TALK KEYWORD INDEX
      This page contains an index consisting of author-provided keywords.
| 1 | |
| 100 nm GaN HEMT | |
| 14nm FinFET | |
| 2 | |
| 28nm | |
| 28nm FDSOI CMOS technology | |
| 3 | |
| 3D | |
| 3D image processing | |
| 3D Integration | |
| 4 | |
| 4H-SiC MOSFET | |
| 6 | |
| 600V GaN GIT | |
| A | |
| AA | |
| Accelerated ageing | |
| accelerated aging | |
| accelerated degradation data | |
| accelerated mechanical fatigue test (BAMFIT) | |
| Accelerated Testing | |
| Accessibility | |
| acoustic | |
| acoustic emission | |
| acoustic microscopy | |
| Acoustic Simulation | |
| acoustic wave | |
| Active Thermal Control | |
| Adaptive body biasing | |
| additive manufacturing | |
| AFM | |
| Ag nanowire transparent electrode | |
| Ag paste | |
| Ag stress migration bonding | |
| Ageing | |
| Ageing modes | |
| Aging | |
| aging indicator | |
| AlGaN/GaN | |
| Alpha Source Scanning | |
| Amorphous Si | |
| amorphous-Si (a-Si) thin-film (TF) | |
| Analytics | |
| Annealing | |
| Approximate Circuits | |
| Approximate Library | |
| arbiter PUF | |
| ARM | |
| Arrhenius plot | |
| artificial neural network | |
| ATMR | |
| atomic force microscopy | |
| authentication | |
| Automated | |
| automotive | |
| automotive applications | |
| Automotive Environment | |
| avalanche ruggedness | |
| B | |
| B10 lifetime | |
| back bias voltage | |
| Back gate bias | |
| backside emmi | |
| backside protection | |
| barrier height | |
| Battery | |
| Battery energy storage system | |
| BB | |
| BDC | |
| Bias Temperature Instability | |
| Bias temperature stress | |
| Bias voltage | |
| BiCMOS | |
| Biomass mission | |
| bipolar parasitics | |
| BMS | |
| body bias effect | |
| body built-in current sensors | |
| Bond Wire | |
| bond wire degradation measurement | |
| Bondwire fatigue | |
| boundary determination | |
| Breackdown Voltage of IGZO/AL2O3 TFTs | |
| Breakdown voltage | |
| BTI | |
| buck converter | |
| Buck-Boost Converter | |
| Built-in current sensors | |
| bulk FinFET | |
| C | |
| C-V | |
| CAF | |
| Calendar ageing | |
| Capacitor | |
| Capacitor bank | |
| Capacitor loss analysis | |
| Capacity | |
| carbon | |
| cascade multilevel converter | |
| Cascaded system | |
| CC | |
| Cell capacitor | |
| ceramic capacitor | |
| Chain transition fault | |
| characteristic of ageing precursor | |
| characterization | |
| Charge pumping | |
| Charge Sharing | |
| Charge Transport Mechanisms | |
| Chip backside | |
| Circut level simulation of transistor aging | |
| CMOS | |
| CMOS-MEMS microphone | |
| Cold plate | |
| Combined Test | |
| Common and differential modes | |
| Complex Systems | |
| composition ratio | |
| condition monitoring | |
| conducted EMI | |
| Conductive Anodic Filament | |
| confidence | |
| Contactless testing | |
| Continuum Mechanics | |
| Control strategy | |
| Converters | |
| Cooling | |
| Copper wire | |
| Correlative Microscopy | |
| corrosion | |
| Cosmic ray ruggedness | |
| Counterfeit detection | |
| counterfeit electronic | |
| Coupling factor | |
| crack | |
| Creep | |
| Creep fatigue | |
| creep law | |
| Critical Application | |
| Cross-sectional nanoprobing | |
| Cross-sectional SEM | |
| Crowd Sourcing | |
| crystalline silicon (c-Si) | |
| current balancing | |
| current destruction | |
| current filaments | |
| current overload | |
| Current pulse test | |
| current sensing | |
| current surge | |
| CVS | |
| Cycle ageing | |
| cyclic four-point bending | |
| D | |
| Damped Sinusoidal pulse | |
| data retention | |
| DBC | |
| DC circuit breaker | |
| DC-DC converter | |
| dc-link capacitors | |
