Program for Thursday, September 18th: Talk View

PROGRAM FOR THURSDAY, SEPTEMBER 18TH: TALK VIEW

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View: with abstracts session overview

8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

19:00

19:30

20:00

20:30

21:00

08:30-09:15

Exploring the Versatility of SiC: Emerging Applications beyond Power Electronics

Philippe Godignon

09:45-10:15

(Invited) A Toolbox For Trench Filling Epitaxy for SiC Superjunctions

Shah et.al

10:15-10:30

Influence of HCl on doping uniformity of 4H-SiC SJ structure

Shiyang Ji, Kazutoshi Kojima, Mitsuru Sometani, Shinsuke Harada, Yasunori Tanaka

10:30-10:45

Buffer Layer Structural Engineering for Surface Pit Suppression in 4H-SiC Epitaxy

Shuangyuan Pan, Jiulong Wang, Le Yu, Zheyang Li, Rui Jin

10:45-11:00

Improving 3C-SiC Quality Through Wafer Bonded Switchback Epitaxy

Colston, Turner, Perera, Renz, Gammon, Antoniou, Mawby, Shah

11:00-11:15

Enabling SiC Photonic Platforms with Smart Cut™: Material Quality and Process Optimization of SiCOI

Huet et.al

11:15-11:30

Low defectivity epilayers grown on SmartSiC™ engineered substrates

Zielinski et.al

09:45-10:15

(Invited) The Role of Point Defects in Performance and Reliability: From Material and Device to

Ulrike Grossner

10:15-10:30

Detection of energetically close deep levels in electron-irradiated 4H-SiC by capacitance transient analysis based on Bayesian

Kotaro Yamanaka, Kyota Mikami, Tsunenobu Kimoto, Mitsuaki Kaneko

10:30-10:45

Time-resolved Electron Beam Induced Current (TR-EBIC): A high potential method to map minority charge carrier lifetime in

Christian Stefan Gruber, Gregor Pobegen, Jürgen Smoliner

10:45-11:00

Towards a complete mapping of electron and hole traps in the entire 4H-SiC band gap

Kupper, Belanche, Goncalves de Medeiros, Für, Kozakai, Kaneko, Kimoto, Grossner

11:00-11:15

Defect formation by irradiation with thermal and fast neutrons in SiC

Belanche Guadas et.al

11:15-11:30

Evaluation of Auger recombination coefficient in highly N-doped 4H-SiC under high-level injection

Endong Zhang, Hiroko Matsuyama, Masashi Kato

13:00-13:15

DC and RF local electrical properties of macrostepped 4H-SiC surface probed by AFM-SSRM and AFM-sMIM

Rosine Coq Germanicus, Gabriel Ferro

13:15-13:30

Study on the Particle Removal Mechanism on 4H-SiC Surface by Comparison with Si Surface

Yoon-Ji Ra, Juyeol Lee, Eun-Suck Choi, Sung-Pyo Jung, Jin-Goo Park, Tae-Gon Kim

13:30-13:45

Exploiting the kinetic selectivity of charge pumping in electrically detected magnetic resonance of 4H-SiC

Ilias Vandevenne, Marina Avramenko, Etienne Goovaerts, Peter Moens, Sofie Cambre

13:45-14:00

Enhanced detection of implanted noble gases and hydrogen in silicon carbide by surface and vacuum engineering in

Paweł Michałowski

14:00-14:15

Characterization of the electric field in silicon carbide detectors by Optical Beam Induced Current

S. De Luca, A.S. Mancuso, A. Muoio, E. Sangregorio, F. La Via

14:15-14:30

Temperature dependence of high-field electron and hole drift velocities in 4H-SiC

Daichi Fujioka, Ryoya Ishikawa, Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto

14:30-14:45

Generation of Stacking Faults in SiC Epitaxial Layers from BPDs Not Parallel to Step-flow Direction

A. Imhof, N. Mahadik, S. Sung, J. Gallagher, R. Stahlbush, T. Kuhr, E. Balkas

13:00-13:30

(Invited) SiC JFETs: Pushing Performance Boundaries or Re-inventing the Wheel?

