ICSCRM 2025: THE 22ND INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS
Convention Hall, 1F

Sessions

  • Session 1 (Sep 14 09:45-19:15) ICSCRM Tutorial
  • Session 3B (Sep 15 10:15-11:45) Quantum Devices (MON_1B)
  • Session 4B (Sep 15 13:00-14:15) Quantum Communication (MON_2B)
  • Session 5B (Sep 15 14:45-16:00) Degradation Phenomenon (MON_3B)
  • Session 9B (Sep 16 09:45-11:30) FinFETs and Channel Characterization (TUE_1B)
  • Session 10B (Sep 16 13:00-14:15) Radiation Effects and Late News (TUE_2B)
  • Session 11B (Sep 16 14:45-16:15) High-Voltage Devices (TUE_3B)
  • Session 14B (Sep 17 09:45-11:30) Super-Junction MOSFETs (WED_1B)
  • Session 15B (Sep 17 13:00-14:15) Applications and Packaging (WED_2B)
  • Session 16B (Sep 17 14:45-16:15) Advanced Processing (WED_3B)
  • Session 19B (Sep 18 09:45-11:30) Impact of Point Defects (THU_1B)
  • Session 20B (Sep 18 13:00-14:45) Device Concepts and Characterization (THU_2B)
  • Session 22B (Sep 19 08:30-10:00) Interface Characterization (FRI_1B)
  • Session 23B (Sep 19 10:30-12:00) Gate Reliability (FRI_2B)
  • Session 24B (Sep 19 13:15-15:00) Quantum Sensing and Quantum Control (FRI_3B)