ICSCRM 2025: THE 22ND INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS

A
Abbas, Ahmad	Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes
Abe, Hiroshi	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide Room-temperature coherent photoelectrical readout of single spins in 4H-SiC Detection and characterization of divacancy-related defects in 4H-SiC by coherent photoelectrical spin readout at room temperature
Abe, Kozo	BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser
Abe, Tetsuya	Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity
Abe, Yoshihisa	Solution Growth Technique of Silicon Carbide with In Situ Observation
Abrahamson, Joe	Graphite – The Hot Zone Hero
Acerbi, Eleonora	A Comprehensive Study of Buffer Layer Thickness and Doping Effects on SiC Defect Density Comprehensive Analysis of Carrier Lifetime and Deep-Level Traps in 4H-SiC: Impact of Epitaxial Growth Temperature and Rate
Adachi, Hiroya	Dopant activation and compensation in p-type 4H-SiC formed by Al⁺ implantation into V-doped semi-insulating substrates
Adam, Gali	Theory of optical spin-polarization and related ODMR contrast optimization strategy for an axial divacancy center in 4H-SiC
Adamo, Salvatore	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure
Adeyemi, Seye	Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding
Agarwal, Anant	It Takes a Village: Shaping the Next Era in SiC Technology
Agbo, Nereus Sunday	Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability
Ahn, Hyung Soo	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Ahn, Won-Il	Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor Devices.
Ai, Xiangle	Method to get different silicon carbide trenches profile using plasma etching for high performance SiC MOSFET
Akiyoshi, Kyohei	Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques Impacts of wafer thinning process using laser slice technique on device characteristics
Alaluss, Mohamed	Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling Test
Alassaad, Kassem	SiC engineered substrate versatility demonstration versus industry requirement
Alassaad, Kassem	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Alatise, Olayiwola	High-Density Packaging Approaches for SiC Power MOSFET Modules Discrepancy of Datasheet Measurements in SiC MOSFETs in Bare Dies and TO-247 Packaged Discrete Devices
Alberti, A.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Alberti, Alessandra	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Albrechtvechietti, Fernanda	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Alessandrino, Mario Santi	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure
Alfieri, Giovanni	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Allegri, Sebastian	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth Thick SiC-4H epitaxy perspectives
Allibert, Frederic	SmartSiC™ engineered substrate: a robust solution to SiC power devices bipolar degradation
Allibert, Frédéric	Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Almahmoud Almerhebi, Wissam	Self-Heating Calibration in SiC Power Diodes
Almeida, Carlos	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Alonzo, Maria Luisa	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth Thick SiC-4H epitaxy perspectives Thick epitaxial growth for detectors application
Amamiya, Takanori	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Amishiro, Hiroyuki	Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET
Anderson, Christopher Paul	(Invited) Mitigating electrical and magnetic noise for SiC qubits and photonics
Antoniou, M.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Antoniou, Marina	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates A low inductance SiC MOSFET power module packaging design with PCB shielding layer Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach Optimization of a 1200V SiC lateral SiC Schottky diode UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Antoniou, Marina	Trench Superjunction (SJ) Platform Technology for SiC Power Devices
Anzalone, Ruggero	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates Micropipes in SiC die Observed by Molten KOH Etching Advanced defects study and monitoring in new generation 4H-SiC devices
Arai, Ryuta	Carrier lifetime in 4H-SiC substrates and relationship with device reliability
Arena, Giuseppe	ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES.
Arena, Giuseppe	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Impact of Predefined Defects on Device Reliability
Arneberg, Nils-Christian	Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals
Asada, Satoshi	Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers Modeling of forward current conduction in 4H-SiC PiN diodes
Asada, Satoshi	Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers
Asahina, Shunsuke	Observation of Depletion Layer in SiC Diodes Using a Simple EBIC Holder
Asano, Hiroshi	Ignition point control of high oxidant concentration CMP slurry
Asano, Takashi	Oxidation effects on optical properties of Si and SiC photonic crystal nanocavities
Asano, Yusuke	Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson Solvent
Asenov, Asen	2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Ashida, Koji	Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping
Ashimoto, Sora	Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth
Asselborn, Vanessa	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Astakhov, Georgy	PL6 centers in 4H-SiC for spin-based quantum sensing
Astner, Thomas	Exploring vanadium defects in SiC for quantum communication
Atmaca, Gokhan	Ohmic p-GaN Gate HEMTs with Al₂O₃/SiO₂ T-gate Dual Insulator Layers
Attcity, Stan	Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Atukpor, Emmanuel	Defect formation by irradiation with thermal and fast neutrons in SiC
Audinot, Jean-Nicolas	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Avramenko, Marina	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress A charge pumping study on interface trap creation in SiC trench MOSFETs during gate switching instability Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC MOSFETs
Azadmand, Mani	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth
Azimi, Hamed	Dynamic conduction behavior of SiC-Mosfets in the subthreshold regime and the impact of deep oxide traps to the channel depletion
B
Badalà, P.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Badalà, Paolo	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Badeeb, Leila	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Badir, Melih	Graphite – The Hot Zone Hero
Bae, Hyun-Cheol	Comparison of Static and Dynamic Characteristics of SiC MOSFETs with Respect to TO-247 and Hermetic Package Types
Bae, Siyoung	Two-Step Growth of κ-Ga₂O₃ Thin Films on 4H-SiC Substrate Using Mist CVD with Temperature-Varied Buffer Layers Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method
Bae, Sung-Bum	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Baek, Dusan	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test A Comparative Analysis of Proton Irradiated 1.2 kV SiC Edge Termination Test Group
Bagchi, Rijuta	Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Bahng, Wook	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Baier, Leander	Reduction of Sidewall Roughness in SiC Trench Formation by Improvement of Photoresist Mask Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Characterization of 4H-SiC lateral MOSFETs up to 773K
Bailey, Louise	EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC surfaces
Balkas, Elif	Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction
Balogh, Emeric	Optical Critical Dimension Metrology for the SiC Trench MOSFET Process
Balogh, László	Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique
Baquiran, Darwin Nhed	Effects of Rotational Stacking Faults in Electronic Structure of 4H-SiC Monolayer under Electric Field Stress: A DFT-Based Molecular Dynamics Study
Baringhaus, Jens	Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process
Barker, Anthony	Critical Wafer Processes for SiC Device Fabrication
Barkley, Adam	Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening
Barlett, Jessica	Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse
Barnett, Richard	Critical Wafer Processes for SiC Device Fabrication
Bartolf, Holger	High-Temperature H₂- and N₂- containing Surface Conditioning for SiO₂/4H-SiC Interface Optimization
Basa, Péter	Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique
Basler, Thomas	Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling Test Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with measurements and simulations
Bassi, A.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Bassi, Anna	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Bathurst, Lara	Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse
Bay, Norbert	Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Bea, Changwan	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Bean, Alex	Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
Becker, Tom	Extraction of trench sidewall capacitance by linear component separation towards wafer level evaluation
Bedialauneta Rodríguez, Daniel	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Behera, Sushree Swateeprajnya	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide
Beier, Felix	Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements
Belanche Guadas, Manuel	Influence of doping on heavy-ion induced color centers in 4H-SiC Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes Optical characterization of heavy-ion induced damage in 4H-SiC Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap Defect formation by irradiation with thermal and fast neutrons in SiC Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
Bell, Martin	Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers
Bellocch, G.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Bellocchi, Gabriele	Anodic Oxidation of 4H-Silicon Carbide Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Impact of Predefined Defects on Device Reliability ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES.
Bellocchi, Gabriele	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Benjamin, Mark	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Bensouiah, Djamel	2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Bentivegna, Nella	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis
Bera, Lakshmi Kanta	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Bertoni, Mariana	Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse
Bertrand, Bellaton	Impact of Predefined Defects on Device Reliability
Berwian, Patrick	A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin Qubits
Berwian, Patrick	Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks
Bian, Guodong	Theory of optical spin-polarization and related ODMR contrast optimization strategy for an axial divacancy center in 4H-SiC
Bianchi, Andrea	Reliability Analysis and Test Results of SiC Baseless Power Module in bidirectional EV-Charging application
Binder, Andrew	Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Biró, Szilvia	Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique
Biscarrat, J.	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Biscarrat, Jérôme	Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes Development of advanced Ni/4H-SiC contact modules by using laser annealing Self-Heating Calibration in SiC Power Diodes Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Biswas, Ayan	Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening
Bittner, Josua	Reducing metal delamination in SiC devices by carbon removal
Bizen, Daisuke	Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope
Bjørn Jørgensen, Asger	Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
Black, Taylor	Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse
Boccarossa, Marco	Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability
Bogdanov, Maxim	Effect of Crucible and Thermal Insulation Porosity on Growth Rate and Nitrogen Incorporation in PVT SiC Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals
Boksteen, Boni	High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Bolat, Sami	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Boldrini, Virginia	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Bolotnikov, Alexander	(Invited) SiC JFETs: Pushing Performance Boundaries or Re-inventing the Wheel?
Bolshukhin, Denis	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Bombaci, Matteo	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth
Bonforte, Stefano	Impact of Predefined Defects on Device Reliability
Bongiorno, C.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Bongiorno, Corrado	Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC
Bongiorno, Corrado	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Borca-Tasciuc, Giorgian	An Improved Analytical Model for SiC P-i-N Diode Reverse Recovery Demonstration of Hybrid-Bonded, Single-Chip 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
Borghese, Alessandro	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance
Borucki, Leonard	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Boscaglia, M.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Boscaglia, Massimo	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Bottari, Cettina	Challenges in 1SSF detection in 4H-SiC epilayer and related failure
Boucart, Katherine	High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs
Bouch, Campbell	Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Boulogiannis, Grigorios	Key Mechanisms of Laser-Based Splitting and Dicing of 4H-SiC Wafers
Bozóki, Zoltán	Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique
Brandl, Anja Katerina	Dynamic Current-Voltage Behavior of SiC Power MOSFETs Comparison of Ramp- and ac-based C-V Methods for Characterization of SiC Power MOSFETs SiC Power MOSFET Design for Mitigation of Oscillations in Multi-Chip Power Modules
Bredol, Philipp	Tunable, highest-quality factor mechanical oscillators for quantum technology
Breglio, Giovanni	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance
Breuer, Jakob	Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of cryogenic temperatures
Brezeanu, Gheorghe	Wide temperature range analysis of ITO/4H-SiC Schottky diodes with applications in UV photodetection
Briccetti, Hunter	6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT
Briggs, Benjamin	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Briot, Olivier	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Brunko, Alexander	Impact of Transient Surge Current Pulses on Bipolar Degradation in SiC Power MOSFETs
Buitrago, Elizabeth	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Buompane, Raffaele	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Burk, Albert	Silicon Carbide Epitaxial Defect and Substrate Defects Analysis by Dynamic Photoluminescence and X-ray Topography Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
Bytheway, Richard	Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach
Byun, Dongwook	Improved Silicide Formation in Vertical 4H-SiC JFET via Double Spacer Process
Bär, Eberhard	A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin Qubits
C
Calabretta, Cristiano	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure Impact of Predefined Defects on Device Reliability Micropipes in SiC die Observed by Molten KOH Etching Advanced defects study and monitoring in new generation 4H-SiC devices
Calabretta, Cristiano	Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates
Calabretta, Michele	ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES.
Calcagno, Lucia	Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector
Calcagno, Lucia	Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector
Cambre, Sofie	Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC MOSFETs
Canino, Marica	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Cannizzaro, Annalisa	Advanced defects study and monitoring in new generation 4H-SiC devices
Cao, Lei	Silicon Carbide Radiation Sensor under High Temperature and Defects Analysis with ODMR
Cao, Qinze	Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET
Capasso, Giuseppe	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances
Capile, John Angelo	Effects of Rotational Stacking Faults in Electronic Structure of 4H-SiC Monolayer under Electric Field Stress: A DFT-Based Molecular Dynamics Study
Carbone, Beatrice	Challenges in 1SSF detection in 4H-SiC epilayer and related failure
Carboni, Stefano	Reliability Analysis and Test Results of SiC Baseless Power Module in bidirectional EV-Charging application
Carrano, Vincenzo	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Casali, Nicola	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Cautiero, Giuseppe	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors
Ceccarelli, Edoardo	High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Ceccarelli, Edoardo	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Cela, Enrica	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Cernansky, Robert	High-resolution nanoscale AC quantum sensing in SiC
Cha, Ho-Young	Excellent Temperature Stability of Al₀.₈₅Ga₀.₁₅N/Al₀.₅Ga₀.₅N HEMT Ohmic p-GaN Gate HEMTs with Al₂O₃/SiO₂ T-gate Dual Insulator Layers
Chae, Jeong Eun	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Chan, Wing-Chor	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chand, Umesh	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Chang, Carl	Modeling and Experimental Evaluation Comparing Normal to c-plane Stress-Strain of Two-Step ICP Etched Microstructures.
Chang, Chao-Yi	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chang, Cheng-Shu	Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs
Chang, Ting-Fu	An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR)
Chao, Der-Sheng	Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs
Chao, Gao	(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development Development of High-quality 6-inch P-type 4H-SiC Substrates Using Solution Growth
Chapelle, Audrey	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Charles, William	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Chaussende, Didier	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process Epitaxial growth of 3C-SiC and 4H-SiC by travelling solvent method under isothermal conditions Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth New insights on nitrogen doping of polycrystalline SiC fabricated by CVD
Chaussende, Didier	(Invited) Stabilizing the Growth Interface in Solution Growth : Application of SiC-Saturated Conditions and Convection Control
Chavda, Rahul-Vijaybhai	Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling Test Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with measurements and simulations
Che, Linlin	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers
Chehadi, Zeinab	Development of advanced Ni/4H-SiC contact modules by using laser annealing
Chen, Bo-Rong	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chen, Bob Wei-Ming	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chen, Chao-Chang Arthur	Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer
Chen, Chuan-Han	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs
Chen, Chun-Ming	Silicon Carbide Wafering
Chen, Daixin	Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Chen, Gang	Fabrication of a 1200V SiC Trench MOSFET with an Inverted T-shaped Deep P Junction Based on an 8-inch Platform
Chen, Han-Wei	A Study on Simplifying the Process by Using Multiple Epitaxy and Implantation Method to fabricate SiC Super Junction
Chen, Hua Mao	Impact of cell design on switching performance of 1.7kVSiC VDMOSFET
Chen, Kevin.J	Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition
Chen, Ko-Chung	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chen, Kuan-Jung	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chen, Min-Cheng	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chen, Penglei	Development of High-quality 6-inch P-type 4H-SiC Substrates Using Solution Growth
Chen, Qiu	Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers
Chen, Qiu	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC
Chen, Xiufang	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates
Chen, Xiufang	Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography
Chen, Yahui	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation
Chen, Yan-Ru	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chen, Yu Jen	Impact of cell design on switching performance of 1.7kVSiC VDMOSFET
Chen, Yuzhong	Non-Destructive Optical Detection of Dislocation Defects in N-type SiC Substrate Wafers
Chen, Z.	(Invited) The mechanisms of Defect Replication, Propagation, Modification, Nucleation and Multiplication in 4H-SiC PVT-grown Substrates and CVD-grown Homo-epitaxial Layers
Chen, Zeyu	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step Dynamics Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Chen, Zhong	Temperature-Dependent TLM-Based Resistance Modeling for 4H-SiC CMOS
Chen, Zhongyuan	Effect of Dynamic Reverse Bias on the Blocking Capability of SiC MOSFETs under Development
Cheng, Chiao-Yang	A Study on Simplifying the Process by Using Multiple Epitaxy and Implantation Method to fabricate SiC Super Junction Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor
Cheng, Lin	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates
Cheng, Po-Yu	Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs
Chi, Xilun	Physical Origin of Crystal Face-Dependent Electron Mobility in 4H-SiC (0001) and (11-20) MOSFETs
Chiang, Kuang-Hao	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chibbaro, Claudio	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Chien, Yu-Chieh	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Chiu, Yu-Lien	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Cho, Hanchul	Two-Step Electrochemical Mechanical Polishing of Silicon Carbide : Decoupled Anodic Oxidation and CMP for Enhanced Removal Efficiency
Cho, Myongsoo	Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding
Cho, Yigil	A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-based Devices
Cho, Young-Hun	Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs
Choi, Eun-Suck	Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface
Choi, Hyoung-Seuk	Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT method
Choi, Ji-Soo	Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε
Choi, Jin-Woo	Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes
Choi, Jinwoo	Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε
Choi, Jun Jae	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide Simulation Framework for Quantum Control Protocols in Spin-3/2 Silicon Vacancies of 4H-SiC
Choi, Jung Woo	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal Two-Step Electrochemical Mechanical Polishing of Silicon Carbide : Decoupled Anodic Oxidation and CMP for Enhanced Removal Efficiency
Choi, Kyeong-Keun	A study of optical emission spectroscopy (OES) for high selective-etching in E-mode HEMT process Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Choi, Mee-Hi	Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method
Choi, Na-Yeon	Comparative Numerical Analysis of Cu Clip and Al Wire Bonding Structures in SiC Schottky Barrier Diodes
Choi, Sam-Jong	A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-based Devices
Choi, Seoeun	Impact of Socket and Current Shunt on Switching Characteristics of GaN HEMTs
Choi, Seungjai	Fast Speed SiC IPM Module with Zero Voltage Gate Driving Utilizing Active Miller Clamp Function on Drive IC
Choi, Sumi	The effect of the vertical ultrasonic vibration on the blade dicing of the SiC wafer
Choi, Wonsuk	Novel 1.2kV SiC MOSFET with New Top-side Cooling Package for Automotive Applications
Choong, Gregory	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Chou, Chun-Yuan	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Chow, Tat-Sing Paul	An Improved Analytical Model for SiC P-i-N Diode Reverse Recovery Demonstration of Hybrid-Bonded, Single-Chip 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
Chu, Jui-Chi	Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET
Chuang, Chiao-Shun	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example
Chudzik, Michael	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Chung, Jason	The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Chung, Seung-Hwan	Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε
Chung, Surasit	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Chèze, Caroline	SiC bulk inspection: digital defect traceability from puck to epi-ready wafers
Clair, Maurice	Reducing metal delamination in SiC devices by carbon removal
Clark, David	Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers 2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Clausner, Sven	Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
Clowes, Steven K.	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Cochrane, Corey	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Cockburn, Andrew	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors
Coco, Michael G.	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Colston, G.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Colston, Gerard	Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy
Contreras, Sylvie	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Contri, Boris	Epitaxial growth of 3C-SiC and 4H-SiC by travelling solvent method under isothermal conditions
Cooper, James	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Coppola, Mario	Advanced defects study and monitoring in new generation 4H-SiC devices
Coq Germanicus, Rosine	DC and RF local electrical properties of macrostepped 4H-SiC surface probed by AFM-SSRM and AFM-sMIM modes
Cordier, Yvon	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Cosentino, Salvatore	A study on different SiC MOSFET Edge Termination Ruggedness
Cosentino, Salvo	Anodic Oxidation of 4H-Silicon Carbide THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES. ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES.
Costantino, Debora	Impact of Predefined Defects on Device Reliability
Crnjac, Andreo	Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector
Crupi, Isodiana	Anodic Oxidation of 4H-Silicon Carbide
Csato, Constantin	Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
Cui, Jingjing	Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction Study
Cui, Peng	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes
Cui, Yingxin	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Curgali, Martin	Application of spectroscopic ellipsometry in silicon carbide technology
Currier, Ian	SiC Single Wafer Chemical Mechanical Polishing Process Improvements for Throughput and Surface Finish
D
Da, Huo	Study of SiC Thyristors with Integrated Temperature Sensors
Daliento, Santolo	Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance
Damcevska, Jenny	Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Dang, Yifan	Development of High-quality 6-inch P-type 4H-SiC Substrates Using Solution Growth
Dansako, Daichi	Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity
Dansas, Hugo	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Darrigo, Giuseppe	Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering Impact of Predefined Defects on Device Reliability
Das, Antariksha	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Das, D.	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Das, Dhruba	Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Das, Suman	TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall measurements Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold Measurements
Dasari, Durga	PL6 centers in 4H-SiC for spin-based quantum sensing
Date, Lucien	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
David, Felix	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide Tunable, highest-quality factor mechanical oscillators for quantum technology
Davidovskaya, Klavdia	Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.
