TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
1 | |
100 nm GaN HEMT | |
14nm FinFET | |
2 | |
28nm | |
28nm FDSOI CMOS technology | |
3 | |
3D | |
3D image processing | |
3D Integration | |
4 | |
4H-SiC MOSFET | |
6 | |
600V GaN GIT | |
A | |
AA | |
Accelerated ageing | |
accelerated aging | |
accelerated degradation data | |
accelerated mechanical fatigue test (BAMFIT) | |
Accelerated Testing | |
Accessibility | |
acoustic | |
acoustic emission | |
acoustic microscopy | |
Acoustic Simulation | |
acoustic wave | |
Active Thermal Control | |
Adaptive body biasing | |
additive manufacturing | |
AFM | |
Ag nanowire transparent electrode | |
Ag paste | |
Ag stress migration bonding | |
Ageing | |
Ageing modes | |
Aging | |
aging indicator | |
AlGaN/GaN | |
Alpha Source Scanning | |
Amorphous Si | |
amorphous-Si (a-Si) thin-film (TF) | |
Analytics | |
Annealing | |
Approximate Circuits | |
Approximate Library | |
arbiter PUF | |
ARM | |
Arrhenius plot | |
artificial neural network | |
ATMR | |
atomic force microscopy | |
authentication | |
Automated | |
automotive | |
automotive applications | |
Automotive Environment | |
avalanche ruggedness | |
B | |
B10 lifetime | |
back bias voltage | |
Back gate bias | |
backside emmi | |
backside protection | |
barrier height | |
Battery | |
Battery energy storage system | |
BB | |
BDC | |
Bias Temperature Instability | |
Bias temperature stress | |
Bias voltage | |
BiCMOS | |
Biomass mission | |
bipolar parasitics | |
BMS | |
body bias effect | |
body built-in current sensors | |
Bond Wire | |
bond wire degradation measurement | |
Bondwire fatigue | |
boundary determination | |
Breackdown Voltage of IGZO/AL2O3 TFTs | |
Breakdown voltage | |
BTI | |
buck converter | |
Buck-Boost Converter | |
Built-in current sensors | |
bulk FinFET | |
C | |
C-V | |
CAF | |
Calendar ageing | |
Capacitor | |
Capacitor bank | |
Capacitor loss analysis | |
Capacity | |
carbon | |
cascade multilevel converter | |
Cascaded system | |
CC | |
Cell capacitor | |
ceramic capacitor | |
Chain transition fault | |
characteristic of ageing precursor | |
characterization | |
Charge pumping | |
Charge Sharing | |
Charge Transport Mechanisms | |
Chip backside | |
Circut level simulation of transistor aging | |
CMOS | |
CMOS-MEMS microphone | |
Cold plate | |
Combined Test | |
Common and differential modes | |
Complex Systems | |
composition ratio | |
condition monitoring | |
conducted EMI | |
Conductive Anodic Filament | |
confidence | |
Contactless testing | |
Continuum Mechanics | |
Control strategy | |
Converters | |
Cooling | |
Copper wire | |
Correlative Microscopy | |
corrosion | |
Cosmic ray ruggedness | |
Counterfeit detection | |
counterfeit electronic | |
Coupling factor | |
crack | |
Creep | |
Creep fatigue | |
creep law | |
Critical Application | |
Cross-sectional nanoprobing | |
Cross-sectional SEM | |
Crowd Sourcing | |
crystalline silicon (c-Si) | |
current balancing | |
current destruction | |
current filaments | |
current overload | |
Current pulse test | |
current sensing | |
current surge | |
CVS | |
Cycle ageing | |
cyclic four-point bending | |
D | |
Damped Sinusoidal pulse | |
data retention | |
DBC | |
DC circuit breaker | |
DC-DC converter | |
dc-link capacitors | |
DDR3 SDRAM | |
deep learning | |
Defect clustering model | |
Defect detection | |
Defect localization | |
degradation | |
Degradation indicators | |
Degradation of battery | |
Deprocessing | |
Design | |
Design for reliability | |
Design of experiment | |
Design optimization | |
device parameters | |
DFT | |
di/dt | |
Diamond-like carbon (DLC) | |
DICE | |
Die defect detection | |
dielectric | |
Dielectric Charging | |
Digital circuits | |
Digital feedback control(DFC) | |
Digital image correlation | |
Diode | |
Diodes | |
direct power control | |
Direct Power Injection | |
discharge voltage | |
dislocation | |
displacement damage | |
dissipated energy | |
double pulsed testing | |
