Program for Tuesday, September 24th: Talk View

PROGRAM FOR TUESDAY, SEPTEMBER 24TH: TALK VIEW

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View: with abstracts session overview

8:30

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

08:20-09:00

(Keynote) Battery Diagnostics and Virtual Sensors in Ferrari

Giorgio Gullone

09:00-09:40

(Keynote) An approach to Electronic Platform Complexity: the System Integration in Lamborghini

Luca Zacheo

10:00-10:20

Design-of-Experiments and ALT plan for reliability qualification of chip resistors based on mission profile of

Fatima-Ezahra Indmeskine, Laurent Saintis, Abdessamad Kobi, Hélène Marceau

10:20-10:40

Reliability Assurance in Foldable Displays: Design of Experiment-Based Testing Strategy for Market-Ready

Ui Hyo Jeong, Seongyong Lim, Seung Su Han

10:40-11:00

New statistical analysis methodology to forecast the memory cell behavior before reliability test

Perrin, Della Marca, Kempf, Bocquet, Welter, Moragues, Regnier, Portal

11:00-11:20

Condition Monitoring for Detection of Humidity-Induced Failures in Control Electronics of Power

Frederic Sehr, Stefan Wagner, Adelja Schulz, Alexander Vorwerk

10:00-10:20

Reliability analysis of high power LEDs for automotive: impact of current and temperature

Caria et.al

10:20-10:40

Aging modelling of Li-Ion Battery Systems based on accelerated tests

Toscani, Stighezza, Simonazzi, Delmonte, Cova, Bianchi, Demunari

10:40-11:00

Development challenges of a one-sided GaN-based high-current density buck converter through multiphysics optimization for electric vehicle

Mohamed Belguith, Sonia Eloued, Moncef Kadi, Jaleleddine Ben Hadj Slama

11:00-11:20

Performance characterization of lithium-ion battery and ageing under constant stress conditions at low

Ossama Rafik, Jean-Michel Vinassa, Olivier Briat, Armande Capitaine

11:20-11:40

SMART Protection Design of Automotive Power Distribution Systems with Temperature-Based Electronic Fuses: Mathematical Background, Design Guidelines and Drawbacks of Energy-Based

Mirko Bernardoni, Robert Illing, Mario Tripolt, Christian Djelassi-Tscheck

12:00-14:00

Degradation model for insulation characteristics of tantalum capacitors related to manufacturing parameters and

Xue Zhou, Mingxu Zhang, Donghui Li, Chensong Ji, Le Xu, Guofu Zhai

Research on The Degradation of Contact Resistance of Wire-Spring Contacts in Different Wear

Le Xu, Yuyao Zhao, Shujuan Wang

Reliability Design of GaN Based High-frequency Inverter Optimization

Ya Jing Zhang, Xin Yu Ao, Hong Li, Xiu Teng Wang

Correlating time and voltage laws in BTI

Joseph Bernstein, Alain Bensoussan, Emmanuel Bender, Tsuriel Abraham

Evidence of resistive switching in SiNx thin films for MEMS capacitors: the role of metal contacts

John Theocharis, Spiros Gardelis, George Papaioannou

Recovery and Unrecovered Damage During Interrupted CVS in MFIS FE devices

Tiang Teck Tan, Tian-Li Wu, Kalya Shubhakar, Nagarajan Raghavan, Kin Leong Pey

HTRB effects on threshold instability of 4H-SiC PowerMOSFET with carrots defects

L. Anoldo, G. Tosto, S. Bevilacqua, E. Schroer, F. Patanè, S. Patanè, A. Russo

Thermal layout optimization of electrolytic capacitors considering degradation self-acceleration effect for reliability

Xuerong Ye, Qisen Sun, Ruyue Zhang, Junpeng Gao, Haodong Wang, Guofu Zhai

Semi-supervised parameter estimation for Synthetic Aperture Focusing in Scanning Acoustic Microscopy for a 3D reconstruction of plastic molded electronic

Wolf, Hoffrogge, Wiedenmann, Oberhoff, Kupsch, Krinke, Czurratis

Reliability detection and analysis of elliptical holes corresponding to defects in electrothermal

