ESREF 2018: 29TH EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS
PROGRAM

Days: Monday, October 1st Tuesday, October 2nd Wednesday, October 3rd Thursday, October 4th

Monday, October 1st

View this program: with abstractssession overviewtalk overview

09:00-10:30 Session T1: Tutorial
Location: Musiksalen
09:00
Reliability issues in power SiC and GaN (abstract)
10:50-12:20 Session T2: Tutorial
Location: Laugstuen
10:50
Dielectric reliability in microelectronics: a tight relationship between degradation and technology (abstract)
10:50-12:20 Session T3: Tutorial
Location: Musiksalen
10:50
Reliability of packages for power devices (abstract)
13:10-14:40 Session T4: Tutorial
Location: Laugstuen
13:10
Moisture Modeling in Complex Systems (abstract)
13:10-14:40 Session T5: Tutorial
Location: Musiksalen
13:10
Introduction to the modern Reliability based on physics and statistics (abstract)
15:20-16:40 Session KN: Keynotes
Location: Hall East
15:20
How to successfully overcome inflection points, or long live Moore's law (abstract)
16:00
Vestas’ practice in reliability engineering for power electronics (abstract)
17:00-18:00 Session C-1: Photoemission and Laser Techniques in Defect Analysis
Location: Laugstuen
17:00
Understanding spatial resolution of laser voltage imaging (abstract)
17:20
Exploitation of Laser Voltage techniques for identification and complete characterization of a scan chain transition fail issue using the second harmonic approach (abstract)
17:40
Photon emission as a characterization tool for bipolar parasitics in FinFET technology (abstract)
17:00-18:00 Session E1-1: Capacitor Reliability
Chair:
Location: Hall East
17:00
Lifetime Prediction of Aluminum Electrolytic Capacitors in LED Drivers Considering Parameter shifts (abstract)
17:20
Capacitor loss analysis method for power electronics converters (abstract)
17:40
ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier (abstract)
17:00-18:00 Session F-1: PCB Solder Joints
Location: Musiksalen
17:00
Importance of Electric Resistance Monitoring in Shear Test (abstract)
17:20
Effect of Joule heating on the reliability of solder joints under power cycling conditions (abstract)
17:40
Quantification of lead-free solder fatigue by EBSD analysis (abstract)
17:00-17:40 Session K-1: Photovoltaic Characterization, Monitoring and Protection
Location: Latinerstuen
17:00
Performance increase of tandem amorphous / microcrystalline Si PV devices under variable illumination and temperature conditions (abstract)
17:20
Hotspots and performance evaluation of crystalline-silicon and thin-film photovoltaic modules (abstract)
Tuesday, October 2nd

View this program: with abstractssession overviewtalk overview

08:40-10:20 Session A-1: Quality and Reliability Assessment Techniques and Methods for Devices and Systems
Location: Musiksalen
08:40
An acoustic emission sensor system for thin layer crack detection (abstract)
09:00
Device Characterization of 16/14nm FinFETs for Reliability Assessment with Infrared Emission Spectra (abstract)
09:20
Lock-in Thermography for defect localization and thermal characterization for space application (abstract)
09:40
Physics-of-Failure (PoF) methodology for qualification and lifetime assessment of supercapacitors for industrial applications (abstract)
10:00
Smart SiC MOSFET accelerated lifetime testing (abstract)
08:40-10:20 Session E1-2: Power Semiconductor Reliability
Chair:
Location: Hall East
08:40
Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling (abstract)
09:00
Experimental characterization of critical high-electric field spots in power semiconductors by planar and scanning collimated alpha sources (abstract)
09:20
A power cycling degradation inspector of power semiconductor devices (abstract)
09:40
The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection (abstract)
08:40-10:00 Session IND1: Industrial Session
Location: Latinerstuen
08:40
ZURICH INSTRUMENTS: Digital Signal Processing for FA (abstract)
09:00
MASER: Next generation Accelerated Life test systems for individual sub-40nm node IC’s (abstract)
