Program for Wednesday, September 17th: Talk View

PROGRAM FOR WEDNESDAY, SEPTEMBER 17TH: TALK VIEW

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8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:30-09:15

It Takes a Village: Shaping the Next Era in SiC Technology

Anant Agarwal

09:45-10:15

(Invited) Point defect engineering in SiC to realize highly reliable power devices

Masashi Kato, T. Li, H. Sakane, S. Harada

10:15-10:30

Investigation on Bipolar Degradation caused by In-grown Stacking Fault in 3.3 kV SiC-MOSFET

H. Niwa, T. Tanaka, K. Tojima, H. Amishiro, Y. Kagawa, K. Sugawara, T. Watahiki

10:30-10:45

Impact of threading dislocations on carrier lifetimes in 4H-SiC epilayers

Murata, Asada, Fujie, Kamata, Shiono, Ishibashi, Mabuchi, Tsuchida

10:45-11:00

Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental

Yoda, Sano, Kojima, Onda, Myalitsin, Kakushima, Ohba, Oshiyama, Shiraishi

11:00-11:15

Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in

H. Jayaprakash, M. Belanche, C. Csato, F. Krippendorf, U. Grossner, M. Rueb

11:15-11:30

Investigation of Photoluminescence Emission and Characteristic Wavelength of Various Large-Height Shockley-Type Stacking Faults in 4H-SiC Epitaxial

M. Na, S.-K. Hong, H. Jung, D. Kim, T. Iqbal, C. Oh, D. Jang, W. Bahng

09:45-10:15

(Invited) Comprehensive Study on Theoretical Performance Limit of 4H-SiC Full- and Semi-Superjunction

Seigo Mori, D. Iizasa, Y. Nakano

10:15-10:30

Breaking the performance limits in 4H-SiC semi-superjunction devices through asymmetric pillar

Daisuke Iizasa, Hiroaki Shiraga, Suguru Okuyama, Seigo Mori, Yuki Nakano

10:30-10:45

Impact of Void Formation on Semi-Superjunction SiC Schottky Rectifiers for Trench-Filling-Based Fabrication

Zhou et.al

10:45-11:00

Body diode performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET

Melnyk, Renz, Yildirim, Iosifidis, Cao, Gonzalez, Shah, Gott, Gammon, Antoniou

11:00-11:15

Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET

G. Borca-Tasciuc, R. Ghandi, C. Hitchcock, S. Kennerly, T.-S.P. Chow

11:15-11:30

Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold

Shane Stein, Suman Das, Daniel Lichtenwalner, Sei-Hyung Ryu

13:00-13:15

Solid state defect emitters with no electrical activity in 4H-SiC

Pei Li, Song Li, Péter Udvarhelyi, Bing Huang, Adam Gali

13:15-13:30

Parametrization of Emitter Photoluminescence and Color Center Quantification with Neural Networks

C. Gobert, O. Reichenberger, P. Berwian, P. Evanschitzky, M. Krieger, J. Schulze

13:30-13:45

Interface NIR SPS: Newly observed single photon sources in SiC

Kaneko, Morioka, Takashima, Shimazaki, Mikami, Takeuchi, Mizuochi, Kimoto

13:45-14:00

Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit

Sosuke Iwamoto, Masahiro Hara, Heiji Watanabe, Takuma Kobayashi

14:00-14:15

Advancing Scalable Quantum Control with V2 center in SiC: From Electrical integration to Nuclear Spin Coherent

Vorobyov, Hesselmeier-Hüttman, Kuna, Wrachtrup, Steidl, Ul-Hassan

13:00-13:30

(Invited) Lifetime Assurance of Electric Vehicle SiC Power Modules through Thermal Model-Based Heat Management

Jehwan Lee, Yeongju Koh, Sangchul Shin, Kiyoung Jang

13:30-13:45

Reliability Challenges of SiC MOSFETs Under Continuous Dual-Bias Stress in EV Security Systems: A Lifetime Prediction

Jihong Zhu, Jingjing Cui, Bao Hu, Ming Jiang, Baocheng Yuan

13:45-14:00

Reliability Analysis and Test Results of SiC Baseless Power Module in bidirectional EV-Charging

