PROGRAM
Days: Monday, September 19th Tuesday, September 20th Wednesday, September 21st Thursday, September 22nd
Monday, September 19th
View this program: with abstractssession overviewtalk overview
13:30-15:20 Session 1: Opening Session with Keynotes 1+2
Opening Session (Part 1) with Keynotes 1+2
Chair:
Location: Einstein
13:30 | Welcome to ESREF 2016 ( abstract ) |
14:00 | 22FDX and it's application in Energy Efficient Designs, Automotive and IoT - from foundry perspective ( abstract ) |
14:40 | Automotive Electronics Roadmap and the Wish List on Electronics ( abstract ) |
15:40-16:40 Session 2: Opening Session - Exchange Papers
Opening Session (Part 2) - Exchange Papers
Chair:
Location: Einstein
15:40 | Quantitative model for post-program instabilities in filamentary RRAM ( abstract ) |
16:00 | Asymmetric Low Temperature Bonding Structure Using Ultra-Thin Buffer Layer Technique for 3D Integration ( abstract ) |
16:20 | Corrosion Mechanisms of Cu Bond Wires on AlSi Pads ( abstract ) |
16:40-18:40 Session : Exhibition Opening / Get-together / Drinks Reception
Exhibition Opening / Get-together / Drinks Reception
Chair:
Location: Foyer
Tuesday, September 20th
View this program: with abstractssession overviewtalk overview
08:30-09:30 Session 3A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Tutorial
.
Chairs:
Location: Einstein
08:30 | Fast Wafer Level Reliability Monitoring as a tool to achieve automotive quality for a wafer process ( abstract ) |
08:30-09:30 Session 3B: Power Devices Reliability: Tutorial
Chairs:
Location: Planck
08:30 | 10 Years Robustness Validation ( abstract ) |
08:30-09:50 Session 3C: Progress in Failure Analysis Methods: Laser probing techniques
Chairs:
Location: Fraunhofer
08:30 | Laser Voltage Probing – its value and the race against scaling (invited) ( abstract ) |
09:10 | Automatic process for Time-Frequency scan of VLSI ( abstract ) |
09:30 | Static logic state analysis by TLS on powered logic circuits: Three case studies for suspected stuck-at failure modes ( abstract ) |
09:30-10:50 Session 4A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Logic ICs and Memories - Part 1
Chairs:
Location: Einstein
09:30 | Reliability Management – the central Enabler for Advanced Technologies in Automotive (invited) ( abstract ) |
10:10 | Efficient reliability evaluation for combinational circuits ( abstract ) |
10:30 | A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28nm FDSOI ( abstract ) |
09:30-10:50 Session 4B: Power Devices Reliability: Metallization and Interconnects
Chairs:
Location: Planck
09:30 | Reliability aspects of copper metallization and interconnect technology for power devices (invited) ( abstract ) |
10:10 | Power Cycling Test and Failure Analysis of Molded Intelligent Power IGBT Module under Different Temperature Swing Durations ( abstract ) |
10:30 | Power electronic assemblies: thermo-mechanical degradations of gold-tin solder for attaching devices ( abstract ) |
09:50-10:50 Session 5: Exhibitor Workshop: Defect Localization and Nanoprobing
Chair:
Location: Fraunhofer
09:50 | 3D LIT calibration tool development ( abstract ) |
10:00 | Improvements on localisation techniques for high power devices ( abstract ) |
10:10 | New phase Laser Voltage Imaging technique ( abstract ) |
10:20 | Micromanipulators in Reliability Testing Environments: Fault Localization, Nanoprobing, and TEM Sample Preparation ( abstract ) |
10:30 | Versatile probers for micro and nanoprobing ( abstract ) |
10:40 | EBIC and EBAC/RCI techniques ( abstract ) |
11:10-11:50 Session 6A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Logic ICs and Memories - Part 1 (continued)
Chairs:
Location: Einstein
11:10 | FPGA LUT delay degradation due to HCI : Experiment and simulation results ( abstract ) |
11:30 | Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories ( abstract ) |
11:10-12:50 Session 6B: Power Devices Reliability: SiC Devices
Chairs:
Location: Planck
11:10 | Gate oxide degradation of SiC MOSFET under short-circuit aging tests ( abstract ) |
11:30 | Mission-profile-based stress analysis of bond-wires in SiC power modules ( abstract ) |