| DDR3 SDRAM | |
| deep learning | |
| Defect clustering model | |
| Defect detection | |
| Defect localization | |
| degradation | |
| Degradation indicators | |
| Degradation of battery | |
| Deprocessing | |
| Design | |
| Design for reliability | |
| Design of experiment | |
| Design optimization | |
| device parameters | |
| DFT | |
| di/dt | |
| Diamond-like carbon (DLC) | |
| DICE | |
| Die defect detection | |
| dielectric | |
| Dielectric Charging | |
| Digital circuits | |
| Digital feedback control(DFC) | |
| Digital image correlation | |
| Diode | |
| Diodes | |
| direct power control | |
| Direct Power Injection | |
| discharge voltage | |
| dislocation | |
| displacement damage | |
| dissipated energy | |
| double pulsed testing | |
| drain and source contact resistances | |
| DRAM | |
| Drill Bit Wear Out | |
| drive cycle | |
| Drop test | |
| DTSCR | |
| Dummy cell | |
| DUV LED | |
| Dychotomy | |
| Dynamic Comparator | |
| Dynamic current | |
| dynamic on-resistance | |
| Dynamic Response | |
| E | |
| EBSD | |
| EBSP | |
| EELS | |
| Efficiency degradation | |
| Efficiency improvement | |
| Electric vehicle | |
| electric vehicle motor driver | |
| Electrical characterization | |
| Electrical Injection | |
| electrical overstress | |
| Electrical overstress (EOS) | |
| electrical resistivity | |
| Electrical stress | |
| Electrical Vehicles | |
| Electro-mechanical Actuator | |
| Electro-Optical TLM | |
| Electro-thermal Interactions | |
| electrochemical measurements | |
| electroluminescence | |
| electrolytic capacitor | |
| electromagnetic interference | |
| electronic reliability | |
| Electronics | |
| Electrostatic Discharge | |
| Electrostatic Discharge (ESD) | |
| elevated temperature | |
| Embedded components | |
| embedded processors | |
| EMC | |
| EMP(Electromagnetics Pulse) | |
| Empirical model | |
| encryption | |
| energy destruction | |
| Energy dissipation | |
| EOS | |
| Epoxy resin | |
| Error Detection and Correction (EDAC) | |
| ESA | |
| Experimental mechanics | |
| F | |
| FA | |
| Fail-to-open | |
| failure | |
| Failure analysis | |
| Failure analysis (FA) | |
| Failure Analysis on FINFET | |
| Failure mechanism | |
| Failure mode analysis | |
| failure prediction | |
| failure rate estimation method | |
| fast hole trapping | |
| fast measurement | |
| fatigue | |
| Fatigue failure | |
| Fault current | |
| Fault diagnosis | |
| Fault Isolation | |
| fault location | |
| Fault tolerance | |
| fault tolerance technology | |
| Fault-tolerant | |
| fault-Tolerant control | |
| FDSOI | |
| FE-Simulation | |
| FEM | |
| FEM Reliability Simulation | |
| Field Programmable Gate Array | |
| field reliability | |
| filter | |
| FinFET | |
| FinFET technology | |
| FinFET-based SRAM | |
| FinFETs | |
| Finite Element Analysis | |
| Finite element method | |
| Finite Element Method (FEM) | |
| finite element modeling | |
| Flash reliability | |
| Flexible electric devices | |
| Flexible Thin Film Transistors | |
| Floating gate (FG) | |
| Flying Capacitor | |
| Focused-Ion Beam | |
| Foldable electronic device | |
| Folding fatigue | |
| Fowler-Nordheim | |
| FPGA | |
| full adder | |
| Functionality | |
| Fundamental Frequency | |
| Fuses | |
| fuzzy control | |
| fWLR | |
| G | |
| GaAs | |
| gallium nitride | |
| GaN | |
| GaN HEMT | |
| GaN HEMTs | |
| GaN power HEMT | |
| GaN transistor | |
| GaN-buffer design | |
| GaN-on-si | |
| Gate current | |
| Gate oxide reliability | |
| gate reliability | |
| Gate shielding effect | |
| gate unit reliability | |
| Gaussian process regression | |
