Electrical and reliability characterization with optimized extrapolation models of two- and three-dimensional Metal-Insulator-Metal decoupling capacitors with ZrAlxOy high-κ dielectric under BEoL-friendly conditions (abstract)
17:40
Jaehyeong Lee (samsung electronics, South Korea) Byoungwook Woo (samsung electronics, South Korea) Yumi Lee (samsung electronics, South Korea) Namhyun Lee (samsung electronics, South Korea) Young-Yun Lee (samsung electronics, South Korea) Yunsung Lee (samsung electronics, South Korea) Seungbum Ko (samsung electronics, South Korea) Sangwoo Pae (samsung electronics, South Korea)
Vertically Scaled Cu/low-k Interconnect Development for BEOL Reliability Improvement of 12nm DRAM (abstract)
Design-of-Experiments and ALT plan for reliability qualification of chip resistors based on mission profile of AIMDs (abstract)
10:20
Ui Hyo Jeong (Korea Testing Certification, South Korea) Seongyong Lim (Incheon National University, South Korea) Seung Su Han (Korea Testing Certification, South Korea)
Reliability Assurance in Foldable Displays: Design of Experiment-Based Testing Strategy for Market-Ready Products (abstract)
New statistical analysis methodology to forecast the memory cell behavior before reliability test (abstract)
11:00
Frederic Sehr (Fraunhofer Institute for Reliability and Microintegration (IZM), Berlin, Germany, Germany) Stefan Wagner (Fraunhofer Institute for Reliability and Microintegration (IZM), Berlin, Germany, Germany) Adelja Schulz (Fraunhofer Institute for Reliability and Microintegration (IZM), Berlin, Germany, Germany) Alexander Vorwerk (Fraunhofer Institute for Reliability and Microintegration (IZM), Berlin, Germany, Germany)
Condition Monitoring for Detection of Humidity-Induced Failures in Control Electronics of Power Converters (abstract)
Aging modelling of Li-Ion Battery Systems based on accelerated tests (abstract)
10:40
Mohamed Belguith (LATIS- Université de Sousse, ENISo Sousse,Tunisia / Université Rouen Normandie/ ESIGELEC/ IRSEEM, 76000 Rouen, France, France) Sonia Eloued (LATIS- Laboratory of Advanced Technology and Intelligent Systems Université de Sousse, ENISo Sousse, Tunisia, Tunisia) Moncef Kadi (Université Rouen Normandie / ESIGELEC / IRSEEM , 76000 Rouen, France, France) Jaleleddine Ben Hadj Slama (LATIS- Laboratory of Advanced Technology and Intelligent Systems Université de Sousse, ENISo Sousse, Tunisia, Tunisia)
Development challenges of a one-sided GaN-based high-current density buck converter through multiphysics optimization for electric vehicle applications (abstract)
SMART Protection Design of Automotive Power Distribution Systems with Temperature-Based Electronic Fuses: Mathematical Background, Design Guidelines and Drawbacks of Energy-Based Methods (abstract)
Xue Zhou (Harbin Institute of Technology, China) Mingxu Zhang (Harbin Institute of Technology, China) Donghui Li (Harbin Institute of Technology, China) Chensong Ji (Harbin Institute of Technology, China) Le Xu (Harbin Institute of Technology, China) Guofu Zhai (Harbin Institute of Technology, China)
Degradation model for insulation characteristics of tantalum capacitors related to manufacturing parameters and stress (abstract)
Le Xu (Harbin Institute of Technology, Harbin, China, China) Yuyao Zhao (Harbin Institute of Technology, Harbin, China, China) Shujuan Wang (Harbin Institute of Technology, Harbin, China, China)
Research on The Degradation of Contact Resistance of Wire-Spring Contacts in Different Wear Condition (abstract)
Ya Jing Zhang (Beijing Information Science and Technology University, China) Xin Yu Ao (Beijing Information Science and Technology University, China) Hong Li (Beijing Jiaotong University, China) Xiu Teng Wang (China National Institute of Standardization, China)
Reliability Design of GaN Based High-frequency Inverter Optimization (abstract)
Correlating time and voltage laws in BTI (abstract)
John Theocharis (National and Kapodistrian University of Athens, Greece) Spiros Gardelis (National and Kapodistrian University of Athens, Greece) George Papaioannou (National and Kapodistrian University of Athens, Greece)
Evidence of resistive switching in SiNx thin films for MEMS capacitors: the role of metal contacts (abstract)
Tiang Teck Tan (Singapore University of Technology and Design, Singapore) Tian-Li Wu (National Yang Ming Chiao Tung University, Taiwan) Kalya Shubhakar (Singapore University of Technology and Design, Singapore) Nagarajan Raghavan (Singapore University of Technology and Design, Singapore) Kin Leong Pey (Singapore University of Technology and Design, Singapore)
Recovery and Unrecovered Damage During Interrupted CVS in MFIS FE devices (abstract)
HTRB effects on threshold instability of 4H-SiC PowerMOSFET with carrots defects (abstract)
Xuerong Ye (Harbin Institute of Technology, China) Qisen Sun (City University of Hong Kong, Hong Kong) Ruyue Zhang (China Jiliang University, China) Junpeng Gao (Harbin Institute of Technology, China) Haodong Wang (Harbin Institute of Technology, China) Guofu Zhai (Harbin Institute of Technology, China)
Thermal layout optimization of electrolytic capacitors considering degradation self-acceleration effect for reliability improvement (abstract)
Semi-supervised parameter estimation for Synthetic Aperture Focusing in Scanning Acoustic Microscopy for a 3D reconstruction of plastic molded electronic devices (abstract)
He Zhang (Harbin Institute of Technology, China) Li Wang (Harbin Institute of Technology, China) Jiwen Cui (Harbin Institute of Technology, China)
Reliability detection and analysis of elliptical holes corresponding to defects in electrothermal environment (abstract)
