TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
| - | |
| - Copper layer | |
| - Packaging | |
| - PCB-Embedded | |
| - Power module | |
| - Silver sintering | |
| 2 | |
| 2N | |
| 3 | |
| 3-D thermal network model | |
| 3D flash memory | |
| 3D ICs | |
| 3D Image processing | |
| 3D NAND flash | |
| 3D NAND flash memory | |
| 4 | |
| 4N | |
| A | |
| accelerated aging test | |
| accelerated life tests | |
| Accelerated Stress Testing | |
| accelerated testing | |
| acceptor ionization | |
| Accumulative testing | |
| acoustic microscopy | |
| active thermal management | |
| Adaptive Bias | |
| Adaptive DE | |
| Addtive manufacturing | |
| adhesion strength degradation | |
| AEC-Q | |
| Aging | |
| Aging indicator | |
| AIA | |
| AlGaN barrier | |
| AlGaN/GaN HEMTs | |
| ALT | |
| Aluminum Electrolytic Capacitor | |
| Analog simulation | |
| analysis of catastrophic failure | |
| analysis of degradation data | |
| analytical method | |
| Anisotropy | |
| anneal optimization | |
| AP-SoC | |
| Application Stress Testing | |
| Arrhenius | |
| Artificial intelligence | |
| asynchronous circuits | |
| Au wire | |
| AuPd wire | |
| Automatic Defect detection | |
| automotive electronics packaging | |
| avalanche breakdown | |
| avalanche mode | |
| Avalanche Ruggedness | |
| AXI | |
| B | |
| Backside Si trenching | |
| Ball bond shear test | |
| BAMFIT | |
| Bar | |
| Battery degradation | |
| Bayesian parameter estimation | |
| BEOL thermal distribution | |
| BIMOS transistor | |
| body diode SiC MOSFET | |
| Bond wire | |
| Bond wires degradation | |
| Bonding | |
| bonding wire | |
| breakdown meachanisms | |
| bridges in parallel | |
| BTI | |
| BTS | |
| buffer trapping | |
| Burn-in | |
| C | |
| C-rate dependency | |
| C-V analysis | |
| Capacitive RF-MEMS | |
| Capacitors | |
| Capasitive MEMS | |
| Carrier multiplication factor | |
| carrier profiling | |
| Cascode | |
| CdTe solar cells | |
| CFD | |
| channel size | |
| Charge trapping | |
| Circuit Design | |
| Circuit-level design | |
| clustering | |
| CMOS | |
| CMUT | |
| cohesive zone model | |
| Cold plate | |
| collector-emitter voltage | |
| Combined aging | |
| compact | |
| Compact thermal network | |
| compensation | |
| complex system | |
| component | |
| Component-of-the-Shelf (COTS) | |
| Condition monitoring | |
| Conducted EMI | |
| Connectors | |
| constitutive model | |
| Contact Resistance | |
| converters | |
| converters in parallel | |
| copper contacts degradation | |
| Copula function | |
| Correlative microscopy | |
| corrosion | |
| Cortex-M4 processor | |
| COTS | |
| counterfeit detection | |
| counterfeit electronics | |
| coupling liquid | |
| Crack | |
| crack growth | |
| Crack Propagation | |
| Cracks | |
| Critical energy | |
| cross-sectional nanoindentation | |
| Crystal Defects | |
| crystalline silicon solar cell | |
| Cu-Al ball bond | |
| current balance | |
| current collapse | |
| current filament | |
| Current Flow Reversal Control | |
| Current reference circuit | |
| current sampling delay | |
| current surge | |
| cyclic stress test in design | |
| D | |
| damage | |
| damage effects | |
| Damage Mechanism | |
| Damage Model | |
| Damage Model Calibration | |
| Damage Model Fitting | |
| Damage recovery | |
| DC shift | |
| DC/DC | |
| DDR4 memory | |
| de-trapped carrier | |
| Deep levels | |
| Defect | |
| Defect oriented testing | |
| Defects | |
| defects behaviour under electron beam irradation | |
| defects reduction | |
| Degradation | |
| Degradation Monitoring | |
| degradation process | |
| Derating factor | |
