Talk Author Index

TALK AUTHOR INDEX

Shortcuts: A B C D E F G H I J K L M N O P R S T U V W X Y Z

A
Adebabay Belie, Ayenew	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Alam, Maroun	F2P8 Aging of p-GaN gate HEMTs under hard-switching conditions F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching
Alauzet, Louis	F2P5 Optimal Preconditional Voltages for SIC MOSFET Vth Measurement in the Aim of Temperature Measurement
Aldea, Emanuel	Data-driven Metamodels for Failure Analysis of Power Electronic Modules
Allirand, Laurence	Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching
Angelova, Yana	Dynamic humidity testing of SiC power semiconductors
Araujo, Vitor	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile
Arimura, Naomi	Seiwa Optical Europe GmbH
Azimi, Sarah	Soft Error Reliability Prediction of SRAM-based FPGA Designs
B
Bacchi, Matthew	CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Badetz, Adrien	CP3 Large STEM lamella optimisation in a dual beam on HEMT GaN technologies for reliability assessment
Baffreau, Stéphane	Inductance and capacitance parasitic prediction thanks to data analysis applied to SiC MOSFET wide frequency band characterization
Bartholomaueus, Lars	Direct Dynamic Measurement of Junction Temperature in Power Transistors
Basler, Thomas	Direct Dynamic Measurement of Junction Temperature in Power Transistors Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test
Ben-Dhia, Sonia	Long-Term Drift of a Bandgap Voltage Reference by Molding Compound Oxidation during Extended Thermal Aging
Bertao, Gabriel	Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test
Bevilacqua, Pascal	Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching
Binois, Christian	Evaluating Pulsed X-ray-Induced Single-Event Effects in Deeply Buried Layers of 3D NAND Flash Memories
Bizindavyi, Jasper	Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Blaquiere, Jean-Marc	CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Bleiker, Simon	Robustness of nano-electromechanical switches against the mechanical shock and vibration loads
Boccarossa, Marco	Effect of the Load Inductor on the Avalanche Ruggedness of 1200-Volt Silicon Diodes during Unclamped Inductive Switching
Boch, Jerome	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Boito, Mirco	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation
Borghese, Alessandro	Effect of the Load Inductor on the Avalanche Ruggedness of 1200-Volt Silicon Diodes during Unclamped Inductive Switching In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors Optimal bonding of 4H-SiC parallel diodes in a single TO-247 package for improved surge current robustness: experimental investigation
Bouarroudj, Mounira	Data-driven Metamodels for Failure Analysis of Power Electronic Modules
Bouexière, Chloé	CP3 Large STEM lamella optimisation in a dual beam on HEMT GaN technologies for reliability assessment
Bouhouche, Menel	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Boyer, Alexandre	Frequency Model Investigation for ESD failure prediction
Breglio, Giovanni	In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors
Breuer, Jakob	F2P2 Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of gate voltage
Brunner, Roland	From AI-powered Image Classification to GenAI: Possibilities for Modern Image-based Failure Analysis
Buffolo, Matteo	Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Bury, Erik	Reliability aspects of novel device architectures
C
C. O. Mendes, Caio	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile
Cacho, Florian	BP2 Thermal and Ageing Characterizations of 55nm SiGe HBT BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
Caignet, Fabrice	Frequency Model Investigation for ESD failure prediction
Calabretta, Michele	F2P6 Dynamic Gate Stress: Impact of Duty Cycle and Gate Resistance on Automotive Grade Planar-Gate 1200 V SiC MOSFET
Calmes, Pierre	CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Cao, Rui	CP4 Mechanism analysis and possible improvements for leak electricity failure caused by conductive silver paste bonding
Cappellini, Giacomo	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits
Capria, Ennio	Evaluating Pulsed X-ray-Induced Single-Event Effects in Deeply Buried Layers of 3D NAND Flash Memories
Caria, Alessandro	Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Castagna, Maria Eloisa	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Casu, Claudia	Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Ceresa, Carlo	Optimal bonding of 4H-SiC parallel diodes in a single TO-247 package for improved surge current robustness: experimental investigation
Chauvat, Marie-Pierre	CP5 Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip
Chen, Cen	AP2 Degradation modeling considering multiple performance parameters degradation based on mixed effects models Reliability Assessment of Systems with Multiple Performance Characteristic by Fusing Random Effects Wiener Processes with R-vine Copula F3-2 Dynamic and Static Degradation Characteristic Analysis and Control Optimization of Three-Phase Inverters Considering Physics of Failure
Chen, Cen	F2P4 A Novel Digital Twin Collaborative Power Cycling Test Method for SiC MOSFETs A4 Reliability Optimization of Three Phase Inverter Based on Model Predictive Control
Chen, Chuantong	Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission
Chen, Hao	F2P4 A Novel Digital Twin Collaborative Power Cycling Test Method for SiC MOSFETs AP2 Degradation modeling considering multiple performance parameters degradation based on mixed effects models
Chen, Peng-Meng	Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Chen, Yihan	AP1 A Bi-LSTM-Based Digital Twin Model for Photovoltaic Strings Under Current Mismatch Condition