Aging impact of the SiC Mosfet gate dielectric (abstract)
Jianbo Xin (School of Material Science and Chemical Engineering, Harbin University of Science and Technology, China) Xiaochun Lv (Harbin Welding Institute Limited Company, China) Yue Gao (Heraeus Electronic Technology, Heraeus Materials Technology Shanghai, China) Le Yang (School of Material Science and Chemical Engineering, Harbin University of Science and Technology, China) Sushi Liu (School of Material Science and Chemical Engineering, Harbin University of Science and Technology, China) Ke Li (School of Material Science and Chemical Engineering, Harbin University of Science and Technology, China) Minghao Zhou (School of Electrical and Electronics, Harbin University of Science and Technology, China) William Cai (School of Electrical and Electronics, Harbin University of Science and Technology., China) Jing Zhang (Heraeus Electronic Technology, Heraeus Materials Technology Shanghai, China) Yang Liu (School of Material Science and Chemical Engineering, Harbin University of Science and Technology, China)
Failure mode competition and long-term reliability in the isothermal aging of sintered Cu joints (abstract)
Ziheng Wang (Aalborg University, Denmark) Yi Zhang (Aalborg University, Denmark) Huai Wang (Aalborg University, Denmark)
Investigating the thermal degradation trends for thermal interface materials in the power converter (abstract)
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching (abstract)
Martin Votava (Fraunhofer Institute for Silicon Technology ISIT,, Germany) Karthik Debbadi (Fraunhofer Institute for Silicon Technology ISIT, Germany) Gopal Mondal (Siemens AG, Germany) Sebastian Nielebock (Siemens AG, Germany) Yoann Pascal (Fraunhofer Institute for Silicon Technology ISIT, Germany) Marco Liserre (Fraunhofer Institute for Silicon Technology ISIT; Chair of Power Electronics, Kiel University, Germany)
Multi-sensor Data Fusion for Prediction of Remaining Useful Life of IGBT Power Modules (abstract)
Effect of Drain Field Plate design and 2DEG density on Dynamic-RON of 650V AlGaN/GaN HEMTs (abstract)
Kaihong Hou (National University of Defense Technology, Changsha, China, China) Zhengwei Fan (National University of Defense Technology, Changsha, China, China) Xun Chen (National University of Defense Technology, Changsha, China, China) Shufeng Zhang (National University of Defense Technology, Changsha, China, China) Yashun Wang (National University of Defense Technology, Changsha, China, China) Yu Jiang (National University of Defense Technology, Changsha, China, China)
Evolution analysis of mechanical behavior of through‑silicon via under thermal cycling load (abstract)
Long-Term Positive and Negative Gate Bias Stress Tests on Parallel Connected SiC MOSFETs at -40°C and 175°C (abstract)
Pengwei Li (China Academy of Space Technology, China) Liang Zhen (School of Materials Science and Engineering Harbin Institute of Technology, China) Xingji Li (School of Materials Science and Engineering Harbin Institute of Technology, China) Jianqun Yang (School of Materials Science and Engineering Harbin Institute of Technology, China) Hongwei Zhang (China Academy of Space Technology, Chile) Guohe Zhang (School of Microelectronics, Xi’an Jiaotong University, Xi’an, China, China) Xuhui Wang (School of Microelectronics, Xi’an Jiaotong University, Xi’an, China, China) Yi Sun (China Academy of Space Technology, China) Qingkui Yu (China Academy of Space Technology, China) Qianyuan Wang (China Academy of Space Technology, China)
Single Event Irradiation Damage Effect of SiC MOSFETs Based on Degradation of Forward Conduction Characteristic (abstract)
Bin Yu (1.Nanjing University of Information Science and Technology;2. Zhejiang University;3.Yongjiang Laboratory, China) Xingjian Shi (Polytechnic Institute of Zhejiang University, Gong Shu District, Hangzhou, China, China) Hongyi Gao (College of Electrical Engineering, Zhejiang University, Xihu District, Hangzhou, China, China) Haoze Luo (College of Electrical Engineering, Zhejiang University, Xihu District, Hangzhou, China, China) Wenbo Wang (Yongjiang Laboratory, Ningbo, China, China) Francesco Iannuzzo (Department of Energy Technology, Aalborg University, Denmark, Denmark) Wuhua Li (College of Electrical Engineering, Zhejiang University, Xihu District, Hangzhou, China, China)
Stress comparison of several short-circuit types on SiC MOSFET packaging (abstract)
Mustafa Shqair (Lab. Laplace - CNRS - University of Toulouse, France) Emmanuel Sarraute (Lab. Laplace - CNRS - University of Toulouse, France) Frédéric Richardeau (Lab. Laplace - CNRS - University of Toulouse, France)
Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D Simulation (abstract)
Simone Longato (Department od Information Engineering, University of Padova, Italy) Davide Favero (Department od Information Engineering, University of Padova, Italy) Arno Stockman (BelGaN, Oudenaarde Belgium, Belgium) Arianna Nardo (BelGaN, Oudenaarde Belgium, Belgium) Piet Vanmeerbeek (BelGaN, Oudenaarde Belgium, Belgium) Marnix Tack (BelGaN, Oudenaarde Belgium, Belgium) Gaudenzio Meneghesso (Department od Information Engineering, University of Padova, Italy) Enrico Zanoni (Department od Information Engineering, University of Padova, Italy) Carlo De Santi (Department od Information Engineering, University of Padova, Italy) Matteo Meneghini (Department od Information Engineering, University of Padova, Italy)
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate (abstract)
