Talk Author Index

TALK AUTHOR INDEX

Shortcuts: A B C D E F G H I J K L M N O P Q R S T V W X Y Z

A
A. Vaccaro, Diogo	Forksheet versus Nanosheet Transistors: A Multi-Dimensional Scaling Comparison of Electrostatic Performance and Thermal Robustness Impact of Forksheet Transistor on Low-Dropout Regulator Performance
Abadie, Karine	Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding
Aberl, Johannes	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
Acharya, Abhishek	Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Adegoke, Esther	Fabrication and characterisation of GeSn devices for quantum applications
Agopian, Paula Ghedini Der	Co-Integration of Tunnel FET and FinFET for Hybrid LDO Circuit Design Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance Amplifier Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA Impact of Forksheet Transistor on Low-Dropout Regulator Performance
Ahn, Ethan	Electrostrictive 2D Heterostructures for Steep Slope FET Applications High-precision Triboelectric Haptic Sensor for IoMT Healthcare
Al Khatib, Chadi	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Aliouat, Mouaad Yassine	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Allibert, Frederic	Can resistivity increase with doping?
Amat, Esteve	Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes
Anghel, Lorena	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Ansari, Lida	Electric Field Control of Metal-to-Semiconductor Transition in BL-PtTe2 Orientation-engineered PtTe2 Schottky FETs for dopant-free advanced technology nodes Temperature Dependent Carrier Transport Mechanisms in WSe2
Ashai, Aasim	Real Time Simulations of Advanced MOSFETs
Aslam, Zabeada	Temperature Dependent Carrier Transport Mechanisms in WSe2
Attané, Jean Phillipe	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Auf der Maur, Matthias	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Aussenac, François	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Awasthi, Shivangi	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding
B
Badami, Oves	Real Time Simulations of Advanced MOSFETs
Badets, Franck	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Bagga, Navjeet	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding Demonstration of the Novel Junctionless Complementary FET
Baik, Wissem	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Bailon, Cristina	Real Time Simulations of Advanced MOSFETs
Bajolet, Aurélie	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Balbino Shibutani, André	Operation of Junctionless Nanowire Transistors-Based Common Source Current Mirror at Cryogenic Temperatures
Balestra, Francis	The Ultimate Field Effect Transistor: GAIA MOSFET
Balestra, Luigi	Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
Barraud, Sylvain	In-depth TCAD study of stacked MoS₂ channel FETs based on a channel-last integration
Bausells, Joan	Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes
Bawedin, Maryline	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Beaurepaire, Sylvain	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Bedecarrats, Thomas	Split MLP Architectures for Accurate Joint Modeling of drain and gate currents in FD-SOI Transistors
Bedjaoui, Messaoud	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Bergasmaschi, Flavio Enrico	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Beyer, Christoph	Low-temperature dielectric for BEOL integration of Si-based RFETs
Beyer, Sven	Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
Bibes, Manuel	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Biradar, Sheshank	Fabrication and characterisation of GeSn devices for quantum applications
Blancquaert, Yoann	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Blumenstein, Alan	Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions
Blumenstein, Alan	Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Boichuk, Nazarii	SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification
Boniface, Gregory	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Bou, Agustín	A compact model of perovskite memristors inspired by the Stanford RRAM model
Boujnah, Aicha	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Brehm, Moritz	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
Brevard, Laurent	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Brianceau, Pierre	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Bringuier, Fabien	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Brunet, Laurent	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Brévard, L.	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Byun, Ungbin	Brain-Inspired Computing Enabled by a Universal NbOx Memristor with Multi-Mode Switching
C
Calcade Rodrigues, Jaime	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Canga Panzo, Eduardo	Vertical Capacitance and Edge-Field Engineering in 4H-SiC MOS Capacitors
Cao, Ruyue	Origin of ferroelectricity in HfO2/ZrO2 thin films without depolarization Absence of P-doping by Localized Acceptor Polarons in TeO2 Semiconductors Band gap and Defects of AlScN ferroelectrics for BEOL non-volatile memories Electronic Structure of IGZO and its Hydrogen Defects Electronic Structure of W-doped In2O3 BEOL Oxide Semiconductors
Cardinael, Pieter	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
Cardoso Rangel, Ricardo	Analysis and Optimization of a Planar SOI RFET for Dynamic Reconfigurable Logic
Casanova, Jean-Baptiste	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Cassé, Mikael	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Cassé, Mikaël	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Caño de Andrade, Maria Glória	VTH Extraction in VGT-Normalized AlGaN/GaN HEMTs Vertical Capacitance and Edge-Field Engineering in 4H-SiC MOS Capacitors
Chalupa, Zdenek	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
