ICSCRM 2025: THE 22ND INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS
PROGRAM

Days: Sunday, September 14th Monday, September 15th Tuesday, September 16th Wednesday, September 17th Thursday, September 18th Friday, September 19th

Sunday, September 14th

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Monday, September 15th

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08:30-09:45 Session 2: Opening & Plenary Lecture 1 & Invited Poster
Location: Auditorium
08:30
Possible interaction between basal plane dislocations and point defects in physical vapor transport grown 4H-SiC crystals (abstract)
08:35
Excess Carrier-Induced Modulation of SiC Mechanical Properties: Insights from First-Principles Calculations (abstract)
08:40
Impacts of wafer thinning process using laser slice technique on device characteristics (abstract)
08:45
Body diode reliability and reverse recovery characteristics of short tapered SJ-MOSFET fabricated by MeV Al ion implantation (abstract)
09:45-10:15Break (30min)
10:15-11:45 Session 3A: Detectors & Emerging Devices (MON_1A)
Location: Auditorium
10:15
Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements (abstract)
10:30
Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors (abstract)
10:45
Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector (abstract)
11:00
Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD (abstract)
11:15
Characterization of 4H-SiC lateral MOSFETs up to 773K (abstract)
11:30
1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric (abstract)
10:15-11:45 Session 3B: Quantum Devices (MON_1B)
10:15
Room-temperature coherent photoelectrical readout of single spins in 4H-SiC (abstract)
10:30
Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide (abstract)
10:45
Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi (abstract)
11:00
Tunable, highest-quality factor mechanical oscillators for quantum technology (abstract)
11:45-13:00Lunch (75min)
13:00-14:15 Session 4A: Bulk Growth 1 (MON_2A)
Location: Auditorium
13:00
Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth Machine (abstract)
13:15
SiC Growth by Multi-Wafer Close-Space Sublimation (abstract)
13:30
New insights on nitrogen doping of polycrystalline SiC fabricated by CVD (abstract)
13:00-14:15 Session 4B: Quantum Communication (MON_2B)
13:00
Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks (abstract)
13:15
Entangled Photon Source on the SiCOI Platform (abstract)
13:30
Exploring vanadium defects in SiC for quantum communication (abstract)
14:15-14:45Break (30min)
14:45-16:00 Session 5A: Ion Implantation (MON_3A)
Location: Auditorium
14:45
Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation (BDM) (abstract)
PRESENTER: Mohamed Torky
15:00
Effect of Varying N+ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs (abstract)
15:15
Development of High Energy Channeling Implantation Process for SiC Superjunction Devices (abstract)
15:30
Path for superjunction industrialization by single step high energy channeling implant (abstract)
14:45-16:00 Session 5B: Degradation Phenomenon (MON_3B)
14:45
A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages (abstract)
PRESENTER: Felix Hoffmann
15:00
Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with measurements and simulations (abstract)
15:15
Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes (abstract)
PRESENTER: Rijuta Bagchi
15:30
Carrier lifetime in 4H-SiC substrates and relationship with device reliability (abstract)
15:45
Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation Modeling (abstract)
16:00-16:15Break (15min)
Tuesday, September 16th

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09:15-09:45Break (30min)
09:45-11:30 Session 9A: Bulk Growth 2 (TUE_1A)
Location: Auditorium
09:45
Quality Improvement in 200mm Silicon Carbide Substrate (abstract)
10:00
Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals (abstract)
10:15
Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth (abstract)
10:30
Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth (abstract)
09:45-11:30 Session 9B: FinFETs and Channel Characterization (TUE_1B)
09:45
Origin of high mobility in 4H-SiC FinFETs through theoretical analysis of electron scattering mechanism (abstract)
PRESENTER: Shion Toshimitsu
10:00
FinFET Effect of Vertical-channel Fin-SiC MOSFET (abstract)
10:15
Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall measurements (abstract)
10:30
Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance (abstract)
10:45
Comparison of Ramp- and ac-based C-V Methods for Characterization of SiC Power MOSFETs (abstract)
11:30-13:00Lunch (90min)
13:00-14:15 Session 10A: Substrate Processing (TUE_2A)
Location: Auditorium
13:00
Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method (abstract)
13:15
Key Mechanisms of Laser-Based Splitting and Dicing of 4H-SiC Wafers (abstract)
13:30
Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis (abstract)
13:00-14:15 Session 10B: Radiation Effects and Late News (TUE_2B)
13:00
In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation (abstract)
13:15
Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET (abstract)
13:30
Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias (abstract)
PRESENTER: Zhaoxu Song
13:45
Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs (abstract)
14:15-14:45Break (30min)
14:45-16:15 Session 11A: Extended Defect 1 (TUE_3A)
Location: Auditorium
14:45
Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals (abstract)
15:00
Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? (abstract)
15:15
Polytype analysis of 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates by Raman spectroscopy (abstract)
15:30
Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method (abstract)
14:45-16:15 Session 11B: High-Voltage Devices (TUE_3B)
14:45
Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs (abstract)
15:00
High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction (abstract)
15:15
Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV (abstract)
16:15-16:30Break (15min)
Wednesday, September 17th