Shiwei Zhao (Institute of Modern Physics, Chinese Academy of Sciences, China) Yuzhu Liu (Institute of Modern Physics, Chinese Academy of Sciences, China) Xiaoyu Yan (Institute of Modern Physics, Chinese Academy of Sciences, China) Peipei Hu (Institute of Modern Physics, Chinese Academy of Sciences, China) Xinyu Li (Institute of Modern Physics, Chinese Academy of Sciences, China) Qiyu Chen (Institute of Modern Physics, Chinese Academy of Sciences, China) Pengfei Zhai (Institute of Modern Physics, Chinese Academy of Sciences, China) Teng Zhang (Nanjing Electronic Devices Institute, China) Li Cai (Institute of Modern Physics, Chinese Academy of Sciences, China) Yang Jiao (Institute of Modern Physics, Chinese Academy of Sciences, China) Youmei Sun (Institute of Modern Physics, Chinese Academy of Sciences, China) Jie Liu (Institute of Modern Physics, Chinese Academy of Sciences, China)
Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs (abstract)
Mehdi Ghrabli (SATIE Laboratory, ENS Paris Saclay, France) Mounira Bouarroudj (SATIE Laboratory, Paris EST Créteil University, France) Ludovic Chamoin (LMPS Laboratory Université Paris-Saclay / CentraleSupélec / ENS Paris-Saclay / CNRS, France) Emanuel Aldea (SATIE Laboratory, Paris Saclay university, France)
Physics informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules (abstract)
Yu Wang (Harbin Institute of Technology, China) Yong Xie (GA Technologies Co.Ltd., China) Huimin Liang (Harbin Institute of Technology, China) Hangyu Ma (Harbin Institute of Technology, China)
Remaining Useful Life Prediction of DC Contactor Based on LSTM (abstract)
Investigation of the long-term dynamic Rds(ON) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress conditions (abstract)
Jae-Seong Jeong (Korea Electronics Technology Institute (KETI), South Korea)
Creep tester for quality assessment of solder joints using normal and thermal stress (abstract)
Yun-Chan Kim (Korea Institute of Industrial Technology (KITECH), South Korea) Dong-Yurl Yu (Korea Institute of Industrial Technology (KITECH), South Korea) Shin-il Kim (Korea Institute of Industrial Technology (KITECH), South Korea) Yong-Mo Kim (Korea Instrument Co., Ltd., South Korea) Dongjin Byun (Korea University, South Korea) Junghwan Bang (Korea Institute of Industrial Technology (KITECH), South Korea) Dongjin Kim (Korea Institute of Industrial Technology (KITECH), South Korea)
Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally strong? (abstract)
Hong Li (Beijing Jiaotong University, China) Yixiang Zhao (Beijing Jiaotong University, China) Xiaofei Hu (Beijing Jiaotong University, China) Qinghao Zhang (Tsinghua University, China)
Online Junction Temperature Monitoring of SiC MOSFET Based On The Maximum Drain Current Change Rate During The Process of Opening (abstract)
Yunseok Han (Yonsei University, South Korea) Sunho Kim (Wooriro Co., South Korea) Ilgu Yun (Yonsei University, South Korea)
Efficient Long-term Reliability Assessment of Planar InGaAs/InP Avalanche Photodiodes using Accelerated Step-Stress Test (abstract)
Ping Liu (College of Electrical and Information Engineering, Hunan University, Changsha, China, China) Yongjie Liu (College of Electrical and Information Engineering, Hunan University, Changsha, China, China) Qi Cao (College of Electrical and Information Engineering, Hunan University, Changsha, China, China) Biao Xiao (College of Electrical and Information Engineering, Hunan University, Changsha, China, China) Chunming Tu (College of Electrical and Information Engineering, Hunan University, Changsha, China, China)
Active Gate Driver for Current Overshoot Suppression of SiC+Si Hybrid Switches with Dynamic gate Current Regulation (abstract)
Benewende Diane Raïnatou Bonkoungou (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France, France) Romain Gwoziecki (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France, France) Gaetan Perez (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France, France) Leo Sterna (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France, France) Zoubir Khatir (SATIE, Univ. Gustave Eiffel, 78000 Versailles, France, France)
Optimized Semi-Physical EKV Model for Simulation of SiC MOSFETs (abstract)
A study of UIS ruggedness of mismatched paralleled SiC MOSFETs (abstract)
Alejandro Urena-Acuna (ONERA, DPHY, Université de Toulouse, France) Julien Favrichon (CEA, DES, ISEC, DPME, LNPA, Univ. Montpellier. Marcoule France, France) Aurelien Ballier (Univ. Montpellier, France) Pierre-Alexis Robin (Univ. Montpellier, France) Vincent Gironés (Université de Montpellier, IES-UMR UM/CNRS 5214, France) Tadec Maraine (Université de Montpellier, IES-UMR UM/CNRS 5214, France) Frederic Saigné (Université de Montpellier, IES-UMR UM/CNRS 5214, France) Jerome Boch (Université de Montpellier, IES-UMR UM/CNRS 5214, France)
The Use of Filtered High-Energy X-rays and 60Co for TID Testing of a 32-Bit 28nm FDSOI DSP (abstract)
Hui Teng Tan (Singapore-MIT Alliance for Research and Technology, Singapore, Singapore) Wardhana A. Sasangka (Singapore-MIT Alliance for Research and Technology, Singapore, Singapore) Yu Gao (Singapore-MIT Alliance for Research and Technology, Singapore, Singapore) Kenneth Eng Kian Lee (Singapore-MIT Alliance for Research and Technology, Singapore, Singapore) Carl V. Thompson (Massachusetts Institute of Technology, USA, United States) Chee Lip Gan (Nanyang Technological University, Singapore, Singapore)
Comprehensive LED Reliability Assessment through Integrated Real-Time Visualization, Electrical, and Optical Analysis (abstract)