Chang, Edward-Yi	Optimization of Hybrid Source and Drain Extension Metal in AlGaN/GaN HEMTs: A Simulation and Experimental Study Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
Chang, You Xiang	Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
Chekubasheva, Valeriia	SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification
Chen, Mu Yu	Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
Chen, S.-Y.	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Chen, Shih-Yun	Properties of Ru/Hf1-xZrxO2/p-Si MOS Gate Stack Structures Deposited by Pulsed-DC Sputtering Using a Periodic Layer-by-Layer Deposition Process Area-Dependent Switching and Synaptic Behavior in Al/TiOx/TiN devices
Chen, Yu Hsiang	Study of Variability in Threshold Voltage Engineering for Nanosheet MOSFETs using TCAD
Chen, Zih Fei	Study of Variability in Threshold Voltage Engineering for Nanosheet MOSFETs using TCAD
Cherkaoui, Karim	Fabrication and characterisation of GeSn devices for quantum applications
Chiang, Meng Hsueh	Study of Variability in Threshold Voltage Engineering for Nanosheet MOSFETs using TCAD
Chiarcos, Riccardo	On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work
Cho, Seongjae	Brain-Inspired Computing Enabled by a Universal NbOx Memristor with Multi-Mode Switching
Chouk, Rihab	In-depth TCAD study of stacked MoS₂ channel FETs based on a channel-last integration
Claeys, Cor	Enhancing High-Temperature Analog Performance of MOSFETs Through a Half-Diamond Layout Hardness-by-Design Approach
Clark, Stewart	Band gap and Defects of AlScN ferroelectrics for BEOL non-volatile memories Electronic Structure of IGZO and its Hydrogen Defects Electronic Structure of W-doped In2O3 BEOL Oxide Semiconductors
Collier, Arthur	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Condemine, Cyril	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Couture, Ludovic	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Crespo Yepes, Albert	Dielectric BD in FDSOI Transistors: circuital compact model and Impact on digital Circuits
Cretu, Bogdan	Impact of neglecting the bias dependence of access resistances on DC and 1/f noise parameter extraction Cryogenic DC and Low-Frequency Noise Investigation of Vertical Gate-All-Around Silicon Nanowire pMOSFET Arrays
Cristoloveanu, Sorin	Can resistivity increase with doping? Experimental Demonstration of 2D Core-Shell Junctionless FET From FD-SOI to MoS2 MOSFETs: Coupling Mechanisms
Cueto, Olga	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Culot, Maxime	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Cunningham, John	Temperature Dependent Carrier Transport Mechanisms in WSe2
Cyrille, Marie Claire	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
D
D. M. Corazza, Henrique	Forksheet versus Nanosheet Transistors: A Multi-Dimensional Scaling Comparison of Electrostatic Performance and Thermal Robustness Impact of Forksheet Transistor on Low-Dropout Regulator Performance
Darbandy, Ghader	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures
Das, Partha	Al/SnO2/ITO-Based Memristive Soft-Threshold Neuron (MSTN) for Low-Power Neuromorphic Computing Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Dasgupta, Sudeb	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding Demonstration of the Novel Junctionless Complementary FET
Daus, Alwin	Interplay of Hot Carrier Degradation and Device Variability in NSFETs: A TCAD Study
De Foucauld, Emeric	Split MLP Architectures for Accurate Joint Modeling of drain and gate currents in FD-SOI Transistors
de Souza, Michelly	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Dersch, Nadine	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Dersch, Nadine Sarah	Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions
Dieuzeide, Vincent	Analysis of uncertainties in the Self-Heating Extraction by RF technique in FD-SOI Transistors Demonstration of Trap Recovery by In-Situ Annealing in 28nm FD-SOI MOSFETs at Cryogenic Temperatures
Dimitrakis, Panagiotis	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Diniz, José Alexandre	Vertical Capacitance and Edge-Field Engineering in 4H-SiC MOS Capacitors
Diotte-Fernet, Bertrand	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Dixit, Ankit	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses Mixed Finite Element Method for Quantum Dots Array Simulation Analysis of Self Heating in SiC-6H and Al2O3 Substrate Platforms with SiO2 Buried Oxide Integration on AlGaN HEMT Demonstration of the Novel Junctionless Complementary FET
Dollfus, Philippe	Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene
Donetti, Luca	Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware Security DFT based layered dielectric model for MoS2/SiO2 structure
Doria, Rodrigo	Temperature Influence on Single Trap Junctionless Nanowire Transistors Low-Frequency Noise Analytical Modeling of Rectifiers for Radio-Frequency Energy Harvesting Operation of Junctionless Nanowire Transistors-Based Common Source Current Mirror at Cryogenic Temperatures
Dormieu, Benjamin	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Dou, Cunhua	From FD-SOI to MoS2 MOSFETs: Coupling Mechanisms
Du, Mingyi	Experimental Demonstration of 2D Core-Shell Junctionless FET
Duhan, Pardeep	Impact of BOX scaling and ground plane on 1/f noise in FDSOI pMOSFET
Dupont-Ferrier, Eva	DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics
Durand, Cedric	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Durand, Cédric	DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics
Dünkel, Stefan	Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
E
Eblabla, Abdalla	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Eduardo Seixas Junior, Luis	Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS Technology Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of Variation
Egri Nishinari, Adriano	Analysis and Optimization of a Planar SOI RFET for Dynamic Reconfigurable Logic
Ekström, Mattias	ITO/TiW Contacts for Transparent FDSOI CMOS
