohmic contacts on n-type SiC with ρC= 6*10^{-8} Ωcm^2
Maeda, Tomonori	Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃ Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET
Maerz, Martin	Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices
Magnusson, Björn	Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers.
Mahadev, Niraj	High Removal Rate Silicon Carbide (SiC) Slurry
Mahadik, Nadeemullah	Nanoscale infrared spectroscopic characterization of threading dislocations in SiC Spectral Investigation of Various Stacking Faults After Epitaxial Growth of 180m Thick Layer on 4H-SiC substrates Epitaxial growth of 280 μm thick 4H-SiC on 4°-off substrates for ultra-high-power devices Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer Using Convolutional Neural Network to Map Defects in SiC Basal Plane Dislocation Mitigation via Annealing and Growth Interrupts
Maira, Giovanni	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification
Makino, Takahiro	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Malta, Giuliana	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Malzer, Stefan	Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification
Mancini, Stephen	Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs
Mancuso, Paola	Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Manning, Ian	Development and scale-up of 200mm 4H SiC crystals
Maresca, Luca	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations SiC MOSFETs C-V capacitance curves with negative biased Drain
Marinskiy, Dmitriy	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
Marschall, Manuel	Nanoscale infrared polytype layer analysis and charge carrier profiling
Martin, Eric	All-Optical Volumetric Imaging of Killer Defects in a SiC Epilayer
Martinella, Corinna	Extrinsic Gate Reliability of SiC MOSFETs Heavy-ion irradiation effects in 4H-SiC unipolar devices Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Martirosyan, Naira S.	Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization
Martí Hidalgo, Inés	Simulation of High-energy Channeling Implantation in 4H-SiC
Masante, Cédric	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC
Mastro, Michael	Using Convolutional Neural Network to Map Defects in SiC
Masui, Shuzo	Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Matacena, Ilaria	SiC MOSFETs C-V capacitance curves with negative biased Drain
Matsubara, Yasutaka	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation
Matsukawa, Shinya	A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors
Matsuki, Kotaro	Impact of electron irradiation on SiC power MOSFET performance
Matsushima, Kiyoshi	A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors
Matsushita, Yohsuke	Numerical analysis of correlation between UV irradiation and current injection on bipolar degradation in PiN diodes How to simulate bipolar degradation by UV irradiation with high accuracy
Matsushita, Yuichiro	Carbon-related interface defects in p-channel 4H-SiC MOSFETs
Mawby, Phil	Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Annealing 4H-SiC Trenches for Superjunction Technology
Maximenko, Sergey	Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards
Megalini, Ludovico	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Meguro, Tatsuya	Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET SiC CMOS Active Pixel Sensors with Embedded UV Photodiode
Mellor, Phil	The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Transients & Reverse Recovery Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs
Melnyk, Kyrylo	Superjunction implementations within a 4H-SiC double trench MOSFET structure Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device
Melton, Matthew	A Novel all-SiC Neural Interface: In-vivo Performance
Mendes Martins, Maria	Characterization of the charge state of the silicon vacancy in 4H-SiC using low-energy muon spin spectroscopy
Mendes Martins, Maria Ines	Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC
Merkle, Arno	Sonic Lift-off of 50μm-thick layers to Replace Backgrinding and Enable 4H-SiC Substrate Reuse
Michaud, Jean-François	Argon plasma treatment of 4H-SiC surface before nickel ohmic contacts formation by UV laser annealing
Michaud, Jean-François	SiC for sensing in harsh environments: status, new efforts.
Micheletto, Ruggero	First principles study of acceptor impurities in 4H-SiC bulk and interfaces
Michihata, Masaki	Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Mihalache, Iuliana	ITO/4H-SiC Schottky contacts for UV applications
Mihara, Hiroshi	The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal defects The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates
Mikami, Kyota	Mobility enhancement in SiC n- and p-channel MOSFETs Doping-dependent fixed charges in SiC MOSFETs
Mikami, Kyota	Effect of counter-doping on threshold voltage and mobility in SiC p-channel MOSFETs
Mikhaylov, Aleksey	Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on SiC
Mikolajick, Thomas	Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on SiC
Miller, Andrei	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Mio, Antonio Massimiliano	Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Misra, Veena	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Mitani, Takeshi	Study on effect of interfacial pore between seed and graphite holder for physical vapor transport growth of 4H-SiC crystal
Mitchell, Jacob	SiC Plasma Dicing for Future High Yield Die Singulation
Mitic, Slobodan	Advanced diagnostics for rapid process development
Miura, Hitoshi	Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal Growth
Miyakaze, Risa	A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors
Miyazaki, Sakurako	Clustering tendencies of C atoms in SiO2 matrix with different O-containing conditions: molecular dynamics study with a universal neural network potential
Mizutani, Seiji	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation
Mizutani, Seiya	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation
Mizutani, Yuya	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation
Moeggenborg, Kevin	A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process
Moens, Peter	Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs Ultra-fast bias temperature instability and charge pumping studies of SiC trench MOSFETs with varying trench orientations
Mohney, Suzanne E.	Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance Measurements of Deep Level Defects in GaN Schottky Diodes
Momeni, Davood	Unclamped Inductive Switching in SiC MOSFETs and Diodes: Implications for Standards, Testing, and Screening
Momeni, Davood	Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices
Moon, Jeong Hyun	Monitoring of dose, temperature, and energy-dependent damage in Al implanted 4H-SiC by UV photo-modulated reflectance measurement Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs) Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions
Moon, Youngboo	Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs)
Morel, Hervé	Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Morgan, Adam	A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs
Morgan, Adam	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Mori, Nobuya	Monte Carlo analyses on impact ionization coefficients in 4H-SiC
Mori, Seigo	Impact of transition from full- to semi-superjunction structure on the performance limit of 4H-SiC devices
Mori, Yuki	Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC MOSFETs
Morita, Takuya	Numerical analysis of correlation between UV irradiation and current injection on bipolar degradation in PiN diodes How to simulate bipolar degradation by UV irradiation with high accuracy
Moser, Maximilian	Using in-situ nanoprobing in the scanning electron microscope to visualize the local potential on a biased SiC p-n junction
Moser, Neil	Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Moyers, Kelly	Lateral epitaxial CVD growth of 4H-SiC
Mudiyanselage, Dinuth C. Y. B. Yapa	Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Mueller, Malte	A New Era of 8" Silicon-Carbide Wafering
Mueller, Philipp	200mm Silicon Carbide Substrate Maturity Landscape
Mulpuri, Vamsi	Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
Muoio, Annamaria	Stress fields distribution and simulation in 3C-SiC (111) resonators
Murakami, Masataka	Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope
Murata, Koichi	Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial layers
Murayama, Kenta	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation
