TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
| - | |
| - Cryogenic temperature | |
| - Hostile Environment | |
| - Reliability | |
| 1 | |
| 1S1R | |
| 2 | |
| 2-DEG | |
| 2D dopant characterization | |
| 2DEG pinch-off | |
| 3 | |
| 3D integration | |
| 3D reconstruction | |
| 3D X-ray | |
| 3D-MIM capacitors | |
| 4 | |
| 4H-SiC MOSFETs | |
| 6 | |
| 60Co gamma rays source | |
| A | |
| a stability analysis method based on time domain | |
| AC Stress | |
| AC-DC flyback converter | |
| Accelerated Aging | |
| Accelerated aging tests | |
| Accelerated degradation test | |
| Accelerated Life Tests | |
| Accelerated mechanical fatigue interconnection test | |
| Accelerated step-stress test | |
| accelerated testing | |
| Active Balancing | |
| Active Gate Driver | |
| Active Implantable Medical Devices | |
| Active Power Cycling | |
| Additive manufacturing | |
| Advanced Methodology | |
| advanced packaging | |
| advanced test strategys | |
| Aero-electrical | |
| AFM resiscope | |
| Ag porous sheet bonding | |
| Ageing indicator | |
| Aging | |
| Aging test | |
| Al2O3 | |
| AlGaN | |
| AlN-AMB | |
| AlN/GaN | |
| Aluminium melting | |
| Artificial intelligence | |
| Assembly and Interconnection Technology | |
| Assembly reliability | |
| Atomic layer deposition | |
| Automotive | |
| Automotive power electronics | |
| Avalanche photodiodes | |
| B | |
| back-barrier | |
| Back-Gate Bias | |
| Batteries | |
| Battery aging | |
| Battery cycling | |
| Battery modelling | |
| BEoL | |
| Bias Temperature Instability | |
| bipolar transistor | |
| Bit flips | |
| Blue laser radiation | |
| Body Bias | |
| Bond Wire Degradation Mode | |
| Breakdown Voltage | |
| BTI | |
| C | |
| Calibration methods | |
| capacitance-voltage | |
| capacitor | |
| capacitor banks | |
| Capacitor Parameter Monitoring | |
| Capacitor Stress Balancing Control | |
| Carrots defect | |
| cascode GaN devices | |
| Cascode GaN HEMT | |
| Catastrophic damage | |
| Cavity temperature | |
| Charge Pumping | |
| Chip | |
| Chip resistors | |
| CIGS Solar Cells | |
| Classification algorithm | |
| Clustering methods | |
| Co-design | |
| cold sinter joining | |
| Collaboration | |
| Collection Efficiency | |
| Color-coded | |
| Compact modeling | |
| compression force | |
| computed tomography | |
| Condition Monitoring | |
| Conducted emission | |
| Constant Current Discharge | |
| Constant Voltage Stress | |
| contact characteristics | |
| Copper Bond Wire | |
| copper film sintering | |
| copper wire | |
| Copper-plated Silicone Carbide | |
| counterfeit electronics | |
| Crack propagation | |
| creep tester | |
| Crossbar array | |
| Crystal plastic finite element method (CPFEM) | |
| CSOP | |
| Cu bonding | |
| Cu oxidation | |
| Cu particle sintering | |
| Current Overshoot Suppression | |
| current sharing | |
| Current Stress | |
| Current-crowding | |
| current-voltage | |
| current-voltage characteristics | |
| CuxO risk | |
| D | |
| Damage modeling | |
| Data fusion | |
| DC contactor | |
| DC stress | |
| DC system | |
| DC-link capacitor | |
| DC-link capacitors | |
| Decoupling capacitors | |
| deep convolutional neural networks | |
| deep-levels | |
| Defect Depth Localization | |
| Defect ellipse holes | |
| Defect Generation | |
| defects | |
| Degradation | |
| Degradation analysis | |
| Degradation and failure | |
| Degradation profile | |
| Degradation-sensitive parameter | |
| Delay control | |
| Design Methodology | |
| Design of Experiments | |
| Detection | |
| Device Degradation Modeling | |
| Device Encapsulation | |
| Device numerical simulation | |
| Device Reliability | |
| DHTOL | |
| Diagnosis | |
| Diagnostic circuit | |
| die attach | |
| Dielectric film | |
| dielectric films | |
| diffusion | |
| Digital twin | |
| diode rectifier | |
| Direct liquid cooling | |
| discrete device | |
| Discrete Devices | |