09:20
PARK SYSTEMS: Automatizing Atomic Force Microscopy – Newest technological solutions in advanced applications for failure analysis (abstract)
09:40
INSIDIX: TDM COMPACT3: Multi-physical platform for advanced warpage and strain measurement measurements (abstract)
08:40-10:20 Session K-2: System-Level Reliability and Condition Monitoring of Photovoltaic and Wind Systems
Location: Laugstuen
08:40
Uncertainty analysis of capacitor reliability prediction due to uneven thermal loading in photovoltaic applications (abstract)
09:00
Impact of meteorological variations on the lifetime of grid-connected PV inverters (abstract)
09:20
System-level Reliability Enhancement of dc/dc Stage of a Single-Phase PV Inverter (abstract)
09:40
Mission profile resolution impacts on the thermal stress and reliability of power devices in PV inverters (abstract)
10:00
Converter monitoring in a wind turbine application (abstract)
10:40-11:20 Session INV1: Invited
Chair:
Location: Hall East
10:40
The end of gate oxide scaling (for real this time) (abstract)
11:20-12:20 Session A-2: Quality and Reliability Assessment Techniques and Methods for Devices and Systems
Location: Musiksalen
11:20
IC security and quality improvement by protection of chip backside against hardware attacks (abstract)
11:40
Reliability concerns from the gray market (abstract)
12:00
A novel crowdsourcing platform for microelectronics counterfeit defect detection (abstract)
11:20-11:40 Session BP1: Best Paper IPFA 2018
Location: Laugstuen
11:20
Self-heating induced variability and reliability in nanosheet-FETs based SRAM (abstract)
11:20-12:20 Session E1-3: System Application Reliability
Chairs:
Location: Hall East
11:20
Simple and Effective Open Switch Fault Diagnosis of Single-Phase PWM Rectifier (abstract)
11:40
Lifetime extension through Tj equalisation by use of intelligent gate driver with multi-chip power module (abstract)
12:00
humidity robustness for high voltage power modules: limiting mechanisms and improvement of lifetime (abstract)
12:20
Investigation of Degradation Mechanisms in Low-Voltage p-Channel Power MOSFETs Under High Temperature Gate Bias Stress (abstract)
11:20-12:20 Session IND2: Industrial Session
Location: Latinerstuen
11:20
SELA: Advanced Solutions for Cross-section of visible and buried defects (abstract)
11:40
MSSCORPS: Inside of 10 nm technology node (abstract)
12:00
MITSUBISHI: Recent SiC module progress and related applications (abstract)
11:40-12:20 Session B1-1: Si-Technologies & Nanoelectronics: Hot Carriers, High-K, Gate Materials
Location: Laugstuen
11:40
Statistical Nature of Hard Breakdown Recovery in High-κ Dielectric Stacks Studied using Ramp Voltage Stress (abstract)
12:00
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory (abstract)
13:40-14:20 Session INV2: Invited
Location: Hall East
13:40
Reliability and reliability investigation of WBG power devices (abstract)
13:40-14:20 Session INV3: Invited
Chair:
Location: Musiksalen
13:40
NBTI and irradiation related degradation mechanisms in power VDMOS transistors (abstract)
14:20-16:00 Session A-3: Quality and Reliability Assessment Techniques and Methods for Devices and Systems
Location: Musiksalen
14:20
Performance-reliability trade-offs in short range RF power amplifier design (abstract)
14:40
Surge Protection Design with Surge-to-Digital Converter for Microelectronic Circuits and Systems (abstract)
15:00
Influence of temperature of Storage, Write and Read operations on Multiple Level Cells NAND Flash memories (abstract)
15:20
A Lightweight Write-Assist Scheme for Reduced RRAM Variability and Power (abstract)
15:40
Experimental studies of: laminate composition, drill bit wear out, and chloride ion concentration as factors affecting CAF formation rate (abstract)
14:20-15:20 Session B1-2: Si-Technologies & Nanoelectronics
Location: Laugstuen
14:20
Towards Understanding Recovery of Hot-Carrier Induced Degradation (abstract)
14:40
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction (abstract)
15:00
