Program for Monday, September 30th: Talk View

PROGRAM FOR MONDAY, SEPTEMBER 30TH: TALK VIEW

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View: with abstracts session overview

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

19:00

19:30

20:00

20:30

09:00-11:00 Opening Plenaries

10:50-11:00

Enhancing Reliability in 1.2kV 4H-SiC Trench MOSFETs: A Comprehensive Study

Jake Choi, Kwangwon Lee, Howard Kim

Influence of the Temperature Gradient on the Defect Formation in the Initial Stage of PVT Growth

Sun, Harada, Choi, Kyun, Hong, Jeong, Bae, Shin

SiC Plasma Dicing for Future High Yield Die Singulation

Ben Jones, Huma Ashraf, Jacob Mitchell, Owen James Guy, Alex Croot

Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate

Higashi et.al

Identification of Threading Mixed Dislocations Having a Large Edge Component Burgers Vector by Polarized Light

Harada, Kawase, Matsubara, Seo, Mizutani, Mizutani, Mizutani, Murayama

11:00-11:30 Break

11:30-12:00

Optically Pumped Solid State Magnetometers for Planetary and Space Science: Inching closer to single-digit nanotesla

H. Kraus, A. Gottscholl, C. Cochrane, D. Spry, S.-I. Sato, T. Ohshima

12:00-12:20

Dephasing Times and Magnetic Field Sensitivity of the Silicon Vacancy in Isotopically-Purified

White, Lekavicius, Purdy, Carter, Pennachio, Hajzus, Yeats, Myers-Ward

12:20-12:40

Simultaneous magnetic field and temperature sensing in SiC devices

Tomoaki Tanaka, Yuichi Yamazaki, Takeshi Ohshima

12:40-13:00

Towards identification of single photon emitters and electro-optical characterization of defects at the 4H-SiC/a-SiO2

Li Pei, Song Li, Péter Udvarhelyi, Bing Huang, Adam Gali

11:40-12:00

Heavy ions radiation damage on silicon and silicon carbide detectors

F. La Via, G. Pasquali, C. Ciampi, L. Calcagno, S. Tudisco

12:00-12:20

Influence of Gold Nanoparticle Distribution on the Performance of Self-powered Silicon Carbide Ultraviolet

Mustafa A. Yildirim, Tarik U. Teker, Kasif Teker

12:20-12:40

SiC CMOS Active Pixel Sensors with Embedded UV Photodiode

Tanigawa, Kuroki, Meguro, Takeyama, Oshima, Kojima, Tanaka

12:40-13:00

Exploring intrinsic high-frequency limitations of electronic devices: The end of the road of Schottky

H. Weber, M. Schlecht, T. Weitz, C. Heide, S. Malzer, M. Krieger, P. Hommelhoff

13:00-14:30 Lunch

14:30-15:00

Review for Resonac’s SiC Epiwafer Development

Hiroshi Kanazawa

15:00-15:20

Silicon Carbide Epitaxial Growth Performance on 350um and 500um Thick 200mm Substrates

Tom Kuhr, Ryan Liu, Denis Tsvetkov, Derrick Kamber, Michael O'Loughlin

15:20-15:40

Basal Plane Dislocation Mitigation via Annealing and Growth Interrupts

R. Myers-Ward, N. Mahadik, D. Scheiman, J. Hajzus, S. White

15:40-16:00

Defect density reduction in 4H-SiC (0001) epilayer via growth-interruption during buffer layer

Kumar et.al

14:30-15:00

The Silicon Carbide FinFET – a milestone concept in power electronics

Florin Udrea

15:00-15:20

ALD deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high performance SiC

Voznyi, Ivanova, Söderlund, Perros, Rabinzohn, Schmid, Beyer

15:20-15:40

Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency

Jang, Kim, Mudiyanselage, Sung, Lee, Lee, Kim, Kim

15:40-16:00

Investigation of threshold voltage stability under high gate voltage stress in High-K SiC planar

Pocaterra, Bolat, Ceccarelli, Alfieri, Race, Boksteen, Wehrle, Buitrago

16:00-16:15 Break

16:15-17:30

Process gas control for growth of high-resistant HPSI-SiC crystal

Lee, Kim, Park, Choi, Kim, Ku, Lee, Lee

A Novel Approach for the Volume Production of Wide-Bandgap Semiconductor

Ghassan Barbar

Evaluation of 4H SiC epitaxial CVD process on different 200 mm substrates for power device