11:50 | Lifetime Estimation of SiC MOSFETs under High Temperature Reverse Bias Test ( abstract ) |
12:10 | Power Cycling Analysis Method for High Voltage SiC Diodes ( abstract ) |
12:30 | Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules ( abstract ) |
11:10-12:50 Session 6C: Progress in Failure Analysis Methods: Nanoscale failure analysis
Chair:
Location: Fraunhofer
11:10 | Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale ( abstract ) |
11:30 | Current Imaging, EBIC/EBAC, and Electrical Probing combined for fast and reliable in situ Electrical Fault Isolation ( abstract ) |
11:50 | Electrical analysis on implantation-related defect by nanoprobing methodology ( abstract ) |
12:10 | Cross-sectional Nanoprobing Fault Isolation Technique on Submicron Devices ( abstract ) |
12:30 | Study on non-contact current path formation using charged particle beams ( abstract ) |
11:50-12:50 Session 7: Exhibitor Workshop:Sample Preparation
Chair:
Location: Einstein
11:50 | Sample Preparation with the X-Prep ( abstract ) |
12:00 | Laser Decap : the sample prep Swiss Army Tool ( abstract ) |
12:10 | SELA Sample Preparation Tools ( abstract ) |
12:20 | Curtaining-Free Top-Down TEM Lamella Preparation from a Cutting Edge Integrated Circuit ( abstract ) |
12:30 | Helios G4: Enabling breakthrough failure analysis for 7 nm design nodes ( abstract ) |
12:40 | Preliminary Idea for Preparing 1000’s of TSV’s ( abstract ) |
12:50-13:50 Session 8: Poster Session for Tracks B / D / E / G
Chair:
Location: Foyer 1. Floor
12:50 | Numerical study of destruction phenomena for punch-through IGBTs under unclamped inductive switching ( abstract ) |
12:50 | Accelerated Life Test of high luminosity blue LEDs ( abstract ) |
12:50 | Reliability Design of Direct Liquid Cooled Power Semiconductor Module for Hybrid and Electric Vehicles ( abstract ) |
12:50 | Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules ( abstract ) |
12:50 | Effects of stress-loading test methods on the degradation of light-emitting diode modules ( abstract ) |
12:50 | Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory ( abstract ) |
12:50 | Novel heatsink for power semiconductor module using high thermal conductive graphite ( abstract ) |
12:50 | Mechanisms of metallization degradation in high power diodes ( abstract ) |
12:50 | Application of Laser Deprocessing Technique in PFA on Chemical Over-etched on Bond-pad Issue ( abstract ) |
12:50 | Avalanche Robustness of SiC Schottky Diode ( abstract ) |
12:50 | Application of Fast Laser Deprocessing Techniques on Large Cross-sectional View Area Sample with FIB-SEM Dual Beam System ( abstract ) |
12:50 | Influence of I/O Oxide Process on the NBTI Performance of 28nm HfO2-Based HKMG p-MOSFETs ( abstract ) |
12:50 | Numerical Investigation of the Effects of Phosphorus on the Mechanical Responses of [1 1 0]-oriented Silicon Nano-wires ( abstract ) |
12:50 | Failure Rate Calculation Method for High Power Devices in Space Applications at Low Earth Orbit ( abstract ) |
12:50 | Evolution of navigation and simulation tools in failure analysis ( abstract ) |
12:50 | Elemental characterisation of 20nm structures in devices using new SEM-EDS technology ( abstract ) |
12:50 | Automatized Failure Analysis of Tungsten Coated TSVs via Scanning Acoustic Microscopy ( abstract ) |
12:50 | Improved Etching Recipe for Exposing Cu Wire allowing Reliable Stitch Pull ( abstract ) |
12:50 | Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability ( abstract ) |
12:50 | Lifetime and Manufacturability of Integrated Power Electronics ( abstract ) |
12:50 | On the Prediction of Radiation-Induced SETs in Flash-based FPGAs ( abstract ) |
12:50 | Online computation of IGBT on-state resistance for off-shelf three-phase two-level power converter systems ( abstract ) |
12:50 | Fault isolation at P/N junction by nanoprober ( abstract ) |
12:50 | Effect of H/Ar treatment on ZnO:B transparent conducting oxide for flexible a-Si:H/μc-Si:H photovoltaic modules under damp heat stress ( abstract ) |
12:50 | Investigation of Temperature Variations on Analog/RF Linearity Performance of Stacked Gate GEWE-SiNW MOSFET for Improved Device Reliability ( abstract ) |
