ESREF 2016: 27TH EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS
PROGRAM

Days: Monday, September 19th Tuesday, September 20th Wednesday, September 21st Thursday, September 22nd

Monday, September 19th

View this program: with abstractssession overviewtalk overview

13:30-15:20 Session 1: Opening Session with Keynotes 1+2

Opening Session (Part 1) with Keynotes 1+2

Location: Einstein
13:30
Welcome to ESREF 2016 ( abstract )
14:00
22FDX and it's application in Energy Efficient Designs, Automotive and IoT - from foundry perspective ( abstract )
14:40
Automotive Electronics Roadmap and the Wish List on Electronics ( abstract )
15:40-16:40 Session 2: Opening Session - Exchange Papers

Opening Session (Part 2) - Exchange Papers

Location: Einstein
15:40
Quantitative model for post-program instabilities in filamentary RRAM ( abstract )
16:00
Asymmetric Low Temperature Bonding Structure Using Ultra-Thin Buffer Layer Technique for 3D Integration ( abstract )
16:20
Corrosion Mechanisms of Cu Bond Wires on AlSi Pads ( abstract )
16:40-18:40 Session : Exhibition Opening / Get-together / Drinks Reception

Exhibition Opening / Get-together / Drinks Reception

Location: Foyer
Tuesday, September 20th

View this program: with abstractssession overviewtalk overview

08:30-09:50 Session 3C: Progress in Failure Analysis Methods: Laser probing techniques
Location: Fraunhofer
08:30
Laser Voltage Probing – its value and the race against scaling (invited) ( abstract )
09:10
Automatic process for Time-Frequency scan of VLSI ( abstract )
09:30
Static logic state analysis by TLS on powered logic circuits: Three case studies for suspected stuck-at failure modes ( abstract )
09:30-10:50 Session 4A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Logic ICs and Memories - Part 1
Location: Einstein
09:30
Reliability Management – the central Enabler for Advanced Technologies in Automotive (invited) ( abstract )
10:10
Efficient reliability evaluation for combinational circuits ( abstract )
10:30
A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28nm FDSOI ( abstract )
09:30-10:50 Session 4B: Power Devices Reliability: Metallization and Interconnects
Location: Planck
09:30
Reliability aspects of copper metallization and interconnect technology for power devices (invited) ( abstract )
10:10
Power Cycling Test and Failure Analysis of Molded Intelligent Power IGBT Module under Different Temperature Swing Durations ( abstract )
10:30
Power electronic assemblies: thermo-mechanical degradations of gold-tin solder for attaching devices ( abstract )
09:50-10:50 Session 5: Exhibitor Workshop: Defect Localization and Nanoprobing
Location: Fraunhofer
09:50
3D LIT calibration tool development ( abstract )
10:00
Improvements on localisation techniques for high power devices ( abstract )
10:10
New phase Laser Voltage Imaging technique ( abstract )
10:20
Micromanipulators in Reliability Testing Environments: Fault Localization, Nanoprobing, and TEM Sample Preparation ( abstract )
10:30
Versatile probers for micro and nanoprobing ( abstract )
10:40
EBIC and EBAC/RCI techniques ( abstract )
11:10-11:50 Session 6A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Logic ICs and Memories - Part 1 (continued)
Location: Einstein
11:10
FPGA LUT delay degradation due to HCI : Experiment and simulation results ( abstract )
11:30
Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories ( abstract )
11:10-12:50 Session 6B: Power Devices Reliability: SiC Devices
Location: Planck
11:10
Gate oxide degradation of SiC MOSFET under short-circuit aging tests ( abstract )
11:30
Mission-profile-based stress analysis of bond-wires in SiC power modules ( abstract )
11:50
Lifetime Estimation of SiC MOSFETs under High Temperature Reverse Bias Test ( abstract )
12:10
Power Cycling Analysis Method for High Voltage SiC Diodes ( abstract )
12:30
Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules ( abstract )
11:10-12:50 Session 6C: Progress in Failure Analysis Methods: Nanoscale failure analysis
Location: Fraunhofer
11:10
Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale ( abstract )
11:30
Current Imaging, EBIC/EBAC, and Electrical Probing combined for fast and reliable in situ Electrical Fault Isolation ( abstract )
11:50
Electrical analysis on implantation-related defect by nanoprobing methodology ( abstract )
12:10
Cross-sectional Nanoprobing Fault Isolation Technique on Submicron Devices ( abstract )
12:30
Study on non-contact current path formation using charged particle beams ( abstract )
11:50-12:50 Session 7: Exhibitor Workshop:Sample Preparation
Location: Einstein
11:50
Sample Preparation with the X-Prep ( abstract )
12:00
Laser Decap : the sample prep Swiss Army Tool ( abstract )
12:10
SELA Sample Preparation Tools ( abstract )
12:20
Curtaining-Free Top-Down TEM Lamella Preparation from a Cutting Edge Integrated Circuit ( abstract )
12:30
Helios G4: Enabling breakthrough failure analysis for 7 nm design nodes ( abstract )
12:40
Preliminary Idea for Preparing 1000’s of TSV’s ( abstract )
12:50-13:50 Session 8: Poster Session for Tracks B / D / E / G
Location: Foyer 1. Floor
12:50
Numerical study of destruction phenomena for punch-through IGBTs under unclamped inductive switching ( abstract )
12:50