Murayama, Kenta	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Murphy, Aled	Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Murphy, John D.	Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Musya, Michimasa	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Muth, John	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Myers-Ward, Rachael	Basal Plane Dislocation Mitigation via Annealing and Growth Interrupts
Myers-Ward, Rachael	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
Myers-Ward, Rachael	Investigation of Dry Transfer of Epitaxial Graphene from SiC(0001)
Mysore, Madhu Lakshman	Investigation of overcurrent turn-off robustness of 1200 V SiC MOSFETs
Mützenich, Dirk	TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal growth
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N, L	Late news Late news
Na, Moonkyong	Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Nagasaka, Tatsuhiro	Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope
Nagasawa, Hiroyuki	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Nagel, Michel	Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs Unveiling border trap energetics in a SiO2-SiC system using capacitance based optical excitation spectroscopy Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors Influence of Threshold Voltage Mismatch on Switching Behavior of Parallel SiC Power MOSFETs
Nah, Hyunchul	TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
Nakajima, Yuta	The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal defects The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates
Nakano, Yuki	Impact of transition from full- to semi-superjunction structure on the performance limit of 4H-SiC devices
Nakanuma, Takato	Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing
Nakanuma, Takato	Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
Nakayama, Koji	Fabrication of the planer SiC gate-all-around JFET with channel dose modulation High Current Pulse Power Operation of 12 kV SiC Thyristors
Nania, Chiara	Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications
Narita, Shunki	Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Narita, Syunki	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET
Naruoka, Hideki	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process
Nas, Ismail	Improved thermal uniformity and power efficiency of graphite heating devices coated with TaC
Natzke, Philipp	Analysis of Silicon Vacancy Configurations and their Identification
Nelhiebel, Michael	Using in-situ nanoprobing in the scanning electron microscope to visualize the local potential on a biased SiC p-n junction
Nemoto, Norio	Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Neudeck, Philip	Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
Newton, Andrew	Dependence of epi defects on surface preparation by plasma techniques. Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Annealing 4H-SiC Trenches for Superjunction Technology
Nguyen, Xuan Sang	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Nicolosi, Dario	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Nicotra, Giuseppe	Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Niewelt, Tim	Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Nishiwaki, Tsuyoshi	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET
Nishiya, Yusuke	Carbon-related interface defects in p-channel 4H-SiC MOSFETs
Niskanen, Kimmo	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Nistor, Iulian	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench
Nittala, Pavani Vamsi Krishna	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Niwa, Hiroki	Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Nobs, Martin	Streamlining SiC Boule Fabrication - Optimized Wafer Ready Material
Nouketcha, Franklin	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Nufer, Stefan	200mm Silicon Carbide Substrate Maturity Landscape
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O'Loughlin, Michael	Silicon Carbide Epitaxial Growth Performance on 350um and 500um Thick 200mm Substrates
Oberdieck, Karl	Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates
Obermüller, Thomas	Integrated Approach to SiC Crystal Growth: Multiphysics Modeling and Chemistry Assessment in PVT Furnaces Automatic etch pit detection and characterization in KOH etch images of 4H-SiC using deep learning Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization ML-based Surrogate Model for Temperature Prediction and Efficient Parameter Calibration of PVT Simulations
Odekirk, Bruce	Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards
Ogawa, Keigo	Clustering tendencies of C atoms in SiO2 matrix with different O-containing conditions: molecular dynamics study with a universal neural network potential
Oh, Chanhyoung	Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved photoluminescence Observation of typical triangular Frank-type stacking faults in 4H-SiC epitaxial layer Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Oh, Jang Seok	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Oh, Jong-Min	Performance Enhancement of Cu2O/SiC Heterostructured Diodes Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures
Ohira, Kentaro	Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of 4H-SiC wafers
Ohshima, Takeshi	Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla sensitivities Simultaneous magnetic field and temperature sensing in SiC devices SiC CMOS Active Pixel Sensors with Embedded UV Photodiode Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Ohtani, Noboru	Highly spatially resolved photoluminescence characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals Kinematical parameters determining the nitrogen doping uniformity during physical vapor transport growth of 4H-SiC crystals Partial dislocation-induced surface irregularities observed on 4H-SiC homoepitaxial layers Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Ohuchi, Yuki	Molecular Dynamics Simulation Approach to H2 Etching Process on SiC
Okada, Yohei	A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors
Okamoto, Dai	Physically Based Mobility Model for SiC MOSFETs in TCAD
Okamoto, Mitsuo	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces Physically Based Mobility Model for SiC MOSFETs in TCAD Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET
Okamoto, Mitsuo	Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
Okamoto, Takeshi	Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process Informatics
Okino, Hiroyuki	Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC MOSFETs
Oliver, Jesús	Fast high current sensing SMD resistor network layout for low inductance insertion
Onishi, Kentaro	Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
Ono, Tomoya	DFT analysis on the electronic structure of 4H-SiC/SiO2 after NO annealing
Onogi, Atsushi	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET
Onozawa, Yuichi	Impact of electron irradiation on SiC power MOSFET performance
Oozono, Kunihide	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
Opprecht, Mathieu	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC
Ortiz Gonzalez, Jose	Prospects and Challenges for SiC Power Devices in MMC-VSC Applications
Oterdoom, Jeppe	Rapid thermal anneal with conductive heating for SiC wafers processing
Otsuka, Takeshi	High Spatial Resolution Analysis of Dislocations in 4H-SiC Using Low Accelerating Voltage Scanning Electron Microscope (SEM)-Cathodoluminescence (CL)
Owen, Michael	Spectral Investigation of Various Stacking Faults After Epitaxial Growth of 180m Thick Layer on 4H-SiC substrates Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer
Oyama, Rinku	Polarization control of SiO2/SiC interfacial single-photon sources by oxygen pressure during thermal oxidation
Ozalis, Muhammad	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC
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Pages, Xavier	Rapid thermal anneal with conductive heating for SiC wafers processing
Paik, Seoyoung	Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide
Palit, Pratim	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Palmer, Jacob	Submicron Diamond Slurry for Polishing Silicon Carbide Wafers
Palmieri, Andrea	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Panasci, Salvatore Ethan	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification Effects of sulfurization on the properties of 4H-SiC Schottky contacts
Park, Chang-Jun	Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Park, Changjoon	Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Park, Chulhwan	Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures
Park, Jae-Hyeon	Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth
Park, Jae-Hyung	A simplified method for extracting contact resistivity using the circular transmission line model
Park, Jaehoon	Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