12:50 | Improving the short circuit ruggedness of IGBTs ( abstract ) |
12:50 | Comparison of Thermal Runaway Limits under Different Test Conditions Based on a 4.5 kV IGBT ( abstract ) |
12:50 | Body diode reliability investigation of SiC power MOSFETs ( abstract ) |
12:50 | Evaluation of Potential-Induced Degradation in Crystalline Si Solar Cells using Na-Fault Injection ( abstract ) |
15:10-16:50 Session 9A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Logic ICs and Memories - Part 2
Chairs:
Location: Einstein
15:10 | A run-time built-in approach of TID test in SRAM based FPGAs ( abstract ) |
15:30 | Reliability analysis of hybrid Spin Transfer Torque Magnetic Tunnel Junction/CMOS Majority Voters ( abstract ) |
15:50 | Application of the Defect Clustering Model for Forming, SET and RESET Statistics in RRAM Devices ( abstract ) |
16:10 | Resistive RAM Variability Monitoring using a Ring Oscillator based Test Chip ( abstract ) |
16:30 | Permanent and Single Event Transient Faults Reliability Evaluation EDA tool ( abstract ) |
15:10-15:50 Session 9B: Power Devices Reliability: Passives
Chair:
Location: Planck
15:10 | 200V FRED diode with superior ESD capability ( abstract ) |
15:30 | Charging–discharging characteristics of a wound aluminum polymer capacitor ( abstract ) |
15:10-16:50 Session 9C: EFUG - Workshop (Part 1)
Chairs:
Location: Fraunhofer
15:10 | Ga contamination in silicon by focused ion beam milling: Atom Probe Tomography and simulation with dynamic model ( abstract ) |
15:30 | Micro mechanical robustness tests of 28nm BEOL layer stack ( abstract ) |
15:50 | Laser based sample preparation for advanced packaging applications ( abstract ) |
16:10 | Planar FIB Milling of Copper by using the Novel Rocking Stage Technology ( abstract ) |
16:30 | Fast, Reliable, Intuitive TEM Sample Preparation using a Load-Lockable Platform Combined with Smart Control Software ( abstract ) |
15:50-16:50 Session 10: Exhibitor Workshop: Failure Analysis
Chair:
Location: Planck
15:50 | Introduction of MA-tek total solution FA ( abstract ) |
16:00 | Failure Analysis and Failure Prevention on Ceramic Capacitors ( abstract ) |
16:10 | New technology approaches in scanning acoustic microscopy for advanced failure analysis ( abstract ) |
16:20 | Multiple Pass/Fail Detection Scheme ( abstract ) |
16:30 | Below 10nm technology analysis solution ( abstract ) |
16:40 | High Resolution Cathodoluminescence for Defect Inspection and Failure Analysis ( abstract ) |
17:10-18:10 Session 11A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Space and Radiation
Chairs:
Location: Einstein
17:10 | Natural Radiation Events in CCD Imagers at Ground Level ( abstract ) |
17:30 | Single Event Transient Acquisition And Mapping For Space Device Characterization ( abstract ) |
17:10-18:10 Session 11B: Power Devices Reliability: Testing Methods
Chairs:
Location: Planck
17:10 | Topologies for inverter like operation of power cycling tests ( abstract ) |
17:30 | End of life and acceleration modelling for power diodes under High Temperature Reverse Bias stress ( abstract ) |
17:50 | Internal processes in power semiconductors at virtual junction temperature measurement ( abstract ) |
17:10-18:10 Session 11C: EFUG - Workshop (Part 2)
Chairs:
Location: Fraunhofer
17:10 | 3D Inspection Solutions for 3D DEVICES ( abstract ) |
17:30 | Innovative TEM sample Preparation on Helios G4 platform ( abstract ) |
17:50 | FIB and P-FIB assisted sample preparation for in-situ TEM characterization ( abstract ) |
Wednesday, September 21st
View this program: with abstractssession overviewtalk overview
08:30-10:50 Session 12A: Semiconductor Reliability & Failure Mechanisms: FD-SOI and RRAM
Chairs:
Location: Planck
08:30 | Device to circuit reliability correlations for Metal Gate / High-k transistors in scaled CMOS technologies (invited) ( abstract ) |
09:10 | FDSOI and Bulk CMOS SRAM Cells Resilience to Radiation Effects ( abstract ) |
09:30 | Performance vs. Reliability Adaptive Body Bias Scheme in 28nm & 14nm UTBB FDSOI nodes ( abstract ) |
09:50 | Potentiality of Healing Techniques in Hot-Carrier Damaged 28nm FDSOI CMOS nodes ( abstract ) |