Minh Long Hoang (Department of Engineering and Architecture, University of Parma, Parma 43124, Italy, Italy) Simone Daniele (Federal-Mogul Italy s.r.l., Carpi 41012, Modena, Italy, Italy) Nicola Delmonte (Department of Engineering and Architecture, University of Parma, Parma 43124, Italy, Italy) Massimo Dal Re (Federal-Mogul Italy s.r.l., Carpi 41012, Modena, Italy, Italy) Paolo Cova (Department of Engineering and Architecture, University of Parma, Parma 43124, Italy, Italy) Danilo Santoro (Department of Engineering and Architecture, University of Parma, Parma 43124, Italy, Italy)
Machine learning classification for failure analysis of smart spark plugs (abstract)
Nils Zöllner (Infineon Technologies AG, Germany) Oliver Schilling (Infineon Technologies AG, Germany) David Übelacker (Infineon Technologies AG, Germany) Hans-Günter Eckel (University of Rostock, Institute for Electrical Power Engineering, Germany) Tobias Heise (University of Rostock, Institute for Electrical Power Engineering, Germany)
Lifetime prediction for power modules in wind-energy converters based on temperature variations in a large area substrate solder connection (abstract)
14:40
Dawei Zhao (Fraunhofer Institute for Integrated Systems and Device Technology, Germany) Sebastian Letz (Fraunhofer-Institute for Integrated Systems and Device Technology, Germany) Jürgen Leib (Fraunhofer-Institute for Integrated Systems and Device Technology, Germany) Bernd Eckardt (Fraunhofer-Institute for Integrated Systems and Device Technology, Germany)
On the Validity of Rainflow Counting-Based Lifetime Assessment for Power Electronics Assembly (abstract)
15:00
Zijian Guo (Department of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China) Hao Chen (Department of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China) Yifan Hu (Department of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China) Xuerong Ye (School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China, China)
Reliability Prediction of Electronic Components based on Physical of Failure with Manufacturing Parameters Fluctuations (abstract)
15:20
Weiming Liu (Department of Electrical Engineering & Automation, Harbin Institute of Technology, China) Cen Chen (Department of Electrical Engineering & Automation, Harbin Institute of Technology, China) Wei Zheng (Beijing Aerospace Automatic Control Research Institute, China) Mingtao Feng (Beijing Aerospace Automatic Control Research Institute, China) Xuerong Ye (Department of Electrical Engineering & Automation, Harbin Institute of Technology, China) Guofu Zhai (Department of Electrical Engineering & Automation, Harbin Institute of Technology, China)
Reliability prediction of multi-level power supply system based on failure precursor parameters (abstract)
15:40
Yifei Zheng (National University of Defense Technology, China) Jianfei Wu (National University of Defense Technology, China) Yanfang Lu (Tianjin Institute of Advanced Technology, China) Yang Li (Tianjin Institute of Advanced Technology, China) Hongli Zhang (Tianjin Institute of Advanced Technology, China) Peiguo Liu (National University of Defense Technology, China)
A New Methodology of Modeling Conducted Emission Behavioural in System-in-Packages (SiP) (abstract)
Wenxin Dai (School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin 150001, China, China) Xue Zhou (School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin 150001, China, China) Zhigang Sun (School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin 150001, China, China) Guofu Zhai (School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin 150001, China, China)
Series AC Arc Fault Diagnosis Method Based on Spectrogram and Deep Residual Network (abstract)
Analysis and experimental verification of current sharing among parallel-connected dc-link capacitors in a fast-switching converter (abstract)
15:20
Mohamed Tlig (LATIS-ENISo, National Engineering School of Sousse, University of Sousse, 4023 Sousse, Tunisia, Tunisia) Bessem Zitouna (LATIS-ENISo, National Engineering School of Sousse, University of Sousse, 4023 Sousse, Tunisia, Tunisia) Mahmoud Hammouda (LATIS-ENISo, National Engineering School of Sousse, University of Sousse, 4023 Sousse, Tunisia, Tunisia) Jaleleddine Ben Hadj Slama (LATIS-ENISo, National Engineering School of Sousse, University of Sousse, 4023 Sousse, Tunisia, Tunisia) Moncef Kadi (IRSEEM / ESIGELEC, France)
Conducted EMI Assessment of Aging Power Si-MOSFET in 3 phase inverter (abstract)
(Invited) Advanced Methodology and Understanding of GaN Device Reliability
09:00
Lukas R. Farnbacher (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany) Jürgen Leib (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany) Fabian Dresel (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany) Andreas Schletz (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany) Bernd Eckardt (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany) Jörg Schulze (Friedrich-Alexander-University of Erlangen-Nürnberg, Germany, Germany)
Gate voltage modulation for power cycling tests of SiC MOSFETs and its influence on temperature distribution (abstract)
Fast high-resolution X-ray nano tomography for failure analysis in advanced packaging (abstract)
11:20
Lei Zhang (Harbin Institute of Technology，China Aviation Optical-Electrical Technology Co., Ltd., China) Shujuan Wang (Harbin Institute of Technology, China) Xueyong Chen (China Aviation Optical-Electrical Technology Co., Ltd., China) Jianshe Guo (China Aviation Optical-Electrical Technology Co., Ltd., China) Le Xu (Harbin Institute of Technology, China) Sanqiang Ling (China Aviation Optical-Electrical Technology Co., Ltd., China) Xiaojuan Zhang (China Aviation Optical-Electrical Technology Co., Ltd., China)