Alexander Bolotnikov

13:30-13:45

Modeling of forward current conduction in 4H-SiC PiN diodes

S. Asada, K. Murata, F. Fujie, T. Shiono, N. Ishibashi, Y. Mabuchi, H. Tsuchida

13:45-14:00

Self-Heating Calibration in SiC Power Diodes

Hollmann, Almahmoud Almerhebi, Le Royer, Pujade, Biscarrat, Godignon

14:00-14:15

ELECTRO-MECHANICAL STRESS RELIEF MODELING OF DIFFERENT PASSIVATION STACK SCHEMES FOR IMPROVED ROBUSTNESS OF SIC POWER

Cosentino, Sitta, Bellocchi, Russo, Calabretta, Arena, Rascuna

14:15-14:30

SiC Power MOSFET Design for Mitigation of Oscillations in Multi-Chip Power Modules

Anja Katerina Brandl, Ivana Kovacevic-Badstuebner, Michel Nagel, Ulrike Grossner

14:30-14:45

Design optimization of 600V 4H-SiC Lateral Bi-directional MOSFET (L-BiD-MOSFET) with 3D TCAD

Seung Yup Jang, Skylar Deboer, Woongje Sung

15:00-17:00

Growth and analysis of low resistivity polycrystalline silicon carbide using physical vapor

Anqi Wang, Xuefeng Han, Xiaodong Pi

Carbide coated graphite with enhanced mechanical and chemical properties for SiC crystal growth

Dr. Wijayawardhana, Dr. Thielemann, Dr. Huang, Dr. Forsberg, Dr. Pedersen

Successful Development of 12 inch SiC crystal by PVT method

R. Wei, T. Li, L. Qiao, D. Mao, Y. Gao, C. Zhang, K. Mao

Influence of the oval-shaped dark facet on minority carrier lifetime in 4H-SiC homoepitaxial layers

Qun Tan, Zheyang Li, Le Yu, Pengxiang Hou, Zhibin Zhao, Rui Jin, Xiaoguang Wei

8-12 Inch Silicon Carbide Wafer Used for AR Glasses

Guangming Wang, Yanfang Lou, Chunjun Liu

Behaviors of basal plane dislocations in 4H-SiC epilayer grown on the facet trace region of

Wataru Tochizaki, Shunta Sueda, Noboru Ohtani

In-situ Interferometric Observation of Spiral Growth on 4H-SiC Growth and Attempt of Growth Kinetic and Step Property

K. Fukasaku, W. Mori, M. Nakamoto, M. Suzuki, K. Kamei, T. Yoshikawa

Interferometric Observation and Growth Kinetics Analysis of SiC Solution Growth Using a Gibbs-Thomson

A. Tanaka, Y. Asano, M. Nakamoto, M. Suzuki, K. Kamei, T. Yoshikawa

Distribution of the electrical resistivity of a n-type 4H-SiC crystal

Xinyu Xie, Yafei Kong, Lingmao Xu, Deren Yang, Xiaodong Pi

CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical

G. Pfusterschmied, M. Kusolitsch, C. Zellner, M. Perazzi, T. Yang, U. Schmid

Optimizing SiC Epitaxy: Innovative approaches for buffer layer growth

Messina, Bombaci, Azadmand, Mauceri, Allegri, Vecchio, Lafage, Preti, Alonzo

Solution Growth Technique of Silicon Carbide with In Situ Observation

Yoshihisa Abe, Akihisa Kawabe

Effect of Various mm-sized Source Granules on SiC Single Crystal Growth via the PVT Method

Ha-Jun Kim, Kyu-Hyun Kim, Won-Jae Lee, Myung-Hyun Lee

6“ P-type and Ultra-Low Resistivity SiC Crystals Grown by PVT

D. Dukes, V. Torres, T. Kegg, N. Griffin, H. Briccetti, C. Harvey

A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-based

Myung-Beom Park, Jungwon Kim, Yigil Cho, Yun Ho Kim, Sam-Jong Choi

Quantitative Simulation of Bipolar Degradation in 4H-SiC Using UV Pulsed Laser: Considerations on the Critical Duration of Threshold Minority Carrier

Yasuyuki Igarashi, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density

A. Shimbori, R. Wada, N. Tokoro, T. Kuroi, H.Y. Wong, A. Huang

Metrology and Visualization of Silicon Carbide Surfaces via Interferometric 3D Optical Profilometry and Scanning Spreading Resistance

Wooseop Lee, Daeho Kim

Suppression of Bipolar Degradation in SiC PiN Diodes Using Substrates Fabricated by Novel Crystal Growth Method Based on Batch

H. Inayoshi, T. Sugiyama, K. Matsushima, J. Yoshikawa, M. Kato, E. Zhang

Lifetime mapping and decay curve analysis around defects on 4H-SiC epitaxial wafer using µ-PCD

T. Wakabayashi, K. Hayashi, H. Fujii, T. Hirano, N. Okano, J. Senzaki

Process-dependent photoluminescence behavior evolution of stacking faults in 4H-SiC

Kölbel, Kallinger, Kranert, Müller, Fuchs, Erlbacher, Faisal, Schulze

Comparison of the irradiation temperature effect of on the carrier removal rates in GaN and SiC.