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09:15-09:45Break (30min)
09:45-11:30 Session 14A: Defect Interactions (WED_1A)
Location: Auditorium
09:45
Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET (abstract)
10:00
Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers (abstract)
10:15
Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach (abstract)
10:30
Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC (abstract)
10:45
Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers (abstract)
09:45-11:30 Session 14B: Super-Junction MOSFETs (WED_1B)
09:45
Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar engineering (abstract)
10:00
Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process (abstract)
10:15
Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET (abstract)
10:30
Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET (abstract)
10:45
Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold Measurements (abstract)
11:30-13:00Lunch (90min)
13:00-14:15 Session 15A: Color Centers for Quantum Applications (WED_2A)
Location: Auditorium
13:00
Solid state defect emitters with no electrical activity in 4H-SiC (abstract)
13:15
Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks (abstract)
13:30
Interface NIR SPS: Newly observed single photon sources in SiC (abstract)
13:45
Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit (abstract)
13:00-14:15 Session 15B: Applications and Packaging (WED_2B)
13:00
Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction Study (abstract)
13:15
Reliability Analysis and Test Results of SiC Baseless Power Module in bidirectional EV-Charging application (abstract)
13:30
Room temperature bonding of SiC chip and Cu heat sink substrate (abstract)
14:15-14:45Break (30min)
14:45-16:15 Session 16A: Ectended Defect 2 (WED_3A)
Location: Auditorium
14:45
Adverse effects of proton implantation in 4H-SiC epilayers on stacking fault expansion (abstract)
15:00
Application of UV photoluminescence spectrum mapping for stacking faults that were expanded from the in-grown stacking fault on a thick 4H-SiC epilayer (abstract)
15:15
Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate (abstract)
15:30
Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching (abstract)
14:45-16:15 Session 16B: Advanced Processing (WED_3B)
14:45
Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs (abstract)
15:00
Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95m·cm2 (abstract)
15:15
Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC (abstract)
16:15-16:30Break (15min)
Thursday, September 18th

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09:15-09:45Break (30min)
09:45-11:30 Session 19A: Epitaxial Growth 1 (THU_1A)
Location: Auditorium
09:45
Influence of HCl on doping uniformity of 4H-SiC SJ structure (abstract)
10:00
Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy (abstract)
10:15
Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy (abstract)
10:30
Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates (abstract)
10:45
Low defectivity epilayers grown on SmartSiC(TM) engineered substrates (abstract)
09:45-11:30 Session 19B: Impact of Point Defects (THU_1B)
09:45
Detection of energetically close deep levels in electron-irradiated 4H-SiC by capacitance transient analysis based on Bayesian inference (abstract)
10:00
Time-resolved Electron Beam Induced Current (TR-EBIC): A high potential method to map minority charge carrier lifetime in SiC (abstract)
10:15
Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap (abstract)
10:30
Defect formation by irradiation with thermal and fast neutrons in SiC (abstract)
10:45
Evaluation of Auger recombination coefficient in highly N-doped 4H-SiC under high-level injection conditions (abstract)
11:30-13:00Lunch (90min)
13:00-14:45 Session 20A: Fundamental Material Properties (THU_2A)
Location: Auditorium
13:00
DC and RF local electrical properties of macrostepped 4H-SiC surface probed by AFM-SSRM and AFM-sMIM modes (abstract)
13:15
Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface (abstract)
13:30
Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC MOSFETs (abstract)
PRESENTER: Ilias Vandevenne
13:45
Enhanced detection of implanted noble gases and hydrogen in silicon carbide by surface and vacuum engineering in SIMS (abstract)
14:00
Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current (abstract)
PRESENTER: Saverio De Luca
14:15
Temperature dependence of high-field electron and hole drift velocities in 4H-SiC (abstract)
13:00-14:45 Session 20B: Device Concepts and Characterization (THU_2B)
13:00
Modeling of forward current conduction in 4H-SiC PiN diodes (abstract)
13:15
Self-Heating Calibration in SiC Power Diodes (abstract)
13:30
ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES. (abstract)
13:45
SiC Power MOSFET Design for Mitigation of Oscillations in Multi-Chip Power Modules (abstract)
14:00
Design optimization of 600V 4H-SiC Lateral Bi-directional MOSFET (L-BiD-MOSFET) with 3D TCAD simulation (abstract)
14:45-15:00Break (15min)
17:00-18:00Break (60min)
Friday, September 19th