Chen, Zi Jing	Stability Enhancement of MEMS Sensors Based on Time-Frequency Interleaving Analysis
Chevalier, Pascal	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Chini, Alessandro	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits
Chumakova, Aleksandra	Evaluating Pulsed X-ray-Induced Single-Event Effects in Deeply Buried Layers of 3D NAND Flash Memories
Chung, Kwansik	Thermally cycling-stable and highly heat-dissipative BGA packages manufactured by fluxless laser soldering: Experimental and numerical investigations
Cioni, Marcello	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits
Coccetti, Fabio	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels
Condamin, Bruno	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile
Coq Germanicus, Rosine	CP5 Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip
Cougo, Bernardo	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile Application-representative high-frequency power cycling of SiC power modules used in inverters and rectifiers Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications
Cousineau, Marc	CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Cova, Paolo	A3 Failure Prediction Through Testing Data Using Machine Learning Classification: A Smart Plug Top Case Study Assessment of Thermal Management Strategies for Prismatic LiFePO4 Batteries: a Test Bench Development
Crouard, Christale	F2P1 Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress
Cuenca-Asensi, Sergio	Analyzing Cache Utilization for Improved System Reliability
D
D'Alessandro, Vincenzo	Optimal bonding of 4H-SiC parallel diodes in a single TO-247 package for improved surge current robustness: experimental investigation
Dal Re, Massimo	A3 Failure Prediction Through Testing Data Using Machine Learning Classification: A Smart Plug Top Case Study
Daniele, Simone	A3 Failure Prediction Through Testing Data Using Machine Learning Classification: A Smart Plug Top Case Study
De, Sourav	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications
De Matos, Magali	BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
De Matos, Magali	BP2 Thermal and Ageing Characterizations of 55nm SiGe HBT
De Santi, Carlo	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Dedew, Mohamed Lemine	F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels
Dell'Andrea, Matteo	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Delmonte, Nicola	A3 Failure Prediction Through Testing Data Using Machine Learning Classification: A Smart Plug Top Case Study Assessment of Thermal Management Strategies for Prismatic LiFePO4 Batteries: a Test Bench Development
Derrier, Nicolas	BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
Dickson, Kristofor	Localization of Subtle Front-End FinFET Defects Using EBIC
Diouf, Ababacar	F2P8 Aging of p-GaN gate HEMTs under hard-switching conditions
Divan, Israel	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications
Dreher, Patrick	Long Term Transformation Of Cu / Sn Intermetallic Compounds in Large Solder Joints
Dresel, Fabian	F2P2 Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of gate voltage
Drummond, Rodrigo	Application-representative high-frequency power cycling of SiC power modules used in inverters and rectifiers Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications
Duan, Chao	CP4 Mechanism analysis and possible improvements for leak electricity failure caused by conductive silver paste bonding Analysis for an DA converter power up failure induced by process fluctuation
Duguay, Sébastien	Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test
E
Eckardt, Bernd	F2P2 Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of gate voltage
El Boubkari, Anas	CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Eustache, Etienne	Electrical Properties of Y2O3 for MEMS Applications Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches
F
Fang, Zhenyu	AP1 A Bi-LSTM-Based Digital Twin Model for Photovoltaic Strings Under Current Mismatch Condition
Fienga, Francesco	In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors
Fiore, Michele	F2P6 Dynamic Gate Stress: Impact of Duty Cycle and Gate Resistance on Automotive Grade Planar-Gate 1200 V SiC MOSFET
Foletto, Laura	Surface wearing in MEMS accelerometer after mechanical reliability stress tests: physical and electrical characterization
Fraccaroli, Riccardo	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination
Fradin, Jean-Pierre	F2P5 Optimal Preconditional Voltages for SIC MOSFET Vth Measurement in the Aim of Temperature Measurement
Fregolent, Manuel	Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation
Fregolent, Manuel	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Froissart, Sandrine	CP5 Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip
Frémont, Hélène	Characterization of the bulk moisture diffusion in epoxy-based potting compounds for IGBT semiconductor power modules
Fu, Yibo	Reliability Assessment of Systems with Multiple Performance Characteristic by Fusing Random Effects Wiener Processes with R-vine Copula
G
Galtié, Franck	SAFETY in cars
Gao, Junpeng	AP2 Degradation modeling considering multiple performance parameters degradation based on mixed effects models
Gerbino, Filippo	Assessment of Thermal Management Strategies for Prismatic LiFePO4 Batteries: a Test Bench Development
Gesell, Sören	Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test
Ghrabli, Mehdi	Data-driven Metamodels for Failure Analysis of Power Electronic Modules
Giannouri, Maria	Electrical Properties of Y2O3 for MEMS Applications Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches
Giorgino, Giovanni	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits
Gloria, Danien	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Goda, Koji	Junction-temperature measurement of an IGBT module in a sinusoidal PWM inverter with VCE(sat) including built-in voltage
Godillon, Jonathan	F2P1 Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress
González-Montesoro, Darío	Analyzing Cache Utilization for Improved System Reliability
Gopishetti, Anusha	Inductance and capacitance parasitic prediction thanks to data analysis applied to SiC MOSFET wide frequency band characterization
Grzes, Thomas	F2P8 Aging of p-GaN gate HEMTs under hard-switching conditions
Guillot, Laurent	Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits
Gustin, Wolfgang	Direct Dynamic Measurement of Junction Temperature in Power Transistors
Guédon-Gracia, Alexandrine	Characterization of the bulk moisture diffusion in epoxy-based potting compounds for IGBT semiconductor power modules
H
Hagelauer, Amelie	Hot-carrier stress in n-type logic CMOS devices at temperatures down to the deep-cryogenic regime
Hai, Jocelyn	BP2 Thermal and Ageing Characterizations of 55nm SiGe HBT
Han, Seonghui	Thermally cycling-stable and highly heat-dissipative BGA packages manufactured by fluxless laser soldering: Experimental and numerical investigations
Han, Wooseok	Bidirectional 1D-CNN Model Based Failure Current Classification with open-set recognition
Hasegawa, Kazunori	Junction-temperature measurement of an IGBT module in a sinusoidal PWM inverter with VCE(sat) including built-in voltage
Hasegawa, Kazuya	10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface
Hayashi, Shin-Ichiro	Gate Oxide TDDB Lifetime Evaluation of SiC MOSFETs by HTGB Test Using Square Wave Voltage
Heimler, Patrick	Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test
Heinemann, Marc	SmarAct Metrology
Hoan, Tran Duc	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile Application-representative high-frequency power cycling of SiC power modules used in inverters and rectifiers Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications
Hoang, Minh Long	A3 Failure Prediction Through Testing Data Using Machine Learning Classification: A Smart Plug Top Case Study
Hoelbe, Oliver	Dynamic humidity testing of SiC power semiconductors
Hoffmann, Alain	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Hofmann, Maximilian	EP6 A Comprehensive 3-D FEM Based Numerical Lifetime Investigation on the Effect of Bond Wire Loop Ratio on Molded Power Electronics Assemblies
Hsuen, Jing-Hua	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications
Huang, Ambrogio	Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination
Hållstedt, Julius	Excillum
I
Iannuzzo, Francesco	F2P6 Dynamic Gate Stress: Impact of Duty Cycle and Gate Resistance on Automotive Grade Planar-Gate 1200 V SiC MOSFET
Iguchi, Hiroko	Investigation of Hole Traps Causing Negative Bias Instability in GaN Metal-Oxide-Semiconductor Field-Effect Transistors
Im, Taeyoon	EP2 Microstructural and Reliability Analysis of SAC305/Sn-57Bi-1Ag Composite Solder Joints with Different Printing Aspect Ratios
Indmeskine, Fatima-Ezahra	Reliability Assessment of SMD Tantalum Capacitors for Active Implantable Medical Devices: A Methodology Based on ALT and DoE
Ioana Popovici, Mihaela	Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Irace, Andrea	Effect of the Load Inductor on the Avalanche Ruggedness of 1200-Volt Silicon Diodes during Unclamped Inductive Switching In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors Optimal bonding of 4H-SiC parallel diodes in a single TO-247 package for improved surge current robustness: experimental investigation
Ito, Kenji	Investigation of Hole Traps Causing Negative Bias Instability in GaN Metal-Oxide-Semiconductor Field-Effect Transistors
Iucolano, Ferdinando	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Iwasaki, Shiro	Investigation of Hole Traps Causing Negative Bias Instability in GaN Metal-Oxide-Semiconductor Field-Effect Transistors
J
Jacqueline, Sébastien	CP5 Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip
Jakuza, Paola	Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Jeong, Uihyo	EP1 Standardized Test Method for Pure Bending Evaluation of Foldable Display Materials Under Natural-Arc Folding
Jiang, Tingzhi	AP3 Autoencoder-Driven State-of-Health Estimation for Lithium-Ion Batteries via Dynamic Relaxation Time Distribution Features from Electrochemical Impedance Spectroscopy Online Loss Assessment for Photovoltaic Inverter in High-Power Range: A Coupled Linear Temperature-Rise Model
Jo, Ikhyun	EP1 Standardized Test Method for Pure Bending Evaluation of Foldable Display Materials Under Natural-Arc Folding
Ju, Byeong Kwon	EP3 Thermo-mechanical reliability of transfer molded TO-247-3L packages with Ag nanoporous sheet bonding
K
Kalkouski, Uladzimir	CP1 Process-related challenges in the formation of SiO2 layers by chemical vapour deposition for MEMS applications BP3 Sodium in amorphous and crystalline Ta2O5
Kamath, Prashanth Prakash	EP6 A Comprehensive 3-D FEM Based Numerical Lifetime Investigation on the Effect of Bond Wire Loop Ratio on Molded Power Electronics Assemblies
Karanja, Liz	In-situ TEM investigation of thermomechanical fatigue of thick copper metallizations
Katsura, Akihiro	Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission
Ke, Chao-Yang	Power-Rail ESD Clamp Circuit With Modified Inverter Structure for Monolithic GaN-Based Integrated Circuits
Kemystetter, Lucas	Frequency Model Investigation for ESD failure prediction
Ker, Ming-Dou	Power-Rail ESD Clamp Circuit With Modified Inverter Structure for Monolithic GaN-Based Integrated Circuits
Khatibi, Golta	EP7 Lifetime evaluation of wire bonds in LED systems by modelling and accelerated testing
Kikuta, Daigo	Investigation of Hole Traps Causing Negative Bias Instability in GaN Metal-Oxide-Semiconductor Field-Effect Transistors