He Zhang, Li Wang, Jiwen Cui

On the influence of the porosity and homogeneity of sintered die-attach layers on the power cycling

Lukas Mikutta, Frederik Otto, Jörg Schadewald

Aging impact of the SiC Mosfet gate dielectric

Tanguy Phulpin, Alexandre Jaffré, Pascal Chrétien, David Alamarguy

Failure mode competition and long-term reliability in the isothermal aging of sintered Cu joints

J. Xin, X. Lv, Y. Gao, L. Yang, S. Liu, K. Li, M. Zhou, W. Cai, J. Zhang, Y. Liu

Investigating the thermal degradation trends for thermal interface materials in the power converter

Ziheng Wang, Yi Zhang, Huai Wang

PBO Delamination and RDL Corrosion detection on WLCSP Package Products

K. Bidaj, Y. Chen, J. Chang, O. Atance-Loustaunau, F. Braud, M. Medda

Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching

Angelo Antonio Merassi, Tommaso Melis

Multi-sensor Data Fusion for Prediction of Remaining Useful Life of IGBT Power Modules

M. Votava, K. Debbadi, G. Mondal, S. Nielebock, Y. Pascal, M. Liserre

Effect of Drain Field Plate design and 2DEG density on Dynamic-RON of 650V AlGaN/GaN HEMTs

Cioni et.al

Evolution analysis of mechanical behavior of through‑silicon via under thermal cycling load

Kaihong Hou, Zhengwei Fan, Xun Chen, Shufeng Zhang, Yashun Wang, Yu Jiang

Long-Term Positive and Negative Gate Bias Stress Tests on Parallel Connected SiC MOSFETs at -40°C and

A. Deb, M.T.E. Abdelkader, J. Ortiz Gonzalez, P. Mawby, S. Jahdi, O. Alatise

Single Event Irradiation Damage Effect of SiC MOSFETs Based on Degradation of Forward Conduction

Li, Zhen, Li, Yang, Zhang, Zhang, Wang, Sun, Yu, Wang

Stress comparison of several short-circuit types on SiC MOSFET packaging

B. Yu, X. Shi, H. Gao, H. Luo, W. Wang, F. Iannuzzo, W. Li

Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes

Frédéric Richardeau, Lucien Ghizzo, David Tremouilles, Sébastien Vinnac

Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D

Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau

Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate

Longato et.al

Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs

Zhao, Liu, Yan, Hu, Li, Chen, Zhai, Zhang, Cai, Jiao, Sun, Liu

Physics informed Markov chains for remaining useful life prediction of wire bonds in power electronic

Mehdi Ghrabli, Mounira Bouarroudj, Ludovic Chamoin, Emanuel Aldea

Remaining Useful Life Prediction of DC Contactor Based on LSTM

Yu Wang, Yong Xie, Huimin Liang, Hangyu Ma

Investigation of the long-term dynamic Rds(ON) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress

F. Rauf, M.F. Tayyab, S. Mouhoubi, M. Heldwein, G. Curatola

Creep tester for quality assessment of solder joints using normal and thermal stress

Jae-Seong Jeong

Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally

Y.-C. Kim, D.-Y. Yu, S.-i. Kim, Y.-M. Kim, D. Byun, J. Bang, D. Kim

Online Junction Temperature Monitoring of SiC MOSFET Based On The Maximum Drain Current Change Rate During The Process of

Hong Li, Yixiang Zhao, Xiaofei Hu, Qinghao Zhang

Efficient Long-term Reliability Assessment of Planar InGaAs/InP Avalanche Photodiodes using Accelerated Step-Stress

Yunseok Han, Sunho Kim, Ilgu Yun

Active Gate Driver for Current Overshoot Suppression of SiC+Si Hybrid Switches with Dynamic gate Current

