Unlocking New Possibilities: Power Devices and the Future of Semiconductors (abstract)

Possible interaction between basal plane dislocations and point defects in physical vapor transport grown 4H-SiC crystals (abstract)

Excess Carrier-Induced Modulation of SiC Mechanical Properties: Insights from First-Principles Calculations (abstract)

Impacts of wafer thinning process using laser slice technique on device characteristics (abstract)

Body diode reliability and reverse recovery characteristics of short tapered SJ-MOSFET fabricated by MeV Al ion implantation (abstract)

Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements (abstract)

Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors (abstract)

Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector (abstract)

Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD (abstract)

Characterization of 4H-SiC lateral MOSFETs up to 773K (abstract)

1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric (abstract)

(Invited) A SiC-based Desktop Quantum Computer (abstract)

Room-temperature coherent photoelectrical readout of single spins in 4H-SiC (abstract)

Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide (abstract)

Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi (abstract)

Tunable, highest-quality factor mechanical oscillators for quantum technology (abstract)

(Invited) Approaches Toward High-Quality and Cost-Effective Bulk Growth of SiC Crystals (abstract)

Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth Machine (abstract)

SiC Growth by Multi-Wafer Close-Space Sublimation (abstract)

New insights on nitrogen doping of polycrystalline SiC fabricated by CVD (abstract)

(Invited) Atomic defects in silicon carbide – A scalable quantum technology (abstract)

Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks (abstract)

Entangled Photon Source on the SiCOI Platform (abstract)

Exploring vanadium defects in SiC for quantum communication (abstract)

Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation (BDM) (abstract)

Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs (abstract)

Development of High Energy Channeling Implantation Process for SiC Superjunction Devices (abstract)

Path for superjunction industrialization by single step high energy channeling implant (abstract)

A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages (abstract)

Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with measurements and simulations (abstract)

Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes (abstract)

Carrier lifetime in 4H-SiC substrates and relationship with device reliability (abstract)

Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation Modeling (abstract)

Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching (abstract)

Ultra-Pure SiC Source material for optical SiC crystal growth (abstract)

Influence of interfacial pores between seed/graphite holder interface on thermal field in 4H-SiC crystals grown by physical vapor transport (abstract)

Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε (abstract)

Graphite – The Hot Zone Hero (abstract)

Optimizing Diamond Slurry Parameters for Polishing SiC Wafers (abstract)

Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates (abstract)

Polytype Transitions in Silicon Carbide: A Macroscopic View (abstract)

Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single Crystals (abstract)

Photoluminescence studies of defect formation during the seeding process of physical vapor transport growth of SiC (abstract)

Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse (abstract)

High Quality 8-inch 4H-SiC Epitaxial Products (abstract)

Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth (abstract)

SiC engineered substrate versatility demonstration versus industry requirement (abstract)

Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process (abstract)

Ignition point control of high oxidant concentration CMP slurry (abstract)

Optimization of DIW brush cleaning technology using spin scrubber in SiC device manufacturing process (abstract)

Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography (abstract)

Ultrafast Imaging for Deep Defect Imaging Through Entire SiC Wafers (abstract)

Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates (abstract)

Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope (abstract)

Evaluation of oxide processing steps using contactless corona-based CV measurements (abstract)

Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT method (abstract)

Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography (abstract)

Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography (abstract)

Optical characterization of heavy-ion induced damage in 4H-SiC (abstract)

Minority charge carrier lifetime for evaluating 4H-SiC epitaxial growth by Microwave detected Photoconductivity Decay (abstract)

Atomistic simulations of SiC crystal growth phenomena (abstract)

VT modulation by dipole effect on 4H-SiC with Atomic Layer Deposited Al₂O₃/SiO₂ dielectrics (abstract)

Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate (abstract)

Suppression of stacking faults expansion by backside proton implantation into SiC substrates (abstract)

Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling Implantation (abstract)

Investigation on thermal stability for Silicon-cap-annealed Ohmic Contact on n-type 4H-SiC (abstract)

Silicon Carbide Wafering (abstract)