Davidson-Marquis, Flavie	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Davrieux, Thibaud	Low defectivity epilayers grown on SmartSiC™ engineered substrates
de Jong, Tijmen	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
De Luca, Saverio	Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current
De Michielis, Luca	High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs
De Santi, Carlo	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress
Deboer, Skylar	'Ladder' design for improved static electrical characteristics for 1.2kV 4H-SiC MOSFET with deep P-well Impact of Active Cell Geometry on the Static Performance of 10kV 4H-SiC JBS (Junction Barrier Schottky) Diodes Design optimization of 600V 4H-SiC Lateral Bi-directional MOSFET (L-BiD-MOSFET) with 3D TCAD simulation Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs
Delahaye, Franck	Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Demiralp, Berke	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide
DeRosa, Peter	Path for superjunction industrialization by single step high energy channeling implant
Dhanaraj, Govindhan	Quality Improvement in 200mm Silicon Carbide Substrate
Di Bari, Ivana	Impact of Predefined Defects on Device Reliability
Di Benedetto, Luigi	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Characterization of 4H-SiC lateral MOSFETs up to 773K
Di Capua, Roberto	Optical characterization of heavy-ion induced damage in 4H-SiC
Di Franco, Salvatore	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Dick, Jan Frederik	The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics 4H-SiC Tunneling Light Emitter as a Light-Source for Monolithically Integrated Off-Resonant Excitation of Silicon Vacancies Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters
Dikó, Boglárka	Optical Critical Dimension Metrology for the SiC Trench MOSFET Process
Dimitrijev, Sima	Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Dixit, Hemant	TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs
Do, Kyoung-Il	A Novel Structure Design of SiC-based SCR Structure with High Holding Voltage Using Segment Topology for High Voltage ESD Protection
Dojima, Daichi	Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Dojima, Daichi	Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping
Dolci, Maicol	High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs
Domenico, Mello	Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering
Donato, Nazareno	Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Dong, Lin	Investigation of Mechanical Stress and Warpage in 200mm Silicon Carbide Wafers: Implications for Production Scalability
Dou, Charles	Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC
Dr. Forsberg, Urban	Carbide coated graphite with enhanced mechanical and chemical properties for SiC crystal growth
Dr. Huang, Jing-Jia	Carbide coated graphite with enhanced mechanical and chemical properties for SiC crystal growth
Dr. Pedersen, Henrik	Carbide coated graphite with enhanced mechanical and chemical properties for SiC crystal growth
Dr. Thielemann, Christian	Carbide coated graphite with enhanced mechanical and chemical properties for SiC crystal growth
Dr. Wijayawardhana, Charles	Carbide coated graphite with enhanced mechanical and chemical properties for SiC crystal growth
Draskovic, Thomas	Optimizing Diamond Slurry Parameters for Polishing SiC Wafers
Dresel, Fabian	Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of cryogenic temperatures Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Drouin, Alexis	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Drury, Ryan	Influence of doping on heavy-ion induced color centers in 4H-SiC Optical characterization of heavy-ion induced damage in 4H-SiC
Du, Fengyu	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation
Du, Fengyu	Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar
Du, Yangming	Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition
Dubois, Marie	New insights on nitrogen doping of polycrystalline SiC fabricated by CVD
Dudley, Michael	Atomistic simulations of SiC crystal growth phenomena Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step Dynamics (Invited) The mechanisms of Defect Replication, Propagation, Modification, Nucleation and Multiplication in 4H-SiC PVT-grown Substrates and CVD-grown Homo-epitaxial Layers Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Development of High Energy Channeling Implantation Process for SiC Superjunction Devices Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Dukes, Douglas	6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT High Quality P-type 4H-SiC Growth by PVT Method
Dumm, Timothy	Optimizing Diamond Slurry Parameters for Polishing SiC Wafers
Dunger, Thoralf	Reducing metal delamination in SiC devices by carbon removal
Durkó, Zsolt	Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique
Dutta, Tapas	2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
E
Eckardt, Bernd	Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of cryogenic temperatures Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Edwige, Bano	Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes
Ehrensberger, Kevin	Reduction of Sidewall Roughness in SiC Trench Formation by Improvement of Photoresist Mask
El Alouani, Ahmed	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
El Bakali, Abdelmagid	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process
Ellebrecht, Imme	Reducing metal delamination in SiC devices by carbon removal
Enami, Shuta	Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single Crystals
Endo, Koichi	Multi-channel defect inspection for 4H-SiC epitaxial wafer and integrated defect classification Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation Modeling
Engler, Wyatt	Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Enjoji, Yuya	Mechanism of Threshold Voltage Drift in SiC MOSFETs under Bipolar AC Gate Stress via Photon-Assisted Electron Injection
Erlbacher, Tobias	Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress measurement Extraction of trench sidewall capacitance by linear component separation towards wafer level evaluation Impact of Transient Surge Current Pulses on Bipolar Degradation in SiC Power MOSFETs Optical localization of passivation discoloration using admittance spectroscopy Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC Dynamic conduction behavior of SiC-Mosfets in the subthreshold regime and the impact of deep oxide traps to the channel depletion
Erlebach, Axel	Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD
Erlekampf, Jürgen	growth and characterization of “IsoPure” epitaxial layers for quantum applications
Ernst, Roland	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process
Errando Herranz, Carlos	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Eserin, Samuel C.	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Estiri, Arash	Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers
Eto, Kazuma	Influence of interfacial pores between seed/graphite holder interface on thermal field in 4H-SiC crystals grown by physical vapor transport
Eto, Kazuma	(Invited) Stabilizing the Growth Interface in Solution Growth : Application of SiC-Saturated Conditions and Convection Control
Etzemüller Bathen, Marianne	Optical characterization of doping-induced defects in n-type 4H-SiC Electrical identification of color centers in 6H silicon carbide using a comparative study of deep level transient spectroscopy and density functional theory The impact of NO annealing on the p-type SiC/SiO₂ interface: A LE- μSR study
Eun, Tai Hee	The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Evanschitzky, Peter	Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks
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Faisal, Firas	Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress measurement Impact of Transient Surge Current Pulses on Bipolar Degradation in SiC Power MOSFETs A Comprehensive Study of Buffer Layer Thickness and Doping Effects on SiC Defect Density Comprehensive Analysis of Carrier Lifetime and Deep-Level Traps in 4H-SiC: Impact of Epitaxial Growth Temperature and Rate Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC
Falise, Frédéric	SiC bulk inspection: digital defect traceability from puck to epi-ready wafers
Fan, Haoyu	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers
Fan, Xiangrui	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Farnbacher, Lukas R.	Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of cryogenic temperatures
Fehr, David	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Feije, Laurens J.	Towards High-Fidelity Quantum Gates for the V2 Defect in 4H-SiC Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Feiler, Wolfgang	Fowler-Nordheim current at negative gate bias in SiC MOSFETs
Felaco, Gabriele	Influence of doping on heavy-ion induced color centers in 4H-SiC Optical characterization of heavy-ion induced damage in 4H-SiC
Feng, Ang	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress
Feng, Gan	Formation and reduction of surface pits on 4H-SiC epitaxial layer Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers
Feng, Sirui	Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET
Fernandez, Stéphanie	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Ferro, Gabriel	DC and RF local electrical properties of macrostepped 4H-SiC surface probed by AFM-SSRM and AFM-sMIM modes
Fidler, Tamara	Impact of ambient conditions on oxide thickness distribution on 4H-SiC in thermal oxidation furnace Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Fieweger, Connor	All-electrical quantum magnetometry based on commercially off-the-shelf SiC devices
Fink, Tobias	Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
Fiorenza, P.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Fiorenza, Patrick	Challenges in 1SSF detection in 4H-SiC epilayer and related failure Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs Simultaneous p- and n-type doping carrier profiling of 4H-SiC MOSFETs by Scanning Microwave Impedance Microscopy Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Fisher, Paul	High-resolution nanoscale AC quantum sensing in SiC
Flandre, Denis	Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Flatté, Michael	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Flicker, Jack	Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Floros, Konstantinos	Discrepancy of Datasheet Measurements in SiC MOSFETs in Bare Dies and TO-247 Packaged Discrete Devices
Floyd, Richard	Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Fodor, Balint	Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry
Fontana, Enzo	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure
Fordos, Tibor	Application of spectroscopic ellipsometry in silicon carbide technology
Formicola, Alba	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Foster, Linsea	Graphite – The Hot Zone Hero
Fox, Oliver	Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach
Franco, S. Di	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Franzo', Giorgia	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Frascaroli, Jacopo	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Frey, Samuel	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Fu, Zhenxing	Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates
Fuchs, Alesa	Reduction of Sidewall Roughness in SiC Trench Formation by Improvement of Photoresist Mask Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC
Fuchs, Alexander	Tunable, highest-quality factor mechanical oscillators for quantum technology
Fuhrmann, Jens	High-resolution nanoscale AC quantum sensing in SiC
Fujie, Fumihiro	Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers Modeling of forward current conduction in 4H-SiC PiN diodes
Fujihisa, Zenji	Evaluation of transmission spectra of vanadium-doped 4H-SiC substrates by optical transmittance measurement
Fujii, Hideo	Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD measurement
Fujiki, Shota	Photoluminescence study on micropipes in SiC substrates for improving comprehensive full-wafer defect detection accuracy
Fujimoto, Hiroki	Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface nitridation Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H₂/Ar annealing process
Fujioka, Daichi	Temperature dependence of high-field electron and hole drift velocities in 4H-SiC
Fujita, Jun	Characterization of 3C-SiC thick epitaxial layers grown on off- and on-axis 4H-SiC substrate
Fujiwara, Hirokazu	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Fujiwara, Taizo	Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping
Fukasaku, Kosei	In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property Analyses
Fukui, Hiroshi	Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Fukuzawa, Takahito	Investigation on thermal stability for Silicon-cap-annealed Ohmic Contact on n-type 4H-SiC
Furukawa, Akihiko	Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques Impacts of wafer thinning process using laser slice technique on device characteristics
Furusho, Tomoaki	Insights from 3D Modeling of SiC Solution Growth: Realization of Unidirectional Solution Flow and High Growth Rate by Asymmetric Hot-zone Designs
Förthner, Julietta	A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin Qubits
Für, Natalija	Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap Defect formation by irradiation with thermal and fast neutrons in SiC Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD
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Gajewski, Donald	Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening
Gakas, Michail	High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs
Galeckas, Augustinas	Optical characterization of doping-induced defects in n-type 4H-SiC
Gali, Adam	Solid state defect emitters with no electrical activity in 4H-SiC
Gallagher, J. C.	(Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers
Gallagher, James	Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction
Gallagher, James	Rapid Wafer-Scale Evaluation of Defects in SiC Using Deep Learning
Gallo, Erik	Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector
Gallou, Yann	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process New insights on nitrogen doping of polycrystalline SiC fabricated by CVD
Gallou, Yann	Epitaxial growth of 3C-SiC and 4H-SiC by travelling solvent method under isothermal conditions
Galyukov, Alex	Effect of Crucible and Thermal Insulation Porosity on Growth Rate and Nitrogen Incorporation in PVT SiC Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals
Gammon, P. M.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Gammon, Peter	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates Trench Superjunction (SJ) Platform Technology for SiC Power Devices On the process optimization of ALD-deposition of SiO₂ for SiC MOS processes Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer etching A low inductance SiC MOSFET power module packaging design with PCB shielding layer Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach Optimization of a 1200V SiC lateral SiC Schottky diode UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Gann, Katie	Development of High Energy Channeling Implantation Process for SiC Superjunction Devices
Gao, Jiaxu	Strain Evolution and Formation of Interfacial Dislocations in Ion-Implanted 4H-SiC Epilayers during Activation Annealing
Gao, Weibo	High-resolution nanoscale AC quantum sensing in SiC
Gao, Yupeng	Successful Development of 12 inch SiC crystal by PVT method
Garofalo, Angela	Simulation of highly sensitive 3C-SiC strain sensor
Gaumer, Clément	SiC engineered substrate versatility demonstration versus industry requirement
Gay, Xavier	Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Ge, Lei	Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes
Geburt, Sebastian	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Gejo, Kota	Modeling of the Physical Properties of 3C-SiC/4H-SiC Heterostructures for TCAD Simulation
Gelineau, G.	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Gelineau, Guillaume	Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Gelnarova, Zuzana	Application of spectroscopic ellipsometry in silicon carbide technology
Gergaud, Patrice	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Gersappe, Dilip	Atomistic simulations of SiC crystal growth phenomena Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step Dynamics
Ghandi, Reza	Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
Ghandi, Reza	Development of High Energy Channeling Implantation Process for SiC Superjunction Devices
Ghezellou, M.	(Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers
Ghezellou, Misagh	Investigating the temperature dependence of charge carrier lifetime in low-doped n-type 4H-SiC Electrical identification of color centers in 6H silicon carbide using a comparative study of deep level transient spectroscopy and density functional theory Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways
Ghosal, Sanghamitra	Reducing metal delamination in SiC devices by carbon removal
Gialanella, Lucio	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Giannazzo, F.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Giannazzo, Filippo	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs Simultaneous p- and n-type doping carrier profiling of 4H-SiC MOSFETs by Scanning Microwave Impedance Microscopy Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Girod, Lucile	New insights on nitrogen doping of polycrystalline SiC fabricated by CVD
Giuffrida, Federico	Advanced defects study and monitoring in new generation 4H-SiC devices
Givens, John	SiC Single Wafer Chemical Mechanical Polishing Process Improvements for Throughput and Surface Finish
Gloth, Marvin	Optical localization of passivation discoloration using admittance spectroscopy Dynamic conduction behavior of SiC-Mosfets in the subthreshold regime and the impact of deep oxide traps to the channel depletion
Gobert, Christian	growth and characterization of “IsoPure” epitaxial layers for quantum applications Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks
Godignon, P.	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Goller, Maximilian	Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling Test
Goncalves de Medeiros, Helton	Influence of doping on heavy-ion induced color centers in 4H-SiC Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes Optical characterization of heavy-ion induced damage in 4H-SiC The impact of NO annealing on the p-type SiC/SiO₂ interface: A LE- μSR study Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap Defect formation by irradiation with thermal and fast neutrons in SiC Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD
Gong, Xiao	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Gonzaga, Thomas	Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face
Gonzalez, Jose Ortiz	Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET
Goovaerts, Etienne	Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC MOSFETs
Gossman, Robert	Development of High Energy Channeling Implantation Process for SiC Superjunction Devices
Gott, James	Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET
Gottfried, Knut	Reducing metal delamination in SiC devices by carbon removal
Graham, Andrew	Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance
Grazzi, Cristina	Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth Machine
Greco, G.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Greco, Giuseppe	Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Greulich-Weber, Siegmind	Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals
Griffin, Nicholas	6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT
Grossner, Ulrike	Influence of doping on heavy-ion induced color centers in 4H-SiC Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes Optical characterization of heavy-ion induced damage in 4H-SiC Dynamic Current-Voltage Behavior of SiC Power MOSFETs Optical characterization of doping-induced defects in n-type 4H-SiC The impact of NO annealing on the p-type SiC/SiO₂ interface: A LE- μSR study (Invited) The Role of Point Defects in Performance and Reliability: From Material and Device to Application Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap Defect formation by irradiation with thermal and fast neutrons in SiC Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC Comparison of Ramp- and ac-based C-V Methods for Characterization of SiC Power MOSFETs SiC Power MOSFET Design for Mitigation of Oscillations in Multi-Chip Power Modules
Grover, R.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Gruber, Christian Stefan	Time-resolved Electron Beam Induced Current (TR-EBIC): A high potential method to map minority charge carrier lifetime in SiC
Guan, Hao	Low-damage laser slicing technology for bulk GaN
Guarnera, Alfio	A study on different SiC MOSFET Edge Termination Ruggedness Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Guerber, Sylvain	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Guerrera, Alfredo Walter Mario	Simulating Short Circuit events on SiC MOSFET devices A study on different SiC MOSFET Edge Termination Ruggedness
Guerrera, Alfredo Walter Mario	THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.