Accelerated Life Test of high luminosity blue LEDs ( abstract )
12:50
Reliability Design of Direct Liquid Cooled Power Semiconductor Module for Hybrid and Electric Vehicles ( abstract )
12:50
Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules ( abstract )
12:50
Effects of stress-loading test methods on the degradation of light-emitting diode modules ( abstract )
12:50
Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory ( abstract )
12:50
Novel heatsink for power semiconductor module using high thermal conductive graphite ( abstract )
12:50
Mechanisms of metallization degradation in high power diodes ( abstract )
12:50
Application of Laser Deprocessing Technique in PFA on Chemical Over-etched on Bond-pad Issue ( abstract )
12:50
Avalanche Robustness of SiC Schottky Diode ( abstract )
12:50
Application of Fast Laser Deprocessing Techniques on Large Cross-sectional View Area Sample with FIB-SEM Dual Beam System ( abstract )
12:50
Influence of I/O Oxide Process on the NBTI Performance of 28nm HfO2-Based HKMG p-MOSFETs ( abstract )
12:50
Numerical Investigation of the Effects of Phosphorus on the Mechanical Responses of [1 1 0]-oriented Silicon Nano-wires ( abstract )
12:50
Failure Rate Calculation Method for High Power Devices in Space Applications at Low Earth Orbit ( abstract )
12:50
Evolution of navigation and simulation tools in failure analysis ( abstract )
12:50
Elemental characterisation of 20nm structures in devices using new SEM-EDS technology ( abstract )
12:50
Automatized Failure Analysis of Tungsten Coated TSVs via Scanning Acoustic Microscopy ( abstract )
12:50
Improved Etching Recipe for Exposing Cu Wire allowing Reliable Stitch Pull ( abstract )
12:50
Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability ( abstract )
12:50
Lifetime and Manufacturability of Integrated Power Electronics ( abstract )
12:50
On the Prediction of Radiation-Induced SETs in Flash-based FPGAs ( abstract )
12:50
Online computation of IGBT on-state resistance for off-shelf three-phase two-level power converter systems ( abstract )
12:50
Fault isolation at P/N junction by nanoprober ( abstract )
12:50
Effect of H/Ar treatment on ZnO:B transparent conducting oxide for flexible a-Si:H/μc-Si:H photovoltaic modules under damp heat stress ( abstract )
12:50
Investigation of Temperature Variations on Analog/RF Linearity Performance of Stacked Gate GEWE-SiNW MOSFET for Improved Device Reliability ( abstract )
12:50
Improving the short circuit ruggedness of IGBTs ( abstract )
12:50
Comparison of Thermal Runaway Limits under Different Test Conditions Based on a 4.5 kV IGBT ( abstract )
12:50
Body diode reliability investigation of SiC power MOSFETs ( abstract )
12:50
Evaluation of Potential-Induced Degradation in Crystalline Si Solar Cells using Na-Fault Injection ( abstract )
15:10-16:50 Session 9A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Logic ICs and Memories - Part 2
Location: Einstein
15:10
A run-time built-in approach of TID test in SRAM based FPGAs ( abstract )
15:30
Reliability analysis of hybrid Spin Transfer Torque Magnetic Tunnel Junction/CMOS Majority Voters ( abstract )
15:50
Application of the Defect Clustering Model for Forming, SET and RESET Statistics in RRAM Devices ( abstract )
16:10
Resistive RAM Variability Monitoring using a Ring Oscillator based Test Chip ( abstract )
16:30
Permanent and Single Event Transient Faults Reliability Evaluation EDA tool ( abstract )
15:10-16:50 Session 9C: EFUG - Workshop (Part 1)
Location: Fraunhofer
15:10
Ga contamination in silicon by focused ion beam milling: Atom Probe Tomography and simulation with dynamic model ( abstract )
15:30
Micro mechanical robustness tests of 28nm BEOL layer stack ( abstract )
15:50
Laser based sample preparation for advanced packaging applications ( abstract )
16:10
Planar FIB Milling of Copper by using the Novel Rocking Stage Technology ( abstract )
16:30
Fast, Reliable, Intuitive TEM Sample Preparation using a Load-Lockable Platform Combined with Smart Control Software ( abstract )
15:50-16:50 Session 10: Exhibitor Workshop: Failure Analysis
Location: Planck
15:50
Introduction of MA-tek total solution FA ( abstract )
16:00
Failure Analysis and Failure Prevention on Ceramic Capacitors ( abstract )
16:10
New technology approaches in scanning acoustic microscopy for advanced failure analysis ( abstract )
16:20
Multiple Pass/Fail Detection Scheme ( abstract )
16:30
Below 10nm technology analysis solution ( abstract )
16:40
High Resolution Cathodoluminescence for Defect Inspection and Failure Analysis ( abstract )
17:10-18:10 Session 11B: Power Devices Reliability: Testing Methods
Location: Planck
17:10
Topologies for inverter like operation of power cycling tests ( abstract )
17:30
End of life and acceleration modelling for power diodes under High Temperature Reverse Bias stress ( abstract )
17:50
Internal processes in power semiconductors at virtual junction temperature measurement ( abstract )
17:10-18:10 Session 11C: EFUG - Workshop (Part 2)
Location: Fraunhofer
17:10
3D Inspection Solutions for 3D DEVICES ( abstract )
17:30
Innovative TEM sample Preparation on Helios G4 platform ( abstract )
17:50
FIB and P-FIB assisted sample preparation for in-situ TEM characterization ( abstract )
Wednesday, September 21st

