Program for Thursday, May 21st: Talk View

PROGRAM FOR THURSDAY, MAY 21ST: TALK VIEW

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View: with abstracts session overview

9:00

9:30

10:00

10:30

11:00

11:30

12:00

12:30

13:00

13:30

14:00

14:30

15:00

15:30

16:00

16:30

17:00

17:30

18:00

18:30

19:00

09:00-09:40 Invited Talk 3

09:40-10:00

Experimental Demonstration of 2D Core-Shell Junctionless FET

Du, Wei, Wu, Li, Zou, Luo, Yu, Xu, Shi, Cristoloveanu, Wang

10:00-10:20

In-depth TCAD study of stacked MoS₂ channel FETs based on a channel-last integration

Rihab Chouk, Francois Triozon, Sylvain Barraud

10:20-10:40

Ab-initio transport simulations of Dirac Source FETs based on van der Waals Heterojunctions between graphene and functionalized

K.-D. Nguyen, A. Pilotto, D. Lizzit, M. Pala, A. M'Foukh, P. Dollfus, D. Esseni

10:40-11:00

DFT based layered dielectric model for MoS2/SiO2 structure

Ortega Lopez et.al

11:30-11:50

Forksheet versus Nanosheet Transistors: A Multi-Dimensional Scaling Comparison of Electrostatic Performance and Thermal

Diogo A. Vaccaro, Henrique D. M. Corazza, Joao Antonio Martino

11:50-12:10

Impact of Forksheet Transistor on Low-Dropout Regulator Performance

H. De Mare Corazza, D. Vaccaro, J. Antonio Martino, P. Ghedini Der Agopian

12:10-12:30

Real Time Simulations of Advanced MOSFETs

A. Singh, S. Sp, A. Ashai, C. Bailon, J. Lee, V. Georgiev, B. Sarkar, O. Badami

12:30-12:50

Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD

F.Z. Tijent, B. Martinez I Diaz, P.-L. Julliard, E. Nowak, S. Martinie

12:50-13:10

Impact of RDF in the channel on the On-current of GAA nanosheet transistors through Monte Carlo

R. Prates, C. Soares, G. Wirth, D. Vasileska, M. Pavanello

14:30-15:10 Invited Talk 4

15:10-15:30

Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI

Zhang Fu et.al

15:30-15:50

Low-temperature dielectric for BEOL integration of Si-based RFETs

K. Pingen, C. Beyer, G. Galderisi, L. Tellis, C. Richter, T. Mikolajick

15:50-16:10

ITO/TiW Contacts for Transparent FDSOI CMOS

Doga Selin Memikoglu, Per-Erik Hellström, Mattias Ekström

16:10-16:30

Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes

Petitprez et.al

16:40-19:00

Electrostrictive 2D Heterostructures for Steep Slope FET Applications

Nigama Vajjula, Fitunerediate Gebeyehu, Ethan Ahn

VTH Extraction in VGT-Normalized AlGaN/GaN HEMTs

Nilton Graziano Junior, Eddy Simoen, Maria Glória Caño de Andrade

Unified Physics-Based Verilog-A Compact Model of Independent-Gate Reconfigurable FETs: Dual- and Triple-Gate

Karmakar et.al

Relocating Dopants from Si to SiO2: About Fundamentals and Applications of Modulation Acceptor Doping of

Hiller et.al

Simulating the Impact of Activation Functions on the Performance of 1T1R RRAM-Based Neural Networks Under Cycle-to-Cycle Variability

Blumenstein, Perez, Wenger, Dersch, Kloes, Iñiguez, Schwarz

Enhancing High-Temperature Analog Performance of MOSFETs Through a Half-Diamond Layout Hardness-by-Design

Egon Galembeck, Denis Flandre, Cor Claeys, Salvador Gimenez

A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits

Faurie et.al

Co-Integration of Tunnel FET and FinFET for Hybrid LDO Circuit Design

Pedro Henrique Madeira, Paula Ghedini Der Agopian, João Antônio Martino

Study of Variability in Threshold Voltage Engineering for Nanosheet MOSFETs using TCAD