drain and source contact resistances | |
DRAM | |
Drill Bit Wear Out | |
drive cycle | |
Drop test | |
DTSCR | |
Dummy cell | |
DUV LED | |
Dychotomy | |
Dynamic Comparator | |
Dynamic current | |
dynamic on-resistance | |
Dynamic Response | |
E | |
EBSD | |
EBSP | |
EELS | |
Efficiency degradation | |
Efficiency improvement | |
Electric vehicle | |
electric vehicle motor driver | |
Electrical characterization | |
Electrical Injection | |
electrical overstress | |
Electrical overstress (EOS) | |
electrical resistivity | |
Electrical stress | |
Electrical Vehicles | |
Electro-mechanical Actuator | |
Electro-Optical TLM | |
Electro-thermal Interactions | |
electrochemical measurements | |
electroluminescence | |
electrolytic capacitor | |
electromagnetic interference | |
electronic reliability | |
Electronics | |
Electrostatic Discharge | |
Electrostatic Discharge (ESD) | |
elevated temperature | |
Embedded components | |
embedded processors | |
EMC | |
EMP(Electromagnetics Pulse) | |
Empirical model | |
encryption | |
energy destruction | |
Energy dissipation | |
EOS | |
Epoxy resin | |
Error Detection and Correction (EDAC) | |
ESA | |
Experimental mechanics | |
F | |
FA | |
Fail-to-open | |
failure | |
Failure analysis | |
Failure analysis (FA) | |
Failure Analysis on FINFET | |
Failure mechanism | |
Failure mode analysis | |
failure prediction | |
failure rate estimation method | |
fast hole trapping | |
fast measurement | |
fatigue | |
Fatigue failure | |
Fault current | |
Fault diagnosis | |
Fault Isolation | |
fault location | |
Fault tolerance | |
fault tolerance technology | |
Fault-tolerant | |
fault-Tolerant control | |
FDSOI | |
FE-Simulation | |
FEM | |
FEM Reliability Simulation | |
Field Programmable Gate Array | |
field reliability | |
filter | |
FinFET | |
FinFET technology | |
FinFET-based SRAM | |
FinFETs | |
Finite Element Analysis | |
Finite element method | |
Finite Element Method (FEM) | |
finite element modeling | |
Flash reliability | |
Flexible electric devices | |
Flexible Thin Film Transistors | |
Floating gate (FG) | |
Flying Capacitor | |
Focused-Ion Beam | |
Foldable electronic device | |
Folding fatigue | |
Fowler-Nordheim | |
FPGA | |
full adder | |
Functionality | |
Fundamental Frequency | |
Fuses | |
fuzzy control | |
fWLR | |
G | |
GaAs | |
gallium nitride | |
GaN | |
GaN HEMT | |
GaN HEMTs | |
GaN power HEMT | |
GaN transistor | |
GaN-buffer design | |
GaN-on-si | |
Gate current | |
Gate oxide reliability | |
gate reliability | |
Gate shielding effect | |
gate unit reliability | |
Gaussian process regression | |
Genetic Algorithm | |
Golden Sample | |
Graphene foam | |
Graphics Processing Units | |
Grid-connected PV systems | |
ground bouncing noise | |
H | |
H3TRB | |
Hard breakdown recovery | |
Hardware attacks | |
Hardware-based Approach | |
Harmonic Compensation | |
harsh environment | |
HCI | |
Health Indicators | |
health prognostics | |
heating | |
Heatsink | |
Heavy ion | |
Heavy ion irradiation | |
Heavy Ions | |
HEMT | |
HESS; | |
High density PCBA | |
High electron mobility transistor | |
High K | |
High power IGBT modules | |
High Temperature Gate Bias (HTGB) | |
High temperature reverse bias | |
High temperature storage | |
high-electron-mobility transistor | |
High-K | |
HKMG | |
Hot carrier | |
Hot carrier degradation | |
hot carriers | |
Hot-carrier injection | |
hotspots | |
HPEM | |
HPEM(High Power Electromagnetics) | |
HTGB | |
HTRB | |
Humidity | |
hybrid baseplates | |
hydrogen diffusion | |
I | |
I-V | |
IC Aging Modeling | |
IC design retrofit | |
IC design weak point | |
IC quality | |
IC security | |
IDDQ | |
IEMI | |
IGBT | |
IGBT module | |
IGBT modules | |
IGBT protection | |
IGBT reliability | |
IGCT | |
imaging | |
IMC | |
Immunity | |
impact of bonding parameters | |
In-Bi solder | |
InAlGaN/GaN | |
indenter | |
Inflection points | |
influence factor | |
InGaAs | |
InGaN | |
InGaZnO thin film transistor | |