Lebedev, Kozlovski, Malevsky, Davidovskaya, Levinshtein, Sakharov, Nikolaev

The Evolution of Threading Screw Dislocations Defects in SiC crystals Grown by Physical Vapor

Zhang, Xie, Wang, Tian, Wang, Sun, Chen, Yang, Hu, Xu

Observation of Depletion Layer in SiC Diodes Using a Simple EBIC Holder

Shunsuke Asahina, Yusuke Sakuda, Takeshi Otsuka, Yoshiyuki Kubota

Impact of Predefined Defects on Device Reliability

Darrigo et.al

High Quality P-type 4H-SiC Growth by PVT Method

Hu, Chen, Zhang, Li, Zhang, Wang, Raghothamachar, Dudley, Dukes, Torres

Deep-Level Defect Effects on the performance of 4H-SiC Superjunction MOSFETs

Se-Rim Park, Seung-Hyun Park, Geon-Hee Lee, Sang-Mo Koo

The elusive Bulk Inclusion, sizing, wafer- and ingot-level localization and their effect on dislocation generation and epitaxial defectivity in

Jimmy Thörnberg, Björn Magnusson

Automatic identification of the Burgers vector and line vector of dislocations in 4H-SiC wafer with birefringence

Takahashi et.al

Rapid Wafer-Scale Evaluation of Defects in SiC Using Deep Learning

J. Gallagher, N. Mahadik, R. Stahlbush, K. Hobart, M. Mastro

Separating Residual Subsurface Damage and Bulk Crystal Quality in SiC Wafers by Laser Light Scattered Intensity

T. Kaneko, M. Takahara, K. Ashida, D. Dojima, K. Toda, T. Fujiwara, H. Mihara

Evaluating Bulk and Processing Quality in SiC Wafers via Laser Light Scattering Mapping

M. Takahara, T. Kaneko, K. Ashida, D. Dojima, K. Toda, T. Fujiwara, H. Mihara

An Ab Initio Approach for Insight into the Shockley- and Frank-Type Stacking Faults in 4H-SiC

Iqbal, Hong, Na, Kim, Jung, Kim, Oh, Jang, Ngo, Bahng

Structural Investigation of Carrot Defect with Two Surface Grooves and 3C-SiC Polymorph in 4H-SiC Epitaxial

Na, Hong, Jung, Oh, Jang, Kim, Bahng, Park, Chae, Park

Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques

Tanaka, Akiyoshi, Iwanaga, Takahashi, Watanabe, Hamano, Furukawa

Method to get different silicon carbide trenches profile using plasma etching for high performance SiC

Jinghe Yang, Xiangle Ai, Jiao Yang

Examination of Channeling Ion Implantation in 4H-SiC Wafers by Photo-Modulated Reflectance Technique

D. Ullrich, J. Szivós, Z. Bozóki, Z. Zolnai, S. Lenk, L. Balogh

Effect of scanning speed and laser power on the surface roughness of 8-inch laser-slicing SiC wafers

L. Che, Q. Chen, B. Li, J. Zhang, H. Fan, X. Zhang, R. Wang, X. Chen

A Study on Simplifying the Process by Using Multiple Epitaxy and Implantation Method to fabricate SiC Super

H.-W. Chen, C.-Y. Cheng, W.-L. Lai, Y.-C.S. Wu, B.-Y. Tsui

Fluence-Dependent Interfacial Reactions in UV Laser Annealed NiAl/4H-SiC Contacts: Structural Expansion and Ohmic

Park, Kim, Choi, Kang, Kang, Lee, Kim, Hong, Ji, Koo, Shin

The effect of the vertical ultrasonic vibration on the blade dicing of the SiC wafer

Youngkwan Kim, Junsik Woo, Byungwook Park, Sumi Choi

Slurry-less Electrochemical Mechanical Polishing Characteristics of 4H-SiC in Weak Alkaline

Aoi Kaneko, Rongyan Sun, Yuji Ohkubo, Kazuya Yamamura

Thermal oxidation of 4H-SiC (0001) in O2 and N2O: kinetics, interface electrical properties and induced

Roccaforte, Votadoro, Di Franco, Panasci, Vivona, Greco, Giannazzo, Fiorenza

Electrical and Optical characterization on H⁺ doped 4H-SiC Schottky diodes

Scalisi et.al

Mechanism of Ni-based Silicide layer formation on 4H-SiC substrates via laser annealing