| devices | |
| Diamond | |
| Die attach | |
| dielectric | |
| Dielectric charging | |
| different thickness CdTe | |
| different thickness Cu | |
| digital circuits | |
| digital twin | |
| Diode-clamped three-level inverter; | |
| direct bonded copper layout | |
| discolations | |
| Double Pulse | |
| double-sided cooled | |
| DPA | |
| Drift zone | |
| dye penetrant test | |
| Dynamic characteristics | |
| dynamic operational condition | |
| Dynamic R_DSON | |
| dynamic RDSon | |
| dynamic recurrent neural network | |
| Dynamic Response | |
| E | |
| E-Mode | |
| Effective temperature | |
| Electrical contact resistance | |
| electrical ruggedness | |
| electrification projects | |
| electro-thermal model | |
| electro-thermal modelling | |
| electrochemical impedance spectroscopy | |
| electrochemical plating | |
| electroluminescence | |
| electromigration | |
| Electron devices | |
| electronic converters | |
| electronic devices | |
| Electronic failure analysis | |
| electronics | |
| emc | |
| Emission microscopy | |
| Emission simulation | |
| End-pointing | |
| Energy-absorption impedance | |
| Enhancing Reliability | |
| equivalent input disturbance; | |
| error | |
| error detecting scheme | |
| error detection and correction | |
| ESD | |
| established technologies | |
| Etch selectivity | |
| Evaluation | |
| Excitation control modes | |
| Experimental platform based on FPGA | |
| experiments | |
| Extended Drain MOSFET | |
| F | |
| Failure Analyses | |
| Failure analysis | |
| Failure Analysis Tool | |
| Failure diagnosis | |
| failure mechanism | |
| Failure modes | |
| Failure rate | |
| Fault diagnosis | |
| fault injection | |
| Fault isolation | |
| Fault tolerance | |
| fault-diagnosis | |
| Fault-tolerant control | |
| FBGA solder ball defect | |
| FC PVC | |
| FD-SOI | |
| FDSOI | |
| FE Simulations | |
| FEA | |
| FEM | |
| FEM Simulations | |
| FEOL TDDB | |
| ferroelectric tunneling-field-effect-transistor | |
| FGPA | |
| Fiber optic diamond sensor probe | |
| Field emission | |
| Field Plate failure | |
| field plate type UMOSFET | |
| field programmable gate array | |
| film | |
| FinFET | |
| Finite Element Methods | |
| Finite element modeling | |
| finite element simulation | |
| Flash memory cell | |
| flexible lithium ion battery | |
| Floquet theory | |
| fluoresence | |
| fluorocarbon | |
| FPGA | |
| Fretting wear | |
| Front-end time dependent dielectric breakdown | |
| G | |
| Gallium Nitride | |
| GaN | |
| GaN HEMT | |
| GaN HEMTs | |
| GaN High Electron Mobility Transistors (HEMTs) | |
| GaN micropipes | |
| GaN Power amplifiers | |
| GaN power HEMT | |
| GaN vertical | |
| GaN-HEMTs | |
| gate contact length | |
| Gate driver | |
| gate oxide | |
| Gate threshold voltage instability | |
| gate trapping | |
| gate trench module | |
| gate-drive circuits | |
| Gated diode | |
| Gaussian Process Regression | |
| GeSbTe | |
| GeTe | |
| GH50 | |
| glass | |
| GPU | |
| Graphene | |
| gray market | |
| H | |
| H5 inverter | |
| Hamming code | |
| Hard Switching | |
| hardening techniques | |
| Heatsink | |
| heavy ion | |
| Hemt | |
| High Frequency (100 kHz) | |
| high humidity high temperature power cycling | |
| High power module | |
| High sensitivity measurement | |
| high temperature | |
| high temperature electronics | |
| High temperature reverse bias | |
| high-K | |
| Hopping conduction | |
| Hot Carriers | |
| Hot Electrons | |
| Hot-Carrier | |
| hot-electron | |
| Hotspot | |
| HTOL | |
| HTRB | |
| HTSL | |
| Hybrid modulation | |
| I | |
| I-V characteristic | |
| IC debug | |