10:10 | Electromagnetic susceptibility characterization of double SOI device ( abstract ) |
10:30 | Analysis of Quantum Conductance, Read Disturb and Switching Statistics in HfO2 RRAM Using Conductive AFM ( abstract ) |
08:30-09:30 Session 12B: Failure mechanisms and precautions in plug connectors and relays: Tutorial
Chairs:
Location: Einstein
08:30 | Failure mechanisms and precautions in plug connectors and relays ( abstract ) |
08:30-09:50 Session 12C: Student Research Speed Dating
Chair:
Location: Fraunhofer
08:30 | FEM Modelling of piezo- and thermo-mechanical interaction in GaN power devices – the twofold impact of metallization layers ( abstract ) |
08:40 | Reliability of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si Substrate ( abstract ) |
08:50 | Device reliability of Geiger-mode Single Photon Avalanche Diode ( abstract ) |
09:00 | Photon Emission of MOSFET with Parasitic Bipolar Operation ( abstract ) |
09:10 | Improvement of Failure Analysis equipments by incorporating signal/image processing tools ( abstract ) |
09:20 | Investigating Stress Measurement Capabilities of GHz Scanning Acoustic Microscopy for 3D Failure Analysis ( abstract ) |
09:30 | Impurities in electroplated Cu and void formation in Cu-Sn micro-connects ( abstract ) |
09:30-10:50 Session 13: EUFANET/CAM-Workshop "Automotive Electronics Systems Reliability" (Part 1)
Chair:
Location: Einstein
09:30 | The southeast automotive hub and Georgia Tech’s automotive electronics ecosystem ( abstract ) |
10:10 | 77Ghz Automotive RADAR in eWLB package: from consumer to automotive packaging ( abstract ) |
10:30 | Reliability of automotive LED systems ( abstract ) |
09:50-10:50 Session 14: Reliability and Failure Mechanisms of special photonics and LED Devices: LED systems
Chairs:
Location: Fraunhofer
09:50 | LED Degradation: from component to system (invited) ( abstract ) |
10:30 | Transient thermal analysis for accelerated reliability testing of LEDs ( abstract ) |
11:10-13:50 Session 15: Panel Discussion + Keynote 3
Chair:
Location: Einstein
11:10 | Power and industry electronics – future perspectives for Europe ( abstract ) |
11:50 | Reliability - becoming the key factor for electronics in Europe? (Panel Discussion) ( abstract ) |
14:50-15:30 Session 16A: Semiconductor Reliability & Failure Mechanisms: BTI
Chairs:
Location: Planck
14:50 | Degradation and Recovery of variability due to BTI ( abstract ) |
15:10 | Early Detection and Prediction of HKMG SRAM HTOL Performance by WLR PBTI Tests ( abstract ) |
14:50-16:30 Session 16B: EUFANET/CAM-Workshop "Automotive Electronics Systems Reliability" (Part 2)
Chair:
Location: Einstein
14:50 | Automotive Memory Trends and System Reliability Concepts ( abstract ) |
15:30 | Powertrain electronics reliability ( abstract ) |
15:50 | Requirements for Reliability and new Solutions for Transmission Control Units ( abstract ) |
16:10 | Cu-wire Bond Reliability in Automotive Electronics ( abstract ) |
14:50-16:30 Session 16C: Reliability and Failure Mechanisms of special photonics and LED Devices: LED; laser diodes and VCSELs
Chairs:
Location: Fraunhofer
14:50 | Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs ( abstract ) |
15:10 | Degradation of InGaN-based LEDs related to charge diffusion and build-up ( abstract ) |
15:30 | ESD tests on 850 nm GaAs-based VCSELs ( abstract ) |
15:50 | Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes ( abstract ) |
16:10 | Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes ( abstract ) |
15:30-16:30 Session 17: Exhibitor Workshop: Reliability Testing and Failure Analysis
Chair:
Location: Planck
15:30 | Reliability Testing ( abstract ) |
15:40 | Fault Isolation at 5um Resolution using Electro-Optical TDR with 6ps Rise Time ( abstract ) |
15:50 | Use of Lock-in Thermography and Magnetic Current Imaging as complemetary techniques for localization of shorts in GaN transistors ( abstract ) |
16:00 | Scribing, Scribless and Cleaving Reinvented ( abstract ) |
16:10 | Solutions for semiconductor failure analysis with SEM ( abstract ) |
16:20 | Exhibitor Workshop: Reliability Testing - talk 3 ( abstract ) |
16:50-18:30 Session 18A: Semiconductor Reliability & Failure Mechanisms: Miscellaneous