Ping Liu, Yongjie Liu, Qi Cao, Biao Xiao, Chunming Tu

Optimized Semi-Physical EKV Model for Simulation of SiC MOSFETs

B.D.R. Bonkoungou, R. Gwoziecki, G. Perez, L. Sterna, Z. Khatir

A study of UIS ruggedness of mismatched paralleled SiC MOSFETs

C. Scognamillo, A.P. Catalano, L. Codecasa, A. Castellazzi, V. D'Alessandro

The Use of Filtered High-Energy X-rays and 60Co for TID Testing of a 32-Bit 28nm FDSOI DSP

Urena-Acuna, Favrichon, Ballier, Robin, Gironés, Maraine, Saigné, Boch

Comprehensive LED Reliability Assessment through Integrated Real-Time Visualization, Electrical, and Optical

H.T. Tan, W.A. Sasangka, Y. Gao, K.E.K. Lee, C.V. Thompson, C.L. Gan

Machine learning classification for failure analysis of smart spark plugs

M.L. Hoang, S. Daniele, N. Delmonte, M. Dal Re, P. Cova, D. Santoro

Issues of electronic devices in hostile environment

V. Trabattoni, A. Andreani, M. Lazzaroni, A. Riminucci, D. Santoro, A. Zani

Methodology to estimate the impact of Single Event Transients in Logic

Joshi et.al

14:00-16:00 Session WS WBG

14:20-14:40

Lifetime prediction for power modules in wind-energy converters based on temperature variations in a large area substrate solder

N. Zöllner, O. Schilling, D. Übelacker, H.-G. Eckel, T. Heise

14:40-15:00

On the Validity of Rainflow Counting-Based Lifetime Assessment for Power Electronics Assembly

Dawei Zhao, Sebastian Letz, Jürgen Leib, Bernd Eckardt

15:00-15:20

Reliability Prediction of Electronic Components based on Physical of Failure with Manufacturing Parameters

Zijian Guo, Hao Chen, Yifan Hu, Xuerong Ye

15:20-15:40

Reliability prediction of multi-level power supply system based on failure precursor parameters

Weiming Liu, Cen Chen, Wei Zheng, Mingtao Feng, Xuerong Ye, Guofu Zhai

15:40-16:00

A New Methodology of Modeling Conducted Emission Behavioural in System-in-Packages (SiP)

Yifei Zheng, Jianfei Wu, Yanfang Lu, Yang Li, Hongli Zhang, Peiguo Liu

14:20-14:40

Series AC Arc Fault Diagnosis Method Based on Spectrogram and Deep Residual Network

Wenxin Dai, Xue Zhou, Zhigang Sun, Guofu Zhai

14:40-15:00

Condition Monitoring of a DC-Link Capacitor in an Inverter with a front-end diode rectifier under Imbalanced Three-phase Supply

Takuma Yamasoto, Kazunori Hasegawa

15:00-15:20

Analysis and experimental verification of current sharing among parallel-connected dc-link capacitors in a fast-switching

Kazunori Hasegawa, Sakurako Nasu

15:20-15:40

Conducted EMI Assessment of Aging Power Si-MOSFET in 3 phase inverter

M. Tlig, B. Zitouna, M. Hammouda, J. Ben Hadj Slama, M. Kadi

15:40-16:00

High AC load current testing method for power capacitors

Fabian Dresel, Jürgen Leib, Lukas Blamberger, Bernd Eckardt, Martin März

16:20-16:40

Reliability and Failure Analysis of AlGaN/GaN HEMT with NiPtAu and PtAu Gate

Dammann et.al

16:40-17:00

Study of Trapping Mechanisms Affecting AlGaN/GaN HEMTs adopting AlGaN Back-Barriers with Different Aluminum

Carlotto et.al

17:00-17:20

Nonlinear modelling of AlN/GaN HEMT accounting for Self-biasing effect during RF step stress: analysis and

Said, Saugnon, Harrouche, Medjdoub, Labat, Malbert, Tartarin

17:20-17:40

DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate

T. Pallaro, T. Dubois, M. De Matos, C. Chang, N. Labat, B. Lambert, N. Malbert

16:20-18:30 Session WS Automotive

09:40-10:00 Coffee Break

12:00-13:00 Lunch

16:00-16:20 Coffee Break