| Dose | |
| double sided cooled modules | |
| DPI | |
| Dynamic Rdson | |
| Dynamic Reverse Bias | |
| Dynamic Ron | |
| dynamic-RON | |
| E | |
| EBAC | |
| EBIC | |
| EBIRCH | |
| EBSD | |
| Elasto-plasticity modeling | |
| electrical characterization | |
| electrical connectors | |
| Electrical Degradation | |
| Electro-thermal modeling | |
| Electrochemical Migration | |
| electrodeposition | |
| Electroluminescence | |
| Electrolytic capacitor | |
| Electromigration | |
| Electronic fuses | |
| Electronic system | |
| electronics inspection | |
| Electrothermal effects | |
| Electrothermal simulation | |
| elevated temperature | |
| EMI | |
| Energy | |
| Epitaxial layer damage | |
| Epitaxy | |
| Equipment | |
| ESD | |
| ESREF | |
| Extraction Efficiency | |
| F | |
| Fabrication technology | |
| failure | |
| Failure Analysis | |
| Failure diagnostic | |
| Failure indicator | |
| Failure investigation | |
| Failure Isolation | |
| failure mechanism | |
| Failure mechanisms | |
| Failure mode | |
| Failure mode competition | |
| failure model | |
| Failure Physics | |
| Failure probability | |
| Failure-mode | |
| fake electronics | |
| fast switching | |
| Fatigue | |
| fatigue life | |
| fault detection | |
| Fault localization | |
| Fault simulation and injection | |
| FDSOI | |
| FE simulation | |
| FEA | |
| FEM simulations | |
| Ferroelectric | |
| FIB | |
| Field-Plate | |
| Filler Particle | |
| FinFET | |
| FinFET Technology | |
| Finite Element Analysis | |
| finite element simulation | |
| Fitting algorithm | |
| Flip-flop retention | |
| Floquet theory | |
| Focused Ion Beam | |
| foldable displays | |
| Front-side ageing | |
| fuzz button contacts | |
| G | |
| Ga2O3 | |
| Gallium Nitride | |
| Galvanic Isolators | |
| GaN | |
| GaN HEMT | |
| GaN HEMTs | |
| GaN-HEMTs | |
| Gate lifetime | |
| Gate overshoot | |
| Gate oxide degradation | |
| Gate-crack modeling | |
| gate-leakage | |
| Gate-oxide degradation | |
| GDSII | |
| Geometric parameters | |
| Global Fault Isolation | |
| Grain boundary | |
| H | |
| Hailstorms Damage | |
| Hard switching | |
| Hardened structure | |
| HBM | |
| HCD | |
| HCI | |
| heat | |
| Heat dissipation | |
| Heatsink optimization | |
| heavy ion | |
| Heavy ion irradiation | |
| HEMT | |
| High accuracy sensor | |
| high bandwidth memory | |
| High Humidity High Temperature Reverse Bias | |
| high power | |
| high temperature application | |
| High Temperature Storage | |
| High Voltage application | |
| high-current-density | |
| High-energy X-rays | |
| holding voltage | |
| hole injection | |
| hot electron effect | |
| HTGB | |
| HTRB stress | |
| Humidity Reliability | |
| HVRB | |
| Hybrid Switches | |
| Hybrid thermal and electrical stresses | |
| H³TRB | |
| I | |
| IGBT | |
| IGBT power module | |
| imbalanced supply voltage | |
| IMD Fracture | |
| impact ionization | |
| impedance analysis | |
| In-situ microscopic imaging | |
| Increase | |
| Independent PV-Storage DC Microgrid | |
| Infrared Radiation | |
| InGaN | |
| Integrated analysis methodology | |
| Intelligent power distribution | |
| Interconnect | |
| interface | |
| interface degradation | |
| interface Si02-SiC | |
| intermetallic compounds | |
| Internal activity | |
| inverter | |
| J | |
| JEDEC | |
| Junction temperature monitoring Measurement | |
| L | |
| large area connection | |
| Laser | |
| Laser diodes | |
| Laser voltage probing | |
| Latent damages | |
| Lateral crack | |
| lead forming | |
| Leakage current | |
| LED | |
| LED failure mechanisms | |
| LED reliability testing | |
| Life model | |
| lifetime | |
| lifetime assessment | |
| lifetime model | |
| lifetime modelling and estimation | |
| Light-induced defects | |
| Lighting Applications | |
| LISN | |
| LIT | |
| Lithium plating | |
| Lithium-Ion battery | |
| load current | |
| Load sequence | |
| Load-pull | |