Stefano Carboni, Andrea Bianchi

14:00-14:15

Room temperature bonding of SiC chip and Cu heat sink substrate

Ryohei Yamauchi, Jun Utsumi, Ryo Takigawa

14:45-15:15

(Invited) Evolution of Extended Defects in Ultra-Thick SiC Epitaxial Layers

Mahadik, Scheiman, Ghezellou, Gallagher, Stahlbush, Ul-Hassan

15:15-15:30

Adverse effects of proton implantation in 4H-SiC epilayers on stacking fault expansion

Kazumi Takano, Yasuyuki Igarashi, Yohsuke Matsushita, Takuya Morita

15:30-15:45

Application of UV photoluminescence spectrum mapping for stacking faults that were expanded from the in-grown stacking fault on a thick 4H-SiC

Kazumi Takano, Yasuyuki Igarashi, Yohsuke Matsushita, Takuya Morita

15:45-16:00

Structural Transformation Within Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layer and Substrate

Na, Hong, Jung, Kim, Iqbal, Oh, Jang, Bahng, Eun, Seo, Chae, Park, Park

16:00-16:15

Giant Etch Pit Formation and Origin Formed at the Typical Triangular Stacking Fault Area on 4H-SiC Epitaxial Layer Surface by KOH

Hong, Na, Jung, Kim, Oh, Jang, Bahng, Eun, Chae, Park

14:45-15:15

(Invited) Advances in Laser Annealing for Ohmic Contact Formation in Thin 4H-SiC Power Devices

Rascunà et.al

15:15-15:30

Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in

Matsuoka, Soda, Miyazaki, Tanioka, Tojima, Kiyoi, Kagawa, Nitta

15:30-15:45

Reliable and Manufacturable 1200V SiC Planar MOSFET with Leading-Performance Ron,sp 1.95mΩ·cm²

Siddiqui et.al

15:45-16:00

Impact of Nitric Oxide Annealing on Interface Degradation in SiC MOS Devices under Positive Bias Temperature

Chien, Wang, Chand, Lim, Wang, Fidler, Schmid, Bera, Chung, Gong, Singh, Yeo

16:00-16:15

Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H₂/Ar annealing

Keiji Hachiken, Takuma Kobayashi, Hiroki Fujimoto, Masahiro Hara, Heiji Watanabe

16:30-18:30

Numerical Modeling of Impurities and Defects in 4H-SiC

Xuefeng Han, Sheng'Ou Lu, Lingling Xuan, Anqi Wang, Xiaodong Pi, Deren Yang

Epitaxial Growth and Characterization of 4H-SiC layer on C-face and Si-face substrates

Nania, Anzalone, Raciti, Vento, Piluso, Calabretta, Severino

SmartSiC™ engineered substrate: a robust solution to SiC power devices bipolar degradation

E. Guiot, W. Schwarzenbach, F. Allibert, J. Leib, G. Philippe

Growth of 8 inches SiC single crystal with low BPDs defect

F. Zhang, Y. Shao, Y. Wu, B. Zhang, D. Shi, M. Yang, H. Hu, X. Hao

Growth Simulation and Composition Control of SiC Crystal

Zhenzhou Yuan, Qiangqiang Wang, Shengping He, Xu Pang, Xinyu Liu

Application of a fine grain 3C-SiC powder source material during PVT growth of 4H-SiC crystals

Strüber, Arneberg, Straub, Greulich-Weber, Grazzi, Wellmann

SiC crystal growth simulations using the minimal atomic energy deposition method

Alexander Reichmann, Lorenz Romaner

growth and characterization of “IsoPure” epitaxial layers for quantum applications

B. Kallinger, C. Gobert, M. Titl, R. Karhu, J. Köhler, J. Erlekampf

Two-Step Electrochemical Mechanical Polishing of Silicon Carbide : Decoupled Anodic Oxidation and CMP for Enhanced Removal

Doyeon Kim, Hanchul Cho, Taekyung Lee, Junggyu Kim, Jungwoo Choi

Tailored Interfaces on 4H-SiC via CVD Graphene Growth and Molybdenum Silicide Engineering