Guimera Coll, Pablo	Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse
Guiot, Eric	SiC engineered substrate versatility demonstration versus industry requirement SmartSiC™ engineered substrate: a robust solution to SiC power devices bipolar degradation Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Gunn, Robert	Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance
Guo, Dengyao	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation
Guo, Jingkai	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation
Guo, Yu	High Quality 8-inch 4H-SiC Epitaxial Products
Gupta, Gaurav	Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Gutierrez, Liliana	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Gye, Yeon-Je	Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning
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Ha, Jiheon	Highly Stable Thin Film Transistors Based on Exfoliated β-Ga₂O₃ via RTP Annealing
Haasmann, Daniel	Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Habenicht, Sonke	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Hachiken, Keiji	Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface nitridation Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H₂/Ar annealing process
Hachimata, Katsuki	5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors
Halagacka, Lukas	Application of spectroscopic ellipsometry in silicon carbide technology
Hallén, Anders	Investigating the temperature dependence of charge carrier lifetime in low-doped n-type 4H-SiC Depth profiling of boron-related minority traps in n-type 4H-SiC by junction DLTS measurements
Halmer, David	Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
Halty, Sébastien	Development of advanced Ni/4H-SiC contact modules by using laser annealing
Hamano, Kenichi	Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques Impacts of wafer thinning process using laser slice technique on device characteristics
Hamid, Rahim	Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Hammer, René	Modeling SiC crystal growth and crucible etching in the PVT furnace Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth
Han, Chao	Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar
Han, Jisheng	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Han, Keeyun	Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
Han, Sung-Woong	Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea
Han, Wenhao	Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates
Han, Xuefeng	Growth and analysis of low resistivity polycrystalline silicon carbide using physical vapor transport Numerical Modeling of Impurities and Defects in 4H-SiC Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Hanafusa, Hiroaki	Investigation on thermal stability for Silicon-cap-annealed Ohmic Contact on n-type 4H-SiC
Hanawa, Masafumi	Pulsed optically detected magnetic resonance of silicon vacancies in SiC
Hanf, Michael	Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
Hang, Yong	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Hanser, Drew	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Hao, Xiaopeng	Growth of 8 inches SiC single crystal with low BPDs defect
Hara, Masahiro	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface nitridation Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H₂/Ar annealing process
Hara, Satoshi	Optimization of DIW brush cleaning technology using spin scrubber in SiC device manufacturing process
Harada, S.	(Invited) Point defect engineering in SiC to realize highly reliable power devices
Harada, Shinsuke	Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates Body diode reliability and reverse recovery characteristics of short tapered SJ-MOSFET fabricated by MeV Al ion implantation Influence of HCl on doping uniformity of 4H-SiC SJ structure Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Harada, Shunta	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography
Harada, Shunta	Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation Suppression of stacking faults expansion by backside proton implantation into SiC substrates
Harmon, Nicholas	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Harvey, Chandler	6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT
Hasegawa, Masakatsu	An In-Situ Study of Al Effects on Step Structures under Diffusion Controlled 4H-SiC Solution Growth
Hasegawa, Masaki	Multi-channel defect inspection for 4H-SiC epitaxial wafer and integrated defect classification
Hasegawa, Takuhiro	Polytype analysis of 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates by Raman spectroscopy
Hashimoto, Ryunosuke	An In-Situ Study of Al Effects on Step Structures under Diffusion Controlled 4H-SiC Solution Growth
Hassanbee, Z.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Hassanbee, Zareena	EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC surfaces
Hassant, Cyril	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process
Hasuike, Noriyuki	Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope
Hata, Yusuke	High temperature operating characteristics of 4H-SiC Active Pixel Sensors
Hatakeyama, Tetsuo	Modeling of the Physical Properties of 3C-SiC/4H-SiC Heterostructures for TCAD Simulation
Hayashi, Kazushi	Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD measurement
Hayashi, Shohei	Atom Probe Tomography for Highly Implanted Phosphorus Ion in Silicon Carbide Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope
Haylock, Benjamin	High-resolution nanoscale AC quantum sensing in SiC
Hayyak, Raouf	Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy
He, Ken	Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results
He, Shengping	Growth Simulation and Composition Control of SiC Crystal
He, Zhaowen	Demonstration of Hybrid-Bonded, Single-Chip 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
Heiler, Jonah	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Helmreich, Ben	Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding
Herms, Martin	Characterization of Stress and Defects in 4H Silicon Carbide Wafers by Scanning Infrared Depolarization
Hesselmeier-Hüttman, Erik	Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent control
Heyers, Klaus	Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process
Higashi, Seiichiro	Investigation on thermal stability for Silicon-cap-annealed Ohmic Contact on n-type 4H-SiC
Higashi, Shunto	4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications
Higashi, Yuta	Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates
Hillard, Robert J.	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Hiramastu, Kana	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Hiramoto, Shion	10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes
Hirano, Shunya	BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser
Hirano, Takayuki	Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD measurement
Hirose, Ryuya	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Hisamoto, Digh	FinFET Effect of Vertical-channel Fin-SiC MOSFET
Hitchcock, Collin	Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
Ho, Chiahua	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Hobart, Karl	Rapid Wafer-Scale Evaluation of Defects in SiC Using Deep Learning
Hochreiter, André	Fabrication of ultrathin freestanding 4H-SiC layers by doping-dependent monolithic electrochemical etching Tunable, highest-quality factor mechanical oscillators for quantum technology
Hoegen, M.	(Invited) A SiC-based Desktop Quantum Computer
Hoegen, Michael	A SiC-based Desktop Quantum Computer
Hoffmann, Felix	A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages
Hoglund, Johnny	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Hollmann, Kévin	Self-Heating Calibration in SiC Power Diodes
Holt, Joshua	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Holub, Georg	Atomistic simulations of SiC crystal growth phenomena
Hong, Chan-Ho	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Hong, Jeongsoo	Ag:AZO Electrodes Deposited by Co-sputtering Using FTS to Improve Photodetector Performance
Hong, Soon-Ku	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Hong, Steven	Unlocking New Possibilities: Power Devices and the Future of Semiconductors
Horvath, Peter	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Hoshida, Hirofumi	Photoluminescence study on micropipes in SiC substrates for improving comprehensive full-wafer defect detection accuracy
Hosoi, Takuji	SiO₂/SiC Interface Engineering via Low-temperature NO Oxynitridation of SiC Surface Feasible with Si Device Fabrication Equipment
Hossain, Rumana	Where light ends, energy begins: Transformation of waste bulbs enclosures into multiphasic silicon carbide for Lithium-ion battery
Hou, Pengxiang	Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers
Hrunski, Fedor	Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi
Hsiao, Yikai	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration
Hsu, Chih-Hsiang	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example
Hsu, Fu-Jen	An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR)
Hu, Bao	Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction Study
Hu, Haixiao	Growth of 8 inches SiC single crystal with low BPDs defect
Hu, Jia-Wei	Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR)
Hu, S.	(Invited) The mechanisms of Defect Replication, Propagation, Modification, Nucleation and Multiplication in 4H-SiC PVT-grown Substrates and CVD-grown Homo-epitaxial Layers
Hu, Shanshan	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Hu, Xiaobo	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography
Hu, Xiaobo	Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates
Hu, Yihong	Towards High-Fidelity Quantum Gates for the V2 Defect in 4H-SiC
Huang, Alex	Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
Huang, Bing	Solid state defect emitters with no electrical activity in 4H-SiC
Huang, Chih-Fang	Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR)
Huang, Feihong	Formation and reduction of surface pits on 4H-SiC epitaxial layer Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers
Huang, Shao-Yuan	Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer
Huang, Shi-Cheng	Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor
Huang, Shyh-Jer	Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor
Huang, Yen-Cheng	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Huet, S.	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Huet, Stéphanie	Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Huh, Yoon-Young	Investigation of phase transition and its impact on the crystal structure and material properties of polycrystalline α/β Ga₂O₃ thin film
Hull, Brett	Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening
Hung, Chialung	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration
Hung, Hsiang-Ting	An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR)
Hwang, Seung-Jae	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide Simulation Framework for Quantum Control Protocols in Spin-3/2 Silicon Vacancies of 4H-SiC
Häublein, Volker	Evaluation of oxide processing steps using contactless corona-based CV measurements
I
Iannuzzo, Francesco	High-Density Packaging Approaches for SiC Power MOSFET Modules
Ichimura, Masaya	Investigation of phase transition and its impact on the crystal structure and material properties of polycrystalline α/β Ga₂O₃ thin film
Iden, Shunto	Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Time Dependence of Processed Groove Profile –
Igarashi, Yasuyuki	Quantitative Simulation of Bipolar Degradation in 4H-SiC Using UV Pulsed Laser: Considerations on the Critical Duration of Threshold Minority Carrier Density Adverse effects of proton implantation in 4H-SiC epilayers on stacking fault expansion Application of UV photoluminescence spectrum mapping for stacking faults that were expanded from the in-grown stacking fault on a thick 4H-SiC epilayer
Iijima, Daichi	Possible interaction between basal plane dislocations and point defects in physical vapor transport grown 4H-SiC crystals
Iizasa, D.	(Invited) Comprehensive Study on Theoretical Performance Limit of 4H-SiC Full- and Semi-Superjunction Structures
Iizasa, Daisuke	Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar engineering
Ilves, Kalle	Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
Im, Youngbin	Improved Silicide Formation in Vertical 4H-SiC JFET via Double Spacer Process
Imhof, Alecsander	Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction
Inayoshi, Haruko	Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch Processing Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Ingenito, Andrea	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Inoue, Dai	Evaluation of transmission spectra of vanadium-doped 4H-SiC substrates by optical transmittance measurement
Iosifidis, Nikolaos	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates A low inductance SiC MOSFET power module packaging design with PCB shielding layer Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers
Iosifidis, Nikolaos	Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET
Iosifidis, Nikolaos	Trench Superjunction (SJ) Platform Technology for SiC Power Devices
Iqbal, Taswar	An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate
Irace, Andrea	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance
Ishibashi, Naoto	Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers Modeling of forward current conduction in 4H-SiC PiN diodes
Ishibashi, Naoto	Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers
Ishikawa, Ryoya	Temperature dependence of high-field electron and hole drift velocities in 4H-SiC
Ishikawa, Seiji	Surface Morphologies and Microstructure of Ni and Ni/Nb ohmic contacts on 4H-SiC
Ishikawa, Seiji	Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates
Islam, Naeem	Electrical Properties of 4H-SiC MOSFETs on Non-Polar Faces with Various Surface Treatments
Isshiki, Toshiyuki	Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope
Ito, Koji	Physical Origin of Crystal Face-Dependent Electron Mobility in 4H-SiC (0001) and (11-20) MOSFETs
Ito, Takahiro	Carrier lifetime in 4H-SiC substrates and relationship with device reliability
Ivanova, Tatiana	Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration
Iwai, Toshitatsu	Photoluminescence studies of defect formation during the seeding process of physical vapor transport growth of SiC
Iwamoto, Sosuke	Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit
Iwamuro, Noriyuki	Mechanism of Threshold Voltage Drift in SiC MOSFETs under Bipolar AC Gate Stress via Photon-Assisted Electron Injection
Iwanaga, Kazumasa	Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques Impacts of wafer thinning process using laser slice technique on device characteristics
Iwata, Manami	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Izumi, Satoshi	Excess Carrier-Induced Modulation of SiC Mechanical Properties: Insights from First-Principles Calculations
Izvarin, Ievgen	Graphite – The Hot Zone Hero
J
Jacobs, Alan	Development of High Energy Channeling Implantation Process for SiC Superjunction Devices
Jahdi, Saeed	High-Density Packaging Approaches for SiC Power MOSFET Modules Discrepancy of Datasheet Measurements in SiC MOSFETs in Bare Dies and TO-247 Packaged Discrete Devices
Jain, Shubhendra	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Jang, Donghyun	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Jang, Jaewon	Improvement of gate-source short failure by suppressing abnormal polySi layer in 1200V SiC MOSFETs
Jang, Jeong-Hwan	Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
Jang, Jung-Yan	Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face
Jang, Kiyoung	(Invited) Lifetime Assurance of Electric Vehicle SiC Power Modules through Thermal Model-Based Heat Management Strategy
Jang, Seung Yup	'Ladder' design for improved static electrical characteristics for 1.2kV 4H-SiC MOSFET with deep P-well Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration Design optimization of 600V 4H-SiC Lateral Bi-directional MOSFET (L-BiD-MOSFET) with 3D TCAD simulation Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs
Jang, Taehyun	Study on the Current Hump in SiC MOSFETs Induced by False Turn‑on of the High‑Side Body Diode
Janicsko-Csathy, Jozsef	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Jank, Michael	Extraction of trench sidewall capacitance by linear component separation towards wafer level evaluation Utilizing SiO₂ Reflow for Corner Rounding to Prevent Cracking in Passivation Layers Above 500 °C
Jayaprakash, Hitesh	Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
Jefferies, Richard	Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance
Jelezko, Fedor	High-resolution nanoscale AC quantum sensing in SiC
Jeon, Dae-woo	Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy
Jeon, Hunsoo	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Jeon, Jaejin	Reducing Parasitic Inductance Through Power Terminal Grouping in SiC Power Modules for EV Applications
Jeon, Jwa-Bin	Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor Devices. Ga₂O₃ film with ultrahigh breakdown field via novel aerosol deposition method
Jeong, Donghyeon	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Jeong, Seong-Min	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity
Jeong, Seong-Min	Modeling the Nucleation and Growth Kinetics of Heteroepitaxial Diamond on ALD-Al₂O₃/SiC via MPCVD Two-Step Growth of κ-Ga₂O₃ Thin Films on 4H-SiC Substrate Using Mist CVD with Temperature-Varied Buffer Layers Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT method Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth
Jeong, Seong-Min	Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD
Ji, Sang-Hyeon	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Ji, Shiyang	Influence of HCl on doping uniformity of 4H-SiC SJ structure
Jiang, Huaxing	Accumulated Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs After AC Gate Switching Stress Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling Implantation
Jiang, Ming	Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction Study
Jin, Rui	Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers Ring Coating Thickness Control for High Quality N type 4H-SiC Epilayers Based on Growth and Doping Kinetic Analysis Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy
Jo, Chang-Hyeon	Investigation of phase transition and its impact on the crystal structure and material properties of polycrystalline α/β Ga₂O₃ thin film
Johar, Muhammad Ali	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
Johnson, Brett	Optical characterization of doping-induced defects in n-type 4H-SiC
Johnson, Samual	Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
Jones, Chris	Critical Wafer Processes for SiC Device Fabrication
Jouault, Benoit	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Juillaguet, Sandrine	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Jung, Hanbi	Ag:AZO Electrodes Deposited by Co-sputtering Using FTS to Improve Photodetector Performance
Jung, Hyundon	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Jung, Junki	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test
Jung, Kwang Hee	Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT method Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Jung, Seungwan	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test
Jung, Sung-Pyo	Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface
Jung, Sungpyo	Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding
Jung, Yusup	Demonstration of the first full-wave rectifier circuit on β-Ga₂O₃ diodes
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Kafenda, K.	(Invited) A SiC-based Desktop Quantum Computer
Kafenda, Kim	A SiC-based Desktop Quantum Computer
Kagawa, Yasuhiro	Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Kagoshima, Eiji	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Kah, Martin	Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Kaiser, Florian	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide (Invited) Atomic defects in silicon carbide – A scalable quantum technology PL6 centers in 4H-SiC for spin-based quantum sensing
Kakushima, Kuniyuki	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Kallfass, Ingmar	Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
Kallinger, Birgit	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation Minority charge carrier lifetime for evaluating 4H-SiC epitaxial growth by Microwave detected Photoconductivity Decay Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters Evaluation of oxide processing steps using contactless corona-based CV measurements Comprehensive Analysis of Carrier Lifetime and Deep-Level Traps in 4H-SiC: Impact of Epitaxial Growth Temperature and Rate growth and characterization of “IsoPure” epitaxial layers for quantum applications Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi
Kalliomaki, Jesse	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Kamata, Isaho	Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers
Kamei, Kazuhito	Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson Solvent Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single Crystals In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property Analyses
Kamihata, Shinji	Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface nitridation
Kaminski, Nando	Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages
Kamishetty, Saideep	Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse
Kamiya, Ryosuke	Carrier lifetime in 4H-SiC substrates and relationship with device reliability
Kammel, Robert	Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters
Kamosawa, Akira	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
Kanayama, Akio	Atom Probe Tomography for Highly Implanted Phosphorus Ion in Silicon Carbide
Kaneko, Aoi	Slurry-less Electrochemical Mechanical Polishing Characteristics of 4H-SiC in Weak Alkaline Electrolyte
Kaneko, Mitsuaki	Dopant activation and compensation in p-type 4H-SiC formed by Al⁺ implantation into V-doped semi-insulating substrates Extremely uniform surface potential near the valence band edge at nitrided 4H-SiC/SiO₂ interface Physical Origin of Crystal Face-Dependent Electron Mobility in 4H-SiC (0001) and (11-20) MOSFETs Detection of energetically close deep levels in electron-irradiated 4H-SiC by capacitance transient analysis based on Bayesian inference Origin of high mobility in 4H-SiC FinFETs through theoretical analysis of electron scattering mechanism Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap Impacts of plasma nitridation on SiC surface Interface NIR SPS: Newly observed single photon sources in SiC Temperature dependence of high-field electron and hole drift velocities in 4H-SiC
Kaneko, Tadaaki	Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Kaneko, Tadaaki	Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping
Kaneko, Yu	Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces
Kang, Dae-Hwan	A study of optical emission spectroscopy (OES) for high selective-etching in E-mode HEMT process Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Kang, Gyuhyeok	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test A Comparative Analysis of Proton Irradiated 1.2 kV SiC Edge Termination Test Group
Kang, Hyemin	Comparison of Static and Dynamic Characteristics of SiC MOSFETs with Respect to TO-247 and Hermetic Package Types Impact of Socket and Current Shunt on Switching Characteristics of GaN HEMTs Investigation of Asymmetric Switching Characteristics of SiC MOSFETs Using Double Pulse Test Study on the Current Hump in SiC MOSFETs Induced by False Turn‑on of the High‑Side Body Diode Enhancing the Short-Circuit Capability of Embedded-SBD 4H-SiC MOSFETs through Ni Silicide Formation Impact of Gamma-Ray Irradiation on the Dynamic Switching Performance of TO-247-3L vs. TO-247-4L 4H-SiC MOSFETs Impact of Edge Termination Structure and Length on Switching Characteristics of SiC MOSFETs
Kang, Hyeon-Do	Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes
Kang, Junyong	Formation and reduction of surface pits on 4H-SiC epitaxial layer Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers
Kang, Kuan-Min	Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face
Kang, Min Jae	Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Kang, Minseok	Impact of SiC MOSFET Topologies and Gate Runner Design on On-Resistance and Switching Performance
Kansal, Mansha	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances
Kantor, Łukasz	Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals
Kaplar, Robert	Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Karhu, Robin	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique Evaluation of oxide processing steps using contactless corona-based CV measurements growth and characterization of “IsoPure” epitaxial layers for quantum applications Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Karim, Taskin	Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
Katagiri, Seiu	Optimization of DIW brush cleaning technology using spin scrubber in SiC device manufacturing process
Kato, Masashi	Channeling ion implantation along the <0001> direction in 4H-SiC: difference in the Si- and C-faces Characterization of 3C-SiC thick epitaxial layers grown on off- and on-axis 4H-SiC substrate Suppression of stacking faults expansion by backside proton implantation into SiC substrates Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch Processing (Invited) Point defect engineering in SiC to realize highly reliable power devices Evaluation of Auger recombination coefficient in highly N-doped 4H-SiC under high-level injection conditions Polytype analysis of 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates by Raman spectroscopy
Kato, Masashi	Carrier lifetime in 4H-SiC substrates and relationship with device reliability
Kato, Tomohisa	Influence of interfacial pores between seed/graphite holder interface on thermal field in 4H-SiC crystals grown by physical vapor transport
Kato, Tomohisa	(Invited) Stabilizing the Growth Interface in Solution Growth : Application of SiC-Saturated Conditions and Convection Control