Chairs:
Location: Planck
16:50 | Plasma Process Induced Damage Detection by Fast Wafer Level Reliability Monitoring for Automotive Applications ( abstract ) |
17:10 | Channel width dependence of AC stress on bulk nMOSFETs ( abstract ) |
17:30 | Effects of voltage stress on the single event upset (SEU) response of 65 nm flip flop ( abstract ) |
17:50 | Conductive filament formation at grain boundary locations in polycrystalline HfO2 based MIM stacks- Computational and Physical Insight ( abstract ) |
18:10 | Microcontroller susceptibility variations to EFT burst during accelerated aging ( abstract ) |
16:50-18:30 Session 18B: EUFANET/CAM-Workshop "Automotive Electronics Systems Reliability" (Part 3)
Chair:
Location: Einstein
16:50 | Si IGBT reliability for HVs ( abstract ) |
17:10 | Power modules in automotive powertrains: qualification and test ( abstract ) |
17:30 | Reliability of inverters and DC Link capacitors for e-mobility ( abstract ) |
17:50 | Estimation of IGBT power module reliability in pre-design phase ( abstract ) |
18:10 | Safe cell, safe battery? Battery fire investigations using FMEA, FTA and practical experiments ( abstract ) |
16:50-18:30 Session 18C: Progress in Failure Analysis Methods: Novel non-destructive testing
Chair:
Location: Fraunhofer
16:50 | Copper Through Silicon Vias Studied by Photoelastic Scanning Infrared Microscopy ( abstract ) |
17:10 | Investigating Stress Measurement Capabilities of GHz Scanning Acoustic Microscopy for 3D Failure Analysis ( abstract ) |
17:30 | Detection and Analysis of Stress-induced Voiding in Al-Power lines by Acoustic GHz-Microscopy ( abstract ) |
17:50 | Magnetic Field and Current Density Imaging using off-line Lock-In Analysis ( abstract ) |
18:10 | Detection of cracks in multilayer ceramic capacitors by X-ray imaging ( abstract ) |
Thursday, September 22nd
View this program: with abstractssession overviewtalk overview
08:30-10:50 Session 19A: Reliability & Failure Mechanisms of MEMS and sensors
Chairs:
Location: Planck
08:30 | Application of high frequency scanning acoustic microscopy for the failure analysis and reliability assessment of MEMS sensors (invited) ( abstract ) |
09:10 | Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness ( abstract ) |
09:30 | Effects of residual stresses on cracking and delamination risks of an avionics MEMS pressure sensor ( abstract ) |
09:50 | A novel correlative model of failure mechanisms for evaluating MEMS devices reliability ( abstract ) |
10:10 | Optimization of contact metallizations for reliable wafer level Au-Sn bonds ( abstract ) |
08:30-09:30 Session 19B: Reliability & Failure Mechanisms in Packages and Assembly: Tutorial
Chairs:
Location: Einstein
08:30 | Tutorial: Creeping corrosion of copper on printed circuit board assemblies ( abstract ) |
08:30-09:30 Session 19C: Reliability & Failure Mechanisms of Wide Bandgap Devices: Tutorial
Chairs:
Location: Fraunhofer
08:30 | Field- and time dependent degradation of GaN HEMTs ( abstract ) |
09:30-10:50 Session 20A: Reliability & Failure Mechanisms in Packages and Assembly: Moisture and corrosion related studies
Chairs:
Location: Einstein
09:30 | Effects of salt spray test on lead-free solder alloy ( abstract ) |
09:50 | Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions ( abstract ) |
10:10 | Moisture absorption by molding compounds under extreme conditions: impact on accelerated reliability tests ( abstract ) |
10:30 | Effect of PCBA surface morphology and chemistry on water layer formation under humid conditions and corrosion reliability ( abstract ) |
09:30-10:50 Session 20B: Reliability & Failure Mechanisms of Wide Bandgap Devices: Microwave devices
Chairs:
Location: Fraunhofer
09:30 | GaN devices: millimeter wave applications challenges (invited) ( abstract ) |
10:10 | Continuous Time-Domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs ( abstract ) |
10:30 | Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures ( abstract ) |
11:10-12:50 Session 21A: Quality and Reliability Assessment – General Techniques and Methods for Devices and Systems: Miscellaneous
Chairs:
Location: Planck