Elgaid, Khaled	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Esseni, David	Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene
Eysin, Kilian	Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
F
Fache, Thibaud	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
Fagas, Giorgos	Fabrication and characterisation of GeSn devices for quantum applications
Fanciulli, Marco	Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface engineering On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Faurie, Antoine	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Fehrmann, Eric	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures
Fejzaj, Deianira	Improving the conductance ratio of mechanically-exfoliated MoS2 and WS2 based memristors
Fenouillet-Beranger, Claire	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Fenouillet-Beranger, Claire	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Fenouillet-Beranger, Claire	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Fenouillet-Béranger, Claire	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Fernández, Marta	Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes
Finco, Saulo	Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS Technology Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of Variation
Flandre, Denis	Enhancing High-Temperature Analog Performance of MOSFETs Through a Half-Diamond Layout Hardness-by-Design Approach
Fournel, Frank	Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding
Fraidakis, Pantelis	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Franco, Edoardo	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Freeman, Joshua	Temperature Dependent Carrier Transport Mechanisms in WSe2
Frottier, Theo	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Fuchsberger, Andreas	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
G
Galal El Dine, Manohiaina	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Galderisi, Giulio	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures Low-temperature dielectric for BEOL integration of Si-based RFETs
Galembeck, Egon	Enhancing High-Temperature Analog Performance of MOSFETs Through a Half-Diamond Layout Hardness-by-Design Approach
Galhardo Vaz, Rafael	Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS Technology Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of Variation
Galy, Philippe	Analysis of uncertainties in the Self-Heating Extraction by RF technique in FD-SOI Transistors Demonstration of Trap Recovery by In-Situ Annealing in 28nm FD-SOI MOSFETs at Cryogenic Temperatures
Galy, Philippe	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Gamiz, Francisco	Optimization of Hybrid Source and Drain Extension Metal in AlGaN/GaN HEMTs: A Simulation and Experimental Study Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware Security DFT based layered dielectric model for MoS2/SiO2 structure
Gao, Yingjia	Mixed Finite Element Method for Quantum Dots Array Simulation
Garg, Vivek	Al/SnO2/ITO-Based Memristive Soft-Threshold Neuron (MSTN) for Low-Power Neuromorphic Computing
Gartside, Jack C.	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Gebeyehu, Fitunerediate	Electrostrictive 2D Heterostructures for Steep Slope FET Applications
Gedam, Anju	Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs
Georgiev, Vihar	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses Mixed Finite Element Method for Quantum Dots Array Simulation Demonstration of the Novel Junctionless Complementary FET Real Time Simulations of Advanced MOSFETs
Georgiev, Vihar	Analysis of Self Heating in SiC-6H and Al2O3 Substrate Platforms with SiO2 Buried Oxide Integration on AlGaN HEMT
Ghibaudo, Gerard	The Ultimate Field Effect Transistor: GAIA MOSFET
Giannone, Vincenzo	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Gimenez, Salvador	Enhancing High-Temperature Analog Performance of MOSFETs Through a Half-Diamond Layout Hardness-by-Design Approach Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS Technology Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of Variation
Girnale, Vaibhav	Al/SnO2/ITO-Based Memristive Soft-Threshold Neuron (MSTN) for Low-Power Neuromorphic Computing
Gity, Farzan	Electric Field Control of Metal-to-Semiconductor Transition in BL-PtTe2 Orientation-engineered PtTe2 Schottky FETs for dopant-free advanced technology nodes Temperature Dependent Carrier Transport Mechanisms in WSe2
Goswami, Rupam	Single Trap and Low Frequency 1/f Noise Modeling in MOSFETs with Dirac Materials or 2D Semiconductor Channel
Goyal, Rishab	Dielectric BD in FDSOI Transistors: circuital compact model and Impact on digital Circuits
Graziano Junior, Nilton	VTH Extraction in VGT-Normalized AlGaN/GaN HEMTs
Guillet, Quentin	Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding
Guimarães, Thainá	Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance Amplifier Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA
Gumeniuk, Roman	Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface engineering On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work
Guo, Hailing	Absence of P-doping by Localized Acceptor Polarons in TeO2 Semiconductors Electronic Structure of IGZO and its Hydrogen Defects Electronic Structure of W-doped In2O3 BEOL Oxide Semiconductors
Guo, Yuzheng	Band gap and Defects of AlScN ferroelectrics for BEOL non-volatile memories Electronic Structure of IGZO and its Hydrogen Defects
Gupta, Aayush	Analysis of Self Heating in SiC-6H and Al2O3 Substrate Platforms with SiO2 Buried Oxide Integration on AlGaN HEMT
H
Hall, Steve	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Hauchecorne, Pauline	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Havel, Viktor	Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
Hayward, Tom J.	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Heemskerk, Stijn	Interface-Engineered Cryogenic Memristors Enabling Sub-100 μV Scalable Qubit Biasing