Input/Output circuit (I/O) | |
inspection | |
Instabilities | |
Instability | |
Insulated gate bipolar transistor | |
Insulated Gate Bipolar Transistors | |
integer-coded dictionary | |
Integrated Circuits | |
integrated health indicator | |
interface state | |
intermetallic compound | |
Internal Resistance | |
Interval Analysis | |
intrinsic Stress measurement | |
Inverters | |
IR Thermography | |
irradiation | |
ITIQ comparator | |
J | |
junction temperature | |
Junction temperature measurement | |
L | |
lach design | |
large area die-attachment | |
Large Area Solder Joint | |
Laser deprocess technique | |
laser diodes | |
Laser lock-in thermography | |
Laser Voltage Imaging | |
Laser Voltage techniques | |
laser-diode | |
lead-free | |
leakage current | |
LED | |
LED driver | |
Life Consumption | |
Life Prediction | |
life time | |
lifetime | |
lifetime estimation | |
Lifetime evaluation | |
Lifetime Modeling | |
Lifetime prediction | |
lift-off failure | |
Light Emitting Diode | |
Lithium ion battery | |
Lithium-Ion | |
lithium-ion battery | |
LNA | |
Location of Critical High Carrier Multiplication Spots | |
Lock-in thermography | |
Logistic regression | |
Long term dc bias stability | |
loss measurement | |
low dose rate | |
low frequency concussion | |
Low-melting temperature | |
low-temperature PVD PZT | |
Lumen degradation | |
M | |
Machine Learning | |
Maintainability | |
Maintenance | |
manufacturing process | |
maritime environment | |
MDSWC | |
measurement | |
measurement method | |
measurement systems | |
Mechanical Characterization | |
mechanical damage | |
mechanical properties characterization | |
Memory Reliability | |
MEMS | |
metal foam | |
Metal Gate | |
Metallization | |
Meteorological Conditions | |
micro galvanic corrosion | |
micro-grid; | |
Microelectronics | |
microprocessor | |
Microstructures | |
MIM Capacitors | |
Mission Profile | |
Mission profiles | |
MLC | |
MLCC | |
model predictive control | |
Modeling | |
Modeling for reliability | |
Modelling | |
Modular cascaded H-bridge MLPVI | |
Modular Multilevel Converter | |
Modulation scheme | |
Modulation Strategies | |
Moisture | |
Monitoring | |
Monte Carlo | |
Monte-Carlo Simulation | |
Moore law | |
MOS interface | |
MOS interface states | |
MOS transistor | |
MOSFET | |
Motor Drive Reliability | |
MPG encoder | |
Multi-chip power modules | |
multi-physical fields | |
Multi-physics Modelling and Simulation | |
Multi-port thermal model | |
Multichip power module | |
Multifunctional Inverters | |
Multiple transient faults | |
Multiple-Bit Upset (MBU) | |
multitime programmable (MTP) | |
mutilayer ceramic capacitor | |
N | |
N sleep shuffled phase damping | |
NAND Flash memory | |
nano-indentation | |
nanoprobing | |
NBTI | |
near EM field | |
negative bias temperature instability | |
Negative Bias Temperature Stress (NBTS) | |
NIEL | |
NIR illumination | |
nMOSFET | |
Noise | |
Noisy Environment | |
Non-Destructive Analysis | |
Non-destructive testing | |
non-uniform operation | |
Non-uniform Temperature | |
non-volatile memory (NVM) | |
Numerical modeling | |
O | |
object detection | |
Observer | |
obsolescence | |
off shore | |
OFF-State stress | |
online condition monitoring | |
online estimation | |
online monitoring | |
Online platform | |
open defect | |
Open-circuit fault | |
Operating-Waveform Analysis | |
operational amplifiers | |
optical analysis | |
optical gain | |
Optical layer | |
Organic electronics | |
Outdoor stress tests | |
over temperature protection | |
Oxide breakdown | |
P | |
p-GaN gate | |
p-n junctions | |
P3HT:PCBM polymeric solar cells | |
Package reliability | |
Packages | |
Parallel | |
Parallel connected IGBT | |
Parallel sleep transistor | |
parameter shifts | |
parasitic bipolar transistor | |
Parasitic capacitance | |
parasitic devices | |
Parity-per-Byte | |
partial decapping | |
partial shadings | |
particle filter | |
passivation | |
Passive Temperature Cycling | |