Variation-resilient quantifiable plasma process induced damage monitoring (abstract)
14:20-16:00 Session E2-1: SiC and GaN Device Reliability (1)
Location: Hall East
14:20
VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (abstract)
14:40
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs (abstract)
15:00
Degradation of GaN-on-GaN vertical diodes submitted to high current stress (abstract)
15:20
Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules (abstract)
15:40
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs (abstract)
14:20-15:00 Session IND3: Industrial Session
Location: Latinerstuen
14:20
LATTICEGEAR: Scribing and cleaving solutions in Nanofab and Research – technologies, workflows and uses cases (abstract)
14:40
ULTRATEC: ‘In Situ’ Preparation System (abstract)
16:20-17:00 Session B3: EOS and Memory Upset
Location: Laugstuen
16:20
Voltage oscillations during surge pulses induced by self-extinguishing non-destructive second breakdown in pn-junction diodes (abstract)
16:40
An Efficient EDAC Approach for Handling Multiple Bit Upsets in Memory Array (abstract)
16:20-17:40 Session E2-2: GaN/SiC Trapping and Failure
Location: Hall East
16:20
Ensure an original and safe “Fail-to-Open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation (abstract)
16:40
Operating-waveform analysis based reliability evaluation of power MOSFETs used for a leg short-circuit initial charge method (abstract)
17:00
Bias temperature instability and condition monitoring in SiC power MOSFETs (abstract)
17:20
On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs (abstract)
16:20-17:40 Session H: Photonics Reliability
Location: Musiksalen
16:20
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits (abstract)
16:40
Current induced degradation study on state of the art DUV LEDs (abstract)
17:00
Further improvements of an extended Hakki-Paoli method (abstract)
17:20
Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes (abstract)
17:40-19:40 Session Poster - A: Quality and Reliability Assessment Techniques and Methods for Devices and Systems
Location: Hall West
17:40
Gaussian Process Regression Approach for Robust Design and Yield Enhancement of Self-Assembled Nanostructures (abstract)
17:40
Application of Multi-Output Gaussian Process Regression for Remaining Useful Life Prediction of Light Emitting Diodes (abstract)
17:40
A body built-in cell for detecting transient faults and dynamically biasing subcircuits of integrated systems (abstract)
17:40
Evaluation of Variability using Schmitt Trigger on Full Adders Layout (abstract)
17:40
Impact of Different Transistor Arrangements on Gate Variability (abstract)
17:40
Investigation of artificial neural network algorithm based IGBT online condition monitoring (abstract)
17:40
In-situ transistor reliability measurements through nanoprobing (abstract)
17:40
Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields (abstract)
17:40
Design and Implementation of Reliable Flash ADC for Microwave Applications (abstract)
17:40
Manufacturing process-based storage degradation modelling and reliability assessment (abstract)
17:40
Assessing Body Built-In Current Sensors for Detection of Multiple Transient Faults (abstract)
17:40
Corrosion reliability of lead-free solder systems used in electronics (abstract)
17:40-19:40 Session Poster - B1: Si-Technologies & Nanoelectronics: Hot Carriers, High-K, Gate Materials
Location: Hall West
17:40
Effect of DC/AC stress on the reliability of cell capacitor in DRAM (abstract)
17:40
Method to extract parameters of power law for nano-scale SiON pMOSFETs under Negative Bias Temperature Instability (abstract)
17:40
A New Multitime Programmable Non-volatile Memory Cell Using High Voltage NMOS (abstract)
17:40
Analysis of 6T SRAM cell in sub-45nm CMOS and FinFET technologies (abstract)
17:40
Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress (abstract)
17:40
Life Prediction Methodology of System-in-Package Based on Physics of Failure (abstract)
17:40
Effect of OFF-State stress on Reliability of nMOSFET in SWD circuits of DRAM (abstract)
