TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
( | |
(cross-sectional nanoprobing) | |
(electrical failure analysis) | |
(fault isolation) | |
(nanoprobing) | |
- | |
- automotive electronics failures on system level | |
- automotive electronics reliability | |
- early life automotive electronics failures | |
2 | |
28nm UTBB FD-SOI | |
2DEG | |
3 | |
3D integration | |
3D-Integration | |
4 | |
4H-SiC | |
6 | |
65 nm | |
A | |
abalanche breakdown | |
AC stress | |
accelerated aging | |
Accelerated Life Test | |
acceleration modelling | |
Acid decapsulation | |
Acoustic Microscopy | |
activation energy | |
AEC-Q006 | |
AFM-based nanoprober | |
aging | |
Aging Law | |
Aging tests | |
Al Power metal lines | |
AlGaN/GaN | |
AlGaN/GaN High Electron Mobility Transistor (HEMT) | |
Aluminium Graphite | |
Aluminum | |
anomaly detection | |
Arrhenius law | |
Assembly | |
Assessment method | |
Atmospheric radiation | |
Atom probe tomography | |
AuSn 8020 | |
AuSn interconnection | |
Autoclave | |
Autocorrelation | |
Automatization | |
Avalanche | |
B | |
Bending test | |
BEOL | |
bias stress | |
Binary collision approximation | |
board level reliability | |
Body diode | |
body effect | |
Bodybias | |
Bond wire | |
bond-pad | |
Breakdown voltage | |
breakdown voltage drift | |
Brittle and ductile failure | |
BTI | |
Buffer layer | |
Bulk CMOS | |
C | |
CAD navigation | |
CAFM | |
Calendar ageing | |
Cantilever | |
capability of heat dissipation | |
capacitor | |
catastrophic damage | |
Cathodoluminescence | |
charge injection | |
Charged Coupled Devices | |
charged particle beam | |
charging-discharging | |
Chemical Over-etched on Bond-pad issue | |
Clustering model | |
CMOS 6T SRAM | |
Cohesive Zone Model | |
Collected Charge | |
Computational Modeling | |
condition monitoring | |
conductive anodic filament | |
Conductive filament | |
constant stress accelerated degradation testing | |
copper corrosion | |
correlative model | |
corrosion | |
Cosmic rays | |
crack guidance | |
cracking risk | |
Credible Improvement Potential | |
creeping corrosion | |
critical charge | |
Critical degradation voltage | |
Critical energy | |
critical sensor application | |
cross section curve | |
Cross-section | |
CTE adjustment | |
Cu nanoparticle joint | |
current density distribution | |
current filament | |
current imaging | |
current sensor | |
Custom I/O ring | |
D | |
damp heat | |
Dark line defect (DLD) | |
data recovery | |
DC-link capacitors | |
decay path | |
decay rate | |
Defect | |
Defect density | |
degradation | |
Delamination | |
design for higher robustness | |
design for reliability | |
design recommendations | |
Destructive | |
device degradation | |
device instability | |
Device Reliability | |
device under test | |
Diagnosis tools | |
DIC | |
Die strength testing | |
Dielectric charging | |
Diffusion | |
Digital combinational circuit | |
Diode | |
Direct liquid cooled | |
Dislocations | |
Dispersal | |
DLTS | |
Donut Via | |
Double SOI | |
dynamic mechanical stress test | |
E | |
e-mobility | |
e-mode | |
ebic | |
EDA | |
EDA tools | |
EDS | |
Electrical and Physical Failure Analysis | |
electrical fast transient | |
Electrical properties | |
Electro Optical Probing | |
electrolytic capacitors | |
ElectroMagnetic Interference | |
Electromagnetic susceptibility | |
Elemental Characterization | |
end of life Weibull statistics | |
end-of-life criterium | |
endurance | |
Energy release rate | |
Energy storage systems | |
ESD | |
ESD Network | |
ESD protection strategy | |
eWLB | |
F | |
Failure | |
Failure Analysis | |
Failure Inspection | |
failure mechanism | |
Failure Mechanisms | |
Failure rate | |
Failure-Characterization | |
falsh memory | |
Fast recovery Diode | |
FDSOI | |
FEA | |
FEM simulations | |
FIB | |
FIB-SEM | |
FIB/SEM/TEM | |
Finite Element Method | |
finite element simulation | |
Fishbone pattern | |
Flash | |
Flex crack | |
flexible a-Si:H/μc-Si:H PV | |
flip flop | |
Focused ion beam | |