Kauth, Julian	Influence of different contact lengths on 4H-SiC TLM test structures
Kawabe, Akihisa	Solution Growth Technique of Silicon Carbide with In Situ Observation
Kawanishi, Sakiko	An In-Situ Study of Al Effects on Step Structures under Diffusion Controlled 4H-SiC Solution Growth Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth
Kawanishi, Sakiko	(Invited) Stabilizing the Growth Interface in Solution Growth : Application of SiC-Saturated Conditions and Convection Control
Kawase, Michio	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography
Kayang, Kevin	Atomistic simulations of SiC crystal growth phenomena Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step Dynamics
Keaton, Gregory	Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
Kegg, Tom	6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT
Kelmendi, Drinas	Dynamic conduction behavior of SiC-Mosfets in the subthreshold regime and the impact of deep oxide traps to the channel depletion
Kennerly, Stacey	Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
Kerdiles, Sébastien	Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal Development of advanced Ni/4H-SiC contact modules by using laser annealing Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Kilchytska, Valeriya	Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Kim, Baek	Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding
Kim, Beom-Sang	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Kim, Bombi	Highly Stable Thin Film Transistors Based on Exfoliated β-Ga₂O₃ via RTP Annealing
Kim, Bumjoon	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Kim, Dae-Uk	Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Kim, Daeho	Metrology and Visualization of Silicon Carbide Surfaces via Interferometric 3D Optical Profilometry and Scanning Spreading Resistance Microscopy
Kim, Dohyung	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Kim, Dong-Seok	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells Impact of Gamma-Ray Irradiation on the Dynamic Switching Performance of TO-247-3L vs. TO-247-4L 4H-SiC MOSFETs
Kim, Dong-Young	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Kim, Donghan	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Kim, Doyeon	Two-Step Electrochemical Mechanical Polishing of Silicon Carbide : Decoupled Anodic Oxidation and CMP for Enhanced Removal Efficiency
Kim, Geun-Pil	Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε
Kim, Gwon-Je	A Novel Structure Design of SiC-based SCR Structure with High Holding Voltage Using Segment Topology for High Voltage ESD Protection Comparative Numerical Analysis of Cu Clip and Al Wire Bonding Structures in SiC Schottky Barrier Diodes
Kim, Gyunseo	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing
Kim, Ha-Jun	Effect of Various mm-sized Source Granules on SiC Single Crystal Growth via the PVT Method
Kim, Heungjoon	Oxidation effects on optical properties of Si and SiC photonic crystal nanocavities
Kim, Hong-Ki	Effects of Thermal and CVD Gate Oxides on Dielectric Properties and Sidewall Capacitance in SiC Trench MOS Capacitors
Kim, Hyeong-Yun	Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy
Kim, Hyoung Woo	Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications
Kim, Hyuk	BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser
Kim, Hyun-Seok	Optimization of Source-connected Field Plate in AlGaN/GaN HEMTs towards high-power and high-frequency Operations: A Simulation Study
Kim, Hyun-Seop	Excellent Temperature Stability of Al₀.₈₅Ga₀.₁₅N/Al₀.₅Ga₀.₅N HEMT
Kim, Hyunjun	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Kim, Jeff Joohyung	TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
Kim, Jeong-Gil	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Kim, Ji Hwan	Effect of energy injection on the interfacial structure and mechanical behavior of Si/Al: A molecular dynamics study
Kim, Ji-Hyun	Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect Behavior Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier Diodes Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes
Kim, Jong-Bum	Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε
Kim, Jung Gon	The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Kim, Jung Gon	Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer
Kim, Jung Gon	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth
Kim, Jung Gyu	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal Two-Step Electrochemical Mechanical Polishing of Silicon Carbide : Decoupled Anodic Oxidation and CMP for Enhanced Removal Efficiency
Kim, Jung-Gon	Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal
Kim, Jung-Gyu	(Invited) Approaches Toward High-Quality and Cost-Effective Bulk Growth of SiC Crystals
Kim, Jungwon	A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-based Devices
Kim, Junseong	Enhancing the Short-Circuit Capability of Embedded-SBD 4H-SiC MOSFETs through Ni Silicide Formation
Kim, Juyoung	Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based IPM
Kim, Kyoung Hwa	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Kim, Kyu-Hyun	Effect of Various mm-sized Source Granules on SiC Single Crystal Growth via the PVT Method
Kim, Kyunghwan	Ag:AZO Electrodes Deposited by Co-sputtering Using FTS to Improve Photodetector Performance
Kim, Kyungwon	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Kim, Luke	Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC
Kim, Min-Seok	Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes
Kim, Min-Seok	Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering
Kim, Moohyun	Highly Stable Thin Film Transistors Based on Exfoliated β-Ga₂O₃ via RTP Annealing
Kim, Myungjun	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Kim, Na Kyeoung	Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Kim, Sang Gi	A Novel Structure Design of SiC-based SCR Structure with High Holding Voltage Using Segment Topology for High Voltage ESD Protection Comparative Numerical Analysis of Cu Clip and Al Wire Bonding Structures in SiC Schottky Barrier Diodes
Kim, Sangwan	Improvement of gate-source short failure by suppressing abnormal polySi layer in 1200V SiC MOSFETs
Kim, Sangyeob	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test A Comparative Analysis of Proton Irradiated 1.2 kV SiC Edge Termination Test Group
Kim, Seongjun	A study of optical emission spectroscopy (OES) for high selective-etching in E-mode HEMT process Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Kim, Seongwoo	(Invited) The Cutting Edge and Future of Lab-Grown Diamonds
Kim, Sohee	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Kim, Su Ho	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal
Kim, Su Kon	A study of optical emission spectroscopy (OES) for high selective-etching in E-mode HEMT process
Kim, Sujin	Demonstration of the first full-wave rectifier circuit on β-Ga₂O₃ diodes
Kim, Sunghyun	Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based IPM
Kim, Tae-Gon	Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface
Kim, Tae-Sung	Optimization of Source-connected Field Plate in AlGaN/GaN HEMTs towards high-power and high-frequency Operations: A Simulation Study
Kim, Taekook	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Kim, Woongsun	Electrical Properties of 4H-SiC MOSFETs on Non-Polar Faces with Various Surface Treatments
Kim, Ye-Jin	A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect Behavior Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier Diodes Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes
Kim, Yeonjun	Impact of Edge Termination Structure and Length on Switching Characteristics of SiC MOSFETs
Kim, Young Heon	An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC
Kim, Young Jo	Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications
Kim, Young-Jin	Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
Kim, Youngkwan	The effect of the vertical ultrasonic vibration on the blade dicing of the SiC wafer
Kim, Youngsang	Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices
Kim, Yun Ho	A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-based Devices
Kim, Yun-Jin	Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method
Kimikado, Yasuaki	Ignition point control of high oxidant concentration CMP slurry
Kimoto, Tsunenobu	Physical Origin of Crystal Face-Dependent Electron Mobility in 4H-SiC (0001) and (11-20) MOSFETs Origin of high mobility in 4H-SiC FinFETs through theoretical analysis of electron scattering mechanism
Kimoto, Tsunenobu	Dopant activation and compensation in p-type 4H-SiC formed by Al⁺ implantation into V-doped semi-insulating substrates Extremely uniform surface potential near the valence band edge at nitrided 4H-SiC/SiO₂ interface Detection of energetically close deep levels in electron-irradiated 4H-SiC by capacitance transient analysis based on Bayesian inference Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap Impacts of plasma nitridation on SiC surface Interface NIR SPS: Newly observed single photon sources in SiC Temperature dependence of high-field electron and hole drift velocities in 4H-SiC
Kishigami, Hideya	Temperature Dependence of the AC-BTI in SiC MOSFETs
Kita, Koji	(Invited) Why SiO₂/SiC interface traps cannot be passivated efficiently? Carbon-related defect formation during high temperature Ar annealing in 4H-SiC enhanced by prior thermal oxidation and suppressed by H₂ annealing
Kiyoi, Akira	Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Kiyosawa, T.	(Invited) Technology Trends of performance improvement in SiC MOSFETs: The Impact of Trench and Super Junction Structure Technology
Klement, Matej	Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results
Klipfel, Nadja	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Knoll, Lars	1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Knolle, Wolfgang	Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi
Kobayashi, Keisuke	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Kobayashi, Kenji	Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope
Kobayashi, Motoki	Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates
Kobayashi, Takuma	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface nitridation Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H₂/Ar annealing process
Koch, Dominik	Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
Koerfer, Julien	Optical Critical Dimension Metrology for the SiC Trench MOSFET Process Utilizing SiO₂ Reflow for Corner Rounding to Prevent Cracking in Passivation Layers Above 500 °C Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry
Koh, Jung-Hyuk	Investigation of phase transition and its impact on the crystal structure and material properties of polycrystalline α/β Ga₂O₃ thin film
Koh, Yeongju	(Invited) Lifetime Assurance of Electric Vehicle SiC Power Modules through Thermal Model-Based Heat Management Strategy
Kohda, Makoto	Pulsed optically detected magnetic resonance of silicon vacancies in SiC
Kojima, Jun	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Kojima, Kazutoshi	5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode High temperature operating characteristics of 4H-SiC Active Pixel Sensors 5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments Designing and Simulations of 4H-SiC Neutron Sensors for Boron Neutron Capture Therapy 10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates Influence of HCl on doping uniformity of 4H-SiC SJ structure
Koller, Philipp	Exploring vanadium defects in SiC for quantum communication
Kong, Yafei	Distribution of the electrical resistivity of a n-type 4H-SiC crystal
Konishi, Kumiko	Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Konishi, Masaki	Carrier lifetime in 4H-SiC substrates and relationship with device reliability
Kono, Hiroshi	(Invited) Technology Trends of performance improvement in SiC MOSFETs: The Impact of Trench and Super Junction Structure Technology
Konstantinov, Andrei	Gate leakage imaging of silicon carbide power MOSFETs under negative-bias gate stress
Koo, Eunhee	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Koo, Sang-Mo	Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs Deep-Level Defect Effects on the performance of 4H-SiC Superjunction MOSFETs Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect Behavior Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier Diodes Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor Devices. Ga₂O₃ film with ultrahigh breakdown field via novel aerosol deposition method
Koo, Sungmo	Enhancing the Short-Circuit Capability of Embedded-SBD 4H-SiC MOSFETs through Ni Silicide Formation
Koo, Yong-Seo	A Novel Structure Design of SiC-based SCR Structure with High Holding Voltage Using Segment Topology for High Voltage ESD Protection
Korsós, Ferenc	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation
Kostelnik, Petr	Application of spectroscopic ellipsometry in silicon carbide technology
Kotagama, Viren	Optimization of a 1200V SiC lateral SiC Schottky diode Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Koutsogeorgis, Demosthenes	UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers
Kovacevic-Badstuebner, Ivana	Dynamic Current-Voltage Behavior of SiC Power MOSFETs Comparison of Ramp- and ac-based C-V Methods for Characterization of SiC Power MOSFETs SiC Power MOSFET Design for Mitigation of Oscillations in Multi-Chip Power Modules
Kovács, Nagyné Teodóra	The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Kozakai, Shota	Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap
Kozlovski, Vitalii	Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.
Kranert, Christian	Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress measurement Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC
Kraus, Hannes	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Krieger, Michael	Fabrication of ultrathin freestanding 4H-SiC layers by doping-dependent monolithic electrochemical etching Tunable, highest-quality factor mechanical oscillators for quantum technology
Krieger, Michael	Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks
Krippendorf, Florian	Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
Krisztián, Dávid	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation
Ku, Kap Ryeol	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth
Ku, Kap-Ryeol	(Invited) Approaches Toward High-Quality and Cost-Effective Bulk Growth of SiC Crystals
Ku, Young Su	Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault?
Kuball, Martin	Discrepancy of Datasheet Measurements in SiC MOSFETs in Bare Dies and TO-247 Packaged Discrete Devices
Kubota, Yoshiyuki	Observation of Depletion Layer in SiC Diodes Using a Simple EBIC Holder
Kuboya, Shigeyuki	Influence of interfacial pores between seed/graphite holder interface on thermal field in 4H-SiC crystals grown by physical vapor transport
Kuboya, Shigeyuki	(Invited) Stabilizing the Growth Interface in Solution Growth : Application of SiC-Saturated Conditions and Convection Control
Kucera, Stephan	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide
Kucera, Stephan	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Kuehnlein, Holger	Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Kuhr, Thoms	Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction
Kulkarni, Tanmay	Tunable, highest-quality factor mechanical oscillators for quantum technology
Kumar, Aakash	Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step Dynamics
Kumar, Piyush	The impact of NO annealing on the p-type SiC/SiO₂ interface: A LE- μSR study
Kuna, Pierre	Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent control
Kuo, Haochung	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration
Kupper, Rishi	Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap
Kuroi, Takashi	Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
Kuroiwa, Takeharu	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Kurokawa, Shu	Atom Probe Tomography for Highly Implanted Phosphorus Ion in Silicon Carbide
Kuroki, Shin-Ichiro	5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode High temperature operating characteristics of 4H-SiC Active Pixel Sensors 5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors Surface Morphologies and Microstructure of Ni and Ni/Nb ohmic contacts on 4H-SiC Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments Designing and Simulations of 4H-SiC Neutron Sensors for Boron Neutron Capture Therapy 10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Kushoro, Matteo Hakeem	Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector
Kusolitsch, Michael	CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
Kutsukake, Kentaro	Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation
Kutsuki, Katsuhiro	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces
Kuzmanoska, Sara	Impact of VDS Bias, Load Current and Temperature on Long-term Switching Operation of 1.2 kV SiC MOSEFTs
Kwak, Hoe-Min	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Kwak, Hyeon-Tak	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Kwon, Eunmin	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Kwon, Haeri	Improvement of gate-source short failure by suppressing abnormal polySi layer in 1200V SiC MOSFETs
Kwon, Heejin	New 1200V SiC MOSFET with improved specific-on-resistance and short-circuit capability characteristics Impact of Re-oxidation on Bias-induced Threshold Voltage Instability of SiC Power MOSFETs
Kwon, Hyang Joo	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Kwon, Hyukjun	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Kwon, Tae Seong	Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications
Kyoung, Sinsu	Demonstration of the first full-wave rectifier circuit on β-Ga₂O₃ diodes
Köhler, Johannes	growth and characterization of “IsoPure” epitaxial layers for quantum applications
Kölbel, Nadja	Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC
Körber, J.	(Invited) A SiC-based Desktop Quantum Computer
Körber, Jonathan	A SiC-based Desktop Quantum Computer PL6 centers in 4H-SiC for spin-based quantum sensing
L
La Magna, Antonino	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
La Via, Francesco	Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC Simulation of highly sensitive 3C-SiC strain sensor Thick epitaxial growth for detectors application Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current Path for superjunction industrialization by single step high energy channeling implant
Laborie, Leo	Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers 2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Lafage, Vincent	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Lafage, Vincent	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth Thick SiC-4H epitaxy perspectives
Lafford, Tamzin Amanda	Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach
Lagowski, Jacek	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Lagudu, Uma	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Lai, Jiu-Ming	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Lai, Pengyu	Temperature-Dependent TLM-Based Resistance Modeling for 4H-SiC CMOS
Lai, Wei-Liang	A Study on Simplifying the Process by Using Multiple Epitaxy and Implantation Method to fabricate SiC Super Junction
Laing, Craig	Quality Improvement in 200mm Silicon Carbide Substrate
Lamontagne, Christopher	Path for superjunction industrialization by single step high energy channeling implant
Lang, Magdalena	Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress measurement
Lapertot, Gérard	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Lau, Boon Long	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Laubenstein, Matthias	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Lavieville, Romain	Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes
Le Boterf, Alan	New insights on nitrogen doping of polycrystalline SiC fabricated by CVD
Le Royer, Cyrille	Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes Self-Heating Calibration in SiC Power Diodes Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Lebedev, Aleksandr	Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.
Lee, Bong Hak	RC Snubber Co-Design of SiC Power Modules considering Impact on Transient Switching Characteristics
Lee, Bongmook	VT modulation by dipole effect on 4H-SiC with Atomic Layer Deposited Al₂O₃/SiO₂ dielectrics
Lee, Chae Young	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal
Lee, Chang-Ju	New 1200V SiC MOSFET with improved specific-on-resistance and short-circuit capability characteristics
Lee, Chang-Ju	Impact of Re-oxidation on Bias-induced Threshold Voltage Instability of SiC Power MOSFETs
Lee, Cheon	Ag:AZO Electrodes Deposited by Co-sputtering Using FTS to Improve Photodetector Performance
Lee, Chris	Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
Lee, Dong	Silicon Carbide Epitaxial Defect and Substrate Defects Analysis by Dynamic Photoluminescence and X-ray Topography
Lee, Donghyeon	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Lee, Eunhye	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Lee, Geon-Hee	Deep-Level Defect Effects on the performance of 4H-SiC Superjunction MOSFETs Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes
Lee, Geon-Hee	Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering
Lee, Gwan-Hyoung	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Lee, Ha-Seung	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Lee, Hojung	Impact of Active Cell Geometry on the Static Performance of 10kV 4H-SiC JBS (Junction Barrier Schottky) Diodes
Lee, Hyun-Woo	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Lee, Hyung-Jin	Effects of Thermal and CVD Gate Oxides on Dielectric Properties and Sidewall Capacitance in SiC Trench MOS Capacitors
Lee, Hyung-Seok	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Lee, Jae Hak	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Lee, Jae-Gil	Impact of JFET Width on Gate Oxide Reliability under HTRB Conditions in 1700V SiC MOSFETs New 1200V SiC MOSFET with improved specific-on-resistance and short-circuit capability characteristics Impact of Re-oxidation on Bias-induced Threshold Voltage Instability of SiC Power MOSFETs Effects of Thermal and CVD Gate Oxides on Dielectric Properties and Sidewall Capacitance in SiC Trench MOS Capacitors
Lee, Jae-Hun	Optimization of Source-connected Field Plate in AlGaN/GaN HEMTs towards high-power and high-frequency Operations: A Simulation Study
Lee, Jae-Hyeong	Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning
Lee, Jehwan	(Invited) Lifetime Assurance of Electric Vehicle SiC Power Modules through Thermal Model-Based Heat Management Strategy
Lee, Jinwoo	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Lee, Jun-Woo	Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor Devices. Ga₂O₃ film with ultrahigh breakdown field via novel aerosol deposition method
Lee, Junghyun Paul	Towards realization of hybrid spin networks in solid-state system
Lee, Jungmin	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Lee, Junho	Fast Speed SiC IPM Module with Zero Voltage Gate Driving Utilizing Active Miller Clamp Function on Drive IC Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based IPM
Lee, Juyeol	Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface
Lee, Kung-Yen	Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier Diodes
Lee, Man Young	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Lee, Min-Keun	Excellent Temperature Stability of Al₀.₈₅Ga₀.₁₅N/Al₀.₅Ga₀.₅N HEMT
Lee, Myung-Hyun	Effect of Various mm-sized Source Granules on SiC Single Crystal Growth via the PVT Method Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT method
Lee, Nien-Hsuan	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide
Lee, Sang-Yun	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide Simulation Framework for Quantum Control Protocols in Spin-3/2 Silicon Vacancies of 4H-SiC
Lee, Seung Jun	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal
Lee, Seungsoo	Molecular Dynamics Investigation of Radiation-Induced Damage and Mechanical Behavior in Amorphous Si₃N₄
Lee, Soo Min	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Lee, Taeeun	Demonstration of the first full-wave rectifier circuit on β-Ga₂O₃ diodes
Lee, Taekyung	Two-Step Electrochemical Mechanical Polishing of Silicon Carbide : Decoupled Anodic Oxidation and CMP for Enhanced Removal Efficiency
Lee, Won Jun	Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault?
Lee, Won-Jae	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Effect of Various mm-sized Source Granules on SiC Single Crystal Growth via the PVT Method Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT method Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers (Invited) Approaches Toward High-Quality and Cost-Effective Bulk Growth of SiC Crystals
Lee, Woo Sung	Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault?
Lee, Wooseop	Metrology and Visualization of Silicon Carbide Surfaces via Interferometric 3D Optical Profilometry and Scanning Spreading Resistance Microscopy
Lee, Yeonju	Comparison of Static and Dynamic Characteristics of SiC MOSFETs with Respect to TO-247 and Hermetic Package Types Investigation of Asymmetric Switching Characteristics of SiC MOSFETs Using Double Pulse Test
Lee, Yi-Pin	Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
Lee, Yongwoon	Improved Silicide Formation in Vertical 4H-SiC JFET via Double Spacer Process
Legaspi, John Paul	Effects of Rotational Stacking Faults in Electronic Structure of 4H-SiC Monolayer under Electric Field Stress: A DFT-Based Molecular Dynamics Study
Lehocky, Jiri	Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results
Lei, Yuan	Study of SiC Thyristors with Integrated Temperature Sensors JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
Leib, Jürgen	Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of cryogenic temperatures Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN diodes
Leib, Jürgen	SmartSiC™ engineered substrate: a robust solution to SiC power devices bipolar degradation
Lenahan, Patrick	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Lenk, Sándor	Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique
Levinshtein, Mikhail	Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.