Kim, Byeongchan	EP4 High temperature environment reliability of in-air Cu sintered and transfer molded TO-247-3L packages for automotive applications
Kim, Dongjin	EP5 Thermal stability of direct cooling structures for power electronics using instantaneous laser soldering: CFD cooling performance verification with and without void EP4 High temperature environment reliability of in-air Cu sintered and transfer molded TO-247-3L packages for automotive applications EP3 Thermo-mechanical reliability of transfer molded TO-247-3L packages with Ag nanoporous sheet bonding Thermally cycling-stable and highly heat-dissipative BGA packages manufactured by fluxless laser soldering: Experimental and numerical investigations
Kim, Eunchae	Thermally cycling-stable and highly heat-dissipative BGA packages manufactured by fluxless laser soldering: Experimental and numerical investigations
Kim, Jahyeon	EP2 Microstructural and Reliability Analysis of SAC305/Sn-57Bi-1Ag Composite Solder Joints with Different Printing Aspect Ratios
Kim, Juno	Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission
Kim, Minsu	Microstructural analysis of the Ag/graphene-coated-Cu composite sinter paste in high-temperature reliability
Kim, Shin-Il	EP5 Thermal stability of direct cooling structures for power electronics using instantaneous laser soldering: CFD cooling performance verification with and without void
Kim, Yehri	EP4 High temperature environment reliability of in-air Cu sintered and transfer molded TO-247-3L packages for automotive applications EP3 Thermo-mechanical reliability of transfer molded TO-247-3L packages with Ag nanoporous sheet bonding
Kleinhans, Markus	Direct Dynamic Measurement of Junction Temperature in Power Transistors
Klier, Johannes	F2P2 Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of gate voltage
Ko, Yong-Ho	EP2 Microstructural and Reliability Analysis of SAC305/Sn-57Bi-1Ag Composite Solder Joints with Different Printing Aspect Ratios
Kobi, Abdessamad	Reliability Assessment of SMD Tantalum Capacitors for Active Implantable Medical Devices: A Methodology Based on ALT and DoE
Kochylas, Ioannis	Electrical Properties of Y2O3 for MEMS Applications Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches
Kollmuss, Manuel	Direct Dynamic Measurement of Junction Temperature in Power Transistors
Konishi, Yoshikazu	Gate Oxide TDDB Lifetime Evaluation of SiC MOSFETs by HTGB Test Using Square Wave Voltage
Konstantinidis, George	On the self-actuation reliability issue in high-power RF MEMS
Kovacevic-Badstuebner, Ivana	Characterization Methods for Evaluating Charge Carrier Trapping Mechanisms of SiC Power MOSFETs
Kulsreshath, Mukesh	Robustness of nano-electromechanical switches against the mechanical shock and vibration loads
Kumar, Rustam	Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation
Kämpfe, Thomas	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications
L
Labalette, Marina	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile
Lakhdara, Maya	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Lakshman Mysore, Madhu	Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test
Lallemand, Florent	CP5 Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip
Lambert, Adrien	Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits
Lambert, Bneoit	CP3 Large STEM lamella optimisation in a dual beam on HEMT GaN technologies for reliability assessment Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test
Latry, Olivier	Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test
Le, Thanh-Long	F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels Inductance and capacitance parasitic prediction thanks to data analysis applied to SiC MOSFET wide frequency band characterization
Le Baillif, Matthieu	On the self-actuation reliability issue in high-power RF MEMS
Lederer, Maximilian	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications
Leduc, Charles	Opsens Solutions
Lee, Sangmin	Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission
Lee, Seoyeong	Microstructural analysis of the Ag/graphene-coated-Cu composite sinter paste in high-temperature reliability
Lefebvre, Stéphane	F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels
Legros, Marc	In-situ TEM investigation of thermomechanical fatigue of thick copper metallizations
Leib, Jürgen	F2P2 Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of gate voltage EP6 A Comprehensive 3-D FEM Based Numerical Lifetime Investigation on the Effect of Bond Wire Loop Ratio on Molded Power Electronics Assemblies
Li, Muyuan	EP7 Lifetime evaluation of wire bonds in LED systems by modelling and accelerated testing
Li, Yingying	Robustness of nano-electromechanical switches against the mechanical shock and vibration loads
Lim, Seongyong	EP1 Standardized Test Method for Pure Bending Evaluation of Foldable Display Materials Under Natural-Arc Folding
Lin, Chiung-Yuan	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Listl, Stefan	EP7 Lifetime evaluation of wire bonds in LED systems by modelling and accelerated testing
Liu, Da Tong	Stability Enhancement of MEMS Sensors Based on Time-Frequency Interleaving Analysis
Liu, Hsien-Yang	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Liu, Weiming	F3-2 Dynamic and Static Degradation Characteristic Analysis and Control Optimization of Three-Phase Inverters Considering Physics of Failure
Longato, Simone	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation
Luberto, Alessandro	Surface wearing in MEMS accelerometer after mechanical reliability stress tests: physical and electrical characterization
Ludovic, Chamoin	Data-driven Metamodels for Failure Analysis of Power Electronic Modules
Lutz, Josef	Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test
