TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
( | |
(41) Frank-Type Stacking fault | |
1 | |
100um epitaxy | |
1200V | |
1700V | |
2 | |
2-dimensional hole gas (2DHG) | |
200mm | |
200um epitaxy | |
3 | |
3300V | |
3C-SiC | |
3D Simulation | |
3rd Quadrant | |
4 | |
4H-SiC | |
4H-SiC a-Plane | |
4H-SiC and 3C-SiC | |
4H-SiC CMOS Technology | |
4H-SiC Epitaxial Wafer | |
4H-SiC JBSFET | |
4H-SiC MOSFET | |
4H‑SiC | |
8 | |
8-inch | |
A | |
ab initio calculation | |
ab initio theory | |
AC BTI | |
ac C-V characterization | |
Accumulated Charge | |
Activated Cu atomic layer | |
Activation annealing | |
AFM | |
all-electrical quantum magnetometry | |
Aluminum | |
anisotropy | |
Ar annealing | |
asymmetric superjunction | |
Atomic layer deposition | |
ATR-FTIR | |
Auger recombination | |
Avalanche photodiode | |
axial divacancy in4H silicon carbide | |
B | |
Bar-Shaped Stacking Fault | |
basal plane dislocation | |
Basal plane dislocations | |
basal plane dislocations (BPDs) | |
Baseless power module | |
Bathtub Curve | |
Bayesian inference | |
bi-directional | |
bias temperature instability | |
BiDFET | |
Bipolar AC gate switching | |
bipolar degradation | |
Blocking | |
Body diode | |
bound exciton | |
BPD | |
BPD pileup | |
breakdown voltage | |
bright photon emission | |
Buffer layer | |
Bulk | |
C | |
C/Si ratio | |
capacitance transient | |
Capacitance-voltage | |
carbon vacancies (Vc) | |
Carbon vacancy | |
Carbon-related defect | |
Carrier lifetime | |
Carrier recombination | |
carrier scattering mechanism | |
Carrier transport | |
Cgd | |
channel mobility | |
Channeled Implantation | |
Channeling | |
Characterization conditions | |
charge pumping | |
Charge‑balance | |
Close Space PVT | |
Close-space sublimation | |
CMOS | |
Color Center | |
Color Centers | |
commercially-off-the-shelf devices | |
Computer modeling | |
Computer simulation | |
Conduction | |
Contact Resistance | |
Cosmic Ray | |
Cryogenic | |
Crystal growth | |
Current Density | |
current stress | |
Current-Controlled Negative Resistance (CCNR) | |
Current-Voltage | |
CVD | |
CVD process | |
D | |
D-Center | |
Dark current | |
Decoupled plasma nitridation | |
deel level characterization | |
deep defect | |
Deep Learning | |
deep level | |
deep level transient spectroscopy | |
defect | |
defect characterization | |
Defects | |
degradation | |
density of interface states | |
Depth profiling | |
Detection limit | |
detectors | |
device irradiation | |
Device reliability | |
Device Simulation | |
DFT Calculation | |
DFT Calculation of Band Offset | |
DFT Calculation of Band Structure | |
Dielectric Breakdown | |
DII center | |
diode | |
discretes | |
Dislocation density | |
Divacancy | |
divacancy-related defect | |
DLTS | |
DMOSFET | |
Doped Hafnium Oxide | |
Doping Dose Window | |
Doping optimization | |
doping uniformity | |
Drift layer | |
drift velocity | |
driving force | |
dual-bias stress | |
Dynamic AGE-ing process | |
dynamic losses | |
E | |
EBIC | |
edge termination | |
Edge Termination Techniques | |
Electric breakdown | |
Electrical characterization | |
electrical conductivity | |
electrical spin detection | |
Electrically Detected Magnetic Resonance | |
Electrically-detected magnetic resonance | |
electron beam induced current | |
electron scattering mechanism | |
electron-phonon coupling | |
Energy Filtered Ion Implantation | |
Entangled Photon Source | |
Epitaxial growth | |
epitaxial layer | |
epitaxy | |
Etch Pit | |
Etching | |
EV traction inverters | |
EV-charging | |
EVC method | |
Evolution of properties | |
Excess carrier injection | |
expansion by UV irradiation | |
expansion of SSFs | |
extended defects | |
Extrinsic Stacking Fault | |
F | |
Ferroelectricity | |
FiNFET | |
FinFET effect | |
First principle calcurations | |
Fluid flow | |
Frank type stacking fault | |
frequency-dependence | |
G | |
gamma ray irradiation | |