Ley, Maximilian	Influence of different contact lengths on 4H-SiC TLM test structures
Li, Bixue	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers
Li, Chenxi	Accumulated Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs After AC Gate Switching Stress
Li, Coris	1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Li, Hao	Quality Improvement in 200mm Silicon Carbide Substrate
Li, Jie	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example
Li, Jinan	Formation and reduction of surface pits on 4H-SiC epitaxial layer Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers
Li, Pei	Solid state defect emitters with no electrical activity in 4H-SiC
Li, Qiubo	Low-damage laser slicing technology for bulk GaN
Li, Ruijie	SiC Single Wafer Chemical Mechanical Polishing Process Improvements for Throughput and Surface Finish
Li, Song	Solid state defect emitters with no electrical activity in 4H-SiC
Li, T.	(Invited) Point defect engineering in SiC to realize highly reliable power devices
Li, Tian	Successful Development of 12 inch SiC crystal by PVT method
Li, Tong	Suppression of stacking faults expansion by backside proton implantation into SiC substrates
Li, Wangchen	Accumulated Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs After AC Gate Switching Stress
Li, Yuxin	High Quality 8-inch 4H-SiC Epitaxial Products
Li, Yuzhuo	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Li, Zheyang	Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers Ring Coating Thickness Control for High Quality N type 4H-SiC Epilayers Based on Growth and Doping Kinetic Analysis Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy
Liang, Leon	1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Liao, Pei-Chi	Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET
Liao, Pei-Chun	Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs
Licciardo, Gian Domenico	Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Characterization of 4H-SiC lateral MOSFETs up to 773K
Lichtenwalner, Daniel	TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall measurements Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold Measurements
Lien, Hao-Ming	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Liguori, Rosalba	Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Characterization of 4H-SiC lateral MOSFETs up to 773K
Lim, Chae-Yun	Optimization of Source-connected Field Plate in AlGaN/GaN HEMTs towards high-power and high-frequency Operations: A Simulation Study
Lim, Hyoung Hun	Effect of energy injection on the interfacial structure and mechanical behavior of Si/Al: A molecular dynamics study
Lim, Jang-Kwon	Gate leakage imaging of silicon carbide power MOSFETs under negative-bias gate stress Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
Lim, Jangmuk	Method for Improving Instability of Forward Voltage during Power Cycling Test about SiC Power Module
Lim, Jun Ting	Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Lin, Chi-Wei	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example
Lin, Chun-Yu	Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor
Lin, Kun-Wei	Silicon Carbide Wafering
Lin, Tung-Ying	Silicon Carbide Wafering
Lin, Weicheng	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes
Lin, Weiting	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes
Lin, Xinpeng	Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET
Liu, Cha-Lin	Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET
Liu, Chen	SiC Single Wafer Chemical Mechanical Polishing Process Improvements for Throughput and Surface Finish
Liu, Chih-Lun	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example
Liu, Chunjun	High Quality 8-inch 4H-SiC Epitaxial Products 8-12 Inch Silicon Carbide Wafer Used for AR Glasses
Liu, Hongchao	Accelerated Bipolar Degradation Robustness (aBDR) Evaluation in SiC MOSFETs
Liu, Jiaming	Application of spectroscopic ellipsometry in silicon carbide technology
Liu, Keyu	Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar
Liu, Keyu	Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation
Liu, Pengfei	Development of High-quality 6-inch P-type 4H-SiC Substrates Using Solution Growth
Liu, Siyang	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Liu, Xin	Insights from 3D Modeling of SiC Solution Growth: Realization of Unidirectional Solution Flow and High Growth Rate by Asymmetric Hot-zone Designs
Liu, Xinyu	Growth Simulation and Composition Control of SiC Crystal
Liu, Yafei	Ultrafast Imaging for Deep Defect Imaging Through Entire SiC Wafers Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Liu, Yang	Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
Lizzio, Mario	Thick epitaxial growth for detectors application
Lloyd-Hughes, James	Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers
Loenen, Sjoerd	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Lone, Shauakat	Modeling SiC crystal growth and crucible etching in the PVT furnace Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth
Lophitis, Neophytos	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances
Lorito, Gianpaolo	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors
Lou, Yanfang	8-12 Inch Silicon Carbide Wafer Used for AR Glasses
Lu, Sheng'Ou	Numerical Modeling of Impurities and Defects in 4H-SiC
Lu, Shengou	Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Lu, Tsai-Pei	Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
Ludtke, Ingo	Discrepancy of Datasheet Measurements in SiC MOSFETs in Bare Dies and TO-247 Packaged Discrete Devices
Luo, Lan	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Luo, Xingjun	Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling Implantation
Luo, Xixi	Fabrication of a 1200V SiC Trench MOSFET with an Inverted T-shaped Deep P Junction Based on an 8-inch Platform
Lutz, Josef	Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling Test Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with measurements and simulations
Lynch, David	Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
Lynch, Justin	Impact of Active Cell Geometry on the Static Performance of 10kV 4H-SiC JBS (Junction Barrier Schottky) Diodes Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation (BDM) Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
Lyu, Chuyang	Carbon-related defect formation during high temperature Ar annealing in 4H-SiC enhanced by prior thermal oxidation and suppressed by H₂ annealing
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Ma, Alex	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
Ma, Lijun	Entangled Photon Source on the SiCOI Platform
Ma, Teng	Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation
Mabuchi, Yuichiro	Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers Modeling of forward current conduction in 4H-SiC PiN diodes
Mabuchi, Yuichiro	Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers
Macfarlane, Douglas	Critical Wafer Processes for SiC Device Fabrication
Machida, Nobuo	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
MacRae, Thomas	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Maeda, Tomonori	Surface Morphologies and Microstructure of Ni and Ni/Nb ohmic contacts on 4H-SiC 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications
Magerl, Fabian Jürgen	A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin Qubits
Magna, A. La	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Magnusson, Björn	The elusive Bulk Inclusion, sizing, wafer- and ingot-level localization and their effect on dislocation generation and epitaxial defectivity in 4H-SiC
Mahadik, Nadeemullah A	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Rapid Wafer-Scale Evaluation of Defects in SiC Using Deep Learning Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction (Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers Development of High Energy Channeling Implantation Process for SiC Superjunction Devices
Mailig, Rengie Mark	Effects of Rotational Stacking Faults in Electronic Structure of 4H-SiC Monolayer under Electric Field Stress: A DFT-Based Molecular Dynamics Study
Maira, Giovanni	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure
Maistriuk, Oleksandr	2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Makai, László	Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry
Makino, Takahiro	High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Malevsky, Dmitrii	Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.
Manchineni, Harsha Vardhan	Impact of ALD Oxidants and Deposition Temperature on Electrical Characteristics of Al₂O₃/SiO₂/SiC MOS-Capacitors
Mancini, Stephen	'Ladder' design for improved static electrical characteristics for 1.2kV 4H-SiC MOSFET with deep P-well Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration Impact of Active Cell Geometry on the Static Performance of 10kV 4H-SiC JBS (Junction Barrier Schottky) Diodes Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation (BDM) Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
Mancuso, Alfio Samuele	Thick epitaxial growth for detectors application Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current
Mantooth, H. Alan	Temperature-Dependent TLM-Based Resistance Modeling for 4H-SiC CMOS
Mao, Dongliang	Successful Development of 12 inch SiC crystal by PVT method
Mao, Kaili	Successful Development of 12 inch SiC crystal by PVT method
Marchesi, Simone	Impact of Predefined Defects on Device Reliability
Marcuzzi, Alberto	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress
Maresca, Luca	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances (Invited) TCAD-Driven Design and Analysis of Advanced 3D SiC MOSFET Structures Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance
Marinskiy, Dmitriy	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Mariya, Anna	Reducing metal delamination in SiC devices by carbon removal
Martens, Tobias	Towards High-Fidelity Quantum Gates for the V2 Defect in 4H-SiC Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Martin, Eric	Ultrafast Imaging for Deep Defect Imaging Through Entire SiC Wafers
Martinella, Corinna	Influence of doping on heavy-ion induced color centers in 4H-SiC Optical characterization of heavy-ion induced damage in 4H-SiC Defect formation by irradiation with thermal and fast neutrons in SiC
Martinez-Limia, Alberto	Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process
Martirosyan, Naira	Modeling SiC crystal growth and crucible etching in the PVT furnace Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth
Marton, Attila	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Maslougkas, Sotirios	Impact of VDS Bias, Load Current and Temperature on Long-term Switching Operation of 1.2 kV SiC MOSEFTs
Mastro, Michael	Rapid Wafer-Scale Evaluation of Defects in SiC Using Deep Learning
Masui, Shuzo	BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser
Matacena, Ilaria	Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance
Matsubara, Yasutaka	Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography
Matsubara, Yasutaka	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation
Matsukawa, Shinya	Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Matsumura, Yuken	Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Time Dependence of Processed Groove Profile –
Matsuoka, Minori	Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Matsushima, Kiyoshi	Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch Processing Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Matsushita, Yohsuke	Quantitative Simulation of Bipolar Degradation in 4H-SiC Using UV Pulsed Laser: Considerations on the Critical Duration of Threshold Minority Carrier Density Adverse effects of proton implantation in 4H-SiC epilayers on stacking fault expansion Application of UV photoluminescence spectrum mapping for stacking faults that were expanded from the in-grown stacking fault on a thick 4H-SiC epilayer
Matsuyama, Hiroko	Evaluation of Auger recombination coefficient in highly N-doped 4H-SiC under high-level injection conditions
Mauceri, Marco	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth Thick SiC-4H epitaxy perspectives Thick epitaxial growth for detectors application
Mauceri, Marco	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Mauro, Anthony Di	Temperature-Dependent TLM-Based Resistance Modeling for 4H-SiC CMOS
Mawby, P. A.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Mawby, Philip	A low inductance SiC MOSFET power module packaging design with PCB shielding layer Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy
May, Alexander	Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters Utilizing SiO₂ Reflow for Corner Rounding to Prevent Cracking in Passivation Layers Above 500 °C Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi Characterization of 4H-SiC lateral MOSFETs up to 773K
Mazen, Frédéric	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Mazza, Bruna	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Mazzamuto, Fulvio	Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC Development of High Energy Channeling Implantation Process for SiC Superjunction Devices Path for superjunction industrialization by single step high energy channeling implant
Mcaleese, Callum D.	Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis
McMillan, Stephen	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Megalini, Ludovico	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Meguro, Tatsuya	5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode High temperature operating characteristics of 4H-SiC Active Pixel Sensors 5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments Designing and Simulations of 4H-SiC Neutron Sensors for Boron Neutron Capture Therapy 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications
Melnyk, Kyrylo	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Melnyk, Kyrylo	Trench Superjunction (SJ) Platform Technology for SiC Power Devices
Mendes Martins, Maria	Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes Optical characterization of doping-induced defects in n-type 4H-SiC The impact of NO annealing on the p-type SiC/SiO₂ interface: A LE- μSR study
Meneghesso, Gaudenzio	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress
Meneghini, Matteo	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress
Menguelti, Kevin	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide
Merkle, Arno	Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer Reuse
Mesemanolis, Athanasios	Dynamic switching benchmark of latest gen SiC MOSFETs for Automotive and Urban Air Mobility power modules
Messina, Angelo	Impact of Predefined Defects on Device Reliability
Messina, Cristian	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth
Metreveli, Alex	Investigating the temperature dependence of charge carrier lifetime in low-doped n-type 4H-SiC
Meyer, Fabian	Key Mechanisms of Laser-Based Splitting and Dicing of 4H-SiC Wafers
Micard, Quentin	Thick epitaxial growth for detectors application
Micard, Quentin	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Michael, Julian	Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer etching
Michałowski, Paweł	SIMS Profiling of 3D SiC Mesas: Top and Sidewall Analysis Enhanced detection of implanted noble gases and hydrogen in silicon carbide by surface and vacuum engineering in SIMS
Michon, Adrien	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Mihalache, Iuliana	Wide temperature range analysis of ITO/4H-SiC Schottky diodes with applications in UV photodetection
Mihara, Hiroshi	Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Mikami, Kyota	Dopant activation and compensation in p-type 4H-SiC formed by Al⁺ implantation into V-doped semi-insulating substrates Extremely uniform surface potential near the valence band edge at nitrided 4H-SiC/SiO₂ interface Physical Origin of Crystal Face-Dependent Electron Mobility in 4H-SiC (0001) and (11-20) MOSFETs Detection of energetically close deep levels in electron-irradiated 4H-SiC by capacitance transient analysis based on Bayesian inference Origin of high mobility in 4H-SiC FinFETs through theoretical analysis of electron scattering mechanism Impacts of plasma nitridation on SiC surface Interface NIR SPS: Newly observed single photon sources in SiC Temperature dependence of high-field electron and hole drift velocities in 4H-SiC
Mikolajick, Thomas	Impact of ALD Oxidants and Deposition Temperature on Electrical Characteristics of Al₂O₃/SiO₂/SiC MOS-Capacitors
Miller, Ariana	Modeling and Experimental Evaluation Comparing Normal to c-plane Stress-Strain of Two-Step ICP Etched Microstructures.
Min, Jungwook	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing
Min, Kyung Tae	Reducing Parasitic Inductance Through Power Terminal Grouping in SiC Power Modules for EV Applications
Mir, Hanan	Key Mechanisms of Laser-Based Splitting and Dicing of 4H-SiC Wafers
Misra, Veena	VT modulation by dipole effect on 4H-SiC with Atomic Layer Deposited Al₂O₃/SiO₂ dielectrics
Mitani, Takeshi	Photoluminescence study on micropipes in SiC substrates for improving comprehensive full-wafer defect detection accuracy Influence of interfacial pores between seed/graphite holder interface on thermal field in 4H-SiC crystals grown by physical vapor transport Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth (Invited) Stabilizing the Growth Interface in Solution Growth : Application of SiC-Saturated Conditions and Convection Control
Mithun, Devapriyo	Characterization of Stress and Defects in 4H Silicon Carbide Wafers by Scanning Infrared Depolarization
Mitic, Slobodan	SiC bulk inspection: digital defect traceability from puck to epi-ready wafers
Mitsou, Maria Lucia	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Miura, Daiki	Impacts of plasma nitridation on SiC surface
Miyaoka, Shuichi	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
Miyazaki, Kosuke	Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Mizuochi, Norikazu	Room-temperature coherent photoelectrical readout of single spins in 4H-SiC Interface NIR SPS: Newly observed single photon sources in SiC Detection and characterization of divacancy-related defects in 4H-SiC by coherent photoelectrical spin readout at room temperature
Mizutani, Seiji	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation
Mizutani, Seiya	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation
Mizutani, Yuya	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation
Moens, Peter	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress A charge pumping study on interface trap creation in SiC trench MOSFETs during gate switching instability (Invited) SiO₂ as the Gate Dielectric for SiC MOSFETs: An Unabridged Story Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC MOSFETs
Momeni, Davood	Accelerated Bipolar Degradation Robustness (aBDR) Evaluation in SiC MOSFETs
Mony, Karine	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Moon, Jeong Hyun	Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs
Moon, Soo-Young	A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect Behavior
Mooney, Thomas	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Morgan, Adam	'Ladder' design for improved static electrical characteristics for 1.2kV 4H-SiC MOSFET with deep P-well Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs
Mori, Seigo	(Invited) Comprehensive Study on Theoretical Performance Limit of 4H-SiC Full- and Semi-Superjunction Structures Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar engineering
Mori, Waka	In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property Analyses
Mori, Yuki	FinFET Effect of Vertical-channel Fin-SiC MOSFET Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Morin, Sonia	Anodic Oxidation of 4H-Silicon Carbide
Morioka, Naoya	Room-temperature coherent photoelectrical readout of single spins in 4H-SiC Interface NIR SPS: Newly observed single photon sources in SiC Detection and characterization of divacancy-related defects in 4H-SiC by coherent photoelectrical spin readout at room temperature
Morisette, Dallas	Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Morita, Iori	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Morita, Takuya	Quantitative Simulation of Bipolar Degradation in 4H-SiC Using UV Pulsed Laser: Considerations on the Critical Duration of Threshold Minority Carrier Density Adverse effects of proton implantation in 4H-SiC epilayers on stacking fault expansion Application of UV photoluminescence spectrum mapping for stacking faults that were expanded from the in-grown stacking fault on a thick 4H-SiC epilayer
Motta, Chiara	Anodic Oxidation of 4H-Silicon Carbide
Mueller, Ralf	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Muhammad, Safdar	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Mulpuri, Vamsi	Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications
Mun, Jae Kyoung	A study of optical emission spectroscopy (OES) for high selective-etching in E-mode HEMT process
Mun, Suhyun	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Munk-Nielsen, Stig	Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
Muoio, Annamaria	Simulation of highly sensitive 3C-SiC strain sensor Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector
Muoio, Annamaria	Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current
Murata, Koichi	Pulsed optically detected magnetic resonance of silicon vacancies in SiC Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers Room-temperature coherent photoelectrical readout of single spins in 4H-SiC Modeling of forward current conduction in 4H-SiC PiN diodes
Murayama, Kenta	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography
Murdin, Benedict N.	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Murphy, Aled	Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers
Myalitsin, Anton	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Myers-Ward, Rachael	Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices
Mysore, Madhu Lakshman	Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling Test Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with measurements and simulations
Müller, Stephan	Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC
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Na, Moonkyong	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Nagasawa, Hiroyuki	Modeling of the Physical Properties of 3C-SiC/4H-SiC Heterostructures for TCAD Simulation SiC Growth by Multi-Wafer Close-Space Sublimation
Nagasawa, Hiroyuki	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Nagaya, Keisuke	Carrier lifetime in 4H-SiC substrates and relationship with device reliability
Nagel, Michel	Dynamic Current-Voltage Behavior of SiC Power MOSFETs Comparison of Ramp- and ac-based C-V Methods for Characterization of SiC Power MOSFETs SiC Power MOSFET Design for Mitigation of Oscillations in Multi-Chip Power Modules
Nagy, Roland	High-resolution nanoscale AC quantum sensing in SiC
Najbauer, Eszter Eva	Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique
Nakamoto, Masashi	Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson Solvent Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single Crystals In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property Analyses
Nakamura, Daisuke	Reconstruction of PVT-SiC Growth Setup to Simultaneously Achieve High Material Yield, High Growth Rate, and Large Crystal Height
Nakano, Y.	(Invited) Comprehensive Study on Theoretical Performance Limit of 4H-SiC Full- and Semi-Superjunction Structures
Nakano, Yuki	Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar engineering
Nakanuma, Takato	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces
Nakayama, Koji	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Nam, Okhyun	Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity
Nam, Okhyun	Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD
Namba, Ryosuke	10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes
Nania, Chiara	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates Micropipes in SiC die Observed by Molten KOH Etching Advanced defects study and monitoring in new generation 4H-SiC devices
Narita, Syunki	Body diode reliability and reverse recovery characteristics of short tapered SJ-MOSFET fabricated by MeV Al ion implantation
Natzke, Philipp	Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes
Nebesnyi, Valerii	2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Neitzert, Heinz-Christoph	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Neubert, Frank	Polytype Transitions in Silicon Carbide: A Macroscopic View
Neudeck, Philip	Electrical Characterization and Modeling of IC Gen. 12 4H-SiC JFETs
Newton, A.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Newton, Andrew	On the process optimization of ALD-deposition of SiO₂ for SiC MOS processes Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer etching EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC surfaces Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance
Ngo, Trong Si	An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy
Nguyen, Anh Dung	Surface Morphologies and Microstructure of Ni and Ni/Nb ohmic contacts on 4H-SiC
Nguyen, Hoang-Linh	Modeling the Nucleation and Growth Kinetics of Heteroepitaxial Diamond on ALD-Al₂O₃/SiC via MPCVD Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD
Niethammer, Matthias	A SiC-based Desktop Quantum Computer (Invited) A SiC-based Desktop Quantum Computer
Nikai, Yutaka	Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Nikolaev, Andrei	Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.
Ning, Xiuxiu	(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development
Nishikawa, Tetsuri	Room-temperature coherent photoelectrical readout of single spins in 4H-SiC Detection and characterization of divacancy-related defects in 4H-SiC by coherent photoelectrical spin readout at room temperature
Nishino, Junichi	Development of device failure prediction method using multi-modal analysis technique
Nishiwaki, Tsuyoshi	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Nishizawa, Shin-Ichi	Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals Reconstruction of PVT-SiC Growth Setup to Simultaneously Achieve High Material Yield, High Growth Rate, and Large Crystal Height
Nistor, Iulian	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances
Nitta, Tetsuya	Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Niwa, Hiroki	Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET
Noda, Susumu	Oxidation effects on optical properties of Si and SiC photonic crystal nanocavities
Noh, Hyoungju	Improvement of gate-source short failure by suppressing abnormal polySi layer in 1200V SiC MOSFETs
Nufer, Stefan	Investigation of Mechanical Stress and Warpage in 200mm Silicon Carbide Wafers: Implications for Production Scalability
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Oh, Chanhyoung	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC IGBTs Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF HR-STEM Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Oh, Hyeong-Seok	Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor Devices.