| Genetic Algorithm | |
| Golden Sample | |
| Graphene foam | |
| Graphics Processing Units | |
| Grid-connected PV systems | |
| ground bouncing noise | |
| H | |
| H3TRB | |
| Hard breakdown recovery | |
| Hardware attacks | |
| Hardware-based Approach | |
| Harmonic Compensation | |
| harsh environment | |
| HCI | |
| Health Indicators | |
| health prognostics | |
| heating | |
| Heatsink | |
| Heavy ion | |
| Heavy ion irradiation | |
| Heavy Ions | |
| HEMT | |
| HESS; | |
| High density PCBA | |
| High electron mobility transistor | |
| High K | |
| High power IGBT modules | |
| High Temperature Gate Bias (HTGB) | |
| High temperature reverse bias | |
| High temperature storage | |
| high-electron-mobility transistor | |
| High-K | |
| HKMG | |
| Hot carrier | |
| Hot carrier degradation | |
| hot carriers | |
| Hot-carrier injection | |
| hotspots | |
| HPEM | |
| HPEM(High Power Electromagnetics) | |
| HTGB | |
| HTRB | |
| Humidity | |
| hybrid baseplates | |
| hydrogen diffusion | |
| I | |
| I-V | |
| IC Aging Modeling | |
| IC design retrofit | |
| IC design weak point | |
| IC quality | |
| IC security | |
| IDDQ | |
| IEMI | |
| IGBT | |
| IGBT module | |
| IGBT modules | |
| IGBT protection | |
| IGBT reliability | |
| IGCT | |
| imaging | |
| IMC | |
| Immunity | |
| impact of bonding parameters | |
| In-Bi solder | |
| InAlGaN/GaN | |
| indenter | |
| Inflection points | |
| influence factor | |
| InGaAs | |
| InGaN | |
| InGaZnO thin film transistor | |
| Input/Output circuit (I/O) | |
| inspection | |
| Instabilities | |
| Instability | |
| Insulated gate bipolar transistor | |
| Insulated Gate Bipolar Transistors | |
| integer-coded dictionary | |
| Integrated Circuits | |
| integrated health indicator | |
| interface state | |
| intermetallic compound | |
| Internal Resistance | |
| Interval Analysis | |
| intrinsic Stress measurement | |
| Inverters | |
| IR Thermography | |
| irradiation | |
| ITIQ comparator | |
| J | |
| junction temperature | |
| Junction temperature measurement | |
| L | |
| lach design | |
| large area die-attachment | |
| Large Area Solder Joint | |
| Laser deprocess technique | |
| laser diodes | |
| Laser lock-in thermography | |
| Laser Voltage Imaging | |
| Laser Voltage techniques | |
| laser-diode | |
| lead-free | |
| leakage current | |
| LED | |
| LED driver | |
| Life Consumption | |
| Life Prediction | |
| life time | |
| lifetime | |
| lifetime estimation | |
| Lifetime evaluation | |
| Lifetime Modeling | |
| Lifetime prediction | |
| lift-off failure | |
| Light Emitting Diode | |
| Lithium ion battery | |
| Lithium-Ion | |
| lithium-ion battery | |
| LNA | |
| Location of Critical High Carrier Multiplication Spots | |
| Lock-in thermography | |
| Logistic regression | |
| Long term dc bias stability | |
| loss measurement | |
| low dose rate | |
| low frequency concussion | |
| Low-melting temperature | |
| low-temperature PVD PZT | |
| Lumen degradation | |
| M | |
| Machine Learning | |
| Maintainability | |
| Maintenance | |
| manufacturing process | |
| maritime environment | |
| MDSWC | |
| measurement | |
| measurement method | |
| measurement systems | |
| Mechanical Characterization | |
| mechanical damage | |
| mechanical properties characterization | |
| Memory Reliability | |
| MEMS | |
| metal foam | |
| Metal Gate | |
| Metallization | |
| Meteorological Conditions | |
| micro galvanic corrosion | |
| micro-grid; | |
| Microelectronics | |
| microprocessor | |
| Microstructures | |
| MIM Capacitors | |
| Mission Profile | |
| Mission profiles | |
| MLC | |
| MLCC | |
