PROGRAM
Days: Monday, October 6th Tuesday, October 7th Wednesday, October 8th Thursday, October 9th
Monday, October 6th
View this program: with abstractssession overviewtalk overview
13:50-14:30 Session KN: Keynote
Chair:
Location: Amphitheatre Jean Touton
| 13:50 | SAFETY in cars (abstract) |
15:30-15:50Coffee Break
15:50-17:20 Session T1: Tutorial
Chair:
Location: Amphitheatre Jean Touton
| 15:50 | Reliability aspects of novel device architectures (abstract) |
Tuesday, October 7th
View this program: with abstractssession overviewtalk overview
08:30-10:30 Session F2-1: F2-1 - Power Devices and Microelectronic System: Reliability and Failure Analysis - F2-1 SiC Reliability
F2 - SiC and GaN power devices
Chairs:
Location: Amphitheatre Jean Touton
| 08:30 | Characterization Methods for Evaluating Charge Carrier Trapping Mechanisms of SiC Power MOSFETs (abstract) |
| 09:10 | In-Depth 2D FEM Analysis of Gate Cracking in SiC MOSFETs Under Repetitive Short-Circuit Conditions: Application of the Rankine Model for Crack Length Prediction (abstract) |
| 09:30 | Gate Oxide TDDB Lifetime Evaluation of SiC MOSFETs by HTGB Test Using Square Wave Voltage (abstract) |
| 09:50 | Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test (abstract) |
| 10:10 | Inductance and capacitance parasitic prediction thanks to data analysis applied to SiC MOSFET wide frequency band characterization (abstract) |
10:30-10:50Coffee Break
10:50-12:10 Session D: D - Reliability of Microwave devices and circuits
- Wide band gap semiconductors,
- Microwave and compound semiconductor devices,
Chairs:
Location: Amphitheatre Jean Touton
| 10:50 | Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test (abstract) |
| 11:10 | Robustness of GaN LNAs under Ku-band jamming signal: understanding the weak point to design future robust LNAs (abstract) |
11:30-12:10 Session I1: I1 - Extreme environments : ESD and EMC
Chairs:
Location: Salle Gabriel 1
| 11:30 | Power-Rail ESD Clamp Circuit With Modified Inverter Structure for Monolithic GaN-Based Integrated Circuits (abstract) |
| 11:50 | Frequency Model Investigation for ESD failure prediction (abstract) |
12:30-13:50Lunch Break
13:50-14:30 Session C-IP: C - Progress in Failure Analysis: Defect Detection and Analysis
Chairs:
Location: Amphitheatre Jean Touton
| 13:50 | From AI-powered Image Classification to GenAI: Possibilities for Modern Image-based Failure Analysis (abstract) |
14:30-16:10 Session E2: E2 - Packaging and Assembly : Reliability and Failure Analysis - Long-term Reliability and Harsh Conditions
Long-term Reliability and Harsh Conditions
Chairs:
Location: Amphitheatre Jean Touton
| 14:30 | Long Term Transformation Of Cu / Sn Intermetallic Compounds in Large Solder Joints (abstract) |
| 14:50 | Long-Term Drift of a Bandgap Voltage Reference by Molding Compound Oxidation during Extended Thermal Aging (abstract) |
| 15:10 | In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors (abstract) |
| 15:30 | Characterization of the bulk moisture diffusion in epoxy-based potting compounds for IGBT semiconductor power modules (abstract) |
| 15:50 | Assessment of Thermal Management Strategies for Prismatic LiFePO4 Batteries: a Test Bench Development (abstract) |
14:40-15:20 Session C: C - Progress in Failure Analysis: Defect Detection and Analysis
Chairs:
Location: Salle Gabriel 1
| 14:40 | Bidirectional 1D-CNN Model Based Failure Current Classification with open-set recognition (abstract) |
| 15:00 | Analysis for an DA converter power up failure induced by process fluctuation (abstract) |
15:20-15:30 Session EFP1: Exhibitor Flash Presentation - SmarAct Metrology / Kleindiek Nanotechnik
Industrial / Commercial presentation
Chair:
Location: Salle Gabriel 1
15:30-16:10 Session G: G - Photonics Reliability
- Solar Cells and Display,
- Optoelectronics,
- Organic electronics: OLED, Electronic Ink, TFT
Chairs:
Location: Salle Gabriel 1
| 15:30 | Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination (abstract) |
| 15:50 | Hotspot analysis on a flexible PV mini-modules based on IBC solar cells (abstract) |
16:10-16:30Coffee Break
16:30-18:50 Session posters: Poster Session - All topics
Location: Hall
Degradation modeling considering multiple performance parameters degradation based on mixed effects models (abstract) |
