This paper presents a study of HCI induced degradation as a function of temperature in 28NM FD-SOI technology. While reliability measurements are usually performed while keeping stress and measurement temperature the same, this work aims to decouple the impact of temperature on defect generation from the influence of temperature on the behavior of existing defects (sense effect). The study focuses primarily on mobility and threshold voltage degradation over a wide temperature range covering 4K up to 400K. The resulting models are then applied and discussed in the context of reliability modeling.