Wideband Push-Pull Class E Amplifier for RF Power Delivery

EasyChair Preprint 10549

Abstract

This paper presents the design and implementation of a 13.56 MHz push-pull Class E power amplifier with broadband capabilities. The Class E amplifier utilizes SiC MOSFETs with a custom current source resonant gate driver. Because the amplifier is a push-pull structure, we design and implement a balun that converts the differential output into a ground-referenced output. This work experimentally demonstrates the proposed amplifier delivering over 1 kW power to a 50 Ω load impedance.

Keyphrases: Broadband Power Amplifier, Class E power amplifier, high frequency and very high frequency, radio frequency power electronics, resonant gate drive

@booklet{EasyChair:10549,
  author    = {Zikang Tong and Juan Rivas},
  title     = {Wideband Push-Pull Class E Amplifier for RF Power Delivery},
  howpublished = {EasyChair Preprint 10549},
  year      = {EasyChair, 2023}}