Reduction of Sidewall Roughness in SiC Trench Formation by Improvement of Photoresist Mask (abstract)

Multi-scale model of ICP-RIE process for improvement of SiC gate trench shape (abstract)

Electrical Properties of 4H-SiC MOSFETs on Non-Polar Faces with Various Surface Treatments (abstract)

Extraction of trench sidewall capacitance by linear component separation towards wafer level evaluation (abstract)

Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation (abstract)

Impact of ambient conditions on oxide thickness distribution on 4H-SiC in thermal oxidation furnace (abstract)

Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface nitridation (abstract)

Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face (abstract)

Dynamic conduction behavior of SiC-Mosfets in the subthreshold regime and the impact of deep oxide traps to the channel depletion (abstract)

5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode (abstract)

Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test (abstract)

JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs (abstract)

Simultaneous p- and n-type doping carrier profiling of 4H-SiC MOSFETs by Scanning Microwave Impedance Microscopy (abstract)

Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances (abstract)

Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET (abstract)

The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics (abstract)

Influence of different contact lengths on 4H-SiC TLM test structures (abstract)

Simulating Short Circuit events on SiC MOSFET devices (abstract)

Impact of Transient Surge Current Pulses on Bipolar Degradation in SiC Power MOSFETs (abstract)

Investigation of Asymmetric Switching Characteristics of SiC MOSFETs Using Double Pulse Test (abstract)

New 1200V SiC MOSFET with improved specific-on-resistance and short-circuit capability characteristics (abstract)

10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes (abstract)

Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes (abstract)

Anodic Oxidation of 4H-Silicon Carbide (abstract)

Impact of JFET Width on Gate Oxide Reliability under HTRB Conditions in 1700V SiC MOSFETs (abstract)

RC Snubber Co-Design of SiC Power Modules considering Impact on Transient Switching Characteristics (abstract)

Impact of Gamma-Ray Irradiation on the Dynamic Switching Performance of TO-247-3L vs. TO-247-4L 4H-SiC MOSFETs (abstract)

Impact of VDS Bias, Load Current and Temperature on Long-term Switching Operation of 1.2 kV SiC MOSEFTs (abstract)

Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation (abstract)

A low inductance SiC MOSFET power module packaging design with PCB shielding layer (abstract)

Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution (abstract)

Dynamic switching benchmark of latest gen SiC MOSFETs for Automotive and Urban Air Mobility power modules (abstract)

Where light ends, energy begins: Transformation of waste bulbs enclosures into multiphasic silicon carbide for Lithium-ion battery (abstract)

Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices (abstract)

Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor (abstract)

4H-SiC as Material for Electricity Infrastructure (abstract)

(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development (abstract)

Quality Improvement in 200mm Silicon Carbide Substrate (abstract)

Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals (abstract)

Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth (abstract)

Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth (abstract)

Reconstruction of PVT-SiC Growth Setup to Simultaneously Achieve High Material Yield, High Growth Rate, and Large Crystal Height (abstract)

(Invited) TCAD-Driven Design and Analysis of Advanced 3D SiC MOSFET Structures (abstract)

Origin of high mobility in 4H-SiC FinFETs through theoretical analysis of electron scattering mechanism (abstract)

FinFET Effect of Vertical-channel Fin-SiC MOSFET (abstract)

Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall measurements (abstract)

Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance (abstract)

Comparison of Ramp- and ac-based C-V Methods for Characterization of SiC Power MOSFETs (abstract)

(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential (abstract)

Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method (abstract)

Key Mechanisms of Laser-Based Splitting and Dicing of 4H-SiC Wafers (abstract)

Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC (abstract)

In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation (abstract)

Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET (abstract)

Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias (abstract)

Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs (abstract)

Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET (abstract)

(Invited) The mechanisms of Defect Replication, Propagation, Modification, Nucleation and Multiplication in 4H-SiC PVT-grown Substrates and CVD-grown Homo-epitaxial Layers (abstract)

Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals (abstract)

Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? (abstract)

Polytype analysis of 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates by Raman spectroscopy (abstract)

Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method (abstract)

(Invited) Technology Trends of performance improvement in SiC MOSFETs: The Impact of Trench and Super Junction Structure Technology (abstract)

Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs (abstract)

High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction (abstract)

Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV (abstract)

Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method (abstract)

Homoepitaxy and defect control of 300-μm ultra-thick 4H-SiC layers (abstract)

Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers (abstract)

Ring Coating Thickness Control for High Quality N type 4H-SiC Epilayers Based on Growth and Doping Kinetic Analysis (abstract)

Control of SSF Defects in 8-inch SiC Epitaxial Wafers (abstract)

Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers (abstract)

Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning (abstract)

An In-Situ Study of Al Effects on Step Structures under Diffusion Controlled 4H-SiC Solution Growth (abstract)

Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier Diodes (abstract)

Comprehensive Analysis of Carrier Lifetime and Deep-Level Traps in 4H-SiC: Impact of Epitaxial Growth Temperature and Rate (abstract)

Thick SiC-4H epitaxy perspectives (abstract)

The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers (abstract)

Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer (abstract)

Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals (abstract)

SiC Single Wafer Chemical Mechanical Polishing Process Improvements for Throughput and Surface Finish (abstract)

SIMS Profiling of 3D SiC Mesas: Top and Sidewall Analysis (abstract)

Improvement of gate-source short failure by suppressing abnormal polySi layer in 1200V SiC MOSFETs (abstract)

Non-Destructive Optical Detection of Dislocation Defects in N-type SiC Substrate Wafers (abstract)

Advanced defects study and monitoring in new generation 4H-SiC devices (abstract)

Investigation of Mechanical Stress and Warpage in 200mm Silicon Carbide Wafers: Implications for Production Scalability (abstract)

Multi-channel defect inspection for 4H-SiC epitaxial wafer and integrated defect classification (abstract)

Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes (abstract)

Formation and reduction of surface pits on 4H-SiC epitaxial layer (abstract)

Optical localization of passivation discoloration using admittance spectroscopy (abstract)

Characterization of 3C-SiC thick epitaxial layers grown on off- and on-axis 4H-SiC substrate (abstract)

Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique (abstract)

Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM (abstract)

Challenges in 1SSF detection in 4H-SiC epilayer and related failure (abstract)

Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers (abstract)

Investigating the temperature dependence of charge carrier lifetime in low-doped n-type 4H-SiC (abstract)

Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes (abstract)

Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer (abstract)

Evaluation of transmission spectra of vanadium-doped 4H-SiC substrates by optical transmittance measurement (abstract)

Characterization of Stress and Defects in 4H Silicon Carbide Wafers by Scanning Infrared Depolarization (abstract)

Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation (abstract)

Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes (abstract)

Effects of Thermal and CVD Gate Oxides on Dielectric Properties and Sidewall Capacitance in SiC Trench MOS Capacitors (abstract)

Improved Silicide Formation in Vertical 4H-SiC JFET via Double Spacer Process (abstract)

Critical Wafer Processes for SiC Device Fabrication (abstract)

Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors (abstract)

Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition (abstract)

Utilizing SiO₂ Reflow for Corner Rounding to Prevent Cracking in Passivation Layers Above 500 °C (abstract)

Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer (abstract)

SiO₂/SiC Interface Engineering via Low-temperature NO Oxynitridation of SiC Surface Feasible with Si Device Fabrication Equipment (abstract)

Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC (abstract)

Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal (abstract)

Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes (abstract)

Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers (abstract)

The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC (abstract)

UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers (abstract)

Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer etching (abstract)

Channeling ion implantation along the <0001> direction in 4H-SiC: difference in the Si- and C-faces (abstract)

4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time (abstract)

Effect of energy injection on the interfacial structure and mechanical behavior of Si/Al: A molecular dynamics study (abstract)

Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers (abstract)

Dynamic Current-Voltage Behavior of SiC Power MOSFETs (abstract)

A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs (abstract)

Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity (abstract)

A Comparative Analysis of Proton Irradiated 1.2 kV SiC Edge Termination Test Group (abstract)