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08:30-10:50 Session 12A: Semiconductor Reliability & Failure Mechanisms: FD-SOI and RRAM
Location: Planck
08:30
Device to circuit reliability correlations for Metal Gate / High-k transistors in scaled CMOS technologies (invited) ( abstract )
09:10
FDSOI and Bulk CMOS SRAM Cells Resilience to Radiation Effects ( abstract )
09:30
Performance vs. Reliability Adaptive Body Bias Scheme in 28nm & 14nm UTBB FDSOI nodes ( abstract )
09:50
Potentiality of Healing Techniques in Hot-Carrier Damaged 28nm FDSOI CMOS nodes ( abstract )
10:10
Electromagnetic susceptibility characterization of double SOI device ( abstract )
10:30
Analysis of Quantum Conductance, Read Disturb and Switching Statistics in HfO2 RRAM Using Conductive AFM ( abstract )
08:30-09:30 Session 12B: Failure mechanisms and precautions in plug connectors and relays: Tutorial
Location: Einstein
08:30
Failure mechanisms and precautions in plug connectors and relays ( abstract )
08:30-09:50 Session 12C: Student Research Speed Dating
Location: Fraunhofer
08:30
FEM Modelling of piezo- and thermo-mechanical interaction in GaN power devices – the twofold impact of metallization layers ( abstract )
08:40
Reliability of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si Substrate ( abstract )
08:50
Device reliability of Geiger-mode Single Photon Avalanche Diode ( abstract )
09:00
Photon Emission of MOSFET with Parasitic Bipolar Operation ( abstract )
09:10
Improvement of Failure Analysis equipments by incorporating signal/image processing tools ( abstract )
09:20
Investigating Stress Measurement Capabilities of GHz Scanning Acoustic Microscopy for 3D Failure Analysis ( abstract )
09:30
Impurities in electroplated Cu and void formation in Cu-Sn micro-connects ( abstract )
09:30-10:50 Session 13: EUFANET/CAM-Workshop "Automotive Electronics Systems Reliability" (Part 1)
Location: Einstein
09:30
The southeast automotive hub and Georgia Tech’s automotive electronics ecosystem ( abstract )
10:10
77Ghz Automotive RADAR in eWLB package: from consumer to automotive packaging ( abstract )
10:30
Reliability of automotive LED systems ( abstract )
09:50-10:50 Session 14: Reliability and Failure Mechanisms of special photonics and LED Devices: LED systems
Location: Fraunhofer
09:50
LED Degradation: from component to system (invited) ( abstract )
10:30
Transient thermal analysis for accelerated reliability testing of LEDs ( abstract )
11:10-13:50 Session 15: Panel Discussion + Keynote 3
Location: Einstein
11:10
Power and industry electronics – future perspectives for Europe ( abstract )
11:50
Reliability - becoming the key factor for electronics in Europe? (Panel Discussion) ( abstract )
14:50-15:30 Session 16A: Semiconductor Reliability & Failure Mechanisms: BTI
Location: Planck
14:50
Degradation and Recovery of variability due to BTI ( abstract )
15:10
Early Detection and Prediction of HKMG SRAM HTOL Performance by WLR PBTI Tests ( abstract )
14:50-16:30 Session 16B: EUFANET/CAM-Workshop "Automotive Electronics Systems Reliability" (Part 2)
Location: Einstein
14:50
Automotive Memory Trends and System Reliability Concepts ( abstract )
15:30