Heinzig, André	Improving the conductance ratio of mechanically-exfoliated MoS2 and WS2 based memristors
Heitmann, Johannes	Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface engineering On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work
Hellström, Per-Erik	ITO/TiW Contacts for Transparent FDSOI CMOS
Hermida-Merino, Carolina	High-precision Triboelectric Haptic Sensor for IoMT Healthcare
Herrmann, Tom	Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
Hervas Ramirez, Antonio Manuel	Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware Security DFT based layered dielectric model for MoS2/SiO2 structure
Hiller, Daniel	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Horiguchi, Naoto	Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance Amplifier Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA
Hua, Erbing	Interface-Engineered Cryogenic Memristors Enabling Sub-100 μV Scalable Qubit Biasing
Hurley, Paul K.	Orientation-engineered PtTe2 Schottky FETs for dopant-free advanced technology nodes
Hutin, Louis	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
I
Iliopoulos, Eleftherios	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Imroze, Fiheon	Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses
Inamdar, Kirti	Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Iniguez, Benjamin	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions A compact model of perovskite memristors inspired by the Stanford RRAM model Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Ioannou-Sougleridis, Vassilios	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Ionica, Irina	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Ishihara, Ryoichi	Interface-Engineered Cryogenic Memristors Enabling Sub-100 μV Scalable Qubit Biasing
Islam, Karimul	Properties of Ru/Hf1-xZrxO2/p-Si MOS Gate Stack Structures Deposited by Pulsed-DC Sputtering Using a Periodic Layer-by-Layer Deposition Process Area-Dependent Switching and Synaptic Behavior in Al/TiOx/TiN devices
Islam, Karimul	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Iwai, Hiroshi	Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
J
J Costa, Fernando	Analytical Modeling of Rectifiers for Radio-Frequency Energy Harvesting
Jadot, Baptiste	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Jain, Akhilesh	Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Jamalzadeh Kheirabadi, Sharieh	Electric Field Control of Metal-to-Semiconductor Transition in BL-PtTe2 Temperature Dependent Carrier Transport Mechanisms in WSe2
Jarjayes, Sylvie	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Jarosik, Michał	Optimization of Magnetron-Sputtered Al Thin Films for Controlled Surface Roughness in RRAM Applications Study of the annealing effect on Al2O3-based 1T1R RRAM cell
Jeon, Jongwook	Strategic Stress Engineering in CFETs: Monolithic vs. Sequential
Jeżak, Piotr	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Jeżak, Piotr	Optimization of Magnetron-Sputtered Al Thin Films for Controlled Surface Roughness in RRAM Applications Study of the annealing effect on Al2O3-based 1T1R RRAM cell Probabilistic bits based on Ag/SiOx/BE threshold switching memristors
Jiménez, David	Bias-dependent contact resistance model in Graphene on-Insulator FETs
Jou, S.	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Jou, Shyankay	Properties of Ru/Hf1-xZrxO2/p-Si MOS Gate Stack Structures Deposited by Pulsed-DC Sputtering Using a Periodic Layer-by-Layer Deposition Process Area-Dependent Switching and Synaptic Behavior in Al/TiOx/TiN devices
Julliard, Pierre-Louis	Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations
K
K. Hurley, Paul	Electric Field Control of Metal-to-Semiconductor Transition in BL-PtTe2 Temperature Dependent Carrier Transport Mechanisms in WSe2
Kaczmarczyk, Lukasz	Mixed Finite Element Method for Quantum Dots Array Simulation
Kang, Hwijung	High-precision Triboelectric Haptic Sensor for IoMT Healthcare
Kang, Myounggon	Brain-Inspired Computing Enabled by a Universal NbOx Memristor with Multi-Mode Switching
Kanyandekwe, Joël	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Karmakar, Ananya	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Kharwar, Saurabh	Temperature Dependent Carrier Transport Mechanisms in WSe2
Khedgarkar, Prabhat	Impact of BOX scaling and ground plane on 1/f noise in FDSOI pMOSFET
Kilchytska, Valeriya	Impact of Device Position within the Silicon Active Area on Self-Heating and Thermal Coupling in FD-SOI Transistors Analysis of uncertainties in the Self-Heating Extraction by RF technique in FD-SOI Transistors Demonstration of Trap Recovery by In-Situ Annealing in 28nm FD-SOI MOSFETs at Cryogenic Temperatures
Kim, Ah-young	Strategic Stress Engineering in CFETs: Monolithic vs. Sequential
Kim, Dongchan	Strategic Stress Engineering in CFETs: Monolithic vs. Sequential
Kim, Sungjun	Brain-Inspired Computing Enabled by a Universal NbOx Memristor with Multi-Mode Switching
Kim, Taeyeong	Implantation- and Bonding-Free Multilayer SOI Fabrication via Annealing–Oxidation
Kleimaier, Dominik Martin	Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
Kloes, Alexander	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Koval, Roman	Interface-Engineered Cryogenic Memristors Enabling Sub-100 μV Scalable Qubit Biasing
Krakovinsky, Alexis	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Krzemiński, Jakub	Probabilistic bits based on Ag/SiOx/BE threshold switching memristors
Kumar, Naveen	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses Mixed Finite Element Method for Quantum Dots Array Simulation Interplay of Hot Carrier Degradation and Device Variability in NSFETs: A TCAD Study Demonstration of the Novel Junctionless Complementary FET
Kumar, Pankaj	Analysis of Self Heating in SiC-6H and Al2O3 Substrate Platforms with SiO2 Buried Oxide Integration on AlGaN HEMT