foldable device | |
Forward body bias | |
forward gate bias overstress | |
FPGA | |
Fracture mechanics | |
Fracture mechanism | |
Fracture Strength estimation | |
Full-frame CCD | |
Fully Depleted SOI | |
G | |
Ga contamination | |
Gallium Nitride | |
Gallium Nitride (GaN) | |
Gamma | |
GaN | |
GaN HEMT | |
GaN HEMTs | |
GaN-HEMT | |
Gate Electrode Workfunction Engineered (GEWE) | |
gate oxide | |
gate workfunction | |
gerneric model | |
GHz SAM | |
Grain boundary | |
Graphite | |
H | |
H/Ar treatment | |
handling | |
Hardness | |
HAST | |
HCI | |
healing phases | |
heat pipe | |
Heatsink | |
Heavy-Ion Impact | |
HEMT | |
heterostructure | |
HFETs | |
HfO2 | |
HfO2 dielectric | |
high frequency layer | |
High luminosity blue LEDs | |
High power device | |
High power laser diode | |
high temperature | |
high temperature and current | |
High temperature applications | |
High Temperature Operation Life (HTOL) | |
High Temperature Reverse Bias | |
High Temperature Reverse Bias test | |
high voltage | |
high-k dielectric | |
High-κ Metal Gate (HKMG) | |
HKMG | |
hot carrier | |
hot carrier degradation | |
hot-carrier | |
Hot-carrier degradation | |
Hybrid and Electric Vehicles | |
hydrostatic load | |
I | |
IC reliability | |
IGBT | |
IGBT Aging | |
IGBT Module | |
III-V semiconductor | |
Impact ionization | |
implantation | |
Infrared microscopy | |
InGaN | |
InGaZnO thin film transistor | |
InGaZnO thin film transistor reliability | |
instability | |
Insulated Gate Bipolar Transistor | |
Integrated Circuit Failure Analysis | |
integrated power switch | |
interconnect reliability | |
Intermetallics | |
invisible defect | |
J | |
JBS Diode | |
Junction Temperature estimation | |
K | |
Kernel Principle Component Analysis | |
L | |
Laser | |
Laser deprocessing | |
Laser Deprocessing Technique | |
Laser diode | |
Laser Modulation | |
lead-free solder | |
leakage | |
Leakage current | |
Leakage current measurement | |
LED | |
LED module | |
Life Prediction | |
life-time | |
Lifetime | |
lifetime modelling | |
Light emitting diode | |
light-emitting diode | |
Linear Energy Transfer | |
Lithium batteries | |
local deep level transient spectroscopy | |
Lock-In Analysis | |
Lock-in-thermography | |
Long-term experiment | |
LUT | |
M | |
magnetic current imaging | |
Magnetic Flip-Flop | |
magnetoresistive sensors | |
Majority voters | |
MCI | |
mechanical fatigue testing | |
Mechanical reliability | |
mechanism | |
Memory Cell | |
MEMS | |
MEMS inertial sensors | |
MEMS sensor | |
metalization systems | |
Metallization degradation | |
microclimate | |
microcontroller | |
Mismatch of coefficients of thermal expansion | |
Mission profile | |
modeling | |
Modelling | |
Moisture | |
Molding compounds | |
Molecular dynamics | |
Monitoring | |
MOS transistor | |
MOSFET | |
Multilayer ceramic capacitor | |
multiple stress conditions | |
multivariable linear regression | |
mutual information | |
N | |
Na fault injection | |
Nano Filament | |
Nano-Crystalline Diamond | |
nano-probing | |
Nano-wire | |
nanoprobing | |
nanowire | |
NBED | |
NBTI | |
NBTI model | |
NDT | |
negative bias illumination stress | |
neutral trap | |
nickel palladium | |
nMOSFETs | |
non-destructive analysis | |
Non-Gaussian | |
Normally-off | |
Numerical Simulation | |
NVM array reliability | |
O | |
ON-state | |
On-state resistance computation | |
Open circuit | |
Optical power | |
Oscillations | |
Oxide based RRAM | |
Oxide Electrifc Field | |
oxide thin film transistor | |
OxRAM | |
P | |
p-GaN | |
p-GaN gate | |
package board interaction | |
Passive thermal cycling | |
PCB embedded | |
PCBA | |
PEDOT:PSS | |
Percolation | |
performance | |
Permanent Faults | |
Phosphorus | |
PID | |
Plasma charging | |
PMOS | |
Polyimide | |
polymer | |
Positive Bias Temperature Instability (PBTI) | |
Potential induced degradation | |
power converter | |
Power cycle | |
power cycling | |
Power cycling test | |
power density | |
power device | |
Power Diode | |
power electric converters | |
