TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
- | |
- Copper layer | |
- Packaging | |
- PCB-Embedded | |
- Power module | |
- Silver sintering | |
2 | |
2N | |
3 | |
3-D thermal network model | |
3D flash memory | |
3D ICs | |
3D Image processing | |
3D NAND flash | |
3D NAND flash memory | |
4 | |
4N | |
A | |
accelerated aging test | |
accelerated life tests | |
Accelerated Stress Testing | |
accelerated testing | |
acceptor ionization | |
Accumulative testing | |
acoustic microscopy | |
active thermal management | |
Adaptive Bias | |
Adaptive DE | |
Addtive manufacturing | |
adhesion strength degradation | |
AEC-Q | |
Aging | |
Aging indicator | |
AIA | |
AlGaN barrier | |
AlGaN/GaN HEMTs | |
ALT | |
Aluminum Electrolytic Capacitor | |
Analog simulation | |
analysis of catastrophic failure | |
analysis of degradation data | |
analytical method | |
Anisotropy | |
anneal optimization | |
AP-SoC | |
Application Stress Testing | |
Arrhenius | |
Artificial intelligence | |
asynchronous circuits | |
Au wire | |
AuPd wire | |
Automatic Defect detection | |
automotive electronics packaging | |
avalanche breakdown | |
avalanche mode | |
Avalanche Ruggedness | |
AXI | |
B | |
Backside Si trenching | |
Ball bond shear test | |
BAMFIT | |
Bar | |
Battery degradation | |
Bayesian parameter estimation | |
BEOL thermal distribution | |
BIMOS transistor | |
body diode SiC MOSFET | |
Bond wire | |
Bond wires degradation | |
Bonding | |
bonding wire | |
breakdown meachanisms | |
bridges in parallel | |
BTI | |
BTS | |
buffer trapping | |
Burn-in | |
C | |
C-rate dependency | |
C-V analysis | |
Capacitive RF-MEMS | |
Capacitors | |
Capasitive MEMS | |
Carrier multiplication factor | |
carrier profiling | |
Cascode | |
CdTe solar cells | |
CFD | |
channel size | |
Charge trapping | |
Circuit Design | |
Circuit-level design | |
clustering | |
CMOS | |
CMUT | |
cohesive zone model | |
Cold plate | |
collector-emitter voltage | |
Combined aging | |
compact | |
Compact thermal network | |
compensation | |
complex system | |
component | |
Component-of-the-Shelf (COTS) | |
Condition monitoring | |
Conducted EMI | |
Connectors | |
constitutive model | |
Contact Resistance | |
converters | |
converters in parallel | |
copper contacts degradation | |
Copula function | |
Correlative microscopy | |
corrosion | |
Cortex-M4 processor | |
COTS | |
counterfeit detection | |
counterfeit electronics | |
coupling liquid | |
Crack | |
crack growth | |
Crack Propagation | |
Cracks | |
Critical energy | |
cross-sectional nanoindentation | |
Crystal Defects | |
crystalline silicon solar cell | |
Cu-Al ball bond | |
current balance | |
current collapse | |
current filament | |
Current Flow Reversal Control | |
Current reference circuit | |
current sampling delay | |
current surge | |
cyclic stress test in design | |
D | |
damage | |
damage effects | |
Damage Mechanism | |
Damage Model | |
Damage Model Calibration | |
Damage Model Fitting | |
Damage recovery | |
DC shift | |
DC/DC | |
DDR4 memory | |
de-trapped carrier | |
Deep levels | |
Defect | |
Defect oriented testing | |
Defects | |
defects behaviour under electron beam irradation | |
defects reduction | |
Degradation | |
Degradation Monitoring | |
degradation process | |
Derating factor | |
devices | |
Diamond | |
Die attach | |
dielectric | |
Dielectric charging | |
different thickness CdTe | |
different thickness Cu | |
digital circuits | |
digital twin | |
Diode-clamped three-level inverter; | |
direct bonded copper layout | |
discolations | |
Double Pulse | |
double-sided cooled | |
DPA | |
Drift zone | |
dye penetrant test | |
Dynamic characteristics | |
dynamic operational condition | |
Dynamic R_DSON | |
dynamic RDSon | |
dynamic recurrent neural network | |
Dynamic Response | |
E | |
E-Mode | |
Effective temperature | |
Electrical contact resistance | |
electrical ruggedness | |
electrification projects | |
electro-thermal model | |
electro-thermal modelling | |
electrochemical impedance spectroscopy | |
electrochemical plating | |
electroluminescence | |
electromigration | |
Electron devices | |
