Program for Monday, September 15th: Talk View

PROGRAM FOR MONDAY, SEPTEMBER 15TH: TALK VIEW

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8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

19:00

19:30

20:00

08:30-08:40 Opening

08:40-09:25

Unlocking New Possibilities: Power Devices and the Future of Semiconductors

Steven Hong

09:25-09:30

Possible interaction between basal plane dislocations and point defects in physical vapor transport grown 4H-SiC

Kazuyoshi Tanabe, Daichi Iijima, Noboru Ohtani

09:30-09:35

Excess Carrier-Induced Modulation of SiC Mechanical Properties: Insights from First-Principles

Hiroki Sakakima, Satoshi Izumi

09:35-09:40

Impacts of wafer thinning process using laser slice technique on device characteristics

K. Akiyoshi, T. Tanaka, S. Takahashi, K. Iwanaga, K. Hamano, A. Furukawa

09:40-09:45

Body diode reliability and reverse recovery characteristics of short tapered SJ-MOSFET fabricated by MeV Al ion

Takeshi Tawara, Kensuke Takenaka, Syunki Narita, Shinsuke Harada

10:15-10:30

Self-heating in 4H-SiC Avalanche-Photodiodes and its Impact on Spectral Responsivity Measurements

F. Beier, N. Papathanasiou, B. Kallinger, M. Rommel, J. Schulze

10:30-10:45

Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors

Yang Liu, Lei Yuan, Xuesong Liu, Tongxiao Hou, Bo Peng, Renxu Jia, Yuming Zhang

10:45-11:00

Defects induced by high-temperature neutron irradiation in 250 µm thick 4H-SiC p-n junction

Mancuso et.al

11:00-11:15

Linking Heavy-Ion Irradiation and Degradation of Silicon Carbide Devices using TCAD

A. Erlebach, H. Goncalves de Medeiros, N. Für, M. Belanche, U. Grossner

11:15-11:30

Characterization of 4H-SiC lateral MOSFETs up to 773K

Rinaldi, Di Benedetto, Rommel, May, Baier, Liguori, Rubino, Licciardo

11:30-11:45

1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric

T. Stecconi, R. Stark, P.D. Reigosa, N. Schneider, C. Li, L. Liang, L. Knoll

10:15-10:45

(Invited) A SiC-based Desktop Quantum Computer

Niethammer, Wörnle, Kafenda, Hoegen, Körber, Widmann, Wrachtrup

10:45-11:00

Room-temperature coherent photoelectrical readout of single spins in 4H-SiC

Nishikawa, Morioka, Abe, Murata, Okajima, Ohshima, Tsuchida, Mizuochi

11:00-11:15

Theory of Electrically Detected Magnetic Resonance of Silicon-Vacancy-Related Defects in Silicon

Fehr, Cochrane, McMillan, Harmon, Sink, Kraus, Lenahan, Flatté

11:15-11:30

Scalable Fabrication and Electrical Characterization of Lateral pin-Diodes on 4H-SiC a-Plane Wafers for Functionalization of

Schwarberg, Rommel, Gobert, Knolle, Hrunski, May, Kallinger, Schmid, Schulze

11:30-11:45

Tunable, highest-quality factor mechanical oscillators for quantum technology

Hochreiter, Fuchs, Kulkarni, Bredol, David, Weig, Krieger, Weber

13:00-13:30

(Invited) Approaches Toward High-Quality and Cost-Effective Bulk Growth of SiC Crystals

Won-Jae Lee, Jung-Gyu Kim, Kap-Ryeol Ku, Yun-Ji Shin

13:30-13:45

Close Space PVT Growth of n- and p-type quasi-bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCS Growth

Sven Strüber, Cristina Grazzi, Tobias Wagner, Jakob Wiedemann, Peter Wellmann

13:45-14:00

SiC Growth by Multi-Wafer Close-Space Sublimation

Hiroyuki Nagasawa

14:00-14:15

New insights on nitrogen doping of polycrystalline SiC fabricated by CVD

Gallou, Potier, Chaussende, Reboud, Girod, Le Boterf, Dubois

13:00-13:30

(Invited) Atomic defects in silicon carbide – A scalable quantum technology

Florian Kaiser

13:30-13:45

Simulation and Experimental Characterization of Skyfish Cavities in 4H-SiCOI for Future Quantum

Timmer et.al

13:45-14:00

Entangled Photon Source on the SiCOI Platform

Lijun Ma

14:00-14:15

Exploring vanadium defects in SiC for quantum communication

Philipp Koller, Thomas Astner, Daniel Wirtitsch, Stefan Putz, Michael Trupke

14:45-15:00

Compact Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices using Background Doping Modulation

