TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
( | |
(TLP) | |
1 | |
1-Dimensional Convolutional Neural Network | |
16 nm FinFET | |
2 | |
2D FEM | |
3 | |
3D stacked devices | |
4 | |
4H-SiC | |
5 | |
55nm HBT SiGe | |
A | |
Abnormal Leakage | |
Accelerated Life Tests | |
accelerated mechanical fatigue testing | |
Acoustic emission | |
Activation energy | |
Active Implantable Medical Devices | |
adaptive compensation | |
Adhesion forces modelling | |
AFM | |
Ag porous sheet bonding | |
agglomeration of Ag particles | |
Aging | |
Anti-adhesion coating | |
ARM | |
Artificial intelligence | |
Autoencoder | |
Automotive | |
avalanche ruggedness | |
B | |
Bandgap Circuit | |
bandgap reference circuit | |
Barrier Traps | |
Base current degradation | |
Battery degradation | |
Bi-LSTM | |
Bipolar Junction Transistors | |
Bond line thickness | |
Bond wire | |
bond wires | |
Bond-wire degradation | |
Bonding strength | |
breakdown field | |
Breakdown Voltage | |
Breakdown Voltage ageing | |
BTI | |
BVCBO | |
BVCEO | |
C | |
cache | |
CAD | |
capaciatnce | |
capacitance | |
CFD simulation | |
Characterization of Intermetallic Compounds | |
Charge carrier trapping | |
chip packaging; | |
Chip-Package-Interaction | |
Classification algorithm | |
CMOS | |
Color Rendering Index | |
Comparison between model extrapolation and measurement | |
Composite solder joint | |
Condition Monitoring | |
cooling conditions | |
Cooling system status | |
Copper film | |
Cracks | |
cryo-CMOS | |
cryogenic temperatures | |
Cu sintering | |
current | |
current classification | |
current mismatch | |
current prediction | |
Current Sensing | |
Cycling | |
D | |
DA converter | |
Damage Prediction | |
DC Forward stress | |
DC Stress | |
Decapsulation | |
defects | |
Degradation | |
Degradation modeling | |
degradations | |
Design of Experiments | |
Detection and Characterization of Solder Defects | |
Detection System | |
Diagnostic circuit | |
diffusion length | |
digital twin | |
Digital-analog co-simulation | |
Direct cooling | |
Distribution of Relaxation Times | |
DPT | |
DualBeam | |
Duty Cycle | |
dynamic | |
dynamic calibration | |
Dynamic Gate Stress | |
dynamic high-temperature operating life | |
Dynamic RON | |
Dynamic VSD Behaviour | |
E | |
Early-life | |
ELDRS | |
Electric field | |
Electrical Characterization | |
Electrical drift | |
electrical measurements | |
Electrical stress | |
Electrochemical impedance spectroscopy | |
Electroluminescence (EL) | |
electron inversion channel | |
Electrothermal model | |
EMC and PMC process | |
emerging devices | |
EMMI | |
Epoxy potting resin | |
ESD protection | |
ESD protection modeling | |
Extreme Value Distribution | |
F | |
Failure | |
Failure analysis | |
Failure analysis | |
failure analysis; | |
Failure investigation | |
Failure mechanisms | |
failure physics | |
Failure probability | |
Fault tolerance | |
Fault Under Load | |
Faults Locating | |
FEM simulation | |
FEM simulations | |
Ferroelectric | |
Ferroelectric FET | |
FIB | |
fiber Bragg grating sensor | |
field emission | |
Finite element simulations | |
Flexible c-Si PV Modules | |
Fluxless packaging | |
FMMEA | |
foldable displays | |
foldable materials | |
folding path | |
Foot lift-off | |
FPGA ageing | |
Fracture toughness | |
Fracutre mode | |
G | |
GAA MOSFET | |
Gallium Nitride | |
GaN | |
GaN HEMT | |
GaN HEMTs | |
GaN MMIC | |
Gate Driver | |
Gate Oxide TDDB | |
Gate Resistance | |
Gate-Crack Modeling | |
Graphene coating | |
H | |
Half-Bridge | |
Hard Switch Fault | |
hard-switching | |
HCS | |
Heat dissipation | |
Heel crack | |
HEMT | |
HiCuM | |
High Frequency Power Cycling | |
High Power | |
High temperature | |
High temperature reliability | |
high temperature reverse bias | |
High-power operation | |
High-Temperature | |
High-Temperature Gate Bias | |
Hole Redistribution Model | |
hole trap | |
hot carrier | |
Hot-Carrier | |
hot-carrier degradation | |
Hotspots | |
HS | |
HTOL | |
Human body model (HBM) | |
humidity | |
I | |
IGBTs | |
Impact-Ionization | |
impedance analysis | |
In situ TEM | |
Instability | |
Integrated features | |
interface state | |
Intermetallic Compounds in Solder Joints | |
IR (infrared) thermography | |
J | |
jamming signal | |
Junction Barrier Schottky diode | |
Junction Temperature | |
Junction temperature swing | |
Junction-Temperature | |
K | |
Kelvin-Probe | |
L | |
La-doped | |
Laser soldering | |
LDMOS | |
Leakage current | |
leakage current; | |
LEDs | |
LiFePO batteries | |
Lifespan | |
lifetime modelling | |
Lifetime Prediction | |
Light Emitting Diodes | |
Lithium-ion batteries | |
Lithium-ion battery capacity loss | |
Long ageing time | |
Long-term reliability | |