passive thermal cycling | |
PBTI | |
PCB | |
PCB embedding | |
PCB sensor | |
PCH strong tracking control | |
Peak minimization | |
Peltier effect | |
PEM | |
PEM Fuel Cell System | |
Percolation model | |
Performace | |
performance | |
performance index | |
Permanent magnet synchronous motor | |
pHEMT | |
Photo-voltaic | |
photon emission | |
photon emission microscopy | |
Photovoltaic | |
Photovoltaic modules | |
Photovoltaic Systems | |
Physics | |
physics of failure | |
PID | |
piezo resistive | |
Planar and Collimated Alpha Source | |
Plasma charging | |
Poole-Frenkel-like transport | |
positive bias temperature instability | |
Positive Gate bias stress | |
power | |
Power battery | |
Power Conditioner | |
power converter | |
power coordinated allocation; | |
Power Cycle | |
Power Cycling | |
power cycling test | |
power device | |
Power Device Reliability and Robustness | |
Power devices | |
power efficiency | |
Power electronics | |
Power Electronics Reliability | |
power integrity(PI) | |
Power inverter | |
Power module | |
power module packaging reliability | |
Power Modules | |
Power MOSFET | |
Power MOSFETs | |
power pin | |
Power Semiconductor Devices | |
Power Semiconductors | |
Power transistor | |
Power VDMOSFETs | |
Power-amplifiers | |
prediction | |
pressed contact | |
Printed circuit board | |
Printed Circuit Board (PCB) | |
probing | |
process optimization | |
process variability | |
Process variation | |
prognostic | |
Prognostics and health management | |
Proton | |
pseudo-failure lifetime | |
PTM | |
Pulsed electro-acoustic analysis | |
PV inverter | |
PV systems | |
PWM Inverter | |
PZT Thin Films | |
Q | |
qualification | |
quality | |
quantification of margins and uncertainties | |
quantile regression | |
quasi-Z-source inverter | |
Quatro | |
quiescent current | |
R | |
R-Flash ADC | |
Radiation | |
Radiation effects | |
radiation hardened by design | |
Radiation hardness | |
Radiation Related Degradation | |
Radiation-Hardening-by-Design (RHBD) techniques | |
rail potential | |
rail transit | |
Railway traction | |
Raman spectroscopy | |
Ramp voltage stress | |
random failure | |
RBSOA | |
Real temperature measurement | |
Real-time monitoring | |
Recovery | |
redundancy | |
Reliabil | |
Reliability | |
Reliability Analysis | |
Reliability assessment | |
reliability evaluation | |
reliability indicators | |
reliability investigation | |
reliability model | |
reliability of capacitor | |
reliability of SiC MOSFETs | |
Reliability prediction | |
Reliabilty Simulation | |
Reliable Circuits | |
remaining useful life | |
renewable energy | |
Repassivation | |
Repetitive short-circuit test | |
Repetitive tests | |
Resilient | |
Resistive defects | |
Resistive RAM | |
Resistive switching | |
resistive-random-access memory | |
Resolution | |
resonance | |
RF | |
RF-MEMS | |
Robust design | |
Robustness | |
Rogowski coil | |
S | |
Safe failure mode | |
safety | |
Salt Spray Test | |
SAM | |
Scaling principle | |
Scanning Acoustic Microscopy | |
scanning probe microscopy | |
Schmitt Trigger | |
SCSOA | |
SDRAM | |
SEB | |
second breakdown | |
security | |
SEE | |
Self assembly | |
SEM | |
semiconductor | |
Sensitivity Analysis | |
sensor | |
separated test method | |
Shaker | |
Shear test | |
shear tests | |
Shock loading | |
Shoot-through | |
Short Circuit | |
short circuit aging | |
short pulse power | |
Short-circuit | |
Short-circuit capability | |
short-fault | |
Si IGBT | |
SiC | |
SiC MOSFET | |
SiC MOSFETs | |
SiC power module | |
SiC Power MOSFET | |
signature statistical analysis | |
SIHFT | |
Silicon Carbide | |
Silicon carbide (SiC) | |
Silicon Carbide MOSFET | |
Silicon nitride assisted gate | |
silicon photonics | |
silver sinter paste | |
Silver-sintering die attach | |
Simulation | |
Single Event Burnout | |
Single event cell degradation | |
single event effects | |
Single Event Transient | |
Single Event Transients | |
single event upset | |