Kim, Kim, Lee, Hong, Ji, Seifert, Park, Jeong, Min, Shin

Comparative Study on Grinding Behavior of C-face and Si-face in Laser-Sliced 4H-SiC Wafers

B. Li, X. Zhang, Q. Chen, L. Che, H. Fan, J. Zhang, X. Xu, R. Wang, X. Chen

Investigation of silicon nitride based high-κ dielectrics for SiC power MOSFETs

Bolat et.al

Atom Probe Tomography for Highly Implanted Phosphorus Ion in Silicon Carbide

Akio Kanayama, Shohei Hayashi, Shu Kurokawa, Junichiro Sameshima

Avalanche Stress Study of 4H-SiC Power Devices: Impact of Voltage Rating and Substrate for JBS and PiN

Abbas, Le Royer, Lavieville, Biscarrat, Allibert, Edwige, Philippe

Trench Superjunction (SJ) Platform Technology for SiC Power Devices

A.B. Renz, K. Melnyk, N. Iosifidis, P.M. Gammon, M. Antoniou

First Demonstration of LOCal Oxidation of SiC (LOCOSiC) isolation in 4H-SiC Power Devices - Using a 650 V JBS Diode as an

Wang, Chen, Lin, Hsu, Tsai, Li, Liu, Chuang, Tsui

Unveiling the Role of Crystallographic Defects in SiC Device Reliability Using Emission Microscopy and Etching-Based Structural

Calabretta et.al

2x Current Boosting Scheme in 3300 V 4H-SiC VDMOSFET

Widjaja et.al

Study on the Current Hump in SiC MOSFETs Induced by False Turn‑on of the High‑Side Body Diode

Taehyun Jang, Hyemin Kang

Modeling of the Physical Properties of 3C-SiC/4H-SiC Heterostructures for TCAD Simulation

Tetsuo Hatakeyama, Kota Gejo, Hiroyuki Nagasawa

Impact of cell design on switching performance of 1.7kVSiC VDMOSFET

Shih Chiang Shen, Hua Mao Chen, Yu Jen Chen, Chih Hung Yen

Calculation of the whole interface state density profile in SiO₂/SiC lateral MOSFETs

M. Zignale, P. Fiorenza, L. Calcagno, M. Antoniou, F. Giannazzo, F. Roccaforte

Characteristics of High Current Density 4H-SiC Barrier Schottky Diodes

Lan Luo, Yu Zhong, Peng Cui, Lei Ge, Yingxin Cui, Mingsheng Xu, Jisheng Han

Challenges in Measuring Thin SiO₂ Layers on 4H-SiC via Spectroscopic Ellipsometry

Julien Körfer, László Makai, Zsombor Pap, Balint Fodor, Mathias Rommel

4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications

Higashi, Meguro, Maeda, Sezaki, Takeyama, Ohshima, Kojima, Tanaka, Kuroki

Suppression of short channel effects by LDD structure in 4H-SiC n-channel MOSFETs

K. Shimizu, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka, S.-I. Kuroki

Optical Critical Dimension Metrology for the SiC Trench MOSFET Process

Boglárka Dikó, Oleg Rusch, Julien Koerfer, Attila Sütő, Emeric Balogh

'Ladder' design for improved static electrical characteristics for 1.2kV 4H-SiC MOSFET with deep

Skylar Deboer, Seung Yup Jang, Stephen Mancini, Adam Morgan, Woongje Sung

Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET

Haizhao Zhi, Sirui Feng, Xiaoping Wang, Xinpeng Lin, Yuxi Wan

A study on different SiC MOSFET Edge Termination Ruggedness

Guerrera, Zanetti, Zumbo, Cosentino, Scuderi, Guarnera, Saggio

Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs

P.-C. Liao, K.-Y. Lee, R.-C. Wu, Y.-Y. Wen, P.-Y. Cheng, W.-X. Wang

An Improved Analytical Model for SiC P-i-N Diode Reverse Recovery

Giorgian Borca-Tasciuc, Tat-Sing Paul Chow

Temperature-Dependent TLM-Based Resistance Modeling for 4H-SiC CMOS

Hui Wang, Pengyu Lai, Anthony Di Mauro, H. Alan Mantooth, Zhong Chen

Silicon Carbide Radiation Sensor under High Temperature and Defects Analysis with ODMR

Lei Cao, Jarod Remy, Luke Shoen

Pulsed optically detected magnetic resonance of silicon vacancies in SiC

Y. Yamazaki, M. Hanawa, K. Murata, H. Tsuchida, M. Kohda, T. Ohshima

4H-SiC Tunneling Light Emitter as a Light-Source for Monolithically Integrated Off-Resonant Excitation of Silicon