Failure Analysis of Gold-plated Fuzz Button Contacts in Elevated Temperature (abstract)
11:40
Thomas Adlmaier (Infineon Technologies Dresden GmbH, Germany) Stefan Doering (Infineon Technologies Dresden GmbH, Germany) Boris Binder (Infineon Technologies Dresden GmbH, Germany) Daniel K. Simon (Infineon Technologies Dresden GmbH, Germany) Lukas M. Eng (Institute of Applied Physics, University of Technology Dresden, Germany) Thomas Mikolajick (Namlab gGmbH; Chair of Nanoelectronic Materials, University of Technology Dresden, Germany)
Dominik Wieland (TU Vienna, Infineon Technologies Austria AG, Austria) Boris Butej (TU Vienna, Kompetenzzentrum Automobil- u. Industrieelektronik, Austria) Manuel Stabentheiner (TU Vienna, Infineon Technologies Austria AG, Austria) Christian Koller (Infineon Technologies Austria AG, Austria) Dionyz Pogany (TU Vienna, Austria) Clemens Ostermaier (Infineon Technologies Austria AG, Austria)
Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs (abstract)
11:00
Lukas Hein (Chemnitz University of Technology, Germany) Patrick Heimler (Chemnitz University of Technology, Germany) Tobias Lentzsch (Chemnitz University of Technology, Germany) Josef Lutz (Chemnitz University of Technology, Germany) Thomas Basler (Chemnitz University of Technology, Germany)
Advanced Power Cycling Test Strategies on Discrete SiC MOSFETs in Different Operating Modes and the Impact on Life-time (abstract)
11:20
Maroun Alam (IRT Saint Exupéry, Toulouse, France, France) Valeria Rustichelli (IRT Saint Exupéry, Toulouse, France, France) Moustafa Zerarka (IRT Saint Exupéry, Toulouse, France, France) Christophe Banc (Safran Electronics & Defense, France) Jean-Francois Pieprzyk (STMicroelectronics, Toulouse, France, France) Olivier Perrotin (Alter Technology, Toulouse, France, France) Romain Ceccarelli (Alter Technology, Toulouse, France, France) David Tremouilles (LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France, France) Mohamed Matmat (IRT Saint Exupéry, Toulouse, France, France) Fabio Coccetti (IRT Saint Exupéry, Toulouse, France, France)
Gate lifetime investigation at low temperature for p-GaN HEMT (abstract)
11:40
Patrick Heimler (Chemnitz, University of Technology, Germany) Sandro Richter (Technical University Chemnitz, Germany) Josef Lutz (Technical University Chemnitz, Germany) Thomas Basler (Chemnitz University of Technology, Germany)
Reliability of Discrete SiC MOSFETs under Temperature-Shock and Power Cycling Tests (abstract)
Yingqi Wang (Harbin Institute of Technology, China) Yuchen Song (Harbin Institute of Technology, China) Runze Yu (Harbin Institute of Technology, China) Shengwei Meng (Harbin Institute of Technology, China) Yu Peng (Harbin Institute of Technology, China) Datong Liu (Harbin Institute of Technology, China)
Spacecraft Sensor Reliability Improvement Based On Temporal Digital Twin Model (abstract)
Hong Li (Beijing JiaoTong University, China) Kuang Zhang (Beijing JiaoTong University, China) Jinchang Pan (Beijing JiaoTong University, China)
A Floquet Theory-Based Stability Analysis Method for PV-Storage Independent DC Microgrid (abstract)
Ziheng Wang (Aalborg University, Denmark) Yi Zhang (Aalborg University, Denmark) Huai Wang (Aalborg University, Denmark)
Machine learning-based surrogate models for finned heatsink optimization (abstract)
Simone Carta (Department of Electrical and Electronic Eng., University of Cagliari, Cagliari, Italy, Italy) Alessandro Urru (Nurjana Technologies srl, Italy) Michela Musa (Nurjana Technologies srl, Italy) Pietro Andronico (Nurjana Technologies srl, Italy) Giovanna Mura (Department of Electrical and Electronic Eng., University of Cagliari, Cagliari, Italy, Italy)
Electronics authentication using electrical measurements and machine learning (abstract)
Charging effects in alumina layers deposited with different precursors for microelectronic applications (abstract)
Yujin Kim (School of Electrical, Electronics and Communication Engineering, KOREATECH, South Korea) Yeohyeok Yun (School of Electrical, Electronics and Communication Engineering, KOREATECH, South Korea)
Enhancing AC Degradation Modeling by Considering the Degradation Profile in SiON pMOSFETs (abstract)
Sandra Veljković (Faculty of Electronic Engineering, University of Nis, Nis, Serbia, Serbia) Nikola Mitrović (Faculty of Electronic Engineering, University of Nis, Nis, Serbia, Serbia) Vojkan Davidović (Faculty of Electronic Engineering, University of Nis, Nis, Serbia, Serbia) Albena Paskaleva (Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia 1734, Bulgaria, Bulgaria) Dencho Spassov (Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia 1734, Bulgaria, Bulgaria) Igor Jovanović (Faculty of Electronic Engineering, University of Nis, Nis, Serbia, Serbia) Emilija Živanović (Faculty of Electronic Engineering, University of Nis, Nis, Serbia, Serbia) Goran Ristić (Faculty of Electronic Engineering, University of Nis, Nis, Serbia, Serbia) Danijel Danković (Faculty of Electronic Engineering, University of Nis, Nis, Serbia, Serbia)
The effects of NBT stressing on later operation of power VDMOS transistors under normal conditions (abstract)
A Submodule Capacitor Degradation Balancing Control with Capacitor Parameter Monitoring of a Modular Multilevel Converter for a Battery Energy Storage System (abstract)
Wenyan Wang (China Academy of Space Technology, China)
Assembly reliability of ceramic small outline packaged devices (abstract)