| model predictive control | |
| Modeling | |
| Modeling for reliability | |
| Modelling | |
| Modular cascaded H-bridge MLPVI | |
| Modular Multilevel Converter | |
| Modulation scheme | |
| Modulation Strategies | |
| Moisture | |
| Monitoring | |
| Monte Carlo | |
| Monte-Carlo Simulation | |
| Moore law | |
| MOS interface | |
| MOS interface states | |
| MOS transistor | |
| MOSFET | |
| Motor Drive Reliability | |
| MPG encoder | |
| Multi-chip power modules | |
| multi-physical fields | |
| Multi-physics Modelling and Simulation | |
| Multi-port thermal model | |
| Multichip power module | |
| Multifunctional Inverters | |
| Multiple transient faults | |
| Multiple-Bit Upset (MBU) | |
| multitime programmable (MTP) | |
| mutilayer ceramic capacitor | |
| N | |
| N sleep shuffled phase damping | |
| NAND Flash memory | |
| nano-indentation | |
| nanoprobing | |
| NBTI | |
| near EM field | |
| negative bias temperature instability | |
| Negative Bias Temperature Stress (NBTS) | |
| NIEL | |
| NIR illumination | |
| nMOSFET | |
| Noise | |
| Noisy Environment | |
| Non-Destructive Analysis | |
| Non-destructive testing | |
| non-uniform operation | |
| Non-uniform Temperature | |
| non-volatile memory (NVM) | |
| Numerical modeling | |
| O | |
| object detection | |
| Observer | |
| obsolescence | |
| off shore | |
| OFF-State stress | |
| online condition monitoring | |
| online estimation | |
| online monitoring | |
| Online platform | |
| open defect | |
| Open-circuit fault | |
| Operating-Waveform Analysis | |
| operational amplifiers | |
| optical analysis | |
| optical gain | |
| Optical layer | |
| Organic electronics | |
| Outdoor stress tests | |
| over temperature protection | |
| Oxide breakdown | |
| P | |
| p-GaN gate | |
| p-n junctions | |
| P3HT:PCBM polymeric solar cells | |
| Package reliability | |
| Packages | |
| Parallel | |
| Parallel connected IGBT | |
| Parallel sleep transistor | |
| parameter shifts | |
| parasitic bipolar transistor | |
| Parasitic capacitance | |
| parasitic devices | |
| Parity-per-Byte | |
| partial decapping | |
| partial shadings | |
| particle filter | |
| passivation | |
| Passive Temperature Cycling | |
| passive thermal cycling | |
| PBTI | |
| PCB | |
| PCB embedding | |
| PCB sensor | |
| PCH strong tracking control | |
| Peak minimization | |
| Peltier effect | |
| PEM | |
| PEM Fuel Cell System | |
| Percolation model | |
| Performace | |
| performance | |
| performance index | |
| Permanent magnet synchronous motor | |
| pHEMT | |
| Photo-voltaic | |
| photon emission | |
| photon emission microscopy | |
| Photovoltaic | |
| Photovoltaic modules | |
| Photovoltaic Systems | |
| Physics | |
| physics of failure | |
| PID | |
| piezo resistive | |
| Planar and Collimated Alpha Source | |
| Plasma charging | |
| Poole-Frenkel-like transport | |
| positive bias temperature instability | |
| Positive Gate bias stress | |
| power | |
| Power battery | |
| Power Conditioner | |
| power converter | |
| power coordinated allocation; | |
| Power Cycle | |
| Power Cycling | |
| power cycling test | |
| power device | |
| Power Device Reliability and Robustness | |
| Power devices | |
| power efficiency | |
| Power electronics | |
| Power Electronics Reliability | |
| power integrity(PI) | |
| Power inverter | |
| Power module | |
| power module packaging reliability | |
| Power Modules | |
| Power MOSFET | |
| Power MOSFETs | |
| power pin | |
| Power Semiconductor Devices | |
| Power Semiconductors | |
| Power transistor | |
| Power VDMOSFETs | |
| Power-amplifiers | |
| prediction | |
| pressed contact | |