Oh, Jong-Min	Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor Devices. Ga₂O₃ film with ultrahigh breakdown field via novel aerosol deposition method
Oh, Pil Kyoung	Method for Improving Instability of Forward Voltage during Power Cycling Test about SiC Power Module
Ohba, Takayuki	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Ohira, Kentaro	Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope
Ohkubo, Yuji	Slurry-less Electrochemical Mechanical Polishing Characteristics of 4H-SiC in Weak Alkaline Electrolyte
Ohshima, Takeshi	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide 5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode High temperature operating characteristics of 4H-SiC Active Pixel Sensors 5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments 10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications Pulsed optically detected magnetic resonance of silicon vacancies in SiC Room-temperature coherent photoelectrical readout of single spins in 4H-SiC In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation Detection and characterization of divacancy-related defects in 4H-SiC by coherent photoelectrical spin readout at room temperature
Ohtani, Noboru	BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser Photoluminescence studies of defect formation during the seeding process of physical vapor transport growth of SiC Behaviors of basal plane dislocations in 4H-SiC epilayer grown on the facet trace region of substrate Possible interaction between basal plane dislocations and point defects in physical vapor transport grown 4H-SiC crystals
Okada, Yohei	Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Okajima, Kazuki	Room-temperature coherent photoelectrical readout of single spins in 4H-SiC
Okamoto, Mitsuo	Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Okano, Naoki	Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD measurement
Oki, Tatsunori	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Okuyama, Suguru	Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar engineering
Olietti, Andrea	Anodic Oxidation of 4H-Silicon Carbide
Onaya, Takashi	Carbon-related defect formation during high temperature Ar annealing in 4H-SiC enhanced by prior thermal oxidation and suppressed by H₂ annealing
Onda, Shoichi	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Onishi, Kentaro	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins
Opprecht, Mathieu	Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal Development of advanced Ni/4H-SiC contact modules by using laser annealing
Orlov, Ivan	SiC bulk inspection: digital defect traceability from puck to epi-ready wafers
Osanai, Tsutomu	Development of device failure prediction method using multi-modal analysis technique
Oshiyama, Atsushi	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Otsuka, Takeshi	Observation of Depletion Layer in SiC Diodes Using a Simple EBIC Holder
Ousdal, Erlend	Optical characterization of doping-induced defects in n-type 4H-SiC Electrical identification of color centers in 6H silicon carbide using a comparative study of deep level transient spectroscopy and density functional theory
Owen, Michael	Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices
Ozaki, Taisei	4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments
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Paik, Seoyoung	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide
Paik, Seoyoung	Simulation Framework for Quantum Control Protocols in Spin-3/2 Silicon Vacancies of 4H-SiC
Paillet, Matthieu	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Pain, Sophie L.	Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis
Palmer, Jacob	Optimizing Diamond Slurry Parameters for Polishing SiC Wafers
Pan, Shuangyuan	Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy
Pan, Yani	(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development
Panasci, Salvatore Ethan	Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain
Pang, Athena	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Pang, Xu	Growth Simulation and Composition Control of SiC Crystal
Pap, Zsombor	Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry
Papathanasiou, Niklas	Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements
Papon, Anne-Marie	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Parisi, Paolo	Advanced defects study and monitoring in new generation 4H-SiC devices
Park, Byungwook	The effect of the vertical ultrasonic vibration on the blade dicing of the SiC wafer
Park, Chan Ho	Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Park, Chang-Jun	A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect Behavior Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier Diodes Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes
Park, Chulhwan	Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes
Park, Gihoon	Improved Silicide Formation in Vertical 4H-SiC JFET via Double Spacer Process
Park, Hongsik	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Park, Hyunyoung	Comparison of Static and Dynamic Characteristics of SiC MOSFETs with Respect to TO-247 and Hermetic Package Types Impact of Edge Termination Structure and Length on Switching Characteristics of SiC MOSFETs
Park, Jae-Hyeon	Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT method
Park, Jae-Hyung	Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
Park, Jaewon	Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells
Park, Ji-Hyeon	Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy
Park, Jieon	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Park, Jin-Goo	Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface
Park, Jong Hwi	The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT growth Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single crystal
Park, Jucheol	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate
Park, Mi Seon	Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Park, Min-Jae	Impact of JFET Width on Gate Oxide Reliability under HTRB Conditions in 1700V SiC MOSFETs
Park, Minji	Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering
Park, Myung-Beom	A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-based Devices
Park, Sangmin	Fast Speed SiC IPM Module with Zero Voltage Gate Driving Utilizing Active Miller Clamp Function on Drive IC Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based IPM
Park, Se-Rim	Deep-Level Defect Effects on the performance of 4H-SiC Superjunction MOSFETs Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes
Park, Seonwoo	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Park, Seung-Hyun	Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs Deep-Level Defect Effects on the performance of 4H-SiC Superjunction MOSFETs A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect Behavior Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier Diodes Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε
Park, Sumin	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test
Park, Tae Min	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Park, Tae-Yong	Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD
Park, Tae-Yong	Modeling the Nucleation and Growth Kinetics of Heteroepitaxial Diamond on ALD-Al₂O₃/SiC via MPCVD Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth
Park, Woosung	Impact of Re-oxidation on Bias-induced Threshold Voltage Instability of SiC Power MOSFETs
Park, Woosung	New 1200V SiC MOSFET with improved specific-on-resistance and short-circuit capability characteristics
Park, Yeong Gyeong	Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial Layer Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault? Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH Etching
Park, Young Jae	A study of optical emission spectroscopy (OES) for high selective-etching in E-mode HEMT process Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Park, Yubin	Improved Silicide Formation in Vertical 4H-SiC JFET via Double Spacer Process
Pascu, Razvan	Wide temperature range analysis of ITO/4H-SiC Schottky diodes with applications in UV photodetection
Pastuovic, Zeljko	Influence of doping on heavy-ion induced color centers in 4H-SiC Optical characterization of heavy-ion induced damage in 4H-SiC
Patel, Nirali	Impact of VDS Bias, Load Current and Temperature on Long-term Switching Operation of 1.2 kV SiC MOSEFTs
Patterson, Brian	Impact of SiC MOSFET Topologies and Gate Runner Design on On-Resistance and Switching Performance
Paul, Rajrupa	Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs
Peng, Bo	JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
Peng, Hongyu	(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development
Peng, Tong	Low-damage laser slicing technology for bulk GaN
Peng, Yan	Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography
Peracchi, Stefania	Influence of doping on heavy-ion induced color centers in 4H-SiC Optical characterization of heavy-ion induced damage in 4H-SiC
Perazzi, Marco	CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
Perera, Kushani Hapuhinna	UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy
Peters, Jan-Hendrik	Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
Petraš, Ivan	Multi-scale model of ICP-RIE process for improvement of SiC gate trench shape
Peyre, Hervé	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Pezoldt, Joerg	Polytype Transitions in Silicon Carbide: A Macroscopic View
Pfusterschmied, Georg	CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
Philipossian, Ara	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Philippe, Godignon	Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN Diodes Development of advanced Ni/4H-SiC contact modules by using laser annealing Exploring the Versatility of SiC: Emerging Applications beyond Power Electronics Self-Heating Calibration in SiC Power Diodes
Philippe, Godignon	SmartSiC™ engineered substrate: a robust solution to SiC power devices bipolar degradation
Philpott, Ryan	Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Phung, Nhat-Minh	Modeling the Nucleation and Growth Kinetics of Heteroepitaxial Diamond on ALD-Al₂O₃/SiC via MPCVD Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD
Pi, Xiaodong	Distribution of the electrical resistivity of a n-type 4H-SiC crystal Homoepitaxy and defect control of 300-μm ultra-thick 4H-SiC layers Growth and analysis of low resistivity polycrystalline silicon carbide using physical vapor transport
Pi, Xiaodong	Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Pi, Xiaodong	Numerical Modeling of Impurities and Defects in 4H-SiC
Pichat, Benjamin	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process
Pieruccini, Marco	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Piluso, Nicolò	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure Impact of Predefined Defects on Device Reliability Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates Micropipes in SiC die Observed by Molten KOH Etching Advanced defects study and monitoring in new generation 4H-SiC devices
Pixius, Christophe	A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin Qubits
Pobegen, Gregor	Time-resolved Electron Beam Induced Current (TR-EBIC): A high potential method to map minority charge carrier lifetime in SiC
Pocaterra, Marco	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs High-Voltage Reliability Study for 3.3kV High-K SiC Planar MOSFETs Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Portail, Marc	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
Portoghese, Rosario	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Postava, Kamil	Application of spectroscopic ellipsometry in silicon carbide technology
Potier, Alexandre	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process New insights on nitrogen doping of polycrystalline SiC fabricated by CVD
Powell, Michael	On the process optimization of ALD-deposition of SiO₂ for SiC MOS processes Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer etching Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance
Preti, Silvio	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth Thick SiC-4H epitaxy perspectives
Pristavu, Gheorghe	Wide temperature range analysis of ITO/4H-SiC Schottky diodes with applications in UV photodetection
Privitera, Vittorio	Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering
Prokscha, Thomas	The impact of NO annealing on the p-type SiC/SiO₂ interface: A LE- μSR study
Pujade, Max	Development of advanced Ni/4H-SiC contact modules by using laser annealing Self-Heating Calibration in SiC Power Diodes
Purz, Torben	Ultrafast Imaging for Deep Defect Imaging Through Entire SiC Wafers
Putz, Stefan	Exploring vanadium defects in SiC for quantum communication
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Qi, Yunyi	Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers 2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Qian, Weining	Formation and reduction of surface pits on 4H-SiC epitaxial layer Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers
Qiao, Liang	Successful Development of 12 inch SiC crystal by PVT method
Quadrivi, Eleonora	Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector
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Ra, Yoon-Ji	Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush Conditioning Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface
Rabbi, Shariare Hossain	High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
Rabinzohn, Patrick	Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration
Raciti, Domenica	Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates Micropipes in SiC die Observed by Molten KOH Etching Advanced defects study and monitoring in new generation 4H-SiC devices
Raghothamachar, B.	(Invited) The mechanisms of Defect Replication, Propagation, Modification, Nucleation and Multiplication in 4H-SiC PVT-grown Substrates and CVD-grown Homo-epitaxial Layers
Raghothamachar, Balaji	Atomistic simulations of SiC crystal growth phenomena Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step Dynamics Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Development of High Energy Channeling Implantation Process for SiC Superjunction Devices Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Rahimo, Munaf	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances
Rajabzadeh, Zahra	Atomistic simulations of SiC crystal growth phenomena
Ramadan, Zaher	Modeling SiC crystal growth and crucible etching in the PVT furnace Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth
Ramadoss, Koushik	Enhanced mobility in SiC (0001) MOSFETs using a decoupled plasma nitridation (DPN) process and oxide deposition
Ramakrishnan, Anbalagan	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Ran, Li	Effect of Dynamic Reverse Bias on the Blocking Capability of SiC MOSFETs under Development
Rana, Tawhid	Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
Rascunà, Simone	Anodic Oxidation of 4H-Silicon Carbide Impact of Predefined Defects on Device Reliability ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES. (Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Rascunà, Simone	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Rathi, Servin	Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers 2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Rathin, Mandal	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Rathnakar, Athul	UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Rawat, Tejender Singh	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes
Reale, Francesco	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Realmuto, Chiara	THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.
Reboud, Roman	New insights on nitrogen doping of polycrystalline SiC fabricated by CVD
Rehlaender, Philipp	Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results
Reichenberger, Oskar	Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks
Reichmann, Alexander	Atomistic simulations of SiC crystal growth phenomena SiC crystal growth simulations using the minimal atomic energy deposition method
Reigosa, Paula Diaz	1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Remy, Jarod	Silicon Carbide Radiation Sensor under High Temperature and Defects Analysis with ODMR
Rengarajan, Rajan	Quality Improvement in 200mm Silicon Carbide Substrate
Renxu, Jia	Study of SiC Thyristors with Integrated Temperature Sensors JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
Renz, A. B.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Renz, Arne Benjamin	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates Trench Superjunction (SJ) Platform Technology for SiC Power Devices On the process optimization of ALD-deposition of SiO₂ for SiC MOS processes Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer etching Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Reshanov, Sergey A.	Gate leakage imaging of silicon carbide power MOSFETs under negative-bias gate stress
Rho, Kongshik	Characterization of 3C-SiC thick epitaxial layers grown on off- and on-axis 4H-SiC substrate
Riccio, Michele	Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with Transconductance
Richter, Jan	Ultra-Pure SiC Source material for optical SiC crystal growth
Riegelmeyer, Jan	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Rimini, Emanuele	Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering
Rinaldi, Nicola	Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Characterization of 4H-SiC lateral MOSFETs up to 773K
Ripamonti, Nicolo	Design Space Exploration of SiC Power Module Package via Surrogate Model
Ristić, Laura	Effect of Crucible and Thermal Insulation Porosity on Growth Rate and Nitrogen Incorporation in PVT SiC Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals
Roccaforte, F.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Roccaforte, Fabrizio	Challenges in 1SSF detection in 4H-SiC epilayer and related failure Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs Simultaneous p- and n-type doping carrier profiling of 4H-SiC MOSFETs by Scanning Microwave Impedance Microscopy Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Roh, Dwight	Path for superjunction industrialization by single step high energy channeling implant
Roh, Dwight	Development of High Energy Channeling Implantation Process for SiC Superjunction Devices
Roh, Jeongkyun	Highly Stable Thin Film Transistors Based on Exfoliated β-Ga₂O₃ via RTP Annealing
Roig, Jaume	Impact of VDS Bias, Load Current and Temperature on Long-term Switching Operation of 1.2 kV SiC MOSEFTs Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results
Rolland, E.	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Romaner, Lorenz	Atomistic simulations of SiC crystal growth phenomena Modeling SiC crystal growth and crucible etching in the PVT furnace SiC crystal growth simulations using the minimal atomic energy deposition method Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth
Rommel, Mathias	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation Influence of different contact lengths on 4H-SiC TLM test structures Minority charge carrier lifetime for evaluating 4H-SiC epitaxial growth by Microwave detected Photoconductivity Decay Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea 4H-SiC Tunneling Light Emitter as a Light-Source for Monolithically Integrated Off-Resonant Excitation of Silicon Vacancies Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters Evaluation of oxide processing steps using contactless corona-based CV measurements Utilizing SiO₂ Reflow for Corner Rounding to Prevent Cracking in Passivation Layers Above 500 °C Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi Characterization of 4H-SiC lateral MOSFETs up to 773K
Rondomanski, Patrick	Graphite – The Hot Zone Hero
Rossitto, Antonio	Advanced defects study and monitoring in new generation 4H-SiC devices
Rouchier, Severin	SiC engineered substrate versatility demonstration versus industry requirement
Rouchier, Severin	Low defectivity epilayers grown on SmartSiC™ engineered substrates
Royer, C. Le	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Rubin, Leonard	Path for superjunction industrialization by single step high energy channeling implant
Rubino, Alfredo	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate Characterization of 4H-SiC lateral MOSFETs up to 773K
Rueb, Michael	Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
Ruffino, Francesco	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Rusch, Oleg	Optical Critical Dimension Metrology for the SiC Trench MOSFET Process Reduction of Sidewall Roughness in SiC Trench Formation by Improvement of Photoresist Mask Utilizing SiO₂ Reflow for Corner Rounding to Prevent Cracking in Passivation Layers Above 500 °C
Russo, Alfio	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure
Russo, Andrea	ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES.
Ryu, Ga-Ae	Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth
Ryu, Sei-Hyung	TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs Electrical Properties of 4H-SiC MOSFETs on Non-Polar Faces with Various Surface Treatments Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall measurements Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold Measurements
S
Sabri, Shadi	Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening
Saggio, M.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Saggio, Mario	Simulating Short Circuit events on SiC MOSFET devices A study on different SiC MOSFET Edge Termination Ruggedness THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.
Sahajwalla, Veena	Where light ends, energy begins: Transformation of waste bulbs enclosures into multiphasic silicon carbide for Lithium-ion battery
Saito, Jun	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Saito, Wataru	Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals
Sakakima, Hiroki	Excess Carrier-Induced Modulation of SiC Mechanical Properties: Insights from First-Principles Calculations
Sakane, H.	(Invited) Point defect engineering in SiC to realize highly reliable power devices
Sakane, Hitoshi	Suppression of stacking faults expansion by backside proton implantation into SiC substrates
Sakane, Shunya	Evaluation of transmission spectra of vanadium-doped 4H-SiC substrates by optical transmittance measurement
Sakata, Yusaku	Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single Crystals
Sakharov, Aleksey	Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.
Sako, Hideki	Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron microscope
Sakuda, Yusuke	Observation of Depletion Layer in SiC Diodes Using a Simple EBIC Holder
Sakuraba, Masao	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Salamone, Matteo	Advanced defects study and monitoring in new generation 4H-SiC devices
Saldanha Faria, Sarah	Influence of doping on heavy-ion induced color centers in 4H-SiC Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Optical characterization of heavy-ion induced damage in 4H-SiC
Sameshima, Junichiro	Atom Probe Tomography for Highly Implanted Phosphorus Ion in Silicon Carbide
Samperi, Orazio	Depth profiling of boron-related minority traps in n-type 4H-SiC by junction DLTS measurements
Sampurno, Yasa	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Sanchez, Edward	Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
Sangregorio, Enrico	Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current Path for superjunction industrialization by single step high energy channeling implant
Sano, K.	(Invited) Technology Trends of performance improvement in SiC MOSFETs: The Impact of Trench and Super Junction Structure Technology
Sano, Masaki	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Sano, Yasuhisa	Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Time Dependence of Processed Groove Profile –
Santonastaso, Claudio	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Sanzaro, Salvatore	NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact
Saragai, Mitsuk	Photoluminescence studies of defect formation during the seeding process of physical vapor transport growth of SiC
Sato, Seima	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Sato, Shigeo	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Sato, Takahide	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Savtchouk, Alexandre	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Scalisi, Melissa Lucia	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Schaaff, Friedrich	Ultra-Pure SiC Source material for optical SiC crystal growth
Scheiman, D. A.	(Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers
Schillinger-Engel, Kai	Key Mechanisms of Laser-Based Splitting and Dicing of 4H-SiC Wafers
Schley, Michael	Ultra-Pure SiC Source material for optical SiC crystal growth
Schmid, Fabian	Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi
Schmid, Jonas	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide
Schmid, Patrick	Impact of ambient conditions on oxide thickness distribution on 4H-SiC in thermal oxidation furnace Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Schmid, Ulrich	CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
Schmidt, Kirby	Silicon Carbide Epitaxial Defect and Substrate Defects Analysis by Dynamic Photoluminescence and X-ray Topography
Schneider, Ella B.	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Schneider, Nick	1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Schnitzler, Ruben	Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
Schoenhofen, Walter	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Scholten, Dick	Fowler-Nordheim current at negative gate bias in SiC MOSFETs
Scholten, Dick	High-Temperature H₂- and N₂- containing Surface Conditioning for SiO₂/4H-SiC Interface Optimization
Schoner, Adolf	Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV
Schraml, Michael	Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea
Schröder, Arne	Design Space Exploration of SiC Power Module Package via Surrogate Model
Schulze, Jörg	Influence of different contact lengths on 4H-SiC TLM test structures A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin Qubits Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements
Schulze, Jörg	The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics 4H-SiC Tunneling Light Emitter as a Light-Source for Monolithically Integrated Off-Resonant Excitation of Silicon Vacancies Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi
Schulze, Jörg	High-Temperature H₂- and N₂- containing Surface Conditioning for SiO₂/4H-SiC Interface Optimization
Schulze, Jörg	Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks
Schulze, Simon	Next generation laser annealing for high throughput SiC ohmic contact formation and dopant activation
Schunemann, Pete	Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Schwarberg, Jannik	Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of VSi
Schwarzenbach, Walter	SiC engineered substrate versatility demonstration versus industry requirement Low defectivity epilayers grown on SmartSiC™ engineered substrates
Schwarzenbach, Walter	SmartSiC™ engineered substrate: a robust solution to SiC power devices bipolar degradation
Schöler, Michael	SiC bulk inspection: digital defect traceability from puck to epi-ready wafers
Schüttauf, Jan-Willem	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Sciuto, Antonella	Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering Impact of Predefined Defects on Device Reliability
Scuderi, Mario	Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering Impact of Predefined Defects on Device Reliability
Scuderi, Valentina	Anodic Oxidation of 4H-Silicon Carbide A study on different SiC MOSFET Edge Termination Ruggedness THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.
