Hot carrier injection (HCI) is one of the more significant reliability issues in advanced CMOS technologies. If it is more and more critical in thin gate-oxides due to gate-length scaling although supply voltage is reduced, it is more problematic in thicker gate-oxide due to high voltages operation needed for input/output (I/O) devices. In this paper, we discuss important process steps from the fabrication line that may modulate HCI damage in thick gate-oxides MOSFETs dedicated to analog operation.