Kumar, Sandeep	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding Demonstration of the Novel Junctionless Complementary FET
Kumar, Sanjay	Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses
König, Dirk	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Kądziela, Alicja	Probabilistic bits based on Ag/SiOx/BE threshold switching memristors
L
Laffir, Fathima	Fabrication and characterisation of GeSn devices for quantum applications
Lakshmi Narayana, Chadrashekar	Fabrication and characterisation of GeSn devices for quantum applications
Lapras, Valerie	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Lapras, Valérie	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Lapras, Valérie	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Laraignou, Lucie	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Laraignou, Lucie	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Larrieu, Guilhem	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Lauga-Larroze, Estelle	DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics
Laus, Michele	On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Leconte, Mathieu	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Lee, Jaehyun	Real Time Simulations of Advanced MOSFETs
Lee, Jungchul	Implantation- and Bonding-Free Multilayer SOI Fabrication via Annealing–Oxidation
Legoix, Benoit	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Lelis Gonçalez, Odair	Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS Technology Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of Variation
Lenka, Annada Shankar	Interplay of Hot Carrier Degradation and Device Variability in NSFETs: A TCAD Study
Li, Weisheng	Experimental Demonstration of 2D Core-Shell Junctionless FET
Li, Y.-H.	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Lin, Tsai Yu	Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
Lin, Yueh-Chin	Optimization of Hybrid Source and Drain Extension Metal in AlGaN/GaN HEMTs: A Simulation and Experimental Study
Liu, Cheewee	Fabrication and characterisation of GeSn devices for quantum applications
Liu, Han Yu	Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
Lizzit, Daniel	Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene
Llobet, Jordi	Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes
Long, Hanlin	SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification
Lozano, Hugo	Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes
Lucci, Luca	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Lucci, Luca	Impact of Device Position within the Silicon Active Area on Self-Heating and Thermal Coupling in FD-SOI Transistors
Lugo-Alvarez, José	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Luo, Jun-Wei	Origin of ferroelectricity in HfO2/ZrO2 thin films without depolarization
Luo, Jun-Wei	Band gap and Defects of AlScN ferroelectrics for BEOL non-volatile memories
Luo, Xiai	Experimental Demonstration of 2D Core-Shell Junctionless FET
M
M'Foukh, Adel	Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene
Madeira, Pedro Henrique	Co-Integration of Tunnel FET and FinFET for Hybrid LDO Circuit Design
Magalhaes Lucas, Alexandre	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Magalhaes-Lucas, A.	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Mandrillon, Vincent	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Martemucci, Michele	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Martinez, Brian	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Martinez, Juan	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures
Martinez I Diaz, Biel	Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations
Martinie, Sébastien	Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations
Martino, João Antônio	Co-Integration of Tunnel FET and FinFET for Hybrid LDO Circuit Design Analysis and Optimization of a Planar SOI RFET for Dynamic Reconfigurable Logic Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance Amplifier Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA Forksheet versus Nanosheet Transistors: A Multi-Dimensional Scaling Comparison of Electrostatic Performance and Thermal Robustness Impact of Forksheet Transistor on Low-Dropout Regulator Performance
Mavredakis, Nikolaos	Bias-dependent contact resistance model in Graphene on-Insulator FETs
Mavropoulis, Alexandros Eleftherios	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Małkowski, Aleksander	Optimization of Magnetron-Sputtered Al Thin Films for Controlled Surface Roughness in RRAM Applications Study of the annealing effect on Al2O3-based 1T1R RRAM cell Probabilistic bits based on Ag/SiOx/BE threshold switching memristors
Medina-Rull, Alberto	Bias-dependent contact resistance model in Graphene on-Insulator FETs
Mehrad, Mahsa	A T-Shaped Nanocavity Junctionless FET for High-Sensitivity Biomolecule Detection in Medical Diagnostics
Mehrad, Sina	A T-Shaped Nanocavity Junctionless FET for High-Sensitivity Biomolecule Detection in Medical Diagnostics
Memikoglu, Doga Selin	ITO/TiW Contacts for Transparent FDSOI CMOS
Mengesha, Bitania Shiferaw	A compact model of perovskite memristors inspired by the Stanford RRAM model
Menzel, Stephan	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Mikolajick, Thomas	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon Low-temperature dielectric for BEOL integration of Si-based RFETs
Mikolajick, Thomas	Improving the conductance ratio of mechanically-exfoliated MoS2 and WS2 based memristors Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
Miorelli, Roberto	Split MLP Architectures for Accurate Joint Modeling of drain and gate currents in FD-SOI Transistors
Mir, Salvador	DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics
Mitrovic, Ivona	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Mohamad, Blend	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Mohgouk Zouknak, Louis-David	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Moorsom, Timmothy	Temperature Dependent Carrier Transport Mechanisms in WSe2