17:40-19:40 Session Poster - B3: Si-Technologies & Nanoelectronics: ESD, EMI and Latch-up
Location: Hall West
17:40
An easy-implemented confidence filter for signal processing in the complex electromagnetic environment (abstract)
17:40
Unified view on energy and electrical failure of the short-circuit operation of IGBTs (abstract)
17:40
Investigations on immunity of interfaces between intelligent media processor and DDR3 SDRAM memory (abstract)
17:40
Conducted EMI Evolution of power SiC MOSFET in a Back Converter after Short-Circuit Aging Tests (abstract)
17:40-19:40 Session Poster - C: Progress in Failure Analysis: Defect Detection and Analysis
Location: Hall West
17:40
Failure mechanism of Ag nanowire-coated conductive transparent electrode for wearable devices under folding and torsional fatigue condition (abstract)
17:40
Automated Detection of Counterfeit ICs using Machine Learning (abstract)
17:40
A Defect-Oriented Test Approach Using On-Chip Current Sensors for Resistive Defects in FinFET SRAMs (abstract)
17:40
A Prognostic Methodology for Power MOSFETs Under Thermal Stress Using Echo State Network and Particle Filter (abstract)
17:40
Simulation-based evaluation of probing attacks to arbiter PUFs using a time-resolved emission microscope (abstract)
17:40
Detection of Failure Mechanisms in 24-40nm FinFETs with (Spectral) Photon Emission Techniques using InGaAs Camera (abstract)
17:40
Failure Analysis on 14nm FinFET Devices with ESD CDM Failure (abstract)
17:40
Cross-sectional Nanoprobing Sample Preparation on Sub-micron Device with Fast Laser Grooving Technique (abstract)
17:40
Void detection in solder bumps with deep learning (abstract)
17:40
Fault Location of a Switched Mode Power Supply based on Extended Integer-coded Dictionary Method (abstract)
17:40
Non-destructive imaging of defects in Ag-sinter die attach layers – a comparative study including X-Ray, Scanning Acoustic Microscopy and thermography (abstract)
17:40-19:40 Session Poster - D: Reliability of Microwave and Compound Semiconductors Devices
Location: Hall West
17:40
Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stress (abstract)
17:40
A new electro-optical transmission line measurement method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance (abstract)
17:40
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes (abstract)
17:40-19:40 Session Poster - E1: Power Devices Reliability - Silicon and Passive
Location: Hall West
17:40
Measure of High Frequency Input Impedance to Study the Instability of Power Devices in Short Circuit (abstract)
17:40
Investigation of Acoustic Emission as a Non-invasive Method for Detection of Power Semiconductor Aging (abstract)
17:40
Analysis of indentation measured mechanical properties on Multilayer Ceramic Capacitors (MLCCs) (abstract)
17:40
An Analytical Circuit based Nonlinear Thermal Model for Capacitor Banks (abstract)
17:40
Reliability evaluation of IGCT from accelerated testing, quality monitoring and field return analysis (abstract)
17:40
Comparison of temperature sensitive electrical parameter based methods for junction temperature determination during accelerated ageing of power electronics (abstract)
17:40
Degradation estimation using feature increment stepwise linear regression for PWM Inverter of Electro-Mechanical Actuator (abstract)
17:40
A Multi-Port Thermal Coupling Model for Multi-Chip Power Modules Suitable for Circuit Simulators (abstract)
17:40
Online Condition Monitoring of IGBT Modules Using Voltage Change Rate Identification (abstract)
17:40
Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena (abstract)
17:40
A fully digital feedback control of gate driver for current balancing of parallel connected power devices (abstract)
17:40
Envelop Tracking Based Embedded Current Measurement for Monitoring of IGBT and Power Converter System (abstract)
17:40
Mutual and self-aging effects of power semiconductors on the thermal behaviour of DC-DC boost power converter (abstract)
17:40-19:40 Session Poster - E2: Power Devices Reliability - Wide Bandgap Devices
Location: Hall West