Nicola Delmonte (University of Parma - Department of Engineering and Architecture, Italy) Davide Spaggiari (University of Parma - Department of Engineering and Architecture, Italy) Corrado Sciancalepore (University of Parma - Department of Engineering and Architecture, Italy) Roberto Menozzi (University of Parma - Department of Engineering and Architecture, Italy) Paolo Cova (University of Parma - Department of Engineering and Architecture, Italy)
FEM-based development of novel 3D-printable plastic direct coolers for power semiconductor modules (abstract)
Evaluation with FEM Analysis of peak case non-rupture current for power devices working at very high current (abstract)
Zhihao Guo (School of Materials Science and Engineering, Hefei University of Technology, China) Shuibao Liang (School of Materials Science and Engineering, Hefei University of Technology, China) Saran Ramachandran (Advanced Forming Research Centre, University of Strathclyde, UK) Han Jiang (School of Integrated Circuits, Anhui University, China) Yaohua Xu (School of Integrated Circuits, Anhui University, China) Zhihong Zhong (School of Materials Science and Engineering, Hefei University of Technology, China)
Microstructure-based fatigue analysis of SiC power module with sintered silver die attach (abstract)
Understanding improved pitting corrosion resistance under high temperature application leading to a newly developed palladium coated copper wire (abstract)
Matteo Greatti (Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy) Jurij Lorenzo Mazzola (Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy) Lorenzo Cantù (Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy) Christian Monzio Compagnoni (Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy) Alessandro Spinelli (Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy) Dario Paci (STMicroelectronics, Italy) Fabrizio Speroni (STMicroelectronics, Italy) Michele Lauria (STMicroelectronics, Italy) Vincenzo Marano (STMicroelectronics, Italy) Gerardo Malavena (Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy)
Impact of Device Encapsulation on the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation (abstract)
Solder Stop as a Reliable Insulation Layer on Printed Circuit Boards – Different Layouts and Materials under Humidity and High Voltage (abstract)
Shuo Liu (Harbin Institute of Technology, China) Fengkai Liu (Harbin Institute of Technology, China) Zhongli Liu (Harbin Institute of Technology, China) Lei Wu (Harbin Institute of Technology, China) Jianqun Yang (Harbin Institute of Technology, China) Xingji Li (Harbin Institute of Technology, China)
The Effect of Trench Depth on Single-Event Burnout Hardening of Split-Gate-Trench MOSFET (abstract)
Ole Bergmann (Delft University of Technology, Netherlands) Tim Böttcher (Nexperia Germany GmbH, Germany) Hoan Vu (Nexperia Germany GmbH, Germany) Hoc Khiem Trieu (Hamburg University of Technology, Germany)
Thermal Impedance and Local Thermal Runaway during Surge Events in Power Rectifiers (abstract)
Separate Investigation of Performance Degradation for the Si and GaN parts in Cascode GaN devices under Repetitive Short Circuits (abstract)
Bang-Ren Chen (National Yang Ming Chiao Tung University, Taiwan) Cheng Sung (National Yang Ming Chiao Tung University, Taiwan) Yu-Sheng Hsiao (National Yang Ming Chiao Tung University, Taiwan) Wei-Chen Yu Yu (Hon Hai Research Institute, Taiwan) Yi-Jun Dong (National Yang Ming Chiao Tung University, Taiwan) Wei-Cheng Lin (National Yang Ming Chiao Tung University, Taiwan) Surya Elangovan (Hon Hai Research Institute, Taiwan) Yi-Kai Hsiao (Hon Hai Research Institute, Taiwan) Hao-Chung Kuo (Hon Hai Research Institute, Taiwan) Chang-Ching Tu (National Central University, Taiwan) Tian-Li Wu (National Yang Ming Chiao Tung University, Taiwan)
Investigation of Trade-off between Switching Loss and Gate Overshoot in SiC MOSFETs by Driving Waveform Modification (abstract)
A Geometry-Scalable Electrothermal Compact Circuit Model of SiC MPS Diodes Accounting for the Snapback Mechanism: Application to Current Surge Events (abstract)
Degradation of SiC-MOSFETs Utilized in Bidirectional Switch for Grid Applications Under Over Current Stress (abstract)
Guesuk Lee (Korea Electronics Technology Institute, South Korea) Jemin Kim (Korea Electronics Technology Institute, South Korea) Byongjin Ma (Korea Electronics Technology Institute, South Korea)
Thermal Performance Comparison of Wide Bandgap Power Modules by Simulation (abstract)
ESD Human Body Model step stress distributions of GaN HEMTs and the correlation with one level test results (abstract)
Ke Li (Harbin University of Science and Technology, China) Jianbo Xin (Harbin University of Science and Technology, China) Xiaochun Lv (Harbin Welding Institute Limited Company, China) Jun You (Harbin University of Science and Technology, China) Minghao Zhou (Harbin University of Science and Technology, China) William Cai (Harbin University of Science and Technology, China) Jicun Lu (Zhuhai Fudan Innovation Research Institute, China) Yang Liu (Harbin University of Science and Technology, China)
Improving Large-Area Sintering Reliability of Power Module Systems Using Copper Paste/Film (abstract)
Hyoungseuk Choi (Korea Institute of Ceramic Engineering and Technology, South Korea)
Development of Life Prediction Model based on Physics-of-Failure for Negative Temperature Coefficient Thermistor (abstract)