Morales, Christophe	Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding
Mota Frutuoso, Tadeu	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Moulin, Maxime	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
Mroczyński, Robert	Properties of Ru/Hf1-xZrxO2/p-Si MOS Gate Stack Structures Deposited by Pulsed-DC Sputtering Using a Periodic Layer-by-Layer Deposition Process Area-Dependent Switching and Synaptic Behavior in Al/TiOx/TiN devices Optimization of Magnetron-Sputtered Al Thin Films for Controlled Surface Roughness in RRAM Applications Study of the annealing effect on Al2O3-based 1T1R RRAM cell Probabilistic bits based on Ag/SiOx/BE threshold switching memristors
Mroczyński, Robert	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Mulaosmanovic, Halid	Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
Muller, Tifaine	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Márquez Gonzalez, Carlos	Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware Security DFT based layered dielectric model for MoS2/SiO2 structure
Müller, Johannes	Positive-Bias Erase Schemes for FeFETs: Switching Comparison Between FDSOI and Bulk devices
N
Nafría Maqueda, Montserrat	Dielectric BD in FDSOI Transistors: circuital compact model and Impact on digital Circuits
Nagarajan, Soundarya	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Navarro Moral, Carlos	Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware Security DFT based layered dielectric model for MoS2/SiO2 structure
Ncenta-Mendivil, Jorge	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Neill, Hazel	Temperature Dependent Carrier Transport Mechanisms in WSe2
Nguyen, Khanh-Duy	Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene
Nolot, Emmanuel	Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding
Normand, Pascal	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Nowak, Etienne	Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations
Nyssens, Lucas	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Nyssens, Lucas	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
O
O'Sullivan, Stephen	Temperature Dependent Carrier Transport Mechanisms in WSe2
Ortega Lopez, Ruben	Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware Security DFT based layered dielectric model for MoS2/SiO2 structure
P
Pacheco-Sanchez, Anibal	Bias-dependent contact resistance model in Graphene on-Insulator FETs
Pala, Marco	Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene
Palestri, Pierpaolo	Single Trap and Low Frequency 1/f Noise Modeling in MOSFETs with Dirac Materials or 2D Semiconductor Channel
Panda, Soumya Ranjan	Interplay of Hot Carrier Degradation and Device Variability in NSFETs: A TCAD Study
Pandey, Saurabh Kumar	Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses
Panwar, Sourabh	Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs
Paramio, Sofía	High-precision Triboelectric Haptic Sensor for IoMT Healthcare
Pardo, Mari Carmen	Bias-dependent contact resistance model in Graphene on-Insulator FETs
Pasadas, Francisco	Bias-dependent contact resistance model in Graphene on-Insulator FETs
Pastor, Stanislas	DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics
Patil, Deven H	Demonstration of the Novel Junctionless Complementary FET
Patil, Vilas	Temperature Dependent Carrier Transport Mechanisms in WSe2
Pavanello, Marcelo	Impact of RDF in the channel on the On-current of GAA nanosheet transistors through Monte Carlo simulations Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Pedroso, Kimberlly	Analytical Modeling of Rectifiers for Radio-Frequency Energy Harvesting
Perego, Michele	Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface engineering
Perego, Michele	On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Perez, Eduardo	Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Petitprez, Emmanuel	Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Petkov, Nikolay	Fabrication and characterisation of GeSn devices for quantum applications
Pezzin, Manuel	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Pilotto, Alessandro	Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized graphene
Pimenta-Barros, Patricia	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Pingen, Katrin	Low-temperature dielectric for BEOL integration of Si-based RFETs
Plantier, Christophe	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
Podevin, Florence	DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics
Porti, Marc	Dielectric BD in FDSOI Transistors: circuital compact model and Impact on digital Circuits
Povey, Ian	Fabrication and characterisation of GeSn devices for quantum applications
Pozo Benavides, Jorge	High-precision Triboelectric Haptic Sensor for IoMT Healthcare
Pradelles, Jonathan	Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
Prado Navarrete, Enrique	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
Prates, Rhaycen	Impact of RDF in the channel on the On-current of GAA nanosheet transistors through Monte Carlo simulations
Prenat, Guillaume	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Pulici, Andrea	Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface engineering Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Pulici, Andrea	On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work
Purohit, Jyoti Prakash	Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Pustovyi, Denys	SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification
Puydinger dos Santos, Marcos Vinicius	Vertical Capacitance and Edge-Field Engineering in 4H-SiC MOS Capacitors
Q
Qin, Luo	High-precision Triboelectric Haptic Sensor for IoMT Healthcare
R
Rachidi, Yusra	Split MLP Architectures for Accurate Joint Modeling of drain and gate currents in FD-SOI Transistors
Radu, Ionut	Can resistivity increase with doping?