Darrigo, Zappalà, Scuderi, Domenico, Privitera, Rimini, Sciuto

Optimization of SiC:V deposition on on-axis SiC substrates for semi-insulating templates for graphene

Zielinski et.al

Multiscale Modeling of SiC Vapor Phase Transport Growth on Off-Axis 4H-SiC: Influence of Thermal Conditions and Step

K. Kayang, A. Kumar, Z. Chen, B. Raghothamachar, M. Dudley, D. Gersappe

Effect of Crucible and Thermal Insulation Porosity on Growth Rate and Nitrogen Incorporation in PVT

Andrey Smirnov, Maxim Bogdanov, Laura Ristić, Daria Zimina, Alex Galyukov

Optimization of seed crystal stability at the initial growth stage depending on heating ramp rates and gas flow channels of SiC source powder for growth of 8-inch n-type 4H-SiC single

Lee, Lee, Kim, Park, Choi, Kim, Ku, Kim, Lee

Modeling SiC crystal growth and crucible etching in the PVT furnace

Z. Ramadan, L. Taucher, R. Hammer, N. Martirosyan, S. Lone, L. Romaner

The influence of the diameter of the inner guide tube and heating ramp rates on seed crystal at the initial growth of 8-inch n-type 4H-SiC single crystals using PVT

Kim, Lee, Lee, Park, Choi, Kim, Ku, Kim, Lee

Prediction of wafer warpage in 200mm 4H-SiC substrates during subsequent processing by residual stress

Paul Wimmer, Magdalena Lang, Firas Faisal, Tobias Erlbacher, Christian Kranert

Effects of Rotational Stacking Faults in Electronic Structure of 4H-SiC Monolayer under Electric Field Stress: A DFT-Based Molecular Dynamics

John Angelo Capile, John Paul Legaspi, Darwin Nhed Baquiran, Rengie Mark Mailig

Effect of DLTS parameter on the characterization of deep level defects in 4H-SiC Schottky Barrier

L. Luo, Y. Zhong, X. Yang, Q. Zhao, P. Cui, Y. Cui, M. Xu, J. Han

Micropipes in SiC die Observed by Molten KOH Etching

Vento, Piluso, Calabretta, Nania, Raciti, Anzalone, Severino

SiC bulk inspection: digital defect traceability from puck to epi-ready wafers

Frédéric Falise, Caroline Chèze, Ivan Orlov, Slobodan Mitic, Michael Schöler

Photoluminescence study on micropipes in SiC substrates for improving comprehensive full-wafer defect detection

Hirofumi Hoshida, Shota Fujiki, Mari Yamamoto, Takeshi Mitani, Junji Senzaki

Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates

David Lynch, Gregory Keaton, Chris Lee, Alex Bean

Application of spectroscopic ellipsometry in silicon carbide technology

Gelnarova, Fordos, Halagacka, Liu, Toberny, Kostelnik, Curgali, Postava

4H-SiC Power MOSFET Performance Prediction and Defect Monitoring with Mercury Probe Capacitance-Voltage (MCV)/Current-Voltage (MIV) and Model Based Infrared Reflectometry

Vigh et.al

A Comprehensive Study of Buffer Layer Thickness and Doping Effects on SiC Defect Density

Eleonora Acerbi, Nils Steller, Firas Faisal

EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC

Katarzyna Stokeley, Zareena Hassanbee, Louise Bailey, Andrew Newton

Depth profiling of boron-related minority traps in n-type 4H-SiC by junction DLTS measurements

Orazio Samperi, Lasse Vines, Anders Hallén

Impact of Stacking Fault-Induced Carrier Lifetime Reduction on Static and Dynamic Characteristics of 4H-SiC

Lee, Kang, Kim, Jung, Jang, Oh, Kim, Na, Kim, Bahng, Hong, Koo

Non-destructive identification of pure threading screw and mixed dislocations in SiC epitaxial wafers: Their impact on surface pit

Sun, Takahashi, Matsubara, Kawase, Seo, Murayama, Kutsukake, Ujihara, Harada

Strain Evolution and Formation of Interfacial Dislocations in Ion-Implanted 4H-SiC Epilayers during Activation

