Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry

EasyChair Preprint 14947

Abstract

Trench filling epitaxy on 4H-SiC using trichlorosilane (HSiCl₃) and hydrogen chloride

(HCl) has shown to improve the tolerance to trench angle misalignment relative to the [11-20]

substrate direction in deeper trenches than previously reported. Extraction of growth rates from

cross-sectional SEM shows that epilayer growth on the mesa corner facet is the most sensitive to

trench misalignment, suggesting that HCl may mediate the facet growth rate within ±1.5° from

[11-20] to maintain symmetric growth.

Keyphrases: 4H-SiC, Superjunction, Trench Filling Epitaxy

@booklet{EasyChair:14947,
  author    = {Rydhem Grover and Kelly Turner and Gerard Colston and Arne Benjamin Renz and Marina Antoniou and Peter Gammon and Phil Mawby and Vishal Shah},
  title     = {Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry},
  howpublished = {EasyChair Preprint 14947},
  year      = {EasyChair, 2024}}