electronic converters | |
electronic devices | |
Electronic failure analysis | |
electronics | |
emc | |
Emission microscopy | |
Emission simulation | |
End-pointing | |
Energy-absorption impedance | |
Enhancing Reliability | |
equivalent input disturbance; | |
error | |
error detecting scheme | |
error detection and correction | |
ESD | |
established technologies | |
Etch selectivity | |
Evaluation | |
Excitation control modes | |
Experimental platform based on FPGA | |
experiments | |
Extended Drain MOSFET | |
F | |
Failure Analyses | |
Failure analysis | |
Failure Analysis Tool | |
Failure diagnosis | |
failure mechanism | |
Failure modes | |
Failure rate | |
Fault diagnosis | |
fault injection | |
Fault isolation | |
Fault tolerance | |
fault-diagnosis | |
Fault-tolerant control | |
FBGA solder ball defect | |
FC PVC | |
FD-SOI | |
FDSOI | |
FE Simulations | |
FEA | |
FEM | |
FEM Simulations | |
FEOL TDDB | |
ferroelectric tunneling-field-effect-transistor | |
FGPA | |
Fiber optic diamond sensor probe | |
Field emission | |
Field Plate failure | |
field plate type UMOSFET | |
field programmable gate array | |
film | |
FinFET | |
Finite Element Methods | |
Finite element modeling | |
finite element simulation | |
Flash memory cell | |
flexible lithium ion battery | |
Floquet theory | |
fluoresence | |
fluorocarbon | |
FPGA | |
Fretting wear | |
Front-end time dependent dielectric breakdown | |
G | |
Gallium Nitride | |
GaN | |
GaN HEMT | |
GaN HEMTs | |
GaN High Electron Mobility Transistors (HEMTs) | |
GaN micropipes | |
GaN Power amplifiers | |
GaN power HEMT | |
GaN vertical | |
GaN-HEMTs | |
gate contact length | |
Gate driver | |
gate oxide | |
Gate threshold voltage instability | |
gate trapping | |
gate trench module | |
gate-drive circuits | |
Gated diode | |
Gaussian Process Regression | |
GeSbTe | |
GeTe | |
GH50 | |
glass | |
GPU | |
Graphene | |
gray market | |
H | |
H5 inverter | |
Hamming code | |
Hard Switching | |
hardening techniques | |
Heatsink | |
heavy ion | |
Hemt | |
High Frequency (100 kHz) | |
high humidity high temperature power cycling | |
High power module | |
High sensitivity measurement | |
high temperature | |
high temperature electronics | |
High temperature reverse bias | |
high-K | |
Hopping conduction | |
Hot Carriers | |
Hot Electrons | |
Hot-Carrier | |
hot-electron | |
Hotspot | |
HTOL | |
HTRB | |
HTSL | |
Hybrid modulation | |
I | |
I-V characteristic | |
IC debug | |
IEMI | |
IGBT | |
IGBT module | |
IGBT Power Module | |
IGBT Semiconductors | |
IGBTs | |
Image Alignment | |
impedance measurements | |
impedance-source inverter | |
Improved DC Current Flow Controller (CFC) | |
Improved Ideal DC Current Source | |
Incremental Capacity | |
Inspection | |
insulated gate bipolar transistor | |
Insulated gate bipolar transistor modules (IGBT) | |
Integrating electric | |
inter-turn short circuit | |
interface defect | |
Interface reliability | |
interference between word lines | |
Intermittent errors | |
internal gate resistance | |
Intersymbol interference(ISI) | |
Inverter | |
inverters | |
Ion flux data | |
ISA extension | |
isopropanol | |
J | |
J integral | |
junction breakdown junction engineering | |
Junction temperature | |
L | |
l=Lifetime Prediction | |
Large-signal EMI | |
Laser | |
Latent damages | |
layouts | |
Lead-free solder joint | |
lectronic equipment | |
LFN | |
Li-ion battery | |
LICA | |
life prediction | |
lifetime | |
lifetime modelling | |
Lifetime prediction | |
Lifetime prognostic | |
Light Emitting Diode | |
Limitations | |
Lithium-ion battery | |
lithium-ion battery discharge time | |
LLC resonant converter | |
Local deep level transient spectroscopy | |
Logical Masking Effect | |
long short-term memory | |
long-term reliability | |
Long-term reliability prediction | |
low power | |
low power design | |
low TMR and low voltage | |
Lumen Degradation | |
M | |
M3D | |
Machine learning | |
machine side converter (MSC) | |
magnesium concentration | |
magnetic field imaging | |
Majority voter | |
Manufacture parameters | |
materials for harsh environments | |
matrix eigenvalue | |