| Printed circuit board | |
| Printed Circuit Board (PCB) | |
| probing | |
| process optimization | |
| process variability | |
| Process variation | |
| prognostic | |
| Prognostics and health management | |
| Proton | |
| pseudo-failure lifetime | |
| PTM | |
| Pulsed electro-acoustic analysis | |
| PV inverter | |
| PV systems | |
| PWM Inverter | |
| PZT Thin Films | |
| Q | |
| qualification | |
| quality | |
| quantification of margins and uncertainties | |
| quantile regression | |
| quasi-Z-source inverter | |
| Quatro | |
| quiescent current | |
| R | |
| R-Flash ADC | |
| Radiation | |
| Radiation effects | |
| radiation hardened by design | |
| Radiation hardness | |
| Radiation Related Degradation | |
| Radiation-Hardening-by-Design (RHBD) techniques | |
| rail potential | |
| rail transit | |
| Railway traction | |
| Raman spectroscopy | |
| Ramp voltage stress | |
| random failure | |
| RBSOA | |
| Real temperature measurement | |
| Real-time monitoring | |
| Recovery | |
| redundancy | |
| Reliabil | |
| Reliability | |
| Reliability Analysis | |
| Reliability assessment | |
| reliability evaluation | |
| reliability indicators | |
| reliability investigation | |
| reliability model | |
| reliability of capacitor | |
| reliability of SiC MOSFETs | |
| Reliability prediction | |
| Reliabilty Simulation | |
| Reliable Circuits | |
| remaining useful life | |
| renewable energy | |
| Repassivation | |
| Repetitive short-circuit test | |
| Repetitive tests | |
| Resilient | |
| Resistive defects | |
| Resistive RAM | |
| Resistive switching | |
| resistive-random-access memory | |
| Resolution | |
| resonance | |
| RF | |
| RF-MEMS | |
| Robust design | |
| Robustness | |
| Rogowski coil | |
| S | |
| Safe failure mode | |
| safety | |
| Salt Spray Test | |
| SAM | |
| Scaling principle | |
| Scanning Acoustic Microscopy | |
| scanning probe microscopy | |
| Schmitt Trigger | |
| SCSOA | |
| SDRAM | |
| SEB | |
| second breakdown | |
| security | |
| SEE | |
| Self assembly | |
| SEM | |
| semiconductor | |
| Sensitivity Analysis | |
| sensor | |
| separated test method | |
| Shaker | |
| Shear test | |
| shear tests | |
| Shock loading | |
| Shoot-through | |
| Short Circuit | |
| short circuit aging | |
| short pulse power | |
| Short-circuit | |
| Short-circuit capability | |
| short-fault | |
| Si IGBT | |
| SiC | |
| SiC MOSFET | |
| SiC MOSFETs | |
| SiC power module | |
| SiC Power MOSFET | |
| signature statistical analysis | |
| SIHFT | |
| Silicon Carbide | |
| Silicon carbide (SiC) | |
| Silicon Carbide MOSFET | |
| Silicon nitride assisted gate | |
| silicon photonics | |
| silver sinter paste | |
| Silver-sintering die attach | |
| Simulation | |
| Single Event Burnout | |
| Single event cell degradation | |
| single event effects | |
| Single Event Transient | |
| Single Event Transients | |
| single event upset | |
| single poly CMOS | |
| Single-phase rectifier | |
| sinter joining | |
| sinter silver | |
| Sintered Silver | |
| SiON dielectrics | |
| sliding mode speed controller | |
| slow measurement | |
| Snubber | |
| SOA | |
| soft-errors | |
| solar array | |
| solar photovoltaic | |
| solder alloy | |
| solder bumps | |
| Solder die fatigue failure | |
| solder fatigue | |
| Solder joint | |
| solder joint reliability | |
| Solder joints | |
| solder layer degradation measurement | |
| soldering induced residual stress | |
| Space Qualification | |
| Spatial distribution of degradation | |
| Spatial resolution | |
| Spectra | |
| Spectral analysis | |
| spectral photon emission | |
| spectrum | |