Park, Jeongeun	Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide
Park, Jong-Hwi	Optimization of heat transfer design for high quality 4H-SiC ingot growth Process gas control for growth of high-resistant HPSI-SiC crystal High-quality SiC crystal growth by the control of cooldown rate at cooling stage
Park, Jucheol	Abnormal carrot defect and its buried prismatic stacking fault structure in 4H-SiC epitaxial layer
Park, Mi Seon	Filling-design effect of powder source in the crucible on SiC single-crystal growth
Park, Sanghong	Vth behavior by different barrier metals at positive bias HTGB & negative bias HTGBx
Park, Se-Rim	Influence of Deposition Techniques on the Electrical properties and Deep level Defect of Ga2O3/SiC heterojunction diode Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures
Park, Seung-Hyun	Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes
Park, Sumin	Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking capability A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Park, Yeongeun	A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Park, Young Jae	Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Parmar, Priyank	High-temperature adhesive bonding of 4H-SiC substrates
Pascu, Razvan	ITO/4H-SiC Schottky contacts for UV applications A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching Performances
Pasquali, Gabriele	Heavy ions radiation damage on silicon and silicon carbide detectors
Pavan, Vudumula Reddy	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC
Pavlekovic, Markus	Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization
Pavlidis, Spyridon	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Pearl, Haim	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Pei, Li	Towards identification of single photon emitters and electro-optical characterization of defects at the 4H-SiC/a-SiO2 interface
Peng, Yan	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Pennachio, Daniel	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
Pennachio, Daniel	Investigation of Dry Transfer of Epitaxial Graphene from SiC(0001)
Perazzi, Marco	DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation
Perera, Kushani	Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Perros, Alexander	ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET
Petachia Halely, Shunit	Characterization of SiC trenches using innovative 3D CDSEM Defects characterization and mitigation through the trench gate patterning process
Pezoldt, Joerg	3C-SiC on Si substrates by Si and C multilayers transformation
Pfeffer, Michael	Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor Homoepitaxy of 4H-SiC on a-plane substrates
Pfeiffer, Jan	Advanced diagnostics for rapid process development
Pfusterschmied, Georg	DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation High-temperature adhesive bonding of 4H-SiC substrates
Philipossian, Ara	Novel Catalyst-Referred Etching Technology for Preparing Epi-Ready Silicon Carbide Substrates
Philpott, Ryan	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals Threading Dislocation Behavior in the Facet Region of PVT-Grown 4H-SiC Crystals
Picun, Gonzalo	SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates
Piluso, Nicolo	Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Pitchiya, Aswin	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Planson, Dominique	Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Pobegen, Gregor	Using in-situ nanoprobing in the scanning electron microscope to visualize the local potential on a biased SiC p-n junction
Pocaterra, Marco	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Polisski, Gennadi	Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers. Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Pookpanratana, Sujitra	Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures
Portail, Marc	SiC for sensing in harsh environments: status, new efforts.
Powell, Michael J.	Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
Prasanna Kumar, Darshan Koorana	Investigation of overcurrent turn-off robustness of 1200 V SiC MOSFETs
Pristavu, Gheorghe	ITO/4H-SiC Schottky contacts for UV applications A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching Performances
Prokop, Norman	Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
Prokscha, Thomas	Characterization of the charge state of the silicon vacancy in 4H-SiC using low-energy muon spin spectroscopy
Puglisi, Alfio	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Purdy, Andrew	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
Purz, Torben Lennart	All-Optical Volumetric Imaging of Killer Defects in a SiC Epilayer
Pécz, Bela	Effects of sulfurization on the properties of 4H-SiC Schottky contacts
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Qi, Yunyi	Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Qian, Jiashu	Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs
Quek, Zhan Jiang	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC
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Rabinzohn, Patrick	ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET
Rabinzohn, Patrick	Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC
Race, Salvatore	Extrinsic Gate Reliability of SiC MOSFETs Temperature- and Current-dependent On-state Resistance of Planar-gate SiC Power MOSFETs Influence of Threshold Voltage Mismatch on Switching Behavior of Parallel SiC Power MOSFETs
Race, Salvatore	Dynamic vs. Quasi-stationary C-V Characterization of MOS Capacitors Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Rachor, Kevin	A New Era of 8" Silicon-Carbide Wafering
Raciti, Domenica	Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications
Radu, Ionut	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates
Raghothamachar, Balaji	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer X-ray Topography Characterization of SiC Crystals aided by Ray Tracing Simulations Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Rahimo, Munaf T.A.	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench
Rajabzadeh, Zahra	Atomistic defect modeling in SiC for crystal growth optimization
Ramadan, Zaher	Integrated Approach to SiC Crystal Growth: Multiphysics Modeling and Chemistry Assessment in PVT Furnaces Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization ML-based Surrogate Model for Temperature Prediction and Efficient Parameter Calibration of PVT Simulations
Ramakrishnan, Arjun	A Novel all-SiC Neural Interface: In-vivo Performance
Rana, Tawhid	A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process
Ranjan, Akhil	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Rascuna, Simone	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Rashid, Arman Ur	A Physics-Based SPICE Model for a SiC Vertical Power MOSFET
Rathi, Servin	Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Ravi, T.S.	Lateral epitaxial CVD growth of 4H-SiC
Reddy, Chilla Damodara	Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Reimann, Christian	Photoelastic measurement of residual stress in 4H-SiC substrates for evaluation of crystal growth and wafering process
Reimann, Dennis	Nitrogen Dopant Incorporation into epitaxial 4H-SiC: Influence of Chemical Vapor Deposition Growth Parameters and Materials
Reinsch, Benedikt	200mm Silicon Carbide Substrate Maturity Landscape
Reiprich, Johannes	3C-SiC on Si substrates by Si and C multilayers transformation
Renz, Arne Benjamin	Superjunction implementations within a 4H-SiC double trench MOSFET structure Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device On the Characterization of 4H-SiC PiN and JFETs for their USE in High-Voltage Bidirectional Power Devices Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Annealing 4H-SiC Trenches for Superjunction Technology Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Rho, Kongshik	Controlled domain in 3C-SiC epitaxial growth on off-oriented 4H-SiC substrate for water splitting
Riccio, Michele	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations
Riegler, Andreas	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Rieutord, François	High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates
Riva, Carlo	New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Roccaforte, Fabrizio	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification Effects of sulfurization on the properties of 4H-SiC Schottky contacts Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Rodgers, Benjamin	Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards
Romaner, Lorenz	Integrated Approach to SiC Crystal Growth: Multiphysics Modeling and Chemistry Assessment in PVT Furnaces Automatic etch pit detection and characterization in KOH etch images of 4H-SiC using deep learning Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization Atomistic defect modeling in SiC for crystal growth optimization ML-based Surrogate Model for Temperature Prediction and Efficient Parameter Calibration of PVT Simulations
Romanitan, Cosmin	ITO/4H-SiC Schottky contacts for UV applications
Rommel, Mathias	On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide Formation of structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope Determining Compensation of Implanted Aluminum Dopants in 4H-SiC by Simultaneous Fitting of Charge Carrier Concentration and Mobility
Rossitto, Antonio	Silicon Carbide wafer edge, bevel and apex defect characterization with inline SEMVision® G3MAXFIB
Rouchier, Severin	Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Rueb, Michael	Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Ruffino, Francesco	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Rusch, Oleg	Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope
Russo, Alfio	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering
Russo, Andrea	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Ryu, Sei-Hyung	Characterization of interface trap and mobility degradation in SiC MOS devices using gated Hall measurements Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs A simplified method for extracting contact resistivity using the circular transmission line model A Physics-Based SPICE Model for a SiC Vertical Power MOSFET
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Saddow, Stephen	A Novel all-SiC Neural Interface: In-vivo Performance
Saeki, Hidenori	Molecular Dynamics Simulation Approach to H2 Etching Process on SiC
Safko, Mary	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals
Saggio, Mario	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Saito, Jun	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Sakakima, Hiroki	Clustering tendencies of C atoms in SiO2 matrix with different O-containing conditions: molecular dynamics study with a universal neural network potential Molecular Dynamics Simulation Approach to H2 Etching Process on SiC
Sakane, Hitoshi	Proton implantation into substrate and stacking faults in epitaxial layers Hydrogen and point defect introduction into 4H-SiC by plasma treatment Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation Role of Point Defects in Suppressing Stacking Fault Expansion through Helium and Proton Implantation in SiC Epitaxial Layer
Sako, Hideki	Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of 4H-SiC wafers
Sakuraba, Masao	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Sampath, Anand	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Samperi, Orazio	Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type 4H-SiC Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Sampurno, Yasa	Novel Catalyst-Referred Etching Technology for Preparing Epi-Ready Silicon Carbide Substrates
Sanchez, Edward	A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process
Sapienza, Sergio	Stress fields distribution and simulation in 3C-SiC (111) resonators
Satapathy, Yashas	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Sato, Shigeo	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Sato, Shin-Ichiro	Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla sensitivities
Savtchouk, Alexandre	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Sazawa, Hiroyuki	An Ohmic Contact for SiC-based P-channel HFET
Scalisi, Melissa Lucia	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Scharnholz, Sigo	Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Scheiman, David	Spectral Investigation of Various Stacking Faults After Epitaxial Growth of 180m Thick Layer on 4H-SiC substrates Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer Basal Plane Dislocation Mitigation via Annealing and Growth Interrupts
Scheler, Theresa	3C-SiC on Si substrates by Si and C multilayers transformation
Schlecht, Maria	Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification
Schletz, Andreas	Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices
Schletz, Andreas	Challenges of Transient Virtual Junction Temperature Measurement of SiC MOSFETs by VSD(T)-Method for Power Cycling – A Study on Impact Factors
Schlichting, Holger	On the Relationship of Processing Parameters and Epitaxial Defects to Extrinsic Failure in SiC Gate Oxide Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime
Schmid, Alexander	ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET
Schmid, Patrick	TCAD Model for Thermal Oxidation of 4H-SiC Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Schmid, Ulrich	DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation High-temperature adhesive bonding of 4H-SiC substrates
Scholten, Dick	Three level stress pulses to investigate gate switching instability
Scholten, Dick	Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC
Scholze, Andreas	TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
Schoser, Siegmar	200mm Silicon Carbide Substrate Maturity Landscape
Schrader, Alexander	Nitrogen Dopant Incorporation into epitaxial 4H-SiC: Influence of Chemical Vapor Deposition Growth Parameters and Materials
Schrayer, Bret	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
Schrimpf, Ronald	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Schroeder, Uwe	Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on SiC
Schuck-Buehner, Kevin	TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal growth
Schulze, Joerg	Thick Semi Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Schulze, Jörg	Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC
Schunemann, Pete	Characterization of Void Defects in PVT-Grown 4H-SiC Crystals Threading Dislocation Behavior in the Facet Region of PVT-Grown 4H-SiC Crystals
Schuster, Jonathan	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Schustereder, Werner	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Schwarberg, Jannik	Homoepitaxy of 4H-SiC on a-plane substrates
Schwarzenbach, Walter	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Schüttauf, Jan-Willem	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs
Sciuto, Antonella	Analysis of mechanical properties of 4H-SiC 6 inch wafers by nanoindentation test
Scognamillo, Ciro	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench
Scuderi, Viviana	Stress fields distribution and simulation in 3C-SiC (111) resonators
Sdrulla, Dumitru-Gheorge	A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching Performances
Sekely, Ben	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Sengupta, Arijit	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Senzaki, Junji	Life prediction of SiC-MOSFET by accelerated test using anode hole injection correction Partial dislocation-induced surface irregularities observed on 4H-SiC homoepitaxial layers
Seo, Hanseok	Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking capability
Seo, Jae-Hwa	Temperature-Dependent Hole Scattering in p-Channel 4H-SiC MOSFETs with Different Channel Lengths Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs) Effect of channel width and length on the mobility of 4H-SiC lateral MOSFETs using ion-implanted n- and p-base regions
Seo, Jin Ho	Lateral epitaxial CVD growth of 4H-SiC
Seo, Keisuke	Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light Observation
Seok, Ogyun	Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking capability A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Severino, Andrea	Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering New insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Sezaki, Hiroshi	Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃ Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices
Shafizadeh, Danial	Evolution of photoluminescence and optically detected magnetic resonance spectra of divacancy defects in 4H-SiC from cryogenic to room temperatures
Shah, Vishal	Superjunction implementations within a 4H-SiC double trench MOSFET structure Dependence of epi defects on surface preparation by plasma techniques. Cost-Effective Design and Optimization of a 3300-V Semi Superjunction 4H SiC MOSFET Device Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Annealing 4H-SiC Trenches for Superjunction Technology Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Shahidi, Sam	DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing
Shekerov, Ivan	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
Shekhawat, Deepshikha	3C-SiC on Si substrates by Si and C multilayers transformation
Shen, Chengjun	Static Analysis of High Voltage Vertical Silicon & SiC NPN BJTs
Shen, Shih-Chiang	Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs
Shi, Limeng	Optimization of Gate Oxide Screening Technology for Commercial SiC discrete MOSFETs and Power Modules
Shi, Limeng	Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs
Shikama, Naoki	Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Shima, Akio	High Current Pulse Power Operation of 12 kV SiC Thyristors Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC MOSFETs
Shimabukuro, Bunta	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs Carbon-related interface defects in p-channel 4H-SiC MOSFETs
Shimbori, Atsushi	Analysis of Ohmic contacts simultaneously formed on both n-type and p-type 4H-SiC
Shimoda, Daiki	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Shin, Hoon-Kyu	Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Shin, Weon-Ho	Performance Enhancement of Cu2O/SiC Heterostructured Diodes Investigation of BaTiO3/4H-SiC metal-ferroelectric-semiconductor structures
Shin, Yun-Ji	Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth
Shin, Yunji	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth
Shindou, Hiroyuki	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Shingo, Ryosuke	Threshold voltage drift mechanism in SiC MOSFETs by photon-assisted electron injection under bipolar AC gate stress
Shiono, Tsubasa	Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial layers
Shiraga, Hiroaki	Impact of transition from full- to semi-superjunction structure on the performance limit of 4H-SiC devices
Shrestha, Nishan	Near Field Spectroscopy of Silicon Carbide Nanosheets for Novel Application Unleashing the Potential of Low Dimensional Silicon Carbide
Shrestha, Ramesh	DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing
Shustrov, Yury	Analysis of SiO2 Mask Shape Effect on SiC Trench Deformation in Biased SF6/O2 Inductively Coupled Plasma
Siebenkotten, Dario	Nanoscale infrared polytype layer analysis and charge carrier profiling
Simpson, Gavin	DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing
Singh, Navab	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Singh, Pankaj	High Removal Rate Silicon Carbide (SiC) Slurry
Singh, Rajiv	High Removal Rate Silicon Carbide (SiC) Slurry
Sink, Joseph	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Smirnov, Andrey	Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC Epitaxy Analysis of SiO2 Mask Shape Effect on SiC Trench Deformation in Biased SF6/O2 Inductively Coupled Plasma
Smith, Jeremy	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Smoliner, Jürgen	Using in-situ nanoprobing in the scanning electron microscope to visualize the local potential on a biased SiC p-n junction
Solodovnyk, Artur	Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance Measurements of Deep Level Defects in GaN Schottky Diodes
Solomon, David	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices Characterization of SiC trenches using innovative 3D CDSEM
Sometani, Mitsuru	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs Carbon-related interface defects in p-channel 4H-SiC MOSFETs Anisotropy variation in MOS channel mobility among 4H-SiC nonpolar and semipolar faces High Current Pulse Power Operation of 12 kV SiC Thyristors Physically Based Mobility Model for SiC MOSFETs in TCAD
Sometani, Mitsuru	Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
Son, Dong Ick	Examining Nitrogen Doping Effects on MOCVD-Epitaxially Grown SiC Films on 4H-SiC Substrates
Son, Nguyen T.	Evolution of photoluminescence and optically detected magnetic resonance spectra of divacancy defects in 4H-SiC from cryogenic to room temperatures
Song, Gyeoung Jun	Filling-design effect of powder source in the crucible on SiC single-crystal growth
Song, Jianan	A preliminary investigation of defects in GaN pn junction diodes using electrically detected magnetic resonance and near zero field magnetoresistance spectroscopy
Song, Wendong	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Sonneville, Camille	Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Soto, Jake	Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards
Soukhojak, Andrey	Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Soykal, Öney O.	Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide
Spampinato, Valentina	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Speer, Kevin	Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect Standards
Spry, David	Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla sensitivities Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
Sreenivasan, Raghav	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Stahlbush, Robert	Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial layer Using Convolutional Neural Network to Map Defects in SiC
Stahlbush, Robert	Spectral Investigation of Various Stacking Faults After Epitaxial Growth of 180m Thick Layer on 4H-SiC substrates
Steidl, Timo	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Stein, Shane R.	Characterization of interface trap and mobility degradation in SiC MOS devices using gated Hall measurements Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
Steiner, Johannes	Improvement of the yield during crystal growth of SiC by PVT by proper selection and design of hot zone isolation components
Steller, Nils	Nitrogen Dopant Incorporation into epitaxial 4H-SiC: Influence of Chemical Vapor Deposition Growth Parameters and Materials Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Steltenpool, Mark	Rapid thermal anneal with conductive heating for SiC wafers processing
Sternberg, Andrew	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Steski, Dannie	Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Stokeley, Katarzyna	A study of epitaxial growth on 4H-SiC substrates treated by plasma polish dry etch (PPDE) process Dependence of epi defects on surface preparation by plasma techniques. Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Annealing 4H-SiC Trenches for Superjunction Technology
Strüber, Sven	Improvement of the yield during crystal growth of SiC by PVT by proper selection and design of hot zone isolation components
Stuermer, Peter A.	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Sudhahar, Dwarakesh	3C-SiC on Si substrates by Si and C multilayers transformation
Suematsu, Tomoka	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Suemitsu, Maki	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Sugawara, Katsutoshi	Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Sugiyama, Kosei	DFT analysis on the electronic structure of 4H-SiC/SiO2 after NO annealing
Sulyok, Attila	Effects of sulfurization on the properties of 4H-SiC Schottky contacts
Sun, Ju-Hyeong	Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth Rapid Growth of Bulk SiC crystals via Physical Vapor Transport Method : Challenges to Improvement in the crystal qualities under rapid growth
Sundaram, Arvind	Study of SiC trench etching characteristics for different crystal planes
Sundaresan, Siddarth	Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
Sung, Woongje	Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Sung, Woongje	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Suzuki, Koki	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Suzuki, Tatsutoshi	Novel Catalyst-Referred Etching Technology for Preparing Epi-Ready Silicon Carbide Substrates
Söderlund, Mikko	ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET
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Tachiki, Keita	Mobility enhancement in SiC n- and p-channel MOSFETs
Tahara, Daisuke	Study on effect of interfacial pore between seed and graphite holder for physical vapor transport growth of 4H-SiC crystal
Tahara, Kosuke	Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing
Tahara, Kosuke	Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
Takagi, Shigeaki	Effect of intervening layer insertion on Φb reduction in TiN Schottky
Takahara, Mariko	The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates
Takahashi, Misa	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Takahashi, Satoru	Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Takano, Kazumi	Numerical analysis of correlation between UV irradiation and current injection on bipolar degradation in PiN diodes How to simulate bipolar degradation by UV irradiation with high accuracy Study on conversion of survived BPDs in epitaxial layer to TEDs
Takeda, Yuzo	Highly spatially resolved photoluminescence characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals
Takeyama, Akinori	SiC CMOS Active Pixel Sensors with Embedded UV Photodiode Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Taki, Masato	Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process Informatics
Talbi, Abdelkrim	SiC for sensing in harsh environments: status, new efforts.