Xuan Zhang, Jiaxu Gao, Baoshun Zhang, Zhongming Zeng

Dislocation Types Identification in 4H-SiC by Synchrotron Rocking Curve X-Ray Diffraction Imaging (RC-XRDI): A Signature-Based

Estiri et.al

Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices

Li et.al

Silicon Carbide Epitaxial Defect and Substrate Defects Analysis by Dynamic Photoluminescence and X-ray

Dong Lee, Kirby Schmidt, Shanthi Subramanian, Albert Burk, Andy Souzis

Demonstration of ALD SiO₂ as gate oxide in the 1.7kV SiC UMOSFET for high-power and embedded CMOS circuit

Hung, Rabinzohn, Vozny, Ivanova, Söderlund, Hsiao, Kuo

Impact of Re-oxidation on Bias-induced Threshold Voltage Instability of SiC Power MOSFETs

Woosung Park, Chang-Ju Lee, Heejin Kwon, Jaegil Lee

Impact of ALD Oxidants and Deposition Temperature on Electrical Characteristics of Al₂O₃/SiO₂/SiC

Harsha Vardhan Manchineni, Andre Wachowiak, Thomas Mikolajick

Analysis of backside metal contact resistance on low-resistivity polycrystalline in 4H-SiC bonded

Kobayashi, Ishikawa, Higashi, Sezaki, Okamoto, Harada, Kojima

Electrical Performance of 4H-SiC MOSFETs with Different Gate Oxide Processes

W. Yu, C. Hung, W. Lin, W. Lin, T.S. Rawat, Y. Hsiao, T.-L. Wu, H. Kuo

Effects of Annealing Temperature dependent Electrical Characteristics of AlN/SiC Diodes

Y.-J. Kim, J.-H. Kim, S.-H. Park, C.-J. Park, C.-M. Zetterling, S.-M. Koo

Development of advanced Ni/4H-SiC contact modules by using laser annealing

Thuries, Opprecht, Chehadi, Talbi, Kerdilès, Halty, Biscarrat, Pujade, Godignon

Damage-free Dicing of SiC Substrate Using High-Pressure SF6 Plasma – Time Dependence of Processed Groove Profile

Yuken Matsumura, Shunto Iden, Jumpei Yamada, Daisetsu Toh, Yasuhisa Sano

Surface Morphologies and Microstructure of Ni and Ni/Nb ohmic contacts on 4H-SiC

A.D. Nguyen, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

Wide temperature range analysis of ITO/4H-SiC Schottky diodes with applications in UV photodetection

Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, Iuliana Mihalache

Reduction of Edge Chipping in SiC Wafers Using Contour Edge Grinding

Y. Shin, M. Cho, B. Kim, B. Helmreich, S. Adeyemi, S. Jung, K. Han

Effects of the number of processing passes on laser slicing of SiC

J. Zhang, B. Li, Q. Chen, L. Che, X. Zhang, H. Fan, R. Wang, X. Chen

Fabrication and evaluation of 6 inch SiC-based CMOS inverter in South Korea

Kim, Park, Kang, Han, Yang, Choi, Kang, Rommel, May, Schraml, Shin

BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser

Shunya Hirano, Hyuk Kim, Satoru Takahashi, Shuzo Masui, Noboru Ohtani, Kozo Abe

Low-Defect Ni/Ti Composite Backside Ohmic Contact for thinned 4H-SiC Devices Formed by 355 nm UV Laser

Songlin Yang

Dopant activation and compensation in p-type 4H-SiC formed by Al⁺ implantation into V-doped semi-insulating

Hiroya Adachi, Kyota Mikami, Tsunenobu Kimoto, Mitsuaki Kaneko

On the process optimization of ALD-deposition of SiO₂ for SiC MOS processes

Arne Benjamin Renz, Michael Powell, Andrew Newton, Peter Michael Gammon

NiSi alloy/4H-SiC reaction and silicide formation under excimer laser annealing for ohmic contact

Badalà et.al

First Investigation of N-i-P diodes implemented on SiC P⁺ Substrates

Gammon, Iosifidis, Yildirim, Yuan, Antoniou, Torres, Cheng, Renz

Molecular Dynamics Investigation of Radiation-Induced Damage and Mechanical Behavior in Amorphous