17:40
Avalanche ruggedness of parallel SiC power MOSFETs (abstract)
17:40
Failure Analysis of 650V Enhancement Mode GaN HEMT after Short Circuit Tests (abstract)
17:40
Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices (abstract)
17:40
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules (abstract)
17:40
Effect of short circuit aging on safe operating area of SiC MOSFET (abstract)
17:40
Study of forward AC stress degradation of GaN-on-Si Schottky diodes (abstract)
17:40
Evolution of C-V and I-V characteristics for a commercial 600V GaN GIT power device unde repetitive short-circui tests (abstract)
17:40
Investigating SiC MOSFET body diode’s light emission as Temperature-Sensitive Electrical Parameter (abstract)
17:40
Measurement and Analysis SiC-MOSFET threshold voltage shift (abstract)
17:40
The synergetic effects of high temperature gate bias and total ionization dose on 1.2kV SiC devices (abstract)
17:40
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode (abstract)
17:40-19:40 Session Poster - F: Packaging and Assembly Reliability
Location: Hall West
17:40
Comparison of Experimental, Analytical and Simulation Methods to Estimate Substrate Material Properties for Warpage Reliability Analysis (abstract)
17:40
Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings (abstract)
17:40
An empirical model for thermal interface materials based on experimental characterizations under realistic conditions (abstract)
17:40
GaN transistors efficient cooling by graphene foam (abstract)
17:40
Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure (abstract)
17:40
Water cold plates for high power converters: a software tool for easy optimized design (abstract)
17:40
Reliability investigation of large area solder joints in power electronics modules and its simulative representation (abstract)
17:40
Shear properties of In-Bi alloy joints with Cu substrates during thermal aging (abstract)
17:40
Sequential Combined thermal Cycling and Vibration Test and Simulation of Printed Circuit Board (abstract)
17:40
Low temperature transient liquid phase bonded Cu-Sn-Mo and Cu-Sn-Ag-Mo interconnects – a novel approach for hybrid metal baseplates (abstract)
17:40
Study on power cycling test with different control strategies (abstract)
17:40-19:40 Session Poster - G: MEMS, Sensors and Organic Electronics Reliability
Location: Hall West
17:40
Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors (abstract)
17:40
Analysis of the effects of voltage pulses on P3HT:PCBM polymeric solar cells by means of TLP technique (abstract)
17:40
Effects of stair-case Gate bias stress in IGZO/Al2O3 flexible TFTs (abstract)
17:40-20:00 Session Poster - H: Photonics Reliability
Location: Hall West
17:40
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress (abstract)
17:40
Analysis of Semiconductor Fault using DS (Damped Sinusoidal) HPEM Injection (abstract)
17:40-19:40 Session Poster - I: Extreme Environments and Radiation
Location: Hall West
17:40
Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices (abstract)
17:40
Radiation robustness of normally-off GaN/HEMT power transistors (COTS) (abstract)
17:40
The total ionizing dose response of Leading-edge FDSOI NMOSFET (abstract)
17:40
Charge and energy deposition in thick silicon depletion layers by environmental ionizing radiation and terrestrial cosmic rays (abstract)
17:40
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment (abstract)
17:40
Process variation dependence of total ionizing dose effects in bulk nFinFETs (abstract)
17:40
Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers (abstract)
17:40
TCAD simulation of radiation-induced leakage current in 1T1C SDRAM (abstract)
17:40
Single-Event Transient Effects on Dynamic Comparator in 28nm FDSOI CMOS Technology (abstract)
17:40
Non-destructive estimation method on cosmic ray ruggedness of power semiconductors using repetitive monitoring technique (abstract)
17:40-19:40 Session Poster - K: Renewable Energies Reliability
Location: Hall West
17:40