| Local thermal runaway | |
| Lock-in Thermography | |
| Long Short Term Memory | |
| long-term degradation | |
| Long-term reliability | |
| Low-voltage power device | |
| LSTM | |
| M | |
| Machine learning | |
| Manufacturing Parameters | |
| Markov chain | |
| Masking Effects | |
| MBU | |
| Mechanical stress | |
| MEMS | |
| MEMS gyroscopes | |
| Metal insulator metal (MIM) | |
| Micro electro mechanical systems (MEMS) | |
| micro-raman | |
| Microstructural evolution | |
| Microstructure | |
| MIM electrical properties | |
| Minority carrier injection | |
| MIS capacitor | |
| MIS-HEMT | |
| Mission profile | |
| Model | |
| Modeling | |
| Modular Multilevel Converter (MMC) | |
| mold compound | |
| Molding | |
| Monte Carlo | |
| MOSFET | |
| MOSFET SiC | |
| N | |
| nanoprobing | |
| Nanoscale Devices | |
| natural length | |
| NBT stress | |
| Near field Synthetic Aperture Focusing Technique (SAFT) | |
| Negative activation energy | |
| Neural Network | |
| non-destructive detection | |
| Non-Evaporated Getter (NEG) | |
| Non-linear measurements | |
| Non-volatile memories | |
| Nonlinear capacitances | |
| nonlinear model | |
| normal stress | |
| NTC thermistor | |
| O | |
| OBIRCh | |
| OFF state stress | |
| OFF-state breakdown | |
| Off-state leakage | |
| Ohmic Gate Device | |
| On resistance degradation | |
| On-Orbit | |
| One-diode model | |
| one-sided | |
| Open Circuit Voltage | |
| Opening | |
| outdoor lighting | |
| Over Current | |
| overshoots | |
| Ovonic Threshold Switching | |
| oxidation | |
| P | |
| p-GaN gate | |
| p-GaN gate HEMTs | |
| p-GaN HEMT | |
| Packaging | |
| packaging reliability | |
| Packaging stress | |
| parallel connection | |
| Paralleled devices reliability | |
| Parameter extraction | |
| Parasitic NPN transistor | |
| Paris' law | |
| Passivation | |
| Passives | |
| PBO Delamination | |
| PCB Rogowski sensor | |
| PCC wire | |
| performance degradation | |
| Phase Change Memory | |
| Photo Emission | |
| Photovoltaics | |
| Photovoltaics Modules | |
| Physic of failure | |
| Physical Assurance | |
| Physical of Failure | |
| Physics of failure | |
| Physics-informed machine learning | |
| pitting corrosion | |
| Planar and trench structures | |
| Planar diode | |
| plastic molded electronic devices | |
| pMOSFET | |
| PNP | |
| PoF | |
| Porosity | |
| power converters | |
| Power cycle degradation | |
| Power cycle test | |
| power cycling | |
| power cycling reliability | |
| power cycling test | |
| Power devices | |
| Power diodes | |
| power electronic modules | |
| Power electronics | |
| power eletronics | |
| Power Module | |
| Power module integrated cooler | |
| Power modules | |
| power modules in wind-energy applications | |
| Power SiC MOSFETs | |
| Powercycling | |
| PowerMOSFET | |
| Preprocessor | |
| Press-pack | |
| Principal component Analysis | |
| Printed Circuit Boards (PCB) | |
| Prognostics | |
| Pulse Current Discharge | |
| Q | |
| Qualification | |
| quality assessment | |
| Quasi-static undesired switching | |
| R | |
| Radiation | |
| radiation failure | |
| Radiation Impact on Logic | |
| rainflow counting | |
| RDL Corrosion | |
| Rdson | |
| Reading reliability | |
| Reconfigurable FET | |
| Reliability | |
| reliability analysis | |
| reliability engineering | |
| Reliability improvement | |
| Reliability of memory array | |
| Reliability Prediction | |
| Reliability testing | |
| Remaining useful life | |
| Remaining Useful Life Prediction | |
| Remaining useful lifetime | |
| Repetitive hard-switching | |
| repetitive short circuits | |
| Residual Gas Analysis | |
| Resistive switching | |
| Reverse engineering | |
| RF characterization | |
| RF-Robustness | |
| ringings | |
| RISC-V | |
| Robustness | |
| S | |
| S/D Implant Tilt Angle | |
| Safe Operating Area | |
| Sample preparation | |
| SB-MISFET | |