Tanabe, Kazuyoshi	Highly spatially resolved photoluminescence characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals
Tanaka, Hajime	Monte Carlo analyses on impact ionization coefficients in 4H-SiC
Tanaka, Katsuhisa	Effect of intervening layer insertion on Φb reduction in TiN Schottky
Tanaka, Takanori	Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET Dynamics of stacking fault expansion in H+ implanted SiC-MOSFETs investigated by photoluminescence spectroscopy Investigation on effect of electrical characteristics of proton implanted 4H-SiC MOSFET
Tanaka, Tomoaki	Simultaneous magnetic field and temperature sensing in SiC devices
Tanaka, Yasunori	An Ohmic Contact for SiC-based P-channel HFET Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Fabrication of the planer SiC gate-all-around JFET with channel dose modulation High Current Pulse Power Operation of 12 kV SiC Thyristors An approach on the void-free refill of 4H-SiC trench by CVD SiC CMOS Active Pixel Sensors with Embedded UV Photodiode
Tang, Gongyue	Development and Demonstration of a High Temperature and High Performance Dual Side Cooling SiC Power Module for Automotive Application
Tanigawa, Kazuma	SiC CMOS Active Pixel Sensors with Embedded UV Photodiode
Tanner, Philip	SiC Schottky-barrier diode without ion-implanted P-type regions
Tanno, Takenori	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Taucher, Lorenz	Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization ML-based Surrogate Model for Temperature Prediction and Efficient Parameter Calibration of PVT Simulations
Tawara, Takeshi	Improvement of Single Event Leakage Current Tolerance in 4H-SiC Trench MOSFET Demonstration of Structural Effects on SEB Tolerance in Trench Gate SiC-MOSFETs under Heavy-Ion Irradiation
Teker, Kasif	Influence of Gold Nanoparticle Distribution on the Performance of Self-powered Silicon Carbide Ultraviolet Photodetector
Teker, Tarik U.	Influence of Gold Nanoparticle Distribution on the Performance of Self-powered Silicon Carbide Ultraviolet Photodetector
Terracciano, Vincenzo	Out-of-SOA performance of 3.3 kV SiC MOSFETs: Comparison between Planar and Quasi-Planar Trench Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations
Thum, Michael	Formation of structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing
Thuries, Louis	Ohmic contact technology using laser annealing by alloying Ni on 4H-SiC Formation of highly doped and defect-free p-type junctions in SiC by using high temperature implants and UV-Laser Annealing
Thörnberg, Jimmy	Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers.
Tochizaki, Wataru	Kinematical parameters determining the nitrogen doping uniformity during physical vapor transport growth of 4H-SiC crystals
Toda, Kohei	The application of dynamical thermal annealing processes after mechanical slicing as an integrated contactless SiC wafering method to control crystal defects Development of a novel warpage control method for epi-ready 4H-SiC wafers by depositing homoepitaxial layers on both Si- and C-faces Active planarization method from rough surface of 4º-off 4H-SiC (0001) controlled by step bunching and debunching mechanism using Dynamic AGE-ing® The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC substrates
Tok, Eng Soon	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Tomek, Creighton	Investigation on the CTE matching of graphite substrates and TaC coating
Tominaga, Takaaki	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface
Tomita, Hidemoto	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process
Torky, Mohamed	Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts
Toyama, Haruko	Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
Trempa, Matthias	TaC-based protective coating systems adapted on graphite materials with different thermal expansion for the use in SiC PVT crystal growth
Tsai, Chin-Ya	Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs
Tsuchida, Hidekazu	Formation mechanism of basal plane dislocations in 150 mm-diameter SiC wafers with thick epitaxial layers
Tsui, Bing-Yue	Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
Tsvetkov, Denis	Silicon Carbide Epitaxial Growth Performance on 350um and 500um Thick 200mm Substrates
Tudisco, Salvatore	Heavy ions radiation damage on silicon and silicon carbide detectors
Tuhser, Taohid	Investigation on the CTE matching of graphite substrates and TaC coating
Turner, Kelly	Controlling 4H-SiC Trench Refill Epitaxy for Superjunction Power Devices with Supersaturated Chlorinated Chemistry Annealing 4H-SiC Trenches for Superjunction Technology
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Uchida, Hidetsugu	Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates Advantages of backside metal contact resistance on 4H-SiC bonded substrates for power devices
Uchida, Tomoyuki	Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope
Uchimaru, Kazuo	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process
Udrea, Florin	The Silicon Carbide FinFET – a milestone concept in power electronics
Udvarhelyi, Péter	Towards identification of single photon emitters and electro-optical characterization of defects at the 4H-SiC/a-SiO2 interface
Uehigashi, Hideyuki	Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process Informatics
Uematsu, Daisuke	Development of a 200 mm-Diameter 4H-SiC Crystal Using the HTCVD Method Enhanced by Process Informatics
Uemoto, Mitsuharu	DFT analysis on the electronic structure of 4H-SiC/SiO2 after NO annealing
Ujihara, Toru	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Ujihara, Tour	Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal Growth
Ul-Hassan, Jawad	Epitaxial growth of 280 μm thick 4H-SiC on 4°-off substrates for ultra-high-power devices Analysis of Silicon Vacancy Configurations and their Identification Lateral epitaxial CVD growth of 4H-SiC
Ulibarri, Agatha	Unveiling border trap energetics in a SiO2-SiC system using capacitance based optical excitation spectroscopy Thermal-oxidation and Ion-implantation-induced Strain in 4H-SiC
Ullmann, Rupert	Defect optimization by controlling etching, seeding and ramping on a planetary batch reactor
Umeda, Takahide	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs Carbon-related interface defects in p-channel 4H-SiC MOSFETs
Umesh, Chand	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Umezawa, Hitoshi	An Ohmic Contact for SiC-based P-channel HFET Fabrication of the planer SiC gate-all-around JFET with channel dose modulation
Urata, Yuki	A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors
Uschmann, Juergen	Three level stress pulses to investigate gate switching instability
Usureau, Elise	Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers
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Valecha, Rahul	Analysis of Ohmic contacts simultaneously formed on both n-type and p-type 4H-SiC
Vallejos Burgos, Fernando	Graphite an Enabler for Single Crystal SiC Growth