Mohamed Torky, Justin Lynch, Nick Yun, Stephen Mancini, Woongje Sung

15:00-15:15

Effect of Varying N⁺ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC

Yapa Mudiaynselage, Deboer, Mancini, Lynch, Jang, Morgan, Sung

15:15-15:30

Development of High Energy Channeling Implantation Process for SiC Superjunction Devices

Ghandi et.al

15:30-15:45

Path for superjunction industrialization by single step high energy channeling implant

Mazzamuto, Lamontagne, Rubin, DeRosa, Roh, Sangregorio, La Via

14:45-15:00

A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247

Felix Hoffmann, Nando Kaminski

15:00-15:15

Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with measurements and

Madhu Lakshman Mysore, Rahul-Vijaybhai Chavda, Josef Lutz, Thomas Basler

15:15-15:30

Impact of current density, accumulated injected charge and temperature on bipolar degradation in 4H-SiC PiN

Bagchi, Leib, Allibert, Dresel, Guiot, Biscarrat, Le Royer, Eckardt

15:30-15:45

Carrier lifetime in 4H-SiC substrates and relationship with device reliability

K. Nagaya, R. Arai, T. Ito, M. Konishi, Y. Yamashita, R. Kamiya, M. Kato

15:45-16:00

Reliability Prediction of SiC MOSFETs via Triple-Sense Vth Measurement and PCA-based Degradation

Yoshiki Takinai, Koichi Endo, Sanshiro Yoichi, Junji Senzaki, Shinji Yokogawa

16:15-18:00

Strain Relief of Silicon Carbide (4H-SiC) Substrates by Wet Etching

Whear, Bay, Rathnakar, Gay, Engler, Hamid, Delahaye, Shah, Kuehnlein

Ultra-Pure SiC Source material for optical SiC crystal growth

Michael Schley, Friedrich Schaaff, Jan Richter

Influence of interfacial pores between seed/graphite holder interface on thermal field in 4H-SiC crystals grown by physical vapor

Daisuke Tahara, Shigeyuki Kuboya, Kazuma Eto, Takeshi Mitani, Tomohisa Kato

Oxygen Pressure-Induced Phase Transition in Ga₂O₃/4H-SiC Heterojunction Diodes: From β to ε

J. Choi, S.-H. Chung, J.-S. Choi, S.-H. Park, G.-P. Kim, J.-B. Kim, S.-M. Koo

Graphite – The Hot Zone Hero

Rondomanski, Izvarin, Badir, Vallejos-Burgos, Abrahamson, Foster, Thompson

Optimizing Diamond Slurry Parameters for Polishing SiC Wafers

Jacob Palmer, Timothy Dumm, Thomas Draskovic

Fabrication of 8-inch High-Purity 4H-SiC Single Crystal Substrates

X. Yang, G. Zhong, X. Xiong, X. Chen, X. Xie, G. Yu, X. Hu, X. Xu

Polytype Transitions in Silicon Carbide: A Macroscopic View

Joerg Pezoldt, Frank Neubert

Investigation on the effect of interface supersaturation on the growth rate and the step structures in the solution growth of 4H-SiC Single

Y. Sakata, S. Enami, M. Nakamoto, M. Suzuki, K. Kamei, T. Yoshikawa

Photoluminescence studies of defect formation during the seeding process of physical vapor transport growth of

Toshitatsu Iwai, Mitsuk Saragai, Noboru Ohtani

Surface Analysis of SiC Wafers after Sonic Lift-Off: Replacing Backgrinding to Enable SiC Wafer

Guimera Coll, Black, Barlett, Kamishetty, Merkle, Bathurst, Bertoni

High Quality 8-inch 4H-SiC Epitaxial Products

Yu Guo, Chunjun Liu, Pengyuan Shen, Yuxin Li

Development of Wide Bandgap Semiconductor Substrates Using Data and AI Techniques Based on Process Informatics: Solutions for SiC Crystal

Jeong, Ryu, Yoo, Shin, Park, Jung, Lee, Ku

SiC engineered substrate versatility demonstration versus industry requirement

W. Schwarzenbach, S. Rouchier, K. Alassaad, C. Gaumer, E. Guiot

Evaluation of the apparent electrical conductivity of carbon fiber-based insulations used in the PVT

Gallou, Chaussende, Potier, Hassant, Stirling, Pichat, El Bakali, Ernst

Ignition point control of high oxidant concentration CMP slurry

Yasuaki Kimikado, Hiroshi Asano, Shinichiro Takami

Optimization of DIW brush cleaning technology using spin scrubber in SiC device manufacturing

Yoshihisa Yamada, Seiu Katagiri, Satoshi Hara

Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-ray

L. Sun, X. Xie, X. Chen, X. Yang, Y. Peng, X. Hu, X. Xu

Ultrafast Imaging for Deep Defect Imaging Through Entire SiC Wafers

Torben Purz, Anton Vakulenko, Hana Vémolová, Yafei Liu, Eric Martin

Influence of Temperature Field and Doping on BPD Distribution in 8-inch 4H-SiC Substrates