| IEMI | |
| IGBT | |
| IGBT module | |
| IGBT Power Module | |
| IGBT Semiconductors | |
| IGBTs | |
| Image Alignment | |
| impedance measurements | |
| impedance-source inverter | |
| Improved DC Current Flow Controller (CFC) | |
| Improved Ideal DC Current Source | |
| Incremental Capacity | |
| Inspection | |
| insulated gate bipolar transistor | |
| Insulated gate bipolar transistor modules (IGBT) | |
| Integrating electric | |
| inter-turn short circuit | |
| interface defect | |
| Interface reliability | |
| interference between word lines | |
| Intermittent errors | |
| internal gate resistance | |
| Intersymbol interference(ISI) | |
| Inverter | |
| inverters | |
| Ion flux data | |
| ISA extension | |
| isopropanol | |
| J | |
| J integral | |
| junction breakdown junction engineering | |
| Junction temperature | |
| L | |
| l=Lifetime Prediction | |
| Large-signal EMI | |
| Laser | |
| Latent damages | |
| layouts | |
| Lead-free solder joint | |
| lectronic equipment | |
| LFN | |
| Li-ion battery | |
| LICA | |
| life prediction | |
| lifetime | |
| lifetime modelling | |
| Lifetime prediction | |
| Lifetime prognostic | |
| Light Emitting Diode | |
| Limitations | |
| Lithium-ion battery | |
| lithium-ion battery discharge time | |
| LLC resonant converter | |
| Local deep level transient spectroscopy | |
| Logical Masking Effect | |
| long short-term memory | |
| long-term reliability | |
| Long-term reliability prediction | |
| low power | |
| low power design | |
| low TMR and low voltage | |
| Lumen Degradation | |
| M | |
| M3D | |
| Machine learning | |
| machine side converter (MSC) | |
| magnesium concentration | |
| magnetic field imaging | |
| Majority voter | |
| Manufacture parameters | |
| materials for harsh environments | |
| matrix eigenvalue | |
| mechanical | |
| mechanical fatigue | |
| mechanical properties | |
| MEMS | |
| Meshed Multi-terminal HVDC (M2TDC) | |
| Metal etch | |
| Metallized film capacitor (MFC) | |
| mibot | |
| micoelectronics reliability | |
| Microelectronics reliability | |
| microstructure | |
| Mission Profile | |
| mixed-signal simulation | |
| mobile ion | |
| mode identification | |
| model-based prognostics | |
| modeling | |
| modified Engelmaier fatigue model | |
| modular multilevel converter (MMC) | |
| Modular Test System | |
| modulation strategy | |
| Moisture | |
| moisture uptake | |
| Monte Carlo analysis | |
| MOSFET | |
| Motor drives | |
| multi-chip SiC power module | |
| multi-field coupling | |
| Multi-layer ceramic capacitors | |
| multi-performance degradation products | |
| Multi-phase PMSM | |
| multi-switches faults | |
| multiphysics | |
| multiple failure mechanisms | |
| Multiple quantum well | |
| Multiple short-circuits | |
| MUT | |
| N | |
| Nanoindentation | |
| nanolaminate | |
| Nickel | |
| nMOS | |
| non-intrusive sensing method | |
| Non-volatile memory | |
| Nondestructive evaluation | |
| NTC | |
| O | |
| Off-grid cascade photovoltaic-storage system | |
| OFF-state trapping | |
| Online junction temperature estimation | |
| operating mode | |
| Operating modes analysis | |
| Optical Interference fringe | |
| P | |
| p-GaN gate | |
| p-type GaN HEMT | |
| package | |
| Packaging | |
| parallel connection | |
| paralleled LLC resonant converter system | |
| parasitic parameters | |
| partial discharge | |
| particle swarm optimization | |
| passivation | |
| PCB Embedding | |
| PCB-Embedding | |
| PCC wire | |
| PCM | |
| PDSOI | |
| Peak Tracking | |
| Performance | |
| performance degradation | |
| performance degradation evaluation | |