Raj, Rohit	Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses
Ranjan, Harsh	Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses
Raskin, Jean-Pierre	Can resistivity increase with doping? Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates Impact of Device Position within the Silicon Active Area on Self-Heating and Thermal Coupling in FD-SOI Transistors Analysis of uncertainties in the Self-Heating Extraction by RF technique in FD-SOI Transistors
Raskin, Jean-Pierre	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Rathore, Sunil	Demonstration of the Novel Junctionless Complementary FET
Ratschinski, Ingmar	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Reggiani, Susanna	Role of Interface Degradation and Overlap Capacitance on the RF Performance of Self-Aligned Gate InGaAs MOSFETs
Regiani-Freitas, Dante	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Ribeiro, Arllen	Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance Amplifier Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA
Ribotta, Mickael	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Richter, Claudia	Low-temperature dielectric for BEOL integration of Si-based RFETs
Riquelme Expósito, Antonio Jesús	A compact model of perovskite memristors inspired by the Stanford RRAM model
Robertson, John	Origin of ferroelectricity in HfO2/ZrO2 thin films without depolarization Absence of P-doping by Localized Acceptor Polarons in TeO2 Semiconductors Band gap and Defects of AlScN ferroelectrics for BEOL non-volatile memories Electronic Structure of IGZO and its Hydrogen Defects Electronic Structure of W-doped In2O3 BEOL Oxide Semiconductors
Rodriguez, Philippe	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Rodríguez Martínez, Rosana	Dielectric BD in FDSOI Transistors: circuital compact model and Impact on digital Circuits
Romanjek, Krunoslav	Impact of silicon thickness on the carrier mobility of 28 nm FDSOI MOSFET from room temperature to cryogenic regime
Romanjek, Krunoslav	Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Romanjek, Krunoslav	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
Roxburgh, Max	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Roy, Sourajeet	Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner Rounding
S
Sabatier, Franck	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Sabiá Pereira Carpes, Victor	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Sahebghalam, Nika	Impact of Device Position within the Silicon Active Area on Self-Heating and Thermal Coupling in FD-SOI Transistors
Sahu, Prasanna Kumar	Interplay of Hot Carrier Degradation and Device Variability in NSFETs: A TCAD Study
Sampedro Matarin, Carlos	DFT based layered dielectric model for MoS2/SiO2 structure
Sarkar, Biplab	Real Time Simulations of Advanced MOSFETs
Sato, Shingo	Feasibility Study of a Damage- and Pressure-Free AC Pseudo-MOS Method Using a Mercury Probe
Sauvagnac, Maxime	BOX CREEP : A Mechanical Booster for Next-Generation FDSOI
Savero-Torres, Williams	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Schmult, Stefan	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Schwarz, Mike	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Seguini, Gabriele	Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface engineering
Seguini, Gabriele	On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work
Seguini, Gabriele	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Selmi, Luca	Single Trap and Low Frequency 1/f Noise Modeling in MOSFETs with Dirac Materials or 2D Semiconductor Channel
Sgarro, Paolo	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Shah, Shail	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Shams, Somayeh	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Shashidhara, M.	Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Shen, Jingru	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
Shi, Yi	Experimental Demonstration of 2D Core-Shell Junctionless FET
Shvarts, Andrei	Mixed Finite Element Method for Quantum Dots Array Simulation
Silva, Everton	Temperature Influence on Single Trap Junctionless Nanowire Transistors Low-Frequency Noise
Simoen, Eddy	VTH Extraction in VGT-Normalized AlGaN/GaN HEMTs Impact of neglecting the bias dependence of access resistances on DC and 1/f noise parameter extraction Cryogenic DC and Low-Frequency Noise Investigation of Vertical Gate-All-Around Silicon Nanowire pMOSFET Arrays
Singh, Avanish	Real Time Simulations of Advanced MOSFETs
Singh, Divya	Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Singh, Prabhat	Demonstration of the Novel Junctionless Complementary FET
Singh, Shilpa	Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses
Sirakoulis, Georgios Ch.	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Sistani, Masiar	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
Soares, Caroline	Impact of RDF in the channel on the On-current of GAA nanosheet transistors through Monte Carlo simulations
Song, Weijia	Can resistivity increase with doping?
Sonnerat, Florence	Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
Sp, Sreejan	Real Time Simulations of Advanced MOSFETs
Srivastava, Shobhit	Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs
Srivastava, Shobhit	Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight
Sultana, Rezwana	Properties of Ru/Hf1-xZrxO2/p-Si MOS Gate Stack Structures Deposited by Pulsed-DC Sputtering Using a Periodic Layer-by-Layer Deposition Process Area-Dependent Switching and Synaptic Behavior in Al/TiOx/TiN devices
Sultana, Rezwana	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Sánchez del Río Sáez, José	High-precision Triboelectric Haptic Sensor for IoMT Healthcare
T
T Fonte, Ewerton	Analytical Modeling of Rectifiers for Radio-Frequency Energy Harvesting
Taglietti, Fabiana	On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at work
Taglietti, Fabiana	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Tahiat, Abderrahim	Impact of neglecting the bias dependence of access resistances on DC and 1/f noise parameter extraction Cryogenic DC and Low-Frequency Noise Investigation of Vertical Gate-All-Around Silicon Nanowire pMOSFET Arrays
Tejedor, Paloma	Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes
Tellis, Lisa	Low-temperature dielectric for BEOL integration of Si-based RFETs
