This paper presents hot-carrier injection measurements and model on 28nm FD-SOI transistors down to 4.2K. While the typical empirical models (e.g. Arrhenius law) reproduce well data obtained for temperatures higher than 220K, the cryogenic behavior could only be captured by more sophisticated approaches (i.e. the Lucky electron model). The impact of temperature on the creation of defects has been studied considering self-heating and degradation’s localization.