Gamma-ray | |
gate leakage current | |
Gate Oxide Reliability | |
Gate Screening | |
gate stress testing | |
gate switching instability | |
gate switching stress | |
Gate technologies | |
Gate-stacks for 4H-SiC | |
Graphene | |
Grinding | |
Growth interrupts | |
H | |
H2 annealing | |
HAADF HR-STEM | |
HAADF HS-STEM | |
Hall measurements | |
harsh environments | |
Heat dissipation | |
heavy-ions | |
Heteroepitaxy | |
Heterointerface | |
High Drain Voltage Bias | |
high electric field | |
High Energy | |
high growth rate | |
High mobility | |
High Precision | |
High Q mechanical resonators | |
high readout contrast | |
High Resolution X-ray Topography | |
High Temperature | |
High Throughput | |
High-k Dielectrics | |
High-κ | |
highly doping | |
HRXRD | |
HTGB | |
HTRB | |
HV-H3TRB | |
Hybrid SiC wafer | |
Hydrogen detection | |
I | |
impact ionization anisotropy | |
impurity-vacancy complex | |
in-grown stacking fault | |
in-situ measurement | |
in-situ plasma treatment | |
Integral Diode | |
interface | |
interface states | |
Interface traps | |
Intrinsic Stacking Fault | |
Ion Implantation | |
Island P+ JBSFET | |
J | |
JBS | |
JFET | |
junction temperature | |
junction termination extension | |
K | |
Kerf Loss | |
KOH | |
L | |
Laplace DLTS | |
Laser Dicing | |
Laser slicing | |
Laser Splitting | |
Lateral 4H-SiC MOSFET | |
lateral device | |
Lateral Ion Straggle | |
lateral pin-diode | |
Lateral Straggle | |
Leakage Current | |
Life test | |
Lifetime killer | |
lifetime modeling | |
lifetime prediction | |
Lindblad Equation Simulations | |
Low angle grain boundary | |
Low resistivity | |
Low-energy muon spin spectroscopy | |
Luminescence | |
M | |
machine learning | |
magnetometer sensitivity | |
Mass transfer | |
Mass transport | |
MCTS | |
Measurement of mechanical Spectra | |
measurement technique | |
Mechanical properties | |
mechanical stress modeling | |
Metal-oxide-semiconductor (MOS) capacitor | |
metastable epitaxy | |
Micropipe | |
microstructure | |
minority charge carrier lifetime | |
Mo Schottky barrier | |
mobility | |
Mobility universality | |
modified divacancy | |
MOS | |
MOS interface | |
MOS interfaces | |
MOSFET | |
Multi-chip power modules | |
multi-objective optimization | |
Multi-wafer | |
N | |
N+ Source Depth | |
n-channel | |
near zero field magnetoresistance | |
Neural Network | |
neutron damage | |
neutron detection | |
neutron radiation | |
Nitrogen doping | |
Nitrogen Implantation | |
NMOSFET | |
NO annealing | |
Noble gas implantation | |
novel Crystal growth method | |
O | |
OBIC (Optical Beam Induced Current) technique | |
ODMR contrast optimization | |
On-Resistance–Breakdown Voltage Trade-off | |
operational amplifier | |
Optically detected magnetic resonance | |
oxidation | |
P | |
p-channel | |
P-type 4H-SiC substrate | |
p-type doping | |
p-type SiC | |
packaging | |
Partial Dislocation | |
passivation cracks | |
PDMR | |
Phosphorous | |
photocurrent | |
photocurrent detected magnetic resonance | |
Photodetector | |
photoelectrical detection of magnetic resonance | |
Photoluminescence | |
photoluminescence spectrum | |
Photon-assisted electron injection model | |
photonic | |
Photonic crystal cavity | |
Photonics | |
Physical vapor transport | |
physical vapor transport growth of SiC | |
PiN | |
PL Emission Wavelength | |
PL imaging | |
PL Mapping | |
PL spectra | |
plasma nitridation | |
PMOSFET | |
point defect | |
Point defects | |
polycrystalline SiC | |
Polygon Scanner | |
polytype stability | |
post deposition annealing | |
Post-deposition annealing | |
Power cycle minutes | |
Power cycles | |
power cycling | |
Power electronics | |
principal component analysis | |
Proton implantation | |
pulsed electron paramagnetic resonance spectroscopy | |
PVT | |
PVT method | |
p–n junction | |
Q | |
quantum | |
quantum application | |
Quantum Communication and Network | |