Van Cuong, Vuong	Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃ Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET
Van Der Linde, Simon	Rapid thermal anneal with conductive heating for SiC wafers processing
Vandevenne, Ilias	Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs Electrical detection of Magnetic Resonance on a Chip (EDMRoC): A low-cost and sensitive characterization tool for defects in SiC MOSFETs
Vanmil, Brenda	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Varghese, Binni	Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Vento, Fabiana	Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device applications
Vergne, Bertrand	Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Verma, Aditya	High Removal Rate Silicon Carbide (SiC) Slurry
Vines, Lasse	Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type 4H-SiC Channeling proton implantation for localized defect control in 4H-SiC: A combined SIMS/DLTS depth profiling study
Vinodth, Senthil	Optimization of SiC growth processes by using insights of inductive SiC inspection
Vivona, Marilena	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification Effects of sulfurization on the properties of 4H-SiC Schottky contacts Evolution of the electrical and microstructural properties of Mo/4H-SiC contact with the annealing temperature
Voo, Roth	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance
Voznyi, Andrii	ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC MOSFET
Voznyi, Andrii	Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC
Vrielinck, Henk	Signal inversion in charge pumping electrically-detected magnetic resonance of 4H-SiC MOSFETs
Vudumula, Pavan	Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Vuillermet, Enora	Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers
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Wachowiak, Andre	Impact of interfacial SiO2 layer thickness on the electrical performance of SiO2/High-k stacks on SiC
Wai, Leong Ching	Development and Demonstration of a High Temperature and High Performance Dual Side Cooling SiC Power Module for Automotive Application
Wakamiya, Keiichiro	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Walsh, Nathaniel	Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
Wang, Chaohao	Investigation of overcurrent turn-off robustness of 1200 V SiC MOSFETs
Wang, Ming-Han	Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
Wang, Rong	Doping dependent electronic and kinetic properties of dislocations in 4H silicon carbide
Wang, Tong	Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform
Wang, Yaohao	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Wang, Zhenkun	Unclamped Inductive Switching in SiC MOSFETs and Diodes: Implications for Standards, Testing, and Screening
Watahiki, Tatsuro	Investigation on Bipolar Degradation caused by Micropipe in 3.3kV SiC-MOSFET
Watanabe, Heiji	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs Carbon-related interface defects in p-channel 4H-SiC MOSFETs
Watanabe, Heiji	Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing Investigation of oxygen-related defects in 4H-SiC from ab initio calculations
Watanabe, Heiji	Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
Watanabe, Heiji	Impurity-vacancy complexes in 4H-SiC: stability and properties
Watanabe, Heiji	Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001)
Watanabe, Heiji	Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
Watanabe, Naoki	High Current Pulse Power Operation of 12 kV SiC Thyristors Effects of Proton Irradiation Before Device Fabrication on the Switching Characteristics of 3.3kV SiC MOSFETs
Watanabe, Ohga	Proton implantation into substrate and stacking faults in epitaxial layers
Watanabe, Yukimune	Formation of alternating epilayers of 4H-SiC and 3C-SiC by simultaneous lateral epitaxy
Weber, Heiko B.	Monolithic fabrication of 4H-SiC micromechanical devices by electrochemical etching and characterization of vibrational modes Investigation of the Stark Effect of TS and E color centers on a-face 4H-SiC Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification
Wedl, Günter	High-temperature adhesive bonding of 4H-SiC substrates
Wehrle, Moritz	Engineered bilayer high-κ gate dielectric stacks for ideal operation of high-performance SiC power MOSFETs Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar MOSFETs
Weijie, Wang	Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
Weitz, Tobias	Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky rectification
Wellisz, Antoni	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Wellmann, Peter	Improvement of the yield during crystal growth of SiC by PVT by proper selection and design of hot zone isolation components
White, Marvin H.	Investigation of Interface Traps Distribution using a Temperature Dependent Threshold Voltage Shift Method in Commercial 4H-SiC Power MOSFETs
White, Samuel	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
White, Samuel	Basal Plane Dislocation Mitigation via Annealing and Growth Interrupts
Wicker, Christina	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Widiez, Julie	Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance
Wilson, Bradley	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
Wilson, Marshall	Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies Coherency between epitaxial defectivity, surface voltage, photoluminescence mapping and electrical wafer sorting for 200mm SiC wafers. Non-contact Full wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
Wimmer, Paul	Homoepitaxy of 4H-SiC on a-plane substrates Photoelastic measurement of residual stress in 4H-SiC substrates for evaluation of crystal growth and wafering process
Wirths, Stephan	Evaluation of switching performances and short circuit capability of a 1.2 kV SiC GAA MOSFET through TCAD simulations
Witulski, Arthur F	Analysis of Latent Gate Oxide Damage in Heavy-Ion Irradiated High-Voltage SiC Power MOSFETs
Wraback, Michael	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Wrachtrup, Joerg	Selective Initialization Mechanism of Silicon Vacancy Spin Qubits with spin S=3/2 in Silicon Carbide
Wrachtrup, Jörg	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Wu, Ruei-Ci	Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs
Wörnle, Raphael	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
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Xie, Jiawei	BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance
Xie, Xuejian	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Xiong, Xixi	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Xu, Xiangang	Study on growth of 8inch SiC substrate with ultra-low dislocation density
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Yadav, Anup	Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Yadav, Manoj Kumar	High-temperature adhesive bonding of 4H-SiC substrates