Zih Fei Chen, Bo Cheng Yen, Yu Hsiang Chen, Yeong Her Wang, Meng Hsueh Chiang

Strategic Stress Engineering in CFETs: Monolithic vs. Sequential

Ah-young Kim, Dongchan Kim, Jongwook Jeon

Al/SnO2/ITO-Based Memristive Soft-Threshold Neuron (MSTN) for Low-Power Neuromorphic Computing

Vaibhav Girnale, Vivek Garg, Partha Das

A T-Shaped Nanocavity Junctionless FET for High-Sensitivity Biomolecule Detection in Medical

Sina Mehrad, Meysam Zareiee, Mahsa Mehrad

Bias-dependent contact resistance model in Graphene on-Insulator FETs

Mavredakis, Pacheco-Sanchez, Medina-Rull, Pardo, Pasadas, Jiménez

Feasibility Study of a Damage- and Pressure-Free AC Pseudo-MOS Method Using a Mercury Probe

Ruka Yokoyama, Shingo Sato

Optimization of Hybrid Source and Drain Extension Metal in AlGaN/GaN HEMTs: A Simulation and Experimental

Howie Tseng, Yueh-Chin Lin, Francisco Gamiz, Edward-Yi Chang

High-precision Triboelectric Haptic Sensor for IoMT Healthcare

Kang et.al

Analysis and Optimization of a Planar SOI RFET for Dynamic Reconfigurable Logic

Adriano Egri Nishinari, Ricardo Cardoso Rangel, João Antonio Martino

Impact of Random Dopant Fluctuation in Stacked Drain Extended NSFETs

A. Jain, J.P. Purohit, D. Singh, S. Panwar, A. Gedam, S. Srivastava, A. Acharya

Non-Quasi Static Small Signal Model of a Nanosheet FET for High-Frequency Application: Capturing the Role of the Corner

Awasthi, Kumar, Bagga, Dixit, Kumar, Georgiev, Roy, Dasgupta

Physical Electro-thermal Modelling of HfO2-based Nanoscale Memristor for Artificial Synapses

Raj, Ranjan, Singh, Imroze, Kumar, Dixit, Georgiev, Kumar, Pandey

Properties of Ru/Hf1-xZrxO2/p-Si MOS Gate Stack Structures Deposited by Pulsed-DC Sputtering Using a Periodic Layer-by-Layer Deposition

Rezwana Sultana, Karimul Islam, Shyankay Jou, Shih-Yun Chen, Robert Mroczyński

Area-Dependent Switching and Synaptic Behavior in Al/TiOx/TiN devices

Karimul Islam, Rezwana Sultana, Shyankay Jou, Shih-Yun Chen, Robert Mroczyński

Mixed Finite Element Method for Quantum Dots Array Simulation

Y. Gao, N. Kumar, A. Dixit, A. Shvarts, L. Kaczmarczyk, V. Georgiev

Electric Field Control of Metal-to-Semiconductor Transition in BL-PtTe2

Sharieh Jamalzadeh Kheirabadi, Farzan Gity, Paul K. Hurley, Lida Ansari

Experimental Nanosheet Transistors: Temperature and Inversion-Regime Effects on a Two-Stage Operational Transconductance

T. Guimarães, A. Ribeiro, J. Martino, A. Veloso, N. Horiguchi, P. Agopian

Impact of Vertical Nanowire VFET Structural Asymmetry on Static and Dynamic Performance of Two-Stage

Ribeiro, Guimaraes, Venuto, Martino, Veloso, Horiguchi, Agopian

Origin of ferroelectricity in HfO2/ZrO2 thin films without depolarization

Ruyue Cao, John Robertson, Jun-Wei Luo

Interplay of Hot Carrier Degradation and Device Variability in NSFETs: A TCAD Study

A.S. Lenka, P.K. Sahu, N. Kumar, A. Daus, S.R. Panda

Vertical Capacitance and Edge-Field Engineering in 4H-SiC MOS Capacitors

E. Canga Panzo, J.A. Diniz, M.G. Cano de Andrade, M.V. Puydinger dos Santos

Absence of P-doping by Localized Acceptor Polarons in TeO2 Semiconductors

Hailing Guo, Ruyue Cao, John Robertson

Band gap and Defects of AlScN ferroelectrics for BEOL non-volatile memories

Ruyue Cao, Jun-Wei Luo, Stewart Clark, Yuzheng Guo, John Robertson

Electronic Structure of IGZO and its Hydrogen Defects

Ruyue Cao, Stewart Clark, Hailing Guo, Yuzheng Guo, John Robertson

Electronic Structure of W-doped In2O3 BEOL Oxide Semiconductors

John Robertson, Ruyue Cao, Stewart Clark, Hailing Guo

Temperature Influence on Single Trap Junctionless Nanowire Transistors Low-Frequency Noise

