Program for Tuesday, September 16th: Talk View

PROGRAM FOR TUESDAY, SEPTEMBER 16TH: TALK VIEW

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8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:30-09:15

4H-SiC as Material for Electricity Infrastructure

Hidekazu Tsuchida

09:45-10:15

(Invited) 200 mm 4H-SiC Substrate Status and 300 mm 4H-SiC Substrate Development

G. Chao, Y. Pan, Z. Shi, X. Ning, X. Yang, J. Zhang, H. Peng

10:15-10:30

Quality Improvement in 200mm Silicon Carbide Substrate

X. Xu, H. Li, G. Dhanaraj, E. Velasco, C. Laing, S. Subramanian, R. Rengarajan

10:30-10:45

Mechanisms and Modeling of Degradation of Graphite Crucible and Thermal Insulation During PVT Growth of SiC

Smirnov, Bogdanov, Ristić, Zimina, Galyukov, Kantor, Valek

10:45-11:00

Efficient Thermal Field Optimization of Physical Vapor Transport Simulations for Silicon Carbide Single Crystal

L. Taucher, Z. Ramadan, R. Hammer, N. Martirosyan, S. Lone, L. Romaner

11:00-11:15

Reactive Infiltration SiC Crucibles Unlock Macrodefect Mitigation in 2-Inch SiC Solution Growth

S. Kawanishi, T. Mitani, S. Ashimoto, D. Chaussende, T. Yoshikawa

11:15-11:30

Reconstruction of PVT-SiC Growth Setup to Simultaneously Achieve High Material Yield, High Growth Rate, and Large Crystal

Daisuke Nakamura, Shin-Ichi Nishizawa

09:45-10:15

(Invited) TCAD-Driven Design and Analysis of Advanced 3D SiC MOSFET Structures

Luca Maresca

10:15-10:30

Origin of high mobility in 4H-SiC FinFETs through theoretical analysis of electron scattering

Shion Toshimitsu, Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto

10:30-10:45

FinFET Effect of Vertical-channel Fin-SiC MOSFET

Tomoka Suematsu, Haruka Shimizu, Digh Hisamoto, Takeru Suto, Yuki Mori

10:45-11:00

Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall

Suman Das, Shane Stein, Daniel J. Lichtenwalner, Sei-Hyung Ryu

11:00-11:15

Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and its relation with

Matacena, Maresca, Borghese, Riccio, Irace, Breglio, Daliento

11:15-11:30

Comparison of Ramp- and ac-based C-V Methods for Characterization of SiC Power MOSFETs

Ivana Kovacevic-Badstuebner, Anja Katerina Brandl, Michel Nagel, Ulrike Grossner

13:00-13:30

(Invited) Smart Cut™ for Wide Bandgap Semiconductors: Enhancing SiC’s Potential

Widiez, Gelineau, Huet, Troutot, Rolland, Das, Royer, Biscarrat, Godignon

13:30-13:45

Characterization of Al-Gate MOS Capacitor on Thermally-Oxidized 3C/4H Hybrid Polytype-Heterostructure Si-Face SiC(0001) Wafer Fabricated by Simultaneous Lateral Epitaxy (SLE)

Sakuraba, Oki, Watanabe, Sato, Morita, Ueno, Sato, Nagasawa, Watanabe, Suemitsu

13:45-14:00

Key Mechanisms of Laser-Based Splitting and Dicing of 4H-SiC Wafers

Hanan Mir, Grigorios Boulogiannis, Kai Schillinger-Engel, Fabian Meyer

14:00-14:15

Comparison of Mo, Mo-carbide and Mo-silicide Schottky contacts on 4H-SiC

Vivona, Zignale, Votadoro, Di Franco, Greco, Firoenza, Giannazzo, Roccaforte

13:00-13:15

In-situ measurement of the gain stage of a SiC JFET operational amplifier under gamma ray

Yamamoto et.al

13:15-13:30

Improvement of Single-Event Gate Rupture tolerance by terraced gate 4H-SiC DMOSFET

Hiramastu et.al

13:30-13:45

Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Radiation and High Drain Voltage

Z. Song, Y. Tian, Z. Zhang, S. Xu, X. Fan, Y. Yu, J. Wei, S. Liu, W. Sun

13:45-14:00

Channel Length Effects on Threshold Voltage Instability in Gamma-Irradiated 4H-SiC PMOSFETs