mechanical | |
mechanical fatigue | |
mechanical properties | |
MEMS | |
Meshed Multi-terminal HVDC (M2TDC) | |
Metal etch | |
Metallized film capacitor (MFC) | |
mibot | |
micoelectronics reliability | |
Microelectronics reliability | |
microstructure | |
Mission Profile | |
mixed-signal simulation | |
mobile ion | |
mode identification | |
model-based prognostics | |
modeling | |
modified Engelmaier fatigue model | |
modular multilevel converter (MMC) | |
Modular Test System | |
modulation strategy | |
Moisture | |
moisture uptake | |
Monte Carlo analysis | |
MOSFET | |
Motor drives | |
multi-chip SiC power module | |
multi-field coupling | |
Multi-layer ceramic capacitors | |
multi-performance degradation products | |
Multi-phase PMSM | |
multi-switches faults | |
multiphysics | |
multiple failure mechanisms | |
Multiple quantum well | |
Multiple short-circuits | |
MUT | |
N | |
Nanoindentation | |
nanolaminate | |
Nickel | |
nMOS | |
non-intrusive sensing method | |
Non-volatile memory | |
Nondestructive evaluation | |
NTC | |
O | |
Off-grid cascade photovoltaic-storage system | |
OFF-state trapping | |
Online junction temperature estimation | |
operating mode | |
Operating modes analysis | |
Optical Interference fringe | |
P | |
p-GaN gate | |
p-type GaN HEMT | |
package | |
Packaging | |
parallel connection | |
paralleled LLC resonant converter system | |
parasitic parameters | |
partial discharge | |
particle swarm optimization | |
passivation | |
PCB Embedding | |
PCB-Embedding | |
PCC wire | |
PCM | |
PDSOI | |
Peak Tracking | |
Performance | |
performance degradation | |
performance degradation evaluation | |
permanent-magnet synchronous generator (PMSG) | |
pGaN HEMT | |
phase change memory | |
Phase transformation | |
photoemission | |
photomultiplier tube | |
Photovoltaic (PV) module | |
Physical Model | |
physics of failure model | |
Piezoresistive transduction | |
Pin Assignment | |
Planar-gate SiC-MOSFET | |
plasma generation | |
Platinum | |
PMSM | |
Point defects | |
Polarization Super Junction Technology | |
positive charge storage | |
potential-induced degradation | |
Power | |
Power converter | |
Power Cycling | |
Power cycling test | |
Power device | |
Power devices | |
Power die | |
Power electronics | |
Power modules | |
Power Modules Aging | |
Power semiconductor device | |
Power SiC device reliability | |
Power supplies | |
Pre-insertion scheme | |
Press-pack | |
Pressure and liquid tolerant | |
pressure sensor | |
Process variability | |
process variation | |
Prognostics | |
proton | |
Pull test | |
pulsed drain current | |
pulsed I-V | |
punch-through effect | |
PV inverter | |
PV modules | |
PV panels | |
PWM | |
Q | |
quality GaN | |
quasi | |
quasi Z source inverter | |
R | |
Radiation | |
radiation effect | |
Radiation immunity | |
Radiation-Hardening-By-Design (RHBD) | |
Rail potential | |
real-time monitoring | |
Rectifier bridge | |
Rectifier diode | |
Redistribution of charge | |
relaxation mechanism | |
Reliability | |
reliability analysis | |
Reliability assessment | |
Reliability based design optimization | |
reliability evaluation | |
Reliability for Subsea Power Semiconductors | |
reliability issue | |
Reliability modeling | |
Reliability Optimization | |
Reliability Simulation | |
Reliability testing and analysis | |
reliability; | |
repetitive control; | |
Repetitive critical energy | |
responsivity | |
retention time | |
Reverse conduction | |
Review | |
RF MEMS switches | |
RF PA | |
Ring Oscillator | |
roadmap | |
robotic | |
Robustness | |
RON increase | |
rotatory-wing unmanned aerial vehicles | |
Row hammer | |
Rsd increase | |
RTN | |
Ruggedness | |
S | |
sample size | |
Sampling | |
scanning nonlinear dielectric microscopy | |
SCM | |
SCR | |
SDRAM | |
SEE | |
SEGR | |
SEL | |
self-activated BIST | |
Self-Switching Diodes | |
semi-full-bridge (SFB) submodule | |
semi-insulating | |
semiconductor | |
semiconductor DC circuit breaker | |
Semiconductor material | |
sensing current | |
sensing margin | |
sensitivity analysis | |
sensitivity evaluation of single event transient | |