Photovoltaic plant maintainability optimization and degradation detection: modelling and characterization (abstract)
17:40
The effect of solar cell internal resistance change on the bus voltage ripple in spacecraft power system (abstract)
17:40
Lifetime Evaluation of a Multifunctional PV Single-Phase Inverter during Harmonic Current Compensation (abstract)
17:40
Lifetime estimation of modular cascaded H-bridge MLPVI for grid-connected PV systems considering mission profile (abstract)
17:40
Life consumption of a MMC-STATCOM Supporting Wind Power Plants: Impact of the Modulation Strategies (abstract)
17:40
Direct power control of three-level NPC grid-connected system combined with fault-tolerant technology (abstract)
17:40-19:40 Session Poster - L: Modeling for Reliability
Location: Hall West
17:40
Reliability Assessment of Power Conditioner Considering Maintenance in a PEM Fuel Cell System (abstract)
17:40
A Novel Method of Reliability-Centered Process Optimization for Additive Manufacturing (abstract)
17:40
Influence of the pulse length and temperature swing on the relative lifetime estimation for sintered/soldered chip-on-substrate samples via FE-simulation of power cycles (abstract)
17:40
Effect of solder material thickness on Power MOSFET reliability by Electro-Thermo-Mechanical Simulations (abstract)
17:40
Lifetime prediction of a modified Y-source inverter in photo-voltaic application (abstract)
17:40
Creep measurement and choice of creep laws for BGA assemblies' reliability simulation (abstract)
17:40
Reliability model of bond wire fatigue for IGBT in MMC with system redundancy consideration (abstract)
17:40
Transient junction temperature estimation of IGBT using improved thermal model (abstract)
17:40-19:40 Session Poster - SS1: Reliability in Traction Applications
Location: Hall West
17:40
Reliability design of battery management system for power battery (abstract)
17:40
RCD snubber design based on reliability consideration: A case study for thermal balancing in power electronic converters (abstract)
17:40
An Extensible Stability Analysis Method in Time Domain for Cascaded DC-DC Converters in Electrical Vehicles (abstract)
17:40
Reliability of rail transit traction drive system—a review (abstract)
17:40
A Novel Fault-tolerant Control for Battery-Energy-Storage System Based on Cascade Multilevel Converter with Battery/BMS Failure (abstract)
17:40
Implementation of Direct Chip Junction Temperature Measurement in High Power IGBT Module in Operation - Railway Traction Converter (abstract)
17:40
Reliable N Sleep Shuffled Phase Damping Design for Ground Bouncing Noise Mitigation (abstract)
17:40
On-line Fault Diagnosis Model for Locomotive Traction Inverter Based on Wavelet transform and Support Vector Machine (abstract)
17:40
A PCH Strong Tracking Control Strategy for Power Coordinated Allocation of Li-SC HESS (abstract)
17:40
Influence Factors Analysis of Rail Potential in Urban Rail Transit (abstract)
17:40
A Reliable Speed Controller for Suppressing Low Frequency Concussion of Electric Vehicle (abstract)
Wednesday, October 3rd

View this program: with abstractssession overviewtalk overview

08:40-10:00 Session E2-3: SiC and GaN device reliability (2)
Location: Hall East
08:40
Failure Modes and Mechanism Analysis of SiC MOSFET under Short-Circuit Conditions (abstract)
09:00
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors (abstract)
09:20
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition (abstract)
09:40
Degradation of vertical GaN-on-GaN fin transistors: step-stress and constant voltage experiments (abstract)
08:40-10:00 Session L-1: Modeling Challenges for Devices Reliability
Location: Musiksalen
08:40
TCAD investigation on hot-electron injection in new-generation technologies (abstract)
09:00
TCAD Study of DLC Coatings for Large-Area High-Power Diodes (abstract)
09:20
Investigation of layout effects in diode-triggered SCRs under very-fast TLP stress through full-size, calibrated 3D TCAD simulation (abstract)
09:40
NBTI and HCI models for circuit level aging simulations in different EDA environments (abstract)