Jan Frederik Dick, Samuel Ultsch, Mathias Rommel, Jörg Schulze

Demonstration of the first full-wave rectifier circuit on β-Ga₂O₃ diodes

Sujin Kim, Taeeun Lee, Yusup Jung, Sola Woo, Sinsu Kyoung

Two-Step Growth of κ-Ga₂O₃ Thin Films on 4H-SiC Substrate Using Mist CVD with Temperature-Varied Buffer

Siyoung Bae, Yun-Ji Shin, Seong-Min Jeong

Simulation Framework for Quantum Control Protocols in Spin-3/2 Silicon Vacancies of 4H-SiC

Jun Jae Choi, Seung-Jae Hwang, Seoyoung Paik, Sang-Yun Lee

Oxidation effects on optical properties of Si and SiC photonic crystal nanocavities

Heungjoon Kim, Bong-Shik Song, Takashi Asano, Susumu Noda

Fabrication of CMOS-Compatible 4H-SiC UV-C Photodiodes Using Lateral Structures and Junction

Han, Kim, Park, Kang, Park, Kim, Lee, Yang, Choi, Koo, Kang, Shin

Low-damage laser slicing technology for bulk GaN

Zhang, Peng, Li, Chen, Li, Che, Fan, Guan, Zhang, Xu, Chen, Wang, Zhang

Highly Stable Thin Film Transistors Based on Exfoliated β-Ga₂O₃ via RTP Annealing

Jiheon Ha, Moohyun Kim, Bombi Kim, Jeongkyun Roh

A SiC-based Desktop Quantum Computer

Widmann, Wörnle, Kafenda, Hoegen, Körber, Niethammer, Wrachtrup

Fabrication, Characterization, and Performance Assessment of GaN PiN Betavoltaic Cells

Park, Kwak, Lee, Kim, Kwak, Kim, Kim, Kim, Park, Bae, Lee

Towards High-Fidelity Quantum Gates for the V2 Defect in 4H-SiC

Y. Hu, L.J. Feije, G.M. Timmer, T. Martens, M. van Riggelen, T.H. Taminiau

Modeling the Nucleation and Growth Kinetics of Heteroepitaxial Diamond on ALD-Al₂O₃/SiC via

N.-M. Phung, H.-L. Nguyen, K.-Y. Woo, T.-Y. Park, Y.-J. Shin, S.-M. Jeong

Excellent Temperature Stability of Al₀.₈₅Ga₀.₁₅N/Al₀.₅Ga₀.₅N HEMT

Do-Hyeong Yeo, Min-Keun Lee, Hyun-Seop Kim, Ho-Young Cha

A study of optical emission spectroscopy (OES) for high selective-etching in E-mode HEMT process

K.-K. Choi, S.K. Kim, J.K. Mun, S. Kim, Y.J. Park, D.-H. Kang

Effect of Dynamic Reverse Bias on the Blocking Capability of SiC MOSFETs under Development

Jiale Wu, Zhiwei Wang, Zhongyuan Chen, Li Ran

Temperature Dependence of the AC-BTI in SiC MOSFETs

Kohei Takei, Hideya Kishigami, Takashi Setoya

Accumulated Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs After AC Gate Switching

Ke Wei, Wangchen Li, Chenxi Li, Huaxing Jiang

Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs

Rajrupa Paul, Reza Soleimanzadeh, Stephan Wirths

High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout

Takahiro Makino, Tomoki Taoka, Kaito Yamamura, Takuro Tomita

Modelling Leakage Current Variations Based on Threshold Voltage Shift in SiC MOSFET Under Positive Gate

Zappalà et.al

Reducing metal delamination in SiC devices by carbon removal

Gottfried, Ellebrecht, Clair, Ghosal, Mariya, Bittner, Dunger

Design Space Exploration of SiC Power Module Package via Surrogate Model

Lu Wan, Nicolo Ripamonti, Yanfei Zhao, Reza Soleimanzadeh, Arne Schröder

Method for Improving Instability of Forward Voltage during Power Cycling Test about SiC Power Module

Jangmuk Lim, Pil Kyoung Oh

Modeling and Experimental Evaluation Comparing Normal to c-plane Stress-Strain of Two-Step ICP Etched

David Spry, Carl Chang, Ariana Miller

17:30-21:00 Gala Dinner

09:15-09:45 Break (30min)

11:30-13:00 Lunch (90min)

14:45-15:00 Break (15min)

17:00-17:30 Break (30min)