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08:30-10:00 Session 22A: Epitaxial Growth 2 (FRI_1A)
Location: Auditorium
08:30
Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers (abstract)
08:45
Thick epitaxial growth for detectors application (abstract)
09:00
Ultra-thick (~200µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor (abstract)
09:15
Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices (abstract)
09:30
Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways (abstract)
09:45
Epitaxial growth of 3C-SiC and 4H-SiC by travelling solvent method under isothermal conditions (abstract)
08:30-10:00 Session 22B: Interface Characterization (FRI_1B)
08:30
Extremely uniform surface potential near the valence band edge at nitrided 4H-SiC/SiO2 interface (abstract)
08:45
Physical Origin of Crystal Face-Dependent Electron Mobility in 4H-SiC (0001) and (11-20) MOSFETs (abstract)
09:00
A charge pumping study on interface trap creation in SiC trench MOSFETs during gate switching instability (abstract)
09:15
The impact of NO annealing on the p-type SiC/SiO2 interface: A LE- μSR study (abstract)
10:00-10:30Break (30min)
10:30-12:00 Session 23A: Interface Processing (FRI_2A)
Location: Auditorium
10:30
Preliminary Study into Ferroelectric Properties of HfO2/SiO2 SiC MOS Capacitors for Improved Short Circuit Capability (abstract)
10:45
Impacts of plasma nitridation on SiC surface (abstract)
11:00
Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition (abstract)
11:15
High-Temperature H2- and N2-containing Surface Conditioning for SiO2/4H-SiC Interface Optimization (abstract)
11:30
Enhancing SiO2/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance (abstract)
11:45
Carbon-related defect formation during high temperature Ar annealing in 4H-SiC enhanced by prior thermal oxidation and suppressed by H2 annealing (abstract)
10:30-12:00 Session 23B: Gate Reliability (FRI_2B)
10:30
Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening (abstract)
10:45
Mechanism of Threshold Voltage Drift in SiC MOSFETs under Bipolar AC Gate Stress via Photon-Assisted Electron Injection (abstract)
11:00
High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs (abstract)
11:15
Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET (abstract)
12:00-13:15Lunch (75min)
13:15-15:00 Session 24A: Bulk Growth 3 (FRI_3A)
Location: Auditorium
13:15
Development of High-quality 6-inch P-type 4H-SiC Substrates Using Solution Growth (abstract)
13:30
Insights from 3D Modeling of SiC Solution Growth: Realization of Unidirectional Solution Flow and High Growth Rate by Asymmetric Hot-zone Designs (abstract)
13:45
Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing (abstract)
13:15-15:00 Session 24B: Quantum Sensing and Quantum Control (FRI_3B)
13:15
Detection and characterization of divacancy-related defects in 4H-SiC by coherent photoelectrical spin readout at room temperature (abstract)
13:30
Theory of optical spin-polarization and related ODMR contrast optimization strategy for an axial divacancy center in 4H-SiC (abstract)
13:45
PL6 centers in 4H-SiC for spin-based quantum sensing (abstract)
14:00
All-electrical quantum magnetometry based on commercially off-the-shelf SiC devices (abstract)
14:15
High-resolution nanoscale AC quantum sensing in SiC (abstract)
15:00-15:15Break (15min)