11:10 | Early life field failures in modern automotive electronics – An overview, root causes and precautions ( abstract ) |
11:30 | Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors ( abstract ) |
11:50 | Impact on Non-linear Capacitances on Transient Waveforms during System Level ESD Stress ( abstract ) |
12:10 | Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests ( abstract ) |
12:30 | Temperature rise measurement for power-loss comparison of an aluminium electrolytic capacitor between sinusoidal and square current injections ( abstract ) |
11:10-12:50 Session 21B: Reliability & Failure Mechanisms in Packages and Assembly: Reliability and Modelling
Chairs:
Location: Einstein
11:10 | Reliability Evaluation of Donut-Tungsten-Via as an Element of the Highly Robust Metallization ( abstract ) |
11:30 | Reliability Evaluation of Si-Dies due to Assembly Issues ( abstract ) |
11:50 | Fatigue testing method for fine bond wires in an LQFP Package ( abstract ) |
12:10 | Fast and Trusted Intrinsic Stress Measurement to Facilitate Improved Reliability Assessments ( abstract ) |
12:30 | Delamination of polyimide/Cu films under mixed mode loading ( abstract ) |
11:10-12:50 Session 21C: Reliability & Failure Mechanisms of Wide Bandgap Devices: GaN power devices and deep level transient spectroscopy
Chairs:
Location: Fraunhofer
11:10 | Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis ( abstract ) |
11:30 | UIS test of high-voltage GaN-HEMTs with p-type gate structure ( abstract ) |
11:50 | Temperature Dependent Dynamic ON State Resistance in GaN on Si Based Normally OFF HFETs ( abstract ) |
12:10 | Experimental study of the short-circuit robustness of 600V E-mode GaN transistors ( abstract ) |
12:30 | Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy ( abstract ) |
12:50-13:50 Session 22: Poster Session for Tracks A / C / F / H
Chair:
Location: Foyer 1. Floor
12:50 | Power cycle reliability of Cu nanoparticle joint dependent on a mismatch of coefficients of thermal expansion ( abstract ) |
12:50 | Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors ( abstract ) |
12:50 | Device instability of amorphous InGaZnO thin film transistors with transparent source and drain ( abstract ) |
12:50 | Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain ( abstract ) |
12:50 | Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode ( abstract ) |
12:50 | On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FDSOI technology ( abstract ) |
12:50 | Instability of oxide thin film transistor under electrical-mechanical hybrid stress for foldable display ( abstract ) |
12:50 | FESeR: a data-driven framework to enhance sensor reliability for the system condition monitoring ( abstract ) |
12:50 | An in depth analysis of pull-up capacitance-voltage characteristic for dielectric charging assessment of MEMS capacitive switches ( abstract ) |
12:50 | Role of Two-Dimensional Electron Gas (2DEG) in AlGaN/GaN High Electron Mobility Transistor (HEMT) ON-State Degradation ( abstract ) |
12:50 | Structural disturbances in GaN HEMT layers as source of leakage current, influencing device performance and reliability ( abstract ) |
12:50 | Component Reliability Importance assessment on complex systems using Credible Improvement Potential ( abstract ) |
12:50 | Fatigue Life Prediction Model for Accelerated Testing of Electronic Components under Non-Gaussian Random Vibration Excitations ( abstract ) |
12:50 | DRES: Data recovery for condition monitoring to enhance system reliability ( abstract ) |
12:50 | The radiation test based assessment of process quality and reliability for conventional 65-nm CMOS technology ( abstract ) |
12:50 | Chemical rate phenomenon approach applied to Lithium battery capacity fade estimation ( abstract ) |
12:50 | Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress ( abstract ) |
12:50 | Requirements for the Application of ECUs in E-mobility Originally Qualified for Gasoline Cars ( abstract ) |
15:10-15:40 Session 23: Closing Ceremony
Chair:
Location: Einstein
15:10 | Best Paper / Best Poster Awards - ESREF 2016 ( abstract ) |
15:30 | Advance Information on ESREF 2017 ( abstract ) |