Seifert, Marko	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing
Senzaki, Junji	Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD measurement Development of device failure prediction method using multi-modal analysis technique Multi-channel defect inspection for 4H-SiC epitaxial wafer and integrated defect classification Photoluminescence study on micropipes in SiC substrates for improving comprehensive full-wafer defect detection accuracy Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation Modeling
Seo, Han Seok	Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate
Seo, Jae Hwa	Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications
Seo, Keisuke	Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography
Seo, Keisuke	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation
Seo, Yeonwoo	Impact of Socket and Current Shunt on Switching Characteristics of GaN HEMTs
Seok, Ogyun	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test A Comparative Analysis of Proton Irradiated 1.2 kV SiC Edge Termination Test Group
Setoya, Takashi	Temperature Dependence of the AC-BTI in SiC MOSFETs
Severino, Andrea	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure Impact of Predefined Defects on Device Reliability Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates Micropipes in SiC die Observed by Molten KOH Etching Advanced defects study and monitoring in new generation 4H-SiC devices
Sezaki, Hiroshi	Surface Morphologies and Microstructure of Ni and Ni/Nb ohmic contacts on 4H-SiC 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded substrates
Sgrignuoli, Fabrizio	All-electrical quantum magnetometry based on commercially off-the-shelf SiC devices
Shah, Vishal	Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching (Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Shao, Hongyu	Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates
Shao, Yongliang	Growth of 8 inches SiC single crystal with low BPDs defect
Sharma, Parikshit	Advanced defects study and monitoring in new generation 4H-SiC devices
Sharpe, Matthew	Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis
Shen, Hsuan-Jen	Silicon Carbide Wafering
Shen, Pengyuan	High Quality 8-inch 4H-SiC Epitaxial Products
Shen, Shih Chiang	Impact of cell design on switching performance of 1.7kVSiC VDMOSFET
Shi, Dong	Growth of 8 inches SiC single crystal with low BPDs defect
Shi, Zhiqiang	(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development
Shima, Akio	Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Shimamoto, Kenta	Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography
Shimazaki, Konosuke	Interface NIR SPS: Newly observed single photon sources in SiC
Shimbori, Atsushi	Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
Shimizu, Haruka	FinFET Effect of Vertical-channel Fin-SiC MOSFET Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Shimizu, Kota	Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs
Shimozato, Atsushi	Development of device failure prediction method using multi-modal analysis technique
Shin, Hoon-Kyu	Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic Performance
Shin, Ikhwan	Molecular Dynamics Investigation of Radiation-Induced Damage and Mechanical Behavior in Amorphous Si₃N₄
Shin, June-Chul	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Shin, Jung Won	Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault?
Shin, Samuell	Fast Speed SiC IPM Module with Zero Voltage Gate Driving Utilizing Active Miller Clamp Function on Drive IC Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based IPM
Shin, Sangchul	(Invited) Lifetime Assurance of Electric Vehicle SiC Power Modules through Thermal Model-Based Heat Management Strategy
Shin, Seokjin	RC Snubber Co-Design of SiC Power Modules considering Impact on Transient Switching Characteristics
Shin, So-Min	Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method
Shin, Weon Ho	Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes
Shin, Yun-Ji	Modeling the Nucleation and Growth Kinetics of Heteroepitaxial Diamond on ALD-Al₂O₃/SiC via MPCVD Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices Two-Step Growth of κ-Ga₂O₃ Thin Films on 4H-SiC Substrate Using Mist CVD with Temperature-Varied Buffer Layers Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Shin, Yun-Ji	Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method
Shin, Yun-Ji	(Invited) Approaches Toward High-Quality and Cost-Effective Bulk Growth of SiC Crystals
Shin, Yunho	Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding
Shindou, Hiroyuki	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Shingo, Ryosuke	Mechanism of Threshold Voltage Drift in SiC MOSFETs under Bipolar AC Gate Stress via Photon-Assisted Electron Injection
Shiono, Tsubasa	Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers Modeling of forward current conduction in 4H-SiC PiN diodes
Shiono, Tsubasa	Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers
Shiraga, Hiroaki	Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar engineering
Shiraishi, Kenji	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Shoen, Luke	Silicon Carbide Radiation Sensor under High Temperature and Defects Analysis with ODMR
Shu, Ji	Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition
Shuhao, Cheng	Study of SiC Thyristors with Integrated Temperature Sensors
Shustrov, Yury	Multi-scale model of ICP-RIE process for improvement of SiC gate trench shape
Siddiqui, Iram	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Singh, Kanwar	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
Singh, Navab	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Sink, Joseph	Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon Carbide
Sinkó, Luca	Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage technique
Sitta, Alessandro	ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER DEVICES.
Smecca, E.	(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices
Smirnov, Andrey	Effect of Crucible and Thermal Insulation Porosity on Growth Rate and Nitrogen Incorporation in PVT SiC Multi-scale model of ICP-RIE process for improvement of SiC gate trench shape Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals
Smoliner, Jürgen	Time-resolved Electron Beam Induced Current (TR-EBIC): A high potential method to map minority charge carrier lifetime in SiC
Soda, Daiki	Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Sohl, Christina	Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC
Soleimanikahnoj, Sina	All-electrical quantum magnetometry based on commercially off-the-shelf SiC devices
Soleimanzadeh, Reza	Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs Dynamic switching benchmark of latest gen SiC MOSFETs for Automotive and Urban Air Mobility power modules Design Space Exploration of SiC Power Module Package via Surrogate Model
Sometani, Mitsuru	Influence of HCl on doping uniformity of 4H-SiC SJ structure
Son, Jangyup	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Son, Nguyen Tien	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide
Song, Bong-Shik	Oxidation effects on optical properties of Si and SiC photonic crystal nanocavities
Song, Gyeong Jun	Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and buffer-layer The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC wafers
Song, Ki-Sun	Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
Song, Qingwen	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation
Song, Sangyun	Impact of Gamma-Ray Irradiation on the Dynamic Switching Performance of TO-247-3L vs. TO-247-4L 4H-SiC MOSFETs
Song, Xaioqing	Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Song, Zhaoxu	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Soto, Cordero	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Soukhojak, Andrey	Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography
Souzis, Andy	Silicon Carbide Epitaxial Defect and Substrate Defects Analysis by Dynamic Photoluminescence and X-ray Topography
Spry, David	Modeling and Experimental Evaluation Comparing Normal to c-plane Stress-Strain of Two-Step ICP Etched Microstructures.
Stache, Joachim	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Stahlbush, R. E.	(Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers
Stahlbush, Robert	Rapid Wafer-Scale Evaluation of Defects in SiC Using Deep Learning Implementation of Growth Interrupt into Commercial Growth Process to Realize Low BPD Epilayers for High Power Devices Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction
Stahlbush, Robert	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
Stankovic, Nenad	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Stark, Bernard	High-Density Packaging Approaches for SiC Power MOSFET Modules
Stark, Roger	1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Stecconi, Tommaso	1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Steidl, Timo	Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent control
Steidl, Timo	PL6 centers in 4H-SiC for spin-based quantum sensing
Stein, Shane	Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall measurements Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold Measurements
Steller, Nils	A Comprehensive Study of Buffer Layer Thickness and Doping Effects on SiC Defect Density Comprehensive Analysis of Carrier Lifetime and Deep-Level Traps in 4H-SiC: Impact of Epitaxial Growth Temperature and Rate Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Stirling, Robert	Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT process
Stoehr, Markus	Characterization of Stress and Defects in 4H Silicon Carbide Wafers by Scanning Infrared Depolarization
Stokeley, K.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Stokeley, Katarzyna	EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC surfaces
Straub, Tobias	Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals
Strüber, Sven	Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth Machine
Su, Arthur	Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability
Su, Yan-Kuin	Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor
Subramanian, Shanthi	Quality Improvement in 200mm Silicon Carbide Substrate
Subramanian, Shanthi	Silicon Carbide Epitaxial Defect and Substrate Defects Analysis by Dynamic Photoluminescence and X-ray Topography
Sueda, Shunta	Behaviors of basal plane dislocations in 4H-SiC epilayer grown on the facet trace region of substrate
Suematsu, Tomoka	FinFET Effect of Vertical-channel Fin-SiC MOSFET
Suemitsu, Maki	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Sugawara, Katsutoshi	Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET
Sugiyama, Tomohiko	Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch Processing
Suk, Myung Eun	Molecular Dynamics Investigation of Radiation-Induced Damage and Mechanical Behavior in Amorphous Si₃N₄ Effect of energy injection on the interfacial structure and mechanical behavior of Si/Al: A molecular dynamics study
Sun, Juhyeong	Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation
Sun, Lejia	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation
Sun, Li	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography
Sun, Rongyan	Slurry-less Electrochemical Mechanical Polishing Characteristics of 4H-SiC in Weak Alkaline Electrolyte
Sun, Weifeng	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Sun, Yongqiang	Formation and reduction of surface pits on 4H-SiC epitaxial layer
Sun, Zhongchao	Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
Sundaresan, Siddarth	Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications
Sung, Simon	Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction
Sung, Woongje	'Ladder' design for improved static electrical characteristics for 1.2kV 4H-SiC MOSFET with deep P-well Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration Impact of Active Cell Geometry on the Static Performance of 10kV 4H-SiC JBS (Junction Barrier Schottky) Diodes Design optimization of 600V 4H-SiC Lateral Bi-directional MOSFET (L-BiD-MOSFET) with 3D TCAD simulation Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation (BDM) Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs Development of High Energy Channeling Implantation Process for SiC Superjunction Devices High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
Suto, Takeru	FinFET Effect of Vertical-channel Fin-SiC MOSFET
Suzuki, Masanori	Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson Solvent Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single Crystals In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property Analyses
Suzuki, T.	(Invited) Technology Trends of performance improvement in SiC MOSFETs: The Impact of Trench and Super Junction Structure Technology
Suzuki, Takahiro	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Szabo, Maximilian	Extraction of trench sidewall capacitance by linear component separation towards wafer level evaluation
Szabó, Attila	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation
Szekrenyes, Zsolt	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Szelag, Bertrand	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Szivós, János	Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique
Söderlund, Mikko	Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration
Sütő, Attila	Optical Critical Dimension Metrology for the SiC Trench MOSFET Process
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Tachida, Yusuke	Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Tahara, Daisuke	Influence of interfacial pores between seed/graphite holder interface on thermal field in 4H-SiC crystals grown by physical vapor transport
Tahara, Kosuke	Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces
Tahara, Kosuke	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins
Takahara, Mariko	Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping
Takahara, Mariko	Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping
Takahashi, Kousei	Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence simulation Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray topography
Takahashi, Masaki	Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
Takahashi, Misa	Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Takahashi, Satoru	BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser
Takahashi, Shunta	Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques Impacts of wafer thinning process using laser slice technique on device characteristics
Takami, Shinichiro	Ignition point control of high oxidant concentration CMP slurry
Takano, Kazumi	Quantitative Simulation of Bipolar Degradation in 4H-SiC Using UV Pulsed Laser: Considerations on the Critical Duration of Threshold Minority Carrier Density Adverse effects of proton implantation in 4H-SiC epilayers on stacking fault expansion Application of UV photoluminescence spectrum mapping for stacking faults that were expanded from the in-grown stacking fault on a thick 4H-SiC epilayer
Takashima, Hideaki	Interface NIR SPS: Newly observed single photon sources in SiC
Takei, Kohei	Temperature Dependence of the AC-BTI in SiC MOSFETs
Takenaka, Kensuke	Body diode reliability and reverse recovery characteristics of short tapered SJ-MOSFET fabricated by MeV Al ion implantation Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET
Takeuchi, Shigeki	Interface NIR SPS: Newly observed single photon sources in SiC
Takeyama, Akinori	5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode High temperature operating characteristics of 4H-SiC Active Pixel Sensors 5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments 10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Takigawa, Ryo	Room temperature bonding of SiC chip and Cu heat sink substrate
Takinai, Yoshiki	Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation Modeling
Talbi, Abderazek	Development of advanced Ni/4H-SiC contact modules by using laser annealing
Talesara, Vishank	Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications
Taminiau, Tim H.	Towards High-Fidelity Quantum Gates for the V2 Defect in 4H-SiC Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Tan, Chee Keong	Low-pressure Mist-CVD technique for Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga₂O₃
Tan, Qun	Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers
Tanabe, Kazuyoshi	Possible interaction between basal plane dislocations and point defects in physical vapor transport grown 4H-SiC crystals
Tanaka, Aoto	Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson Solvent
Tanaka, Hiroki	Designing and Simulations of 4H-SiC Neutron Sensors for Boron Neutron Capture Therapy
Tanaka, K.	(Invited) Technology Trends of performance improvement in SiC MOSFETs: The Impact of Trench and Super Junction Structure Technology
Tanaka, Takanori	Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques Impacts of wafer thinning process using laser slice technique on device characteristics Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET
Tanaka, Yasunori	5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode High temperature operating characteristics of 4H-SiC Active Pixel Sensors 5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs 4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments 10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes 4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications Influence of HCl on doping uniformity of 4H-SiC SJ structure In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Tang, Gongyue	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Tang, Xiaoyan	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation
Tani, Shota	Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals
Tanigawa, Kazuma	5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode
Tanioka, Toshikazu	Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Tanner, Philip	Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Taoka, Tomoki	High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena
Taucher, Lorenz	Modeling SiC crystal growth and crucible etching in the PVT furnace Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal Growth
Tawara, Takeshi	Body diode reliability and reverse recovery characteristics of short tapered SJ-MOSFET fabricated by MeV Al ion implantation
Taylor, Paul	Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability
Teien, Aurora	Optical characterization of doping-induced defects in n-type 4H-SiC
Thiering, Gergo	Theory of optical spin-polarization and related ODMR contrast optimization strategy for an axial divacancy center in 4H-SiC
Thierry, Nicolas	Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
Thomas, Dave	Critical Wafer Processes for SiC Device Fabrication
Thompson, Kimberly	Graphite – The Hot Zone Hero
Thotapally, Manojgna	Impact of Transient Surge Current Pulses on Bipolar Degradation in SiC Power MOSFETs
Thuries, Louis	Development of advanced Ni/4H-SiC contact modules by using laser annealing
Thye Chong, Loy	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Thörnberg, Jimmy	The elusive Bulk Inclusion, sizing, wafer- and ingot-level localization and their effect on dislocation generation and epitaxial defectivity in 4H-SiC
Tian, Jiaqi	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport
Tian, Xinkai	Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability
Tian, Yu	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Timmer, Gerben M.	Towards High-Fidelity Quantum Gates for the V2 Defect in 4H-SiC Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
Titl, Maximilian	growth and characterization of “IsoPure” epitaxial layers for quantum applications
Toberny, Jakub	Application of spectroscopic ellipsometry in silicon carbide technology
Tochizaki, Wataru	Behaviors of basal plane dislocations in 4H-SiC epilayer grown on the facet trace region of substrate
Toda, Kohei	Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity Mapping
Toh, Daisetsu	Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Time Dependence of Processed Groove Profile –
Tojima, Kazuya	Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
Tokoro, Nobuhiro	Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
Tomita, Takuro	High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena
Tongxiao, Hou	Study of SiC Thyristors with Integrated Temperature Sensors JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
Torky, Mohamed	Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation (BDM) Development of High Energy Channeling Implantation Process for SiC Superjunction Devices
Torres, Victor	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates 6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT High Quality P-type 4H-SiC Growth by PVT Method
Toshimitsu, Shion	Origin of high mobility in 4H-SiC FinFETs through theoretical analysis of electron scattering mechanism
Tournier-Fillon, Aurélien	Impact of Predefined Defects on Device Reliability
Toyama, Haruko	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces
Trotta, Antonio	Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector
Troutot, N.	(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Troutot, Nicolas	Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Trupke, Michael	Exploring vanadium defects in SiC for quantum communication
Tsai, Chen-Hua	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Tsai, Darwin	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
Tsai, I-Chen	Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs
Tsai, Ming-Wei	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example
Tsuchida, Hidekazu	Pulsed optically detected magnetic resonance of silicon vacancies in SiC 4H-SiC as Material for Electricity Infrastructure Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers Room-temperature coherent photoelectrical readout of single spins in 4H-SiC Modeling of forward current conduction in 4H-SiC PiN diodes
Tsuchida, Hidekazu	Analysis of Burgers vectors of basal plane dislocations in 4H-SiC wafer with thick epitaxial layers
Tsui, Bing-Yue	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example A Study on Simplifying the Process by Using Multiple Epitaxy and Implantation Method to fabricate SiC Super Junction Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs
Turchetti, Scott	Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Turner, K.	(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions
Turner, Kelly	Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy
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Udono, Haruhiko	Evaluation of transmission spectra of vanadium-doped 4H-SiC substrates by optical transmittance measurement
Udvarhelyi, Péter	Solid state defect emitters with no electrical activity in 4H-SiC
Ueno, Tetsuya	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Ujihara, Toru	Insights from 3D Modeling of SiC Solution Growth: Realization of Unidirectional Solution Flow and High Growth Rate by Asymmetric Hot-zone Designs
Ujihara, Toru	Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit formation
Ul-Hassan, J.	(Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers
Ul-Hassan, Jawad	Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon Carbide Investigating the temperature dependence of charge carrier lifetime in low-doped n-type 4H-SiC Electrical identification of color centers in 6H silicon carbide using a comparative study of deep level transient spectroscopy and density functional theory Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent control
Ulibarri, Agatha Christie	Influence of doping on heavy-ion induced color centers in 4H-SiC Optical characterization of heavy-ion induced damage in 4H-SiC
Ullrich, Dénes	Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique
Ultsch, Samuel	4H-SiC Tunneling Light Emitter as a Light-Source for Monolithically Integrated Off-Resonant Excitation of Silicon Vacancies
Umezawa, Hitoshi	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Unruh, Konstantin	Fabrication of ultrathin freestanding 4H-SiC layers by doping-dependent monolithic electrochemical etching
Urakami, Msato	Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals
Urata, Yuki	Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Utsumi, Jun	Room temperature bonding of SiC chip and Cu heat sink substrate
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Vakulenko, Anton	Ultrafast Imaging for Deep Defect Imaging Through Entire SiC Wafers
Valek, Lukáš	Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals
Vallejos-Burgos, Fernando	Graphite – The Hot Zone Hero
van de Stolpe, Guido	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
van der Maas, Maurice	Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum Networks
van Dijk, Harmke	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth.
van Riggelen, Margriet	Towards High-Fidelity Quantum Gates for the V2 Defect in 4H-SiC
Vanaparthy, Sravan	Fast Speed SiC IPM Module with Zero Voltage Gate Driving Utilizing Active Miller Clamp Function on Drive IC Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based IPM
Vandevenne, Ilias	Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC MOSFETs
Vanellone, Silvia	Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction detector
Vecchio, Carmelo	Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth
Velasco, Ever	Quality Improvement in 200mm Silicon Carbide Substrate
Vento, Fabiana	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis Challenges in 1SSF detection in 4H-SiC epilayer and related failure Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates Micropipes in SiC die Observed by Molten KOH Etching Advanced defects study and monitoring in new generation 4H-SiC devices
Victory, James	Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results
Vigh, Benjamin	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Vignesh, Shanmugam Bhaskar	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Vigo, Lorenzo	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors
Vines, Lars	Optical characterization of doping-induced defects in n-type 4H-SiC
Vines, Lasse	Depth profiling of boron-related minority traps in n-type 4H-SiC by junction DLTS measurements Electrical identification of color centers in 6H silicon carbide using a comparative study of deep level transient spectroscopy and density functional theory
Vitale, Roberta	Anodic Oxidation of 4H-Silicon Carbide
Vitanza, Elisa	Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural Analysis THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.