sensor reliability | |
SET | |
SEU | |
SEUs | |
SHE | |
Shear Test | |
shoot-through protection | |
short channel effects | |
Short circuit | |
Short-circuit | |
short-circuit capability | |
Short-circuit degradation | |
Short-circuit robustness | |
shrinking | |
Si heterojunction solar cell | |
Si_MOSFET | |
SiC Cascode | |
SiC JFET | |
SiC MOSFET | |
SiC MOSFETs | |
SiC power devices | |
SiC Power MOSFET | |
SiC power MOSFETs | |
SiC-JFET | |
Signal Probability | |
signal rise time | |
significantly | |
Silicidation | |
silicon | |
silicon carbide | |
Silicon Carbide (SiC) | |
Silicon nanogauges | |
Silicon Nitride | |
Silicone gel | |
Simplified Hybrid Modelling Approach | |
simulation | |
simulation method | |
simulation methodology | |
simulation verification | |
single event effect | |
Single Event Effects | |
single event upset | |
Single Event Upset(SEU) | |
Single-defects | |
Single-Event Effects | |
Single-Event Transient | |
sinter silver | |
Sintered Ag | |
smarprobe | |
Smart-Power | |
Smartgrids | |
smt | |
SnO2 gas sensor | |
SoC | |
Soft error | |
Soft error rate | |
Soft gamma radiation | |
soft switching operation | |
Soiling sensor | |
Solar cells | |
Solar particle event | |
solder ball void | |
Solder crack | |
Solder Fatigue | |
solder joint | |
solder joints | |
Solderless packaging | |
solutions | |
Space | |
Space applications | |
Spectrometer chain | |
Speed-falling stage | |
spin transfer torque magnetic random access memory (STT-MRAM) | |
SRAM | |
SST’s structural composition | |
Stability | |
stability analysis | |
standard cells | |
state of charge | |
State of Health | |
static | |
Stator voltage establishment | |
storage | |
storage class memory | |
Storage reliability | |
Stray current | |
stray-inductance imbalance | |
stress test methods | |
Surface scanning radiation emission measurement Magnetic field measurement | |
switched reluctance drive system | |
switched reluctance motor | |
switching frequency reduction | |
System-level reliability | |
T | |
TC | |
TCAD | |
TCAD simulation | |
TDDB | |
technologies | |
technology | |
Technology node | |
temperature | |
Temperature cycling | |
temperature dependence modeling | |
temperature estimation | |
Temperature monitoring | |
temperature variation | |
Terrestrial cosmic radiation | |
Terrestrial cosmic rays | |
the equivalent resistance | |
the Wiener process | |
thermal | |
Thermal aging | |
Thermal and Mechanical Simulation | |
Thermal cycling | |
thermal interface material | |
thermal loading | |
thermal management | |
Thermal modeling | |
Thermal network | |
thermal runaway | |
Thermal shocks | |
thermal stability | |
thermal stress | |
ThermoFisher | |
thermomechanical fatigue | |
thermoset injection moulding | |
Thermosonic copper wire bonding | |
thin film metallization | |
Though SiC | |
Three dimensional SRAM | |
Threshold voltage distribution | |
threshold voltage distribution test | |
threshold voltage rise phenomena | |
throughput | |
TID radiation | |
Time-dependent convex model process | |
Time-dependent PCE | |
Time-dependent RBDO | |
time-domain analysis | |
time-domain stability analysis | |
timing error detection | |
TiW diffusion barrier | |
TLP | |
Tomography | |
total ionizing dose effects | |
transient dose rate effects | |
transient drain current | |
Transient thermal response | |
Transmission electron microscopy techiques | |
trap | |
trap carrier | |
trapping effects | |
Traps | |
Trench-gate SiC-MOSFET | |
TRIAC | |
triple modular redundancy | |
Triple-Modular Redundancy | |
Trsnforming | |
TSEP | |
TSV | |
U | |
uHAST | |
ultra | |
ultralow-voltage SRAM | |
Ultrasonic wave | |
Uncertainties | |
Unclamped Inductive Switching | |
Urban rail transit | |
usage variation | |
V | |
variability | |
Vbd | |
vce-method | |
Vertical | |
vertical MOS devices | |
Vibration | |
virtual junction temperature measurement | |
vsd-method | |
VTH transient | |
VTH variation | |
W | |
Wavelet | |
Weibull | |
Weibull statistics | |
wideband gap | |
wind power system | |
wind turbine | |
Wire Bond | |
X | |
X-ray irradiation | |
Z | |
Zynq-7000 |