Optimization of a 1200V SiC lateral SiC Schottky diode (abstract)

Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs (abstract)

5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors (abstract)

Fowler-Nordheim current at negative gate bias in SiC MOSFETs (abstract)

Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results (abstract)

Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K (abstract)

4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments (abstract)

Impact of Edge Termination Structure and Length on Switching Characteristics of SiC MOSFETs (abstract)

Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET (abstract)

TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs (abstract)

Study of SiC Thyristors with Integrated Temperature Sensors (abstract)

Simulation of highly sensitive 3C-SiC strain sensor (abstract)

A Novel Structure Design of SiC-based SCR Structure with High Holding Voltage Using Segment Topology for High Voltage ESD Protection (abstract)

A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation (abstract)

Ga₂O₃ film with ultrahigh breakdown field via novel aerosol deposition method (abstract)

Electrical identification of color centers in 6H silicon carbide using a comparative study of deep level transient spectroscopy and density functional theory (abstract)

Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor Devices. (abstract)

Ag:AZO Electrodes Deposited by Co-sputtering Using FTS to Improve Photodetector Performance (abstract)

Investigation of phase transition and its impact on the crystal structure and material properties of polycrystalline α/β Ga₂O₃ thin film (abstract)

Low-pressure Mist-CVD technique for Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga₂O₃ (abstract)

Impact of Socket and Current Shunt on Switching Characteristics of GaN HEMTs (abstract)

Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor (abstract)

Growth and Properties of SiGe - AlN Core-Shell Crystals (abstract)

Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method (abstract)

Optical characterization of doping-induced defects in n-type 4H-SiC (abstract)

Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide (abstract)

Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces (abstract)

Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins (abstract)

The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy (abstract)

Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide (abstract)

Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation (abstract)

Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar (abstract)

Reducing Parasitic Inductance Through Power Terminal Grouping in SiC Power Modules for EV Applications (abstract)

Fast Speed SiC IPM Module with Zero Voltage Gate Driving Utilizing Active Miller Clamp Function on Drive IC (abstract)

Novel 1.2kV SiC MOSFET with New Top-side Cooling Package for Automotive Applications (abstract)

Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications (abstract)

High-Density Packaging Approaches for SiC Power MOSFET Modules (abstract)

Comparative Numerical Analysis of Cu Clip and Al Wire Bonding Structures in SiC Schottky Barrier Diodes (abstract)

Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based IPM (abstract)

It Takes a Village: Shaping the Next Era in SiC Technology (abstract)

(Invited) Point defect engineering in SiC to realize highly reliable power devices (abstract)

Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET (abstract)

Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers (abstract)

Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach (abstract)

Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC (abstract)

Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers (abstract)

(Invited) Comprehensive Study on Theoretical Performance Limit of 4H-SiC Full- and Semi-Superjunction Structures (abstract)

Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar engineering (abstract)

Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process (abstract)

Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET (abstract)

Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET (abstract)

Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold Measurements (abstract)

Solid state defect emitters with no electrical activity in 4H-SiC (abstract)

Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks (abstract)

Interface NIR SPS: Newly observed single photon sources in SiC (abstract)

Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit (abstract)

Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent control (abstract)

(Invited) Lifetime Assurance of Electric Vehicle SiC Power Modules through Thermal Model-Based Heat Management Strategy (abstract)

Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction Study (abstract)

Reliability Analysis and Test Results of SiC Baseless Power Module in bidirectional EV-Charging application (abstract)

Room temperature bonding of SiC chip and Cu heat sink substrate (abstract)

(Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers (abstract)

Adverse effects of proton implantation in 4H-SiC epilayers on stacking fault expansion (abstract)

Application of UV photoluminescence spectrum mapping for stacking faults that were expanded from the in-grown stacking fault on a thick 4H-SiC epilayer (abstract)

Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate (abstract)

Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching (abstract)

(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices (abstract)

Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs (abstract)

Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm² (abstract)

Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress (abstract)

Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H₂/Ar annealing process (abstract)