Yamamoto, Fumitoshi	Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film Along the Trench Surface
Yamamoto, Masayuki	Fabrication of the planer SiC gate-all-around JFET with channel dose modulation
Yamasue, Kohei	4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process
Yamauchi, Kazuto	Novel Catalyst-Referred Etching Technology for Preparing Epi-Ready Silicon Carbide Substrates
Yamazaki, Yuichi	Simultaneous magnetic field and temperature sensing in SiC devices
Yang, Dae	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Yang, Jiao	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Yang, Tao	Progress Towards 4H-SiC Low Gain Avalanche Detectors (LGADs)
Yang, Tingqiang	DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation
Yang, Woong-Suk	Influence of Oxidation Time and Method on 4H-SiC MOS Capacitor Characteristics
Yang, Xianglong	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Yano, Hiroshi	Spin-dependent-charge-pumping spectroscopy on p-channel 4H-SiC MOSFETs Threshold voltage drift mechanism in SiC MOSFETs by photon-assisted electron injection under bipolar AC gate stress Impact of electron irradiation on SiC power MOSFET performance
Yeats, Andrew	Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified 4H-SiC
Yen, Cheng-Tyng	Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method
Yen, Chih-Hung	Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion MOSFETs
Yeo, Hannan	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Study of SiC trench etching characteristics for different crystal planes Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance
Yeo, Yee Chia	Inline Methodology for Rapid Characterization of Carrier Mobility in SiC Drift Layer and Wafer Mapping of 200 mm 4H-SiC Wafers BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to P-type 4H-SiC Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET Study of in-grown micropipes in 200 mm 4H-SiC (0001) epitaxial substrate Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates Indium-Tin-Oxide (ITO) Interlayer-assisted Ohmic Contacts on N-type 4H-SiC with Low Specific Contact Resistance Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer growth
Yiang, Yifan	On the Characterization of 4H-SiC PiN and JFETs for their USE in High-Voltage Bidirectional Power Devices
Yildirim, Mustafa Akif	Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing Influence of Gold Nanoparticle Distribution on the Performance of Self-powered Silicon Carbide Ultraviolet Photodetector
Yokojama, Koji	Application of photoexcited muon spin spectroscopy to study excess charge carrier lifetimes in 4H-SiC epilayers
Yonaha, Takemi	8-inch thick SiC crystals grown by solution growth method combined with digital twin
Yonezawa, Yoshiyuki	Simulation of High-energy Channeling Implantation in 4H-SiC High Current Pulse Power Operation of 12 kV SiC Thyristors
Yoo, Jinkyoung	Unleashing the Potential of Low Dimensional Silicon Carbide
Yoon, Hyowon	Fabrication of 3.3 kV SiC PiN diodes with step-ring-assisted junction termination extension for a reliable blocking capability A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics Robust switching performance of 1.2 kV SiC MOSFETs using internal SBDs integration
Yoon, Jiyeong	The investigation of effective thermal oxidation to SiC MOSFET gate oxide quality improvement
Yoon, Young Jun	Displacement Damage Effect of Proton Irradiation on Vertical SiC and β-Ga2O3 based Schottky Barrier Diodes (SBDs)
Yoshihashi, Hideo	Effect of intervening layer insertion on Φb reduction in TiN Schottky
Yoshikawa, Jun	A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors
Yoshikawa, Masanobu	Trench shape dependence of stress distribution in 4H-SiC trench MOSFET test structures by Scanning Near-field Optical Raman Microscope
Young, Robert	Optimizing Short Channel Designs in 1700 V 4H-SiC VDMOSFET
Yu, Chung-Ju	Instability in Thermal Impedance Characterization of SiC MOSFETs: The Impact of Reverse Conducting Channel Leakage on Body Diode Temperature-Sensitive Parameters Method
Yu, Guojian	Study on growth of 8inch SiC substrate with ultra-low dislocation density
Yuan, Zimo	Coupling TCAD with Junction DLTS to extract capture properties of minority carrier traps: the Shallow Boron center in N-type 4H-SiC Epitaxial growth of 280 μm thick 4H-SiC on 4°-off substrates for ultra-high-power devices
Yurash, Brett	Integrated Photonic with Divacancy Defects in 4H-SiC-on-Insulator Platform
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Zacks, Jacob	A simplified method for extracting contact resistivity using the circular transmission line model
Zechner, Christoph	TCAD Model for Thermal Oxidation of 4H-SiC
Zelazko, Jaroslaw	Closely spaced midgap levels in 4H-SiC bandgap revealed by Laplace-transform photoinduced transient Spectroscopy
Zeledon, Cyrus	Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Zellner, Christopher	DFT calculations on the surface termination of 4H-SiC {10-10} and {11-20} during photoelectrochemical pore formation High-temperature adhesive bonding of 4H-SiC substrates
Zeng, Hongyu	Carbon-related interface defects in p-channel 4H-SiC MOSFETs
Zetterling, Carl-Mikael	A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
Zhang, Hua	Device Performance and Reliability of SiC CMOS up to 400 ̊C
Zhang, Qintao	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Zhang, Shengtao	Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization
Zhao, Dawei	Bipolar degradation driven by junction-temperature controlled Power Cycling Milliseconds (PCmsec) in Silicon Carbide Power Devices
Zhao, Lili	Crystal Quality Evaluation of 6-inch and 8-inch SiC Growth in Resistive Furnaces: Defect Mapping and Characterization
Zheng, Yi	Co-optimization of APF-based advanced mask deposition, etch and metrology processing for high-performance SiC devices
Zhou, Huiqin	Numerical Simulation Study on Different Scales to Suppress Solvent Inclusion Defects in SiC Solution Crystal Growth
Zhu, Mike	SiC Avalanche Photodiodes—Crystal Orientation and Spatial Uniformity
Ziegler, Johannes	Investigation of Poly-Si gated, Al2O3-based high-k Dielectrics on 4H-SiC
Zielinski, Marcin	C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates
Zignale, Marco	Understanding of the impact of Carrot-like defects embedded in the 4H-SiC power MOSFET structure: a route for an effective device qualification
Zimina, Daria	Modeling Study of the Effect of Process Parameters and Wall Coatings on Doping Uniformity in SiC Epitaxy Analysis of SiO2 Mask Shape Effect on SiC Trench Deformation in Biased SF6/O2 Inductively Coupled Plasma
Zmoelnig, Christian	Towards a scalable, integrated real-world quantum magnetometer based on proprietary 4H silicon carbide technology
Zumbo, Luca	Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions
Zuvic, Milan	Design parameters impact on electrical characteristics of 4H-SiC thyristors with etched junction termination extension