Powertrain electronics reliability ( abstract )
15:50
Requirements for Reliability and new Solutions for Transmission Control Units ( abstract )
16:10
Cu-wire Bond Reliability in Automotive Electronics ( abstract )
14:50-16:30 Session 16C: Reliability and Failure Mechanisms of special photonics and LED Devices: LED; laser diodes and VCSELs
Location: Fraunhofer
14:50
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs ( abstract )
15:10
Degradation of InGaN-based LEDs related to charge diffusion and build-up ( abstract )
15:30
ESD tests on 850 nm GaAs-based VCSELs ( abstract )
15:50
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes ( abstract )
16:10
Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes ( abstract )
15:30-16:30 Session 17: Exhibitor Workshop: Reliability Testing and Failure Analysis
Location: Planck
15:30
Reliability Testing ( abstract )
15:40
Fault Isolation at 5um Resolution using Electro-Optical TDR with 6ps Rise Time ( abstract )
15:50
Use of Lock-in Thermography and Magnetic Current Imaging as complemetary techniques for localization of shorts in GaN transistors ( abstract )
16:00
Scribing, Scribless and Cleaving Reinvented ( abstract )
16:10
Solutions for semiconductor failure analysis with SEM ( abstract )
16:20
Exhibitor Workshop: Reliability Testing - talk 3 ( abstract )
16:50-18:30 Session 18A: Semiconductor Reliability & Failure Mechanisms: Miscellaneous
Location: Planck
16:50
Plasma Process Induced Damage Detection by Fast Wafer Level Reliability Monitoring for Automotive Applications ( abstract )
17:10
Channel width dependence of AC stress on bulk nMOSFETs ( abstract )
17:30
Effects of voltage stress on the single event upset (SEU) response of 65 nm flip flop ( abstract )
17:50
Conductive filament formation at grain boundary locations in polycrystalline HfO2 based MIM stacks- Computational and Physical Insight ( abstract )
18:10
Microcontroller susceptibility variations to EFT burst during accelerated aging ( abstract )
16:50-18:30 Session 18B: EUFANET/CAM-Workshop "Automotive Electronics Systems Reliability" (Part 3)
Location: Einstein
16:50
Si IGBT reliability for HVs ( abstract )
17:10
Power modules in automotive powertrains: qualification and test ( abstract )
17:30
Reliability of inverters and DC Link capacitors for e-mobility ( abstract )
17:50
Estimation of IGBT power module reliability in pre-design phase ( abstract )
18:10
Safe cell, safe battery? Battery fire investigations using FMEA, FTA and practical experiments ( abstract )
16:50-18:30 Session 18C: Progress in Failure Analysis Methods: Novel non-destructive testing
Location: Fraunhofer
16:50
Copper Through Silicon Vias Studied by Photoelastic Scanning Infrared Microscopy ( abstract )
17:10
Investigating Stress Measurement Capabilities of GHz Scanning Acoustic Microscopy for 3D Failure Analysis ( abstract )
17:30
Detection and Analysis of Stress-induced Voiding in Al-Power lines by Acoustic GHz-Microscopy ( abstract )
17:50
Magnetic Field and Current Density Imaging using off-line Lock-In Analysis ( abstract )
18:10
Detection of cracks in multilayer ceramic capacitors by X-ray imaging ( abstract )
Thursday, September 22nd