Theodorou, Christoforos	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Thonnart, Yvain	A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits
Thouvard, Alan	Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding
Tijent, Fatima Zahrae	Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations
Trevisoli, Renan	Temperature Influence on Single Trap Junctionless Nanowire Transistors Low-Frequency Noise Analytical Modeling of Rectifiers for Radio-Frequency Energy Harvesting Operation of Junctionless Nanowire Transistors-Based Common Source Current Mirror at Cryogenic Temperatures
Triozon, Francois	In-depth TCAD study of stacked MoS₂ channel FETs based on a channel-last integration
Trommer, Jens	Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate Architectures Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Tseng, Howie	Optimization of Hybrid Source and Drain Extension Metal in AlGaN/GaN HEMTs: A Simulation and Experimental Study
Tyrovolas, Stefanos	High-precision Triboelectric Haptic Sensor for IoMT Healthcare
V
Vaghasiya, Malay	Analysis of Self Heating in SiC-6H and Al2O3 Substrate Platforms with SiO2 Buried Oxide Integration on AlGaN HEMT
Vajjula, Nigama	Electrostrictive 2D Heterostructures for Steep Slope FET Applications
Vanbrabant, Martin	Impact of Device Position within the Silicon Active Area on Self-Heating and Thermal Coupling in FD-SOI Transistors Demonstration of Trap Recovery by In-Situ Annealing in 28nm FD-SOI MOSFETs at Cryogenic Temperatures
Vanbrabant, Martin	Analysis of uncertainties in the Self-Heating Extraction by RF technique in FD-SOI Transistors
Vandendaele, William	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Vandermolen, Eric	Analysis of uncertainties in the Self-Heating Extraction by RF technique in FD-SOI Transistors
Vandroogenbroek, Arthur	Opposite-Polarity Fixed Charges in BEOL Dielectrics for Interface Passivation on HR Silicon Substrates
Vasilaki, Eleni	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Vasileiadis, Nikolaos	Al-rich AlN thin films deposited by Molecular Beam Epitaxy on SiNx ReRAMs
Vasileska, Dragica	Impact of RDF in the channel on the On-current of GAA nanosheet transistors through Monte Carlo simulations
Vaughan, Matthew	Temperature Dependent Carrier Transport Mechanisms in WSe2
Vazquez, Emanuel	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Veloso, Anabela	Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance Amplifier Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA Impact of neglecting the bias dependence of access resistances on DC and 1/f noise parameter extraction Cryogenic DC and Low-Frequency Noise Investigation of Vertical Gate-All-Around Silicon Nanowire pMOSFET Arrays
Venuto, Vanessa	Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage OTA
Vernhet, Alexandre	Impact of source/drain dopant implantation and spike annealing on electrical parameters of 25 nm FDSOI n-MOSFETs
Vidamour, Ian	Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear Elements
Vila, Laurent	Ultra-low-power in-memory computing based on spin-orbit ferroelectric devices for artificial intelligence and logic
Vincent, Jason	Improving the conductance ratio of mechanically-exfoliated MoS2 and WS2 based memristors
Vitusevich, Svetlana	SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification
Vono Peruzzi, Vinicius	Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS Technology Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of Variation
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Wallis, David	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Wang, Xinran	Experimental Demonstration of 2D Core-Shell Junctionless FET
Wang, Yeong Her	Study of Variability in Threshold Voltage Engineering for Nanosheet MOSFETs using TCAD
Weber, Walter M.	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
Wei, Zijun	Experimental Demonstration of 2D Core-Shell Junctionless FET
Wenger, Christian	Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability Conditions Investigation of 1T1R Memristive Structures and Physics-Based Extension of the Stanford Model Including the Change of Filament Geometry
Wind, Lukas	Enhancing Negative Differential Transconductance by Ultra-Thin Ge on SOI
Wirth, Gilson	Impact of RDF in the channel on the On-current of GAA nanosheet transistors through Monte Carlo simulations
Wirth, Steffen	Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of Silicon
Wiśniewski, Piotr	Optimization of Magnetron-Sputtered Al Thin Films for Controlled Surface Roughness in RRAM Applications Study of the annealing effect on Al2O3-based 1T1R RRAM cell Probabilistic bits based on Ag/SiOx/BE threshold switching memristors
Wiśniewski, Piotr	Ultra-low power Ru/TiOx/TiN RRAM structures for applications in neuromorphic computing
Wu, Tong	Experimental Demonstration of 2D Core-Shell Junctionless FET From FD-SOI to MoS2 MOSFETs: Coupling Mechanisms
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Xu, Yong	From FD-SOI to MoS2 MOSFETs: Coupling Mechanisms
Xu, Yong	Experimental Demonstration of 2D Core-Shell Junctionless FET
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Yan, Yu	From FD-SOI to MoS2 MOSFETs: Coupling Mechanisms
Yen, Bo Cheng	Study of Variability in Threshold Voltage Engineering for Nanosheet MOSFETs using TCAD
Yokoyama, Ruka	Feasibility Study of a Damage- and Pressure-Free AC Pseudo-MOS Method Using a Mercury Probe
Yu, Zhihao	Experimental Demonstration of 2D Core-Shell Junctionless FET
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Zareiee, Meysam	A T-Shaped Nanocavity Junctionless FET for High-Sensitivity Biomolecule Detection in Medical Diagnostics
Zhang, Xuan	From FD-SOI to MoS2 MOSFETs: Coupling Mechanisms
Zhang, Yongqiang	SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification
Zhang Fu, Yinyin.	Impact of Device Position within the Silicon Active Area on Self-Heating and Thermal Coupling in FD-SOI Transistors Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
Zhou, Jiafeng	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Zhou, Siwei	Ultra-low threshold voltage shifts in passivated GaN-on-Si HEMTs under cryogenic operation
Zhulai, Dmytro	SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification
Zou, Caiqi	Experimental Demonstration of 2D Core-Shell Junctionless FET