Z. Fu, X. Yang, X. Chen, X. Xie, L. Sun, H. Shao, W. Han, G. Yu, X. Hu, X. Xu

Classification of scratch-like polishing damage in 4H-SiC wafers using mirror projection electron

H. Sako, S. Hayashi, K. Ohira, K. Kobayashi, T. Isshiki, N. Hasuike, D. Bizen

Evaluation of oxide processing steps using contactless corona-based CV measurements

Robin Karhu, Volker Häublein, Marshall Wilson, Mathias Rommel, Birgit Kallinger

Ultraviolet Luminescence of N-type SiC crystals grown with various sources under different growing conditions via PVT

J.-H. Park, K.-H. Jung, H.-S. Choi, M.-H. Lee, W.-J. Lee, S.-M. Jeong

Observation and Analysis of the “Galaxy” Defect in 4H-SiC Wafer Through X-Ray Synchrotron

Zhang, Chen, Hu, Zhang, Li, Wu, Wang, Raghothamachar, Dudley, Soukhojak

Wafer-scale, non-destructive characterization of dislocations in 4H-SiC combining birefringence imaging and laboratory X-ray

Harada, Shimamoto, Takahashi, Kawase, Seo, Matsubara, Murayama

Optical characterization of heavy-ion induced damage in 4H-SiC

Goncalves de Medeiros et.al

Minority charge carrier lifetime for evaluating 4H-SiC epitaxial growth by Microwave detected Photoconductivity

Christian Wißgott, Birgit Kallinger, Mathias Rommel

Atomistic simulations of SiC crystal growth phenomena

Romaner, Reichmann, Rajabzadeh, Holub, Gersappe, Kayang, Raghothamachar, Dudley

VT modulation by dipole effect on 4H-SiC with Atomic Layer Deposited Al₂O₃/SiO₂ dielectrics

Bongmook Lee, Veena Misra

Effects of 673K temperature ramps on a 4H-SiC CMOS NOT logic gate

Rinaldi, Di Benedetto, Rommel, May, Baier, Liguori, Rubino, Licciardo

Suppression of stacking faults expansion by backside proton implantation into SiC substrates

Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato

Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling

Shuiyou Zheng, Xingjun Luo, Huaxing Jiang

Investigation on thermal stability for Silicon-cap-annealed Ohmic Contact on n-type 4H-SiC

Takahito Fukuzawa, Hiroaki Hanafusa, Seiichiro Higashi

Silicon Carbide Wafering

Jyun-Jhih Wang, Kun-Wei Lin, Chun-Ming Chen, Hsuan-Jen Shen, Tung-Ying Lin

Reduction of Sidewall Roughness in SiC Trench Formation by Improvement of Photoresist Mask

Alesa Fuchs, Kevin Ehrensberger, Leander Baier, Oleg Rusch

Multi-scale model of ICP-RIE process for improvement of SiC gate trench shape

Yury Shustrov, Ivan Petraš, Andrey Smirnov

Electrical Properties of 4H-SiC MOSFETs on Non-Polar Faces with Various Surface Treatments

Woongsun Kim, Naeem Islam, Sei-Hyung Ryu

Extraction of trench sidewall capacitance by linear component separation towards wafer level

Maximilian Szabo, Tom Becker, Michael Jank, Tobias Erlbacher

Next generation laser annealing for high throughput SiC ohmic contact formation and dopant

Geburt, Bolshukhin, Mueller, Schulze, Asselborn, Kim, Lee, Park, Kwon, Koo

Impact of ambient conditions on oxide thickness distribution on 4H-SiC in thermal oxidation furnace

Tamara Fidler, Patrick Schmid

Fabrication of high-performance SiC MOSFETs via 2-step annealing in H₂/Ar gas mixtures: A novel method without interface

H. Fujimoto, T. Kobayashi, S. Kamihata, K. Hachiken, M. Hara, H. Watanabe

Study on Temperature Coefficient of Vth of 4H-SiC MOSFETs on Si-face

J.-W. Hu, J.-Y. Jang, K.-M. Kang, C.-F. Huang, T. Gonzaga, D. Morisette

Dynamic conduction behavior of SiC-Mosfets in the subthreshold regime and the impact of deep oxide traps to the channel

Marvin Gloth, Drinas Kelmendi, Benjamin Weigt, Hamed Azimi, Tobias Erlbacher

5 MGy Gamma-ray Radiation Effects on 4H-SiC Embedded Photodiode

Tanigawa, Meguro, Takeyama, Ohshima, Kojima, Tanaka, Kuroki

Investigation of Electrical Degradation in 1.2 kV SiC MOSFETs with Embedded SBDs under Power Cycling