single poly CMOS | |
Single-phase rectifier | |
sinter joining | |
sinter silver | |
Sintered Silver | |
SiON dielectrics | |
sliding mode speed controller | |
slow measurement | |
Snubber | |
SOA | |
soft-errors | |
solar array | |
solar photovoltaic | |
solder alloy | |
solder bumps | |
Solder die fatigue failure | |
solder fatigue | |
Solder joint | |
solder joint reliability | |
Solder joints | |
solder layer degradation measurement | |
soldering induced residual stress | |
Space Qualification | |
Spatial distribution of degradation | |
Spatial resolution | |
Spectra | |
Spectral analysis | |
spectral photon emission | |
spectrum | |
sputtering target | |
SRAM | |
SRAM-based FPGA | |
stability | |
Staggered phase damping | |
State of health | |
statistical analysis | |
Statistics | |
Step-stress testing | |
stochastic finite element analysis | |
storage degradation modelling | |
storage reliability of batch products | |
Stress analysis | |
stress-counting | |
Substrate reliability | |
subthreshold | |
subthreshold hystereisi | |
supercapacitors | |
Superconducting fault current limiter | |
Support Vector Machine | |
surge protection | |
Surge pulse | |
Surge Test | |
surge-to-digital converter | |
Survival analysis | |
SVM | |
Switched mode power supply | |
Switching system | |
synergetic effects | |
system voltage ripple | |
System-in-Package | |
system-level reliability | |
T | |
T-gate | |
Taguchi method | |
Tandem PV devices | |
TCAD | |
TCAD simulation | |
TCAD simulations | |
TEM | |
temperature | |
Temperature Estimate | |
Temperature Monitor | |
Temperature monitoring | |
tensile strength | |
termination | |
Terrestrial cosmic rays | |
Testability | |
THB | |
THBHV-DC | |
thermal aging | |
Thermal Analysis | |
Thermal balancing | |
Thermal characterization | |
thermal control | |
Thermal coupling | |
Thermal Cycle | |
Thermal Cycling | |
Thermal interface materials | |
Thermal loading | |
thermal model | |
Thermal modeling | |
Thermal resistance | |
thermal runaway | |
thermal shock | |
Thermal simulation | |
Thermal stress | |
thermal stresses | |
Thermo-Mechanical Analysis | |
Thermo-Mechanical-Analysis | |
thin films | |
thin layer | |
thin metal films | |
three level NPC | |
three-phase inverters | |
threshold method | |
Threshold voltage | |
Threshold voltage degradation | |
threshold voltage drift | |
Threshold voltage instability | |
Threshold voltage shift | |
Through Silicon Via | |
TID | |
Time-domain stability anlysis | |
time-resolved emission microscope | |
Tj estimation | |
Topgraphy and Deformation Measurements | |
Topside Interconnections | |
torque ripples | |
Torsion fatigue | |
Total ionizing dose | |
Trace | |
traction | |
traction drive system | |
Traction inverter | |
traction power supply system | |
transient fault tolerance | |
transient liquid phase bonding | |
transistor | |
Transistor Arrangements | |
trap center | |
trapping | |
Trapping phenomena | |
trapping process | |
Traps | |
TSEP | |
tuning | |
U | |
UIS | |
Uncertainty | |
unit-to-unit variability | |
unknown dynamic load | |
urban rail transit | |
UV illumination | |
V | |
Variability | |
vector analysis | |
Vertical diodes | |
Vertical leakage | |
Vertical transistor | |
Vestas' prectice | |
vf-TLP | |
Via | |
Vibration | |
virtual flux | |
Visco-Plasticity | |
VLSI | |
void detection | |
voltage change rate | |
voltage oscillations | |
voltage overshoot | |
Vth Hysteresis | |
W | |
W thin film sandwich structure | |
wafer test | |
Warpage | |
Wavelet transform | |
WBG power devices | |
Weibull model | |
Wide band gap semiconductors | |
wide band-gap semiconductors | |
Wide Bandgap Devices | |
Wire bond | |
wire bond interconnect reliability | |
Wire bonding | |
WLR | |
word-line | |
Work-Function Fluctuation | |
write assist | |
X | |
X-ray imaging | |
Xray tomography of electronics | |
Y | |
Y-source inveter | |
Yellow luminescence | |
Yield optimization | |
Yttrium Oxide |