Chuan-Han Chen, Cheng-Shu Chang, I-Chen Tsai, Der-Sheng Chao, Bing-Yue Tsui

14:00-14:15

Isolation of cumulative heavy-ion induced gate degradation effects within a commercial 4H-SiC double trench

Kotagama, Renz, Melnyk, Yuan, Kilchytska, Flandre, Shah, Antoniou, Gammon

14:45-15:15

(Invited) The mechanisms of Defect Replication, Propagation, Modification, Nucleation and Multiplication in 4H-SiC PVT-grown Substrates and CVD-grown Homo-epitaxial

Michael Dudley, Z. Chen, S. Hu, B. Raghothamachar

15:15-15:30

Synchrotron X-ray topography analysis of low angle grain boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC

Zhang et.al

15:30-15:45

Revisiting the (4,1) Frank-Type Stacking Fault in 4H-SiC: Extrinsic or Intrinsic Stacking Fault?

Hong, Na, Jung, Kim, Iqbal, Oh, Jang, Bahng, Lee, Lee, Shin, Ku, Chae, Park

15:45-16:00

Polytype analysis of 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates by Raman

Masashi Kato, Takuhiro Hasegawa

16:00-16:15

Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport

Chen et.al

14:45-15:15

(Invited) Technology Trends of performance improvement in SiC MOSFETs: The Impact of Trench and Super Junction Structure

Hiroshi Kono, K. Tanaka, T. Kiyosawa, T. Suzuki, K. Sano

15:15-15:30

Effect of Dynamic AGE-ing Process on the Electrical Characteristics of 3.3kV SiC MOSFETs

Konishi, Watanabe, Shimizu, Mori, Kaneko, Dojima, Mihara, Shima

15:30-15:45

High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant

Shariare Hossain Rabbi, Justin Lynch, Stephen A. Mancini, Woongje Sung

15:45-16:00

Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10

Pocaterra et.al

16:30-18:30

Analysis of Axial Resistivity During SiC Crystal Growth by PVT Method

L. Xuan, X. Xie, S. Lu, A. Wang, L. Xu, X. Pi, D. Yang, X. Han

Homoepitaxy and defect control of 300-μm ultra-thick 4H-SiC layers

Rong Wang, Xiangxiang Zhao, Deren Yang, Xiaodong Pi

Development of high concentration uniformity epitaxial growth on 200 mm 4H-SiC wafers

Weining Qian, Feihong Huang, Jinan Li, Gan Feng, Jianhui Zhao, Junyong Kang

Ring Coating Thickness Control for High Quality N type 4H-SiC Epilayers Based on Growth and Doping Kinetic

Jiahui Wang, Weiliang Zhong, Le Yu, Zheyang Li, Rui Jin

Control of SSF Defects in 8-inch SiC Epitaxial Wafers

Zehua Wang, Guofang Zhong

Heteroepitaxial Growth of CVD SiC on Graphene Buffer Layers Formed on SiC wafers

Lee, Kim, Kim, Shin, Won, Lee, Lee, Lee, Son, Youn, Park, Kwon, Lee

Improved Particle Removal and Sub-Nanometer Roughness Control in 4H-SiC Wafers Using PVA Brush

Y.-J. Ra, J.-H. Lee, Y.-J. Gye, E.-S. Choi, S.-P. Jung, J.-G. Park, T.-G. Kim

An In-Situ Study of Al Effects on Step Structures under Diffusion Controlled 4H-SiC Solution Growth

Ryunosuke Hashimoto, Masakatsu Hasegawa, Sakiko Kawanishi

Effects of Post-Deposition Annealing on Temperature dependent Electrical Characteristics of SnO₂/4H-SiC Schottky Barrier

C.-J. Park, J.-H. Kim, Y.-J. Kim, S.-H. Park, K.-Y. Lee, S.-M. Koo

Comprehensive Analysis of Carrier Lifetime and Deep-Level Traps in 4H-SiC: Impact of Epitaxial Growth Temperature and