G. Kang, J. Jung, S. Kim, H. Yoon, S. Park, D. Baek, S. Jung, O. Seok

JTE-Based Termination design and technology considerations for 1200 V 4H-SiC Superjunction MOSFETs

Z. Zhang, L. Yuan, X. Liu, T. Hou, B. Peng, G. Wang, M. Yu, R. Jia, Y. Zhang

Simultaneous p- and n-type doping carrier profiling of 4H-SiC MOSFETs by Scanning Microwave Impedance

Patrick Fiorenza, Marco Zignale, Fabrizio Roccaforte, Filippo Giannazzo

Technology Challenges in Achieving the Quasi-Planar Trench 3.3 kV SiC MOSFETs Performances

Maresca et.al

Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power

Jeff Joohyung Kim, Jae-Hyung Park, Suman Das, Shane Stein, Sei-Hyung Ryu

The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power

Jan Frederik Dick, Jörg Schulze

Influence of different contact lengths on 4H-SiC TLM test structures

Maximilian Ley, Julian Kauth, Mathias Rommel, Jörg Schulze

Simulating Short Circuit events on SiC MOSFET devices

Alfredo Walter Mario Guerrera, Edoardo Zanetti, Mario Saggio

Impact of Transient Surge Current Pulses on Bipolar Degradation in SiC Power MOSFETs

Alexander Brunko, Manojgna Thotapally, Tobias Erlbacher, Firas Faisal

Investigation of Asymmetric Switching Characteristics of SiC MOSFETs Using Double Pulse Test

Yeonju Lee, Hyemin Kang

New 1200V SiC MOSFET with improved specific-on-resistance and short-circuit capability

Chang-Ju Lee, Woosung Park, Heejin Kwon, Jaegil Lee

10 hours 500°C Heating Test of 4H-SiC MOSFETs with Pt/Ti and Pt/TiN electrodes

Namba, Hiramoto, Takeyama, Ohshima, Kojima, Tanaka, Kuroki

Analysis of Repetitive Surge Current in Commercial SiC Schottky Diodes

Damcevska, Dimitrijev, Haasmann, Tanner, Zeng, Luo, Cui, Zhong, Han

Anodic Oxidation of 4H-Silicon Carbide

Vitale, Bellocchi, Motta, Morin, Olietti, Scuderi, Cosentino, Rascunà, Crupi

Impact of JFET Width on Gate Oxide Reliability under HTRB Conditions in 1700V SiC MOSFETs

Min-Jae Park, Jae-Gil Lee

RC Snubber Co-Design of SiC Power Modules considering Impact on Transient Switching Characteristics

Bong Hak Lee, Sang Won Yoon, Seokjin Shin

Impact of Gamma-Ray Irradiation on the Dynamic Switching Performance of TO-247-3L vs. TO-247-4L 4H-SiC

Sangyun Song, Dong-seok Kim, Hyemin Kang

Impact of VDS Bias, Load Current and Temperature on Long-term Switching Operation of 1.2 kV SiC

Sara Kuzmanoska, Nirali Patel, Jaume Roig, Sotirios Maslougkas

Investigating the Mechanisms of the Single Event Effect Lekage Current (SELC) and Single Event Burnout (SEB) in SiC Power Diodes under Heavy-Ion

Für et.al

A low inductance SiC MOSFET power module packaging design with PCB shielding layer

H. Wan, N. Iosifidis, M. Antoniou, P.M. Gammon, P. Mawby

Development of a DBC-Free and Compact Six-in-One SiC Power Module with Enhanced Dual-Side-Cooling

G. Tang, L.C. Wai, Y. Hang, S.B. Vignesh, Y.L. Ye, Y.X. Yeo, B.L. Lau, M. Rathin

Dynamic switching benchmark of latest gen SiC MOSFETs for Automotive and Urban Air Mobility power

Reza Soleimanzadeh, Yanfei Zhao, Athanasios Mesemanolis, Stephan Wirths

Where light ends, energy begins: Transformation of waste bulbs enclosures into multiphasic silicon carbide for Lithium-ion

Kyungah Yang, Rumana Hossain, Veena Sahajwalla

Diamond Integration on SiC Substrates for Enhanced Heat Dissipation in Power Semiconductor Devices

Park, Nguyen, Phung, Woo, Nam, Shin, Jeong

Ultra-thick (~200 µm) epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor

T. Rana, T. Karim, S. Johnson, K. Han, E. Sanchez, N. Thierry

18:30-20:00 Industrial Session (Equipment)

18:30-20:00 Industrial Session (Materials)

09:45-10:15 Break (30min)

11:45-13:00 Lunch (75min)

14:15-14:45 Break (30min)

16:00-16:15 Break (15min)

18:00-18:30 Break (30min)