Numerical Modeling of Impurities and Defects in 4H-SiC (abstract)

Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates (abstract)

SmartSiC™ engineered substrate: a robust solution to SiC power devices bipolar degradation (abstract)

Growth of 8 inches SiC single crystal with low BPDs defect (abstract)

Growth Simulation and Composition Control of SiC Crystal (abstract)

Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals (abstract)

SiC crystal growth simulations using the minimal atomic energy deposition method (abstract)

growth and characterization of “IsoPure” epitaxial layers for quantum applications (abstract)

Two-Step Electrochemical Mechanical Polishing of Silicon Carbide : Decoupled Anodic Oxidation and CMP for Enhanced Removal Efficiency (abstract)

Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering (abstract)

Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth. (abstract)

Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step Dynamics (abstract)

Effect of Crucible and Thermal Insulation Porosity on Growth Rate and Nitrogen Incorporation in PVT SiC (abstract)

Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal (abstract)

Modeling SiC crystal growth and crucible etching in the PVT furnace (abstract)

The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth (abstract)

Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress measurement (abstract)

Effects of Rotational Stacking Faults in Electronic Structure of 4H-SiC Monolayer under Electric Field Stress: A DFT-Based Molecular Dynamics Study (abstract)

Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode (abstract)

Micropipes in SiC die Observed by Molten KOH Etching (abstract)

SiC bulk inspection: digital defect traceability from puck to epi-ready wafers (abstract)

Photoluminescence study on micropipes in SiC substrates for improving comprehensive full-wafer defect detection accuracy (abstract)

Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates (abstract)

Application of spectroscopic ellipsometry in silicon carbide technology (abstract)

4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR) (abstract)

A Comprehensive Study of Buffer Layer Thickness and Doping Effects on SiC Defect Density (abstract)

EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC surfaces (abstract)

Depth profiling of boron-related minority traps in n-type 4H-SiC by junction DLTS measurements (abstract)

Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs (abstract)

Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation (abstract)

Strain Evolution and Formation of Interfacial Dislocations in Ion-Implanted 4H-SiC Epilayers during Activation Annealing (abstract)

Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach (abstract)

Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices (abstract)

Silicon Carbide Epitaxial Defect and Substrate Defects Analysis by Dynamic Photoluminescence and X-ray Topography (abstract)

Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration (abstract)

Impact of Re-oxidation on Bias-induced Threshold Voltage Instability of SiC Power MOSFETs (abstract)

Impact of ALD Oxidants and Deposition Temperature on Electrical Characteristics of Al₂O₃/SiO₂/SiC MOS-Capacitors (abstract)

Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates (abstract)

Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes (abstract)

Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes (abstract)

Development of advanced Ni/4H-SiC contact modules by using laser annealing (abstract)

Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Time Dependence of Processed Groove Profile – (abstract)

Surface Morphologies and Microstructure of Ni and Ni/Nb ohmic contacts on 4H-SiC (abstract)

Wide temperature range analysis of ITO/4H-SiC Schottky diodes with applications in UV photodetection (abstract)

Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding (abstract)

Effects of the number of processing passes on laser slicing of SiC (abstract)

Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea (abstract)

BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser (abstract)

Low-Defect Ni/Ti Composite Backside Ohmic Contact for thinned 4H-SiC Devices Formed by 355 nm UV Laser Annealing (abstract)

Dopant activation and compensation in p-type 4H-SiC formed by Al⁺ implantation into V-doped semi-insulating substrates (abstract)

On the process optimization of ALD-deposition of SiO₂ for SiC MOS processes (abstract)

NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact (abstract)

First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates (abstract)

Molecular Dynamics Investigation of Radiation-Induced Damage and Mechanical Behavior in Amorphous Si₃N₄ (abstract)

Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications (abstract)

Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis (abstract)

Demonstration of Hybrid-Bonded, Single-Chip 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures (abstract)

THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES. (abstract)

Impact of Active Cell Geometry on the Static Performance of 10kV 4H-SiC JBS (Junction Barrier Schottky) Diodes (abstract)