Lyu, He	I2P1 Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices
M
M. F. Morais, Lenin	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile
Ma, Mingyao	AP3 Autoencoder-Driven State-of-Health Estimation for Lithium-Ion Batteries via Dynamic Relaxation Time Distribution Features from Electrochemical Impedance Spectroscopy Online Loss Assessment for Photovoltaic Inverter in High-Power Range: A Coupled Linear Temperature-Rise Model AP1 A Bi-LSTM-Based Digital Twin Model for Photovoltaic Strings Under Current Mismatch Condition
Ma, Wenting	AP1 A Bi-LSTM-Based Digital Twin Model for Photovoltaic Strings Under Current Mismatch Condition
Mahjoub, Aymen	Electrical Properties of Y2O3 for MEMS Applications
Mahjoub, Aymen	Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches
Maneux, Cristell	BP2 Thermal and Ageing Characterizations of 55nm SiGe HBT
Maneux, Cristell	BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
Mansouri, Yasser	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Manzotti, Matteo	Surface wearing in MEMS accelerometer after mechanical reliability stress tests: physical and electrical characterization
Maraine, Tadec	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Marc, François	Comparison of semi empirical modelling of FinFET FPGA ageing based on high stress short time with 20000 hours low stress measures
Marcault, Emmanuel	F2P8 Aging of p-GaN gate HEMTs under hard-switching conditions
Marceau, Hélène	Reliability Assessment of SMD Tantalum Capacitors for Active Implantable Medical Devices: A Methodology Based on ALT and DoE
Maresca, Luca	Effect of the Load Inductor on the Avalanche Ruggedness of 1200-Volt Silicon Diodes during Unclamped Inductive Switching In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors
Marina Alonzo, Edinso Gabriel	Long-Term Drift of a Bandgap Voltage Reference by Molding Compound Oxidation during Extended Thermal Aging
Marozau, Ivan	Robustness of nano-electromechanical switches against the mechanical shock and vibration loads
Marrazzo, Vincenzo Romano	In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors
Martinez-Alvarez, Antonio	Analyzing Cache Utilization for Improved System Reliability
Martins, Jose Paolo	Electrical Properties of Y2O3 for MEMS Applications Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches On the self-actuation reliability issue in high-power RF MEMS
Mauromicale, Giuseppe	F2P6 Dynamic Gate Stress: Impact of Duty Cycle and Gate Resistance on Automotive Grade Planar-Gate 1200 V SiC MOSFET
Mei, Bo	I2P1 Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices
Mejecaze, Guillaume	Frequency Model Investigation for ESD failure prediction
Meknassi, El Mehdi	Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test
Meneghesso, Gaudenzio	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Meneghesso, Gaudenzio	Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination
Meneghesso, Gaudenzio	Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation
Meneghini, Matteo	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Meng, Meng	CP2 Case Analysis and Research on the Failure of Chip Passivation Layer Defects under the Comprehensive External Environmental Stresses
Meng, Meng	CP4 Mechanism analysis and possible improvements for leak electricity failure caused by conductive silver paste bonding
Meng, Sheng Wei	Stability Enhancement of MEMS Sensors Based on Time-Frequency Interleaving Analysis
Messoudi, Meryem	CP5 Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip
Miccoli, Cristina	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Michalas, Loukas	On the self-actuation reliability issue in high-power RF MEMS
Modica, Lorenzo	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits
Morel, Hervé	F2P8 Aging of p-GaN gate HEMTs under hard-switching conditions Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching
Moser, Sebastian	In-situ TEM investigation of thermomechanical fatigue of thick copper metallizations
Moultif, Niemat	Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test
Mukherjee, Chhandak	BP2 Thermal and Ageing Characterizations of 55nm SiGe HBT BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
Muraoka, Shu	Gate Oxide TDDB Lifetime Evaluation of SiC MOSFETs by HTGB Test Using Square Wave Voltage
Müller, Johannes	Influencing Factors on the Dynamic VSD Behaviour of different SiC-MOSFET Technologies used for Temperature Read-Out via VSD(T)-Method during the Power Cycling Test
N
Nakagiri, Takuya	Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission
Nakamura, Koji	A New Online Monitoring Method to Detect Thermal Resistance via Turbo Sampling of Plateau Voltage
Narita, Tetsuo	Investigation of Hole Traps Causing Negative Bias Instability in GaN Metal-Oxide-Semiconductor Field-Effect Transistors
Narita, Tetsuo	10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface
Ngabonziza, Albert	On the self-actuation reliability issue in high-power RF MEMS
Nguyen, Tien Anh	F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels
Nijhuis, Marc	Eurofins MASER
Niklaus, Frank	Robustness of nano-electromechanical switches against the mechanical shock and vibration loads
Nishii, Junya	10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface
Nishizawa, Shin-Ichi	Experimental Demonstration of Power Cycling Sensors Integrated into a Power Device Chip
Niwa, Takaki	10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface
O
Okame, Koki	Experimental Demonstration of Power Cycling Sensors Integrated into a Power Device Chip
Oliveira, Joao	F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels
Oliveira de Sousa, Renata	F3P2 Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile
Ouhab, Merouane	Wire bonding technology : thermomechanical stresses characterisation and modelling
P