Ikhwan Shin, Seungsoo Lee, Myung Eun Suk

Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications

Kailun Zhong, Vamsi Mulpuri, Vishank Talesara, Siddarth Sundaresan

Characterization of SiO₂/4H-SiC systems using time-of-flight elastic recoil detection analysis

M.A. Yildirim, M. Sharpe, C.D. Mcaleese, P.M. Gammon, S.L. Pain, A.B. Renz

Demonstration of Hybrid-Bonded, Single-Chip 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic

Zhaowen He, T. Paul Chow, Giorgian Borca-Tasciuc

THE EFFECT OF CHARGE CONTAMINATION ON THE BV ROBUSTNESS OF SIC POWER DEVICES.

Cosentino, Zumbo, Realmuto, Zanetti, Guerrera, Scuderi, Vitanza, Saggio

Impact of Active Cell Geometry on the Static Performance of 10kV 4H-SiC JBS (Junction Barrier Schottky)

Hojung Lee, Justin Lynch, Stephen Mancini, Skylar Deboer, Woongje Sung

Development of device failure prediction method using multi-modal analysis technique

Junji Senzaki, Atsushi Shimozato, Tsutomu Osanai, Junichi Nishino

High temperature operating characteristics of 4H-SiC Active Pixel Sensors

Y. Hata, T. Meguro, A. Takeyama, T. Oshima, K. Kojima, Y. Tanaka, S.-I. Kuroki

Electrical Characterization and Modeling of IC Gen. 12 4H-SiC JFETs

Philip Neudeck

Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic

Mancini, Chen, Jang, Binder, Floyd, Kaplar, Flicker, Attcity, Song, Sung

Design and Optimization of SiC-based CMOS FinFET for Logic Circuits in High-Temperature Applications

T.S. Kwon, Y.J. Kim, H.W. Kim, Y.J. Yoon, S.Y. Woo, J.H. Seo

Gate leakage imaging of silicon carbide power MOSFETs under negative-bias gate stress

Andrei Konstantinov, Sergey A. Reshanov, Jang-Kwon Lim

Designing and Simulations of 4H-SiC Neutron Sensors for Boron Neutron Capture Therapy

Vu Thi Ha, Tatsuya Meguro, Kazutoshi Kojima, Hiroki Tanaka, Shin-Ichiro Kuroki

Impact of SiC MOSFET Topologies and Gate Runner Design on On-Resistance and Switching Performance

Minseok Kang, Tony Witt, Susanna Yu, Brian Patterson

An Ultralow Forward Voltage SiC Lateral Pinched Barrier Rectifier (LPBR)

T.-F. Chang, F.-J. Hsu, H.-T. Hung, J.-W. Hu, C.-T. Yen, C.-F. Huang

Fabrication of a 1200V SiC Trench MOSFET with an Inverted T-shaped Deep P Junction Based on an 8-inch

Lei Zhu, Gang Chen, Xixi Luo, Gaoxu Wang, Yuxi Wan

Enhancing the Short-Circuit Capability of Embedded-SBD 4H-SiC MOSFETs through Ni Silicide Formation

Junseong Kim, Sungmo Koo, Hyemin Kang

Properties of SiC Nanostructures Grown by Mixed-Source Hydride Vapor-Phase Epitaxy Method

Kim, Kim, Mun, Park, Kwon, Kim, Jeong, Jeon, Lee, Yang, Ahn

Growth of 2H–Si microneedle by Plateau-Rayleigh Instability (PRI) Using Al Nanowires

Kim, Kim, Mun, Park, Kwon, Kim, Jeong, Jeon, Lee, Yang, Ahn

Optimization of Source-connected Field Plate in AlGaN/GaN HEMTs towards high-power and high-frequency Operations: A Simulation

Tae-Sung Kim, Jae-Hun Lee, Chae-Yun Lim, Young-Hyun Won, Hyun-Seok Kim

A Simulation Study of Electronic Device Designs for the Control of Silicon Vacancies in 4H-SiC as Spin