| sputtering target | |
| SRAM | |
| SRAM-based FPGA | |
| stability | |
| Staggered phase damping | |
| State of health | |
| statistical analysis | |
| Statistics | |
| Step-stress testing | |
| stochastic finite element analysis | |
| storage degradation modelling | |
| storage reliability of batch products | |
| Stress analysis | |
| stress-counting | |
| Substrate reliability | |
| subthreshold | |
| subthreshold hystereisi | |
| supercapacitors | |
| Superconducting fault current limiter | |
| Support Vector Machine | |
| surge protection | |
| Surge pulse | |
| Surge Test | |
| surge-to-digital converter | |
| Survival analysis | |
| SVM | |
| Switched mode power supply | |
| Switching system | |
| synergetic effects | |
| system voltage ripple | |
| System-in-Package | |
| system-level reliability | |
| T | |
| T-gate | |
| Taguchi method | |
| Tandem PV devices | |
| TCAD | |
| TCAD simulation | |
| TCAD simulations | |
| TEM | |
| temperature | |
| Temperature Estimate | |
| Temperature Monitor | |
| Temperature monitoring | |
| tensile strength | |
| termination | |
| Terrestrial cosmic rays | |
| Testability | |
| THB | |
| THBHV-DC | |
| thermal aging | |
| Thermal Analysis | |
| Thermal balancing | |
| Thermal characterization | |
| thermal control | |
| Thermal coupling | |
| Thermal Cycle | |
| Thermal Cycling | |
| Thermal interface materials | |
| Thermal loading | |
| thermal model | |
| Thermal modeling | |
| Thermal resistance | |
| thermal runaway | |
| thermal shock | |
| Thermal simulation | |
| Thermal stress | |
| thermal stresses | |
| Thermo-Mechanical Analysis | |
| Thermo-Mechanical-Analysis | |
| thin films | |
| thin layer | |
| thin metal films | |
| three level NPC | |
| three-phase inverters | |
| threshold method | |
| Threshold voltage | |
| Threshold voltage degradation | |
| threshold voltage drift | |
| Threshold voltage instability | |
| Threshold voltage shift | |
| Through Silicon Via | |
| TID | |
| Time-domain stability anlysis | |
| time-resolved emission microscope | |
| Tj estimation | |
| Topgraphy and Deformation Measurements | |
| Topside Interconnections | |
| torque ripples | |
| Torsion fatigue | |
| Total ionizing dose | |
| Trace | |
| traction | |
| traction drive system | |
| Traction inverter | |
| traction power supply system | |
| transient fault tolerance | |
| transient liquid phase bonding | |
| transistor | |
| Transistor Arrangements | |
| trap center | |
| trapping | |
| Trapping phenomena | |
| trapping process | |
| Traps | |
| TSEP | |
| tuning | |
| U | |
| UIS | |
| Uncertainty | |
| unit-to-unit variability | |
| unknown dynamic load | |
| urban rail transit | |
| UV illumination | |
| V | |
| Variability | |
| vector analysis | |
| Vertical diodes | |
| Vertical leakage | |
| Vertical transistor | |
| Vestas' prectice | |
| vf-TLP | |
| Via | |
| Vibration | |
| virtual flux | |
| Visco-Plasticity | |
| VLSI | |
| void detection | |
| voltage change rate | |
| voltage oscillations | |
| voltage overshoot | |
| Vth Hysteresis | |
| W | |
| W thin film sandwich structure | |
| wafer test | |
| Warpage | |
| Wavelet transform | |
| WBG power devices | |
| Weibull model | |
| Wide band gap semiconductors | |
| wide band-gap semiconductors | |
| Wide Bandgap Devices | |
| Wire bond | |
| wire bond interconnect reliability | |
| Wire bonding | |
| WLR | |
| word-line | |
| Work-Function Fluctuation | |
| write assist | |
| X | |
| X-ray imaging | |
| Xray tomography of electronics | |
| Y | |
| Y-source inveter | |
| Yellow luminescence | |
| Yield optimization | |
| Yttrium Oxide | |