Room 306
Sessions
- Session 3B (Sep 30 11:40-13:00) Sensors & Novel Applications
- Session 4B (Sep 30 14:30-16:00) Advanced Features in SiC MOSFETs
- Session 6B (Sep 30 18:00-20:30) Industry B
- Session 7B (Oct 01 08:40-10:30) MOSFET Channel Optimization
- Session 8B (Oct 01 11:00-12:30) MOS Interfaces
- Session 9B (Oct 01 14:00-16:00) High Temperature Operation & Radiation Effects
- Session 11B (Oct 02 08:40-10:30) Superjunction & High Voltage Devices
- Session 12B (Oct 02 11:00-12:30) Stress & Threshold Voltage Instabilities
- Session 13B (Oct 02 14:00-16:00) Contacts
- Session 15B (Oct 03 08:40-10:30) Novel Device Architectures
- Session 16B (Oct 03 11:00-12:30) Radiation Effects & Superjunction
- Session 17B (Oct 03 14:00-16:00) Device Characterization & Defect Impacts
- Session 19B (Oct 04 08:30-10:30) Ion Implantation
- Session 20B (Oct 04 11:00-12:30) Reliability & Robustness
- Session 21B (Oct 04 13:40-15:00) MOSFET Modeling