Pace, Loris	F2P8 Aging of p-GaN gate HEMTs under hard-switching conditions
Pamunuwa, Dinesh	Robustness of nano-electromechanical switches against the mechanical shock and vibration loads
Pan, Nianan	Online Loss Assessment for Photovoltaic Inverter in High-Power Range: A Coupled Linear Temperature-Rise Model
Papaioannou, George	Electrical Properties of Y2O3 for MEMS Applications Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches
Pascal, Fabien	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Pattini, Francesco	Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Peis, Jonas	Hot-carrier stress in n-type logic CMOS devices at temperatures down to the deep-cryogenic regime
Pfefer, Yvan	Sector Technologies
Phung, Luong-Viet	Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits
Pichon, Pierre-Yves	Characterization of the bulk moisture diffusion in epoxy-based potting compounds for IGBT semiconductor power modules
Pieprzyk, Jean-François	F2P1 Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress
Pirani, Alessio	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Piva, Francesco	Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Pizzo, Giansalvo	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Planson, Dominique	Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits
Possamai-Bastos, Rodrigo	Analyzing Cache Utilization for Improved System Reliability
Pradeau, Maxime	BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
Prigann, Sven	Direct Dynamic Measurement of Junction Temperature in Power Transistors
Puybaret, Frédéric	Frequency Model Investigation for ESD failure prediction
R
Raffel, Yannick	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications
Rampino, Stefano	Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Reda, Sara	Surface wearing in MEMS accelerometer after mechanical reliability stress tests: physical and electrical characterization
Reisinger, Hans	Direct Dynamic Measurement of Junction Temperature in Power Transistors
Reisinger, Michael	In-situ TEM investigation of thermomechanical fatigue of thick copper metallizations
Rhee, Minwoo Daniel	Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission
Riccio, Michele	Effect of the Load Inductor on the Avalanche Ruggedness of 1200-Volt Silicon Diodes during Unclamped Inductive Switching In-Situ Monitoring of Package Strain During HTRB Test based on Fiber Optic Sensors
Richardeau, Frédéric	In-Depth 2D FEM Analysis of Gate Cracking in SiC MOSFETs Under Repetitive Short-Circuit Conditions: Application of the Rankine Model for Crack Length Prediction CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Ronchi, Nicolò	Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Rongen, René Theodora Hubertus	Long-Term Drift of a Bandgap Voltage Reference by Molding Compound Oxidation during Extended Thermal Aging
Rossetto, Isabella	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Rouger, Nicolas	CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Ruffat, François	Frequency Model Investigation for ESD failure prediction
Russo, Alfio	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Rustichelli, Valeria	F2P8 Aging of p-GaN gate HEMTs under hard-switching conditions F2P3 Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching
Ryu, Sangwoo	Microstructural analysis of the Ag/graphene-coated-Cu composite sinter paste in high-temperature reliability
Réveil, Lucas	BP2 Thermal and Ageing Characterizations of 55nm SiGe HBT BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
S
Sagnes, Bruno	Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
Saintis, Laurent	Reliability Assessment of SMD Tantalum Capacitors for Active Implantable Medical Devices: A Methodology Based on ALT and DoE
Saito, Wataru	Experimental Demonstration of Power Cycling Sensors Integrated into a Power Device Chip Junction-temperature measurement of an IGBT module in a sinusoidal PWM inverter with VCE(sat) including built-in voltage A New Online Monitoring Method to Detect Thermal Resistance via Turbo Sampling of Plateau Voltage
Salmen, Paul	Dynamic humidity testing of SiC power semiconductors
Sander, Mathias	Evaluating Pulsed X-ray-Induced Single-Event Effects in Deeply Buried Layers of 3D NAND Flash Memories
Santana Pinto De Morais, Rafael Jose	Surface wearing in MEMS accelerometer after mechanical reliability stress tests: physical and electrical characterization
Santoro, Danilo	A3 Failure Prediction Through Testing Data Using Machine Learning Classification: A Smart Plug Top Case Study Assessment of Thermal Management Strategies for Prismatic LiFePO4 Batteries: a Test Bench Development
Sarafinof, Arthur	BP2 Thermal and Ageing Characterizations of 55nm SiGe HBT BP1 Non-destructive characterization of Breakdown Voltage measurement and Application on a 55nm SiGe HBT featuring fT/fMAX of 400GHz/500GHz
Sarazin, Nicolas	CP3 Large STEM lamella optimisation in a dual beam on HEMT GaN technologies for reliability assessment
Sarraute, Emmanuel	In-Depth 2D FEM Analysis of Gate Cracking in SiC MOSFETs Under Repetitive Short-Circuit Conditions: Application of the Rankine Model for Crack Length Prediction
Saugnon, Damien	Robustness of GaN LNAs under Ku-band jamming signal: understanding the weak point to design future robust LNAs
Schilling, Oliver	F3P3 Influence of cooling conditions on estimated power cycling lifetime for the large-area substrate solder joint in power modules Dynamic humidity testing of SiC power semiconductors
Schletz, Andreas	F2P2 Transient junction temperature measurement error of SiC MOSFETs in power cycling – Influence of gate voltage
Schlipf, Johannes	Direct Dynamic Measurement of Junction Temperature in Power Transistors
Schmidt, Hagen	Evaluating Pulsed X-ray-Induced Single-Event Effects in Deeply Buried Layers of 3D NAND Flash Memories