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08:30-10:50 Session 19A: Reliability & Failure Mechanisms of MEMS and sensors
Location: Planck
08:30
Application of high frequency scanning acoustic microscopy for the failure analysis and reliability assessment of MEMS sensors (invited) ( abstract )
09:10
Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness ( abstract )
09:30
Effects of residual stresses on cracking and delamination risks of an avionics MEMS pressure sensor ( abstract )
09:50
A novel correlative model of failure mechanisms for evaluating MEMS devices reliability ( abstract )
10:10
Optimization of contact metallizations for reliable wafer level Au-Sn bonds ( abstract )
08:30-09:30 Session 19B: Reliability & Failure Mechanisms in Packages and Assembly: Tutorial
Location: Einstein
08:30
Tutorial: Creeping corrosion of copper on printed circuit board assemblies ( abstract )
09:30-10:50 Session 20A: Reliability & Failure Mechanisms in Packages and Assembly: Moisture and corrosion related studies
Location: Einstein
09:30
Effects of salt spray test on lead-free solder alloy ( abstract )
09:50
Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions ( abstract )
10:10
Moisture absorption by molding compounds under extreme conditions: impact on accelerated reliability tests ( abstract )
10:30
Effect of PCBA surface morphology and chemistry on water layer formation under humid conditions and corrosion reliability ( abstract )
09:30-10:50 Session 20B: Reliability & Failure Mechanisms of Wide Bandgap Devices: Microwave devices
Location: Fraunhofer
09:30
GaN devices: millimeter wave applications challenges (invited) ( abstract )
10:10
Continuous Time-Domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs ( abstract )
10:30
Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures ( abstract )
11:10-12:50 Session 21A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Miscellaneous
Location: Planck
11:10
Early life field failures in modern automotive electronics – An overview, root causes and precautions ( abstract )
11:30
Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors ( abstract )
11:50
Impact on Non-linear Capacitances on Transient Waveforms during System Level ESD Stress ( abstract )
12:10
Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests ( abstract )
12:30
Temperature rise measurement for power-loss comparison of an aluminium electrolytic capacitor between sinusoidal and square current injections ( abstract )
11:10-12:50 Session 21B: Reliability & Failure Mechanisms in Packages and Assembly: Reliability and Modelling
Location: Einstein
11:10
Reliability Evaluation of Donut-Tungsten-Via as an Element of the Highly Robust Metallization ( abstract )
11:30
Reliability Evaluation of Si-Dies due to Assembly Issues ( abstract )
11:50
Fatigue testing method for fine bond wires in an LQFP Package ( abstract )
12:10
Fast and Trusted Intrinsic Stress Measurement to Facilitate Improved Reliability Assessments ( abstract )
12:30
Delamination of polyimide/Cu films under mixed mode loading ( abstract )
11:10-12:50 Session 21C: Reliability & Failure Mechanisms of Wide Bandgap Devices: GaN power devices and deep level transient spectroscopy
Location: Fraunhofer
11:10
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis ( abstract )
11:30
UIS test of high-voltage GaN-HEMTs with p-type gate structure ( abstract )
11:50
Temperature Dependent Dynamic ON State Resistance in GaN on Si Based Normally OFF HFETs ( abstract )
12:10
Experimental study of the short-circuit robustness of 600V E-mode GaN transistors ( abstract )
12:30
Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy ( abstract )
12:50-13:50 Session 22: Poster Session for Tracks A / C / F / H
Location: Foyer 1. Floor
12:50
Power cycle reliability of Cu nanoparticle joint dependent on a mismatch of coefficients of thermal expansion ( abstract )
12:50
Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors ( abstract )
12:50
Device instability of amorphous InGaZnO thin film transistors with transparent source and drain ( abstract )
12:50
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain ( abstract )
12:50
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode ( abstract )
12:50
On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FDSOI technology ( abstract )
12:50
Instability of oxide thin film transistor under electrical-mechanical hybrid stress for foldable display ( abstract )
12:50
FESeR: a data-driven framework to enhance sensor reliability for the system condition monitoring ( abstract )
12:50
An in depth analysis of pull-up capacitance-voltage characteristic for dielectric charging assessment of MEMS capacitive switches ( abstract )
12:50
Role of Two-Dimensional Electron Gas (2DEG) in AlGaN/GaN High Electron Mobility Transistor (HEMT) ON-State Degradation ( abstract )
12:50
Structural disturbances in GaN HEMT layers as source of leakage current, influencing device performance and reliability ( abstract )
12:50
Component Reliability Importance assessment on complex systems using Credible Improvement Potential ( abstract )
12:50
Fatigue Life Prediction Model for Accelerated Testing of Electronic Components under Non-Gaussian Random Vibration Excitations ( abstract )
12:50
DRES: Data recovery for condition monitoring to enhance system reliability ( abstract )
12:50
The radiation test based assessment of process quality and reliability for conventional 65-nm CMOS technology ( abstract )
12:50
Chemical rate phenomenon approach applied to Lithium battery capacity fade estimation ( abstract )
12:50
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress ( abstract )
12:50
Requirements for the Application of ECUs in E-mobility Originally Qualified for Gasoline Cars ( abstract )
15:10-15:40 Session 23: Closing Ceremony
Location: Einstein
15:10
Best Paper / Best Poster Awards - ESREF 2016 ( abstract )
15:30
Advance Information on ESREF 2017 ( abstract )