F.J. Magerl, C. Pixius, J. Förthner, P. Berwian, E. Bär, J. Schulze

Towards realization of hybrid spin networks in solid-state system

Junghyun Paul Lee

Ohmic p-GaN Gate HEMTs with Al₂O₃/SiO₂ T-gate Dual Insulator Layers

Gokhan Atmaca, Ho-Young Cha

Towards a Fully Integrated 4H-SiC a-Plane Quantum-Chip – Transistors and Light Emitters

J. Schwarberg, J. Dick, M. Rommel, A. May, B. Kallinger, R. Kammel, J. Schulze

Fabrication of ultrathin freestanding 4H-SiC layers by doping-dependent monolithic electrochemical

André Hochreiter, Konstantin Unruh, Michael Krieger, Heiko Weber

Investigation on Surface Step Arrays and Epitaxial Growth of β-Ga₂O₃ on Miscut (0001) Sapphire Substrates Prepared by Molecular-Beam

Hayyak, Ngo, Vuong, Iqbal, Hong, Kim, Park, Jeon

Atomic-Scale Analysis of Twin Defects in β-Ga₂O₃ Single Crystals Grown by the EFG Method

M.-H. Choi, S.-M. Shin, Y.-J. Kim, W.-J. Lee, S.-Y. Bae, Y.-J. Shin, S.-K. Hong

Diamond Growth on 4H-SiC Substrates: Influence of Surface Roughening and Polarity

Woo, Choi, Hong, Park, Jeong, Bae, Shin, Nam

Heteroepitaxial Diamond Growth on ALD-Al₂O₃/4H-SiC via MPCVD

Park, Nguyen, Woo, Phung, Nam, Shin, Jeong

Novel Strategy for Deterministic Implantation by Ultra-Thin Silicon Carbide Membrane Detector

E. Sangregorio, A. Crnjac, A. Muoio, S. De Luca, L. Calcagno, F. La Via

A Comparative Investigation of NiO/Ga₂O₃ PN Diodes: Effects of Rapid Thermal Annealing on Electrical and Defect

S.-H. Park, S.-Y. Moon, Y.-J. Kim, C.-J. Park, J.-H. Kim, S.-M. Koo

Influence of doping on heavy-ion induced color centers in 4H-SiC

Goncalves de Medeiros et.al

Characterization of color centers at SiO₂/SiC interfaces: Energy level identification and discussion of their

Onishi, Nakanuma, Toyama, Tahara, Kutsuki, Hara, Watanabe, Kobayashi

Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of cryogenic

Lukas R. Farnbacher, Jakob Breuer, Fabian Dresel, Jürgen Leib, Bernd Eckardt

Understanding the Influence of the Different Parameters on the Dynamic VSD Behaviour in SiC MOSFETs during Power Cycling

M.L. Mysore, M. Goller, R.-V. Chavda, M. Alaluss, J. Lutz, T. Basler

Resonance Damping in 1200V Power Modules Using Planar SiC MOSFET Devices for 200 kW Output

P.S.H. Ying, D. Tsai, A. Ma, A. Kamosawa, S. Miyaoka, N. Machida, G. Wu, J. Wu

Comparison of Static and Dynamic Characteristics of SiC MOSFETs with Respect to TO-247 and Hermetic Package

Yeonju Lee, Hyunyoung Park, Hyemin Kang, Hyun-Cheol Bae

Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules

Jan-Hendrik Peters, Michael Hanf, Sven Clausner, Nando Kaminski

Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts

Masaki Takahashi, Zhongchao Sun, Stig Munk-Nielsen, Asger Bjørn Jørgensen

Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress

T.-P. Lu, K.-Y. Lee, S.-M. Koo, R.-C. Wu, P.-C. Liao, C.-W. Yeh, Y.-P. Lee

Accelerated Bipolar Degradation Robustness (aBDR) Evaluation in SiC MOSFETs

Davood Momeni, Hongchao Liu

Discrepancy of Datasheet Measurements in SiC MOSFETs in Bare Dies and TO-247 Packaged Discrete

Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Olayiwola Alatise, Martin Kuball

09:15-09:45 Break (30min)

11:30-13:00 Lunch (90min)

14:15-14:45 Break (30min)

16:15-16:30 Break (15min)