1KW Amplifier Class D Design with GaN Switches

EasyChair Preprint 4646

Abstract

With recent advances in Gallium Nitride (GaN) semiconductor technology, it is possible to achieve greater applications in the power electronics market, allowing high switching speeds and high power conversion densities by transistors. This work presents application of GaN transistors in the development of class D audio amplifier of 1KWrms in order to observe efficiency and losses generated in the switches, using complete bridge topology with unipolar modulation and proportional control integrative derivative (PID) digital. It obtains 97% yield on the amplifier and Total Harmonic Distortion (THD) of 0.23% through GaN transistor simulations and circuit simulation, in the prototype 97.7% of yield at maximum power are obtained.

Keyphrases: Class D Amplifier, GaN FET, GaN Transistor Losses, hardware simulation

@booklet{EasyChair:4646,
  author    = {Allyfrahy Nunes Alves and Paulo Peixoto Praça and Demercil de Sousa Oliveira Jr. and Luiz Henrique Silva Colado Barreto},
  title     = {1KW Amplifier Class D Design with GaN Switches},
  howpublished = {EasyChair Preprint 4646},
  year      = {EasyChair, 2020}}