power electronics | |
power loss | |
power module | |
Power modules assembly | |
Power MOSFET | |
Power semiconductor module | |
power semiconductor reliability | |
Pressure Packaging | |
printed circuit board assembly | |
Prited circuit board | |
Probabilistic transfer matrix | |
process assessment | |
Process variation resilient | |
Propagation delay | |
Proton induced single event upset | |
pull test | |
pulsed laser | |
PV modules | |
Q | |
qualification | |
Quantum Subconductance | |
quantum well | |
R | |
Radiation | |
radiation effect | |
Radiation effects | |
Rayleigh wave | |
Read Disturb | |
RECOVERY | |
Reistive paths | |
Reliability | |
reliability analysis | |
reliability evaluation | |
Reliability evaluation efficiency | |
Reliability Importance | |
reliability of electronics | |
Reliability-aware simulation | |
Repetition | |
ReRAM | |
Residual stress | |
Resilience | |
Resistive switching | |
Resitive RAM | |
retentation | |
reverse-bias stress | |
RF LDMOS | |
RF MEMS capacitive switches | |
Ring Oscillator | |
Ring oscillators | |
Ringoscillator | |
Robustness | |
Rogowski coil | |
RRAM | |
Ruggedness | |
S | |
salt spray test | |
SAM | |
Scanning acoustic microscopy | |
Scanning Infrared Stress Explorer | |
Scanning Microwave Microscopy | |
scanning nonlinear dielectric microscopy | |
Schottky Diode | |
second bond | |
second level reliability | |
semiconductor | |
sensor selection | |
SET | |
SET Cartography | |
SEU | |
SEU mapping | |
Severe aging cycles | |
Short circuit | |
short-circuit | |
shrinkage | |
SiC | |
SiC MOSFET | |
SiC power module | |
SiC Schottky diode | |
Silicon | |
silicon and oxide corrosion | |
Silicon Carbide | |
Silicon Nanowire (SiNW) | |
silver corrosion | |
silver sinter | |
Simulation | |
Single Event Transient | |
Single Event Transients | |
single event upset | |
Single-Event Transients | |
Single-Event Upsets | |
SiO2/SiC interface | |
SMM | |
solar cells | |
Solder cracking | |
solder fatigue | |
Solder joint | |
solder joint reliability | |
Solid-liquid interdiffusion (SLID) bonding | |
Space Proton Flux | |
spectral analysis | |
SRAM | |
SRAM FPGA | |
SRIM | |
Stacked Gate | |
STANDARD DEVIATIONS | |
static mechanical stress | |
STEM | |
Step stress | |
step-down stress accelerated degradation testing | |
step-up stress accelerated degradation testing | |
stitch peel | |
stitch pull | |
Strain | |
stress measurement | |
Stress-induced Birefringence | |
STT-MTJ | |
stuck-at failure modes | |
surface morphology | |
switching | |
system level ESD | |
system reliability | |
T | |
T-Cad device simulation | |
TCAD | |
TCOB | |
TED | |
Telluric radiation | |
TEM | |
temperatur cycling on board | |
Temperature Compensation Point (TCP) | |
Tensile properties | |
Test bench | |
Thermal accelerated tests | |
Thermal conductivity | |
Thermal Laser Stimulation | |
Thermal resistance | |
Thermal runaway | |
thermal simulation | |
thermal stress | |
thermal transient procedure | |
Thermo-mechanical fatigue | |
thermo-mechanical finite element analysis | |
Thermo-mechanical stress | |
threshold voltage | |
Threshold voltage drop | |
Through Silicon Vias | |
TID | |
TID test | |
time dependent breakdown | |
time-domain waveform measurement | |
Time-Frequency Acquisition | |
Tip | |
Total ionizing dose | |
Transconductance | |
Transient simulation | |
Transient thermal analysis | |
transparent source and drain | |
Traps | |
TRIDYN | |
TRIM | |
TSD | |
TSV | |
TSVs | |
U | |
UIS | |
UIS test | |
Ultra-short gate length | |
V | |
Variability | |
Vccmin | |
VCE(T)-method | |
VCSEL | |
Verification tool | |
Vibration Fatigue | |
VLSI devices | |
Voids | |
voltage stress | |
VTH DISTRIBUTIONS | |
W | |
Wafer level bonding | |
wafer level packaging | |
water film | |
Wavelets Transform | |
wide band-gap semiconductor | |
wide bandgap | |
width dependence | |
wire bond fatigue | |
WLR | |
X | |
X-Ray | |
XFEM | |
XSEM | |
Y | |
Yield enhancement | |
Z | |
ZnO:B TCO thin film |