Ion implanter and Activation Annealing for SiC devices

EasyChair Preprint no. 533

Abstract

Ion implanter process for SiC devices needs much longer time compared with Si process. Therefore implantation process optimization is important to reduce cost. In this paper, implantation temperature that affects process time is discussed. And activation conditions after implantation is also discussed.

Keyphrases: Activation annealing, Aluminium ion/, Hi temperature implantation/, Room temperature implantation/

@Booklet{EasyChair:533,
  author = {Yoshifumi Yamazaki and Thomas Simon and Takumi Yuze and Hideo Suzuki and Yukihiro Furukawa and Hidekazu Yokoo},
  title = {Ion implanter and Activation Annealing for SiC devices},
  howpublished = {EasyChair Preprint no. 533},
  doi = {10.29007/27zm},
  year = {EasyChair, 2018}}