N. Steller, C. Wißgott, E. Acerbi, B. Kallinger, F. Faisal

Thick SiC-4H epitaxy perspectives

M. Mauceri, S. Allegri, V. Lafage, M.L. Alonzo, S. Preti

The effect of the Si partial pressure depending on SiC powder stacking configurations on the heat treatment of 4H-SiC

Song, Kim, Kim, Park, Park, Jung, Kim, Kovács, Chung, Lee, Shin

Improvement of SiC crystal quality and residual stress by a seed adhesion process employing carbon-based adhesive and

Kim, Song, Park, Kim, Park, Jung, Kim, Lee

Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single

Shota Tani, Msato Urakami, Wataru Saito, Shin-Ichi Nishizawa

SiC Single Wafer Chemical Mechanical Polishing Process Improvements for Throughput and Surface

Ian Currier, Ruijie Li, Yingxin Zhang, Chen Liu, John Givens

SIMS Profiling of 3D SiC Mesas: Top and Sidewall Analysis

Paweł Michałowski

Improvement of gate-source short failure by suppressing abnormal polySi layer in 1200V SiC MOSFETs

Haeri Kwon, Hyoungju Noh, Jaewon Jang, Sangwan Kim

Non-Destructive Optical Detection of Dislocation Defects in N-type SiC Substrate Wafers

Yuzhong Chen, Bill Zhou

Advanced defects study and monitoring in new generation 4H-SiC devices

Piluso et.al

Investigation of Mechanical Stress and Warpage in 200mm Silicon Carbide Wafers: Implications for Production

Lin Dong, Qiqi Wu, Stefan Nufer

Multi-channel defect inspection for 4H-SiC epitaxial wafer and integrated defect classification

Masaki Hasegawa, Koichi Endo, Shinji Yokogawa, Junji Senzaki

Non-contact Micro-scale Imaging Analysis of Electrically Active Defects Causing EOL Failures in Merged PiN Schottky

Faisal et.al

Formation and reduction of surface pits on 4H-SiC epitaxial layer

W. Qian, F. Huang, J. Li, G. Feng, Y. Sun, J. Zhao, J. Kang

Optical localization of passivation discoloration using admittance spectroscopy

Marvin Gloth, Benjamin Weigt, Tobias Erlbacher

Characterization of 3C-SiC thick epitaxial layers grown on off- and on-axis 4H-SiC substrate

Jun Fujita, Kongshik Rho, Masashi Kato

Thin transition zone measurement in silicon carbide epi structures by Fourier transform infrared reflectometry and point contact current-voltage

Najbauer, Sinkó, Biró, Durkó, Basa, Rommel, Karhu, Kallinger

Insight into the Features and Characteristics of Stacking Faults on 129 4H-SiC Epitaxial Wafers Investigated Using Wafer-Scale Photoluminescence Mapping and Spectra Analysis Combined with HAADF

H. Jung, M. Na, S.-K. Hong, D. Jang, C. Oh, D. Kim, W. Bahng

Challenges in 1SSF detection in 4H-SiC epilayer and related failure

Calabretta et.al

Impact of ICP-RIE Process-Induced Deep-Level Defects on Carrier Lifetime in 4H-SiC Epitaxial layers

M. Kim, J.-S. Choi, G.-H. Lee, Y.J. Park, S. Kim, H.-K. Shin, S.-M. Koo

Investigating the temperature dependence of charge carrier lifetime in low-doped n-type 4H-SiC

Zimo Yuan, Alex Metreveli, Misagh Ghezellou, Jawad Ul-Hassan, Anders Hallén

Analysis of Overlapping Capacitance Transients in DLTS and MCTS for Commercial SiC Power Diodes

Für, Goncalves de Medeiros, Belanche Guadas, Natzke, Mendes Martins, Grossner

Chelation-Assisted Cleaning for Effective Removal of Al and Mn Contaminants on 4H-SiC Wafer

Yeon-Je Gye, Yoon-Ji Ra, Eun-Suck Choi, Sung-Pyo Jung, Jin-Goo Park, Tae-Gon Kim

Evaluation of transmission spectra of vanadium-doped 4H-SiC substrates by optical transmittance

Zenji Fujihisa, Dai Inoue, Shunya Sakane, Haruhiko Udono

Characterization of Stress and Defects in 4H Silicon Carbide Wafers by Scanning Infrared