| permanent-magnet synchronous generator (PMSG) | |
| pGaN HEMT | |
| phase change memory | |
| Phase transformation | |
| photoemission | |
| photomultiplier tube | |
| Photovoltaic (PV) module | |
| Physical Model | |
| physics of failure model | |
| Piezoresistive transduction | |
| Pin Assignment | |
| Planar-gate SiC-MOSFET | |
| plasma generation | |
| Platinum | |
| PMSM | |
| Point defects | |
| Polarization Super Junction Technology | |
| positive charge storage | |
| potential-induced degradation | |
| Power | |
| Power converter | |
| Power Cycling | |
| Power cycling test | |
| Power device | |
| Power devices | |
| Power die | |
| Power electronics | |
| Power modules | |
| Power Modules Aging | |
| Power semiconductor device | |
| Power SiC device reliability | |
| Power supplies | |
| Pre-insertion scheme | |
| Press-pack | |
| Pressure and liquid tolerant | |
| pressure sensor | |
| Process variability | |
| process variation | |
| Prognostics | |
| proton | |
| Pull test | |
| pulsed drain current | |
| pulsed I-V | |
| punch-through effect | |
| PV inverter | |
| PV modules | |
| PV panels | |
| PWM | |
| Q | |
| quality GaN | |
| quasi | |
| quasi Z source inverter | |
| R | |
| Radiation | |
| radiation effect | |
| Radiation immunity | |
| Radiation-Hardening-By-Design (RHBD) | |
| Rail potential | |
| real-time monitoring | |
| Rectifier bridge | |
| Rectifier diode | |
| Redistribution of charge | |
| relaxation mechanism | |
| Reliability | |
| reliability analysis | |
| Reliability assessment | |
| Reliability based design optimization | |
| reliability evaluation | |
| Reliability for Subsea Power Semiconductors | |
| reliability issue | |
| Reliability modeling | |
| Reliability Optimization | |
| Reliability Simulation | |
| Reliability testing and analysis | |
| reliability; | |
| repetitive control; | |
| Repetitive critical energy | |
| responsivity | |
| retention time | |
| Reverse conduction | |
| Review | |
| RF MEMS switches | |
| RF PA | |
| Ring Oscillator | |
| roadmap | |
| robotic | |
| Robustness | |
| RON increase | |
| rotatory-wing unmanned aerial vehicles | |
| Row hammer | |
| Rsd increase | |
| RTN | |
| Ruggedness | |
| S | |
| sample size | |
| Sampling | |
| scanning nonlinear dielectric microscopy | |
| SCM | |
| SCR | |
| SDRAM | |
| SEE | |
| SEGR | |
| SEL | |
| self-activated BIST | |
| Self-Switching Diodes | |
| semi-full-bridge (SFB) submodule | |
| semi-insulating | |
| semiconductor | |
| semiconductor DC circuit breaker | |
| Semiconductor material | |
| sensing current | |
| sensing margin | |
| sensitivity analysis | |
| sensitivity evaluation of single event transient | |
| sensor reliability | |
| SET | |
| SEU | |
| SEUs | |
| SHE | |
| Shear Test | |
| shoot-through protection | |
| short channel effects | |
| Short circuit | |
| Short-circuit | |
| short-circuit capability | |
| Short-circuit degradation | |
| Short-circuit robustness | |
| shrinking | |
| Si heterojunction solar cell | |
| Si_MOSFET | |
| SiC Cascode | |
| SiC JFET | |
| SiC MOSFET | |
| SiC MOSFETs | |
| SiC power devices | |
| SiC Power MOSFET | |
| SiC power MOSFETs | |
| SiC-JFET | |
| Signal Probability | |
| signal rise time | |
| significantly | |
| Silicidation | |
| silicon | |
| silicon carbide | |
| Silicon Carbide (SiC) | |
| Silicon nanogauges | |
| Silicon Nitride | |
| Silicone gel | |
| Simplified Hybrid Modelling Approach | |
| simulation | |
| simulation method | |
| simulation methodology | |
| simulation verification | |
| single event effect | |
| Single Event Effects | |