Development of device failure prediction method using multi-modal analysis technique (abstract)

High temperature operating characteristics of 4H-SiC Active Pixel Sensors (abstract)

Electrical Characterization and Modeling of IC Gen. 12 4H-SiC JFETs (abstract)

Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration (abstract)

Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications (abstract)

Gate leakage imaging of silicon carbide power MOSFETs under negative-bias gate stress (abstract)

Designing and Simulations of 4H-SiC Neutron Sensors for Boron Neutron Capture Therapy (abstract)

Impact of SiC MOSFET Topologies and Gate Runner Design on On-Resistance and Switching Performance (abstract)

An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR) (abstract)

Fabrication of a 1200V SiC Trench MOSFET with an Inverted T-shaped Deep P Junction Based on an 8-inch Platform (abstract)

Enhancing the Short-Circuit Capability of Embedded-SBD 4H-SiC MOSFETs through Ni Silicide Formation (abstract)

Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method (abstract)

Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires (abstract)

Optimization of Source-connected Field Plate in AlGaN/GaN HEMTs towards high-power and high-frequency Operations: A Simulation Study (abstract)

A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin Qubits (abstract)

Towards realization of hybrid spin networks in solid-state system (abstract)

Ohmic p-GaN Gate HEMTs with Al₂O₃/SiO₂ T-gate Dual Insulator Layers (abstract)

Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters (abstract)

Fabrication of ultrathin freestanding 4H-SiC layers by doping-dependent monolithic electrochemical etching (abstract)

Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy (abstract)

Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method (abstract)

Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity (abstract)

Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD (abstract)

Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector (abstract)

A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect Behavior (abstract)

Influence of doping on heavy-ion induced color centers in 4H-SiC (abstract)

Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins (abstract)

Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of cryogenic temperatures (abstract)

Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling Test (abstract)

Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output (abstract)

Comparison of Static and Dynamic Characteristics of SiC MOSFETs with Respect to TO-247 and Hermetic Package Types (abstract)

Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules (abstract)

Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts (abstract)

Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress (abstract)

Accelerated Bipolar Degradation Robustness (aBDR) Evaluation in SiC MOSFETs (abstract)

Discrepancy of Datasheet Measurements in SiC MOSFETs in Bare Dies and TO-247 Packaged Discrete Devices (abstract)

Exploring the Versatility of SiC: Emerging Applications beyond Power Electronics (abstract)

(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions (abstract)

Influence of HCl on doping uniformity of 4H-SiC SJ structure (abstract)

Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy (abstract)

Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy (abstract)

Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates (abstract)

Low defectivity epilayers grown on SmartSiC™ engineered substrates (abstract)

(Invited) The Role of Point Defects in Performance and Reliability: From Material and Device to Application (abstract)

Detection of energetically close deep levels in electron-irradiated 4H-SiC by capacitance transient analysis based on Bayesian inference (abstract)

Time-resolved Electron Beam Induced Current (TR-EBIC): A high potential method to map minority charge carrier lifetime in SiC (abstract)

Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap (abstract)

Defect formation by irradiation with thermal and fast neutrons in SiC (abstract)

Evaluation of Auger recombination coefficient in highly N-doped 4H-SiC under high-level injection conditions (abstract)

DC and RF local electrical properties of macrostepped 4H-SiC surface probed by AFM-SSRM and AFM-sMIM modes (abstract)

Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface (abstract)

Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC MOSFETs (abstract)

Enhanced detection of implanted noble gases and hydrogen in silicon carbide by surface and vacuum engineering in SIMS (abstract)

Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current (abstract)

Temperature dependence of high-field electron and hole drift velocities in 4H-SiC (abstract)

Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction (abstract)

(Invited) SiC JFETs: Pushing Performance Boundaries or Re-inventing the Wheel? (abstract)

Modeling of forward current conduction in 4H-SiC PiN diodes (abstract)

Self-Heating Calibration in SiC Power Diodes (abstract)

ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES. (abstract)

