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Author:Michael Waltl

Publications
A Single-Trap Study of PBTI in SiON nMOS Transistors
Michael Waltl, Bernhard Stampfer, Gerhard Rzepa, Ben Kaczer and Tibor Grasser
EasyChair Preprint 4312

Keyphrases

BTI, charge trapping, Electron trap, hole trap, NMOS, planar n channel mosfet, Single-defects, Trap level, trap position.

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