Markus Stoehr, Devapriyo Mithun, Martin Herms

Inhomogeneity of recombination lifetime in 4H-SiC epitaxial layers and surface passivation

Krisztián, Rommel, Szabó, Korsós, Wißgott, Weber, Kallinger, Karhu

Effects of Conditioning Disc Designs on the Tribological, Vibrational, Thermal, Kinetic, Pad Micro-Textural and Pad Wear Characteristics of Silicon Carbide CMP

Lagudu, Mooney, Wang, Schoenhofen, Sampurno, Borucki, Philipossian, Bea, Yang

Effects of Thermal and CVD Gate Oxides on Dielectric Properties and Sidewall Capacitance in SiC Trench MOS

Hyung-Jin Lee, Hong-Ki Kim, Jae-Gil Lee

Improved Silicide Formation in Vertical 4H-SiC JFET via Double Spacer Process

Gihoon Park, Yubin Park, Dongwook Byun, Yongwoon Lee, Youngbin Im

Critical Wafer Processes for SiC Device Fabrication

Dave Thomas, Chris Jones, Richard Barnett, Douglas Macfarlane, Anthony Barker

Decoupled Plasma Nitridation of SiC surface for Interface States Density reduction in 4H-SiC MOS

Fiorenza et.al

Impact on SiC/SiO₂ interface by N₂/H₂ high temperature pretreatment and SiO₂ Deposition

Heng Wang, Yangming Du, Ji Shu, Pengwei Zhou, Yingchen Yang, Kevin.J Chen

Utilizing SiO₂ Reflow for Corner Rounding to Prevent Cracking in Passivation Layers Above 500 °C

Julien Koerfer, Alexander May, Mathias Rommel, Oleg Rusch, Michael Jank

Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide

Shao-Yuan Huang, Chen-Hang Wu, Chao-Jun Zhang, Chao-Chang Arthur Chen

SiO₂/SiC Interface Engineering via Low-temperature NO Oxynitridation of SiC Surface Feasible with Si Device Fabrication

Takuji Hosoi

Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC

E. Sangregorio, F. Mazzamuto, C. Sohl, L. Kim, C. Dou, C. Bongiorno, F. La Via

Exploring Backside Contact Formation on Bilayer SiC Engineered Substrates Using Nanosecond Laser

G. Gelineau, M. Opprecht, N. Troutot, D. Das, S. Kerdiles, S. Huet, J. Widiez

Effect of Al₂O₃ and HfO₂ Interfacial Layers on Leakage Current in 4H-SiC MIS Diodes

Kang, Park, Kim, Kim, Choi, Lee, Park, Shin, Oh, Koo

Improvement in On-Resistance of 1200 V 4H-SiC VDMOSFETs using SmartSiC™ Wafers

S. Rathi, L. Laborie, Y. Qi, A. Murphy, M. Bell, R. Young, D. Clark

The effect of different pulse widths on the laser slicing of 8-inch 4H-SiC

H. Fan, X. Zhang, B. Li, L. Che, Q. Chen, J. Zhang, R. Wang, X. Chen

UV Laser Annealing Effects on Highly Implanted 4H-SiC Epilayers

Perera et.al

Surface engineering of the 4H-SiC SiO₂/SiC interface by combining atomic layer deposition and atomic layer

M.A. Yildirim, J. Michael, P.M. Gammon, M.J. Powell, A. Newton, A.B. Renz

Channeling ion implantation along the <0001> direction in 4H-SiC: difference in the Si- and C-faces

Masashi Kato

4H-SiC p⁺/n diodes as environment to modify ⁷Be radioactive decay time

Canino et.al

Effect of energy injection on the interfacial structure and mechanical behavior of Si/Al: A molecular dynamics

Ji Hwan Kim, Hyoung Hun Lim, Myungeun Suk

Optical pump-terahertz probe spectroscopy for measuring 4H-SiC carrier lifetime through complex surface

Iosifidis et.al

Dynamic Current-Voltage Behavior of SiC Power MOSFETs

Michel Nagel, Anja Katerina Brandl, Ivana Kovacevic-Badstuebner, Ulrike Grossner

A Methodology for Channel Mobility Extraction in SiC Vertical Power MOSFETs

Chien, Wang, Chand, Bera, Yeo, Voo, Chung, Gong, Singh, Yeo

Design of Robust Edge Termination Applied to 4.5kV SiC SBD Embedded MOSFET Against Humidity