C. Nania, D. Raciti, C. Calabretta, F. Vento, R. Anzalone, A. Severino

200mm n-type SiC Uniform Low BPD in Their Whole Crystal Technology

Ching Shan Lin, Wen-Ching Hsu

Advanced diagnostics for rapid process development

Slobodan Mitic, Jan Pfeiffer, Benedikt Kramm, Kevin Hess

Optimization of heat transfer design for high quality 4H-SiC ingot growth

Lee, Kim, Park, Choi, Kim, Ku, Kang, Lee

Study on growth of 8inch SiC substrate with ultra-low dislocation density

Y. Peng, X. Xiong, X. Yang, X. Xie, G. Hu, X. Chen, G. Yu, X. Hu, Y. Wang, X. Xu

Active planarization method from rough surface of 4º-off 4H-SiC (0001) controlled by step bunching and debunching mechanism using Dynamic

Kohei Toda, Kazuya Kiritani, Daichi Dojima, Tadaaki Kaneko

Challenges in Investigating UIS Material-Based Failures & Yield Prediction in Absence of Robust 4H-SiC Epitaxial Defect

J. Soto, B. Odekirk, S. Maximenko, B. Rodgers, M. Fisher, K. Speer

Low-temperature Photoluminescence characterization of 4H-SiC epilayers irradiated with H+ ions

Scalisi et.al

Minority carrier lifetime mapping of stacking faults on photoluminescence maps from 4H-SiC epitaxial wafer by time-resolved

C. Oh, D. Jang, H. Jung, M. Na, H.W. Kim, W. Bahng, S.-K. Hong

Defects characterization and mitigation through the trench gate patterning process

Remi Le Tiec, Shimon Levi, Shunit Halely

The employment of laser light scattering as a full wafer inspection tool for controlling the quality variation in CMP-finished subsurface damage of SiC

Y. Nakajima, T. Fujiwara, M. Takahara, H. Mihara, K. Toda, D. Dojima, T. Kaneko

High Spatial Resolution Analysis of Dislocations in 4H-SiC Using Low Accelerating Voltage Scanning Electron Microscope (SEM)-Cathodoluminescence

Shunsuke Asahina, Natsuko Asano, Takeshi Otsuka

Hydrogen and point defect introduction into 4H-SiC by plasma treatment

Tong Li, Hitoshi Sakane, Shunta Harada, Yasuyoshi Kurokawa, Masashi Kato

Analysis of Deep-Level Defects in 4H-SiC MPS and PiN Diodes

Lee, Kim, Choi, Cho, Lee, Park, Lee, Park, Byun, Koo

Densification & Single Side Polishing application for improvement of high-level wafer warpage in SiC

Myeonggyun Kim, Yerim Koo, Kyunghwan Kim

Effects of sulfurization on the properties of 4H-SiC Schottky contacts

Roccaforte, Vivona, Panasci, Greco, Fiorenza, Sulyok, Koos, Pécz, Giannazzo

Analysis of Ohmic contacts simultaneously formed on both n-type and p-type 4H-SiC

Atsushi Shimbori, Rahul Valecha, Alex Huang

An Ohmic Contact for SiC-based P-channel HFET

H. Sazawa, S. Kuboya, H. Umezawa, T. Kato, Y. Tanaka

C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

Voo et.al

Qualitative study on laser backside ohmic contact formation of a SiC-Ni interface

Maurice Clair

A New Class of High-Voltage Si-SiC Hybrid Devices with Forced Carrier Extraction for Improved Switching

D.-G. Sdrulla, G. Pristavu, R. Pascu, F. Draghici, G. Brezeanu

Temperature and Gate Voltage Dependence of Rds,on in the 1.2kV SiC Planar and SBD-Embedded MOSFETs

Xue-Fen Hu, Kung-Yen Lee, Chih-Jung Chang, Pei-Chun Liao, Ruei-Ci Wu

A Design of 1.2kV SiC DMOSFET with Locally Etched Poly-Si Gate to Improve Switching Characteristics

D. Baek, O. Seok, S. Kim, J. Kim, Y. Park, H. Yoon, G. Kang, S. Park

SiC Schottky-barrier diode without ion-implanted P-type regions

Jenny Damcevska, Sima Dimitrijev, Jisheng Han, Daniel Haasmann, Philip Tanner

Electric characteristics optimization of machine Learning method in 4H-SiC vertical diffusion

H. Chen, S.-C. Shen, Y.-C. Liu, C.-H. Yen, C.-M. Lai, S.-Y. Huang, C.-Y. Tsai

Advancing High-Temperature Performance in Wide-Bandgap Schottky Diodes with Mesa Structures

Kim, Pookpanratana, Li, Hendricks, Moser, Lee, Lee, Choi, Park, Kim, Koo

Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor

Brosselard et.al

Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate

Piluso et.al

17:30-18:00 Break

18:00-20:30 Industry A

18:00-20:30 Industry B