08:40-10:00 Session SS1-1: State of Health of Li-Ion Batteries
Location: Laugstuen
08:40
Remaining useful life prediction for lithium-ion batteries based on an integrated health indicator (abstract)
09:00
Lithium-ion battery state of health estimation with short-term current pulse test and support vector machine (abstract)
09:20
A prediction method for discharge voltage of lithium-ion batteries under unknown dynamic loads (abstract)
09:40
Efficient state of health estimation of Li-ion battery under several ageing types for aeronautic applications (abstract)
10:20-11:00 Session INV4: Invited
Location: Hall East
10:20
Analytics for physics of failure in automotive applications (abstract)
10:20-11:00 Session INV5: Invited
Location: Musiksalen
10:20
Cross-Layer Approaches for Resilient VLSI System Design (abstract)
11:00-12:20 Session F-2: Device Internal Solder Joints
Location: Hall East
11:00
Large area die-attachment by silver stress migration bonding for power device applications (abstract)
11:20
Frequency domain scanning acoustic microscopy for power electronics: physics-based feature identification and selectivity (abstract)
11:40
Influence of thermal exposure upon mechanical/electrical properties and microstructure of sintered micro-porous silver (abstract)
12:00
Corrosion behaviour of sintered silver under maritime environmental conditions (abstract)
11:00-12:20 Session L-2: Numerical Modeling of Back-End Processes and Assembly
Location: Musiksalen
11:00
Deriving Lifetime Predictions for Wire Bonds at High Temperatures (abstract)
11:20
Modeling the rate-dependent inelastic deformation behavior of porous polycrystalline silver films (abstract)
11:40
Thermal resistance modelling and design optimization of PCB vias (abstract)
12:00
Highlighting two integration technologies based on vias: Through Silicon Vias and embedded components into PCB. Strengths and weaknesses for manufacturing and reliability. (abstract)
11:00-12:20 Session SS1-2: Automotive Systems Reliability
Location: Laugstuen
11:00
Fundamental Frequency Region-based Thermal Control of Power Electronics Modules in High Power Motor Drive (abstract)
11:20
Calendar and cycling ageing combination of batteries in electric vehicles (abstract)
11:40
Method of Junction Temperature Estimation and Over Temperature Protection Used for Electric Vehicle’s IGBT Power Modules (abstract)
12:00
Comparison of Lithium-ion Battery Performance at Beginning-of-Life and End-of-Life (abstract)
13:20-14:00 Session INV6: Invited
Location: Hall East
13:20
Interplay of humidity and electrical functionality imposing reliability problems in electronics (abstract)
14:00-15:40 Session F-3: Material & Construction
Location: Hall East
14:00
Cyclic robustness of heavy wire bonds: Al, AlMg, Cu and CucorAl (abstract)
14:20
Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam (abstract)
14:40
Mechanism of Wire Bond Shear Testing (abstract)
15:00
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture (abstract)
15:20
Characterization of cyclic delamination behavior of thin film multilayers (abstract)
14:00-15:20 Session L-3: Simulation of System and Module Reliability
Location: Musiksalen
14:00
Two-thermal-states model predictive control for IGBT in three-phase inverter (abstract)
14:20
Simulation and Modelling of Long Term Reliability of Digital Circuits implemented in FPGA (abstract)
14:40
Thermal Modeling of Wire-bonded Power Modules Considering Non-Uniform Temperature and Electric Current Interactions (abstract)
15:00
A new processing method for accelerated degradation data based on quantile regression and pseudo-failure lifetime (abstract)
14:00-15:40 Session SS1-3: Reliability Assessment and Fault Tolerant Control
Location: Laugstuen
14:00
Reliability Assessment for Traction Power Supply System Based on Quantification of Margins and Uncertainties (abstract)
14:20
A Fault-Tolerant Control Strategy for Switched Reluctance Motor Drive for Electric Vehicles Under Short-Fault Condition (abstract)
14:40
Thermal stress reduction of quasi-Z source inverter drive by model predictive control (abstract)