D. Dansako, T. Abe, K. Miyazaki, T. Tanioka, Y. Kagawa, T. Nitta

A Comparative Analysis of Proton Irradiated 1.2 kV SiC Edge Termination Test Group

Sangyeob Kim, Gyuhyeok Kang, Dusan Baek, Ogyun Seok

Optimization of a 1200V SiC lateral SiC Schottky diode

Zhaoxue Yuan, Viren Kotagama, Bailing Zhou, Peter Gammon, Marina Antoniou

Impact of optical phonon scattering on Inversion Layer Mobility in 4H-SiC p-channel lateral MOSFETs

J.-H. Kim, Y.-H. Cho, J.H. Moon, H.W. Kim, S.-H. Park, S.-M. Koo

5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors

Meguro, Hachimata, Takeyama, Ohshima, Tanaka, Kojima, Kuroki

Fowler-Nordheim current at negative gate bias in SiC MOSFETs

Dick Scholten, Johannes Ziegler, Wolfgang Feiler

Advanced Simulation Methodology of Switching Performance and Reverse Recovery Effects of SiC MOSFET and Influence of Parasitic Components on Simulation

D. Zurek, M. Klement, J. Lehocky, P. Rehlaender, J. Guitart, K. He, J. Victory

Experimental analysis of 4H-SiC CMOS NOT logic gate down to 100K

Di Benedetto, Rinaldi, Rommel, May, Baier, Liguori, Rubino, Licciardo

4H-SiC CMOS D-type Flip-Flop Circuits for Logic Circuits in Harsh Environments

Ozaki, Meguro, Maeda, Sezaki, Takeyama, Ohshima, Kojima, Tanaka, Kuroki

Impact of Edge Termination Structure and Length on Switching Characteristics of SiC MOSFETs

Hyunyong Park, Yeonjun Kim, Hyemin Kang

Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET

R.-C. Wu, K.-Y. Lee, P.-C. Liao, T.-P. Lu, P.-C. Liao, J.-C. Chu, C.-L. Liu

TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs

Hemant Dixit, Jeff Joohyung Kim, Suman Das, Daniel Lichtenwalner, Sei-Hyung Ryu

Study of SiC Thyristors with Integrated Temperature Sensors

Y. Lei, C. Shuhao, H. Da, L. Xuesong, H. Tongxiao, J. Renxu, Z. Yuming

Simulation of highly sensitive 3C-SiC strain sensor

Angela Garofalo, Annamaria Muoio, Francesco La Via

A Novel Structure Design of SiC-based SCR Structure with High Holding Voltage Using Segment Topology for High Voltage ESD

Sang Gi Kim, Kyoung-Il Do, Yong-Seo Koo, Gwon-Je Kim

A Physics-based SiC DSRD SPICE Model for Pulsed Power Circuit Simulation

J. Guo, X. Tang, Y. Chen, Y. Zhou, D. Guo, F. Du, L. Sun, Q. Song, Y. Zhang

Ga₂O₃ film with ultrahigh breakdown field via novel aerosol deposition method

Jun-Woo Lee, Jwa-Bin Jeon, Sang-Mo Koo, Jong-Min Oh

Electrical identification of color centers in 6H silicon carbide using a comparative study of deep level transient spectroscopy and density functional

E. Ousdal, L. Vines, J. Ul-Hassan, M. Ghezellou, M. Etzemüller Bathen

Aerosol-Deposited Ga₂O₃–SiC Composite Films for Enhanced Thermal Performance in Power Semiconductor

Hyeong-Seok Oh, Jun-Woo Lee, Jwa-Bin Jeon, Won-Il Ahn, Sang-Mo Koo, Jong-Min Oh

Ag:AZO Electrodes Deposited by Co-sputtering Using FTS to Improve Photodetector Performance

Hanbi Jung, Cheon Lee, Kyunghwan Kim, Jeongsoo Hong

Investigation of phase transition and its impact on the crystal structure and material properties of polycrystalline α/β Ga₂O₃ thin