| single event upset | |
| Single Event Upset(SEU) | |
| Single-defects | |
| Single-Event Effects | |
| Single-Event Transient | |
| sinter silver | |
| Sintered Ag | |
| smarprobe | |
| Smart-Power | |
| Smartgrids | |
| smt | |
| SnO2 gas sensor | |
| SoC | |
| Soft error | |
| Soft error rate | |
| Soft gamma radiation | |
| soft switching operation | |
| Soiling sensor | |
| Solar cells | |
| Solar particle event | |
| solder ball void | |
| Solder crack | |
| Solder Fatigue | |
| solder joint | |
| solder joints | |
| Solderless packaging | |
| solutions | |
| Space | |
| Space applications | |
| Spectrometer chain | |
| Speed-falling stage | |
| spin transfer torque magnetic random access memory (STT-MRAM) | |
| SRAM | |
| SST’s structural composition | |
| Stability | |
| stability analysis | |
| standard cells | |
| state of charge | |
| State of Health | |
| static | |
| Stator voltage establishment | |
| storage | |
| storage class memory | |
| Storage reliability | |
| Stray current | |
| stray-inductance imbalance | |
| stress test methods | |
| Surface scanning radiation emission measurement Magnetic field measurement | |
| switched reluctance drive system | |
| switched reluctance motor | |
| switching frequency reduction | |
| System-level reliability | |
| T | |
| TC | |
| TCAD | |
| TCAD simulation | |
| TDDB | |
| technologies | |
| technology | |
| Technology node | |
| temperature | |
| Temperature cycling | |
| temperature dependence modeling | |
| temperature estimation | |
| Temperature monitoring | |
| temperature variation | |
| Terrestrial cosmic radiation | |
| Terrestrial cosmic rays | |
| the equivalent resistance | |
| the Wiener process | |
| thermal | |
| Thermal aging | |
| Thermal and Mechanical Simulation | |
| Thermal cycling | |
| thermal interface material | |
| thermal loading | |
| thermal management | |
| Thermal modeling | |
| Thermal network | |
| thermal runaway | |
| Thermal shocks | |
| thermal stability | |
| thermal stress | |
| ThermoFisher | |
| thermomechanical fatigue | |
| thermoset injection moulding | |
| Thermosonic copper wire bonding | |
| thin film metallization | |
| Though SiC | |
| Three dimensional SRAM | |
| Threshold voltage distribution | |
| threshold voltage distribution test | |
| threshold voltage rise phenomena | |
| throughput | |
| TID radiation | |
| Time-dependent convex model process | |
| Time-dependent PCE | |
| Time-dependent RBDO | |
| time-domain analysis | |
| time-domain stability analysis | |
| timing error detection | |
| TiW diffusion barrier | |
| TLP | |
| Tomography | |
| total ionizing dose effects | |
| transient dose rate effects | |
| transient drain current | |
| Transient thermal response | |
| Transmission electron microscopy techiques | |
| trap | |
| trap carrier | |
| trapping effects | |
| Traps | |
| Trench-gate SiC-MOSFET | |
| TRIAC | |
| triple modular redundancy | |
| Triple-Modular Redundancy | |
| Trsnforming | |
| TSEP | |
| TSV | |
| U | |
| uHAST | |
| ultra | |
| ultralow-voltage SRAM | |
| Ultrasonic wave | |
| Uncertainties | |
| Unclamped Inductive Switching | |
| Urban rail transit | |
| usage variation | |
| V | |
| variability | |
| Vbd | |
| vce-method | |
| Vertical | |
| vertical MOS devices | |
| Vibration | |
| virtual junction temperature measurement | |
| vsd-method | |
| VTH transient | |
| VTH variation | |
| W | |
| Wavelet | |
| Weibull | |
| Weibull statistics | |
| wideband gap | |
| wind power system | |
| wind turbine | |
| Wire Bond | |
| X | |
| X-ray irradiation | |
| Z | |
| Zynq-7000 | |