ICSCRM 2025: THE 22ND INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS
TALK KEYWORD INDEX

This page contains an index consisting of author-provided keywords.

(
(41) Frank-Type Stacking fault
1
100um epitaxy
1200V
1700V
2
2-dimensional hole gas (2DHG)
200mm
200um epitaxy
3
3300V
3C-SiC
3D Simulation
3rd Quadrant
4
4H-SiC
4H-SiC a-Plane
4H-SiC and 3C-SiC
4H-SiC CMOS Technology
4H-SiC Epitaxial Wafer
4H-SiC JBSFET
4H-SiC MOSFET
4H‑SiC
8
8-inch
A
ab initio calculation
ab initio theory
AC BTI
ac C-V characterization
Accumulated Charge
Activated Cu atomic layer
Activation annealing
AFM
all-electrical quantum magnetometry
Aluminum
anisotropy
Ar annealing
asymmetric superjunction
Atomic layer deposition
ATR-FTIR
Auger recombination
Avalanche photodiode
axial divacancy in4H silicon carbide
B
Bar-Shaped Stacking Fault
basal plane dislocation
Basal plane dislocations
basal plane dislocations (BPDs)
Baseless power module
Bathtub Curve
Bayesian inference
bi-directional
bias temperature instability
BiDFET
Bipolar AC gate switching
bipolar degradation
Blocking
Body diode
bound exciton
BPD
BPD pileup
breakdown voltage
bright photon emission
Buffer layer
Bulk
C
C/Si ratio
capacitance transient
Capacitance-voltage
carbon vacancies (Vc)
Carbon vacancy
Carbon-related defect
Carrier lifetime
Carrier recombination
carrier scattering mechanism
Carrier transport
Cgd
channel mobility
Channeled Implantation
Channeling
Characterization conditions
charge pumping
Charge‑balance
Close Space PVT
Close-space sublimation
CMOS
Color Center
Color Centers
commercially-off-the-shelf devices
Computer modeling
Computer simulation
Conduction
Contact Resistance
Cosmic Ray
Cryogenic
Crystal growth
Current Density
current stress
Current-Controlled Negative Resistance (CCNR)
Current-Voltage
CVD
CVD process
D
D-Center
Dark current
Decoupled plasma nitridation
deel level characterization
deep defect
Deep Learning
deep level
deep level transient spectroscopy
defect
defect characterization
Defects
degradation
density of interface states
Depth profiling
Detection limit
detectors
device irradiation
Device reliability
Device Simulation
DFT Calculation
DFT Calculation of Band Offset
DFT Calculation of Band Structure
Dielectric Breakdown
DII center
diode
discretes
Dislocation density
Divacancy
divacancy-related defect
DLTS
DMOSFET
Doped Hafnium Oxide
Doping Dose Window
Doping optimization
doping uniformity
Drift layer
drift velocity
driving force
dual-bias stress
Dynamic AGE-ing process
dynamic losses
E
EBIC
edge termination
Edge Termination Techniques
Electric breakdown
Electrical characterization
electrical conductivity
electrical spin detection
Electrically Detected Magnetic Resonance
Electrically-detected magnetic resonance
electron beam induced current
electron scattering mechanism
electron-phonon coupling
Energy Filtered Ion Implantation
Entangled Photon Source
Epitaxial growth
epitaxial layer
epitaxy
Etch Pit
Etching
EV traction inverters
EV-charging
EVC method
Evolution of properties
Excess carrier injection
expansion by UV irradiation
expansion of SSFs
extended defects
Extrinsic Stacking Fault
F
Ferroelectricity
FiNFET
FinFET effect
First principle calcurations
Fluid flow
Frank type stacking fault
frequency-dependence
G
gamma ray irradiation
Gamma-ray
gate leakage current
Gate Oxide Reliability
Gate Screening
gate stress testing
gate switching instability
gate switching stress
Gate technologies
Gate-stacks for 4H-SiC
Graphene
Grinding
Growth interrupts
H
H2 annealing
HAADF HR-STEM
HAADF HS-STEM
Hall measurements
harsh environments
Heat dissipation
heavy-ions
Heteroepitaxy
Heterointerface
High Drain Voltage Bias
high electric field
High Energy
high growth rate
High mobility
High Precision
High Q mechanical resonators
high readout contrast
High Resolution X-ray Topography
High Temperature
High Throughput
High-k Dielectrics
High-κ
highly doping
HRXRD
HTGB
HTRB
HV-H3TRB
Hybrid SiC wafer
Hydrogen detection
I
impact ionization anisotropy
impurity-vacancy complex
in-grown stacking fault
in-situ measurement
in-situ plasma treatment
Integral Diode
interface
interface states
Interface traps
Intrinsic Stacking Fault
Ion Implantation
Island P+ JBSFET
J
JBS
JFET
junction temperature
junction termination extension
K
Kerf Loss
KOH
L
Laplace DLTS
Laser Dicing
Laser slicing
Laser Splitting
Lateral 4H-SiC MOSFET
lateral device
Lateral Ion Straggle
lateral pin-diode
Lateral Straggle
Leakage Current
Life test
Lifetime killer
lifetime modeling
lifetime prediction
Lindblad Equation Simulations
Low angle grain boundary
Low resistivity
Low-energy muon spin spectroscopy
Luminescence
M
machine learning
magnetometer sensitivity
Mass transfer
Mass transport
MCTS
Measurement of mechanical Spectra
measurement technique
Mechanical properties
mechanical stress modeling