A Bi-LSTM-Based Digital Twin Model for Photovoltaic Strings Under Current Mismatch Condition (abstract) |
Autoencoder-Driven State-of-Health Estimation for Lithium-Ion Batteries via Dynamic Relaxation Time Distribution Features from Electrochemical Impedance Spectroscopy (abstract) |
Sodium in amorphous and crystalline Ta2O5 (abstract) |
Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz (abstract) |
Thermal and Ageing Characterizations of 55nm SiGe HBT (abstract) |
Large STEM lamella optimisation in a dual beam on HEMT GaN technologies for reliability assessment (abstract) |
Process-related challenges in the formation of SiO2 layers by chemical vapour deposition for MEMS applications (abstract) |
Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip (abstract) |
Mechanism analysis and possible improvements for leak electricity failure caused by conductive silver paste bonding (abstract) |
Case Analysis and Research on the Failure of Chip Passivation Layer Defects under the Comprehensive External Environmental Stresses (abstract) |
Simulation and experimental analysis of performance degradation in N-LDMOS devices after thermal aging processes (abstract) |
Microstructural and Reliability Analysis of SAC305/Sn-57Bi-1Ag Composite Solder Joints with Different Printing Aspect Ratios (abstract) |
Lifetime evaluation of wire bonds in LED systems by modelling and accelerated testing (abstract) |
Thermal stability of direct cooling structures for power electronics using instantaneous laser soldering: CFD cooling performance verification with and without void (abstract) |
A Comprehensive 3-D FEM Based Numerical Lifetime Investigation on the Effect of Bond Wire Loop Ratio on Molded Power Electronics Assemblies (abstract) |
Standardized Test Method for Pure Bending Evaluation of Foldable Display Materials Under Natural-Arc Folding (abstract) |
Thermo-mechanical reliability of transfer molded TO-247-3L packages with Ag nanoporous sheet bonding (abstract) |
High temperature environment reliability of in-air Cu sintered and transfer molded TO-247-3L packages for automotive applications (abstract) |
Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits (abstract) |
Aging of p-GaN gate HEMTs under hard-switching conditions (abstract) |
Dynamic Gate Stress: Impact of Duty Cycle and Gate Resistance on Automotive Grade Planar-Gate 1200 V SiC MOSFET (abstract) |
Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress (abstract) |
Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels (abstract) |
Optimal Preconditional Voltages for SIC MOSFET Vth Measurement in the Aim of Temperature Measurement (abstract) |
Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of gate voltage (abstract) |
A Novel Digital Twin Collaborative Power Cycling Test Method for SiC MOSFETs (abstract) |
Real-Time Prediction Method of Battery Capacity Loss Based on Arrhenius-LSTM (abstract) |
Influence of cooling conditions on estimated power cycling lifetime for the large-area substrate solder joint in power modules (abstract) |
Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile (abstract) |
Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices (abstract) |
Wednesday, October 8th
View this program: with abstractssession overviewtalk overview
08:30-10:30 Session A: A - Quality and Reliability assessment techniques and methods for Devices and Systems
Chairs:
Location: Amphitheatre Jean Touton
| 08:30 | Application-representative high-frequency power cycling of SiC power modules used in inverters and rectifiers (abstract) |
| 08:50 | Data-driven Metamodels for Failure Analysis of Power Electronic Modules (abstract) |
| 09:10 | Failure Prediction Through Testing Data Using Machine Learning Classification: A Smart Plug Top Case Study (abstract) |
| 09:30 | Reliability Optimization of Three Phase Inverter Based on Model Predictive Control (abstract) |
| 09:50 | Reliability Assessment of SMD Tantalum Capacitors for Active Implantable Medical Devices: A Methodology Based on ALT and DoE (abstract) |
| 10:10 | Reliability Assessment of Systems with Multiple Performance Characteristic by Fusing Random Effects Wiener Processes with R-vine Copula (abstract) |
08:30-10:30 Session H: H - MEMS and sensors Reliability
- Bio-electronics, Bio-sensors, Nano-Bio-technologies,
- MEMS and MOEMS,
- NEMS and nano-objects.