Jeong-Min Youn, Chang-Hyeon Jo, Yoon-Young Huh, Masaya Ichimura, Jung-Hyuk Koh

Low-pressure Mist-CVD technique for Sn-assisted epitaxial growth of high-crystallinity

Yan Wang, Zhigao Xie, Chuang Zhang, Chee Keong Tan

Impact of Socket and Current Shunt on Switching Characteristics of GaN HEMTs

Yeonwoo Seo, Seoeun Choi, Hyemin Kang

Application of ALD-derived Hf₀.₂₅Al₀.₇₅O-based as Gate Dielectric in AlGaN/GaN High Electron Mobility

C.-Y. Lin, S.-C. Huang, Z.-H. Wang, S.-J. Huang, C.-Y. Cheng, Y.-K. Su

Growth and Properties of SiGe - AlN Core-Shell Crystals

Kwon, Kim, Mun, Park, Kim, Jeong, Kim, Jeon, Lee, Yang, Ahn

Si Layer Formation on SiC Substrates by HVPE Sublimation Sandwich Method

Jeong, Kim, Park, Mun, Kwon, Kim, Kim, Jeon, Lee, Yang, Ahn

Optical characterization of doping-induced defects in n-type 4H-SiC

Teien, Etzemüller Bathen, Martins, Grossner, Johnson, Ousdal, Vines, Galeckas

Towards High-Efficiency Photonic Interfaces for Colour Centres in Silicon Carbide

Lee, Schmid, Demiralp, David, Behera, Kucera, Menguelti, Weig, Kaiser

Impact of oxidation temperature on the formation and annihilation of color centers at SiO₂/SiC

Kaneko, Nakanuma, Toyama, Tahara, Kutsuki, Watanabe, Kobayashi

Generation of Divacancy Colour Centres in 4H-Silicon Carbide for Quantum Nanophotonics with Optically Active

Zimmermann et.al

The Impact of Pre-Growth Treatment of Si- and C-face 4H-SiC Substrates on the Heteroepitaxial Growth of β-Ga₂O₃ by Plasma-Assisted Molecular-Beam

R. Hayyak, T. Ngo, N. Vuong, T. Iqbal, S.-K. Hong, I.-G. Yeo, T.H. Eun

Coherent Control and Narrow-Linewidth Spectroscopy of a Four-Level Silicon Vacancy Spin in Silicon

Hwang, Choi, Paik, Ul-Hassan, Abe, Ohshima, Son, Lee

Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs Under Heavy-Ion

Z. Zhang, H. Yuan, Q. Song, X. Tang, K. Liu, T. Ma, Y. Zhang

Experimental study of Single-Event Irradiation Hardness of 4H-SiC Power MOSFET with Trench Well and Corner

Liu, Song, Yuan, Tang, Han, Zhou, Du, Zhang, Zhang, Zhang

Reducing Parasitic Inductance Through Power Terminal Grouping in SiC Power Modules for EV

Jaejin Jeon, Sang Won Yoon, Kyung Tae Min

Fast Speed SiC IPM Module with Zero Voltage Gate Driving Utilizing Active Miller Clamp Function on Drive

Samuell Shin, Junho Lee, Sangmin Park, Seungjai Choi, Sravan Vanaparthy

Novel 1.2kV SiC MOSFET with New Top-side Cooling Package for Automotive Applications

Wonsuk Choi

Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating

J.-H. Jang, J.-K. Lim, K. Ilves, K.-S. Song, D.-I. Yang, Y.-J. Kim, K.-B. Yeon

High-Density Packaging Approaches for SiC Power MOSFET Modules

Z. Zhang, R. Yu, S. Jahdi, O. Alatise, F. Iannuzzo, B. Stark

Comparative Numerical Analysis of Cu Clip and Al Wire Bonding Structures in SiC Schottky Barrier

Na-Yeon Choi, Sang-Gi Kim, Gwon-Je Kim, Sung-Uk Zhang

Highest efficiency and best performance for inverter motor drives in smallest form factor with new SiC MOSFET-based

S. Park, J. Lee, S. Shin, S. Kim, J. Kim, S. Vanaparthy

09:15-09:45 Break (30min)

11:30-13:00 Lunch (90min)

14:15-14:45 Break (30min)

16:15-16:30 Break (15min)