Yinyin Shang (Institute of Microelectronics of the Chinese Academy of Sciences, China) Chenhe Gao (Institute of Microelectronics of the Chinese Academy of Sciences, China) Xing Zhao (Institute of Microelectronics of the Chinese Academy of Sciences, China) Binhong Li (Institute of Microelectronics of the Chinese Academy of Sciences, China) Jianzhong Li (Guangdong Greater Bay Area Institute of Integrated Circuit and System, China) Jianfei Wu (Tianjin Adance Technology Institutes, China) Hongli Zhang (Tianjin Adance Technology Institutes, China) Yang Li (Tianjin Adance Technology Institutes, China) Jun Luo (Institute of Microelectronics of the Chinese Academy of Sciences, China) Tianchun Ye (Institute of Microelectronics of the Chinese Academy of Sciences, China)
Synergistic Effect of Total Ionizing Dose and Electromagnetic Interference in SRAM using 22nm FDSOI technology (abstract)
Tobias Lentzsch (Chair of Power Electronics, Chemnitz University of Technology, Germany) Josef Lutz (Technical University Chemnitz, Germany) Thomas Basler (Chemnitz University of Technology, Germany)
The impact of mold compound on power cycling capability of SiC MOSFETs in double sided cooled modules (abstract)
Toward understanding the impacts of dynamic Ron on the efficiency in GaN-based AC-DC flyback converter (abstract)
14:40
Manuel Fregolent (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Francesco Bergamin (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Davide Favero (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Carlo De Santi (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Christian Huber (Department for Advanced Technologies and Micro Systems, Robert Bosch GmbH, Renningen, Germany, Germany) Gaudenzio Meneghesso (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Enrico Zanoni (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Matteo Meneghini (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy)
OFF-state Breakdown and Threshold Voltage Stability of Vertical GaN-on-Si Trench MOSFETs (abstract)
15:00
Anton Marco Hofer (TU Wien, Infineon Technologies Austria AG, Austria) Christian Koller (Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach, Austria, Austria) Nicola Modolo (Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach, Austria, Austria) Dionyz Pogany (TU Wien, Gusshausstrasse 25, 1040 Vienna, Austria, Austria) Clemens Ostermaier (Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach, Austria, Austria)
Improved CV characterization technique for interface state evaluation in Si3N4/n-GaN MIS Capacitors (abstract)
Riccardo Fraccaroli (Department of Information Engineering, University of Padova, 35131, Padova (PD), Italy, Italy) Manuel Fregolent (Department of Information Engineering, University of Padova, 35131, Padova (PD), Italy, Italy) Mirco Boito (Department of Information Engineering, University of Padova, 35131, Padova (PD), Italy, Italy) Carlo De Santi (Department of Information Engineering, University of Padova, 35131, Padova (PD), Italy, Italy) Eleonora Canato (STMicroelectronics, 20864, Agrate Brianza (MB), Italy, Italy) Isabella Rossetto (STMicroelectronics, 20864, Agrate Brianza (MB), Italy, Italy) Maria Eloisa Castagna (STMicroelectronics, 95121, Catania (CT), Italy, Italy) Ferdinando Iucolano (STMicroelectronics, 95121, Catania (CT), Italy, Italy) Cristina Miccoli (STMicroelectronics, 95121, Catania (CT), Italy, Italy) Alfio Russo (STMicroelectronics, 95121, Catania (CT), Italy, Italy) Giansalvo Pizzo (STMicroelectronics, 20007, Cornaredo (MI), Italy, Italy) Gaudenzio Meneghesso (Department of Information Engineering, University of Padova, 35131, Padova (PD), Italy, Italy) Enrico Zanoni (Department of Information Engineering, University of Padova, 35131, Padova (PD), Italy, Italy) Matteo Meneghini (Department of Information Engineering, University of Padova, 35131, Padova (PD), Italy, Italy)
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: from dielectric failure to subthreshold current increase (abstract)
16:00
Alberto Marcuzzi (Department of Information Engineering, University of Padova, Italy) Marina Avramenko (onsemi, Belgium, Belgium) Carlo De Santi (Department of Information Engineering, University of Padova, Italy) Peter Moens (onsemi, Belgium, Belgium) Gaudenzio Meneghesso (Department of Information Engineering, University of Padova, Italy) Enrico Zanoni (Department of Information Engineering, University of Padova, Italy) Matteo Meneghini (Department of Information Engineering, University of Padova,, Italy)
Interface-related VTH Shift of SiC MOSFETs during Constant Current Stress extracted from Charge Pumping measurements (abstract)
16:20
Dong Xie (Chair of Power Electronics, Chemnitz University of Technology, Germany) Patrick Heimler (Chair of Power Electronics, Chemnitz University of Technology, Germany) Roman Boldyrjew-Mast (Chair of Power Electronics, Chemnitz University of Technology, Germany) Mohamed Alaluss (Chair of Power Electronics, Chemnitz University of Technology, Germany) Sven Thiele (Chair of Power Electronics, Chemnitz University of Technology, Germany) Josef Lutz (Chair of Power Electronics, Chemnitz University of Technology, Germany) Thomas Basler (Chair of Power Electronics, Chemnitz University of Technology, Germany)
Threshold Voltage Hysteresis Investigation of SiC MOSFETs with Different Structures under Various Measurement Conditions (abstract)
(Invited) Virtual prototyping in power electronics: the role of simulation in developing reliable products
09:00
Falk Naumann (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany) Michél Simon-Najasek (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany) Bernd Wiesenberger (TDK-Micronas GmbH, Germany) Achim Lindner (TDK-Micronas GmbH, Germany) Frank Altmann (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany)
Numerical study of critical filler particle to chip interaction on an automotive Hall sensor (abstract)