15:00
Detection and Identification of Power Switch Failures for Fault-Tolerant Operation of Flying Capacitor Buck-Boost Converters (abstract)
15:20
A novel current-limiting circuit based on resistive-type SFCL for fault in DC power system (abstract)
15:20-15:40 Session BP3: Best Paper ISTFA 2017
Location: Musiksalen
15:20
Steps toward automated deprocessing of integrated circuits (abstract)
Thursday, October 4th

View this program: with abstractssession overviewtalk overview

08:40-10:20 Session C-2: Defect Detection Using Microscopy and Probing Techniques
Location: Hall East
08:40
High resolution observation of defects at SiO2/4H-SiC interfaces by time-resolved scanning nonlinear dielectric microscopy (abstract)
09:00
Use of Golden Samples for the Assessment of the Quality and Reproducibility of Scanning Acoustic Microscopy Images of Electronics Samples (abstract)
09:20
New defect detection approach using near electromagnetic field probing for high density PCBAs (abstract)
09:40
Complex Automotive ICs defect localization driven by Quiescent Power Supply Current: three cases study (abstract)
10:00
Metallization Defect Detection in 3D Integrated Components using Scanning Acoustic Microscopy and Acoustic Simulations (abstract)
08:40-10:20 Session G: MEMS, Sensors and Organic Electronics reliability
Location: Laugstuen
08:40
Reliability assessment and failure mode analysis of MEMS accelerometers for space applications (abstract)
09:00
Reliability Testing of Integrated Low-Temperature PVD PZT Films (abstract)
09:20
Stress Analysis of CMOS-MEMS Microphone under Shock Loading by Taguchi Method (abstract)
09:40
Design and development of MEMS-based structures for in-situ characterization of thermo-mechanical behaviour of thin metal films (abstract)
10:00
Charging mechanisms in Y2O3 dielectric films for MEMS capacitive switches (abstract)
08:40-10:20 Session I-1: Radiation Effects in Advanced Devices
Location: Musiksalen
08:40
Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions (abstract)
09:00
Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation (abstract)
09:20
Total Ionizing Dose and Single Event Effects of 1Mb HfO2-based Resistive-Random-Access Memory (abstract)
09:40
Effects of HPEM Stress on GaAs Low-Noise Amplifier from Circuit to Component Scale (abstract)
10:00
A single event upset tolerant latch design (abstract)
10:40-12:00 Session C-3: Manufacturing Weaknesses Leading to Failure
Location: Hall East
10:40
Influence of Sample Preparation on Intrinsic Stresses inside a Model Chip - First Results of Partial Decapsulation (abstract)
11:00
Failure Mechanism Analysis of Fuses Subjected to Manufacturing and Operational Thermal stresses (abstract)
11:20
Solving 28nm I/O Circuit Reliability Issue due to Design Weakness (abstract)
11:40
Failure Signature Analysis of Power-Opens in DDR3 SDRAMs (abstract)
10:40-12:20 Session D: Reliability and Qualification of Microwave GaN Technologies
Location: Laugstuen
10:40
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors (abstract)
11:00
Comparison of Reliability of 100 nm AlGaN/GaN HEMTs with T-Gate and SAG-Gate Technology (abstract)
11:20
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs (abstract)
11:40
Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures (abstract)
12:00
Qualification of GaN microwave transistors for the European Space Agency Biomass mission (abstract)
10:40-12:20 Session I-2: Analysis and Mitigation of Radiation Effects in Complex Chips
Location: Musiksalen
10:40
Evaluating the reliability of a GPU pipeline to SEU and the impacts of software-based and hardware-based fault tolerance techniques (abstract)
11:00
Design of Approximate-TMR using Approximate Library and Heuristic Approaches (abstract)
11:20
PTM-based hybrid error-detection architecture for ARM microprocessors (abstract)
11:40
On the Analysis of Radiation-induced Single Event Transients on SRAM-based FPGAs (abstract)
12:00
SHARC: Efficient Metric for Selective Protection of Software against Soft Errors (abstract)