Everton Silva, Renan Trevisoli, Rodrigo Doria

Orientation-engineered PtTe2 Schottky FETs for dopant-free advanced technology nodes

Lida Ansari, Paul K. Hurley, Farzan Gity

Tuning the metal-insulator transition in ultrathin silicon-on-insulator films through interface

A. Pulici, G. Seguini, R. Gumeniuk, J. Heitmann, M. Fanciulli, M. Perego

Experimental Emulation and Functional Validation of a Dual-Doped Reconfigurable FET for Hardware

Hervas Ramirez et.al

On the activation of dopants in ultrathin Si films: interface effects and dielectric mismatch at

Pulici et.al

Stack-in-Pillar, a CFET strategy to implement IC at advanced technology nodes

E. Amat, H. Lozano, P. Tejedor, M. Fernández, J. Bausells, J. Llobet

A compact model of perovskite memristors inspired by the Stanford RRAM model

B.S. Mengesha, A.J. Riquelme Expósito, A. Bou, B. Iniguez

DC characterization of BEOL metallic layers in silicon technologies for cryogenic microelectronics

S. Pastor, S. Mir, E. Lauga-Larroze, F. Podevin, E. Dupont-Ferrier, C. Durand

SOI based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification

Long, Zhang, Zhulai, Boichuk, Pustovyi, Chekubasheva, Vitusevich

Exploiting SOI nonlinear heterogeneity to implement KAN physical networks using Synaptic Nonlinear

Taglietti et.al

Temperature Dependent Carrier Transport Mechanisms in WSe2

O'Sullivan et.al

Analytical Modeling of Rectifiers for Radio-Frequency Energy Harvesting

K. Pedroso, E. T Fonte, F. J Costa, R. T Doria, R. Trevisoli

Impact of neglecting the bias dependence of access resistances on DC and 1/f noise parameter

Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso, Eddy Simoen

Performance Assessment of Spacer Engineered InGaAs NSFETs: A Physical Insight

Singh, Jain, Purohit, Shashidhara, Srivastava, Dasgupta, Inamdar, Acharya

Dielectric BD in FDSOI Transistors: circuital compact model and Impact on digital Circuits

R. Goyal, R. Rodríguez Martínez, M. Nafría Maqueda, M. Porti, A. Crespo Yepes

Analysis of Self Heating in SiC-6H and Al2O3 Substrate Platforms with SiO2 Buried Oxide Integration on AlGaN

Malay Vaghasiya, Aayush Gupta, Ankit Dixit, Vihar Georgiev, Pankaj Kumar

Impact of BOX scaling and ground plane on 1/f noise in FDSOI pMOSFET

Prabhat Khedgarkar, Pardeep Duhan

Optimization of Magnetron-Sputtered Al Thin Films for Controlled Surface Roughness in RRAM

M. Jarosik, A. Małkowski, P. Jeżak, P. Wiśniewski, R. Mroczyński

Demonstration of the Novel Junctionless Complementary FET

Kumar, Patil, Singh, Rathore, Dixit, Kumar, Georgiev, Dasgupta, Bagga

Statistical Robustness Analysis of Diamond MOSFETs under High-Dose Gamma Radiation in 350 nm Bulk CMOS

Eduardo Seixas Junior et.al

Study of the annealing effect on Al2O3-based 1T1R RRAM cell

A. Malkowski, P. Jeżak, M. Jarosik, R. Mroczyński, P. Wiśniewski

Statistical Robustness Analysis of MOSFETs with Different Layout Styles Under Gamma Radiation Using the Coefficient of

Galhardo Vaz et.al

Operation of Junctionless Nanowire Transistors-Based Common Source Current Mirror at Cryogenic

André Balbino Shibutani, Rodrigo Trevisoli Doria, Renan Trevisoli

11:00-11:30 Coffee Break

13:10-14:30 Lunch Break

16:40-17:00 Coffee Break