09:20
Yehri Kim (Korea Institute of Industrial Technology (KITECH), South Korea) Eunjin Jo (Korea Institute of Industrial Technology (KITECH), South Korea) Byeong Kwon Ju (Korea University, South Korea) Yoongul Lee (SP semiconductor, South Korea) Jaeup Kim (SP semiconductor, South Korea) Kijoon Ahn (SP semiconductor, South Korea) Seungjun Noh (Hyundai Mobis, Co., Ltd., South Korea) Dongjin Kim (Korea Institute of Industrial Technology (KITECH), South Korea)
Risk of CuxO phase penetration between the Ag plating layer and Cu during high-temperature reliability testing of interfaces bonded to cold sintered Ag nano-porous sheets on direct Ag-plated Cu substrates (abstract)
Evaluation and thermal ageing of power semiconductor die attachment based on porous film electrodeposition (abstract)
10:00
Dajung Kim (Korea Electronics Technology Institute, South Korea) Mi So Won (Korea Electronics Technology Institute (KETI), South Korea) Hyunseung Yang (Korea Electronics Technology Institute (KETI), South Korea) Chulmin Oh (Korea Electronics Technology Institute (KETI), South Korea)
Enhancing Long-Term Thermal Reliability of Sintered Joints through the Use of Silver-Coated Copper Particles (abstract)
(Invited) LED Reliability for Lighting Applications and Beyond
09:00
Marco Nicoletto (Department of Information Engineering-University of Padova (UNIPD), Italy) Alessandro Caria (Department of Information Engineering-University of Padova (UNIPD), Italy) Nicola Roccato (Department of Information Engineering-University of Padova (UNIPD), Italy) Carlo De Santi (Department of Information Engineering-University of Padova (UNIPD), Italy) Matteo Buffolo (Department of Information Engineering-University of Padova (UNIPD), Italy) Gaudenzio Meneghesso (Department of Information Engineering-University of Padova (UNIPD), Italy) Enrico Zanoni (Department of Information Engineering-University of Padova (UNIPD), Italy) Matteo Meneghini (Department of Information Engineering-University of Padova (UNIPD), Italy)
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress (abstract)
09:20
Claudia Casu (Dept. of Information Engineering, University of Padova, Italy) Matteo Buffolo (Dept. of Information Engineering, University of Padova, Italy) Alessandro Caria (Dept. of Information Engineering, University of Padova, Italy) Carlo De Santi (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Nicola Trivellin (Department of Industrial Engineering, University of Padova, Italy) Stefano Rampino (CNR-IMEM Parma, Italy) Matteo Bronzoni (CNR-IMEM Parma, Italy) Massimo Mazzer (CNR-IMEM, Italy) Gaudenzio Meneghesso (Dept. of Information Engineering, University of Padova, Italy) Enrico Zanoni (Dept. of Information Engineering, University of Padova & National Interuniversity Consortium for Nanoelectronics, Italy, Italy) Matteo Meneghini (Dept. of Information Engineering, University of Padova, Dept. of Physics and Astronomy, University of Padova, Italy)
Evidence for Optically-Induced Degradation in CIGS Solar Cells (abstract)
About the influence of temperature operation and packaging stress on the threshold for catastrophic optical damage in laser diodes (abstract)
10:00
Heewon Bang (Yonsei University, South Korea) Yunseok Han (Yonsei University, South Korea) Sunho Kim (Wooriro Co., South Korea) Ilgu Yun (Yonsei University, South Korea)
Degradation Modeling of InGaAs/InP Avalanche Photodiodes using Calibrated Technology Computer-aided Design (abstract)
Paul-Etienne Vidal (Laboratoire Génie de Production - Université de Technologie de Tarbes - Toulouse University, France) Stéphane Baffreau (Laboratoire Génie de Production - Université de Technologie de Tarbes - Toulouse University, France) Guillaume Viné (Laboratoire Génie de Production - Université de Technologie de Tarbes - Toulouse University, France) Anusha Gopishetti (Deep Concept, France) Than-Long Le (Safran, France)
Wire bonding failure characterization of an IGBT based power module through impedance analysis (abstract)
11:00
Rasched Sankari (Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Germany - Technical University Berlin, Germany, Germany) Ulrich Keßler (Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Germany, Germany) Martin Rittner (Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Germany, Germany) Borja Kilian (Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Germany, Germany) Youssef Maniar (Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Germany, Germany) Olaf Wittler (Fraunhofer-Institute for Reliability and Microintegration IZM, Germany, Germany) Martin Schneider-Ramelow (Technical University Berlin, Germany - Fraunhofer-Institute for Reliability and Microintegration IZM, Germany, Germany)
Degradation mode analysis of Cu bond wires on Cu plated SiC power semiconductors stressed by active power cycling (abstract)
Thermal ageing monitoring in Cu-Al intermetallic joints through electrical resistance drift: comparative study of lifetime potential in pure and alloyed copper wires (abstract)
11:40
Bernhard Czerny (University of Applied Sciences Burgenland, Austria) Golta Khatibi (Institute of Chemical Technologies and Analytics, TU Wien, Austria) He Du (Kyushu Institute of Technology, Japan) Francesco Iannuzzo (Department of Energy Technology, Denmark)
Lifetime model for wire bond degradation in power semiconductors based on accelerated mechanical testing and power cycling (abstract)
Crack propagation in ultrasonic-bonded copper wires investigated by power cycling and accelerated mechanical fatigue interconnection test methods (abstract)