Sciancalepore, Corrado	Assessment of Thermal Management Strategies for Prismatic LiFePO4 Batteries: a Test Bench Development
Segond, Gilles	Modeling and measurement of high frequency temperature variation of GaN transistors for inverter and rectifier applications
Seidel, Konrad	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications
Seilmeier, Florian	Hot-carrier stress in n-type logic CMOS devices at temperatures down to the deep-cryogenic regime
Seltsam, Johannes	Long Term Transformation Of Cu / Sn Intermetallic Compounds in Large Solder Joints
Serafini, Andrea	Surface wearing in MEMS accelerometer after mechanical reliability stress tests: physical and electrical characterization
Serrano-Cases, Alejandro	Analyzing Cache Utilization for Improved System Reliability
Shiozaki, Koji	10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface
Shqair, Mustafa	In-Depth 2D FEM Analysis of Gate Cracking in SiC MOSFETs Under Repetitive Short-Circuit Conditions: Application of the Rankine Model for Crack Length Prediction
Sippel, Marcel	Long Term Transformation Of Cu / Sn Intermetallic Compounds in Large Solder Joints
Sitta, Alessandro	F2P6 Dynamic Gate Stress: Impact of Duty Cycle and Gate Resistance on Automotive Grade Planar-Gate 1200 V SiC MOSFET
Smith, Andrew Jonathan	Kleindiek Nanotechnik
Sobas, Justin	Comparison of semi empirical modelling of FinFET FPGA ageing based on high stress short time with 20000 hours low stress measures
Song, Qiwei	Online Loss Assessment for Photovoltaic Inverter in High-Power Range: A Coupled Linear Temperature-Rise Model
Song, Yu Chen	Stability Enhancement of MEMS Sensors Based on Time-Frequency Interleaving Analysis
Sopp, David	Long Term Transformation Of Cu / Sn Intermetallic Compounds in Large Solder Joints
Spaggiari, Davide	Assessment of Thermal Management Strategies for Prismatic LiFePO4 Batteries: a Test Bench Development
Stavrinidis, George	On the self-actuation reliability issue in high-power RF MEMS
Sterpone, Luca	Soft Error Reliability Prediction of SRAM-based FPGA Designs
Stickelmann, Uwe	Dynamic humidity testing of SiC power semiconductors
Strasser, Marc	Direct Dynamic Measurement of Junction Temperature in Power Transistors Hot-carrier stress in n-type logic CMOS devices at temperatures down to the deep-cryogenic regime
Suganuma, Katsuaki	Real-time detection of fracture mode at the direct bonded Chevron-notch Si chip via acoustic emission
Sun, Jiajia	CP2 Case Analysis and Research on the Failure of Chip Passivation Layer Defects under the Comprehensive External Environmental Stresses
Sun, Qisen	AP2 Degradation modeling considering multiple performance parameters degradation based on mixed effects models
Sánchez López, Luis Alfredo	EP7 Lifetime evaluation of wire bonds in LED systems by modelling and accelerated testing
T
Tadano, Hiroshi	10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface
Tanaka, Nariaki	10 kW Inverter with Vertical-GaN Trench MOSFETs and Its Operation Instability Related to MOS Interface
Tang, Qi	Robustness of nano-electromechanical switches against the mechanical shock and vibration loads
Tartarin, Jean-Guy	Robustness of GaN LNAs under Ku-band jamming signal: understanding the weak point to design future robust LNAs
Terracciano, Vincenzo	Effect of the Load Inductor on the Avalanche Ruggedness of 1200-Volt Silicon Diodes during Unclamped Inductive Switching Optimal bonding of 4H-SiC parallel diodes in a single TO-247 package for improved surge current robustness: experimental investigation
Theocharis, John	Electrical Properties of Y2O3 for MEMS Applications Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches
Théolier, Loïc	Characterization of the bulk moisture diffusion in epoxy-based potting compounds for IGBT semiconductor power modules
Tomas, Ariane	Characterization of the bulk moisture diffusion in epoxy-based potting compounds for IGBT semiconductor power modules
Tomita, Kazuyoshi	Investigation of Hole Traps Causing Negative Bias Instability in GaN Metal-Oxide-Semiconductor Field-Effect Transistors
Tounsi, Patrick	F2P5 Optimal Preconditional Voltages for SIC MOSFET Vth Measurement in the Aim of Temperature Measurement F2P1 Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress Long-Term Drift of a Bandgap Voltage Reference by Molding Compound Oxidation during Extended Thermal Aging
Tournier, Dominique	Analysis of robustness of 650 V GaN HEMT under repetitive short-circuits
Trivellin, Nicola	Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Tuellmann, Marc	Dynamic humidity testing of SiC power semiconductors
Turpin, Pierre	Long-Term Drift of a Bandgap Voltage Reference by Molding Compound Oxidation during Extended Thermal Aging
U
Uebelacker, David	F3P3 Influence of cooling conditions on estimated power cycling lifetime for the large-area substrate solder joint in power modules
Ueda, Hisaki	Junction-temperature measurement of an IGBT module in a sinusoidal PWM inverter with VCE(sat) including built-in voltage
V
Vacca, Eleonora	Soft Error Reliability Prediction of SRAM-based FPGA Designs
Vadebout, Thomas	Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching
Van Houdt, Jan	Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Verzellesi, Giovanni	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits
Vidal, Paul-Etienne	Inductance and capacitance parasitic prediction thanks to data analysis applied to SiC MOSFET wide frequency band characterization
Vinnac, Sebastien	CMOS Gate Driver with Fully Integrated Fast and Robust Gate Monitoring Solution for a Full Short-Circuit Protection of SiC Power Module
Viné, Guillaume	Inductance and capacitance parasitic prediction thanks to data analysis applied to SiC MOSFET wide frequency band characterization
W
