Can resistivity increase with doping? (abstract)

Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications (abstract)

Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs (abstract)

Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates (abstract)

BOX CREEP : A Mechanical Booster for Next-Generation FDSOI (abstract)

Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding (abstract)

Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs (abstract)

Impact of Device Position within the Silicon Active Area on Self-Heating and Thermal Coupling in FD-SOI Transistors (abstract)

Analysis of uncertainties in the Self-Heating Extraction by RF technique in FD-SOI Transistors (abstract)

Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node (abstract)

Implantation- and Bonding-Free Multilayer SOI Fabrication via Annealing–Oxidation (abstract)

Fabrication and characterisation of GeSn devices for quantum applications (abstract)

Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime (abstract)

Demonstration of Trap Recovery by In-Situ Annealing in 28nm FD-SOI MOSFETs at Cryogenic Temperatures (abstract)

Cryogenic DC and Low-Frequency Noise Investigation of Vertical Gate-All-Around Silicon Nanowire pMOSFET Arrays (abstract)

Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation (abstract)

Experimental Demonstration of 2D Core-Shell Junctionless FET (abstract)

In-depth TCAD study of stacked MoS₂ channel FETs based on a channel-last integration (abstract)

Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene (abstract)

DFT based layered dielectric model for MoS2/SiO2 structure (abstract)

Forksheet versus Nanosheet Transistors: A Multi-Dimensional Scaling Comparison of Electrostatic Performance and Thermal Robustness (abstract)

Impact of Forksheet Transistor on Low-Dropout Regulator Performance (abstract)

Real Time Simulations of Advanced MOSFETs (abstract)

Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations (abstract)

Impact of RDF in the channel on the On-current of GAA nanosheet transistors through Monte Carlo simulations (abstract)

Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices (abstract)

Low-temperature dielectric for BEOL integration of Si-based RFETs (abstract)

ITO/TiW Contacts for Transparent FDSOI CMOS (abstract)

Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes (abstract)

Electrostrictive 2D Heterostructures for Steep Slope FET Applications (abstract)

VTH Extraction in VGT-Normalized AlGaN/GaN HEMTs (abstract)

Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures (abstract)

Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon (abstract)

Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions (abstract)

Enhancing High-Temperature Analog Performance of MOSFETs Through a Half-Diamond Layout Hardness-by-Design Approach (abstract)

A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits (abstract)

Co-Integration of Tunnel FET and FinFET for Hybrid LDO Circuit Design (abstract)

Study of Variability in Threshold Voltage Engineering for Nanosheet MOSFETs using TCAD (abstract)

Strategic Stress Engineering in CFETs: Monolithic vs. Sequential (abstract)

Al/SnO2/ITO-Based Memristive Soft-Threshold Neuron (MSTN) for Low-Power Neuromorphic Computing (abstract)

A T-Shaped Nanocavity Junctionless FET for High-Sensitivity Biomolecule Detection in Medical Diagnostics (abstract)

Bias-dependent contact resistance model in Graphene on-Insulator FETs (abstract)

Feasibility Study of a Damage- and Pressure-Free AC Pseudo-MOS Method Using a Mercury Probe (abstract)

Optimization of Hybrid Source and Drain Extension Metal in AlGaN/GaN HEMTs: A Simulation and Experimental Study (abstract)

High-precision Triboelectric Haptic Sensor for IoMT Healthcare (abstract)

Analysis and Optimization of a Planar SOI RFET for Dynamic Reconfigurable Logic (abstract)

Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs (abstract)

Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding (abstract)

Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses (abstract)

Properties of Ru/Hf1-xZrxO2/p-Si MOS Gate Stack Structures Deposited by Pulsed-DC Sputtering Using a Periodic Layer-by-Layer Deposition Process (abstract)

Area-Dependent Switching and Synaptic Behavior in Al/TiOx/TiN devices (abstract)

Mixed Finite Element Method for Quantum Dots Array Simulation (abstract)

Electric Field Control of Metal-to-Semiconductor Transition in BL-PtTe2 (abstract)

Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance Amplifier (abstract)

Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA (abstract)

Origin of ferroelectricity in HfO2/ZrO2 thin films without depolarization (abstract)

Interplay of Hot Carrier Degradation and Device Variability in NSFETs: A TCAD Study (abstract)

Vertical Capacitance and Edge-Field Engineering in 4H-SiC MOS Capacitors (abstract)

Absence of P-doping by Localized Acceptor Polarons in TeO2 Semiconductors (abstract)

Band gap and Defects of AlScN ferroelectrics for BEOL non-volatile memories (abstract)

Electronic Structure of IGZO and its Hydrogen Defects (abstract)

Electronic Structure of W-doped In2O3 BEOL Oxide Semiconductors (abstract)

Temperature Influence on Single Trap Junctionless Nanowire Transistors Low-Frequency Noise (abstract)

Orientation-engineered PtTe2 Schottky FETs for dopant-free advanced technology nodes (abstract)

Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface engineering (abstract)

Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware Security (abstract)

On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work (abstract)

Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes (abstract)

A compact model of perovskite memristors inspired by the Stanford RRAM model (abstract)

DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics (abstract)

SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification (abstract)

Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements (abstract)

Temperature Dependent Carrier Transport Mechanisms in WSe2 (abstract)

Analytical Modeling of Rectifiers for Radio-Frequency Energy Harvesting (abstract)

Impact of neglecting the bias dependence of access resistances on DC and 1/f noise parameter extraction (abstract)

Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight (abstract)

Dielectric BD in FDSOI Transistors: circuital compact model and Impact on digital Circuits (abstract)

Analysis of Self Heating in SiC-6H and Al2O3 Substrate Platforms with SiO2 Buried Oxide Integration on AlGaN HEMT (abstract)

Impact of BOX scaling and ground plane on 1/f noise in FDSOI pMOSFET (abstract)

Optimization of Magnetron-Sputtered Al Thin Films for Controlled Surface Roughness in RRAM Applications (abstract)

Demonstration of the Novel Junctionless Complementary FET (abstract)

Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS Technology (abstract)

Study of the annealing effect on Al2O3-based 1T1R RRAM cell (abstract)

Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of Variation (abstract)

Operation of Junctionless Nanowire Transistors-Based Common Source Current Mirror at Cryogenic Temperatures (abstract)

Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry (abstract)

Interface-Engineered Cryogenic Memristors Enabling Sub-100 μV Scalable Qubit Biasing (abstract)

Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs (abstract)

Improving the conductance ratio of mechanically-exfoliated MoS2 and WS2 based memristors (abstract)

The Ultimate Field Effect Transistor: GAIA MOSFET (abstract)

Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI (abstract)

Split MLP Architectures for Accurate Joint Modeling of drain and gate currents in FD-SOI Transistors (abstract)

From FD-SOI to MoS2 MOSFETs: Coupling Mechanisms (abstract)

Single Trap and Low Frequency 1/f Noise Modeling in MOSFETs with Dirac Materials or 2D Semiconductor Channel (abstract)

Brain-Inspired Computing Enabled by a Universal NbOx Memristor with Multi-Mode Switching (abstract)

Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic (abstract)

Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing (abstract)

Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices (abstract)

Probabilistic bits based on Ag/SiOx/BE threshold switching memristors (abstract)