quantum emitter | |
Quantum network | |
Quantum networks | |
Quantum Sensing | |
qubit | |
R | |
Radiation Reliability | |
Raman spectroscopy | |
ramp C-V characterization | |
Reactive Si infiltration | |
recombination centers | |
Recovery loss | |
Reliability | |
Remote epitaxy | |
resistance | |
Reverse recovery | |
Reverse recovery characteristics | |
ring-assisted junction termination extension | |
Ronsp | |
room temperature | |
Room temperature bonding | |
S | |
Sample Fabrication | |
SC Thermal-Runaway | |
SC turn-off | |
scanning electron microscopy | |
Scattering mechanisms | |
Schottky | |
Schottky Barrier Diode (SBD) | |
Schottky contact | |
Schottky Width | |
screening | |
Secondary ion mass spectrometry (SIMS) | |
SEGR | |
SELC | |
SEM | |
semi-superjunction | |
Semi-Superjunction (SSJ) | |
Semiconducting materials | |
Shockley-Read-Hall recombination | |
Shockley-type stacking fault | |
Shockley-type stacking faults (SSFs) | |
Short-Circuit | |
Short-circuit capability | |
SiC | |
SiC bulk growth | |
SiC crystal growth | |
SiC epitaxy | |
SiC liner crucible | |
SiC macrostep | |
SiC MOSFET | |
SiC MOSFETs | |
SiC on Insulator | |
SiC PiN diodes | |
SiC Planar MOSFET | |
SiC power device | |
SiC power devices | |
SiC power MOSFET design | |
SiC power MOSFETs | |
SiC superjunction | |
SiC thin films | |
SiC trench MOSFETs | |
SiC-On-Insulator | |
SiC-on-insulator (SiCOI) | |
SiC-SiO2 interface | |
SiC/Cu | |
SiC/SiO2 interface | |
SiCOI | |
signal-to-noise ratio | |
silicon carbide | |
Silicon carbide (SiC) | |
Silicon Carbide Epitaxy | |
Silicon Vacancy | |
Silicon-carbide-on-insulator | |
Simultaneous lateral epitaxy (SLE) | |
SiN | |
single defect | |
single photon emitter | |
single photon source | |
single Shockley stacking fault | |
single spin detection | |
Single-Event Gate Rupture | |
SiO2/4H-SiC Interface | |
SiO2/SiC interface | |
SiO2/SiC MOS structures | |
Smart Cut™ | |
SmartSiC | |
sMIM | |
SNR | |
Solution growth | |
specific on-resistance | |
Spectral responsivity measurement | |
spectrum mapping | |
spin | |
spin coherent control | |
Spin defect | |
Spin lifetime | |
spin-defect engineering | |
Spontaneous polarization | |
SSRM | |
Stability Analysis | |
Stacking Fault | |
Stacking Fault Energy | |
Stark tuning | |
Strain | |
Structural Transformation | |
substrate | |
Substrate carrier lifetime | |
Substrate manufacture | |
Subsurface Cracks | |
Subthreshold | |
Subthreshold swing | |
Superjunction | |
Surface | |
Surface Chemistry | |
Surface pit | |
Surface recombination velocity | |
surface treatment | |
surfaces and interfaces | |
Switching | |
Switching characteristics | |
switching losses | |
Switching oscillation mitigation | |
synchronized readout | |
Synchrotron X-ray Topography | |
Synopsis TCAD simulations | |
T | |
TCAD | |
TCAD Simulation | |
TCAD simulations | |
temperature dependence | |
Temperature measurement | |
The electric field in the gate oxide | |
Thermal oxidation | |
Thermal Surface Conditioning | |
Thermochemical Model | |
thermodynamics of SiC growth | |
Threading dislocation | |
threshold voltage | |
Threshold voltage drift | |
Time Dependent Dielectric Breakdown (TDDB) | |
time-resolved | |
Time-resolved photoluminescence | |
Total Ionizing Dose Radiation | |
Travelling solvent method | |
Trench | |
trench filling | |
Trench Filling Epitaxy | |
Trench SiC MOSFETs | |
TSD | |
TSD conversion | |
Tunability | |
U | |
UHV-SiC MOSFET | |
Ultra High Voltage | |
ultra high-voltage | |
Ultra thick epitaxy | |
ultra-high power epitaxy | |
Ultraviolet Detection | |
ultraviolet emitter | |
UV detection | |
V | |
V2 defect | |
Vanadium | |
Vapor pressure | |
Very Large-Height Stacking Fault | |
Void-Aware Design | |
W | |
Wafer Bonding | |
Wafer reuse method | |
Wafer thinning process | |
Wet Cleaning | |
X | |
X-ray Topography | |
XPS Analysis | |
Z | |
Z1/2 center |