Wada, Keiji	Gate Oxide TDDB Lifetime Evaluation of SiC MOSFETs by HTGB Test Using Square Wave Voltage
Walter, Thomas	EP7 Lifetime evaluation of wire bonds in LED systems by modelling and accelerated testing
Wang, Bo	I2P1 Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices
Wang, Chenyi	F2P4 A Novel Digital Twin Collaborative Power Cycling Test Method for SiC MOSFETs A4 Reliability Optimization of Three Phase Inverter Based on Model Predictive Control Reliability Assessment of Systems with Multiple Performance Characteristic by Fusing Random Effects Wiener Processes with R-vine Copula F3-2 Dynamic and Static Degradation Characteristic Analysis and Control Optimization of Three-Phase Inverters Considering Physics of Failure
Wang, Guodong	Reliability Assessment of Systems with Multiple Performance Characteristic by Fusing Random Effects Wiener Processes with R-vine Copula
Wang, Haodong	F2P4 A Novel Digital Twin Collaborative Power Cycling Test Method for SiC MOSFETs A4 Reliability Optimization of Three Phase Inverter Based on Model Predictive Control
Wang, Shujuan	F3-2 Dynamic and Static Degradation Characteristic Analysis and Control Optimization of Three-Phase Inverters Considering Physics of Failure
Wang, Xu	CP2 Case Analysis and Research on the Failure of Chip Passivation Layer Defects under the Comprehensive External Environmental Stresses
Watabe, Kiyoto	A New Online Monitoring Method to Detect Thermal Resistance via Turbo Sampling of Plateau Voltage
Wei, Junping	A4 Reliability Optimization of Three Phase Inverter Based on Model Predictive Control
Wei, Yujun	Investigation of RF Stress on the Characteristics of GaN-on-Si HEMTs
Wei, Zhichao	I2P1 Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices
Weulerssec, Cécile	Evaluating Pulsed X-ray-Induced Single-Event Effects in Deeply Buried Layers of 3D NAND Flash Memories
Wu, Jiacheng	AP3 Autoencoder-Driven State-of-Health Estimation for Lithium-Ion Batteries via Dynamic Relaxation Time Distribution Features from Electrochemical Impedance Spectroscopy
Wu, Tian-Li	Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Wu, Zhaoxi	CP4 Mechanism analysis and possible improvements for leak electricity failure caused by conductive silver paste bonding Analysis for an DA converter power up failure induced by process fluctuation
Wurz, Marc	Reliability tests of an atom chip for quantum gravimetry
X
Xiao, Kaiwen	F3-2 Dynamic and Static Degradation Characteristic Analysis and Control Optimization of Three-Phase Inverters Considering Physics of Failure
Xu, Qian	AP3 Autoencoder-Driven State-of-Health Estimation for Lithium-Ion Batteries via Dynamic Relaxation Time Distribution Features from Electrochemical Impedance Spectroscopy
Xue, Pengchao	I2P1 Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices
Y
Yamaguchi, Yuki	JEOL (EUROPE) SAS
Yang, Zhibo	I2P1 Space Flight Demonstration of Enhanced Low Dose Rate Sensitivity Effect on devices
Ye, Xuerong	F2P4 A Novel Digital Twin Collaborative Power Cycling Test Method for SiC MOSFETs
Ye, Xuerong	AP2 Degradation modeling considering multiple performance parameters degradation based on mixed effects models
Yoo, Sehoon	Thermally cycling-stable and highly heat-dissipative BGA packages manufactured by fluxless laser soldering: Experimental and numerical investigations
Yu, Chen-Yu	Investigation of TiO2 Seed Layer for Enhancing the Uniformity of Remanent Polarization and Time-Dependent Dielectric Breakdown in La-doped Ferroelectric HZO MFM Devices
Yu, Dongyurl	EP2 Microstructural and Reliability Analysis of SAC305/Sn-57Bi-1Ag Composite Solder Joints with Different Printing Aspect Ratios
Yu, Ha-Young	EP5 Thermal stability of direct cooling structures for power electronics using instantaneous laser soldering: CFD cooling performance verification with and without void
Yuan, Shao Chong	Stability Enhancement of MEMS Sensors Based on Time-Frequency Interleaving Analysis
Z
Zagni, Nicolo	F2P7 Impact of OFF-State Stress on RON and VTH of 100-V GaN HEMTs Mimicking Monolithically-Integrated Half-Bridge Circuits
Zanoni, Enrico	Degradation causes of medium-power, high Color Rendering Index LEDs for indoor illumination
Zanoni, Enrico	Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
Zanoni, Enrico	Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation Hotspot analysis on a flexible PV mini-modules based on IBC solar cells
Zhai, Guofu	AP2 Degradation modeling considering multiple performance parameters degradation based on mixed effects models Reliability Assessment of Systems with Multiple Performance Characteristic by Fusing Random Effects Wiener Processes with R-vine Copula F3-2 Dynamic and Static Degradation Characteristic Analysis and Control Optimization of Three-Phase Inverters Considering Physics of Failure
Zhang, Leiun	CP4 Mechanism analysis and possible improvements for leak electricity failure caused by conductive silver paste bonding
Zhang, Maolin	CP4 Mechanism analysis and possible improvements for leak electricity failure caused by conductive silver paste bonding
Zhang, Rui	AP1 A Bi-LSTM-Based Digital Twin Model for Photovoltaic Strings Under Current Mismatch Condition
Zhao, Dawei	EP6 A Comprehensive 3-D FEM Based Numerical Lifetime Investigation on the Effect of Bond Wire Loop Ratio on Molded Power Electronics Assemblies
Zhou, Zhenning	A4 Reliability Optimization of Three Phase Inverter Based on Model Predictive Control
Ziaei, Afshin	Electrical Properties of Y2O3 for MEMS Applications Impedance spectroscopy of field-emission and resistive switching in MEMS capacitive switches On the self-actuation reliability issue in high-power RF MEMS
Zöllner, Nils	F3P3 Influence of cooling conditions on estimated power cycling lifetime for the large-area substrate solder joint in power modules