Chair:
Location: Salle Gabriel 1
| 08:30 | Surface wearing in MEMS accelerometer after mechanical reliability stress tests: physical and electrical characterization (abstract) |
| 08:50 | Electrical Properties of Y2O3 for MEMS Applications (abstract) |
| 09:10 | Robustness of nano-electromechanical switches against the mechanical shock and vibration loads (abstract) |
| 09:30 | Stability Enhancement of MEMS Sensors Based on Time-Frequency Interleaving Analysis (abstract) |
| 09:50 | Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches (abstract) |
| 10:10 | On the self-actuation reliability issue in high-power RF MEMS (abstract) |
10:30-10:50Coffee Break
10:50-12:10 Session B: B - Semiconductor Failure Mechanisms & Reliability for Si technologies & Nanoelectronics
Chair:
Location: Salle Gabriel 1
| 10:50 | Hot-carrier stress in n-type logic CMOS devices at temperatures down to the deep-cryogenic regime (abstract) |
| 11:10 | Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications (abstract) |
| 11:30 | Comparison of semi empirical modelling of FinFET FPGA ageing based on high stress short time with 20000 hours low stress measures (abstract) |
| 11:50 | Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices (abstract) |
10:50-12:10 Session F2-2: F2-2 - Power Devices and Microelectronic System: Reliability and Failure Analysis - F2-2 GaN Reliability
F2-2 GaN Reliability
Chairs:
Location: Amphitheatre Jean Touton
| 10:50 | Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction (abstract) |
| 11:10 | 10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface (abstract) |
| 11:30 | Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits (abstract) |
| 11:50 | Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching (abstract) |
12:10-12:20 Session EFP2: Exhibitor Flash Presentation - Opsens Solutions
Industrial / Commercial presentation
Chair:
Location: Salle Gabriel 1
| 12:10 | Opsens Solutions |
12:30-13:50Lunch Break
13:50-15:50 Session E1: E1 - Packaging and Assembly : Reliability and Failure Analysis - Thermo-mechanical reliability and microstructural analysis
Thermo-mechanical reliability and microstructural analysis
Chairs:
Location: Amphitheatre Jean Touton
| 13:50 | Reliability tests of an atom chip for quantum gravimetry (abstract) |
| 14:30 | Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission (abstract) |
| 14:50 | Thermally cycling-stable and highly heat-dissipative BGA packages manufactured by fluxless laser soldering: Experimental and numerical investigations (abstract) |
| 15:10 | In-situ TEM investigation of thermomechanical fatigue of thick copper metallizations (abstract) |
| 15:30 | Microstructural analysis of the Ag/graphene-coated-Cu composite sinter paste in high-temperature reliability (abstract) |
15:50-16:10Coffee Break
16:10-17:30 Session F2-3: F2-3 - Power Devices and Microelectronic System: Reliability and Failure Analysis - F2-3 SiC and GaN Reliability
F2-3 SiC and GaN Reliability
Chairs:
Location: Amphitheatre Jean Touton
| 16:10 | Dynamic humidity testing of SiC power semiconductors (abstract) |
| 16:30 | Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications (abstract) |
| 16:50 | Optimal bonding of 4H-SiC parallel diodes in a single TO-247 package for improved surge current robustness: experimental investigation (abstract) |
| 17:10 | Investigation of Hole Traps Causing Negative Bias Instability in GaN Metal-Oxide-Semiconductor Field-Effect Transistors (abstract) |
20:00-23:00 Gala Dinner in Bordeaux
A pleasant dinner in Bordeaux
Thursday, October 9th
View this program: with abstractssession overviewtalk overview
08:30-10:30 Session F1: F1 - Power Devices and Microelectronic System: Reliability and Failure Analysis - F1 - Smart-power devices, IGBT, thyristors - Thermal & electrical characterization of power transistors
F1 - Smart-power devices, IGBT, thyristors,
Title : Thermal & electrical characterization of power transistors
Chairs:
Location: Amphitheatre Jean Touton
| 08:30 | Wire bonding technology : thermomechanical stresses characterisation and modelling (abstract) |
| 09:10 | Experimental Demonstration of Power Cycling Sensors Integrated into a Power Device Chip (abstract) |
| 09:30 | Direct Dynamic Measurement of Junction Temperature in Power Transistors (abstract) |
| 09:50 | Effect of the Load Inductor on the Avalanche Ruggedness of 1200-Volt Silicon Diodes during Unclamped Inductive Switching (abstract) |
| 10:10 | Junction-temperature measurement of an IGBT module in a sinusoidal PWM inverter with VCE(sat) including built-in voltage (abstract) |
09:10-10:30 Session I2: I2 - Extreme environments : Reliability and Radiation
Chairs:
Location: Salle Gabriel 1
| 09:10 | Soft Error Reliability Prediction of SRAM-based FPGA Designs (abstract) |
| 09:30 | Evaluating Pulsed X-ray-Induced Single-Event Effects in Deeply Buried Layers of 3D NAND Flash Memories (abstract) |
| 09:50 | Analyzing Cache Utilization for Improved System Reliability (abstract) |
| 10:10 | Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors (abstract) |
10:30-11:00Coffee Break
10:50-12:30 Session F3: F3 - Power Devices and Microelectronic System: Reliability and Failure Analysis - F3 - Power Electronic System
F3 - Power Electronic System
Chairs:
Location: Amphitheatre Jean Touton
| 10:50 | Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation (abstract) |
| 11:10 | Dynamic and Static Degradation Characteristic Analysis and Control Optimization of Three-Phase Inverters Considering Physics of Failure (abstract) |
| 11:30 | A New Online Monitoring Method to Detect Thermal Resistance via Turbo Sampling of Plateau Voltage (abstract) |
| 11:50 | Online Loss Assessment for Photovoltaic Inverter in High-Power Range: A Coupled Linear Temperature-Rise Model (abstract) |
| 12:10 | CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module (abstract) |