SiC Power MOSFET Design for Mitigation of Oscillations in Multi-Chip Power Modules (abstract)

Design optimization of 600V 4H-SiC Lateral Bi-directional MOSFET (L-BiD-MOSFET) with 3D TCAD simulation (abstract)

Growth and analysis of low resistivity polycrystalline silicon carbide using physical vapor transport (abstract)

Carbide coated graphite with enhanced mechanical and chemical properties for SiC crystal growth (abstract)

Successful Development of 12 inch SiC crystal by PVT method (abstract)

Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers (abstract)

8-12 Inch Silicon Carbide Wafer Used for AR Glasses (abstract)

Behaviors of basal plane dislocations in 4H-SiC epilayer grown on the facet trace region of substrate (abstract)

In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property Analyses (abstract)

Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson Solvent (abstract)

Distribution of the electrical resistivity of a n-type 4H-SiC crystal (abstract)

CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching (abstract)

Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth (abstract)

Solution Growth Technique of Silicon Carbide with In Situ Observation (abstract)

Effect of Various mm-sized Source Granules on SiC Single Crystal Growth via the PVT Method (abstract)

6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT (abstract)

A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-based Devices (abstract)

Quantitative Simulation of Bipolar Degradation in 4H-SiC Using UV Pulsed Laser: Considerations on the Critical Duration of Threshold Minority Carrier Density (abstract)

Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range (abstract)

Metrology and Visualization of Silicon Carbide Surfaces via Interferometric 3D Optical Profilometry and Scanning Spreading Resistance Microscopy (abstract)

Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch Processing (abstract)

Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD measurement (abstract)

Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC (abstract)

Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC. (abstract)

The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport (abstract)

Observation of Depletion Layer in SiC Diodes Using a Simple EBIC Holder (abstract)

Impact of Predefined Defects on Device Reliability (abstract)

High Quality P-type 4H-SiC Growth by PVT Method (abstract)

Deep-Level Defect Effects on the performance of 4H-SiC Superjunction MOSFETs (abstract)

The elusive Bulk Inclusion, sizing, wafer- and ingot-level localization and their effect on dislocation generation and epitaxial defectivity in 4H-SiC (abstract)

Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation (abstract)

Rapid Wafer-Scale Evaluation of Defects in SiC Using Deep Learning (abstract)

Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping (abstract)

Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping (abstract)

An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC (abstract)

Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer (abstract)

Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques (abstract)

Method to get different silicon carbide trenches profile using plasma etching for high performance SiC MOSFET (abstract)

Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique (abstract)

Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers (abstract)

A Study on Simplifying the Process by Using Multiple Epitaxy and Implantation Method to fabricate SiC Super Junction (abstract)

Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance (abstract)

The effect of the vertical ultrasonic vibration on the blade dicing of the SiC wafer (abstract)

Slurry-less Electrochemical Mechanical Polishing Characteristics of 4H-SiC in Weak Alkaline Electrolyte (abstract)

Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain (abstract)

Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes (abstract)

Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing (abstract)

Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers (abstract)

Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs (abstract)

Atom Probe Tomography for Highly Implanted Phosphorus Ion in Silicon Carbide (abstract)

Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes (abstract)

Trench Superjunction (SJ) Platform Technology for SiC Power Devices (abstract)

First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example (abstract)

Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis (abstract)

2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET (abstract)

Study on the Current Hump in SiC MOSFETs Induced by False Turn‑on of the High‑Side Body Diode (abstract)

Modeling of the Physical Properties of 3C-SiC/4H-SiC Heterostructures for TCAD Simulation (abstract)

Impact of cell design on switching performance of 1.7kVSiC VDMOSFET (abstract)

Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs (abstract)

Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes (abstract)

Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry (abstract)

4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications (abstract)

Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs (abstract)

Optical Critical Dimension Metrology for the SiC Trench MOSFET Process (abstract)

'Ladder' design for improved static electrical characteristics for 1.2kV 4H-SiC MOSFET with deep P-well (abstract)

Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET (abstract)

A study on different SiC MOSFET Edge Termination Ruggedness (abstract)