| Scanning Acoustic Microscopy (SAM) | |
| Scanning probe microscopy | |
| Scanning resistance profiling | |
| Scanning spreading resistance microscopy | |
| Schottky | |
| Schottky gate device | |
| Schottky-type p-GaN | |
| SCR-LDMOS | |
| Screening | |
| Self-acceleration effect | |
| self-biasing | |
| Self-heating | |
| semi-supervised parameter estimation | |
| Sensors | |
| series ac arc fault | |
| SEU | |
| Short circuit | |
| Short Circuit Current | |
| Short-circuit | |
| short-circuit test | |
| Si3N4-AMB | |
| SiC devices | |
| SiC MOSFET | |
| SiC MOSFET modeling | |
| SiC MOSFETs | |
| SiC MPS diode | |
| SiC power device | |
| SiC power devices | |
| SiC power MOSFETs | |
| SiC-MOSFET | |
| Silicon | |
| Silicon Carbide | |
| Silicon carbide metal oxide semiconductor field effect transistor (MOSFET) | |
| silicone degradation | |
| silver coated copper particles | |
| Silver sintering | |
| Simulation | |
| single event burnout | |
| Single Event Transients | |
| Single Event Upsets | |
| Single-event burnout (SEB) | |
| single-event effect | |
| Single-Event Upset (SEU) | |
| Sintered silver | |
| sintering paste | |
| SiON | |
| SIP | |
| Slew Rate | |
| Smart spark plugs | |
| Snapback | |
| Soft switching | |
| Soft-switching | |
| Solar Cells | |
| solder joint | |
| Solder Stop Reliability | |
| solid state lighting | |
| solid-state power controller | |
| Sorption Characterization | |
| Space | |
| Space Applications | |
| Spacecraft sensor | |
| spectrogram | |
| Spectrunm | |
| SPICE compact modeling | |
| Split gate | |
| SRAM | |
| stability | |
| Stacked Devices | |
| State of health | |
| step stress | |
| sub-micron resolution | |
| substrate solder degradation | |
| sulfur induced corrosion | |
| Surface Insulation Resistance | |
| Surface potential decay | |
| Surge current | |
| Surge current (IFSM) | |
| Surge current imbalance | |
| Surrogate model | |
| Switching locus | |
| Switching loss | |
| System in Package | |
| System integration | |
| System-in-Package | |
| T | |
| Tantalum capacitor | |
| TCAD | |
| TCAD simulation | |
| TDDB | |
| Technology Computer-aided Design | |
| Temperature | |
| Temperature distribution | |
| Temperature-sensitive electrical parameters | |
| Temporal depedency model | |
| Test Vehicle | |
| testing method | |
| The maximum value of the rate of change of the drain current during the process of opening | |
| thermal ageing | |
| Thermal cyclic loading | |
| Thermal design optimization | |
| thermal interface materials | |
| Thermal management | |
| Thermal model | |
| thermal modelling | |
| Thermal performance | |
| thermal reliability | |
| Thermal Resistance (junction - case - heat sink) | |
| Thermal shock reliability | |
| Thermal Shock Test | |
| thermal stress | |
| Thermally Stimulated Depolarisation Current | |
| Thermally stimulated depolarization current | |
| Thermomecanical modeling | |
| Threshold instability | |
| Threshold Voltage | |
| Threshold Voltage Degradation | |
| Threshold voltage hysteresis | |
| threshold voltage shift | |
| Through‑silicon via (TSV) | |
| TID | |
| TID testing | |
| Time domain characterization | |
| Time-Dependent Dielectric Breakdown | |
| Time-dependent gate degradation | |
| Total Ionizing Dose | |
| Trap-Assisted Tunneling | |
| trapping | |
| Trench MOSFETs | |
| TSEP | |
| TTF | |
| U | |
| UIS tests | |
| Ultra-Fast recovery transients | |
| Ultrasonic thick copper wires | |
| V | |
| Variability | |
| VDMOS power transistors | |
| Vertical GaN | |
| void coalescence | |
| VTH stability | |
| W | |
| Wafer Lavel Packaging (WLP) | |
| wear | |
| Welcome | |
| Wide Band Gap (WBG) | |
| Wide Band Gap devices | |
| Wide frequency band | |
| wire bond lift-off | |
| wire bonding | |
| wire bonds | |
| WLCSP | |
| X | |
| x-ray imaging | |
| XPS | |
| Y | |
| Yield | |
| Z | |
| ZrAlxOy | |
| Zth-Measurement | |