Metal-oxide-semiconductor (MOS) capacitor
metastable epitaxy
Micropipe
microstructure
minority charge carrier lifetime
Mo Schottky barrier
mobility
Mobility universality
modified divacancy
MOS
MOS interface
MOS interfaces
MOSFET
Multi-chip power modules
multi-objective optimization
Multi-wafer
N
N+ Source Depth
n-channel
near zero field magnetoresistance
Neural Network
neutron damage
neutron detection
neutron radiation
Nitrogen doping
Nitrogen Implantation
NMOSFET
NO annealing
Noble gas implantation
novel Crystal growth method
O
OBIC (Optical Beam Induced Current) technique
ODMR contrast optimization
On-Resistance–Breakdown Voltage Trade-off
operational amplifier
Optically detected magnetic resonance
oxidation
P
p-channel
P-type 4H-SiC substrate
p-type doping
p-type SiC
packaging
Partial Dislocation
passivation cracks
PDMR
Phosphorous
photocurrent
photocurrent detected magnetic resonance
Photodetector
photoelectrical detection of magnetic resonance
Photoluminescence
photoluminescence spectrum
Photon-assisted electron injection model
photonic
Photonic crystal cavity
Photonics
Physical vapor transport
physical vapor transport growth of SiC
PiN
PL Emission Wavelength
PL imaging
PL Mapping
PL spectra
plasma nitridation
PMOSFET
point defect
Point defects
polycrystalline SiC
Polygon Scanner
polytype stability
post deposition annealing
Post-deposition annealing
Power cycle minutes
Power cycles
power cycling
Power electronics
principal component analysis
Proton implantation
pulsed electron paramagnetic resonance spectroscopy
PVT
PVT method
p–n junction
Q
quantum
quantum application
Quantum Communication and Network
quantum emitter
Quantum network
Quantum networks
Quantum Sensing
qubit
R
Radiation Reliability
Raman spectroscopy
ramp C-V characterization
Reactive Si infiltration
recombination centers
Recovery loss
Reliability
Remote epitaxy
resistance
Reverse recovery
Reverse recovery characteristics
ring-assisted junction termination extension
Ronsp
room temperature
Room temperature bonding
S
Sample Fabrication
SC Thermal-Runaway
SC turn-off
scanning electron microscopy
Scattering mechanisms
Schottky
Schottky Barrier Diode (SBD)
Schottky contact
Schottky Width
screening
Secondary ion mass spectrometry (SIMS)
SEGR
SELC
SEM
semi-superjunction
Semi-Superjunction (SSJ)
Semiconducting materials
Shockley-Read-Hall recombination
Shockley-type stacking fault
Shockley-type stacking faults (SSFs)
Short-Circuit
Short-circuit capability
SiC
SiC bulk growth
SiC crystal growth
SiC epitaxy
SiC liner crucible
SiC macrostep
SiC MOSFET
SiC MOSFETs
SiC on Insulator
SiC PiN diodes
SiC Planar MOSFET
SiC power device
SiC power devices
SiC power MOSFET design
SiC power MOSFETs
SiC superjunction
SiC thin films
SiC trench MOSFETs
SiC-On-Insulator
SiC-on-insulator (SiCOI)
SiC-SiO2 interface
SiC/Cu
SiC/SiO2 interface
SiCOI
signal-to-noise ratio
silicon carbide
Silicon carbide (SiC)
Silicon Carbide Epitaxy
Silicon Vacancy
Silicon-carbide-on-insulator
Simultaneous lateral epitaxy (SLE)
SiN
single defect
single photon emitter
single photon source
single Shockley stacking fault
single spin detection
Single-Event Gate Rupture
SiO2/4H-SiC Interface
SiO2/SiC interface
SiO2/SiC MOS structures
Smart Cut™
SmartSiC
sMIM
SNR
Solution growth
specific on-resistance
Spectral responsivity measurement
spectrum mapping
spin
spin coherent control
Spin defect
Spin lifetime
spin-defect engineering
Spontaneous polarization
SSRM
Stability Analysis
Stacking Fault
Stacking Fault Energy
Stark tuning
Strain
Structural Transformation
substrate
Substrate carrier lifetime
Substrate manufacture
Subsurface Cracks
Subthreshold
Subthreshold swing
Superjunction
Surface
Surface Chemistry
Surface pit
Surface recombination velocity
surface treatment
surfaces and interfaces
Switching
Switching characteristics
switching losses
Switching oscillation mitigation
synchronized readout
Synchrotron X-ray Topography
Synopsis TCAD simulations
T
TCAD
TCAD Simulation
TCAD simulations
temperature dependence
Temperature measurement
The electric field in the gate oxide
Thermal oxidation
Thermal Surface Conditioning
Thermochemical Model
thermodynamics of SiC growth
Threading dislocation
threshold voltage
Threshold voltage drift
Time Dependent Dielectric Breakdown (TDDB)
time-resolved
Time-resolved photoluminescence
Total Ionizing Dose Radiation
Travelling solvent method
Trench
trench filling
Trench Filling Epitaxy
Trench SiC MOSFETs
TSD
TSD conversion
Tunability
U
UHV-SiC MOSFET
Ultra High Voltage
ultra high-voltage
Ultra thick epitaxy
ultra-high power epitaxy
Ultraviolet Detection
ultraviolet emitter
UV detection
V
V2 defect
Vanadium
Vapor pressure
Very Large-Height Stacking Fault
Void-Aware Design
W
Wafer Bonding
Wafer reuse method
Wafer thinning process
Wet Cleaning
X
X-ray Topography
XPS Analysis
Z
Z1/2 center