Loop aspect ratio | |
Low stress | |
Low-power | |
LP-TEOS | |
LSTM network | |
M | |
Machine learning | |
Mechanical shock | |
Mechanical vibration | |
MEMS | |
MEMS accelerometer reliability | |
MEMS sensors | |
MEMS surface wearing | |
Metamodels | |
Mg Doping | |
MIM | |
Mission Profile | |
Mixed effects models | |
Model predictive control(MPC) | |
Moisture dependant coefficients | |
Moisture diffusion | |
Mold Compound | |
Molded assembly | |
MOSFET | |
multi-level cell | |
Multiple performance parameters degradation | |
N | |
Nanoelectromechanical relay | |
near-interface trap | |
negative bias instability | |
Neuromorphic | |
neutron irradiation | |
NF50 | |
Noise Figure | |
Non-volatile memory | |
Normally-OFF | |
O | |
Off-state degradation | |
ON resistance | |
Online loss evaluation | |
open-set recognition | |
Optical | |
Oxidation | |
Oxidation resistance | |
P | |
p-GaN | |
p-GaN HEMT | |
p-GaN HEMTs | |
package strain | |
Packaging | |
parameters drift | |
Parasitics identification | |
Passivation | |
Passivation Layer Defect | |
PE-TEOS | |
performance analysis | |
performance characteristics | |
performance degradation | |
permanent degradation | |
Photovoltaic inverter | |
Physics-informed machine learning | |
PiN diode | |
plateau voltage | |
PMOS dosimeter | |
Post mold cure(PMC) process | |
Power application | |
Power Cycling | |
Power Cycling Test | |
Power device | |
Power electronic modules | |
power electronics | |
Power inverters | |
Power loss distribution | |
Power module | |
Power Modules in High Temperature Storage Test | |
Power MOSFET | |
power semiconductor | |
power-on speed | |
Power-rail ESD clamp circuit | |
Preconditionning | |
Pulsed Stress | |
pulsed X-rays | |
PV string | |
PWM Inverters | |
Q | |
Quantum gravimetry | |
R | |
Radiation hard | |
Radiation test | |
Rainflow Counting | |
RDSON | |
Real-time prediction | |
Recovery | |
reduced order models | |
Reliability | |
Reliability | |
Reliability Assessment | |
Reliability optimization | |
Residual corection | |
resistive switch | |
RF MEMS | |
RF step-stress | |
Ring Oscillator | |
robust LNA | |
Robustness | |
S | |
S-parameters | |
SAC305 | |
Safety | |
scanning acoustic microscopy | |
scanning electron microscope(SEM) | |
Self Actuation | |
Self heating | |
Self-Heating | |
SEM | |
semiconductor | |
semiconductor device reliability | |
semiconductor device testing | |
semiconductor reliability | |
Sensing | |
Sensor | |
Short Circuit Detection | |
short-circuit | |
Short-Circuit (SC) | |
Si direct bonding | |
SiC | |
SiC | |
SiC MOSFET | |
SiC power module | |
SiC Power Modules | |
SiC-MOSFET Technologies | |
SiGe HBT | |
SiGe HBTs | |
Silicon Carbide | |
Silicon Nitride | |
silver paste; | |
Single Event Effect | |
Single Event Upset | |
Sintering | |
Smart spark plugs | |
SMD Tantalum Capacitors | |
Sn-Bi | |
SOA | |
sodium | |
soft errors | |
Software Defined Vehicle | |
SOI-BiCMOS | |
Solder Crack | |
Solid State Lighting | |
Solutions | |
Space Applications | |
Space Flight Demonstration | |
Speed | |
SRAM-FPGA | |
stability enhancement | |
State of Health estimation | |
STEM | |
Step-stress | |
Step-stress test | |
substrate solder lifetime model | |
surge current | |
System level ESD | |
T | |
Ta2O5 | |
TEM | |
temperature effects | |
Temperature measurement | |
Temperature Read-Out via VSD(T)-Method | |
Temperature variation | |
Temperature-dependent breakdown | |
Test Bench | |
test methods | |
thermal aging | |
Thermal Characterization | |
Thermal Characterization of Solder Defects | |
Thermal Impedance | |
Thermal management | |
Thermal Model | |
Thermal Network | |
thermal reliability | |
Thermal Reliability of Solder Joints | |
thermal resistance | |
Thermal shock test | |
thermal structure function | |
Thermally Stimulated Depolarization Current | |
Thermo-mechanical reliability | |
Thermoelectrical model | |
Thermoelectrical modeling | |
Thermomechanical fatigue | |
thermomechanical stress | |
Three phase inverter | |
three-phase inverter | |
Threshold voltage | |
time-frequency interleaving analysis | |
TiO2 Seed Layer | |
TO-247 modeling | |
TO-247 package | |
Trans-Impedance-Amplifier | |
transient simulation | |
Transistor | |
Transmission line pulse system (TLP) | |
Transmission-Line Pulse | |
TSEP | |
turbo samling | |
TVS | |
U | |
UIS3 | |
unclamped inductive switching | |
V | |
vds peak | |
vertical | |
Vine Copula | |
voltage | |
Vsd(T) method | |
VTH | |
VTH Drift | |
W | |
Warpage | |
Weibull distribution | |
Whole-chip ESD protection | |
Wide frequency bandwidth behavior | |
Wiener Processes | |
Wire bonding | |
wire bonds | |
X | |
X-ray irradiation | |
Y | |
Y2O3 | |
Yttrium Oxide |