Viti, Ivan	All-electrical quantum magnetometry based on commercially off-the-shelf SiC devices
Vivien, Laurent	Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates
Vivona, Marilena	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Voo, Qin Gui Roth	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs
Vorobyov, Vadim	Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent control PL6 centers in 4H-SiC for spin-based quantum sensing
Voss, Kay-Obbe	Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion Irradiation Optical characterization of heavy-ion induced damage in 4H-SiC
Votadoro, Valerio	Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS Capacitors Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Votadoro, Valerio	Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced strain
Votadoro, Valerio	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes
Vozny, Andrii	Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit integration
Vu Thi Ha,	Designing and Simulations of 4H-SiC Neutron Sensors for Boron Neutron Capture Therapy
Vuong, Nguyen	Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam Epitaxy The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy
Vémolová, Hana	Ultrafast Imaging for Deep Defect Imaging Through Entire SiC Wafers
W
Wachowiak, Andre	Impact of ALD Oxidants and Deposition Temperature on Electrical Characteristics of Al₂O₃/SiO₂/SiC MOS-Capacitors
Wada, Ryota	Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
Wagner, Tobias	Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth Machine
Wai, Leong Ching	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Wakabayashi, Takumi	Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD measurement
Wan, Haiyong	A low inductance SiC MOSFET power module packaging design with PCB shielding layer Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers
Wan, Lu	Design Space Exploration of SiC Power Module Package via Surrogate Model
Wan, Yuxi	Fabrication of a 1200V SiC Trench MOSFET with an Inverted T-shaped Deep P Junction Based on an 8-inch Platform Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET
Wang, Anqi	Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Wang, Anqi	Numerical Modeling of Impurities and Defects in 4H-SiC
Wang, Anqi	Growth and analysis of low resistivity polycrystalline silicon carbide using physical vapor transport
Wang, Gaoxu	Fabrication of a 1200V SiC Trench MOSFET with an Inverted T-shaped Deep P Junction Based on an 8-inch Platform
Wang, Guangming	8-12 Inch Silicon Carbide Wafer Used for AR Glasses
Wang, Guibao	JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs
Wang, Haochi	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Wang, Heng	Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition
Wang, Hui	Temperature-Dependent TLM-Based Resistance Modeling for 4H-SiC CMOS
Wang, Jiahui	Ring Coating Thickness Control for High Quality N type 4H-SiC Epilayers Based on Growth and Doping Kinetic Analysis
Wang, Jiangfeng	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport
Wang, Jiulong	Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy
Wang, Jyun-Jhih	Silicon Carbide Wafering
Wang, Po-Han	First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an Example
Wang, Qiangqiang	Growth Simulation and Composition Control of SiC Crystal
Wang, Rong	Homoepitaxy and defect control of 300-μm ultra-thick 4H-SiC layers
Wang, Rongkun	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers
Wang, Runze	Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Wang, Waldo	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Wang, Wei-Xiang	Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs
Wang, Weijie	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Wang, Xiaoping	Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET
Wang, Xinglong	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport
Wang, Yan	Low-pressure Mist-CVD technique for Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga₂O₃
Wang, Zehua	Control of SSF Defects in 8-inch SiC Epitaxial Wafers
Wang, Zhiwei	Effect of Dynamic Reverse Bias on the Blocking Capability of SiC MOSFETs under Development
Wang, Zi-Hao	Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility Transistor
Watahiki, Tatsuro	Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET
Watanabe, Heiji	Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their origins Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface nitridation Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC interfaces Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H₂/Ar annealing process
Watanabe, Hiroshi	Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques
Watanabe, Naoki	Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs
Watanabe, Satoshi	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Watanabe, Yukimune	Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE) Method
Weber, Heiko	Fabrication of ultrathin freestanding 4H-SiC layers by doping-dependent monolithic electrochemical etching Tunable, highest-quality factor mechanical oscillators for quantum technology
Weber, Michael	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation
Wehrle, Moritz	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs
Wei, Jiaxing	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Wei, Ke	Accumulated Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs After AC Gate Switching Stress
Wei, Rusheng	Successful Development of 12 inch SiC crystal by PVT method
Wei, Xiaoguang	Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers
Weig, Eva M.	Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide Tunable, highest-quality factor mechanical oscillators for quantum technology
Weigt, Benjamin	Optical localization of passivation discoloration using admittance spectroscopy Dynamic conduction behavior of SiC-Mosfets in the subthreshold regime and the impact of deep oxide traps to the channel depletion
Wellmann, Peter	Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth Machine
Wen, Yan-Yu	Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs
Wermeille, Didier	Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based Approach UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers
Whear, Oliver	Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching
Widiez, Julie	Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser Anneal Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI Substrates (Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential
Widjaja, Yuniarto	2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Widmann, M.	(Invited) A SiC-based Desktop Quantum Computer
Widmann, Matthias	A SiC-based Desktop Quantum Computer
Wiedemann, Jakob	Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth Machine
Wilson, Bradley	Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Wilson, Marshall	Evaluation of oxide processing steps using contactless corona-based CV measurements Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky Diodes
Wimmer, Paul	Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress measurement
Wirths, Stephan	Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs Dynamic switching benchmark of latest gen SiC MOSFETs for Automotive and Urban Air Mobility power modules
Wirtitsch, Daniel	Exploring vanadium defects in SiC for quantum communication
Witt, Tony	Impact of SiC MOSFET Topologies and Gate Runner Design on On-Resistance and Switching Performance
Wißgott, Christian	Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation Minority charge carrier lifetime for evaluating 4H-SiC epitaxial growth by Microwave detected Photoconductivity Decay Comprehensive Analysis of Carrier Lifetime and Deep-Level Traps in 4H-SiC: Impact of Epitaxial Growth Temperature and Rate
Won, Jongsung	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Won, Young-Hyun	Optimization of Source-connected Field Plate in AlGaN/GaN HEMTs towards high-power and high-frequency Operations: A Simulation Study
Wong, Hiu Yung	Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
Woo, Junsik	The effect of the vertical ultrasonic vibration on the blade dicing of the SiC wafer
Woo, Ki-Yeol	Modeling the Nucleation and Growth Kinetics of Heteroepitaxial Diamond on ALD-Al₂O₃/SiC via MPCVD Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity
Woo, Sola	Demonstration of the first full-wave rectifier circuit on β-Ga₂O₃ diodes
Woo, Sung Yun	Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications
Woods, Callie	Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening
Woolley, Jack	Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers
Wrachtrup, J.	(Invited) A SiC-based Desktop Quantum Computer
Wrachtrup, Jörg	A SiC-based Desktop Quantum Computer Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent control PL6 centers in 4H-SiC for spin-based quantum sensing
Wu, Chen-Hang	Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer
Wu, Donglin	Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography
Wu, George	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
Wu, Jiale	Effect of Dynamic Reverse Bias on the Blocking Capability of SiC MOSFETs under Development
Wu, Jimmy	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
Wu, Qiqi	Investigation of Mechanical Stress and Warpage in 200mm Silicon Carbide Wafers: Implications for Production Scalability
Wu, Ruei-Chi	Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs
Wu, Ruei-Ci	Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
Wu, Tian-Li	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes
Wu, Yew-Chung Sermon	A Study on Simplifying the Process by Using Multiple Epitaxy and Implantation Method to fabricate SiC Super Junction
Wu, Yongzhong	Growth of 8 inches SiC single crystal with low BPDs defect
Wörnle, R.	(Invited) A SiC-based Desktop Quantum Computer
Wörnle, Raphael	A SiC-based Desktop Quantum Computer PL6 centers in 4H-SiC for spin-based quantum sensing
X
Xeni, Nikolas	2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Xie, Xinyu	Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Xie, Xinyu	Distribution of the electrical resistivity of a n-type 4H-SiC crystal
Xie, Xuejian	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography
Xie, Xuejian	Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates
Xie, Zhigao	Low-pressure Mist-CVD technique for Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga₂O₃
Xiong, Xixi	Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates
Xu, Lingmao	Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Xu, Lingmao	Distribution of the electrical resistivity of a n-type 4H-SiC crystal
Xu, Mingsheng	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes
Xu, Suyu	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Xu, Xiangang	Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography
Xu, Xueping	Quality Improvement in 200mm Silicon Carbide Substrate
Xuan, Lingling	Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Xuan, Lingling	Numerical Modeling of Impurities and Defects in 4H-SiC
Xuesong, Liu	Study of SiC Thyristors with Integrated Temperature Sensors JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
Y
Yadav, Ravi Prakash	4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time
Yamada, Jumpei	Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Time Dependence of Processed Groove Profile –
Yamada, Yoshihisa	Optimization of DIW brush cleaning technology using spin scrubber in SiC device manufacturing process
Yamamoto, Mari	Photoluminescence study on micropipes in SiC substrates for improving comprehensive full-wafer defect detection accuracy
Yamamoto, Masayuki	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Yamamura, Kaito	High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena
Yamamura, Kazuya	Slurry-less Electrochemical Mechanical Polishing Characteristics of 4H-SiC in Weak Alkaline Electrolyte
Yamanaka, Kotaro	Detection of energetically close deep levels in electron-irradiated 4H-SiC by capacitance transient analysis based on Bayesian inference
Yamashita, Yusuke	Carrier lifetime in 4H-SiC substrates and relationship with device reliability
Yamauchi, Ryohei	Room temperature bonding of SiC chip and Cu heat sink substrate
Yamazaki, Yuichi	Pulsed optically detected magnetic resonance of silicon vacancies in SiC
Yang, Deren	Distribution of the electrical resistivity of a n-type 4H-SiC crystal Homoepitaxy and defect control of 300-μm ultra-thick 4H-SiC layers
Yang, Deren	Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method
Yang, Deren	Numerical Modeling of Impurities and Defects in 4H-SiC
Yang, Dong-In	Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
Yang, Jiao	Method to get different silicon carbide trenches profile using plasma etching for high performance SiC MOSFET
Yang, Jinghe	Method to get different silicon carbide trenches profile using plasma etching for high performance SiC MOSFET
Yang, Kyungah	Where light ends, energy begins: Transformation of waste bulbs enclosures into multiphasic silicon carbide for Lithium-ion battery
Yang, Min	Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method Growth and Properties of SiGe - AlN Core-Shell Crystals
Yang, Mingzhi	Growth of 8 inches SiC single crystal with low BPDs defect
Yang, Songlin	Low-Defect Ni/Ti Composite Backside Ohmic Contact for thinned 4H-SiC Devices Formed by 355 nm UV Laser Annealing
Yang, Tingqiang	CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
Yang, Woong-Suk	Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction Engineering Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea
Yang, Xianglong	Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray Topography
Yang, Xianglong	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport
Yang, Xiaoli	(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development
Yang, Xiaoshuang	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode
Yang, Yingchen	Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition
Yang, Yongsuk	Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP Processes
Yano, Hiroshi	Mechanism of Threshold Voltage Drift in SiC MOSFETs under Bipolar AC Gate Stress via Photon-Assisted Electron Injection
Yapa Mudiaynselage, Dinuth Chamila Yapa Bandara	Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs
Ye, Yong Liang	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Yeh, Chun-Wei	Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
Yen, Cheng-Tyng	An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR)
Yen, Chih Hung	Impact of cell design on switching performance of 1.7kVSiC VDMOSFET
Yen, Hung-Hsin	Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²
Yeo, Abdul Hannan	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs
Yeo, Do-Hyeong	Excellent Temperature Stability of Al₀.₈₅Ga₀.₁₅N/Al₀.₅Ga₀.₅N HEMT
Yeo, Im-Gyu	The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam Epitaxy
Yeo, Yee Chia	A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature Stress
Yeo, Yi Xuan	Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling Solution
Yeon, Kyu-Bong	Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
Yildirim, Mustafa Akif	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer etching Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface layers Preliminary Study into Ferroelectric Properties of HfO₂/SiO₂ SiC MOS Capacitors for Improved Short Circuit Capability Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET Enhancing SiO₂/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance
Ying, Peter Shih Hsin	Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output
Yoda, Takashi	Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Yoichi, Sanshiro	Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation Modeling
Yokogawa, Shinji	Multi-channel defect inspection for 4H-SiC epitaxial wafer and integrated defect classification Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation Modeling
Yonezawa, Yosiyuki	Defect formation by irradiation with thermal and fast neutrons in SiC
Yoo, Kwan-Hee	Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal Growth
Yoon, Hyowon	Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling Test
Yoon, Sang Won	Reducing Parasitic Inductance Through Power Terminal Grouping in SiC Power Modules for EV Applications RC Snubber Co-Design of SiC Power Modules considering Impact on Transient Switching Characteristics
Yoon, Young Jun	Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications
Yoshikawa, Jun	Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch Processing Reduction of Basal Plane Dislocations in 8-inch SiC Substrates Using Novel Crystal Growth Method Based on Batch Processing
Yoshikawa, Takeshi	Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson Solvent Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single Crystals In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property Analyses Epitaxial growth of 3C-SiC and 4H-SiC by travelling solvent method under isothermal conditions Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth
Yoshikawa, Takeshi	(Invited) Stabilizing the Growth Interface in Solution Growth : Application of SiC-Saturated Conditions and Convection Control
Youn, Jeong-Min	Investigation of phase transition and its impact on the crystal structure and material properties of polycrystalline α/β Ga₂O₃ thin film
Youn, Sung Tae	Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers
Young, Robert	Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers 2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET
Yu, Guojian	Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates
Yu, Guojian	Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates
Yu, Le	Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers Ring Coating Thickness Control for High Quality N type 4H-SiC Epilayers Based on Growth and Doping Kinetic Analysis Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy
Yu, Miao	JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs
Yu, Renze	High-Density Packaging Approaches for SiC Power MOSFET Modules
Yu, Susanna	Impact of SiC MOSFET Topologies and Gate Runner Design on On-Resistance and Switching Performance
Yu, Weichen	Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes
Yu, Yiren	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Yu, Zhi-Gang	All-electrical quantum magnetometry based on commercially off-the-shelf SiC devices
Yuan, Baocheng	Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction Study
Yuan, Hao	Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation
Yuan, Zhaoxue	First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates Optimization of a 1200V SiC lateral SiC Schottky diode Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench MOSFET
Yuan, Zhenzhou	Growth Simulation and Composition Control of SiC Crystal
Yuan, Zimo	Investigating the temperature dependence of charge carrier lifetime in low-doped n-type 4H-SiC
Yun, Nick	Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation (BDM)
Yuzuriha, Mikihiro	In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray irradiation
Z
Zanetti, Edoardo	Simulating Short Circuit events on SiC MOSFET devices A study on different SiC MOSFET Edge Termination Ruggedness THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.
Zanoni, Enrico	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress
Zappacosta, Alexander	High-resolution nanoscale AC quantum sensing in SiC
Zappalà, Giorgio	Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate Stress
Zappalà, Sonia	Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering Impact of Predefined Defects on Device Reliability
Zellner, Christopher	CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
Zeng, Fanpeng	Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Zeng, Zhongming	Strain Evolution and Formation of Interfacial Dislocations in Ion-Implanted 4H-SiC Epilayers during Activation Annealing
Zetterling, Carl-Mikael	Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes
Zhang, Baoguo	Growth of 8 inches SiC single crystal with low BPDs defect
Zhang, Baoshun	Strain Evolution and Formation of Interfacial Dislocations in Ion-Implanted 4H-SiC Epilayers during Activation Annealing
Zhang, Chao-Jun	Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer
Zhang, Chenyu	Successful Development of 12 inch SiC crystal by PVT method
Zhang, Chuang	Low-pressure Mist-CVD technique for Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga₂O₃
Zhang, Endong	Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch Processing Evaluation of Auger recombination coefficient in highly N-doped 4H-SiC under high-level injection conditions
Zhang, Fusheng	Growth of 8 inches SiC single crystal with low BPDs defect
Zhang, Jianfei	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers
Zhang, Jianpei	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Zhang, Jiuyang	(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development
Zhang, Kaixuan	Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron Topography High Quality P-type 4H-SiC Growth by PVT Method Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Zhang, Lei	Low-damage laser slicing technology for bulk GaN
Zhang, Sung-Uk	Comparative Numerical Analysis of Cu Clip and Al Wire Bonding Structures in SiC Schottky Barrier Diodes
Zhang, Xing	The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers Low-damage laser slicing technology for bulk GaN Effects of the number of processing passes on laser slicing of SiC Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers
Zhang, Xuan	Strain Evolution and Formation of Interfacial Dislocations in Ion-Implanted 4H-SiC Epilayers during Activation Annealing
Zhang, Yan	The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor Transport
Zhang, Yibo	Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar
Zhang, Yingxin	SiC Single Wafer Chemical Mechanical Polishing Process Improvements for Throughput and Surface Finish
Zhang, Yuming	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar Study of SiC Thyristors with Integrated Temperature Sensors Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
Zhang, Zhaobo	High-Density Packaging Approaches for SiC Power MOSFET Modules
Zhang, Zheyuan	Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage Bias
Zhang, Zhiwen	Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion Irradiation
Zhang, Zihan	JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs
Zhao, Jianhui	Formation and reduction of surface pits on 4H-SiC epitaxial layer Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers
Zhao, Quanxin	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode
Zhao, Xiangxiang	Homoepitaxy and defect control of 300-μm ultra-thick 4H-SiC layers
Zhao, Yanfei	Dynamic switching benchmark of latest gen SiC MOSFETs for Automotive and Urban Air Mobility power modules Design Space Exploration of SiC Power Module Package via Surrogate Model
Zhao, Zhibin	Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers
Zheng, Shuiyou	Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling Implantation
Zhi, Haizhao	Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET
Zhong, Guanglei	Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates
Zhong, Guofang	Control of SSF Defects in 8-inch SiC Epitaxial Wafers
Zhong, Kailun	Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications
Zhong, Weiliang	Ring Coating Thickness Control for High Quality N type 4H-SiC Epilayers Based on Growth and Doping Kinetic Analysis
Zhong, Yu	Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier Diode Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes
Zhong, Yu	Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes
Zhou, Bailing	Optimization of a 1200V SiC lateral SiC Schottky diode Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication Process
Zhou, Bill	Non-Destructive Optical Detection of Dislocation Defects in N-type SiC Substrate Wafers
Zhou, Huiqin	Development of High-quality 6-inch P-type 4H-SiC Substrates Using Solution Growth
Zhou, Pengwei	Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition
Zhou, Yu	A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner P-Pillar
Zhu, Can	Development of High-quality 6-inch P-type 4H-SiC Substrates Using Solution Growth
Zhu, Jihong	Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction Study
Zhu, Lei	Fabrication of a 1200V SiC Trench MOSFET with an Inverted T-shaped Deep P Junction Based on an 8-inch Platform
Ziegler, Johannes	Fowler-Nordheim current at negative gate bias in SiC MOSFETs High-Temperature H₂- and N₂- containing Surface Conditioning for SiO₂/4H-SiC Interface Optimization
Zielinski, Marcin	Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene growth. Low defectivity epilayers grown on SmartSiC™ engineered substrates
Zignale, Marco	Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs Simultaneous p- and n-type doping carrier profiling of 4H-SiC MOSFETs by Scanning Microwave Impedance Microscopy Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC
Zimina, Daria	Effect of Crucible and Thermal Insulation Porosity on Growth Rate and Nitrogen Incorporation in PVT SiC Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC Crystals
Zimmermann, Leonard K.S.	Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active Spins
Zolnai, Zsolt	Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique
Zsakai, Gyula	4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry (MBIR)
Zumbo, Luca	A study on different SiC MOSFET Edge Termination Ruggedness THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.
Zurek, Dan	Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation Results